Relevant bibliographies by topics / Nitridation

Academic literature on the topic 'Nitridation'

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Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Nitridation"

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Mylinh, Dang Thy, Dae-Ho Yoon, and Chang-Yeoul Kim. "Aluminum Nitride Formation From Aluminum Oxide/Phenol Resin Solid-Gel Mixture By Carbothermal Reduction Nitridation Method." Archives of Metallurgy and Materials 60, no. 2 (June 1, 2015): 1551–55. http://dx.doi.org/10.1515/amm-2015-0171.

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Abstract Hexagonal and cubic crystalline aluminum nitride (AlN) particles were successfully synthesized using phenol resin and alpha aluminum oxide (α-Al2O3) as precursors through new solid-gel mixture and carbothermal reduction nitridaton (CRN) process with molar ratio of C/Al2O3 = 3. The effect of reaction temperature on the decomposition of phenol resin and synthesis of hexagonal and cubic AlN were investigated and the reaction mechanism was also discussed. The results showed that α-Al2O3 powder in homogeneous solid-gel precursor was easily nitrided to yield AlN powder during the carbothermal reduction nitridation process. The reaction temperature needed for a complete conversion for the precursor was about 1700°C, which much lower than that when using α-Al2O3 and carbon black as starting materials. To our knowledge, phenol resin is the first time to be used for synthesizing AlN powder via carbothermal reduction and nitridation method, which would be an efficient, economical, cheap assistant reagent for large scale synthesis of AlN powder.
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Aksenov, Igor, Yoshinobu Nakada, and Hajime Okumura. "Nitridation of GaAs (001)-2×4 Surface Studied by Auger-Electron Spectroscopy." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 136–41. http://dx.doi.org/10.1557/s1092578300002350.

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Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of nitridation of GaAs (001) surface. The analysis of the AES results combined with that of RHEED show that the processes taking place during nitridation greatly differ depending on the nitridation temperature. At low temperatures (≤ 200°C) nitridation is hindered by kinetic restrictions on atomic migration, whereas at high temperatures (≥ 500°C) the process of nitridation takes place simultaneously with the etching of the surface. However, for intermediate temperatures (300°C ∼ 400°C) the results indicate that a complete monolayer of N atoms may be formed on the substrate during the initial stage of nitridation. The post-nitridation annealing of the samples nitrided at the intermediate temperatures results in the formation of a crystalline GaN layer, the line shape of the AES signals from which is identical to that for a GaN reference sample.
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Yang, Xue Qing, Nai Peng, and Cheng Ji Deng. "Nitridation Isothermal Kinetics of In Situ β-Sialon Bonded Al2O3-C Refractories." Key Engineering Materials 697 (July 2016): 572–75. http://dx.doi.org/10.4028/www.scientific.net/kem.697.572.

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The kinetics of in-situ β- Sialon bonded Al2O3-C (SAC) refractories were investigated by TGA techniques via isothermal nitridation experiments at different temperatures. The result show that the nitridation process of in-situ β-Sialon bonded Al2O3-C refractories can be divided into two stages: the nitridation reaction rate controlling stage in the first 10 min, and the apparent activation energy of nitridation reaction is 370 kJ/mol ; then the reaction is controlled by both chemical reaction and diffusion rate in the following 110 min, the apparent activation energy of nitridation reaction is 410 kJ/mol.
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Kim, Dae-Young, Pil-Ryung Cha, Ho-Seok Nam, Hyun-Joo Choi, and Kon-Bae Lee. "Effect of Material and Process Variables on Characteristics of Nitridation-Induced Self-Formed Aluminum Matrix Composites—Part 1: Effect of Reinforcement Volume Fraction, Size, and Processing Temperatures." Materials 13, no. 6 (March 13, 2020): 1309. http://dx.doi.org/10.3390/ma13061309.

