Relevant bibliographies by topics / Nitrides of the III group

Academic literature on the topic 'Nitrides of the III group'

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Published: 30 May 2022
Last updated: 31 May 2022

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Journal articles on the topic "Nitrides of the III group"

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Christen, Jürgen, and Bernard Gil. "Group III Nitrides." physica status solidi (c) 11, no. 2 (February 2014): 238. http://dx.doi.org/10.1002/pssc.201470041.

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Henini, M. "Properties group III nitrides." III-Vs Review 8, no. 2 (April 1995): 67. http://dx.doi.org/10.1016/0961-1290(95)80114-6.

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Ploog, Klaus H., and Oliver Brandt. "Doping of group III nitrides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, no. 3 (May 1998): 1609–14. http://dx.doi.org/10.1116/1.581128.

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Szweda, Roy. "Properties of group III nitrides." III-Vs Review 10, no. 4 (July 1997): 54. http://dx.doi.org/10.1016/0961-1290(97)90252-0.

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Henini, M. "Properties of Group III nitrides." Microelectronics Journal 26, no. 2-3 (March 1995): xxix—xxx. http://dx.doi.org/10.1016/0026-2692(95)90023-3.

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Costales, Aurora, Miguel A. Blanco, Ángel Martín Pendás, Anil K. Kandalam, and Ravindra Pandey. "Chemical Bonding in Group III Nitrides." Journal of the American Chemical Society 124, no. 15 (April 2002): 4116–23. http://dx.doi.org/10.1021/ja017380o.

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Sussek, Harald, Oliver Stark, Anjana Devi, Hans Pritzkow, and Roland A. Fischer. "Precursor chemistry of Group III nitrides." Journal of Organometallic Chemistry 602, no. 1-2 (May 2000): 29–36. http://dx.doi.org/10.1016/s0022-328x(00)00114-5.

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Wang, Liangbiao, Yanxia Pan, Qianli Shen, Junhao Zhang, Keyan Bao, Zhengsong Lou, Dejian Zhao, and Quanfa Zhou. "Sulfur-assisted synthesis of indium nitride nanoplates from indium oxide." RSC Advances 6, no. 100 (2016): 98153–56. http://dx.doi.org/10.1039/c6ra22471g.

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Chandrasekhar, D., D. J. Smith, S. Strite, M. E. Lin, and H. Morkoc. "Characterization of group Ill-nitrides by high-resolution electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 846–47. http://dx.doi.org/10.1017/s0424820100171961.

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The Group III-nitride semiconductors A1N, GaN, and InN are of interest for their potential applications in short wavelength optoelectronic devices. This interest stems from their direct wideband gapswhich range from 1.9 eV (InN), to 3.4 eV (GaN), to 6.2 eV (A1N). If high quality nitride films can besuccessfully grown, then optoelectronic devices with wavelengths ranging from the visible to the deepultraviolet region of the electromagnetic spectrum are theoretically possible. Recently, LED's basedon GaN and InGaN QW's were demonstrated. Also, their excellent thermal properties make them ideal candidates for high-temperature and high-power devices. Many problems plague nitride research, especiallythe lack of suitable substrate materials that are both lattice- and thermal-matched to the nitrides. The crystal structure of these materials is strongly influenced by the substrate and its orientation.For example, although the equilibrium crystal structure of these nitrides is wurtzite, zincblende phase can be nucleated under nonequilibrium growth conditions but only on cubic substrates. These zincblende nitrides represent new material systems with properties that differ from their wurtzite counterparts. Recently, good quality material has been produced employing metalorganic vapor phase epitaxy (MOVPE) and reactive molecular beam epitaxy (RMBE) techniques with incorporation of buffer layers.
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Gavrilenko, V. I., and R. Q. Wu. "Energy loss spectra of group III nitrides." Applied Physics Letters 77, no. 19 (November 6, 2000): 3042–44. http://dx.doi.org/10.1063/1.1323992.

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Dissertations / Theses on the topic "Nitrides of the III group"

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Kucheyev, Sergei Olegovich. "Ion-beam processes in group-III nitrides." View thesis entry in Australian Digital Theses Program, 2002. http://thesis.anu.edu.au/public/adt-ANU20030211.170915/index.html.

