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1
Guillaumond, Jean-Frédéric. "Étude de la résistivité et de l'électromigration dans les interconnexions destinées aux technologies des noeuds 90 nm - 32 nm." Université Joseph Fourier (Grenoble), 2005. http://www.theses.fr/2005GRE10246.
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La résistivité et la fiabilité du cuivre dans les interconnexions des circuits intégrés pour les générations 90 nm – 32 nm ont été étudiées. Le contexte, la réalisation des interconnexions et les outils de caractérisations utilisés sont présentés dans une première partie. Dans une seconde partie, l'augmentation de résistivité observée en diminuant la largeur des lignes de cuivre est décrite à l'aide du modèle de Mayadas. Ce phénomène est dû à la diffusion des électrons sur les défauts du cristal (joints de grains, parois extérieures, impuretés). La résistivité des lignes de dimensions décananométriques, mesurée à l'aide d'une méthode électrique, confirme que cette augmentation est en accord avec la modélisation retenue. Dans une dernière partie, l'électromigration du cuivre qui est un déplacement de matière sous l'effet d'un flux d'électrons, a été évaluée. L'impact de l'utilisation de nouveaux matériaux (diélectrique poreux, barrière de diffusion CVD TiN et ALD TaN, alliage de cuivre-aluminium, barrières supérieures métalliques) a été estimé. De nouvelles caractérisations physiques (expériences d'électromigration in situ sous MEB et analyse de texture par EBSD) ont été développées pour corréler localement la structure cristalline du métal et les mécanismes de cavitation par électromigration. Les résultats majeurs ont montré l'importance du confinement du cuivre pour améliorer les durées de vie ainsi que les risques associés à la réduction des épaisseurs de barrière. Les résultats expérimentaux les plus prometteurs ont été obtenus avec les barrières métalliques où les caractéristiques d'électromigration semblent proches de celles attendues pour un matériau massifThe resistivity and reliability of copper in interconnections of the integrated circuits for the 90 nm - 32 nm nodes were studied. The context, the processing of the interconnections and the characterisation tools used are presented in a first part. In a second part, the resistivity increase observed by decreasing the copper line width is described with the model of Mayadas. This phenomenon is due to the diffusion of electrons on the crystal defects (grain boundary, external walls, impurities). The resistivity of decananometric size lines, measured using an electrical method, confirms that the resistivity increase is in agreement with the selected model. On the other hand, we showed that such measurements did not allow to separate the contribution of the various mechanisms responsible for this increase. In the last part, the copper electromigration, which is a material displacement under the effect of a wind of electrons, was evaluated electrically. The impact of using new materials (porous dielectric, CVD TiN and ALD TaN diffusion barrier, copper-aluminium alloy, top metallic barriers) and of the reduction of line widths on this phenomenon was estimated. New physical characterisations (in situ SEM electromigration experiment and EBSD texture analysis) were developed and aimed to correlate the local copper microstructure with voiding mechanisms. The main results showed the great importance of mechanical confinement on the lifetime and the risk of using thin diffusion barriers. The most promising results were obtained with the metallic barriers where electromigration properties are close to those expected with bulk material
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Kechichian, Ardem. "Impact de l'environnement du diélectrique sur les performances du transistor pour les noeuds technologiques de 32 nm à 14 nm." Paris 6, 2013. http://www.theses.fr/2013PA066748.
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Dans le cadre de la stratégie More Moore, la réduction de la taille des transistors MOS à effet de champs en deçà de 32nm requiert l’utilisation d’un diélectrique à forte permittivité (high-k) et l’emploi d’une grille métallique. Or, cette architecture présente une instabilité intrinsèque qui décale la tension de seuil du transistor. Cette instabilité est expliquée par plusieurs modèles, mais toutes accordent un rôle important à la diffusion de l’oxygène. Le modèle le plus consensuel est celui du Fermi Level Pinning, qui explique le décalage de tension de seuil par la création d’un dipôle à l’interface high-k/métal après activation thermique. Ce travail s’intéresse à la diffusion de l‘oxygène dans l’empilement TiN/HfO2/SiO2/Si, pressenti pour la génération de transistor 14 nm. L’analyse par caractérisation XPS de cet empilement montre que lors de recuits à une température supérieure à 450°C, une oxydation du substrat est observée de manière concomitante avec une réduction du titane +IV en titane +III. Le métal catalyse cette réaction, et permet la diffusion d’oxygène de la surface jusqu’au substrat. Le système est analogue à une pile à combustible. Cette oxydation se produit en moins de dix secondes, puis est limitée par la diffusion de l’oxygène à travers le SiO2. Deux dipôles opposés et d’intensité croissante avec la température de recuit apparaissent aux interfaces Si/SiO2 et HfO2/TiN. Conformément au modèle Fermi Level Pinning, le second dipôle est prépondérant, et orienté avec des charges positives dans le high-k. Enfin, les analyses impédancemétrique et électrique confirment ces résultatsFor the sub-32 nm CMOS technological nodes, the implementation of a high dielectric constant oxide and a metal gate has been necessary. However, this architecture has an intrinsic instability that shifts the threshold voltage after a thermal activation. In the literature, this phenomenon is explained by a few models that are all oxygen diffusion-based. One school of thought called Fermi Level Pinning creates a consensus, and justifies the threshold voltage shift with the creation of a dipole at the high-k/metal interface during an annealing. This work focuses on the oxygen diffusion in the 14 nm technological node-oriented stack TiN/HfO2/SiO2/Si. The XPS characterizations of this stack after annealing show that above 450°C, the substrate oxidizes along with the reduction of the Ti+IV into Ti+III. The TiN acts as a catalyst of this reaction, and allows the diffusion of oxygen from the top of the stacks to the substrate. The system is equivalent to a Solid Oxide Fuel Cell. This oxidation happens in less than 10 seconds, and is then limited by the diffusion of the oxygen through the SiO2 layer. Two opposite dipoles result at the Si/SiO2 and HfO2/TiN interfaces, with their intensity increasing with the annealing temperature. In accordance with the Fermi Level Pinning model, the second dipole is preponderant, and oriented with its positive charges in the high-k. Finally, electrical characterizations and impedance spectroscopy confirm these results
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Ben, Akkez Imed. "Etudes théorique et expérimentale des performances des dispositifs FD SOI sub 32 nm." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENT081/document.
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> Ce manuscrit présente une étude théorique et expérimentale effectuée sur des transistors MOSFET d’une> technologie avancée de type FD SOI (complètement déserté silicium sur isolant). Des mesures électriques> combinées avec des modélisations ont été effectuées dans le but d’apporter des explications sur des phénomènes> liés à réductions des dimensions des transistors. Ce travail de thèse donne une réponse partielle de l’impact de ces> aspects sur les paramètres électrique ainsi que les paramètres de transport."This manuscript presents a theoretical and experimental study carried out on advanced technology the FD SOI MOSFETs (Fully Depleted Silicon On Insulator MOSFET’s). Electrical measurements combined with modeling were performed with an aim of bringing explanations of phenomena related to the dimension reduction in these structures. This work gives an answer of the impact of these aspects on the electrical parameters and on the carriers transport in the channel
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Leu, Jonathan Chung. "A 9GHz injection locked loop optical clock receiver in 32-nm CMOS." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/62443.
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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.Cataloged from PDF version of thesis.
Includes bibliographical references (p. 65-68).
The bottleneck of multi-core processors performance will be the I/O, for both on-chip core-to-core I/0, and off-chip core-to-memory. Integrated silicon photonics can potentially provide high-bandwidth low-power signal and clock distribution for multicore processors, by exploiting wavelength-division multiplexing. This thesis presents the technology environment of the monolithic optical/electrical chip, and then focuses on how an optical method would look like for both source-synchronous link and for on-chip global clock distribution. The injection-locked loop clock receiver that suits this architecture breaks the bandwidth/sensitivity tradeoff, and a self-adjusting mechanism is added to increase robustness. The simulated receiver sensitivity is - 14dBm at 9GHz, consuming 77.14pW and generating jitter within 0. 15ps when locked onto a mode-locked laser clock source. The chip infrastructure and testing procedures are then presented, and lastly a truly integrated optical-electrical design flow is shown as well.
by Jonathan Chung Leu.
S.M.
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Ben, akkez Imed. "Etudes théorique et expérimentale des performances des dispositifs FD SOI sub 32 nm." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00870329.
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> Ce manuscrit présente une étude théorique et expérimentale effectuée sur des transistors MOSFET d'une> technologie avancée de type FD SOI (complètement déserté silicium sur isolant). Des mesures électriques> combinées avec des modélisations ont été effectuées dans le but d'apporter des explications sur des phénomènes> liés à réductions des dimensions des transistors. Ce travail de thèse donne une réponse partielle de l'impact de ces> aspects sur les paramètres électrique ainsi que les paramètres de transport."
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Hamioud, Karim. "Élaboration et caractérisation des interconnexions pour les nœuds technologiques CMOS 32 et 22 nm." Lyon, INSA, 2010. http://www.theses.fr/2010ISAL0011.
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Les performances globales des circuits intégrés doivent augmenter d’environ 20 % à chaque nouvelle génération technologique. Les interconnexions constituant ces circuits ces circuits doivent participer à l’augmentation de ces performances et plus particulièrement à la réduction du temps de propagation des signaux. L’utilisation de diélectrique poreux à très faible permittivité est nécessaire pour les générations sub-45 nm. Dans un premier temps, une feuille de route pour une filière BEOL 32 nm performante est proposée. Les développements de procédés élémentaires ont permis de démontrer la fonctionnalité d’un démonstrateur multi niveaux au minimum des règles de dessin de la technologie 32 nm. Dans un deuxième temps, l’utilisation d’une technologie mature 45 nm a permis l’étude de l’intégration des diélectriques poreux k = 2. 3 et k = 2. 2 qui sont respectivement les candidats potentiels pour les générations 32 et 22 nm. L’introduction de ces matériaux dans l’architecture d’intégration permet d’améliorer les performances des circuits mais la fiabilité diélectrique de ces matériaux se retrouve dégradée par rapport au matériau k = 2. 5 de référence. Ainsi, après avoir mis en évidence les différentes sources de dégradation de la fiabilité diélectrique, une réponse au critère de fiabilité a permis la définition d’un schéma d’architecture fiable. Ce schéma d’intégration fiabilisée et performante utilise une barrière métallique TaN/Ta robuste et l’ajout d’une couche diélectrique supplémentaire dans l’empilement technologique. Ce schéma d’architecture fiable et performant constitue une bonne base de départ pour les futures filières BEOL 32 et 22 nm[The overall performance of integrated circuits should grow by about 20% at each new technology node. The interconnects have to be involved in increasing the performance and specially the reduction of signal propagation. The use of porous ultra low-k dielectric is necessary for the Sub-45 nm generation. In a first step, a roadmap for the 32 nm BEOL is proposed. The elementary processes developments have demonstrated the functionality of a multi-level demonstrator at minimum design rules of 32 nm technology node. In second step, a mature 45 nm technology has enabled the integration study of porous dielectric k = 2. 3 and k = 2. 2 which are potential candidates, respectively, for the 32 and 22 nm technology nodes. The introduction of these materials in the BEOL architecture scheme improves circuit performance but the dielectric reliability is found damaged from the reference k = 2. 5 material. Consequently, after to have identified the different sources of the dielectric reliability degradation, a response to the reliability standard has allowed the definition of reliable architecture. This reliable architecture used a robust metal barrier TaN/Ta robust and an additional layer in the dielectric stack technology. This reliable and efficient architecture represents a good beginning for the future 32 and 22 nm BEOL technology nodes. ]
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Jouve, Amandine. "Limitations des résines à amplification chimique destinées à la réalisation du noeud technologique 32 nm." Grenoble INPG, 2006. http://www.theses.fr/2006INPG0147.
