Journal articles: 'Nitridation'

1

Mylinh, Dang Thy, Dae-Ho Yoon, and Chang-Yeoul Kim. "Aluminum Nitride Formation From Aluminum Oxide/Phenol Resin Solid-Gel Mixture By Carbothermal Reduction Nitridation Method." Archives of Metallurgy and Materials 60, no. 2 (June 1, 2015): 1551–55. http://dx.doi.org/10.1515/amm-2015-0171.

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Abstract Hexagonal and cubic crystalline aluminum nitride (AlN) particles were successfully synthesized using phenol resin and alpha aluminum oxide (α-Al2O3) as precursors through new solid-gel mixture and carbothermal reduction nitridaton (CRN) process with molar ratio of C/Al2O3 = 3. The effect of reaction temperature on the decomposition of phenol resin and synthesis of hexagonal and cubic AlN were investigated and the reaction mechanism was also discussed. The results showed that α-Al2O3 powder in homogeneous solid-gel precursor was easily nitrided to yield AlN powder during the carbothermal reduction nitridation process. The reaction temperature needed for a complete conversion for the precursor was about 1700°C, which much lower than that when using α-Al2O3 and carbon black as starting materials. To our knowledge, phenol resin is the first time to be used for synthesizing AlN powder via carbothermal reduction and nitridation method, which would be an efficient, economical, cheap assistant reagent for large scale synthesis of AlN powder.

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Aksenov, Igor, Yoshinobu Nakada, and Hajime Okumura. "Nitridation of GaAs (001)-2×4 Surface Studied by Auger-Electron Spectroscopy." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 136–41. http://dx.doi.org/10.1557/s1092578300002350.

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Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of nitridation of GaAs (001) surface. The analysis of the AES results combined with that of RHEED show that the processes taking place during nitridation greatly differ depending on the nitridation temperature. At low temperatures (≤ 200°C) nitridation is hindered by kinetic restrictions on atomic migration, whereas at high temperatures (≥ 500°C) the process of nitridation takes place simultaneously with the etching of the surface. However, for intermediate temperatures (300°C ∼ 400°C) the results indicate that a complete monolayer of N atoms may be formed on the substrate during the initial stage of nitridation. The post-nitridation annealing of the samples nitrided at the intermediate temperatures results in the formation of a crystalline GaN layer, the line shape of the AES signals from which is identical to that for a GaN reference sample.

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Yang, Xue Qing, Nai Peng, and Cheng Ji Deng. "Nitridation Isothermal Kinetics of In Situ β-Sialon Bonded Al₂O₃-C Refractories." Key Engineering Materials 697 (July 2016): 572–75. http://dx.doi.org/10.4028/www.scientific.net/kem.697.572.

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The kinetics of in-situ β- Sialon bonded Al2O3-C (SAC) refractories were investigated by TGA techniques via isothermal nitridation experiments at different temperatures. The result show that the nitridation process of in-situ β-Sialon bonded Al2O3-C refractories can be divided into two stages: the nitridation reaction rate controlling stage in the first 10 min, and the apparent activation energy of nitridation reaction is 370 kJ/mol ; then the reaction is controlled by both chemical reaction and diffusion rate in the following 110 min, the apparent activation energy of nitridation reaction is 410 kJ/mol.

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Kim, Dae-Young, Pil-Ryung Cha, Ho-Seok Nam, Hyun-Joo Choi, and Kon-Bae Lee. "Effect of Material and Process Variables on Characteristics of Nitridation-Induced Self-Formed Aluminum Matrix Composites—Part 1: Effect of Reinforcement Volume Fraction, Size, and Processing Temperatures." Materials 13, no. 6 (March 13, 2020): 1309. http://dx.doi.org/10.3390/ma13061309.

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This paper investigates the effect of the size and volume fraction of SiC, along with that of the processing temperature, upon the nitridation behavior of aluminum powder during the nitridation-induced self-formed aluminum composite (NISFAC) process. In this new composite manufacturing process, aluminum powder and ceramic reinforcement mixtures are heated in nitrogen gas, thus allowing the exothermic nitridation reaction to partially melt the aluminum powder in order to assist the composite densification and improve the wetting between the aluminum and the ceramic. The formation of a sufficient amount of molten aluminum is key to producing sound, pore-free aluminum matrix composites (AMCs); hence, the degree of nitridation is a key factor. It was demonstrated that the degree of nitridation increases with decreasing SiC particle size and increasing SiC volume fraction, thus suggesting that the SiC surface may act as an effective pathway for nitrogen gas diffusion. Furthermore, it was found that effective nitridation occurs only at an optimal processing temperature. When the degree of nitridation is insufficient, molten Al is unable to fill the voids in the powder bed, leading to the formation of low-quality composites with high porosities. However, excessive nitridation is found to rapidly consume the nitrogen gas, leading to a rapid drop in the pressure in the crucible and exposing the remaining aluminum powder in the upper part of the powder bed. The nitridation behavior is not affected by these variables acting independently; therefore, a systematic study is needed in order to examine the concerted effect of these variables so as to determine the optimal conditions to produce AMCs with desirable properties for target applications.

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Li, Xu, Jianyun Zhao, Ting Liu, Yong Lu, and Jicai Zhang. "Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE." Materials 14, no. 7 (March 31, 2021): 1722. http://dx.doi.org/10.3390/ma14071722.

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Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is favorable for the formation of semi-polar single (101¯3) orientation AlN film, the quality of which shows strong dependence on the nitridation temperature. The full width at half maximum of X-ray diffraction for (101¯3) AlN film was only 0.343° at the optimum nitridation temperature of 1300 °C. It is found that the nano-holes were formed on the surface of substrates by the decomposition of sapphire in the process of high-temperature nitridation, which is closely related to the quality improvement of AlN. At the critical nitridation temperature of 1300 °C, the average size of the nano-holes is about 70 nm, which is in favor of promoting the rapid coalescence of AlN micro-grains in the early stages. However, the size of nano-holes will be enlarged with the further increase of nitridation temperature, which begins to play a negative role in the coalescence of AlN grains. As a result, the grain size will be increased and extended to the epilayer, leading to the deterioration of the AlN film.

