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Journal articles on the topic 'Nitrogen Vacancies'

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Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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1

Kuganathan, Navaratnarajah, Robin W. Grimes, and Alexander Chroneos. "Nitrogen-vacancy defects in germanium." AIP Advances 12, no. 4 (April 1, 2022): 045110. http://dx.doi.org/10.1063/5.0080958.

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While nitrogen doping has been investigated extensively in silicon, there is only limited information on its interaction with vacancies in germanium, despite most point defect processes in germanium being vacancy controlled. Thus, spin polarized density functional theory calculations are used to examine the association of nitrogen with lattice vacancies in germanium and for comparison in silicon. The results demonstrate significant charge transfer to nitrogen from the nearest neighbor Ge and strong N–Ge bond formation. The presence of vacancies results in a change in nitrogen coordination (from tetrahedral to trigonal planar) though the total charge transfer to N is maintained. A variety of nitrogen vacancy clusters are considered, all of which demonstrated strong binding energies. Substitutional nitrogen remains an effective trap for vacancies even if it has already trapped one vacancy.
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2

Voronkov, V. V., and R. Falster. "Nitrogen interaction with vacancies in silicon." Materials Science and Engineering: B 114-115 (December 2004): 130–34. http://dx.doi.org/10.1016/j.mseb.2004.07.023.

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3

Jackson, W. E., and Steven W. Webb. "Influence of substitutional nitrogen in synthetic saw-grade diamond on crystal strength." Journal of Materials Research 12, no. 6 (June 1997): 1646–54. http://dx.doi.org/10.1557/jmr.1997.0225.

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The amount and defect type of substitutional nitrogen in synthetic diamond strongly influences crystal strength. There is an optimum amount of nitrogen that yields the highest compressive fracture strength for crystals derived from common growth conditions. It is postulated that the role of nitrogen is to charge-balance vacancies created during growth. If too little nitrogen exists in the diamond, vacancies are not charge-balanced and may serve as crack initiation and/or propagation sites. Excess nitrogen above that required to charge-balance vacancies may weaken the lattice by adding local strain to the crystal. IR microscopy indicates that most of the substitutional nitrogen in synthetic diamond is increased in the vicinity of the intersections of growth sectors on the crystal surface. Most surface IR-visible nitrogen is biased toward the (111)–(100) intersection. The bias in incorporation of substitutional nitrogen at external growth sector intersections (i.e., edges and corners) of an industrial high-grade saw diamond crystal influences the progression of fatigue by microfracture during cutting of hard stone.
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4

Wang, Jiajia, Aibin Ma, Zhaosheng Li, Jinghua Jiang, Jianyong Feng, and Zhigang Zou. "Effects of oxygen impurities and nitrogen vacancies on the surface properties of the Ta3N5photocatalyst: a DFT study." Physical Chemistry Chemical Physics 17, no. 35 (2015): 23265–72. http://dx.doi.org/10.1039/c5cp03290c.

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DFT calculations were performed to study Ta3N5(100), (010) and (001) surfaces with oxygen impurities and nitrogen vacancies. The effects of oxygen impurities and nitrogen vacancies on the surface stability and electronic structures of Ta3N5surfaces were put forward.
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5

Music, Denis, Rajeev Ahuja, and Jochen M. Schneider. "Theoretical study of nitrogen vacancies in Ti4AlN3." Applied Physics Letters 86, no. 3 (January 17, 2005): 031911. http://dx.doi.org/10.1063/1.1854744.

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6

Wang, Kaiyue, John W. Steeds, Zhihong Li, and Yuming Tian. "Photoluminescence Studies of Both the Neutral and Negatively Charged Nitrogen-Vacancy Center in Diamond." Microscopy and Microanalysis 22, no. 1 (January 13, 2016): 108–12. http://dx.doi.org/10.1017/s1431927615015500.

