Journal articles on the topic 'Nitrides of the III group'
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Christen, Jürgen, and Bernard Gil. "Group III Nitrides." physica status solidi (c) 11, no. 2 (February 2014): 238. http://dx.doi.org/10.1002/pssc.201470041.
Full textHenini, M. "Properties group III nitrides." III-Vs Review 8, no. 2 (April 1995): 67. http://dx.doi.org/10.1016/0961-1290(95)80114-6.
Full textPloog, Klaus H., and Oliver Brandt. "Doping of group III nitrides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, no. 3 (May 1998): 1609–14. http://dx.doi.org/10.1116/1.581128.
Full textSzweda, Roy. "Properties of group III nitrides." III-Vs Review 10, no. 4 (July 1997): 54. http://dx.doi.org/10.1016/0961-1290(97)90252-0.
Full textHenini, M. "Properties of Group III nitrides." Microelectronics Journal 26, no. 2-3 (March 1995): xxix—xxx. http://dx.doi.org/10.1016/0026-2692(95)90023-3.
Full textCostales, Aurora, Miguel A. Blanco, Ángel Martín Pendás, Anil K. Kandalam, and Ravindra Pandey. "Chemical Bonding in Group III Nitrides." Journal of the American Chemical Society 124, no. 15 (April 2002): 4116–23. http://dx.doi.org/10.1021/ja017380o.
Full textSussek, Harald, Oliver Stark, Anjana Devi, Hans Pritzkow, and Roland A. Fischer. "Precursor chemistry of Group III nitrides." Journal of Organometallic Chemistry 602, no. 1-2 (May 2000): 29–36. http://dx.doi.org/10.1016/s0022-328x(00)00114-5.
Full textWang, Liangbiao, Yanxia Pan, Qianli Shen, Junhao Zhang, Keyan Bao, Zhengsong Lou, Dejian Zhao, and Quanfa Zhou. "Sulfur-assisted synthesis of indium nitride nanoplates from indium oxide." RSC Advances 6, no. 100 (2016): 98153–56. http://dx.doi.org/10.1039/c6ra22471g.
Full textChandrasekhar, D., D. J. Smith, S. Strite, M. E. Lin, and H. Morkoc. "Characterization of group Ill-nitrides by high-resolution electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 846–47. http://dx.doi.org/10.1017/s0424820100171961.
Full textGavrilenko, V. I., and R. Q. Wu. "Energy loss spectra of group III nitrides." Applied Physics Letters 77, no. 19 (November 6, 2000): 3042–44. http://dx.doi.org/10.1063/1.1323992.
Full textAmbacher, O. "Growth and applications of Group III-nitrides." Journal of Physics D: Applied Physics 31, no. 20 (October 21, 1998): 2653–710. http://dx.doi.org/10.1088/0022-3727/31/20/001.
Full textWiniarski, Maciej J. "Electronic Structure of Ternary Alloys of Group III and Rare Earth Nitrides." Materials 14, no. 15 (July 23, 2021): 4115. http://dx.doi.org/10.3390/ma14154115.
Full textAdesida, I., C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, and G. Bulman*. "Dry and Wet Etching for Group III – Nitrides." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 38–48. http://dx.doi.org/10.1557/s1092578300002222.
Full textAveryanova, M. V., I. N. Przhevalskii, S. Yu Karpov, Yu N. Makarov, M. S. Ramm, and R. A. Talalaev. "Analysis of vaporization kinetics of group-III nitrides." Materials Science and Engineering: B 43, no. 1-3 (January 1997): 167–71. http://dx.doi.org/10.1016/s0921-5107(96)01856-9.
Full textMeyer, B. K., D. M. Hofmann, and H. Alves. "Defects and defect identification in group III-nitrides." Materials Science and Engineering: B 71, no. 1-3 (February 2000): 69–76. http://dx.doi.org/10.1016/s0921-5107(99)00351-7.
Full textChow, W. W., A. Knorr, and S. W. Koch. "Theory of laser gain in group‐III nitrides." Applied Physics Letters 67, no. 6 (August 7, 1995): 754–56. http://dx.doi.org/10.1063/1.115215.
Full textKirste, Ronny, Stefan Mohn, Markus R. Wagner, Juan S. Reparaz, and Axel Hoffmann. "Phonon plasmon interaction in ternary group-III-nitrides." Applied Physics Letters 101, no. 4 (July 23, 2012): 041909. http://dx.doi.org/10.1063/1.4739415.