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Kim, Dae-Young, Pil-Ryung Cha, Ho-Seok Nam, Hyun-Joo Choi, and Kon-Bae Lee. "Effect of Material and Process Variables on Characteristics of Nitridation-Induced Self-Formed Aluminum Matrix Composites—Part 2: Effect of Nitrogen Flow Rates and Processing Temperatures." Materials 13, no. 5 (March 8, 2020): 1213. http://dx.doi.org/10.3390/ma13051213.

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The nitridation-induced self-formed aluminum matrix composite (NISFAC) process is based on the nitridation reaction, which can be significantly influenced by the characteristics of the starting materials (e.g., the chemical composition of the aluminum powder and the type, size, and volume fraction of the ceramic reinforcement) and the processing variables (e.g., process temperature and time, and flow rate of nitrogen gas). Since these variables do not independently affect the nitridation behavior, a systematic study is necessary to examine the combined effect of these variables upon nitridation. In this second part of our two-part report, we examine the effect of nitrogen flow rates and processing temperatures upon the degree of nitridation which, in turn, determines the amount of exothermic reaction and the amount of molten Al in the nitridation-induced self-formed aluminum matrix composite (NISFAC) process. When either the nitrogen flow rate or the set temperature was too low, high-quality composites were not obtained because the level of nitridation was insufficient to fill the powder voids with molten Al. Hence, since the filling of the voids in the powder bed by molten Al is essential to the NISFAC process, the conditions should be optimized by manipulating the nitrogen flow rate and processing temperature.

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7

Choi, Jung Hun, Suresh Kumar, Shi Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, and Takashi Matsuoka. "Effect of Nitridation on Indium-Composition of InGaN Films." Key Engineering Materials 508 (March 2012): 193–98. http://dx.doi.org/10.4028/www.scientific.net/kem.508.193.

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The Present Study Aims to Understand the Relation between the Nitridation and Indium-Composition of Ingan Grown on Sapphire Substrate Using the Metalorganic Vapor Phase Epitaxy through X-Ray Diffraction Reciprocal Space Mapping Measurements. In-Composition of InGaN on Nitrided Sapphire Substrate Increased to 13% which Is Higher than the Sample without Nitridation with 7%. Also, Flat Surface Was Observed in the Nitrided Sample. Two Times Larger in-Plane Strain Was Induced at the Nitired Sample. Ingan Grown on Low-Temperature Gan Buffer, however, Did Not Show Clear Effect of Nitridation. The Two Investigated Samples Showed Similar Indium Composition, Surface Flatness, and in-Plane Strain with and without Nitridation. Differences of Indium Incorporation and Relaxation of in-Plane Strain Were Attributed to the Effect of AIN Formed by Nitridation Process.

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8

Peng, Zhao Yang, Yi Yu Wang, Hua Jun Shen, Yun Bai, Yi Dan Tang, Xi Ming Chen, Cheng Zhan Li, Ke An Liu, and Xin Yu Liu. "Re-Investigation of SiC/SiO₂ Interface Passivation by Nitrogen Annealing." Materials Science Forum 897 (May 2017): 335–39. http://dx.doi.org/10.4028/www.scientific.net/msf.897.335.

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Effect of nitrogen annealing on SiC/SiO2 interface properties was comparatively investigated for SiC MOS capacitors. Interface properties were characterized by normalized parallel conductance and interface state density value, and dielectric strength was evaluated by the electric-field-to-breakdown (Ebd). The results exhibited that both fast and slow states were present at the nitrogen-annealed samples’ parallel conductance characteristics. Thus, we could conclude that nitrogen annealing led to incomplete nitridation of SiC/SiO2 interface. Based on the results, nitridation mechanism was simply analyzed. It seemed that the nitridation process started from near conduction band, extending till to mid-band-gap. Besides, when the samples underwent higher temperature nitrogen annealing, more slow states were converted into fast ones, indicating that higher annealing temperature could lead to more effective nitridation. It was suggested that nitrogen annealing resulted in incomplete nitridation of SiC/SiO2 interface regardless of oxide thickness and that this process was limited to the annealing temperature. The higher the annealing temperature was, the more effective the nitridation effects were.

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9

Kumar, S. G. Prasanna, Nagaraju Kottam, R. Hari Krishna, M. N. Chandra Prabha, R. Preetham, Santosh Behara, and Tiju Thomas. "Influence of Nitridation on Structural and Photoluminescence Behaviour of CaZrO3:Eu3+ Nanophosphors." Asian Journal of Chemistry 32, no. 6 (2020): 1515–19. http://dx.doi.org/10.14233/ajchem.2020.22586.

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Ca1-xZrO3:xEu3+ (x = 0.05) phosphors have been prepared by using the low temperature solution combustion synthesis. The prepared nano phospors are well characterized by powder X-ray diffraction, scanning electron microscopy, Fourier infrared spectroscopy and transmission electron spectroscopy. PXRD results showed orthorhombic phase and SEM images showed porous agglomerated morphology. Influence of nitridation on structural and photoluminescence properties of the phosphor were investigated for wide range of nitridation time. The photoluminescence (PL) intensity was found to vary with nitridation with small shift in the photoluminescence emission peaks. The probable reasons for the variation of photoluminescence with nitridation are discussed.

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10

Zhang, Qian, Xu Li, Jianyun Zhao, Zhifei Sun, Yong Lu, Ting Liu, and Jicai Zhang. "Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE." Micromachines 12, no. 10 (September 25, 2021): 1153. http://dx.doi.org/10.3390/mi12101153.

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We have investigated the effect of high-temperature nitridation and buffer layer on the semi-polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy (HVPE). It is found the high-temperature nitridation and buffer layer at 1300 °C are favorable for the formation of single (10–13) AlN film. Furthermore, the compressive stress of the (10–13) single-oriented AlN film is smaller than polycrystalline samples which have the low-temperature nitridation layer and buffer layer. On the one hand, the improvement of (10–13) AlN crystalline quality is possibly due to the high-temperature nitridation that promotes the coalescence of crystal grains. On the other hand, as the temperature of nitridation and buffer layer increases, the contents of N-Al-O and Al-O bonds in the AlN film are significantly reduced, resulting in an increase in the proportion of Al-N bonds.