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AbstractIn this study low temperature micro-photoluminescence technology was employed to investigate effects of the irradiation and nitrogen concentration on nitrogen-vacancy (NV) luminescence, with the photochromic and vibronic properties of the NV defects. Results showed that the NV luminescence was weakened due to recombination of self-interstitials created by electron irradiation in diamond and the vacancies within the structure of NV centers. For very pure diamond, the vacancies migrated the long distance to get trapped by N atoms only after sufficient high temperature annealing. As with the increase in nitrogen content, the migration distance of vacancies got smaller. The nitrogen also favored the formation of negatively charged NV centers with the donating electrons. Under the high-energy ultraviolet laser excitation, the photochromic property of the NV− center was also observed, though it was not stable. Besides, the NV centers showed very strong broad sidebands, and the vibrations involved one phonon with energy of ~42 meV and another with ~67 meV energy.
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7

Mrózek, Mariusz, Mateusz Schabikowski, Marzena Mitura-Nowak, Janusz Lekki, Marta Marszałek, Adam M. Wojciechowski, and Wojciech Gawlik. "Nitrogen-Vacancy Color Centers Created by Proton Implantation in a Diamond." Materials 14, no. 4 (February 9, 2021): 833. http://dx.doi.org/10.3390/ma14040833.

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We present an experimental study of the longitudinal and transverse relaxation of ensembles of negatively charged nitrogen-vacancy (NV−) centers in a diamond monocrystal prepared by 1.8 MeV proton implantation. The focused proton beam was used to introduce vacancies at a 20 µµm depth layer. Applied doses were in the range of 1.5×1013 to 1.5×1017 ions/cm2. The samples were subsequently annealed in vacuum which resulted in a migration of vacancies and their association with the nitrogen present in the diamond matrix. The proton implantation technique proved versatile to control production of nitrogen-vacancy color centers in thin films.
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8

Priem, T., B. Beuneu, C. H. de Novion, R. Caudron, F. Solal, and A. N. Christensen. "() versus () type ordering of nitrogen vacancies in TiNx." Solid State Communications 63, no. 10 (September 1987): 929–32. http://dx.doi.org/10.1016/0038-1098(87)90342-5.

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9

Ali, T., C. Rupprecht, R. T. Khan, E. Bauer, G. Hilscher, and H. Michor. "The effect of nitrogen vacancies in La3Ni2B2N3−δ." Journal of Physics: Conference Series 200, no. 1 (January 1, 2010): 012004. http://dx.doi.org/10.1088/1742-6596/200/1/012004.

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10

Cheng, Yi-Bing, and Derek P. Thompson. "Role of Anion Vacancies in Nitrogen-Stabilized Zirconia." Journal of the American Ceramic Society 76, no. 3 (March 1993): 683–88. http://dx.doi.org/10.1111/j.1151-2916.1993.tb03660.x.

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11

Ikeda, Akihiro, Daichi Marui, Hiroshi Ikenoue, and Tanemasa Asano. "Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser." Materials Science Forum 821-823 (June 2015): 448–51. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.448.

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We report nitrogen (N) doping of 4H-SiC by KrF excimer laser irradiation in liquid N2. In comparison to phosphorus (P) doping performed using phosphoric acid solution, the liquid-N2 immersion-laser doping can introduce N atoms deeper (~ 1 μm depth) into the 4H-SiC, which results in reduction of doped layer resistance by approximately 3 orders of magnitude. Doping is shown to proceed by the thermal diffusion of species, while loss of the host material from the surface by ablation takes place at the same time. Chemical analysis shows that high density carbon (C) vacancies are generated in the N doped region, which suggests enhanced diffusion of N assisted by the presence of C vacancies. pn junction diodes are formed by using the N doping technique. Turn-on voltage is ~ -3V, which is reasonable for a pn junction diode of 4H-SiC.
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12

Abe, Takao. "Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers." Materials Science Forum 725 (July 2012): 193–98. http://dx.doi.org/10.4028/www.scientific.net/msf.725.193.