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Les performances d'une technique lithographique sont étroitement liées aux performances du procédé lithographique, et notamment aux performances des résines à amplification chimique. L'objet de ce travail est donc d'étudier certaines limitations de ces matériaux à adresser les critères requis par l'ITRS pour le nœud technologique 32 nm. Dans un premier temps nous avons montré que si les dernières formulations des résines photosensibles permettent effectivement d'imprimer des motifs de dimension proche de 32 nm, d'autres paramètres (sensibilité, rugosité, facteur de forme) ne sont toujours pas en adéquation avec les spécifications de l'ITRS. Nous avons particulièrement étudié l'effondrement des motifs de faible dimension, ainsi que l'évolution des performances du procédé lithographique des résines à amplification chimique en couche mince. L'ensemble de ces travaux a donc mis en évidence l'écart technologique croissant entre les spécifications de l'ITRS et les résultats expérimentaux, lorsque la dimension des motifs denses diminue, même après optimisationUthography techniques performances are closely related to lithographie process, thus to chemically amplified resists performances. The aim of this PhD work is to study sorne limitations of these materials toward the 32 nm node realization. Firstly we prove that last formulations of photosensitive resists are effectively able to print patterns with dimension dose to 32 nm, other parameters (sensitivity, roughness, aspect ratio) are far from ITRS specifications. We have particularly study the collapse of small sized patterns, so that the evolution of lithographie process performances of thin chemically amplified resist films. AIl these works show the increasing technological gap between ITRS specifications and experimental results, when pattern's dimension decrease, even after optimisation
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Quémerais, Thomas. "Conception et étude de la fiabilité des amplificateurs de puissance fonctionnant aux fréquences millimétriques en technologies CMOS avancées." Grenoble INPG, 2010. http://www.theses.fr/2010INPG0158.
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Avec l'émergence d'applications millimétriques telles que le radar automobile ou le WHDMI, la fiabilité est devenue un enjeu extrêmement important pour l'industrie. Dans un émetteur/récepteur radio, les problèmes de fiabilité concernent principalement les transistors MOS intégrés dans les amplificateurs de puissance, compte-tenu des niveaux relativement élevés des puissances. Ces composants sont susceptibles de se détériorer fortement par le phénomène de l'injection de porteurs chauds impactant lourdement les performances des amplificateurs. Ce travail de thèse concerne la conception et l'étude de la fiabilité des amplificateurs de puissance fonctionnant aux fréquences millimétriques en technologies CMOS avancées. Le mémoire est articulé autour de quatre chapitres. Les deux premiers chapitres concernent l'étude, la conception, la modélisation et la caractérisation des éléments actifs et passifs intégrés sur silicium et utilisés pour réaliser des amplificateurs de puissance aux fréquences millimétriques. Le troisième chapitre décrit les trois amplificateurs de puissance conçus et réalisés pour les tests de fiabilité. Enfin, le dernier chapitre propose une étude complète de la fiabilité de ces circuits jusqu'au calcul de leur temps de vieWith the emergence of millimeter-wave applications such as automotive radar or WHDMI, the reliability became a very important issue for the industry. In a radio transceiver, the main reliability problems concern the MOS transistors used in the power amplifiers, due to the high power level. These devices are subject to deterioration by the hot carrier phenomenon. This impacts heavily the power amplifiers performances. This thesis work concerns the design and the study of the reliability of millimeter-wave power amplifiers in advanced CMOS technologies. The manuscript is divided into four chapters. The two first one concern the study, the design, the modeling and the characterization of integrated active and passive elements on silicon and used into power amplifiers at millimeter wave frequencies. The third chapter describes the three power amplifiers designed and realized for reliability tests. The final chapter provides a comprehensive study of the reliability of these circuits to calculate their lifetime
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Babaud, Laurène. "Développement et optimisation d’un procédé de gravure grille polysilicium pour les nœuds technologiques 45 et 32 nm." Grenoble INPG, 2010. http://www.theses.fr/2010INPG0034.
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Dans la course à l'intégration, l'un des paramètres les plus critiques dans la fabrication des dispositifs et leur performance est la définition des grilles des transistors et en particulier le contrôle en dimension de ces grilles de transistors. Pour le nœud technologique 45nm, la variation totale de dimension devra être inférieure à 2. 8nm sur une tranche de 300mm. Cela comprend la variation intrapuce, intraplaque, plaque à plaque et lot à lot. Cette thèse porte sur l'étude des interactions plasma/matériaux lors d'un procédé industriel de gravure d'une grille polysilicium pour le nœud technologique 45nm. L'analyse dimensionnelle des motifs et la caractérisation chimique des surfaces exposées aux plasmas ont permis de caractériser et d'optimiser ce procédé de gravure. L'analyse des différents contributeurs de variabilité de la dimension critique des grilles, conjuguée à la compréhension approfondie des mécanismes de gravure par plasma, a permis de mettre en place des actions correctives afin de minimiser ces sources de variations. La gravure du polysilicium est contrôlée par la formation d'une couche fluorocarbonnée se formant en surface des flancs du polysilicium. La maitrise de cette couche passivante par les conditions du plasma (pression, puissance source débit de gaz. . . ) a permis de développer une boucle de régulation innovante afin d'optimiser le contrôle de la dispersion des CD d'un lot à un autre. La mise en place de ce genre de boucle faisant varier plusieurs paramètres de la gravure par plasma sera la clef pour le contrôle dimensionnel des futurs nœuds technologiques en microélectroniqueOne of the critical parameters in a system on chip manufacturing and performance is the dimension control of the transistor gate. For the 45 nm technology node, the total variation of this critical dimension must be below 2. 8 nm on 300mm diameter substrate. This PhD work studies the plasma/materials interaction for an industrial polysilicon gate etch process for the 45nm technology node. The dimensional analysis of the pattern combined with the understanding of the plasma etch mechanisms by chemical characterization of the surfaces exposed to the plasma enable us to characterize and optimize the etch process. Moreover, corrective actions were put in place in order to control variations sources. Notably, the formation of fluorocarbon passivation layer on the polysilicon sidewalls, controlled by the plasma conditions, allowed us to develop an innovation regulation loop correcting the CD dispersion from a lot to another. Such kind of loop using multiple plasma parameters would play a key role in the CD control of the next technologic node
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Baudot, Sylvain. "Elaboration et caractérisation des grilles métalliques pour les technologiesCMOS 32 / 28 nm à base de diélectrique haute permittivité." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENT122/document.
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Cette thèse porte sur l'élaboration et la caractérisation des grilles métalliques en TiN, aluminium et lanthane pour les technologies CMOS gate-first à base d'oxyde high-k HfSiON. L'effet de l'épaisseur et de la composition des dépôts métalliques a été caractérisé sur les paramètres de la technologie 32/28nm. Ces résultats ont été reliés à une variation de travail de sortie au vide du TiN, à des dipôles induits par l'Al et le La à l'interface HfSiON/SiON et à leur diminution aux petites épaisseurs de SiON (roll-off). Nous avons montré que l'aluminium déposé sous forme métallique dans le TiN cause une diminution de son travail de sortie, opposée au faible dipôle positif induit par l'Al. Nous avons évalué l'influence du roll-off pour ces différents métaux et mis en évidence pour la première fois sa forte dépendance avec l'épaisseur de lanthane déposée. Le développement de procédés de dépôt de TiN, Al, La a permis d'accroître les bénéfices de ces matériaux pour la technologie CMOS 32/28nmThis thesis is about the manufacturing and the characterization of TiN, aluminum and lanthanum metal gate for high-k based 32/28nm CMOS technologies. The effect of metal gate layer thickness and composition has been characterized on 32/28nm technology parameters. These results have been related to a change in the TiN vacuum work function, to Al- and La- induced dipoles at the HfSiON/SiON interface or their lowering on thin SiON (roll-off). We have shown that metallic aluminum introduced in the TiN metal gate causes a work function lowering, opposed to the weak Al-induced dipole. We have evaluated the roll-off influence for theses different metals. For the first time we report the strong roll-off dependence with the deposited lanthanum thickness. Newly developed TiN, Al, La deposition processes have brought benefits for the CMOS 32/28nm technology
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Vitiello, Julien. "Etude des matériaux diélectriques à très faible permittivité déposés par voie chimique en phase vapeur développés pour l'isolation des interconnexions cuivre des circuits intégrés pour les générations technologiques 45 nm et 32 nm." Lyon, INSA, 2006. http://theses.insa-lyon.fr/publication/2006ISAL0097/these.pdf.
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Les besoins en performance des générations sub-65 nm impliquent l'utilisation de films diélectriques à très faible permittivité relative dans les interconnexions. Avec l'introduction du cuivre, deux films diélectriques interviennent dans l'architecture : un isolant entre les lignes métalliques et une barrière diélectrique recouvrant le dessus de ces lignes. Pour la génération 45 nm, le film isolant interligne de très faible permittivité relative est obtenu en introduisant de la porosité dans une matrice SiOC. Ces films poreux sont un véritable saut technologique pour l'ensemble de la chaîne de réalisation des interconnexions. Les barrières diélectriques doivent aussi présenter une permittivité relative faible. Dans ce but, le film SiCN, utilisé pour la génération 65 nm, doit être remplacé par un matériau présentant les mêmes caractéristiques barrière mais une densité moindre pour satisfaire les besoins en performances électriques. Le film isolant interligne présenté dans cette étude est basé sur une approche non porogène, dite de restructuration. L’étude du procédé de dépôt et des caractéristiques du film a permis de mettre en évidence les phénomènes physiques à l’origine de la structure à gradient du film. Les propriétés mécaniques ont pu être déterminées par nanoindentation à partir d’une méthode de mesure sur multicouches. L’amélioration de la tenue mécanique de ce film poreux a été étudiée avec un traitement thermique assisté par rayonnement ultraviolet. Son efficacité dépend du temps d’exposition et de l’atmosphère dans la chambre de traitement. De plus, la cinétique de réticulation de la structure SiOC est liée à la densité du film. Enfin, la faisabilité de l’intégration de ce film a été démontrée. En ce qui concerne les barrières diélectriques, deux solutions pour la génération 45 nm ont été comparées : une barrière SiC stabilisée par plasma et une bicouche SiCN. L’efficacité en tant que barrière à la diffusion a été mesurée grâce à deux méthodes développées dans cette étude. Cela a permis de mettre en évidence les performances de ces nouvelles couchesThe performance requirements for sub-65 nm generations imply the use of dielectric films with ultra low k-value in interconnects. With the introduction of copper, two dielectric films play a major role in the architecture: an insulator in between the metal lines and a dielectric barrier capping the top of these lines. For the 45 nm node, ultra low k-value insulators are obtained by introducing porosity into a SiOC matrix. These porous films are a true technological jump for the whole interconnect module integration. The dielectric barriers must also have a low k-value. To this purpose, the SiCN film, used for the 65 nm generation, must be replaced by a material showing the same barrier properties but less dense to satisfy the requirements in electric performances. The ultra low k-value insulator is based on a non porogen approach, called restructuring. The study of the process of deposit and the characteristics of film allow highlighting the physical phenomena at the origin of the graded structure in depth of the film. The mechanical properties were determined by nanoindentation, using a method based on multilayers. The improvement of the mechanical resistance of this porous film was obtained using a thermally assisted ultraviolet treatment. Its effectiveness depends on exposure duration and purge gas in the chamber. Moreover, the kinetics of cross-linking in the SiOC structure is related to the film density. Lastly, the feasibility of the integration of this film was evidenced. With regard to the dielectric barriers, two solutions for the 45 nm generation were evaluated: a plasma stabilized SiC layer and a SiCN bilayer. Their barrier efficiency was evaluated thanks to two methods developed in this study. That made it possible to qualify the performances of these new layers
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Vitiello, Julien Barbier Daniel. "Etude des matériaux diélectriques à très faible permittivité déposés par voie chimique en phase vapeur développés pour l'isolation des interconnexions cuivre des circuits intégrés pour les générations technologiques 45 nm et 32 nm." Villeurbanne : Doc'INSA, 2007. http://docinsa.insa-lyon.fr/these/pont.php?id=vitiello.