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This paper investigates the effect of the size and volume fraction of SiC, along with that of the processing temperature, upon the nitridation behavior of aluminum powder during the nitridation-induced self-formed aluminum composite (NISFAC) process. In this new composite manufacturing process, aluminum powder and ceramic reinforcement mixtures are heated in nitrogen gas, thus allowing the exothermic nitridation reaction to partially melt the aluminum powder in order to assist the composite densification and improve the wetting between the aluminum and the ceramic. The formation of a sufficient amount of molten aluminum is key to producing sound, pore-free aluminum matrix composites (AMCs); hence, the degree of nitridation is a key factor. It was demonstrated that the degree of nitridation increases with decreasing SiC particle size and increasing SiC volume fraction, thus suggesting that the SiC surface may act as an effective pathway for nitrogen gas diffusion. Furthermore, it was found that effective nitridation occurs only at an optimal processing temperature. When the degree of nitridation is insufficient, molten Al is unable to fill the voids in the powder bed, leading to the formation of low-quality composites with high porosities. However, excessive nitridation is found to rapidly consume the nitrogen gas, leading to a rapid drop in the pressure in the crucible and exposing the remaining aluminum powder in the upper part of the powder bed. The nitridation behavior is not affected by these variables acting independently; therefore, a systematic study is needed in order to examine the concerted effect of these variables so as to determine the optimal conditions to produce AMCs with desirable properties for target applications.
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Li, Xu, Jianyun Zhao, Ting Liu, Yong Lu, and Jicai Zhang. "Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE." Materials 14, no. 7 (March 31, 2021): 1722. http://dx.doi.org/10.3390/ma14071722.

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Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is favorable for the formation of semi-polar single (101¯3) orientation AlN film, the quality of which shows strong dependence on the nitridation temperature. The full width at half maximum of X-ray diffraction for (101¯3) AlN film was only 0.343° at the optimum nitridation temperature of 1300 °C. It is found that the nano-holes were formed on the surface of substrates by the decomposition of sapphire in the process of high-temperature nitridation, which is closely related to the quality improvement of AlN. At the critical nitridation temperature of 1300 °C, the average size of the nano-holes is about 70 nm, which is in favor of promoting the rapid coalescence of AlN micro-grains in the early stages. However, the size of nano-holes will be enlarged with the further increase of nitridation temperature, which begins to play a negative role in the coalescence of AlN grains. As a result, the grain size will be increased and extended to the epilayer, leading to the deterioration of the AlN film.
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Kim, Dae-Young, Pil-Ryung Cha, Ho-Seok Nam, Hyun-Joo Choi, and Kon-Bae Lee. "Effect of Material and Process Variables on Characteristics of Nitridation-Induced Self-Formed Aluminum Matrix Composites—Part 2: Effect of Nitrogen Flow Rates and Processing Temperatures." Materials 13, no. 5 (March 8, 2020): 1213. http://dx.doi.org/10.3390/ma13051213.

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The nitridation-induced self-formed aluminum matrix composite (NISFAC) process is based on the nitridation reaction, which can be significantly influenced by the characteristics of the starting materials (e.g., the chemical composition of the aluminum powder and the type, size, and volume fraction of the ceramic reinforcement) and the processing variables (e.g., process temperature and time, and flow rate of nitrogen gas). Since these variables do not independently affect the nitridation behavior, a systematic study is necessary to examine the combined effect of these variables upon nitridation. In this second part of our two-part report, we examine the effect of nitrogen flow rates and processing temperatures upon the degree of nitridation which, in turn, determines the amount of exothermic reaction and the amount of molten Al in the nitridation-induced self-formed aluminum matrix composite (NISFAC) process. When either the nitrogen flow rate or the set temperature was too low, high-quality composites were not obtained because the level of nitridation was insufficient to fill the powder voids with molten Al. Hence, since the filling of the voids in the powder bed by molten Al is essential to the NISFAC process, the conditions should be optimized by manipulating the nitrogen flow rate and processing temperature.
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Choi, Jung Hun, Suresh Kumar, Shi Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, and Takashi Matsuoka. "Effect of Nitridation on Indium-Composition of InGaN Films." Key Engineering Materials 508 (March 2012): 193–98. http://dx.doi.org/10.4028/www.scientific.net/kem.508.193.

