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Journal articles on the topic 'NiMnGa Thin Films'

Author: Grafiati

Published: 6 September 2023

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1

Vovk, Andriy, Leszek Malkinski, Vladimir Golub, Charles O’Connor, Zhenjun Wang, and Jinke Tang. "Magnetotransport in NiMnGa thin films." Journal of Applied Physics 97, no. 10 (May 15, 2005): 10C503. http://dx.doi.org/10.1063/1.1847411.

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2

Golub, Vladimir O., Andriy Ya Vovk, Leszek Malkinski, Charles J. O’Connor, Zhenjun Wang, and Jinke Tang. "Anomalous magnetoresistance in NiMnGa thin films." Journal of Applied Physics 96, no. 7 (October 2004): 3865–69. http://dx.doi.org/10.1063/1.1771474.

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3

Żuberek, R., O. M. Chumak, A. Nabiałek, M. Chojnacki, I. Radelytskyi, and H. Szymczak. "Magnetocaloric effect and magnetoelastic properties of NiMnGa and NiMnSn Heusler alloy thin films." Journal of Alloys and Compounds 748 (June 2018): 1–5. http://dx.doi.org/10.1016/j.jallcom.2018.03.061.

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4

Hakola, A., O. Heczko, A. Jaakkola, T. Kajava, and K. Ullakko. "Pulsed laser deposition of NiMnGa thin films on silicon." Applied Physics A 79, no. 4-6 (September 2004): 1505–8. http://dx.doi.org/10.1007/s00339-004-2831-7.

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5

Zhu, T. J., L. Lu, M. O. Lai, and J. Ding. "Growth and magnetic properties of NiMnGa thin films prepared by pulsed laser ablation." Smart Materials and Structures 14, no. 5 (August 24, 2005): S293—S296. http://dx.doi.org/10.1088/0964-1726/14/5/018.

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6

Sharma, Amit, S. Mohan, and Satyam Suwas. "Development of bi-axial preferred orientation in epitaxial NiMnGa thin films and its consequence on magnetic properties." Acta Materialia 113 (July 2016): 259–71. http://dx.doi.org/10.1016/j.actamat.2016.04.037.

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7

Yang, Bo, Zong Bin Li, Yu Dong Zhang, Claude Esling, Gao Wu Qin, Xiang Zhao, and Liang Zuo. "Identification of Crystal Structure and Crystallographic Features of NiMnGa Thin Films by Combination of X-Ray Diffraction (XRD) and Electron Backscatter Diffraction (EBSD)." Materials Science Forum 783-786 (May 2014): 2561–66. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.2561.

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In this work, NiMnGa thin film composed of non-modulated martensite (NM) and seven-layered modulated martensite (7M) was produced. The crystal structure and lattice constants were determined by X-ray diffractometer (XRD). The preferred crystallographic orientation of martensite was determined using the four-circle XRD. SEM/EBSD was employed to verify the crystal structure of the martensite and to reveal its crystallographic features correlated with the microstructure. According to the XRD patterns, the crystal structure of NM and 7M was determined as tetragonal and monoclinic crystal structure, respectively. Pole figures measured by four-circle diffractometer revealed that the NM martensite possesses (004)NM and (220)NM preferred plane texture close to the substrate surface, whereas the 7M martensite has (2 0 20)7M, (2 0 )7M and (040)7M preferred plane texture close to the substrate surface. SEM/EBSD analysis shows that the surface layer of the film is mainly composed of NM martensite that is organized in variant groups. In each variant group, all the martensite plates consist of paired lamellar (112)NM compound twins and there are eight orientation variants in each variant group.

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8

Vovk, Andriy, Minghui Yu, Leszek Malkinski, Charles O’Connor, Zhenjun Wang, Eden Durant, Jinke Tang, and Vladimir Golub. "Magnetic and transport properties of NiMnAl thin films." Journal of Applied Physics 99, no. 8 (April 15, 2006): 08R503. http://dx.doi.org/10.1063/1.2166609.

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9

Caballero, J. A., W. J. Geerts, J. R. Childress, F. Petroff, P. Galtier, J. U. Thiele, and D. Weller. "Magneto-optical properties of sputter-deposited NiMnSb thin films." Applied Physics Letters 71, no. 16 (October 20, 1997): 2382–84. http://dx.doi.org/10.1063/1.120035.