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Tissandier, Fabien. "Caractérisation spatio-temporelle d'une chaîne laser à 32. 8 nm par plasma laser et perspectives vers une source ultrabrève et intense." Palaiseau, Ecole polytechnique, 2011. https://pastel.hal.science/docs/00/60/43/62/PDF/tissandier_these_finale.pdf.
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Ce travail s'inscrit dans le cadre du développement des sources XUV impulsionnelles cohérentes, et plus particulièrement des lasers XUV. Alors que la plupart des lasers XUV fonctionnent en régime d'émission spontanée amplifiée, c'est ici une géométrie de type oscillateur-amplificateur inspirée des lasers de puissance qui est étudiée. L'amplificateur, un plasma de krypton ionisé 8 fois par un champ laser intense, est injecté par un rayonnement harmonique d'ordre élevé à la même longueur d'onde. La source ainsi créée est étudiée aussi bien expérimentalement que numériquement, et l'accent est mis sur l'effet de l'amplification du faisceau harmonique par le plasma sur les caractéristiques spatiales du faisceau résultant (profil spatial, cohérence transverse et front d'onde), et ses caractéristiques spectro-temporelles. Il est entre autres démontré que, du fait du filtrage spatial par l'amplificateur, le faisceau possède des qualités optiques dignes du domaine visible (forte cohérence et proche de la limite de diffraction) et que son profil spatial peut être contrôlé entre un profil gaussien et un profil de Bessel. Ce faisceau se compose par ailleurs d'impulsion µJ de durée ps en limite de Fourier. Afin d'augmenter l'intensité de ces impulsions, on se propose également de guider l'impulsion de pompe dans un canal plasma préformé par laser à densité quasi-critique. Le guidage a été démontré et des résultats prometteurs ont ainsi été obtenus en régime non-injectéPlasma-based soft-x-ray lasers are a promising coherent source complementary to the soft-x-ray free-electron laser. While most of the soft x-ray lasers in the world operate in the ampliifcation of spontaneouse emission regime, we study here a oscillator-amplifier geometry, following the example of power lasers in the VIS/IR range. The amplifier is a 8 times-ionized krypton plasma resulting from optical field ionization of a low-density gaseous target by an intense laser pulse. This amplifier is seeded by a high-order harmonic radiation at the same wavelength. We present here experimental and numerical results focused on the effect of the amplification on the spatial characteristics of the resulting beam (spatial profile, transverse coherence and wavefront) as well as its spectro-temporal properties. We show that, due to spatial filtering of the harmonic beam by the amplifier, the seeded beam exhibits remarkable characteristics such as a strong transverse coherence and a near diffraction-limit wavefront. It is also shown that its spatial profile can be controled from a Gaussian profile to a Bessel profile with several intense rings. This beam is made up of Fourier-limited microjoule picosecond pulses. A lead to enhance this source intensity is to generate the amplifier in a near-critical density plasma. This was achieved by guiding the pump laser pulse in an optically preformed waveguide. Guiding was demonstrated and promising results were obtained in the amplification of spontaneous emission regime
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Shaik, Khajaahmad. "High-speed low-power 0.5-V 28-nm FD-SOI 5T-cell SRAMs." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066046.
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L'objectif de cette thèse est d'atteindre 0,5 V haute vitesse faible puissance SRAM. Pour ce faire, les cellules SRAM de pointe, des tableaux et des architectures de bus sont examinées. Les questions difficiles sont alors précisées. Pour répondre aux exigences, une cellule de 5T d'alimentation statique de puissance boostée, combiné avec WL boosté et milieu point de détection et d'un tableau de multi divisé BL ouvert sont proposées et évaluées. Pour encore accélérer l'opération d'écriture, un tableau de 4Kb sélectivement stimulé puissance alimentation 5T cell est proposé et évalué par simulation. Nous découvrons que le point milieu de détection avec moitié VDD BL precharge est plus stable lors de lire que la VDD complet conventionnelle precharge. En outre, pour atteindre un bus robuste à grande vitesse de faible puissance 0,5-V,une architecture de bus dynamique avec un bus factice, qui se compose d'un pilote de dynamique et d'un récepteur dynamique, est proposée. Le pilote dynamique permeten particulier de grande vitesse même à 0,5 V avec overdrive porte accrue enchangeant les lignes électriques de VDD/2 en mode veille avec VDD en mode actif. Ilaccélère encore avec l'aide du bus factice cette impulsion gena pour suivre le point dedétection tension du bus pour réduire l'oscillation de l'autobus. Ensuite, unearchitecture de bus 0,5-V 28 nm FD-SOI 32 bits à l'aide de la proposition estevaluaevaluated par simulation. Il s'avère que l'architecture a un potentiel à exploiterun bus 1-pF à 50-mV swing, 1,2 GHz et un courant de veille de 1,1 µA, avec x3-5 plus rapidement et plus de deux ordre plus faible courant de veille que l'architecture statique conventionnelleThe goal of the thesis is to achieve 0.5-V high-speed low-power SRAMs. To do so, state-of-the-art SRAM cells, arrays, and bus-architectures are reviewed. The challenging issues are then clarified as 1) reduction of the minimum operating voltage VDD (Vmin) of the cell, 2) reducing bitline (BL)-active power, and 3) achieving low-power bus architecture. To meet the requirements, a static boosted-power-supply 5T cell, combined with boosted-WL and mid-point-sensing, and an open-BL multi-divided-array are proposed and evaluated. Layout and post-layout simulation with a 28-nm fully-depleted planar-logic SOI MOSFET reveal that a 0.5-V 5T-cell 4-kb array in a 128-kb SRAM core is able to achieve x2-3 faster cycle time and x11 lower power than the counterpart 6T-cell array, suggesting a possibility of a 730-ps cycle time at 0.5 V.To further speed up the write operation, a selectively-boosted-power-supply 5T-cell 4-kb array is proposed and evaluated by simulation, showing that the 4-kb array operates at 350-ps cycle with x6 faster cycle time and x13 lower power than the 6T-cell array, while maintaining a small leakage current. We find out that the mid-point-sensing with half-VDD BL-precharging is more stable during read than the conventional full-VDD precharging. Furthermore, to achieve a 0.5-V low-power high-speed robust bus, a dynamic bus architecture with a dummy bus, which consists of a dynamic driver and a dynamic receiver, is proposed. In particular, the dynamic driver enables high speed even at 0.5 V with increased gate-over-drive by changing the power lines from VDD/2 in the standby mode to VDD in the active mode. It further speeds up with the help of the dummy bus that generates a pulse to track the bus-voltage detecting point for reducing the bus swing. Then, a 0.5-V 28-nm-FD-SOI 32-bit bus architecture using the proposal is evaluated by simulation. It turns out that the architecture has a potential to operate a 1-pF bus at about 50-mV swing, 1.2 GHz, and a standby current of 1.1 µA, with x3-5 faster and more than two-order lower standby current than the conventional static architecture. Based on the results, further challenges to 0.5-V and sub-0.5-V SRAMs are described
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Decorps, Tifenn. "Barrières métalliques auto-alignées déposées par voie electroless pour la fabrication des interconnexions au nœud 32 nm : étude electrochimique, propriétés physico-chimiques et enjeux technologiques." Grenoble INPG, 2007. http://www.theses.fr/2007INPG0135.
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L' utilisation du cuivre comme métal conducteur dans les interconnexions a entraîné l'apparition de nouvelles solutions technologiques. Afin de d'empêcher la 'fusion du cuivre dans le matériau diélectrique interligne, il est nécessaire d'encapsuler les interconnexions par une couche barrière. Les barrières !Iectriques actuelles en SiCCN) contribuent à l'augmentation des phénomènes de couplage capacitifs, et les phénomène d'électromigration sont connus ,ur apparaître au niveau de l'interface cuivre - barrière. Afin de limiter ces phénomènes, une solution consiste à déposer sélectivement à la surface des nes de cuivre des barrières métalliques par voie electroless. Différents procédés de dépôts electroless conduisant à des dépôts d'alliages de cobalt IWP(B) et de nickel NiMoPB sont étudiés en équipement industriel pour plaques de 300 mm. Deux de ces barrières sont déposées après activation de la rface du substrat en cuivre par un dépôt de palladium, les trois autres dites auto-initiées étant déposées directement à la surface du cuivre. L'étude !ctrochimique des réactions d'oxydoréduction qui ont lieu durant le dépôt electroless met en évidence que le dépôt de ces alliages est un dépôt anormal tié par la présence de Had5 à la surface du substrat. Les cinétiques de dépôt diffèrent en fonction de l'état de surface du substrat en cuivre: elles sont plus pides sur motifs, et sont favorisée sur les grains de cuivre d'orientation (111). L'information cristalline du cuivre semble être conservée dans la barrière ~tallique. Par ailleurs, la composition des films métalliques joue sur leur microstructure: une concentration plus importante en métal réfractaire diminue Jr cristallinité. Des premières analyses de leurs propriétés en tant que barrières à la diffusion du cuivre indiquent que leurs performances sont moindres le celle de la barrière diélectrique actuelle. D'un point de vue électrique, les procédés avec activation du substrat en cuivre par dépôt de palladium éservent les propriétés d'isolation des lignes de cuivre mais dégradent légèrement leurs propriétés de conduction, à l'inverse des procédés auto-initiés. Les >Is de résistance à l'électromigration effectués avec le procédé CoWP Enthone (avec activation) montrent que l'intégration des barrières métalliques posées par voie electroless améliore la durée de vie des interconnexions d'un facteur 10000 dans les conditions standard d'utilisation, en modifiant la :alisation du mécanisme de dégradation des interconnexions par les phénomènes d'électromiarationThe use of copper as a conductive metal for the fabrication of advanced interconnects has driven the emergence of innovative technological solutions. To event copper diffusion into the surrounding dielectric material, it is mandatory to encapsulate copper lines with a barrier layer. Currently, the SiC(N) materials used for this application contribute to capacitive coupling, and electromigration failure proceeds through this copper - barrier interface. To Ii mit ese phenomena, a possible solution would be to selectively deposit metallic barriers on top of the copper lines, which can be achieved by electroless position. Several electroless processes are investigated or 300 mm wafer processing using an industrial deposition equipment, which lead to the selective position of cobalt-based CoWP(B) and nickel-based NiMoPB alloys. Among them, two are deposited using an intermediate activation of the metallic surfacepalladium deposition. The three others named self-initiated are directly deposited onto copper. The electrochemical study of the redox reactions that cur during deposition indicates that this anormal deposition is initiated by the presence of adsorbed Hads at the copper surface. Reaction kinetics depend 1 the type of surface to be plated: deposition proceeds faster on features as compared to fullsheet, and seems to be enhanced on (111) oriented copper ains. Also, the microstructure of the film is conditioned by its composition: a higher content in refractory metalleads to more amorphous deposits. :ntative characterization of their properties as diffusion barriers suggest that they do not offer he same level of performances as conventional dielectric fers. Electrical tests show that the palladium activated processes preserve insulation performances, but slightly increase line resistance. The reverse Ihaviour is observed for self-initiated processes. Electromigration tests using the activated CoWP process from Enthone establish that these electrolessly lposited films drastically improve lifetime of the structures. Under working conditions, this lifetime is multiplied by a factor of 10000, due to the different !ctromigration failure mechanism induced bv these barri ers
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Guo, Wei. "Etude expérimentale et modélisation du bruit basse fréquence en fonction de la température (80K-300K) dans des transistors MOS issus de plusieurs technologies avancées (0,13mum-32 nm)." Caen, 2008. http://www.theses.fr/2008CAEN2058.