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Using the peculiar behavior of nitrogen molecules in FZ silicon crystals contained with a high concentration of vacancies, this paper describes the following four important values: the estimated vacancy concentrations, the deep levels at 0.44 eV under the conduction band for n-type and at 0.66 eV over the valence band for p-type for mono vacancies and the diffusion coefficient of the silicon interstitials DI-FZ = 1.3×exp(-4.5 eV/kT).
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13

Esrafili, Mehdi D., Nasibeh Saeidi, and Parisa Nematollahi. "The healing of B- or N-vacancy defective BNNTs by using CO molecule: a DFT study." New Journal of Chemistry 40, no. 9 (2016): 8024–31. http://dx.doi.org/10.1039/c6nj00921b.

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14

Ning, Pei, Huayu Chen, Jianhui Pan, Junhui Liang, Laishun Qin, Da Chen, and Yuexiang Huang. "Surface defect-rich g-C3N4/TiO2 Z-scheme heterojunction for efficient photocatalytic antibiotic removal: rational regulation of free radicals and photocatalytic mechanism." Catalysis Science & Technology 10, no. 24 (2020): 8295–304. http://dx.doi.org/10.1039/d0cy01564d.

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Surface defect engineering was employed to introduce two different surface defect structures (i.e., nitrogen vacancies on g-C3N4 and oxygen vacancies on TiO2) on the surface of g-C3N4/TiO2 for efficient photocatalytic antibiotic removal.
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15

Zhai, Huanhuan, Pengfei Tan, Lili Lu, Hongqin Liu, Yong Liu, and Jun Pan. "Abundant hydroxyl groups decorated on nitrogen vacancy-embedded g-C3N4 with efficient photocatalytic hydrogen evolution performance." Catalysis Science & Technology 11, no. 11 (2021): 3914–24. http://dx.doi.org/10.1039/d1cy00359c.

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Engineering hydroxyl and N vacancies on g-C3N4 led to dual mitigation of the recombination rate of photogenerated carriers, which was achieved by enriched hydroxyl groups trapping the holes and stable N vacancies capturing the electrons.
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16

Cao, Yuhui, Shaozheng Hu, Fayun Li, Zhiping Fan, Jin Bai, Guang Lu, and Qiong Wang. "Photofixation of atmospheric nitrogen to ammonia with a novel ternary metal sulfide catalyst under visible light." RSC Advances 6, no. 55 (2016): 49862–67. http://dx.doi.org/10.1039/c6ra08247e.

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The NH4+ generation rate over ternary metal sulfide catalysts are linearly related to the sulfur vacancies concentration, confirming the photofixation capacity of N2 over ternary metal sulfide are dependent on the amount of sulfur vacancies.
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17

Wu, Hsuan-Chung, Yu-Siang Lin, and Syuan-Wei Lin. "Mechanisms of Visible Light Photocatalysis in N-Doped Anatase TiO2with Oxygen Vacancies from GGA+U Calculations." International Journal of Photoenergy 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/289328.

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We have systematically studied the photocatalytic mechanisms of nitrogen doping in anatase TiO2using first-principles calculations based on density functional theory, employing HubbardU(8.47 eV) on-site correction. The impurity formation energy, charge density, and electronic structure properties of TiO2supercells containing substitutional nitrogen, interstitial nitrogen, or oxygen vacancies were evaluated to clarify the mechanisms under visible light. According to the formation energy, a substitutional N atom is better formed than an interstitial N atom, and the formation of an oxygen vacancy in N-doped TiO2is easier than that in pure TiO2. The calculated results have shown that a significant band gap narrowing may only occur in heavy nitrogen doping. With light nitrogen doping, the photocatalysis under visible light relies on N-isolated impurity states. Oxygen vacancies existence in N-doped TiO2can improve the photocatalysis in visible light because of a band gap narrowing and n-type donor states. These findings provide a reasonable explanation of the mechanisms of visible light photocatalysis in N-doped TiO2.
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18

Liu, Yunliang, Peiji Deng, Ruqiang Wu, Xiaoli Zhang, Chenghua Sun, and Haitao Li. "Oxygen vacancies for promoting the electrochemical nitrogen reduction reaction." Journal of Materials Chemistry A 9, no. 11 (2021): 6694–709. http://dx.doi.org/10.1039/d0ta11522c.