Full textCostales, Aurora, Miguel A. Blanco, Angel Martin Pendas, Anil K. Kandalam, and Ravindra Pandey. "ChemInform Abstract: Chemical Bonding in Group III Nitrides." ChemInform 33, no. 24 (June 8, 2010): no. http://dx.doi.org/10.1002/chin.200224002.
Full textAmano, Hiroshi, T. Takeuchi, Hiroshi Sakai, S. Yamaguchi, C. Wetzel, and Isamu Akasaki. "Heteroepitaxy of Group III Nitrides for Device Applications." Materials Science Forum 264-268 (February 1998): 1115–20. http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1115.
Full textVogel, Dirk, Peter Krüger, and Johannes Pollmann. "Structural and electronic properties of group-III nitrides." Physical Review B 55, no. 19 (May 15, 1997): 12836–39. http://dx.doi.org/10.1103/physrevb.55.12836.
Full textZięborak-Tomaszkiewicz, Iwona, and P. Gierycz. "Calculations of thermal functions of group-III nitrides." Journal of Thermal Analysis and Calorimetry 93, no. 3 (September 2008): 693–99. http://dx.doi.org/10.1007/s10973-008-9130-z.
Full textFoxon, C. T., T. S. Cheng, S. V. Novikov, D. E. Lacklison, L. C. Jenkins, D. Johnston, J. W. Orton, et al. "The growth and properties of group III nitrides." Journal of Crystal Growth 150 (May 1995): 892–96. http://dx.doi.org/10.1016/0022-0248(95)80068-n.
Full textRebane, Y. T., R. I. Gorbunov, and Y. G. Shreter. "Light scattering by dislocations in group-III nitrides." physica status solidi (a) 202, no. 15 (November 7, 2005): 2880–87. http://dx.doi.org/10.1002/pssa.200421095.
Full textAmano, H., M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, and I. Akasaki. "Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 870–77. http://dx.doi.org/10.1557/s1092578300003550.
Full textMAHMOOD, A., L. E. SANSORES, and J. HEIRAS. "BULK MODULUS CALCULATIONS FOR GROUP-IV CARBIDES AND GROUP-III NITRIDES." Modern Physics Letters B 18, no. 24 (October 20, 2004): 1247–54. http://dx.doi.org/10.1142/s0217984904007736.
Full textAs, Donat J., S. Potthast, J. Schörmann, S. F. Li, K. Lischka, Hiroyuki Nagasawa, and Masayuki Abe. "Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates." Materials Science Forum 527-529 (October 2006): 1489–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1489.
Full textDovidenko, K., S. Oktyabrsky, J. Narayan, and M. Razeghi. "Study of Thin films Polarity of Group III Nitrides." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 727–32. http://dx.doi.org/10.1557/s109257830000332x.
Full textRupp, T., G. Henn, M. Gross, and H. Schröder. "Laser-induced molecular beam epitaxy of group-III nitrides." Applied Physics A: Materials Science & Processing 69, no. 7 (December 1, 1999): S799—S802. http://dx.doi.org/10.1007/s003390051533.
Full textNeugebauer, J., T. Zywietz, M. Scheffler, and J. Northrup. "Theory of surfaces and interfaces of group III-nitrides." Applied Surface Science 159-160 (June 2000): 355–59. http://dx.doi.org/10.1016/s0169-4332(00)00154-9.
Full textFoxon, C. T. "Molecular beam epitaxy growth kinetics for group III nitrides." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 3 (May 1996): 2346. http://dx.doi.org/10.1116/1.588857.
Full textChisholm, J. A., D. W. Lewis, and P. D. Bristowe. "Classical simulations of the properties of group-III nitrides." Journal of Physics: Condensed Matter 11, no. 22 (January 1, 1999): L235—L239. http://dx.doi.org/10.1088/0953-8984/11/22/102.
Full textOkamoto, Yasuharu. "Theoretical study on the precursors of group-III nitrides." Journal of Crystal Growth 191, no. 3 (July 1998): 405–12. http://dx.doi.org/10.1016/s0022-0248(98)00160-2.
Full textSrivastava, G. P. "The anharmonic phonon decay rate in group-III nitrides." Journal of Physics: Condensed Matter 21, no. 17 (April 1, 2009): 174205. http://dx.doi.org/10.1088/0953-8984/21/17/174205.
Full textGetman, Thomas D., and Gary W. Franklin. "Single Source Precursors to Group III (13) Metal Nitrides." Comments on Inorganic Chemistry 17, no. 2 (March 1995): 79–94. http://dx.doi.org/10.1080/02603599508035783.
Full textMeyer, B. K. "ChemInform Abstract: Magnetic Resonance Investigations on Group III Nitrides." ChemInform 30, no. 18 (June 16, 2010): no. http://dx.doi.org/10.1002/chin.199918247.