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Dans cette thèse, une étude expérimentale du bruit basse fréquence est réalisée en fonction de la température entre 80K et 300E pour des transistors MOS issus de trois technologies avancées de 0,13 mum à 32 nm. Pour les transistors MOS partiellement déplétés sur substrat SOI (Silicon on insulator), un modèle complet du bruit Lorentzien filtré dû à l’effet Kink linéaire est proposé et validé en fonction de la température. Pour les transistors MOS en germanium sur substrat de silicium avec un isolant de grille à haute permittivité, il a été observé du bruit en 1/fγ expliqué par des fluctuations du nombre de porteurs corrélées avec les fluctuations de mobilité et il a été montré que l’utilisation d’un empilement pour la grille dégrade la qualité de l’interface entre semi-conducteur et oxyde de grille. Une corrélation entre la mobilité et le niveau de bruit a été observée : celle-ci est probablement due à l’action du mécanisme des collisions coulombiennes sur la mobilité et le bruit. Pour les transistors MOS sur substrat SOI à mutli-grille (FinFET), l’introduction des mécanismes de contrainte permet d’augmenter la mobilité mais ne change pas le niveau du bruit basse fréquence. En outre, un bruit inhabituel sous forme de spectre à deux niveaux de en 1/f combines est observé dans les transistor MOS FinFET type N qui ont subi la technique de croissance sélective épitaxiale. Un modèle empirique est proposeIn this work, low frequency noise is studied in three advances transistors MOS technologies from 0. 13 mum node to 25 nm node at different temperature from 80 K to 300 K. For partially depleted transistors MOS on SOI (Silicon on insulator) substrate, a completed model for linear Kink effect induced filtered Lorentzian noise has been proposed and validated by the noise study at different temperatures. For the germanium transistors MOS on silicon substrate with “High-k” gate stack, 1/fγ noise is observed and explained by the carrier number fluctuations correlated with the mobility fluctuations, and it has been shown that the “High-k” gate stack degrades the semi-conductor/oxide interface quality. A correlation between low-field mobility and 1/f noise magnitude is reported: it is probably due to remote coulomb scattering. For the tri-gate transistors MOS (FinFET) with strain engineering, a mobility enhancement is produced but no clear correlation has been found between the applied strain techniques and the noise level in the last, an unusual noise spectral density with two combined 1/f noise levels was observed for the N type FinFETs with selective epitaxial grown (SEG) source and drain regions. An empirical model has been proposed
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CORDEIRO, MAURO CEZAR REBELLO. "EXPERIMENTAL EVALUATION OF SCINTILLATION EFFECTS IN FREE SPACE OPTICAL CHANNEL IN 780 NM, 1550 NM AND 9100 NM." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2008. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=12289@1.
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PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIROA comunicação óptica por laser no espaço livre é uma área que vem despertando crescente interesse, nos últimos anos, em função da possibilidade de resolver o problema de difusão da informação, dando acesso de alta capacidade ao usuário. Sistemas ópticos sem fio oferecem rapidez na sua instalação e inicialização, além de um sistema flexível com largura de banda equivalente à da fibra óptica, em torno de 1.5 Gbps para sistemas comerciais disponíveis atualmente. O cerne da problemática que envolve as aplicações de sistemas ópticos sem fio é a propagação óptica no espaço livre. A grande diferença entre a transmissão a laser no espaço livre e na fibra óptica é a previsibilidade da atenuação da potência do sinal do laser na fibra quando comparado à atmosfera. Além da variabilidade da atenuação atmosférica devida à presença de partículas e aerossóis, um dos fenômenos que afeta a propagação de um feixe laser é a turbulência atmosférica, que ocorre mesmo em condições de alta transparência. Flutuações randômicas na temperatura do ar produzem pequenas heterogeneidades no índice de refração ao longo do caminho de propagação da luz. Essas alterações no índice de refração provocam flutuações na velocidade de fase do sinal que se propaga, causando distorção da sua frente de onda. À medida que a frente de onda se distorce e avança num meio com turbulência, ocorrem mudanças aleatórias na direção do feixe gerando flutuações na sua intensidade, contribuindo para a degradação do sinal na recepção. Nesta tese os efeitos da cintilação, decorrentes da turbulência atmosférica, foram avaliados por meio de um experimento utilizando três enlaces operando no espaço livre em três comprimentos de onda diferentes. Foi observado que o speckle gerado pela fibra óptica de alimentação dos transmissores de 780 nm and 1550 nm acentua os efeitos da cintilação.
Optical laser communication in free space is an area that has been attracting increasing interest in the last years, due to its possible capacity to resolve the problem of information diffusion, giving higher capacity access to users. Wireless optical systems offer speedy installation and initialization procedures and system flexibility, with the equivalent frequency bandwidth as optical fiber systems, around 1.5 Gbps for the commercial systems available nowadays. The critical aspect involving the application of wireless optical systems is free space optical propagation. The great difference between the laser free space and optical fiber transmissions is the capacity to predict the signal power attenuation that propagates into the optical fiber, when compared to the atmosphere propagation. Besides the variability of the atmospheric attenuation due to the presence of particles and aerossois, one of the phenomena that affects laser beam propagation is atmospheric turbulence, that occurs even in high transparency atmospheric conditions. Random fluctuations in air temperature generate small inhomogenities in the refraction index throughtout the light propagation path. These changes in the refraction index cause fluctuations in the phase speed of the signal that is spread over this path, causing distortion in its wave-front. As the wave-front distorts and reaches medium with turbulence, random changes occur in the beam direction, creating fluctuations in its intensity, which contribute to the degradation of the signal reception. In this thesis the effects of the scintillation, due to atmospheric turbulence, were experimentally evaluated using three free space links with three different wavelengths. The experimental results have shown that the speckle pattern generated by the optical fiber feeding the 780 nm and 1550 nm transmitters affected the link performance at these wavelengths.
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Patterson, Kyle William. "Design, synthesis, and optimization of materials for 193 nm and 157 nm photoresists /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.
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Almeida, Thomé Simpliciano. "Sensibilidade da refletância de uma floresta tropical em 460 nm, 650 nm e 850 nm aos parâmetros ópticos e arquitetônicos do dossel." Universidade Federal de Viçosa, 2009. http://locus.ufv.br/handle/123456789/5226.
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Previous issue date: 2009-02-16Conselho Nacional de Desenvolvimento Científico e Tecnológico
Studying and monitoring the vegetation - forest, savannah or other types - is important to understand the current climatic standard. Dynamical vegetation models (DVM) are useful tools in biome studies as they are based on physical principles as well as on initial and boundary conditions, therefore can obtain evidence of the influence of factors on the modeled environment, predict future vegetation behavior and, in association with other models, make predictions about vegetation future influence on climate or about the effect of climate change on vegetation. In particular, reflectance models are part of DVMs. Some studies have attempted to identify, canopy elements on the response of the vegetation cover albedo, the effect of obtaining the best parameters configuration. However, the reflectance study for electromagnetic spectrum narrower bands shows further features of the studied objects. Important features are estimated from the response of specific bands vegetation reflectance. Therefore, the objective of this thesis was to add three bands - red, near infrared and blue, corresponding to the bands 1, 2 and 3 of the sensor MODIS, onboard the TERRA and AQUA satellites, into the IBIS model - Integrated Biosphere Simulator, observe the canopy reflectance sensitivity to architectural and optical parameters, and calibrate these parameters according to the surface reflectance products and vegetation index from MODIS for the Reserve Cuieiras (K34). The sensitivity analysis indicates a strong response to the upper canopy parameters. The parameters combination that minimizes the RMSE of EVI - Enhanced Vegetation Index (RMSE = 0.0245) are the slope of the upper canopy leaves up χ = 0.92, reflectance from the upper canopy leaves in the blue band blue−up ρ = 0.0162, red band red −up ρ = 0.0466 and near infrared band nir−up ρ = 0.4427.
Estudar e monitorar a vegetação - floresta, cerrado ou outro tipo de cobertura - é de suma importância para se entender o padrão climático atual. Os Modelos de Dinâmica de Vegetação (MDV) são ferramentas úteis nos estudos de determinado bioma, pois são baseados em princípios físicos e em condições iniciais e de contorno, podendo então obter indícios dos fatores que influenciam o ambiente modelado, fazer previsões futuras do comportamento da vegetação e, associados a outros modelos, fazer previsões futuras da influência da vegetação no clima, ou da mudança do clima na vegetação. Em particular, os modelos de refletância fazem parte dos MDV. Alguns estudos têm sido feitos para identificar a influência dos componentes do dossel sobre a resposta do albedo da cobertura vegetal, obtendo a melhor configuração dos parâmetros a serem usados. Porém, o estudo da refletância para menores faixas do espectro eletromagnético indica mais detalhadamente as feições dos alvos estudados. Para a vegetação, importantes características são estimadas a partir da resposta da refletância de faixas específicas. Nesse aspecto o objetivo desse trabalho foi adicionar três bandas vermelho, infravermelho próximo e azul, referentes às bandas 1, 2 e 3 do sensor MODIS, a bordo dos satélites TERRA e AQUA, no modelo IBIS - Integrated Biosphere Simulator - observando a sensibilidade aos parâmetros óticos e arquitetônicos do dossel e calibrando esses parâmetros de acordo com os produtos de refletância de superfície e índice de vegetação do MODIS para a Reserva do Cuieiras (K34). A análise de sensibilidade indicou forte resposta para os parâmetros referentes à parte superior do dossel. A combinação dos parâmetros que minimizou o RMSE do EVI - Enhanced Vegetation Index (RMSEmin = 0,0245) foi a inclinação das folhas do dossel superior up χ = 0,92, refletância das folhas da parte superior do dossel na faixa do azul blue−up ρ = 0,0162, vermelho red −up ρ =0,0466 e infravermelho próximo nir−up ρ = 0,4427.