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Recent advances on the detection, preparation and application of oxygen vacancies (OVs) for the electro-nitrogen fixation process with a focus on the generating strategies of OVs, evaluation method and their role in NRR.
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19

Zhou, Jian Ge, and Quinton L. Williams. "Hydrogen Storage on Platinum-Decorated Carbon Nanotubes with Boron, Nitrogen Dopants or Sidewall Vacancies." Journal of Nano Research 15 (September 2011): 29–40. http://dx.doi.org/10.4028/www.scientific.net/jnanor.15.29.

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The interaction between hydrogen molecules and platinum (Pt)-decorated carbon nanotubes (CNTs) with boron (B)-, nitrogen (N)-dopants or sidewall vacancies is discussed from first-principle calculations. The adsorption patterns of hydrogen molecules on four types of Pt-decorated CNTs are investigated, and the partial density of states projected on the Pt atom is computed to reveal the response to the number of hydrogen molecules, dopants or vacancies. It is found that the B-, N-dopants or sidewall vacancies can adjust the binding energy between the hydrogen molecules and the Pt atom deposited on the defective CNT, while not reducing the maximum number of hydrogen molecules that are chemically adsorbed on the Pt atom. It is demonstrated that the binding energy of the first H2 and the Pt atom on the pristine CNT or the CNT with the B-, N-dopants is quite strong, so each Pt atom in these three cases can only release the second H2 under ambient conditions. However, when the Pt atom is deposited on the CNT with sidewall vacancies, it can adsorb and desorb two hydrogen molecules under ambient conditions.
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20

Tyunina, M., O. Pacherova, N. Nepomniashchaia, V. Vetokhina, S. Cichon, T. Kocourek, and A. Dejneka. "In situ anion-doped epitaxial strontium titanate films." Physical Chemistry Chemical Physics 22, no. 42 (2020): 24796–800. http://dx.doi.org/10.1039/d0cp03644g.

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21

Majid, Abdul, Mehreen Javed, Usman Ali Rana, and Salah Ud-Din Khan. "TiGa–VN complexes in GaN: a new prospect of carrier mediated ferromagnetism." RSC Advances 5, no. 106 (2015): 87437–44. http://dx.doi.org/10.1039/c5ra14476k.

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22

Wan, Zhonghao, Zibo Xu, Yuqing Sun, Mingjing He, Deyi Hou, Xinde Cao, and Daniel C. W. Tsang. "Critical Impact of Nitrogen Vacancies in Nonradical Carbocatalysis on Nitrogen-Doped Graphitic Biochar." Environmental Science & Technology 55, no. 10 (April 29, 2021): 7004–14. http://dx.doi.org/10.1021/acs.est.0c08531.

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23

Liu, Xun, Binghua Jing, Ganquan Lun, Yingfei Wang, Xiaodan Wang, Chihhsiang Fang, Zhimin Ao, and Chuanhao Li. "Integrating nitrogen vacancies into crystalline graphitic carbon nitride for enhanced photocatalytic hydrogen production." Chemical Communications 56, no. 21 (2020): 3179–82. http://dx.doi.org/10.1039/d0cc00280a.

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24

Bockstedte, M., Alexander Mattausch, and Oleg Pankratov. "Kinetic Mechanisms for the Deactivation of Nitrogen in SiC." Materials Science Forum 527-529 (October 2006): 621–24. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.621.