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The Present Study Aims to Understand the Relation between the Nitridation and Indium-Composition of Ingan Grown on Sapphire Substrate Using the Metalorganic Vapor Phase Epitaxy through X-Ray Diffraction Reciprocal Space Mapping Measurements. In-Composition of InGaN on Nitrided Sapphire Substrate Increased to 13% which Is Higher than the Sample without Nitridation with 7%. Also, Flat Surface Was Observed in the Nitrided Sample. Two Times Larger in-Plane Strain Was Induced at the Nitired Sample. Ingan Grown on Low-Temperature Gan Buffer, however, Did Not Show Clear Effect of Nitridation. The Two Investigated Samples Showed Similar Indium Composition, Surface Flatness, and in-Plane Strain with and without Nitridation. Differences of Indium Incorporation and Relaxation of in-Plane Strain Were Attributed to the Effect of AIN Formed by Nitridation Process.
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Peng, Zhao Yang, Yi Yu Wang, Hua Jun Shen, Yun Bai, Yi Dan Tang, Xi Ming Chen, Cheng Zhan Li, Ke An Liu, and Xin Yu Liu. "Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing." Materials Science Forum 897 (May 2017): 335–39. http://dx.doi.org/10.4028/www.scientific.net/msf.897.335.

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Effect of nitrogen annealing on SiC/SiO2 interface properties was comparatively investigated for SiC MOS capacitors. Interface properties were characterized by normalized parallel conductance and interface state density value, and dielectric strength was evaluated by the electric-field-to-breakdown (Ebd). The results exhibited that both fast and slow states were present at the nitrogen-annealed samples’ parallel conductance characteristics. Thus, we could conclude that nitrogen annealing led to incomplete nitridation of SiC/SiO2 interface. Based on the results, nitridation mechanism was simply analyzed. It seemed that the nitridation process started from near conduction band, extending till to mid-band-gap. Besides, when the samples underwent higher temperature nitrogen annealing, more slow states were converted into fast ones, indicating that higher annealing temperature could lead to more effective nitridation. It was suggested that nitrogen annealing resulted in incomplete nitridation of SiC/SiO2 interface regardless of oxide thickness and that this process was limited to the annealing temperature. The higher the annealing temperature was, the more effective the nitridation effects were.
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Kumar, S. G. Prasanna, Nagaraju Kottam, R. Hari Krishna, M. N. Chandra Prabha, R. Preetham, Santosh Behara, and Tiju Thomas. "Influence of Nitridation on Structural and Photoluminescence Behaviour of CaZrO3:Eu3+ Nanophosphors." Asian Journal of Chemistry 32, no. 6 (2020): 1515–19. http://dx.doi.org/10.14233/ajchem.2020.22586.

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Ca1-xZrO3:xEu3+ (x = 0.05) phosphors have been prepared by using the low temperature solution combustion synthesis. The prepared nano phospors are well characterized by powder X-ray diffraction, scanning electron microscopy, Fourier infrared spectroscopy and transmission electron spectroscopy. PXRD results showed orthorhombic phase and SEM images showed porous agglomerated morphology. Influence of nitridation on structural and photoluminescence properties of the phosphor were investigated for wide range of nitridation time. The photoluminescence (PL) intensity was found to vary with nitridation with small shift in the photoluminescence emission peaks. The probable reasons for the variation of photoluminescence with nitridation are discussed.
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Zhang, Qian, Xu Li, Jianyun Zhao, Zhifei Sun, Yong Lu, Ting Liu, and Jicai Zhang. "Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE." Micromachines 12, no. 10 (September 25, 2021): 1153. http://dx.doi.org/10.3390/mi12101153.