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Bettinelli, Claudio. "Etude de la photolyse à 266 nm ou 355 nm de composés carbonylés d’intérêt atmosphérique." Thesis, Lille 1, 2011. http://www.theses.fr/2011LIL10129/document.
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Les sources d’émission de composés organiques volatils (COV) dans l’atmosphère sont très majoritairement la végétation, suivie par l’activité humaine. Les arbres (forêts d’Amérique du Nord) émettent de grandes quantités d’isoprène, hydrocarbure insaturé qui conduit par oxydation à de nombreux composés carbonylés, dont la méthylvinylcétone (MVK) et l’hydroxyacétone (HAC). Ces COV secondaires sont eux-mêmes oxydés ou photolysés. Des mécanismes élaborés de dégradation de l’isoprène, comprenant plusieurs dizaines de réactions incluant toutes les espèces secondaires (mécanismes des groupes de Mainz (Allemagne) ou de Leeds (Royaune-Uni)), se développent par l’ajout de données expérimentales nouvelles ou plus précises. En particulier, les rendements quantiques de photolyse, définis comme la fraction de photons absorbés donnant lieu à une dégradation des molécules, sont peu connus car difficiles à mesurer ou devant être déduits du rendement de produits secondaires. Ce travail est une contribution à la détermination des rendements quantiques de photolyse de composés carbonylés. Nous avons utilisé la photolyse laser couplée à la spectroscopie infrarouge de CO ou H2CO résolue dans le temps. L’acétone, l’HAC ont été photolysées à 266 nm, l’acroléine et la MVK à 355 nm. Des rendements quantiques ont été obtenus mais doivent être pris avec précaution compte-tenu de la possible absorption à plusieurs photons, dont CO observé dans des états vibrationnels excités constitue la preuve. La photolyse de l’acroleine et du 3,3,3-trifluoropropanal, aldéhyde fluoré provenant de la dégradation des HFC, ont également été étudiées à 248 nm et analysée conjointement par CRDS dans un autre groupeEmissions of organic volatile compounds in the atmosphere (COV) are due to human activities, and mainly from vegetation. Isoprene, which is an unsaturated hydrocarbon, is emitted in large quantities by deciduous trees (forests of North America) and leads by oxidation to carbonyl compounds, like methylvinylketone (MVK) or hydroxyacetone (HAC). These compounds are themselves oxidized or photolysed. Mechanisms of isoprene oxidation, comprising tens of reactions including all secondary species, are still under development (Mainz or Leeds mechanisms). They are improved by inclusion of new or more precise experimental data, like quantum yields of photolysis, which are defined as the efficiency of photons in breaking bonds. We used time-resolved laser infrared spectroscopy coupled to UV laser photolysis (TDLAS) to study the photolysis of acetone and HAC at 266 nm, and of MVK and acrolein at 355 nm. Quantum yields were obtained, but they should be taken with care due to the multi-photons absorption which occurred, demonstrated by the observation of CO in vibrational excited states. A joint analysis of the photolysis at 248 nm of acrolein and 3,3,3-trifluoropropionaldehyde by CRDS was also studied. The quantum yields of different channels of photolysis were obtained
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Böse, Katharina [Verfasser], and Alexandra K. [Akademischer Betreuer] Kiemer. "Interactions of 3 nm, 8 nm, and 15 nm gold particles with human alveolar epithelial cells : a microscopy study / Katharina Böse. Betreuer: Alexandra K. Kiemer." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2013. http://d-nb.info/1053682131/34.
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El, dirani Hassan. "Étude détaillée des dispositifs à modulation de bandes dans les technologies 14 nm et 28 nm FDSOI." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT098/document.
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Durant les 5 dernières décennies, les technologies CMOS se sont imposées comme méthode de fabrication principale pour les circuits semi-conducteurs intégrés avec notamment le transistor MOSFET. Néanmoins, la miniaturisation de ces transistors en technologie CMOS sur substrat massif atteint ses limites et a donc été arrêtée. Les filières FDSOI apparaissent comme une excellente alternative permettant une faible consommation et une excellente maîtrise des effets électrostatiques dans les transistors MOS, même pour les nœuds technologiques 14 et 28 nm. Cependant, la pente sous le seuil (60 mV/décade) du MOSFET ne peut pas être améliorée, ce qui limite la réduction de la tension d’alimentation. Cette restriction a motivé la recherche de composants innovants pouvant offrir des déclenchements abrupts tels que le Z2-FET (Zéro pente sous le seuil et Zéro ionisation par impact), Z2-FET DGP (avec double Ground Plane) et Z3-FET (Zéro grille avant). Grace à leurs caractéristiques intéressantes (déclenchement abrupte, faible courant de fuite, tension de déclenchement ajustable, rapport de courant ION/IOFF élevé), les dispositifs à modulation de bandes peuvent être utilisés dans différentes applications. Dans ce travail, nous nous sommes concentrés sur la protection contre les décharges électrostatiques (ESD), la mémoire DRAM embarquée sans capacité de stockage, et les interrupteurs logiques. L’étude des mécanismes statique et transitoire ainsi que des performances de ces composants a été réalisée grâce à des simulations TCAD détaillées, validées systématiquement par des résultats expérimentaux. Un modèle de potentiel de surface pour les trois dispositifs est également fourniDuring the past 5 decades, Complementary Metal Oxide Semiconductor (CMOS) technology was the dominant fabrication method for semiconductor integrated circuits where Metal Oxide Semiconductor Field Effect Transistor (MOSFET) was and still is the central component. Nonetheless, the continued physical downscaling of these transistors in CMOS bulk technology is suffering limitations and has been stopped nowadays. Fully Depleted Silicon-On-Insulator (FDSOI) technology appears as an excellent alternative that offers low-power consumption and improved electrostatic control for MOS transistors even in very advanced nodes (14 nm and 28 nm). However, the 60 mV/decade subthreshold slope of MOSFET is still unbreakable which limits the supply voltage reduction. This motivated us to explore alternative devices with sharp-switching: Z2-FET (Zero subthreshold slope and Zero impact ionization), Z2-FET DGP (with Dual Ground Planes) and Z3-FET (Zero front-gate). Thanks to their attractive characteristics (sharp switch, low leakage current, adjustable triggering voltage and high current ratio ION/IOFF), band-modulation devices are envisioned for multiple applications. In this work, we focused on Electro-Static Discharge (ESD) protection, capacitor-less Dynamic Random Access Memory and fast logic switch. The DC and transient operation mechanisms as well as the device performance are investigated in details with TCAD simulations and validated with systematic experimental results. A compact model of surface potential distribution for all Z-FET family devices is also given
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Mehmet, Moritz [Verfasser]. "Squeezed light at 1064 nm and 1550 nm with a nonclassical noise suppression beyond 10 dB / Moritz Mehmet." Hannover : Technische Informationsbibliothek und Universitätsbibliothek Hannover (TIB), 2012. http://d-nb.info/1022760688/34.
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Leconte, Baptiste. "Développement de sources laser à fibre dopée Nd3+ pour une émission autour de 900 nm et 450 nm." Caen, 2016. https://tel.archives-ouvertes.fr/tel-01505597.
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De nombreux secteurs d’activité incluant les télécommunications et le biomédical nécessitent une source laser émettant dans le domaine spectral bleu avec une qualité de faisceau proche de la limite par diffraction. Pour obtenir une telle source, la solution retenue au cours de ce travail de thèse consiste à développer un système laser à fibre dopée Nd3+ de forte puissance opérant sur la transition 4F3/2-4I9/2 de l’ion Néodyme à 900 nm. Après doublage de fréquence dans un cristal non-linéaire, il devient alors possible d’accéder à des longueurs d’onde avoisinant 450 nm. Dans les fibres aluminosilicates, il existe néanmoins une forte compétition entre la transition 4F3/2-4I9/2 à 3 niveaux d’énergie de l’ion Nd3+ et la transition 4F3/2-4I11/2 autour de 1060 nm présentant un schéma à 4 niveaux d’énergie, ce qui constitue le principal obstacle à l’obtention d’une émission laser efficace à 900 nm. Dans un premiers temps, une étude théorique nous permet de déterminer les paramètres géométriques optimaux de fibres dopées Nd3+ à structure double-gaine afin de favoriser l’émission laser sur la transition d’intérêt. Ces fibres optimisées, réalisées par notre partenaire industriel iXblue, sont utilisées dans différentes architectures laser et d’amplification permettant notamment un accord en longueur d’onde sur une large gamme spectrale autour de 900 nm et l’amplification sélective de modes transverses. Dans ce cadre, les performances atteintes en termes de puissance et de qualité spatiale de faisceau à 900 nm autorisent une conversion de fréquence efficace autour de 450 nm, ce qui a mené au développement de nouvelles sources laser bleues opérant en régimes continu et impulsionnelMany fields including telecommunications and biomedicine require a laser source emitting in the blue spectral region with a diffraction-limited beam. To obtain such a source, the solution adopted in this thesis work is to develop a high-power Nd-doped fiber laser source operating on the 4F3/2-4I9/2 transition of Neodymium ion at 900 nm. After frequency doubling in a non-linear crystal, it is then possible to have access to wavelengths around 450 nm. However in aluminosilicate fibers, there is a strong competition between the three-level transition 4F3/2-4I9/2 of Nd3+ ion and the four-level scheme of the 4F3/2-4I11/2 transition around 1060 nm, which constitutes the main obstacle to overcome to obtain an efficient laser emission at 900 nm. As a first step, a theoretical study allows us to determine optimal geometrical parameters of double-clad Nd-doped fibers to foster laser emission on the transition of interest. Once fabricated by our industrial partner iXblue, the optimized fibers are used in several laser and amplification architectures leading for instance to wavelength-tunability on a wide spectral bandwidth around 900 nm and to selective amplification of transverse guided modes. In parallel, performances reached in terms of power and beam spatial quality at 900 nm permits an efficient frequency conversion, which led to the development of new blue laser sources operating in continuous-wave and pulsed regimes around 450 nm
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Centurión, Patricio, J. L. Cuba, and A. Noriega. "Liposucción con diodo láser 980-nm (LSDL 980-nm): optimización de protocolo seguro en cirugía de contorno corporal." Sociedad Española de Cirugía Plástica, Reparadora y Estética (SECPRE), 2014. http://hdl.handle.net/10757/320971.
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pccenturion@gmail.comIntroduction: Liposuction has undergone several improvements since its first description, including changes in the cannulas, variation in the concentration of the infiltrating solution, and the use of different devices and technologies. The use of laser technology devices for lipolysis and stimulation of skin retraction has contributed to the procedure. This article presents the authors’ experience with laser lipolysis in 400 patients, within a 5-year period, and discusses the principles of the technology and its effect on tissues. Methods: This is a study performed between July 2007 and July 2012 and included 400 patients who underwent laser lipolysis. All procedures were performed following the original protocol – infiltration of cold saline, passage of the cannula with an optic fiber for conducting the energy needed for laser lipolysis, skin retraction, and finally, conventional liposuction. Results: Hospitalization type ranged from outpatient to overnight surgery. Approximately 45% (180 of 400) of patients had minimal bruising, with involvement of 2% or more of the affected body surface. Hematoma, seroma, and dehiscence occurred in a total of 9% (36 of 400) of patients. We did not find any case of thermal burn of the skin. Conclusions: Laser lipolysis performed according to the described technique was safe and reproducible.