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11

Akahane, Yoshiyuki, Takuo Kano, Kyosuke Kimura, Hiroki Komatsu, Yukimune Watanabe, Tomohiko Yamakami, and Kiichi Kamimura. "Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation." Materials Science Forum 778-780 (February 2014): 631–34. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.631.

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A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.

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12

Fong, Chee Yong, Sha Shiong Ng, Fong Kwong Yam, Abu Hassan Haslan, and Hassan Zainuriah. "Effects of Nitridation Temperatures on Gallium Nitride Thin Films Formed on Silicon Substrates." Advanced Materials Research 895 (February 2014): 57–62. http://dx.doi.org/10.4028/www.scientific.net/amr.895.57.

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In this article, GaN thin films were successfully grown onp-type silicon (p-Si) substrates with orientation (100) through spin coating method followed by nitridation in ammonia ambient at various temperatures (750 °C, 850 °C, and 950 °C). The morphology of the GaN thin films were performed by using field-emission scanning electron microscopy. The results showed that the grain size increases with increasing nitridation temperature from 750 °C to 950 °C. Optical analysis of the GaN thin films was performed using Fourier transform infrared spectroscopy. It was confirmed from the results that the reflectance intensity of the transverse optical and longitudinal optical phonon modes of wurtzite GaN increases with increasing nitridation temperature. All the measured results show that nitridation temperature plays a very important role in improving the quality of the GaN thin films. Finally, the results revealed that the 950 °C was the optimal growth nitridation temperature for synthesizing GaN thin film.

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13

Lerch, Martin. "Nitridation of Zirconia." Journal of the American Ceramic Society 79, no. 10 (August 9, 2005): 2641–44. http://dx.doi.org/10.1111/j.1151-2916.1996.tb09028.x.

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14

Wang, X. S., G. Zhai, J. Yang, L. Wang, Y. Hu, Z. Li, J. C. Tang, X. Wang, K. K. Fung, and N. Cue. "Nitridation of Si()." Surface Science 494, no. 2 (November 2001): 83–94. http://dx.doi.org/10.1016/s0039-6028(01)01409-1.

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Lin, Tie Song, and De Chang Jia. "Influence of Sintering Aids on the Nitridation of Reaction Bonded Si₃N₄/BN Ceramics." Key Engineering Materials 353-358 (September 2007): 1497–500. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.1497.

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The influences of different sintering aids, including Fe2O3, Fe(NO3)3·9H2O, Y2O3+Al2O3 and MgO+Al2O3+SiO2, on the nitridation of reaction bonded Si3N4/BN ceramics were conducted at 1350°C for 2h. Results indicate that the addition of sintering aids could facilitate the nitridation process resulting in higher nitridation percent due to the reactions between sintering aids and surface silica on silicon powder. When 5wt. % of Y2O3 and 2wt. % Al2O3 were added, the nitridation percent reached to 94.4%. The addition of sintering aids has obvious effect on the ratio of α-Si3N4/β-Si3N4. The increase of β-Si3N4 ratio was attributed to the direct reaction of silicon with nitrogen.

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Hayashi, Fumitaka, and Masakazu Iwamoto. "Almost Complete Nitridation of Mesoporous Silica to Mesoporous Silicon (Oxy)Nitride with Ammonia." Advances in Science and Technology 68 (October 2010): 159–64. http://dx.doi.org/10.4028/www.scientific.net/ast.68.159.

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Mesoporous silicon oxynitride and nitride were prepared through nitridation of various mesoporous silica, MCM-41, -48, and SBA-15 with ammonia in a plug flow reactor. The nitrogen contents were dependent on the reaction temperature and the amount of ammonia supplied per sample weight. The appropriate nitridation temperature was 1273 K and the maximum contents of nitrogen were 35-39 wt % which correspond to 88-98% of that of Si3N4. Various physicochemical characterization of the resulting silicon (oxy)nitiride indicated that the pore structures were not changed upon the nitridation though the lattice constants and the pore diameters decreased and the wall thickness increased. The nitridation mechanism was discussed on the basis of 29Si MAS NMR and XPS experiments.

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Zhang, Dong Guo, Zhong Hui Li, Da Qing Peng, and Xun Dong. "Influence of the Nitridation Time after the Al Pre-Seeded Layer on the Properties of GaN Layer Grown on Si (1 1 1)." Advanced Materials Research 887-888 (February 2014): 446–49. http://dx.doi.org/10.4028/www.scientific.net/amr.887-888.446.

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The epitaxial growth of Gallium Nitride (GaN) on 2 inch Si (1 1 1) substrates was investigated, and it was found that by inserting a surface nitridation layer prior to Aluminum Nitride (AlN) nucleation upon substrate, the discoid defects and cracks on the surface were suppressed. Furthermore, compared with the GaN epitaxial layer grown without nitridation, the one with a 30 sec. nitridation layer showed a twice brighter integrated photoluminescence (PL) spectra intensity and a (0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 13.6 arcminute. The crystalline quality of GaN epitaxial layer became worse when the nitridation time exceeded a critical value, and even more cracks appeared on the surface although no discoid defect appeared anymore.

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Li, Yong, Xiaoyan Zhu, Yawei Zhai, Jiaping Wang, Wendong Xue, Junhong Chen, and Jialin Sun. "Research on High Performance Fe3Si-Si3N4-SiC Composite Used for Blast Furnace." Open Materials Science Journal 6, no. 1 (January 18, 2012): 1–5. http://dx.doi.org/10.2174/1874088x01206010001.