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We have investigated the effect of high-temperature nitridation and buffer layer on the semi-polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy (HVPE). It is found the high-temperature nitridation and buffer layer at 1300 °C are favorable for the formation of single (10–13) AlN film. Furthermore, the compressive stress of the (10–13) single-oriented AlN film is smaller than polycrystalline samples which have the low-temperature nitridation layer and buffer layer. On the one hand, the improvement of (10–13) AlN crystalline quality is possibly due to the high-temperature nitridation that promotes the coalescence of crystal grains. On the other hand, as the temperature of nitridation and buffer layer increases, the contents of N-Al-O and Al-O bonds in the AlN film are significantly reduced, resulting in an increase in the proportion of Al-N bonds.
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Dissertations / Theses on the topic "Nitridation"

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Vogt, Kirkland W. "Nitridation reactions with hydrazine." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/10032.

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Barker, Samuel Paul. "Kinetically-Controlled Nitridation of Titanium Alloys." Cleveland, Ohio : Case Western Reserve University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1270136080.

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Thesis (Master of Sciences)--Case Western Reserve University, 2010
Department of Materials Science and Engineering Title from PDF (viewed on 2010-05-25) Includes abstract Includes bibliographical references and appendices Available online via the OhioLINK ETD Center
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Dalton, John Christian. "Thermodynamics of Paraequilibrium Carburization and Nitridation of Stainless Steels." Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1386586585.

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Kwan, Man-chi. "Mobility enhancement for organic thin-film transistors using nitridation method." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37181580.

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Kwan, Man-chi, and 關敏志. "Mobility enhancement for organic thin-film transistors using nitridation method." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37181580.

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Cho, Young Whan. "Synthesis of nitrogen ceramic powders by carbothermal reduction and nitridation." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277802.

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Ashkin, Alena. "Formation of silicon nitride based materials by nitridation and sintering." Doctoral thesis, Luleå tekniska universitet, 1995. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-17425.

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Todays demands on silicon nitride based materials for structural applications focus on microstructures rendering high strengths and reliability at reasonable costs. This work was mainly aimed at production of sialons for these types of applications by nitridation with subsequent sintering. For this purpose both the influence of different factors on sialon formation and the effect of additives in nitriding was studied, as well as different sintering methods. Y-alfa-sialons with x=0.1 to 0.9 in the formula Yx(Sil2-4.5x,Al4.5x)(01.5x,N 16-1.5x) prepared from silicon nitride powders were sintered in different ways. The crystalline phase composition varied from alfa/beta sialon at x=0.2 to alfa sialon at x=0.4 and alfa sialon + polytypes at x=0.8. The highest alfa-sialon content and density was obtained for x=0.4 with an excess of yttria after sintering 1h at 1750°C and post HIPing 1h at 1750°C and 200 MPa. No glass encapsualtion was needed as closed porosity was obtained in the sintering step. Less residual glass was also present after this processing than when just HIPing. Sintering without pressure, however was not enough to densify the material. Sintering experiments by HT-XRD and in a conventional furnace of an x=0.4 alfa-sialon composition without excess yttria, showed that the amount of alfa-sialon formed was relatively insensitive to small changes in composition. Assuming that the formation mechanisms during the early stages of sintering (first 90-120 min) did not change with time and temperature, therefore made it possible to determine the kinetics of alfa-sialon formation. The activation energy was estimated as 330 kJ/mol. The effect of additives on nitridation was studied by adding silica or additives for sialon formation (AlN, Al2O3, Y2O3, CaO) to silicon. Formation of silicon oxynitride in the case of silica additions and sialon in the case of sialon additions was then observed after nitriding. The amounts of sialon formed depended on the liquid phase properties of the different compositions and the nitriding conditions. Fast nitridation resulted in more sialon formation. By nitriding with different schedules it was shown that this formation could be controlled and also that the nitridation could be speeded up when additives were present. Large amounts of additives made the pore size distribution insensitive to nitriding gas composition. The presence of hydrogen in the gas, however, did increase the amount of reaction at low temperatures and thereby influenced the phase composition. Densification of the materials nitrided with silica present was not possible by pressureless sintering and standard glass encapsulated HIPing. Most of the nitrided sialon compositions, on the other hand, sintered well by most sintering methods used at temperatures of 1850°C, and resulted in homogeneous microstructures. Sinter HIPing rendered unusually elongated grains in the (alfa-sialon (x=0.4), while the beta-sialon (z=2) had high grain aspect ratios for all sintering methods. HIPing at 1750°C gave the highest densities in most cases but resulted in inhomogeneities in the alfa-sialon. These looked very similar to inhomogeneities obtained when AlN additive powder with larger grain sizes was used. This work shows that nitridation with subsequent sintering of sialon compositions is a very promising way of manufacturing high performance structural ceramics based on silicon nitride.