Introdução: A técnica de lipoaspiração recebeu várias contribuições desde sua primeira descrição, como modificações nas cânulas, variação na concentração da solução de infiltração e uso de aparelhos com tecnologias variadas. A utilização de aparelhos com tecnologia laser vem contribuir com o procedimento por meio da lipólise e com o estímulo de retração cutânea. Neste artigo é apresentada a experiência dos autores com a laserlipólise em 400 pacientes, no intervalo de 5 anos, sendo discutidos aspectos dos princípios da tecnologia e sua ação sobre os tecidos. Método: Estudo realizado entre julho de 2007 e julho de 2012, que incluiu 400 pacientes submetidos a procedimento de laserlipólise. Os procedimentos foram realizados seguindo protocolo original, com infiltração de soro gelado, passagem da cânula com fibra óptica para a condução da energia laser visando à laserlipólise, retração cutânea e, por último, lipoaspiração convencional. Resultados: O período de internação variou de cirurgia em regime ambulatorial a pernoite. Cerca de 45% (180/400 pacientes) dos pacientes evoluíram com equimoses mínimas, com acometimento de 2% ou mais da superfície corporal comprometida. Os casos de hematoma, seroma e deiscência totalizaram 9% (36/400 pacientes). Em nenhum caso foi constatada queimadura por lesão térmica na pele. Conclusões: O procedimento de laserlipólise realizado com a técnica descrita demonstrou segurança e reprodutibilidade
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Huynh, V. "Reconstitution of the 30-nm chromatin fiber." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604906.
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This thesis describes the production of folded and regular 30-nm chromatin fibers reconstituted from purified components of DNA tandem repeats, histone octamer, and H5. Obtaining evenly spaced nucleosome arrays saturated with H5 is feasible with the use an artificially derived sequence with a high affinity for histone octamer. This artificial "sequence 601" positions the nucleosome specifically and uniquely. Folding of the 30-nm chromatin fiber requires that each DNA repeat (200 bp) be found or saturated with exactly one histone octamer and one H5. The basis of the reconstitution system presented in this thesis is the addition of mixed sequence competitor (or carrier) DNA which allows the reconstitution to be fully controlled. A combination of techniques including bandshift assays, restriction enzyme digestion, and electron microscopy are used to analyze the regularity and fully saturated nature of the reconstituted chromatin. The reconstituted chromatin arrays are shown to fold to form compact 30-nm chromatin particles as visualized by electron microscopy. The results suggest that a DNA fragment containing at least 19 tandem 200 bp 601 repeats (200-19mer) is required to produce stably folded particles as 200-12mer DNA repeats did not show sufficient stability. Analysis by cryoelectron microscopy showed that the reconstitution of 200-19mer DNA repeats resulted in both single chromatin particles and oligomerized chromatin fibers. Furthermore, the reconstituted chromatin fibers have a morphology similar to that of native chromatin fibers with the exception of appearing to be more regular (as desired). The production of regular chromatin fibers is a critical step towards the structural determination of the 30-nm chromatin fiber. Furthermore, these folded and reconstituted chromatin fibers provide the ideal substrate to address future questions of the role of higher order chromatin structure in biological processes.
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Saydjari, Yves [Verfasser], Norbert [Akademischer Betreuer] Gutknecht, and Ulrike [Akademischer Betreuer] Fritz. "Laser Application in Dentistry: Irradiation Effects of Nd:YAG 1064 nm and Diode 810 nm and 980 nm in Infected Root Canals - A Literature Overview / Yves Saydjari ; Norbert Gutknecht, Ulrike Fritz." Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1192308050/34.
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Poulin, Michel. "Étalon de fréquence optique absolue à 1556 nm utilisant la transition à deux photons du rubidium à 778 nm." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape4/PQDD_0021/NQ56843.pdf.
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SUN, CHIEN YUAN. "Analise comparativa do efeito da irradiacao do laser de GaAlAS em 780 nm e 660 nm na hipersensibilidade dentinaria." reponame:Repositório Institucional do IPEN, 2003. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11096.
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Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)
IPEN/D-MPLO
Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo
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May, Michael Julian. "Etude des résines à amplification chimique 193 nm de tonalité positive ou négative pour une application microélectronique sub65 nm." Strasbourg, 2008. https://publication-theses.unistra.fr/public/theses_doctorat/2008/MAY_Michael_2008_ED182.pdf.
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Ce travail vise l’étude des résines utilisées en microélectonique. Le procédé de fabrication des circuits intégrés nécessite en effet l’utilisation d’un polymère photosensible qui permet de définir des motifs sur le substrat silicium lors d’une étape d’insolation. Ces motifs servent ensuite de masque lors d’une étape de gravure plasma qui permet d’obtenir le tracé du circuit intégré. L’objectif principal a donc été d’étudier la résistance à la gravure des résines pour une chimie de gravure oxyde donnée. L’analyse de l’ensemble des résines met en évidence des modifications chimiques liées à l’utilisation de monomères acryliques, dont nous avons cherché à déterminer les causes et comment les réduire. Dans un second temps, nous avons cherché à déterminer la résolution limite qu’il est possible d’atteindre avec une résine négative en utilisant un interféromètre à immersion. Nous avons ainsi démontré que les résines négatives nesont pas compétitives vis-à-vis des résines positivesThis work focuses on the study of photoresists. The fabrication process of integrated circuits requires their use for generating the resist patterns which later serve as a mask during an etch step that transfer the patterns into the substrate. Therefore, we have studied the etch behaviour of negative and positive 193 nm resists when exposed to a chosen oxide etch plasma. The resist analyses have pointed out that the resist deprotection that occurs during the etch is linked to the acrylic monomers that are part of the resist. The evaluation of model polymers and formulations has then permitted to determine wich parameters are relevant to improve the etch resistance of 193 nm resists. We have then also studied the resolution limit of a negative tone resist using an immersion interferometer. This work has enabled to show that, in spite of the progress realized in the negative tone resist development, this tonality is not competitive compared to the common tonality
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Rathsack, Benjamen Michael. "Photoresist modeling for 365 nm and 257 nm laser photomask lithography and multi-analyte biosensors indexed through shape recognition." Access restricted to users with UT Austin EID, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3035170.
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Neves, Joana Brilhante das. "Desenvolvimento de um concentrador solar fixo para foto-estimulação." Master's thesis, FCT-UNL, 2011. http://hdl.handle.net/10362/7119.
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Dissertação para obtenção do grau de Mestre
em Engenharia BiomédicaCom este trabalho pretendeu-se desenvolver um protótipo que emitisse luz vermelha, de 660 nm de c.d.o., de forma a poder testá-la num alvo biológico e assim confirmar a sua eficácia no desenvolvimento de tecidos vivos. Ao longo do tempo de duração deste trabalho foram simulados, no programa de design óptico Zemax®, vários protótipos de emissores de luz vermelha, tais como: LEDs vermelhos, lentes de Fresnel com aberração cromática e concentradores de luz solar, posteriormente filtrada, de formas diversas. Com todos estes estudos, concluiu-se que a solução mais viável, em vários aspectos, seria a construção de um concentrador cónico com um filtro que deixasse passar apenas a luz desejada na extremidade. Descoberto o esquema ideal para o projecto, deu-se início à construção do concentrador cónico através de um processo de moldagem, pela maquinação de um molde interior, por torneamento de um cilindro de PVC, e um molde exterior de cimento. Com o concentrador construído, estudou-se a eficiência de transmissão do mesmo bem como a de três filtros ópticos, cada um transmitindo apenas uma gama de c.d.o. centrados em 650 nm, 660 nm e 850 nm, respectivamente. Por último, procedeu-se à aplicação da luz projectada em plantas a fim de se estudar o seu desenvolvimento como resposta às três radiações de c.d.o. diferentes. Os resultados obtidos mostram que a luz solar concentrada e filtrada pode ser usada para acelerar o crescimento de plantas, em particular quando filtrada com o filtro que transmite principalmente o c.d.o. de 660 nm.
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Carrinho, Patrícia Michelassi. "Estudo comparativo utilizando lasers de 685 nm e 830 nm no processo de reparo tecidual em tendões tenotomizados de ratos." Universidade Federal de São Carlos, 2004. https://repositorio.ufscar.br/handle/ufscar/5234.
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Previous issue date: 2004-02-18A lot of therapeutic techniques are used to accelerate and/or stimulate the tendineous repair process, among this techniques we have the low level laser therapy (LLLT). Therefore, this study had the aim of evaluating the effects of LLLT, in different wavelengths and different densities energy, on the tendineous repair process of calcaneal tendon of mice. In this study was used 48 male mice. 40 animals were submitted to the unilateral total tenotomy induced in the middle portion of the right calcaneal tendon. The tendons weren’t sutured after the surgery, just the skin around the surgery. The animals were randomized divided in 3 experimental groups (1, 2 and 3) and each group were divided in two subgroups. The subgroup A was treated with laser of 685 nm, 3 J/cm2, the subgroup B was treated with laser 685 nm, 10 J/cm2, the subgroup C was treated with 830 nm, 3 J/cm2 and the subgroup D with laser 830 nm, 10J/cm2; the subgroups E and F were classifieds as injured control/placebo treatment and non-injured control. It was used the lasers 685 nm and diode GaAlAs (830 nm), the parameters used in both lasers were 15 mW, continuos, power density of 5,4 W/cm2 and doses of 3 J/cm2 and 10 J/cm2. The applications were made punctually in each 24 hours, during 12 consecutive days, in just one point on the injured lesion. All animals were killed on the 13º day after the surgery and the tendons were extracted cirurgically and prepared for qualitative and quantitative analysis carry out through of polarization microscopy for obtain data of state of concentration, aggregation, orientation and deposition of collagen fibers in the site of tenotomy, was used measures of total birefringence take in polarization microscopy. After, it was obtained a picture of each tendon in the polarization microscopy for the qualitative histologic analysis of the tissue. The data analysis were made using the non-parametric test of multiple comparations in order to compare the data of all subgroups. It was found through of difference of OR (nm) values corresponding for the total birefringence that the molecules of collagen of tendons in process of tissue repair answered to the LLLT during the period of data collection, probabily through the increase in the fibroblastic proliferation and collagen synthesis. The tendinous repair of the subgroup A (685 nm, 3 J/cm2) showed the best result, considering the level of tissue organization, orientation, state of macromolecular aggregation and collagen deposition in the site of lesion. This subgroup was statistically different from the other subgroup, because it showed a higher OR value than the other subgroups treated with laser and the subgroup injured control/placebo treatment. We can conclude that, in the conditions our work was developed, there are different organizational answers in the injuried tendineous tissue and treated with LLLT. Therefore, there is a relationship between the improvement in the tendineous repair and the laser parameters used. In this case there were an acceleration of the tendineous repair when used the laser 685 nm and the dose of 3 J/cm2.