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Excellent Fe3Si-Si3N4-SiC composites were successfully prepared with FeSi75 and SiC as main starting materials by nitridation reaction(at 1300°C for 8Hrs). The material properties were studied; the ferrosilicon nitridation mechanism was analyzed through chemical thermodynamics; phase composition, microstructure, corrosion resistance of products were also investigated. The results are shown that the comprehensive properties of Fe3Si-Si3N4-SiC are outstanding. The nitridation products are fiber-like α-Si3N4 and rod-like β-Si3N4, which makes better mechanical behavior due to fiber reinforcement; a great deal of Fe3Si intermetallic compounds uniformly distribute in matrix, which is one of the products of Fe-Si nitridation and as a plastic phase forming in grain boundary optimizes the performance of products. Chemical thermodynamic analysis is shown that the fiber-like α-Si3N4 is formed by SiO(g) and N2(g) reaction which also increases the rate of nitridation. Fe3Si-Si3N4-SiC material has high corrosion resistance. Now it has been successfully applied to one 2000M3 domestic steel plant, the blast furnace operation goes well.

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Li, Yong, Xiao Yan Zhu, Ya Wei Zhai, Jia Ping Wang, Wen Dong Xue, Jun Hong Chen, and Jia Lin Sun. "Study on High Performance Fe₃Si-Si₃N₄-SiC Composite Preparation and its Application in Blast Furnace." Advanced Materials Research 194-196 (February 2011): 1547–53. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.1547.

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Excellent Fe3Si-Si3N4-SiC composites were successfully prepared with FeSi75 and SiC as main starting materials by nitridation reaction(at 1300°C for 8Hrs). The effect of ferrosilicon alloy addition amount on material properties was studied; the ferrosilicon nitridation mechanism was analyzed through chemical thermodynamics; phase composition, microstructure, alkali resistance of products were also investigated. The results show that when ferrosilicon addition amount is 12wt%, the comprehensive property of Fe3Si-Si3N4-SiC is the best. The nitridation products are fiber-like α-Si3N4 and rod-like β-Si3N4, which makes better mechanical behavior due to fiber reinforcement; a great deal of Fe3Si intermetallic compounds uniformly distribute in matrix, which is one of the products of Fe-Si nitridation and as a plastic phase forming in grain boundary optimizes the performance of products. Chemical thermodynamic analysis shows that the fiber-like α-Si3N4 is formed by SiO(g) and N2(g) reaction which also increases the rate of nitridation. Fe3Si-Si3N4-SiC material has good performance. Now it has been successfully applied to one 2000M3 domestic steel plant, the blast furnace operation goes well.

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Shin, Jong-Hyeon, Yong-Hyun Kim, Jong-Bae Park, Dae-Chul Kim, Young-Woo Kim, Jong-Sik Kim, and Jung-Sik Yoon. "A Study on the Characteristics of Inductively Coupled Plasma Nitridation Process." Coatings 12, no. 10 (September 20, 2022): 1372. http://dx.doi.org/10.3390/coatings12101372.

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In this study, we investigated the nitridation of silicon oxide film surfaces using an inductively coupled plasma source. The plasma parameters and nitride film characteristics were measured under various nitrogen gas pressures and radio frequency power levels. Plasma parameters such as electron density, electron temperature, and ion density were measured and analyzed using several instruments. The nitridation characteristics of the thin films were characterized using X-ray photoelectron spectroscopy. The findings provide information on the correlation between nitridation rate and process parameters.

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Lan, Li, Luo, Zhou, Wei, and Yin. "Direct Nitridation Synthesis of Quasi-Spherical β-Si3N4 Powders with CaF2 Additive." Materials 12, no. 18 (September 5, 2019): 2870. http://dx.doi.org/10.3390/ma12182870.

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In this work, the quasi-spherical β-Si3N4 powders were synthesized via an efficient direct nitridation strategy with CaF2 as the catalytic material under NH3 atmosphere. The effect of CaF2 on phase composition and crystalline morphology was studied. CaF2 additive can accelerate the nitridation of silicon powders, and the particles of nitridation products tend to have an equiaxed structure with the CaF2 additive increasing. When 4 wt% CaF2 additive or more was added, submicron β-Si3N4 particles with quasi-spherical morphology and eminent crystal integrity were obtained. In contrast, irregular α-Si3N4 particles appear as the main phase with less than 4 wt% CaF2 additive. The growth mechanism of Si3N4 particles was also discussed. CaxSiyOz liquid phase is crucial in the nitridation of silicon powders with CaF2 additive.

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Ye, Cong, Jia-Ji Wu, Chih-Hung Pan, Tsung-Ming Tsai, Kuan-Chang Chang, Huaqiang Wu, Ning Deng, and He Qian. "Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation." RSC Advances 7, no. 19 (2017): 11585–90. http://dx.doi.org/10.1039/c7ra01104k.

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A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).

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Jia, Ting Ting, Xin Hong Cheng, Duo Cao, Da Wei Xu, Zhong Jian Wang, Chao Xia, Li Zheng, and Yue Hui Yu. "Impact of In Situ NH₃Plasma Treatments on the Interface between HfLaO_x Thin Film and InP Substrate." Advanced Materials Research 721 (July 2013): 67–72. http://dx.doi.org/10.4028/www.scientific.net/amr.721.67.

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In situ NH3 plasma nitridation was utilized to passivate InP surface, HfLaOx film was grown by plasma enhanced atom layer deposition method, and the HfLaOx film remain amorphous after 500°C annealing. High-resolution transmission electron microscopy (HRTEM) images showed that in situ NH3 plasma nitridation process make the boundary between InP and HfLaOx smooth and sharp, and could suppress the formation of the interfacial layer. X-ray photoelectron spectra (XPS) results indicated In-N and P-N bonds were formed on the nitride InP surface. The electrical measurements indicated in situ NH3 plasma nitridation process reduced the hysteresis improved capacitance density and to 7 mV, a sharp transition from depletion to accumulation was observed, the interfacial density states (Dit) of the sample with nitridation was 1.67×1012 cm2 eV1, and the equivalent oxide thickness (EOT) was 0.6 nm. The leakage current was 1.5 mA/cm2 at Vg-Vfb=1V.