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10

Öner, Y., C. S. Lue, Joseph H. Ross, K. D. D. Rathnayaka, and D. G. Naugle. "Thermomagnetic hysteresis effects in NiMn and NiMnPd thin films." Journal of Applied Physics 89, no. 11 (June 2001): 7044–46. http://dx.doi.org/10.1063/1.1362650.

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11

Caballero, J. A., W. J. Geerts, F. Petroff, J. U. Thiele, D. Weller, and J. R. Childress. "Magnetic and magneto-optical properties of NiMnSb thin films." Journal of Magnetism and Magnetic Materials 177-181 (January 1998): 1229–30. http://dx.doi.org/10.1016/s0304-8853(97)00627-6.

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12

Ristoiu, D., J. P. Nozières, and L. Ranno. "Epitaxial NiMnSb thin films prepared by facing targets sputtering." Journal of Magnetism and Magnetic Materials 219, no. 1 (August 2000): 97–103. http://dx.doi.org/10.1016/s0304-8853(00)00003-2.

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13

Giapintzakis, J., C. Grigorescu, A. Klini, A. Manousaki, V. Zorba, J. Androulakis, Z. Viskadourakis, and C. Fotakis. "Pulsed-laser deposition of NiMnSb thin films at moderate temperatures." Applied Surface Science 197-198 (September 2002): 421–25. http://dx.doi.org/10.1016/s0169-4332(02)00353-7.

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14

Branford, W. R., S. K. Clowes, M. H. Syed, Y. V. Bugoslavsky, S. Gardelis, J. Androulakis, J. Giapintzakis, et al. "Large positive magnetoresistance in nonstoichiometric NiMnSb thin films on silicon." Applied Physics Letters 84, no. 13 (March 29, 2004): 2358–60. http://dx.doi.org/10.1063/1.1691172.

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15

Wang, Hai Bo, Li Ma, and Wei Cai. "Effect of Annealing Conditions on Microstructure Evolution of NiMnFeGa Shape Memory Thin Film." Advanced Materials Research 150-151 (October 2010): 1745–49. http://dx.doi.org/10.4028/www.scientific.net/amr.150-151.1745.

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The microstructure evolution of sputtered polycrystalline Ni54.75Mn13.25Fe7Ga25 ferromagnetic shape memory thin film annealed under different conditions is studied. Microstructure of different annealed films was studied using Transmission Electron Microscope (TEM) and corresponding selected area electron diffraction (SAED) patterns. The result shows that in the microstructure of as-deposited Ni54.75Mn13.25Fe7Ga25 free-standing film, after annealed at 1073 K for different time, the crystalline grain grows up with the increase of the annealing time. By analysis of the SAED patterns, the structure of the thin films change from face-centered cubic austenite to orthorhombic structure martensite compared between the film annealed at 1073 K for 10 mins, 1hr, 4 hrs, and 24 hrs respectively. It indicated that the heat treatment is an effective method of crystallizing behavior for the thin film.

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16

Srivastava, Vijay Kumar, Saurabh Srivastava, and Ratnamala Chatterjee. "Structural and Magnetic Properties of Off-Stochiometric Ni-Mn-Al Heusler Alloy Thin Film." Solid State Phenomena 136 (February 2008): 139–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.136.139.

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The initials results on growth and structural properties of Ni-Mn-Al full Heusler alloy thin films on silicon substrates deposited by RF magnetron sputtering is reported in this paper. Good crystallinity in the film is obtained by optimizing the sputtering parameters. The as-deposited film was post-annealed in vacuum in the temperature range between 150 °C, 250 °C and 450 °C for 60 min. It is observed that as deposited film shows nanocrystalline in nature. The film annealed at 450 °C shows L21 structure. The magnetic properties of the NiMnAl films at room temperature are measured by vibrating sample magnetometer [VSM]. It is found that the annealed samples shows clear saturating loop whereas the as prepared film is paramagnetic in nature.

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17

Hong, J., J. A. Caballero, W. Geerts, J. R. Childress, and S. J. Pearton. "Dry and Wet Etch Processes for NiMnSb Heusler Alloy Thin Films." Journal of The Electrochemical Society 144, no. 10 (October 1, 1997): 3602–8. http://dx.doi.org/10.1149/1.1838055.