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Kinetic mechanisms for the deactivation of nitrogen are investigated by ab initio theory. We find that the interaction of nitrogen with self-interstitials can lead to a deactivation of nitrogen, yet it cannot explain the experimentally observed nitrogen deactivation at high temperatures in silicon co-implanted samples. Our analysis suggests the aggregation of vacancies at high temperatures and the subsequent formation of passive nitrogen-vacancy complexes as a likely explanation.
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25

Li, Junyi, Xiaohan Wang, Liang Huang, Liang Tian, Menny Shalom, Chunyan Xiong, Haijun Zhang, Quanli Jia, Shaowei Zhang, and Feng Liang. "Ultrathin mesoporous graphitic carbon nitride nanosheets with functional cyano group decoration and nitrogen-vacancy defects for an efficient selective CO2 photoreduction." Nanoscale 13, no. 29 (2021): 12634–41. http://dx.doi.org/10.1039/d1nr02639a.

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26

Yang, Zhidong, Ya Zhang, Hongxia Zhang, Jianghong Zhao, Hu Shi, Ming Zhang, Hengquan Yang, Zhanfeng Zheng, and Pengju Yang. "Nitrogen vacancies in polymeric carbon nitrides promote CO2 photoreduction." Journal of Catalysis 409 (May 2022): 12–23. http://dx.doi.org/10.1016/j.jcat.2022.03.016.

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27

Chang, Shery L. Y., Amanda S. Barnard, Christian Dwyer, Chris B. Boothroyd, Rosalie K. Hocking, Eiji Ōsawa, and Rebecca J. Nicholls. "Counting vacancies and nitrogen-vacancy centers in detonation nanodiamond." Nanoscale 8, no. 20 (2016): 10548–52. http://dx.doi.org/10.1039/c6nr01888b.

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28

Slotte, J., K. Saarinen, E. M. Pavelescu, T. Hakkarainen, and M. Pessa. "Nitrogen related vacancies in GaAs based quantum well superlattices." Applied Physics Letters 89, no. 6 (August 7, 2006): 061903. http://dx.doi.org/10.1063/1.2335402.

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29

Majid, Abdul, Farzana Asghar, Usman Ali Rana, Salah Ud-Din Khan, Masato Yoshiya, Fayyaz Hussain, and Iftikhar Ahmad. "Role of nitrogen vacancies in cerium doped aluminum nitride." Journal of Magnetism and Magnetic Materials 412 (August 2016): 49–54. http://dx.doi.org/10.1016/j.jmmm.2016.03.065.

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30

Hautakangas, S., V. Ranki, I. Makkonen, M. J. Puska, K. Saarinen, L. Liszkay, D. Seghier, et al. "Gallium and nitrogen vacancies in GaN: Impurity decoration effects." Physica B: Condensed Matter 376-377 (April 2006): 424–27. http://dx.doi.org/10.1016/j.physb.2005.12.109.

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31

Huang, Ting, Shugang Pan, Lingling Shi, Aiping Yu, Xin Wang, and Yongsheng Fu. "Hollow porous prismatic graphitic carbon nitride with nitrogen vacancies and oxygen doping: a high-performance visible light-driven catalyst for nitrogen fixation." Nanoscale 12, no. 3 (2020): 1833–41. http://dx.doi.org/10.1039/c9nr08705b.

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Hollow porous prismatic graphitic carbon nitride with nitrogen vacancies and oxygen doping was successfully constructed via a facile two-step strategy of a low-temperature hydrothermal method followed by a subsequent calcination process.
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32

Schlexer, Philomena, Antonio Ruiz Puigdollers, and Gianfranco Pacchioni. "Tuning the charge state of Ag and Au atoms and clusters deposited on oxide surfaces by doping: a DFT study of the adsorption properties of nitrogen- and niobium-doped TiO2 and ZrO2." Physical Chemistry Chemical Physics 17, no. 34 (2015): 22342–60. http://dx.doi.org/10.1039/c5cp03834k.