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Milakhin D. S., Malin T. V., Mansurov V. G., Kozhukhov A. S., Novikova N. N., Yakovlev V. A., and Zhuravlev K. S. "Determination of the AlN nucleation layer thickness formed on the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-(0001) surface during nitridation process by XPS and IR spectroscopy." Semiconductors 56, no. 8 (2022): 518. http://dx.doi.org/10.21883/sc.2022.08.54455.23.

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The effect of different degrees of the sapphire surface nitridation process completion on the AlN buffer layer morphology has been studied. It was found that ~85% completion of the AlN crystalline phase formation promotes the growth of a two dimensional AlN buffer layer with a smooth surface morphology, regardless of the substrate temperature and ammonia flux. In contrast, during the AlN nucleation layer formation as a result of weak or excessive sapphire nitridation, a polycrystalline or three-dimensional AlN structures with a high density of inversion domains, respectively, were formed. Using independent methods of X-ray photoelectron spectroscopy and infrared spectroscopy of surface polaritons, the thickness of the AlN nucleation layer was determined at ~85% degree of the nitridation process completion, which amounted to ~1 monolayer. Keywords: ammonia molecular beam epitaxy, AlN, sapphire, reflection high-energy electron diffraction, nitridation, inversion domains, X-ray photoelectron spectroscopy, surface polaritons.

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Zhu, Xiao Yan, Yong Li, Jia Ping Wang, Ya Wei Zhai, Jun Bo, and Jian Fang Zhang. "Preparation of Both Reactive α-Si₃N₄ and SiC Mixed Powder in Flame-Isolation Nitridation Shuttle Kiln." Key Engineering Materials 512-515 (June 2012): 17–23. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.17.

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α-Si3N4 possesses excellent sintering activity, which is used to prepare high performance Si3N4-based ceramics and composite refractory. Si3N4 powder is always synthesized by nitriding silicon in controlled-atmosphere furnace whose furnace volume is very small(effective volume: 1840×1420×1660mm), the extreme reaction heat is difficult to diffuse, which leads to high reaction temperature and conversion of α-Si3N4 to β-Si3N4, thus α-Si3N4 is difficult to be obtained in controlled-atmosphere furnace. While flame-isolation nitridation shuttle kiln has much larger furnace volume to conduct reaction heat (effective volume: 11500×4190×1684mm), so it owns homogeneous temperature field and stable low-temperature environment which benefits the preparation of α-Si3N4. Thermodynamic analysis of Si-N system is shown that Si3N4 can be formed by two formats: direct nitridation of Si(s) and indirect nitridation of SiO(g); to ensure completely nitridation, the particle size of silicon powder should be less than 88μm. With reclaimed powder from polysilicon cutting slurry as starting materials, both reactive α-Si3N4 and SiC mixed powder were successfully prepared in flame-isolation nitridation shuttle kiln. Because of the gas-gas reaction between SiO(g) and N2(g), α-Si3N4 is fiber-like and in favor of processing high quality Si3N4-based materials.

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Suzuki, Takuma, Junji Senzaki, Tetsuo Hatakeyama, Kenji Fukuda, Takashi Shinohe, and Kazuo Arai. "Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation." Materials Science Forum 615-617 (March 2009): 557–60. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.557.

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The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was fabricated by using N2O nitridation. The effective conduction band offset (Ec) of MOS structure fabricated by N2O nitridation was increased to 2.2 eV compared with Ec = 1.7 eV for pyrogenic oxidation sample of. Furthermore, significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. It is suggested that the N2O nitridation as a method of gate oxide fabrication satisfies oxide reliability on 4H-SiC(000-1) carbon face MOSFETs.

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Suehiro, Takayuki, Naoto Hirosaki, Yoshinobu Yamamoto, Toshiyuki Nishimura, Mamoru Mitomo, Junichi Takahashi, and Hisanori Yamane. "Preparation of Lutetium Nitride by Direct Nitridation." Journal of Materials Research 19, no. 3 (March 2004): 959–63. http://dx.doi.org/10.1557/jmr.2004.19.3.959.

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Lutetium nitride (LuN), an end member of a new quaternary system Si3N4–SiO2–Lu2O3–LuN, was synthesized by direct nitridation of a lutetium metal. The nitridation extent of the lutetium ingot (10 × 5 × 2 mm) reached about 97% by heating at 1600 °C for 8 h with an applied N2 pressure of 0.92 MPa; the initial shape of the bulk metal was maintained in the course of nitridation. The resulting nitrided lutetium possessed a moderately low oxygen content (∼0.7 wt%), which enables the preparation of uncharacterized high nitrogen-containing phases in the Lu–Si–O–N system.

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Ma, Bei Yue, Ying Li, Li Bing Xu, and Yu Chun Zhai. "In Situ Synthesis of β-Sialon Powder from Fly Ash." Advanced Materials Research 194-196 (February 2011): 2179–82. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2179.

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β-Sialon powder was synthesized by in-situ carbothermal reduction-nitridation process, with fly ash and carbon black as raw materials. The influence of raw materials composition on synthesis process was investigated, and the phase composition and microstructure of the synthesized products were characterized by X-ray diffraction and scanning electronic microscope. The carbothermal reduction-nitridation reaction process was also discussed. It was found that increasing carbon content in a sample could promote the decomposition of mullite in fly ash and the formation of β-Sialon. The β-Sialon could be synthesized at 1550°C for 6h by heating the sample with the mass ratio of fly ash to carbon black of 100:56. The β-Sialon as-received in this study existed as granular with an average particle size of about 2μm. The carbothermal reduction-nitridation reaction process consisted of the nitridation processes of mullite, SiO2and Al2O3in fly ash as well as the conversion process of X-Sialon to β-Sialon.

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29

Balerio, Robert, Hyosim Kim, Andres Morell-Pacheco, Laura Hawkins, Ching-Heng Shiau, and Lin Shao. "ZrN Phase Formation, Hardening and Nitrogen Diffusion Kinetics in Plasma Nitrided Zircaloy-4." Materials 14, no. 13 (June 25, 2021): 3572. http://dx.doi.org/10.3390/ma14133572.