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Kucheyev, Sergei Olegovich, and kucheyev1@llnl gov. "Ion-beam processes in group-III nitrides." The Australian National University. Research School of Physical Sciences and Engineering, 2002. http://thesis.anu.edu.au./public/adt-ANU20030211.170915.

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Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these devices, ion bombardment represents a very attractive technological tool. However, a successful application of ion implantation depends on an understanding of the effects of radiation damage. Hence, this thesis explores a number of fundamental aspects of radiation effects in wurtzite III-nitrides. Emphasis is given to an understanding of (i) the evolution of defect structures in III-nitrides during ion irradiation and (ii) the influence of ion bombardment on structural, mechanical, optical, and electrical properties of these materials. ¶ Structural characteristics of GaN bombarded with keV ions are studied by Rutherford backscattering/channeling (RBS/C) spectrometry and transmission electron microscopy (TEM). Results show that strong dynamic annealing leads to a complex dependence of the damage buildup on ion species with preferential surface disordering. Such preferential surface disordering is due to the formation of surface amorphous layers, attributed to the trapping of mobile point defects by the GaN surface. Planar defects are formed for a wide range of implant conditions during bombardment. For some irradiation regimes, bulk disorder saturates below the amorphization level, and, with increasing ion dose, amorphization proceeds layer-by-layer only from the GaN surface. In the case of light ions, chemical effects of implanted species can strongly affect damage buildup. For heavier ions, an increase in the density of collision cascades strongly increases the level of stable implantation-produced lattice disorder. Physical mechanisms of surface and bulk amorphization and various defect interaction processes in GaN are discussed. ¶ Structural studies by RBS/C, TEM, and atomic force microscopy (AFM) reveal anomalous swelling of implanted regions as a result of the formation of a porous structure of amorphous GaN. Results suggest that such a porous structure consists of N$_{2}$ gas bubbles embedded into a highly N-deficient amorphous GaN matrix. The evolution of the porous structure appears to be a result of stoichiometric imbalance, where N- and Ga-rich regions are produced by ion bombardment. Prior to amorphization, ion bombardment does not produce a porous structure due to efficient dynamic annealing in the crystalline phase. ¶ The influence of In and Al content on the accumulation of structural damage in InGaN and AlGaN under heavy-ion bombardment is studied by RBS/C and TEM. Results show that an increase in In concentration strongly suppresses dynamic annealing processes, while an increase in Al content dramatically enhances dynamic annealing. Lattice amorphization in AlN is not observed even for very large doses of keV heavy ions at -196 C. In contrast to the case of GaN, no preferential surface disordering is observed in InGaN, AlGaN, and AlN. Similar implantation-produced defect structures are revealed by TEM in GaN, InGaN, AlGaN, and AlN. ¶ The deformation behavior of GaN modified by ion bombardment is studied by spherical nanoindentation. Results show that implantation disorder significantly changes the mechanical properties of GaN. In particular, amorphous GaN exhibits plastic deformation even for very low loads with dramatically reduced values of hardness and Young's modulus compared to the values of as-grown GaN. Moreover, implantation-produced defects in crystalline GaN suppress the plastic component of deformation. ¶ The influence of ion-beam-produced lattice defects as well as a range of implanted species on the luminescence properties of GaN is studied by cathodoluminescence (CL). Results indicate that intrinsic lattice defects mainly act as nonradiative recombination centers and do not give rise to yellow luminescence (YL). Even relatively low dose keV light-ion bombardment results in a dramatic quenching of visible CL emission. Postimplantation annealing at temperatures up to 1050 C generally causes a partial recovery of measured CL intensities. However, CL depth profiles indicate that, in most cases, such a recovery results from CL emission from virgin GaN, beyond the implanted layer, due to a reduction in the extent of light absorption within the implanted layer. Experimental data also shows that H, C, and O are involved in the formation of YL. The chemical origin of YL is discussed based on experimental data. ¶ Finally, the evolution of sheet resistance of GaN epilayers irradiated with MeV light ions is studied {\it in-situ}. Results show that the threshold dose of electrical isolation linearly depends on the original free electron concentration and is inversely proportional to the number of atomic displacements produced by the ion beam. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 C. Results also show that both implantation temperature and ion beam flux can affect the process of electrical isolation. This behavior is consistent with significant dynamic annealing, which suggests a scenario where the centers responsible for electrical isolation are defect clusters and/or antisite-related defects. A qualitative model is proposed to explain temperature and flux effects. ¶ The work presented in this thesis has resulted in the identification and understanding of a number of both fundamental and technologically important ion-beam processes in III-nitrides. Most of the phenomena investigated are related to the nature and effects of implantation damage, such as lattice amorphization, formation of planar defects, preferential surface disordering, porosity, decomposition, and quenching of CL. These effects are often technologically undesirable, and the work of this thesis has indicated, in some cases, how such effects can be minimized or controlled. However, the thesis has also investigated one example where irradiation-produced defects can be successfully applied for a technological benefit, namely for electrical isolation of GaN-based devices. Finally, results of this thesis will clearly stimulate further research both to probe some of the mechanisms for unusual ion-induced effects and also to develop processes to avoid or repair unwanted lattice damage produced by ion bombardment.
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Kraeusel, Simon. "Native defects in the group III nitrides." Thesis, University of Strathclyde, 2013. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=19541.