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33

Wang, Libo, Mohan Li, Shiyu Wang, Tingting Zhang, Fengyan Li, and Lin Xu. "Enhanced photocatalytic nitrogen fixation in BiVO4: constructing oxygen vacancies and promoting electron transfer through Ohmic contact." New Journal of Chemistry 45, no. 47 (2021): 22234–42. http://dx.doi.org/10.1039/d1nj04580f.

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The Ag nanoparticles deposited on the surface of BiVO4 containing oxygen vacancies are employed in photocatalytic N2 fixation. The NH3 generation rate is enhanced by constructing abundant oxygen vacancies and promoting electron transfer by Ohmic contact.
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34

Osthues, Helena, Christian Schwermann, Johann A. Preuß, Thorsten Deilmann, Rudolf Bratschitsch, Michael Rohlfing, and Nikos L. Doltsinis. "Covalent photofunctionalization and electronic repair of 2H-MoS2via nitrogen incorporation." Physical Chemistry Chemical Physics 23, no. 34 (2021): 18517–24. http://dx.doi.org/10.1039/d1cp02313f.

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Ab initio calculations are used to study defect-free attachment of functional molecules via nitrogen incorporation at sulfur vacancies. This approach allows for stable modification while keeping the extraordinary properties of MoS2 monolayers.
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35

Wang, Chong-Min, Xiao-Qing Pan, and Manfred Rühle. "Origin of dislocation loops in α-silicon nitride." Journal of Materials Research 11, no. 7 (July 1996): 1725–32. http://dx.doi.org/10.1557/jmr.1996.0216.

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Dislocation loops and stacking fault formation mechanism in α–Si3N4 have been studied by annealing α–Si3N4 powders at 1500 °C and 1750 °C. Thermally activated vacancies and the structural vacancies generated with replacement of nitrogen by oxygen have been tentatively suggested to be two sources of vacancies in α–Si3N4. From the point of view of mechanism, incorporation of these vacancies is believed to lie at the building-up stage of α–Si3N4 lattice. As a result of the vacancies agglomeration, dislocation loops and stacking faults seem to be a distinctively structural feature of α–Si3N4 fabricated by different routes [chemical vapor deposition (CVD), silicon nitridation, silica carbothermal reduction, and imide decomposition]. A general discussion has been extended to the historical controversy over the oxygen and vacancy stabilization of α–Si3N4 lattice arisen from the fact that the observed unit cell dimension of α–Si3N4 has a wide variation, and also to some related phenomena in processing of Si3N4.
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36

Shuaib, M., and D. A. Hall. "Influence of Atmospheric Annealing on the Conductivity of Mn-Doped PZT Ceramics." Key Engineering Materials 442 (June 2010): 415–21. http://dx.doi.org/10.4028/www.scientific.net/kem.442.415.

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Conductivity measurements were carried out on Mn-doped PZT ceramics in order to investigate the changes in defect chemistry with annealing, by identifying the charge carriers such as lead or oxygen vacancies. PZT compositions were prepared by sol-gel method in rhombohedral region Pb(Zr0.56 Ti0.44)O3 with Mn contents 0.4, 0.8, 1.5 and 2 wt.%. Nano-sized powder (~21nm) was obtained after calcination and bulk density values of >98% were achieved upon sintering. It was found that nitrogen annealing reduced the electrical conductivity strongly as compared to oxygen and air annealing and the possible charge carriers were single ionised oxygen vacancies along with and vacancies.
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37

He, Zhiyi, Yu Wang, Xiaoli Dong, Nan Zheng, Hongchao Ma, and Xiufang Zhang. "Indium sulfide nanotubes with sulfur vacancies as an efficient photocatalyst for nitrogen fixation." RSC Advances 9, no. 38 (2019): 21646–52. http://dx.doi.org/10.1039/c9ra03507a.