Godkänd; 1995; 20070428 (ysko)

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Zbyryn, E. M. "Properties of GaN Films Obtained by Nitridation of Porous GaP (001)." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34882.

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With the help of nitridation of porous GaP (001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaP substrate. XPS spectra were used to investigate the chemical composition of porous GaP substrates, obtained by electrochemical etching. From XPS measurement we determined that the annealing in atomic nitrogen leads to the formation of GaN films. X-ray diffraction measurements show that cubic GaN on porous GaP substrate has no tensile strain When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34882
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Lan, Song. "High Temperature Nitridation of Powder and Nanocomposite Iron-based Magnetic Alloys." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1527853642053372.

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Fletcher, Joseph Patrick III. "Structural investigations of phosphate and aluminofluorophosphate glasses with and without nitridation." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184778.

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Knowledge of the structural arrangement of the atoms in a solid is an important prerequisite to a detailed understanding of physical and chemical properties. In this work, structural investigations of phosphate (Ca-P-O) and aluminofluorophosphate (Na/Ba-Al-P-O-F) glasses with and without nitridation were performed. Nitrogen was introduced via metal nitrides (AlN, Ba₃N₂, or Ca₃N₂) or ammonia gas treatment of the melt. These glasses were characterized by chemical, thermal and optical techniques. Infrared, Raman, and MASS NMR spectroscopies were used to determine the local coordination and atomic structure of these glasses. The presence of peaks corresponding to P-O-P and PO₂ molecular vibrations in Ca-P-O glasses provided a basis for proposing a calcium metaphosphate glass structure comprised of long chains. As calcium oxide is added to calcium metaphosphate glasses, the long chains are broken up into shorter pyrophosphate units, as indicated by the presence of PO₃²⁻ terminal groups. MASS NMR of Ba-Al-P-O glasses showed that Al occurs as Al(4), Al(6), and either Al(5) or Al(6) linked through Al-O-Al bonds (such as in α-Al₂O₃). The addition of F in both the Ba-Al-P-O-F and Na-Al-P-O-F systems increases the relative abundance of Al(6). The ³¹P peak maxima in the MASS NMR spectra at about -5 to -10 ppm for Ba-Al-P-O-F-N glasses and -9 to -17 for Na-Al-P-O-F-N glass, indicate that pyrophosphate units dominate the structure of these glassy solids. Raman spectroscopy of a series of Al(PO₃)₃-NaF glasses showed that an increase in NaF content causes a shortening of the P-O-P chains and a more disrupted structural network. The presence of P-O-F units were observed only at the higher (>80 mole %) NaF contents. While the complexity of the Raman spectra make it difficult to confirm the presence of P-N bonding, glasses prepared in an ammonia atmosphere (nitrogen content of 1.6 wt%) suggest the possibility of P-N bonding on the basis of a vibrational peak at 826 cm⁻¹.
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Books on the topic "Nitridation"

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T, Bhatt Ramakrishna, and United States. National Aeronautics and Space Administration., eds. The effect of polymer char on nitridation kinetics of silicon. [Washington, DC]: National Aeronautics and Space Administration, 1994.

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T, Bhatt Ramakrishna, and United States. National Aeronautics and Space Administration., eds. The effect of polymer char on nitridation kinetics of silicon. [Washington, DC]: National Aeronautics and Space Administration, 1994.