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Plasma nitridation was conducted to modify the surfaces of Zircaloy-4. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman analysis were used to characterize microstructures and phases. Surface indentation and cross-sectional indentation were performed to evaluate mechanical property changes. Nitridation forms a thin layer of ZrN phase, followed by a much deeper layer affected by nitrogen diffusion. The ZrN phase is confirmed by both TEM and Raman characterization. The Raman peaks of ZrN phase show a temperature dependence. The intensity increases with increasing nitridation temperatures, reaches a maximum at 700 °C, and then decreases at higher temperatures. The ZrN layer appears as continuous small columnar grains. The surface polycrystalline ZrN phase is harder than the bulk by a factor of ~8, and the nitrogen diffusion layer is harder by a factor of ~2–5. The activation energy of nitrogen diffusion was measured to be 2.88 eV. The thickness of the nitrogen-hardened layer is controllable by changing the nitridation temperature and duration.

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Nakanuma, Takato, Yu Iwakata, Arisa Watanabe, Takuji Hosoi, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, and Heiji Watanabe. "Comprehensive physical and electrical characterizations of NO nitrided SiO₂/4H-SiC(112̄0) interfaces." Japanese Journal of Applied Physics 61, SC (March 2, 2022): SC1065. http://dx.doi.org/10.35848/1347-4065/ac4685.

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Abstract Nitridation of SiO2/4H-SiC(112̄0) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance–voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the interface defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

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Fukushima, Jun, Keiichiro Kashimura, and Hirotsugu Takizawa. "Nitridation Reaction of Titanium Powders by 2.45 GHz Multimode Microwave Irradiation using a SiC Susceptor in Atmospheric Conditions." Processes 8, no. 1 (December 21, 2019): 20. http://dx.doi.org/10.3390/pr8010020.

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A titanium nitride (TiN) coating using microwaves can be accomplished in air, and satisfies the required conditions of an on-demand TiN coating process. However, the coating mechanism using microwaves is not completely clear. In this study, to understand the detailed mechanism of microwave titanium nitridation in air, the quantity of nitrogen and oxygen in reacted TiN powder has been investigated by an inert melting method. Titanium powders were irradiated with microwaves by a multi-mode type 2.45 GHz microwave irradiation apparatus, while also being held at various temperatures for two different dwell times. X-ray diffraction (XRD) results revealed that nitridation of the powder progressed with increasing process temperature, and the nitridation corresponds to the powder color after microwave irradiation. The nitrogen contents of the samples increased with increasing processing temperature and dwell time, unlike oxygen. It is postulated that the reaction of convected air with titanium is a key role to control nitridation in this system.

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32

Chao, Shou-Yen, Wen-How Lan, Shou-Kong Fan, Zi-Wen Zhon, and Mu-Chun Wang. "Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments." Micromachines 13, no. 11 (October 29, 2022): 1861. http://dx.doi.org/10.3390/mi13111861.

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The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant, but there is also a reduction in gate leakage. In the past, the effect of nitridation treatment on channel-length was revealed, but a channel-width effect with that treatment was not found. Sensing the different nano-node channel-width n-channel MOSFETs, the electrical characteristics of these test devices with nitridation treatments were studied and the relationship among them was analyzed. Based on measurement of the VT, SS, Gm, ION, and IOFF values of the tested devices, the electrical performance of them related to process treatment is improved, including the roll-off effect of channel-width devices. On the whole, the lower thermal budget in nitridation treatment shows better electrical performance for the tested channel-width devices.

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33

Akahane, Yoshiyuki, Kyosuke Kimura, Takuo Kano, Yukimune Watanabe, Tomohiko Yamakami, Shinji Fujimaki, and Kiichi Kamimura. "Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases." Materials Science Forum 821-823 (June 2015): 504–7. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.504.

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The mixed gas of nitrogen and hydrogen was used for the plasma nitridation of SiC surface.A small amount of hydrogen was effective to activate the nitridation reaction and suppress the oxidationreaction. The interface properties were improved by using nitride layer as an interfacial bufferlayer of SiC MIS structure.

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34

Yang, Tao, Yan Gai Liu, Ding Yun Ye, Qi Wang, Zhao Hui Huang, and Ming Hao Fang. "Phase Behavior Analysis of Low-Grade Bauxite and Rutile by Carbothermal Reduction-Nitridation." Advanced Materials Research 624 (December 2012): 239–43. http://dx.doi.org/10.4028/www.scientific.net/amr.624.239.

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In this study, β-Sialon/Al2O3/TiN diphase powder was synthesized using low-grade bauxite and rutile via carbothermal reduction-nitridation. The phase transitions of low-grade bauxite and rutile in the carbothermal reduction and nitridation process were analyzed by XRD, SEM and EDS. The effects of different reaction parameters such as reaction temperature, rutile addition on the phase composition and microstructure of products were analyzed. The results showed that β-Sialon/Al2O3/TiN powder was prepared using low-grade bauxite and rutile as raw materials and coke as reducing agent by carbothermal reduction-nitridation reaction in flowing nitrogen atmosphere of 0.03 MPa at 1350-1375 °C, for 4 h.

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35

Sung, Mei-Chen, Ya-Fen Wang, Shang-Che Chen, and Cheng-Hsien Tsai. "Two-Stage Plasma-Thermal Nitridation Processes for the Production of Aluminum Nitride Powders from Aluminum Powders." Materials 12, no. 3 (January 24, 2019): 359. http://dx.doi.org/10.3390/ma12030359.