Várias técnicas terapêuticas são utilizadas para acelerar e/ou estimular o processo de reparo tendíneo, dentre elas a terapia laser de baixa potência (LLLT). Assim, este estudo teve por objetivo avaliar os efeitos do laser de baixa potência, aplicado a diferentes comprimentos de onda e diferentes densidades de energia sobre o processo de reparação tendínea no tendão calcanear de rato. Foram utilizados 48 ratos machos, onde 40 animais foram lesados por uma tenotomia total unilateral feita por cisalhamento induzida na porção média do tendão calcanear direito, os tendões não foram suturados após a incisão cirúrgica, somente a pele ao redor da incisão sofreu sutura. Os animais foram divididos aleatoriamente em 3 grupos experimentais homogêneos (1, 2 e 3), sendo que cada grupo foi subdividido em 2 subgrupos; o grupo 1 foi dividido em subgrupo A que recebeu tratamento com laser de 685 nm, 3 J/cm2 e subgrupo B que recebeu tratamento laser 685 nm, 10 J/cm2; o grupo 2 foi dividido em subgrupo C que recebeu tratamento com laser de 830 nm, 3 J/cm2 e subgrupo D cujo tratamento foi com laser de 830 nm, 10J/cm2 e o grupo 3 que também foi dividido em subgrupo E (CL/PL) e F (CP) que foram classificados como controle lesado/tratamento placebo e controle padrão respectivamente. Foram utilizados os lasers de 685 nm e o diodo Ga-Al-As (830 nm), os parâmetros dosimétricos utilizados para ambos os lasers foram (15 mW, contínuo, densidade de potência de 5,4 W/cm2 e doses de 3 J/cm2 e 10 J/cm2), as aplicações foram feitas pontualmente a cada 24 horas, durante 12 dias consecutivos, irradiando-se transcutaneamente um único ponto sobre a região da lesão. Todos os animais foram sacrificados no 13º de P.O. e seus tendões foram retirados cirurgicamente e processados para a análise qualitativa e quantitativa realizadas por meio da microscopia de luz polarizada para se obter dados sobre o estado de concentração, agregação, orientação e deposição das fibras colágenas no local da tenotomia, foi utilizado medidas de birrefringência total tomadas no microscópio de luz polarizada. Posteriormente os tendões foram fotografados no microscópio de polarização para a análise histológica qualitativa do tecido. A análise estatística utilizada foi o teste não-paramétrico de comparações múltiplas para a comparação de todos os subgrupos dois a dois afim de detectar possíveis diferenças estatísticas. Os achados demonstraram por meio de diferenças de valores de OR (nm), correspondentes à birrefringência total, que as moléculas de colágeno presentes nos tendões em processo de reparação tecidual responderam a LLLT durante o período da coleta do material, provavelmente através do aumento da proliferação fibroblástica e síntese de colágeno. A reparação tendínea do subgrupo A tratado com laser de 685 nm e 3 J/cm2 apresentou melhores resultados considerando o nível de organização, orientação, estado de agregação macromolecular e deposição das fibras colágenas no local da lesão, diferindo-se estatisticamente dos demais subgrupos, uma vez que este subgrupo apresentou valor de OR considerado estatisticamente maior que o OR dos demais subgrupos tratados com laser e o subgrupo controle lesado/tratamento placebo. Com base nos nossos resultados podemos concluir, nas condições que o nosso trabalho foi desenvolvido, que há diferenças na resposta organizacional do tecido tendíneo lesado e estimulado pela LLLT, há portanto uma relação de melhora do reparo tendíneo com a combinação dos parâmetros laser utilizados; neste caso houve aceleração do processo de reparação tendínea quando utilizou-se o laser de 685 nm e 3 J/cm2.
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Kaufmann, Kai [Verfasser]. "Laserinduzierte Lift-Off-Prozesse in Cu(In, Ga)Se2-Dünnschichtsolarzellen bei Wellenlängen von 1064 nm und 1342 nm / Kai Kaufmann." Halle, 2018. http://d-nb.info/1172288321/34.
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Sele, Christoph W. "Self-aligned printing with sub-100 nm resolution." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.428804.
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Winston, Donald Ph D. Massachusetts Institute of Technology. "Sub-10-nm lithography with light-ion beams." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/71495.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.
Includes bibliographical references (p. 203-212).
Scanning-electron-beam lithography (SEBL) is the workhorse of nanoscale lithography in part because of the high brightness of the Schottky source of electrons, but also benefiting from decades of incremental innovation and engineering of apparatus around the Schottky source. Light ions are an attractive intermediary between electrons and heavy ions in terms of exposure efficiency and resolution by attaining a minimal interaction volume within the resist layer, if only we had bright sources of these light ions and could thus achieve small spot sizes. In this thesis, I present sub-10-nm lithography at high exposure efficiency using the gas field ionization source (GFIS) with helium and neon ions. I also present preliminary results using the magnetooptical trap ion source (MOTIS) with lithium ions. This work has also challenged the understanding of exposure efficiency as directly proportional to the so-called stopping power of incident beam particles - i.e. the average energy loss per unit path length, particularly for thin (less than 20 nm thick) resist. Values of stopping power are readily obtained via the popular Stopping and Range of Ions in Matter (SRIM) software for a variety of beam species and target materials at various landing energies, making this metric particularly convenient for predicting exposure efficiency. However, the exposure efficiency of neon ions for thin hydrogen silsesquioxane (HSQ) resist on bulk silicon is similar to that of gallium ions at 20-30 keV landing energy despite SRIM indicating a much larger stopping power for the gallium ions. Separating stopping power into nuclear and electronic components reveals that both the neon and gallium ions have similar electronic stopping powers. This correspondence points to electronic stopping power as a better indication of exposure efficiency in ion beam lithography. Unfortunately, the use of electronic stopping power alone to predict exposure efficiency has too been challenged by the data. Whereas the exposure efficiencies of neon and gallium ions were much higher than that of helium ions for the landing energies studied, the electronic stopping powers were all similar. One interpretation of this anomaly is that slower ions, i.e. neon and gallium ions in this case, for the same total energy dissipated via ionization per unit path length, produce a redshifted secondary-electron (SE) spectrum (with a correspondingly larger number of SEs), and that these lower-energy SEs are more efficient at exposure of resist. Such a phenomenon would be hidden by reliance on a single number, the electronic stopping power, to predict exposure efficiency. In addition to demonstrating sub-10-nm lithography at high exposure efficiency with light-ion beams, this thesis provides data toward predicting exposure efficiency in charged-particle-beam lithography in a way that is as simple as possible, but not simpler, using point exposures in a thin-film, high-contrast resist process. In contrast with SEBL, the lithographic techniques presented in this thesis are at their infancy. With further development, light-ion-beam lithography may serve as a useful complement to SEBL for nanofabrication in a wide variety of contexts.
by Donald Winston.
Ph.D.
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Wu, Sheldon Shao Quan. "Hydrocarbon-free resonance transition 795 nm rubidium laser." Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p3356349.
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Thesis (Ph. D.)--University of California, San Diego, 2009.Title from first page of PDF file (viewed July 9, 2009). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 110-113).
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Cho, Sungseo. "Synthesis of photoresist materials for 193 nm exposure /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.
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Clark, L. J., and E. R. Norton. "Short Staple Variety Trian in Virden, NM, 2001." College of Agriculture, University of Arizona (Tucson, AZ), 2002. http://hdl.handle.net/10150/197696.
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Twelve varieties were tested including three New Mexico (NM) Acalas and one Acala from ButtonWillow Research in California, six Roundup Ready varieties, five of which also contained the Bt gene, along with a couple of other varieties were planted including FiberMax 989R, the Roundup Ready version of FM 989, which was the highest yielding variety in the trial for two of the past three years. The highest yielding variety in the trial was SureGrow 215BR, the stacked (Bt/Roundup Ready version of SG 125), with a yield near 925 pounds of lint per acre. FM 989R and DP 436BR followed SG 215BR in yield with yields not significantly different from the leader. Yields were slightly lower than seen in the previous year’s study (1). Plant mapping data and fiber quality (HVI) data are also included in this report along with lint value estimates and crop value per acre.
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Clark, L. J., and E. R. Norton. "Short Staple Variety Trial in Virden, NM, 2002." College of Agriculture, University of Arizona (Tucson, AZ), 2003. http://hdl.handle.net/10150/197750.
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Twelve varieties were tested including two new herbicide resistant entries from California, Riata and Nova, two New Mexico Acalas, seven roundup resistant entries from Delta and Pine Land Co., Stoneville, SureGrow and FiberMax, and the new variety developed for the Arizona Cotton Grower’s Association, AG 3601. The highest yielding variety in the trial was FM 989 with a yield of 1045 pounds of lint per acre. It was also the highest yielding variety at this location last year. The Acala 1517-99 placed second in yield at 1039 pounds of lint per acre. HVI data are also included in this report.
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Clark, L. J., and E. R. Norton. "Short Staple Variety Trial in Virden, NM, 2003." College of Agriculture, University of Arizona (Tucson, AZ), 2004. http://hdl.handle.net/10150/198150.
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This study is a continuation of the variety trials that have been grown in the Duncan/Virden area over many years to supply yield and revenue data on premium cotton varieties for local growers. In recent years, the introduction of herbicide resistant cultivars has been particularly interesting to help clean up many weedy fields. The premium quality New Mexico Acala varieties do not, at this time, have herbicide resistance traits and have struggled to produce high enough yields to compete with the lower quality varieties that are available. Fifteen cotton varieties were tested including two 1517 varieties from New Mexico, Sierra, the newest Roundup-Ready from CPCSD, Salcot Sacala, a new acala from Arizona, and the AZ Cotton Growers variety. The rest of the entries were Roundup-Ready short to mid season varieties from Delta Pine, Stoneville, FiberMax and Paymaster. The highest yielding variety in the trial was Riata, a Roundup Ready Acala from CPCSD, with a yield of 1255 pounds of lint per acre. Sierra, ST 5599RR, ST 5303R and 1517- 99 produced around 100 pounds less lint per acre than Riata but the yields were not statistically different. Plant heights, first fruiting branches (FFB), total nodes and boll weights were measured and height to node ratios were calculated. Many differences were seen between varieties with all of these variables. The values of the variables defining the characteristics of the varieties. HVI data were obtained for fiber qualities of the lint of each variety. This data was then used to determine the value of the lint and then estimate the gross revenue produced by each variety. The highest lint value (cents per pound) was produced by 1517- 99 with 1517-95 and Riata following closely behind. The highest gross revenue was produced by Riata as a combination of the high yield and high lint value.
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Clark, L. J. "Short Staple Variety Trial in Virden, NM, 2000." College of Agriculture, University of Arizona (Tucson, AZ), 2001. http://hdl.handle.net/10150/211314.
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Twelve varieties were tested including three New Mexico Acalas and one Acala from Buttonwillow Research in California, three roundup ready varieties, a buctril resistant variety, a Bollgard variety and three other varieties. The highest yielding variety in the trial was FM 989 with a yield of 1046 pounds of lint per acre. It was also the highest yielding variety in the Cochise County trial the past two years, but had not been grown in Hidalgo or Greenlee Counties before. BW 9802, a variety from Buttonwillow Research in California, came in a close second. Interesting HVI data are also included in this report.
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Bazin, Arnaud. "Analyse de procédés de traitement plasma des résines photosensibles à 193 nm pour le développement de technologies CMOS sub-65 nm." Phd thesis, Grenoble INPG, 2009. http://tel.archives-ouvertes.fr/tel-00668121.