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J, Grabke H., Schütze Michael, European Federation of Corrosion, and Institute of Materials, Minerals, and Mining., eds. Corrosion by carbon and nitrogen: Metal dusting, carburisation and nitridation. Cambridge: Woodhead and Maney for European Federation of Corrosion on behalf of Institute of Materials, Minerals & Mining, 2007.

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Center, Lewis Research, ed. Effects of surface area, polymer char, oxidation, and NiO additive on nitridation kinetics of silicon powder compacts. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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(Editor), H. Grabke, and M. Schutze (Editor), eds. Corrosion by carbon and nitrogen: Metal dusting, carburisation and nitridation (EFC 41) (European Federation Corrosion Pubns). CRC, 2007.

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Jovanovic, Zoran R. Kinetic study on the production of silicon nitride by direct nitridation of silicon in a fluidized bed: Experiment and modeling. 1994.

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Book chapters on the topic "Nitridation"

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Bäuerle, Dieter. "Oxidation, Nitridation." In Laser Processing and Chemistry, 450–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03253-4_26.

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Aardahl, C. L., and J. W. Rogers. "Carbidization/Nitridation." In Inorganic Reactions and Methods, 90. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145333.ch52.

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Bäuerle, Dieter. "Oxidation, Nitridation, and Reduction." In Laser Processing and Chemistry, 581–604. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-17613-5_26.

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El-Kareh, Badih. "Thermal Oxidation and Nitridation." In Fundamentals of Semiconductor Processing Technology, 39–85. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2209-6_2.

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Bäuerle, Dieter. "Oxidation, Nitridation, and Reduction." In Advanced Texts in Physics, 535–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-662-04074-4_26.

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Boyd, Ian W. "Laser-Assisted Oxidation and Nitridation." In Laser Processing of Thin Films and Microstructures, 134–89. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83136-2_4.

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Borisenko, Victor E., and Peter J. Hesketh. "Rapid Thermal Oxidation and Nitridation." In Rapid Thermal Processing of Semiconductors, 193–252. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4899-1804-8_6.

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Cheong, Kuan Yew, and Yew Hoong Wong. "Surface Modification of Semiconductor by Simultaneous Thermal Oxidation Oxidation See Nitridation and Nitridation." In Handbook of Manufacturing Engineering and Technology, 2997–3029. London: Springer London, 2014. http://dx.doi.org/10.1007/978-1-4471-4670-4_47.

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Lei, B. Q., D. Ashkin, T. Johansson, and T. Lindbäck. "Optimization of the Silicon Nitridation Process." In 4th International Symposium on Ceramic Materials and Components for Engines, 633–40. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2882-7_69.

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Myhre, Bjørn, and Ketil Motzfeldt. "Kinetics of the Nitridation of Silicon." In The Physics and Chemistry of Carbides, Nitrides and Borides, 29–44. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2101-6_3.

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Conference papers on the topic "Nitridation"

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Aoki, Naoko, Toshimitsu Akane, Koji Sugioka, Koichi Toyoda, Jan J. Dubowski, and Katsumi Midorikawa. "Pulsed laser nitridation of InP." In First International Symposium on Laser Precision Microfabrication (LPM2000), edited by Isamu Miyamoto, Koji Sugioka, and Thomas W. Sigmon. SPIE, 2000. http://dx.doi.org/10.1117/12.405737.

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Aritome, Seiichi, Mizuho Morita, and Masataka Hirose. "Low-Temperature Nitridation of Fluorinated Oxide." In 1985 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1985. http://dx.doi.org/10.7567/ssdm.1985.c-2-5.

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Morita, Yukinori, Takao Ishida, and Hiroshi Tokumoto. "Monolayer Nitridation of Si(001) Surfaces." In 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.b-6-5.

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Li, Yanhui, Li Wang, Shaowu Yin, Fuming Yang, Chuanping Liu, Lige Tong, and Ping Wu. "Study on Nitridation of Silicon Added With Amorphous Silicon Nitride." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-64813.