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38

Wang, Xue Lu, Wen Qi Fang, Yefeng Yao, Porun Liu, Yun Wang, Haimin Zhang, Huijun Zhao, and Hua Gui Yang. "Switching the photocatalytic activity of g-C3N4 by homogenous surface chemical modification with nitrogen residues and vacancies." RSC Advances 5, no. 27 (2015): 21430–33. http://dx.doi.org/10.1039/c5ra00150a.

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39

Wu, Hao, Hao Jiang, Yongqiang Yang, Chenyi Hou, Haitao Zhao, Ru Xiao, and Hongzhi Wang. "Cobalt nitride nanoparticle coated hollow carbon spheres with nitrogen vacancies as an electrocatalyst for lithium–sulfur batteries." Journal of Materials Chemistry A 8, no. 29 (2020): 14498–505. http://dx.doi.org/10.1039/d0ta05249c.

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40

Yan, Bo, Chun Du, Zhaoyong Lin, and Guowei Yang. "Photothermal conversion assisted photocatalytic hydrogen evolution from amorphous carbon nitrogen nanosheets with nitrogen vacancies." Physical Chemistry Chemical Physics 22, no. 8 (2020): 4453–63. http://dx.doi.org/10.1039/d0cp00132e.

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Photothermal conversion can accelerate the drift velocity of photo-induced carriers, and increase the carrier concentration. It suggests that photothermal conversion can greatly promotes photocatalytic hydrogen production.
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41

Bao, Liang, Yong-jun Yuan, Huaiwei Zhang, Xuefeng Zhang, and Gang Xu. "Understanding the hierarchical behavior of Bi2WO6 with enhanced photocatalytic nitrogen fixation activity." Dalton Transactions 50, no. 21 (2021): 7427–32. http://dx.doi.org/10.1039/d1dt00762a.

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The hierarchical Bi2WO6 nanostructures exhibit an excellent photocatalytic nitrogen fixation rate due to chemisorption on the hierarchical structures and enhanced surface oxygen vacancies (OVs).
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42

Fang, Li Jun, Xue Lu Wang, Jun Jie Zhao, Yu Hang Li, Yu Lei Wang, Xu Lei Du, Zhi Fei He, Hui Dan Zeng, and Hua Gui Yang. "One-step fabrication of porous oxygen-doped g-C3N4 with feeble nitrogen vacancies for enhanced photocatalytic performance." Chemical Communications 52, no. 100 (2016): 14408–11. http://dx.doi.org/10.1039/c6cc08187h.

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43

Lu, Hsiao-Chi, Jen-Iu Lo, Yu-Chain Peng, and Bing-Ming Cheng. "Photoluminescence of diamond containing nitrogen vacancy defects as a sensor of temperature upon exposure to vacuum- and extreme-ultraviolet radiation." Physical Chemistry Chemical Physics 22, no. 46 (2020): 26982–86. http://dx.doi.org/10.1039/d0cp05304j.

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Upon excitation with vacuum-ultraviolet (VUV) and extreme-ultraviolet (EUV) radiation, diamond with nitrogen vacancies (DNV) emits strong photoluminescence (PL) in the wavelength region of 550–800 nm.
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44

Qu, Di, Xianyun Peng, Yuying Mi, Haihong Bao, Shunzheng Zhao, Xijun Liu, and Jun Luo. "Nitrogen doping and titanium vacancies synergistically promote CO2 fixation in seawater." Nanoscale 12, no. 33 (2020): 17191–95. http://dx.doi.org/10.1039/d0nr03775c.

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45

Shirzadi Jahromi, Hassan, Fatemeh Mehdipour, and Ghasem Firoozi. "Fracture Analysis of Vacancy Defected Nitrogen Doped Graphene Sheets Via MD Simulations." Mapta Journal of Mechanical and Industrial Engineering (MJMIE) 5, no. 1 (May 1, 2021): 18–23. http://dx.doi.org/10.33544/mjmie.v5i1.168.