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Ce travail de thèse vise l'étude des interactions entre les plasmas utilisés en microélectronique et les résines à amplification chimique. Les procédés de fabrication employés en microélectronique nécessitent l'utilisation de matériaux polymères. Ces matériaux permettent dans un premier temps de définir des motifs représentant les différentes parties des composants électroniques, grâce à une étape de lithographie. Dans la suite du procédé de fabrication, ils jouent le rôle de masque afin de traiter les surfaces sous-jacentes aux endroits désirés. Une de ces étapes pour laquelle le polymère joue le rôle de masque est la gravure sèche par plasma, qui permet de transférer les motifs créés par lithographie dans le substrat et ainsi obtenir la structure du circuit intégré. Ainsi les résines employées doivent être suffisamment résistantes afin de remplir efficacement leur rôle de masque à la gravure. L'objectif principal de ce travail de thèse a donc été d'étudier la résistance à la gravure des résines à amplification chimique de dernière génération (193 nm) afin de mettre en évidence les dégradations de ces matériaux pendant les étapes de gravure, et de trouver des moyens d'améliorer leur résistance. Dans un premier temps le comportement des résines 193 nm a été comparé à une résine de référence plus résistante. Des analyses physico-chimiques (FTIR, XPS, DSC et TGA) ont permis de mettre en évidence les faiblesses des résines 193 nm liées à leur structure acrylique. La chimie des résines 193 nm étant complexe et devant répondre à de nombreux critères notamment pour l'étape de lithographie, il est préférable de les renforcer en tentant de contrôler les dégradations observées. Ainsi le deuxième objectif de la thèse a été d'étudier le renforcement des résines par des procédés plasma en utilisant des conditions particulières différentes des étapes de gravure. Les modifications spécifiques apportées par ces traitements sur les résines ont donc été mises en évidence, et le rôle prépondérant des émissions UV a notamment pu être prouvé. Enfin ces traitements plasma ont été appliqués sur des lignes de résines afin de montrer le fort potentiel applicatif de ces procédés pour améliorer deux points critiques : la vitesse de gravure et la rugosité des motifs.
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Frison, Blaise David. "Single and dual-wavelength lasing in the 800-820 nm and 1460 1520 nm bands in a thulium ZBLAN fibre laser." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=114254.
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Tm3+ ions provide amplification in a wide variety of wavelength bands,including 480 nm, 810 nm, 1480 nm, 1900 nm, and 2300 nm. This thesis presentsthe characteristics of lasers fabricated with Tm:ZBLAN fibre as the gain medium.First, a single-wavelength linear cavity fibre laser at 810 nm is presented. Dual-wavelength lasing and bistable behaviour are demonstrated in single cavity lasers,while dual-wavelength lasing, bistable behaviour and wavelength switching are demonstrated in cascaded cavity lasers. Second, single wavelengths fibre lasers at 1480 nm in linear and ring cavities are presented. A maximum power of 340 mW at 1476 nm was obtained. Dual-wavelength lasing at 1476 nm and 1487 nm is shown in cascaded cavity lasers. Finally, using bi-directional pumping in a cascaded cavity, dual-wavelengthlasing at 1487 nm and 1487.6 nm, with a record narrow spacing of 0.6 nm, isachieved.Le gain des ions de Tm3+ peut être utilisé dans un variété de bandes de longueurs d'ondes, incluant entre autres 480 nm, 810 nm, 1480 nm, 1900 nm et2300 nm. Ce mémoire présente les caractéristiques de lasers fabriqués avec des fibres de Tm:ZBLAN comme médium de gain. Premièrement, un laser à fibre à longueur d'onde simple à 810 nm, fabriquéavec une cavité linéaire est présenté. Une oscillation à longueurs d'ondes doubleset une opération bistable sont démontrées dans des lasers à cavités simples, puisune oscillation à longueurs d'ondes doubles, une opération bistable et une interversionde longueur d'onde sont démontrées dans des lasers à cavités en cascade. Ensuite, des lasers à fibre à longueurs d'ondes simples à 1480 nm, dans descavités linéaires et annulaires sont présentés. Un maximum de 340 mW à 1476 nma été obtenu. Des oscillations à 1476 nm et 1487 nm, obtenues avec des lasers àcavités en cascade, sont montrés.Finalement, un laser à 1487 nm et 1487,6 nm, avec l'aide d'une cavité en cascadepompée bi-directionnellement, est démontré, atteignant un écart record de0,6 nm.v
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Matos, Felipe de Souza. "Efeito da fotobiomodulação a laser de λ808 nm e λ660 nm no processo de reparo periodontal de dentes reimplantados em ratos." Universidade Federal de Sergipe, 2016. https://ri.ufs.br/handle/riufs/5896.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPESThe tooth replantation is considered the ideal treatment in cases of dentoalveolar trauma with avulsion. However, even respecting the optimal conditions of extra-alveolar time or storage, much of the replanted teeth is lost mainly by the occurrence of external root resorption. Thus, this study evaluated through histomorphometric analysis the effect of laser photobiomodulation (LPBM) at λ808 nm and λ660 nm and of storage media on the periodontal repair process of replanted teeth in rats. The research was conducted on the in vivo experimental study design, randomized and with simple blinding. Maxillary right incisors were extracted from sixty Wistar rats and randomly assigned to six groups (n = 10): PN, WM and SM, in which the teeth were stored in paper napkin, whole milk and soy milk, respectively, for 45 minutes; and PNL, WML and SML, in which the teeth were stored in the same storage media, but the root surface and the alveolus were treated with LPBM at λ808 nm before the replantation (GaAlAs, CW, 100 mW, 61 J/cm2) and the buccal and palatal mucosa of the alveolus with LPBM at λ660 nm after the replantation (InGaAlP, CW, 100 mW, 61 J/cm2). Five rats from each group were euthanized after 15 or 30 days. The right hemimaxilla including the replanted incisor was removed and processed for histomorphometric analysis of inflammatory root resorption areas, replacement root resorption areas, perimeter with ankylosis and periodontal repair, and areas of type I and III collagen deposition, using the ImageJ 1.50b software. Data were analyzed statistically by the ANOVA test followed by Tukey's multiple comparison test (α = 5%). All data presented normal distribution according to the Shapiro-Wilk test. WM and SM showed smaller root resorption areas and higher collagen deposition in both experimental periods and SM the greatest perimeter of repair. LPBM reduced the occurrence of root resorption only in PNL group, both in 15 and in 30 days, and increased the perimeter of periodontal repair in all groups at 30 days. There was higher collagen deposition in the irradiated groups independent of the experimental period. It was concluded that the LPBM protocol at λ808 nm and λ660 nm, as well as whole milk and soy milk favored the periodontal repair process of replanted teeth in rats.
O reimplante dental é considerado o tratamento ideal nos casos de traumatismo dentoalveolar com avulsão. No entanto, mesmo respeitando as condições ideais de tempo extra-alveolar ou de armazenamento, grande parte dos dentes reimplantados é perdida principalmente pela ocorrência de reabsorção radicular externa. Dessa forma, este trabalho avaliou, por meio de análise histomorfométrica, o efeito da fotobiomodulação a laser (FBML) de λ808 nm e λ660 nm e de meios de armazenamento no processo de reparo periodontal de reimplantes dentais em ratos. A pesquisa foi desenvolvida no modelo de estudo experimental in vivo, randomizado e com cegamento simples. Incisivos superiores direitos foram extraídos de sessenta ratos Wistar e distribuídos aleatoriamente em seis grupos (n = 10): GP, LI e LS, nos quais os dentes foram armazenados em guardanapo de papel, leite integral e leite de soja, respectivamente, por 45 minutos; e GPL, LIL e LSL, nos quais os dentes foram armazenados nos mesmos meios, mas a superfície radicular e o alvéolo foram tratados com FBML λ808 nm antes do reimplante (AsGaAl, CW, 100 mW, 61 J/cm2), e a mucosa vestibular e palatina do alvéolo com FBML λ660 nm após o reimplante (InGaAlP, CW, 100 mW, 61 J/cm2). Cinco ratos de cada grupo foram eutanasiados após 15 ou 30 dias. A hemimaxila direita incluindo o incisivo reimplantado foi removida e processada para análise histomorfométrica de áreas de reabsorção radicular, reabsorção com substituição, perímetro com anquilose e reparo periodontal, e áreas de deposição de colágeno tipo I e III, utilizando o programa ImageJ 1.50b. Os dados foram analisados estatisticamente pelo teste ANOVA seguido do teste de comparações múltiplas de Tukey (α = 5%). Todos os dados apresentaram distribuição normal segundo o teste de Shapiro-Wilk. LI e LS apresentaram menores áreas de reabsorção radicular e maior deposição de colágeno em ambos os períodos experimentais e LS o maior perímetro de reparo. A FBML reduziu a ocorrência de reabsorção radicular apenas no grupo GPL, tanto em 15 quanto em 30 dias, e aumentou o perímetro de reparo periodontal em todos os grupos em 30 dias. Houve maior deposição de colágeno nos grupos irradiados independente do período experimental. Concluiu-se que o protocolo de FBML de λ808 nm e λ660 nm, bem como leite integral e leite de soja favoreceram o processo de reparo periodontal de reimplantes dentais em ratos.
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Rabén, Hans. "Receiver Front-End Design for WiMAX/LTE in 90 nm CMOS : Receiver Front-End Design for WiMAX/LTE in 90 nm CMOS." Thesis, University of Gävle, Ämnesavdelningen för elektronik, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-5425.
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Steinbrecher, Verena. "Ex-vivo-Untersuchungen der Diodenlaser bei einer Emissionswellenlänge von λ = 980 nm und λ = 1470 nm zur Behandlung der Benignen Prostatahyperplasie (BPH)." Diss., lmu, 2011. http://nbn-resolving.de/urn:nbn:de:bvb:19-138688.
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Niederkrüger, Matthias, Christian Salb, Michael Beck, Niko Hildebrandt, Hans-Gerd Löhmannsröben, and Gerd Marowsky. "Improvement of a fluorescence immunoassay with a compact diode-pumped solid state laser at 315 nm." Universität Potsdam, 2006. http://opus.kobv.de/ubp/volltexte/2006/1015/.
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We demonstrate the improvement of fluorescence immunoassay (FIA) diagnostics in deploying a newly developed compact diode-pumped solid state (DPSS) laser with emission at 315 nm. The laser is based on the quasi-three-level transition in Nd:YAG at 946 nm. The pulsed operation is either realized by an active Q-switch using an electro-optical device or by introduction of a Cr4+:YAG saturable absorber as passive Q-switch element. By extra-cavity second harmonic generation in different nonlinear crystal media we obtained blue light at 473 nm. Subsequent mixing of the fundamental and the second harmonic in a β-barium-borate crystal provided pulsed emission at 315 nm with up to 20 μJ maximum pulse energy and 17 ns pulse duration. Substitution of a nitrogen laser in a FIA diagnostics system by the DPSS laser succeeded in considerable improvement of the detection limit. Despite significantly lower pulse energies (7 μJ DPSS laser versus 150 μJ nitrogen laser), in preliminary investigations the limit of detection was reduced by a factor of three for a typical FIA.
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Laniel, Jacques M. "Photoisomérisation dans les guides d'ondes polymères à 1550 nm." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape9/PQDD_0019/MQ47211.pdf.
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Supper, Daniel. "Neuartige hybride 1300 nm VCSEL für die optische Übertragungstechnik /." Göttingen : Cuvillier, 2008. http://d-nb.info/989509907/04.
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