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The promise of the broad range of direct band gaps of the (Al,Ga,In)N system is limited by the crystal quality of current material. As grown defect densities of InN, when compared with the more mature GaN, are extremely high and InN is strongly influenced by these defects. This is particularly important due to the unusual position of the charge neutrality level of InN, leading to both the well known surface charge accumulation and difficulties in p-type doping. While impurities and native defects clearly impact on the bulk carrier density in InN, the effects of threading dislocations on the electrical properties are still in dispute. Issues such as whether the dislocation line is charged or contains dangling bonds remain open. In this work an empirical Stillinger-Weber inter-atomic potential method is employed in a systematic global search for possible dislocation core reconstructions for screw and edge dislocations in GaN. The global optimisation of the dislocation cores is performed for a wide variety of core stoichiometries ranging from Ga rich to N rich. The most promising optimised core configurations are subsequently investigated using density functional theory for GaN and InN, in order to discuss relative stability under a wide range of growth conditions and their influence on the electronic properties of the bulk material.
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Jeffs, Nicholas James. "Growth and structural characterisation of group III nitrides." Thesis, University of Nottingham, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311764.

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Steinhoff, Georg. "Group III-nitrides for bio- and electrochemical sensors." kostenfrei, 2008. http://mediatum2.ub.tum.de/doc/646548/646548.pdf.

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Seetoh, Ian Peiyuan. "Commercialization of group III nitrides-on-silicon technologies." Thesis, Massachusetts Institute of Technology, 2010. https://hdl.handle.net/1721.1/122862.

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Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2010
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 35-39).
While group Ill nitride materials have been commercialized for many years, there is recent interest in growing these materials on silicon substrates as a cost effective alternative to more expensive sapphire and silicon carbide technologies. Therefore, it is necessary to determine how group Ill nitride-on-silicon technologies can be positioned in way for them to be effective in their respective applications, thereby enabling their commercialization. This thesis is a systematic evaluation of the epitaxial growth on silicon carbide, sapphire and silicon substrates, focusing on their lattice-mismatches, thermal expansion mismatches, and thermal conductivity. The subsequent analysis of important commercial applications determined that GaN-on-Si technology is ready for commercialization in the near future. These applications include the InGaN/GaN white light emitting diode and the blue laser diode, as well as the AIGaN/GaN high electron mobility transistor, each with its own unique requirements for the technology and the implementation. It was recommended that start-up firms interested in commercializing GaN-on- Si technology focus on the growth of GaN on silicon substrates and engage device manufacturers proactively. InN and In-rich nitrides can complement maturing GaN and Ga-rich nitrides technologies, resulting in new applications and products in future. While the growth of InN films is currently very challenging, it is believed that the experience and revenue obtained from the commercialization of GaN-on-Si technology can benefit InN-on-Si technology, speeding up the latter's commercialization. A brief business strategy aimed at translating the findings into a feasible approach for commercialization is also provided.
by Ian Peiyuan Seetoh.
M. Eng.
M.Eng. Massachusetts Institute of Technology, Department of Materials Science and Engineering
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Kench, P. J. "Microstructures of group III-nitrides after implantation with gallium." Thesis, University of Surrey, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343459.

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Böttcher, Tim. "Heteroepitaxy of group-III nitrides for the application in laser diodes." [S.l.] : [s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=965575160.

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Mudie, Stephen. "Characterisation of Group III nitrides using hard X-ray synchrotron radiation." Monash University, School of Physics and Materials Engineering, 2004. http://arrow.monash.edu.au/hdl/1959.1/9729.