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The synthesis of aluminum nitride (AlN) powders is traditionally done via the thermal nitridation process, in which the reaction temperature reaches as high as 960 °C, with more than several hours of reaction time. Moreover, the occurrence of agglomeration in melting Al particles results in poor AlN quality and a low efficiency of nitridation. In this study, an atmosphere-pressure microwave-plasma preceded the pre-synthesis process. This process operates at 550 °C for 2–10 min with the addition of NH4Cl (Al: NH4Cl = 1:1) for generating a hard AlN shell to avoid the flow and aggregation of the melting Al metals. Then, the mass production of AlN powders by the thermal nitridation process can be carried out by rapidly elevating the reaction temperature (heating rate of 15 °C/min) until 1050 °C is reached. X-Ray Diffractometer (XRD) crystal analysis shows that without the peak, Al metals can be observed by synthesizing AlN via plasma nitridation (at 550 °C for 2 min, Al: NH4Cl = 1:1), followed by thermal nitridation (at 950 °C for 1 h). Moreover, SEM images show that well-dispersed AlN powders without agglomeration were produced. Additionally, the particle size of the produced AlN powder (usually < 1 μm) tends to be reduced from 2–5 μm (Al powders), resulting in a more efficient synthesizing process (lower reaction temperature, shorter reaction time) for mass production.

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IGARI, Yoshiyuki, Izumo ABE, and Isao KUSUNOKI. "Nitridation of Aluminum Surface." SHINKU 45, no. 5 (2002): 463–67. http://dx.doi.org/10.3131/jvsj.45.463.

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37

Habraken, F. H. P. M., E. L. J. Geerlings, R. H. G. Tijhaar, A. Slomp, and W. F. van der Weg. "Thermal nitridation of SiOxHyfilms." Journal of Applied Physics 62, no. 6 (September 15, 1987): 2573–75. http://dx.doi.org/10.1063/1.339429.

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38

Ceravola, Roberta, Carlos Frontera, Judith Oró-Solé, Ashley P. Black, Clemens Ritter, Ignasi Mata, Elies Molins, Josep Fontcuberta, and Amparo Fuertes. "Topochemical nitridation of Sr2FeMoO6." Chemical Communications 55, no. 21 (2019): 3105–8. http://dx.doi.org/10.1039/c8cc09845j.

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The topotactic nitridation of cation ordered Sr₂FeMoO₆ in NH₃ leads to cubic, Fm3̄m oxynitride Sr₂FeMoO_4.9N_1.1 showing ferromagnetic order and negative magnetoresistance below 100 K.

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39

Cofer, C. G., and J. A. Lewis. "Chromium catalysed silicon nitridation." Journal of Materials Science 29, no. 22 (November 1994): 5880–86. http://dx.doi.org/10.1007/bf00366871.

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40

Wright, P. J., A. Kermani, and K. C. Saraswat. "Nitridation and post-nitridation anneals of SiO/sub 2/ for ultrathin dielectrics." IEEE Transactions on Electron Devices 37, no. 8 (1990): 1836–41. http://dx.doi.org/10.1109/16.57134.

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41

Yin, Hong Feng, and Yun Tang. "Preparation of Ca-α-Sialon-SiC Multiphase Ceramics from Gasification Slag." Materials Science Forum 695 (July 2011): 328–31. http://dx.doi.org/10.4028/www.scientific.net/msf.695.328.

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The chemical composition, phase constituents and microstructure of gasification slag from Texaco gasifier, the carbothermal reduction nitridation of gasification slag were investigated by X-ray fluorescence spectrometry, X-ray diffractometry and scanning electron microscopy. The effect of nitridation temperature on the phase composition and morphology of nitridation reaction products was studied. Ca-α-sialon—SiC multiphase ceramics were fabricated and characterized. The results showed that: The coal gasification slag was an ideal raw material to synthesize Sialon powder. When introducing 3wt%Y2O3+2wt% MgO into sialon powder carbothermally synthesized at 1450°C, the Vickers hardness and fracture toughness of Sialon-SiC multiphase ceramics hot-pressed at 1650 °C were 18.6 GPa and 5.2 MPa·m1/2, respectively.

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42

Qin, Fu Wen, Ai Min Wu, Feng Chun Liu, Bao Dan Liu, and Xin Jiang. "Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method." Materials Science Forum 654-656 (June 2010): 1716–19. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1716.

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Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.

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43

Huang, Qing, Guojin Zheng, and Tian Wu. "Surface nitridation of Ta powder by molten-salt electrolysis of Ta2O5 under N2 atmosphere." Functional Materials Letters 13, no. 07 (September 3, 2020): 2050032. http://dx.doi.org/10.1142/s1793604720500320.

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The electro-deoxidation of Ta2O5 in molten CaCl2 under N2 atmosphere is a facile way for the in situ surface nitridation of Ta particles. The cell voltage and electrolysis time of Ta2O5 are rationalized to realize the in situ surface nitridation of Ta. All the characterization results including X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and elements mapping as well as X-ray photoelectron spectroscopy (XPS) confirm the formation of Ta2N layers on the surface of Ta particles, with the thickness of 3–4[Formula: see text]nm. This method provides a strategy for the facile in situ surface nitridation with N2 as the nitrogen source for the fabrication of core-shell structured catalysts.

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44

Liu, Dangrong R., Samuel Shinozaki, Motoyuki Miyata, and Yoshiyuki Yasutomi. "Influence of Fe impurity in nitridation of Si + B4C green compact." Journal of Materials Research 13, no. 2 (February 1998): 329–42. http://dx.doi.org/10.1557/jmr.1998.0045.

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The addition of B4C powder retarded the nitridation of the silicon powder green body by the formation of a borosilicate layer in interfaces between Si grains. The viscous layers hindered the SiO formation and the Si and N diffusion. Despite the presence of borosilicate layers, the Fe impurity in the green body still promoted the Si nitridation process by the formation of fluid iron silicide and the promotion of the B4C conversion to BN in gaps or holes in the viscous borosilicate layers. The addition of 5% H2 in the N2 atmosphere accelerated the Si + B4C nitridation, where the hydrogen acted as an oxygen getter, thus reducing the amount of glassy borosilicate in the interface.

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45

Park, Dong Soo, Myoung Won Lee, Hai Doo Kim, Young Jo Park, and Yeon Gil Jung. "Fabrication and Properties of Porous RBSN." Key Engineering Materials 287 (June 2005): 277–81. http://dx.doi.org/10.4028/www.scientific.net/kem.287.277.