Full textAs, D. J., and K. Lischka. "Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides." physica status solidi (a) 176, no. 1 (November 1999): 475–85. http://dx.doi.org/10.1002/(sici)1521-396x(199911)176:1<475::aid-pssa475>3.0.co;2-6.
Full textFoxon, C. T., C. S. Davis, S. V. Novikov, O. H. Hughes, T. S. Cheng, D. Korakakis, N. J. Jeffs, I. Grzegory, and S. Porowski. "RHEED Studies of Group III-Nitrides Grown by MBE." physica status solidi (a) 176, no. 1 (November 1999): 723–26. http://dx.doi.org/10.1002/(sici)1521-396x(199911)176:1<723::aid-pssa723>3.0.co;2-m.
Full textTalwar, D. N. "Pressure dependent phonon properties of cubic group III-nitrides." physica status solidi (b) 235, no. 2 (February 2003): 254–59. http://dx.doi.org/10.1002/pssb.200301565.
Full textAleksandrov, S. B., D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu V. Pogorel’skii, et al. "Microwave field-effect transistors based on group-III nitrides." Semiconductors 38, no. 10 (October 2004): 1235–39. http://dx.doi.org/10.1134/1.1808836.
Full textKIM, K. W., V. A. KOCHELAP, V. N. SOKOLOV, and S. M. KOMIRENKO. "QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP III-NITRIDES." International Journal of High Speed Electronics and Systems 14, no. 01 (March 2004): 127–54. http://dx.doi.org/10.1142/s0129156404002272.
Full textGavrilenko, V. I., and R. Q. Wu. "Linear and nonlinear optical properties of group-III nitrides." Physical Review B 61, no. 4 (January 15, 2000): 2632–42. http://dx.doi.org/10.1103/physrevb.61.2632.
Full textJancu, J. M., F. Bassani, F. Della Sala, and R. Scholz. "Transferable tight-binding parametrization for the group-III nitrides." Applied Physics Letters 81, no. 25 (December 16, 2002): 4838–40. http://dx.doi.org/10.1063/1.1529312.
Full textGraf, T., M. Gjukic, M. S. Brandt, M. Stutzmann, and O. Ambacher. "The Mn3+/2+ acceptor level in group III nitrides." Applied Physics Letters 81, no. 27 (December 30, 2002): 5159–61. http://dx.doi.org/10.1063/1.1530374.
Full textMackenzie, J. D., C. R. Abernathy, J. D. Stewart, and G. T. Muhr. "Growth of Group III nitrides by chemical beam epitaxy." Journal of Crystal Growth 164, no. 1-4 (July 1996): 143–48. http://dx.doi.org/10.1016/0022-0248(96)00025-5.
Full textLiday, Jozef, Gernod Ecke, Tim Baumann, Peter Vogrinčič, and Juraj Breza. "Contribution to the Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Spectroscopy." Journal of Electrical Engineering 61, no. 1 (January 1, 2010): 62–64. http://dx.doi.org/10.2478/v10187-010-0009-4.
Full textNakano, Takayuki, Masateru Hamada, and Shunro Fuke. "Fabrication and Performance of Photocatalytic GaN Powders." Advanced Materials Research 222 (April 2011): 142–45. http://dx.doi.org/10.4028/www.scientific.net/amr.222.142.
Full textCimalla, Volker, C. C. Röhlig, V. Lebedev, Oliver Ambacher, Katja Tonisch, Florentina Niebelschütz, Klemens Brueckner, and Matthias A. Hein. "AlGaN/GaN Based Heterostructures for MEMS and NEMS Applications." Solid State Phenomena 159 (January 2010): 27–38. http://dx.doi.org/10.4028/www.scientific.net/ssp.159.27.
Full textDas, Aparna. "A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations -=SUP=-*-=/SUP=-." Оптика и спектроскопия 130, no. 3 (2022): 376. http://dx.doi.org/10.21883/os.2022.03.52165.1549-21.
Full textMele, Aldo, Anna Giardini, Tonia M. Di Palma, Chiara Flamini, Hideo Okabe, and Roberto Teghil. "Preparation of the group III nitride thin films AlN, GaN, InN by direct and reactive pulsed laser ablation." International Journal of Photoenergy 3, no. 3 (2001): 111–21. http://dx.doi.org/10.1155/s1110662x01000137.
Full textWiniarski, Maciej J. "Electronic Structure of Rock Salt Alloys of Rare Earth and Group III Nitrides." Materials 13, no. 21 (November 6, 2020): 4997. http://dx.doi.org/10.3390/ma13214997.
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