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Khanderi, Jayaprakash. "Group-III Nitrides contribution to precusor chemistry, MOCVD, nanostructures and multiscale simulation studies /." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=979863538.

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Books on the topic "Nitrides of the III group"

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Bayerl, Martin W. Magnetic resonance investigatons of group III-nitrides. München: Walter-Schottky-Inst., 2000.

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Russell, D. The preparation and characterisation of gallium nitride and group III-V related compounds. Leicester: De Montfort University, 2003.

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Razeghi, M. Optoelectronic devices: III-nitrides. Amsterdam: Elsevier, 2004.

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Li, Jinmin, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, and Bin Xue. III-Nitrides Light Emitting Diodes: Technology and Applications. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7949-3.

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Rare earth doped III-nitrides for optoelectronic and spintronic applications. Dordrecht, the Netherlands: Springer, 2010.

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O’Donnell, Kevin, and Volkmar Dierolf, eds. Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-2877-8.

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Roesky, Herbert W., and David A. Atwood, eds. Group 13 Chemistry III. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/3-540-46110-8.

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Erol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Symposium on III-V Nitride Materials and Processes (3rd 1998 Boston, Mass.). Proceedings of the Third Symposium on III-V Nitride Materials and Processes. Edited by Moustakas T. D, Mohney S. E, Pearton S. J, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society. High Temperature Materials Division. Pennington, N.J: Electrochemical Society, Inc., 1999.

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Symposium, on III-V. Nitride Materials and Processes (2nd 1997 Paris France). Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1998.

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Book chapters on the topic "Nitrides of the III group"

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Teke, Ali, and Hadis Morkoç. "Group III Nitrides." In Springer Handbook of Electronic and Photonic Materials, 753–804. Boston, MA: Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_32.

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Ferreyra, Romualdo A., Congyong Zhu, Ali Teke, and Hadis Morkoç. "Group III Nitrides." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_31.

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Evarestov, R. A. "Nitrides of Boron and Group III Metals." In Theoretical Modeling of Inorganic Nanostructures, 347–427. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-44581-5_6.

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Schubert, Mathias. "Wurtzite-Structure Materials (Group-III Nitrides, ZnO)." In Springer Tracts in Modern Physics, 109–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/978-3-540-44701-6_7.

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Höfling, C., C. Schneider, and A. Forchel. "6.4.6 Devices based on group III–nitrides." In Growth and Structuring, 128–29. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_18.

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Neugebauer, Jörg. "Surface Structure and Adatom Kinetics of Group-III Nitrides." In Nitride Semiconductors, 295–318. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607641.ch6.

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Shul, R. J. "High-Density ECR Etching of Group-III Nitrides." In GaN and Related Materials, 399–431. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-13.

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Abernathy, C. R. "Growth of Group III Nitrides from Molecular Beams." In GaN and Related Materials, 11–51. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-2.

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O'Mahony, Donagh, and James G. Lunney. "Group III Nitride Growth." In Pulsed Laser Deposition of Thin Films, 291–312. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch13.

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Choudhuri, Bijit, and Aniruddha Mondal. "Group III—Nitrides and Other Semiconductors for Terahertz Detector." In Emerging Trends in Terahertz Solid-State Physics and Devices, 189–203. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3235-1_12.

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Conference papers on the topic "Nitrides of the III group"

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Pérez-Caro, M., M. Ramírez-López, J. S. Rojas-Ramírez, I. Martínez-Velis, Y. Casallas-Moreno, S. Gallardo-Hernández, B. J. Babu, et al. "Group III-nitrides nanostructures." In ADVANCED SUMMER SCHOOL IN PHYSICS 2011: EAV2011. AIP, 2012. http://dx.doi.org/10.1063/1.3678628.

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Pearton, S. J., Fan Ren, B. P. Gila, and Cammy R. Abernathy. "Advanced processing of group-III nitrides." In Critical Review Collection. SPIE, 2002. http://dx.doi.org/10.1117/12.482624.

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Holmström, P., X. Y. Liu, H. Uchida, T. Aggerstam, A. Kikuchi, K. Kishino, S. Lourdudoss, T. G. Andersson, and L. Thylén. "Intersubband photonic devices by group-III nitrides." In Asia-Pacific Optical Communications. SPIE, 2007. http://dx.doi.org/10.1117/12.754372.