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The direct nitridation process of silicon added with amorphous silicon nitride powder at atmospheric pressure was investigated and the product was analyzed by XRD and SEM. Based on the relationship between the conversion ratio of silicon and the reaction time at different temperatures, a physical and mathematical model was derived to describe the nitridation process of silicon particles. The results showed that the conversion ratio of silicon increased rapidly at the early stage of reaction. And the reaction would be accelerated by reducing the size of silicon particle and increasing the pressure of N2. At the range of experimental temperature, the conversion ratio of silicon increases with improving temperature.
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Suzuki, Toshiyuki, Kazuhisa Fujita, and Takeharu Sakai. "Graphite Nitridation in Lower Surface Temperature Regime." In 47th AIAA Aerospace Sciences Meeting including The New Horizons Forum and Aerospace Exposition. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2009. http://dx.doi.org/10.2514/6.2009-260.

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Ponticaud, C., Alain Grimaud, Alain Denoirjean, Pierre Lefort, and Pierre Fauchais. "TITANIUM POWDER NITRIDATION BY REACTIVE PLASMA SPRAYING." In Progress in Plasma Processing of Materials, 2001. Connecticut: Begellhouse, 2023. http://dx.doi.org/10.1615/itppc-2000.690.

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Kuroi, T., S. Shirahata, Y. Okumura, S. Shimizu, A. Teramoto, M. Anma, M. Inuishi, and T. Hirao. "Clarification of Nitridation Effect on Oxidation Methods." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.s-i-2-5.

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Liu, C. H., Y. M. Lin, D. Y. Yin, G. H. Tseng, H. W. Liaw, H. C. Wei, S. H. Chen, et al. "Bottom Nitridation Engineering of Multi-Nitridation ONO Interpoly Dielectric for Highly Reliable and High Performance NAND Flash Memory." In 2009 IEEE International Memory Workshop (IMW). IEEE, 2009. http://dx.doi.org/10.1109/imw.2009.5090583.

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Ye, Shuai, and Yujie Cao. "Structure of iron nitrides under different nitridation temperatures." In 2016 4th International Conference on Advanced Materials and Information Technology Processing (AMITP 2016). Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/amitp-16.2016.2.

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Suzuki, Toshiyuki, Kazuhisa Fujita, and Takeharu Sakai. "Observation of Graphite Nitridation in High Enthalpy Wind Tunnel." In 39th AIAA Thermophysics Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2007. http://dx.doi.org/10.2514/6.2007-4402.

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Reports on the topic "Nitridation"

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R. Suplinskas G. DiBona and W. Grant. Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation. Office of Scientific and Technical Information (OSTI), October 2001. http://dx.doi.org/10.2172/791414.

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Kiggans, J. O., B. Mikijelj, and T. N. Tiegs. Sintered Reaction Bonded Silicon Parts by Microwave Nitridation Combined with Gas-Pressure Sintering. Office of Scientific and Technical Information (OSTI), January 1999. http://dx.doi.org/10.2172/3142.

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Kiggans, J. O. Jr, T. N. Tiegs, C. C. Davisson, M. S. Morrow, and G. J. Garvey. Scale-up of the nitridation and sintering of silicon preforms using microwave heating. Office of Scientific and Technical Information (OSTI), May 1996. http://dx.doi.org/10.2172/238557.

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Edler, J., J. O. Kiggans, A. W. Suman, and T. N. Tiegs. Microwave Nitridation of Sintered Reaction Bonded Silicon Parts for Natural Gas Fueled Diesel Engines. Office of Scientific and Technical Information (OSTI), January 1999. http://dx.doi.org/10.2172/3140.

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Tiegs, T. N., J. O. Kiggans, and G. A. Garvey. Scale-up of microwave nitridation of sintered reaction bonded silicon nitride parts. Final report. Office of Scientific and Technical Information (OSTI), October 1997. http://dx.doi.org/10.2172/539892.

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You might also be interested in the extended bibliographies on the topic 'Nitridation' for particular source types:
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