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The novel hexagonal monolayer sheet of carbon atoms, graphene, has attracted great attention due to their exceptional electrical and mechanical properties. Their phenomenally high strength and elastic strain, nevertheless, can be altered by structural defects due to stress concentration. In this paper, the fracture behaviour of graphene sheets and nitrogen doped graphene sheets with vacancies were investigated using molecular dynamics (MD) simulations at the different temperatures of 300K, 500K, and 900K. The results reveal a significant strength loss caused by both the defects and vacancies and doped nitrogen in graphene. The deformation process of graphene at various strain rate levels, with regard to the failure behaviour, is discussed. The validity of the proposed MD simulations is verified by comparing the simulation results with the available predictions from the quantized fracture mechanics.
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46

Zhang, Qian, Shaozheng Hu, Zhiping Fan, Daosheng Liu, Yanfeng Zhao, Hongfei Ma, and Fayun Li. "Preparation of g-C3N4/ZnMoCdS hybrid heterojunction catalyst with outstanding nitrogen photofixation performance under visible light via hydrothermal post-treatment." Dalton Transactions 45, no. 8 (2016): 3497–505. http://dx.doi.org/10.1039/c5dt04901f.

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47

Wu, Naiteng, Wuzhou Du, Xu Gao, Liang Zhao, Guilong Liu, Xianming Liu, Hao Wu, and Yan-Bing He. "Hollow SnO2 nanospheres with oxygen vacancies entrapped by a N-doped graphene network as robust anode materials for lithium-ion batteries." Nanoscale 10, no. 24 (2018): 11460–66. http://dx.doi.org/10.1039/c8nr02290a.

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48

Dragoman, Mircea, Silviu Vulpe, Elias Aperathithis, Chrysa Aivalioti, Cosmin Romanitan, Adrian Dinescu, Daniela Dragoman, et al. "Oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide." Journal of Applied Physics 131, no. 16 (April 28, 2022): 164304. http://dx.doi.org/10.1063/5.0075568.

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This paper reports the onset of ferroelectricity in NiO by breaking the crystallographic symmetry with oxygen vacancies created by N doping. Nitrogen-doped NiO was grown at room temperature by RF sputtering of Ni target in Ar–O2–N2 plasma on silicon and fused silica substrates. The impact of the nitrogen doping of NiO on microstructural, optical, and electrical properties has been investigated. According to x-ray diffraction investigations, by increasing the N doping level in NiO, a transition from (002) to a (111) preferential orientation for the cubic NiO phase was observed, as well as a lattice strain relaxation, that is usually ascribed to structural defect formation in crystal. The x-ray diffraction pole figures the presence of a distorted cubic structure in NiO and supports the Rietveld refinement findings related to the strain, which pointed out that nitrogen doping fosters lattice imperfections formation. These findings were found to be in agreement with our far-infrared measurements that revealed that upon nitrogen doping a structural distortion of the NiO cubic phase appears. X-ray photoemission spectroscopy measurements reveal the presence of oxygen vacancies in the NiO film following nitrogen doping. Evidence of ferroelectricity in nitrogen-doped NiO thin films has been provided by using the well-established Sawyer–Tower method. The results reported here provide the first insights on oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide thin films.
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Cui, Liang, Menglu Wang, and Yuan Xu Wang. "Nitrogen Vacancies and Oxygen Substitution of Ta3N5: First-Principles Investigation." Journal of the Physical Society of Japan 83, no. 11 (November 15, 2014): 114707. http://dx.doi.org/10.7566/jpsj.83.114707.

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Holmes-Hewett, W. F., C. Pot, R. G. Buckley, A. Koo, B. J. Ruck, F. Natali, A. Shaib, J. D. Miller, and H. J. Trodahl. "Nitrogen vacancies and carrier-concentration control in rare-earth nitrides." Applied Physics Letters 117, no. 22 (November 30, 2020): 222409. http://dx.doi.org/10.1063/5.0034031.

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