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Ramsteiner, M. "Nitrogen incorporation in dilute group-III arsenide-nitrides." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511413.

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Saurov, Sumit Narayan, A. F. M. Saniul Haq, and Muhammad Anisuzzaman Talukder. "Wideband photovoltaic energy conversion using group III-nitrides." In 2013 International Conference on Advances in Electrical Engineering (ICAEE). IEEE, 2013. http://dx.doi.org/10.1109/icaee.2013.6750305.

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Hangleiter, Andreas. "Optical gain in wide-bandgap group-III nitrides." In Critical Review Collection. SPIE, 2002. http://dx.doi.org/10.1117/12.482625.

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Fujioka, Hiroshi, Kohei Ueno, Atsushi Kobayashi, and Jitsuo Ohta. "Large area flexible devices based on group-III nitrides." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528756.

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Soni, Shubhangi, S. Verma, Netram Kaurav, and K. K. Choudhary. "High pressure phase transition in group III nitrides compounds." In INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015): Proceeding of International Conference on Condensed Matter and Applied Physics. Author(s), 2016. http://dx.doi.org/10.1063/1.4946489.

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Jiang, Hongxing, and Jing Y. Lin. "Dynamics of fundamental optical transitions in group III nitrides." In Optoelectronics and High-Power Lasers & Applications, edited by Kong-Thon F. Tsen and Harold R. Fetterman. SPIE, 1998. http://dx.doi.org/10.1117/12.306144.

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Lorenz, K., S. M. C. Miranda, N. P. Barradas, E. Alves, Y. Nanishi, W. J. Schaff, L. W. Tu, V. Darakchieva, Floyd D. McDaniel, and Barney L. Doyle. "Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study." In APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twenty-First International Conference. AIP, 2011. http://dx.doi.org/10.1063/1.3586110.

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Reports on the topic "Nitrides of the III group"

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James P. Lewis. ?Structural Transformations in Ceramics: Perovskite-like Oxides and Group III, IV, and V Nitrides? Office of Scientific and Technical Information (OSTI), December 2006. http://dx.doi.org/10.2172/909138.

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Lawniczak-Jablonska, K., [Institute of Physics, Warsaw (Poland)], Z. Liliental-Weber, and E. M. Gullikson. Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603468.

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Edgar, James H. High K Oxide Insulated Gate Group III Nitride-Based FETs. Fort Belvoir, VA: Defense Technical Information Center, March 2014. http://dx.doi.org/10.21236/ada622706.

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Wang, George T., James Randall Creighton, and Albert Alec Talin. MOCVD synthesis of group III-nitride heterostructure nanowires for solid-state lighting. Office of Scientific and Technical Information (OSTI), November 2006. http://dx.doi.org/10.2172/899363.

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Park, Gil Han, and Jin-Joo Song. BMDO-AASERT: Group III Nitride Semiconductor Nanostructure Research MOCVD Growth and Novel Characterizations of High Temperature, High Carrier Density and Microcrack Lasing Effects. Fort Belvoir, VA: Defense Technical Information Center, December 2001. http://dx.doi.org/10.21236/ada397734.

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Dietz, Nikolaus. High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters. Fort Belvoir, VA: Defense Technical Information Center, February 2010. http://dx.doi.org/10.21236/ada563163.

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Vartuli, C. B., J. W. Lee, and J. D. MacKenzie. ICP dry etching of III-V nitrides. Office of Scientific and Technical Information (OSTI), October 1997. http://dx.doi.org/10.2172/541909.

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Vartuli, C. B., S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, E. S. Lambers, and J. C. Zolper. High temperature surface degradation of III-V nitrides. Office of Scientific and Technical Information (OSTI), May 1996. http://dx.doi.org/10.2172/231697.

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Zolper, J. C., S. J. Pearton, J. S. Williams, H. H. Tan, R. J. Jr Karlicek, and R. A. Stall. Ion implantation and annealing studies in III-V nitrides. Office of Scientific and Technical Information (OSTI), December 1996. http://dx.doi.org/10.2172/432983.

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Jiang, Hongxing, and Jingyu Lin. Optical and Electrical Properties of III-Nitrides and Related Materials. Office of Scientific and Technical Information (OSTI), January 2016. http://dx.doi.org/10.2172/1235589.

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