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Porous silicon nitride was prepared by extrusion of silicon followed by nitridation at 1723 K. PMMA spheres with 20 µm in diameter were employed as the pore-forming precursors. b-silicon nitride whiskers were added to the dough for extrusion and their effect on the properties of porous RBSN were examined. The nitridation rate that was obtained from the weight change of the sample due to the nitridation process was between 75% and 80%. However, XRD patterns of the samples after nitridation had no Si peak. That means the actual nitridation rate of the sample was higher than that obtained from the weight change. Porosity of the sample was between 45% and 55%. The XRD patterns from the surfaces of the samples with the silicon nitride whiskers parallel and perpendicular to the extrusion direction showed a slight anisotropy. The pore size distributions of the samples showed a highly populated pores smaller than 3 micrometer, especially for the samples with the whiskers. The room temperature flexural strengths of the samples were between 25 MPa and 35 MPa, the sample with 5 wt% whiskers showing the highest value. The microstructures of the samples contained pores with about 100 micrometer in diameter as well as fine pores with a few micrometer in diameter. Closer observation of the fracture surface of the samples revealed that fine whiskers were inside the pores. A small honeycomb was fabricated by reaction bonding of silicon.

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46

Yin, Shao Wu, Li Wang, Li Ge Tong, Fu Ming Yang, and Yan Hui Li. "Kinetics Analysis of Direct Nitridation of Silicon Powders at Atmospheric Pressure." Advanced Materials Research 562-564 (August 2012): 167–70. http://dx.doi.org/10.4028/www.scientific.net/amr.562-564.167.

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Silicon nitride powders were prepared via direct nitridation of silicon powders diluted with -Si3N4at atmospheric pressure. The nitridation temperature and time were ranged from1623K to 1823K and from 0 minute to 20 minutes respectively. Based on the relations between the conversion rate of silicon and the time at different temperatures, and using shrinking core model, a simple model for the reaction between silicon and nitrogen was derived. The model showed that the relations between the conversion rate of silicon and the time displayed asymptotic exponential conversion trend. Using this model, the kinetics parameters of nitridation of silicon powder at atmospheric pressure were calculated, including pre-exponential factor in Arrhenius equation, activation energy, effective diffusion coefficient, and the formula of the reaction rate constant.

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47

Милахин, Д. С., Т. В. Малин, В. Г. Мансуров, А. С. Кожухов, Н. Н. Новикова, В. А. Яковлев, and К. С. Журавлев. "Определение толщины зародышевого слоя AlN, сформированного на поверхности Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-(0001) в процессе нитридизации, методами РФЭС и ИК-спектроскопии." Физика и техника полупроводников 56, no. 8 (2022): 734. http://dx.doi.org/10.21883/ftp.2022.08.53137.23.

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The effect of different degrees of the sapphire surface nitridation process completion on the AlN buffer layer morphology has been studied. It was found that ~85% completion of the AlN crystalline phase formation promotes the growth of a two dimensional AlN buffer layer with a smooth surface morphology, regardless of the substrate temperature and ammonia flux. In contrast, during the AlN nucleation layer formation as a result of weak or excessive sapphire nitridation, a polycrystalline or three-dimensional AlN structures with a high density of inversion domains, respectively, were formed. Using independent methods of X-ray photoelectron spectroscopy and infrared spectroscopy of surface polaritons, the thickness of the AlN nucleation layer was determined at ~85% degree of the nitridation process completion, which amounted to ~1 monolayer.

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Yang, Wan Li, Zhong Qi Shi, Zhi Hao Jin, and Guan Jun Qiao. "Effect of Oxide Additives on Catalysis and Microstructure of RBSN Using Low-Purity Silicon Powder as Raw Materials." Materials Science Forum 695 (July 2011): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.695.409.

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The three kind of oxides such as 3Y-ZrO2, Fe2O3and MgO were used as catalyst in reaction bonded silicon nitride (RBSN) with low-purity silicon powder as raw materials. The oxides can strongly promoted the nitridation ratio of RBSN, and the catalysis effects of these oxides for RBSN were investigated. After 4h nitridation, the degree of nitridation increased from 43% to 96% by adding 10wt% of 3Y-ZrO2additive comparing with the sample without additive, and the catalystic effects of Fe2O3and MgO were slightly less than 3Y-ZrO2additive. XRD patterns revealed that the main phases of the reaction products were α-Si3N4, β-Si3N4and Si-N-O intermediation. SEM micrographs show that the hexagonal columnar β-Si3N4separated from acicular α-Si3N4.

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Park, Dong Soo, Byung Dong Hahn, and D. J. Baik. "Microstructure and Properties of Sintered Reaction Bonded Silicon Nitride with Aligned Whisker Seeds." Key Engineering Materials 287 (June 2005): 271–76. http://dx.doi.org/10.4028/www.scientific.net/kem.287.271.

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Sintered reaction bonded silicon nitride with aligned whisker seeds was prepared by tape casting silicon slurry with 5 wt% b-Si3N4 whisker seeds followed by nitridation and sintering. Three different sintering additives were used for the samples; 7 wt% Y2O3, 6 wt% Y2O3 + 1 wt% Al2O3 and 5 wt% Y2O3 + 2 wt% Al2O3. The sample with 5 wt% Y2O3 + 2 wt% Al2O3 showed the fastest a to b phase transformation after nitridation and the highest fracture toughness and flexural strength after gas pressure sintering among the samples. It also had finer microstructure than the other samples after sintering at 2248 K and at 2273 K. The finer microstructure was related to the faster phase transformation after nitridation, which resulted in the higher flexural strength.

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Moges, Kidist, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Shinsuke Harada, and Heiji Watanabe. "Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N₂-Annealed SiO₂/4H-SiC(0001) Structures." Materials Science Forum 963 (July 2019): 226–29. http://dx.doi.org/10.4028/www.scientific.net/msf.963.226.

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We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.

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Journal articles on the topic 'Nitridation'

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