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18

Giapintzakis, J., C. Grigorescu, A. Klini, A. Manousaki, V. Zorba, J. Androulakis, Z. Viskadourakis, and C. Fotakis. "Low-temperature growth of NiMnSb thin films by pulsed-laser deposition." Applied Physics Letters 80, no. 15 (April 15, 2002): 2716–18. http://dx.doi.org/10.1063/1.1469211.

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19

Caballero, J. A., Y. D. Park, A. Cabbibo, J. R. Childress, F. Petroff, and R. Morel. "Deposition of high-quality NiMnSb magnetic thin films at moderate temperatures." Journal of Applied Physics 81, no. 6 (March 15, 1997): 2740–44. http://dx.doi.org/10.1063/1.363977.

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20

Ristoiu, D., J. P. Nozières, C. N. Borca, T. Komesu, H. k. Jeong, and P. A. Dowben. "The surface composition and spin polarization of NiMnSb epitaxial thin films." Europhysics Letters (EPL) 49, no. 5 (March 1, 2000): 624–30. http://dx.doi.org/10.1209/epl/i2000-00196-9.

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21

Apostolov, A. T., I. N. Apostolova, and J. M. Wesselinowa. "The magnetoelectric effect in thin films of ferromagnetic semiconductor La2 NiMnO6." physica status solidi (b) 251, no. 6 (April 19, 2014): 1219–24. http://dx.doi.org/10.1002/pssb.201350307.

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22

Caminat, P., E. Valerio, M. Autric, C. Grigorescu, and O. Monnereau. "Double beam pulse laser deposition of NiMnSb thin films at ambient temperature." Thin Solid Films 453-454 (April 2004): 269–72. http://dx.doi.org/10.1016/j.tsf.2003.11.146.

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23

Anh Tuan, Nguyen, and Nguyen Phuc Duong. "Structural, magnetic, and magnetotransport properties of NiMnSb thin films deposited by flash evaporation." Applied Physics Letters 99, no. 16 (October 17, 2011): 162507. http://dx.doi.org/10.1063/1.3651337.

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24

Mancoff, F. B., B. M. Clemens, E. J. Singley, and D. N. Basov. "Infrared probe of the electronic structure and carrier scattering in NiMnSb thin films." Physical Review B 60, no. 18 (November 1, 1999): R12565—R12568. http://dx.doi.org/10.1103/physrevb.60.r12565.

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25

Caballero, J. A., Y. D. Park, A. Cabbibo, and J. R. Childress. "Sputter-deposition of NiMnSb magnetic thin films from a composite target onto Si substrates." Journal of Electronic Materials 26, no. 11 (November 1997): 1274–78. http://dx.doi.org/10.1007/s11664-997-0069-9.

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26

Gardelis, S., J. Androulakis, Z. Viskadourakis, E. L. Papadopoulou, J. Giapintzakis, S. Rai, G. S. Lodha, and S. B. Roy. "Magneto-transport properties of NiMnSb thin films on InSb single crystals: Negative giant magnetoresistance." physica status solidi (a) 204, no. 1 (January 2007): 92–98. http://dx.doi.org/10.1002/pssa.200673003.

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27

Bobo, J. F., P. R. Johnson, M. Kautzky, F. B. Mancoff, E. Tuncel, R. L. White, and B. M. Clemens. "Optical spectroscopy investigations of half metallic ferromagnetic Heusler alloy thin films: PtMnSb, NiMnSb, and CuMnSb." Journal of Applied Physics 81, no. 8 (April 15, 1997): 4164–66. http://dx.doi.org/10.1063/1.365167.

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28

Gardelis, S., J. Androulakis, J. Giapintzakis, O. Monnereau, and P. D. Buckle. "Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition." Applied Physics Letters 85, no. 15 (October 11, 2004): 3178–80. http://dx.doi.org/10.1063/1.1807026.

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29

Arivanandhan, Gowtham, Zixiong Li, Sabrina Curtis, Prasanth Velvaluri, Eckhard Quandt, and Manfred Kohl. "Temperature Homogenization of Co-Integrated Shape Memory—Silicon Bimorph Actuators." Proceedings 64, no. 1 (November 20, 2020): 8. http://dx.doi.org/10.3390/iecat2020-08501.

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The high work density and beneficial downscaling of shape memory alloy (SMA) actuation performance provide a basis for the development of actuators and systems at microscales. Here, we report a novel monolithic fabrication approach for the co-integration of SMA and Si microstructures to enable SMA-Si bimorph microactuation. Double-beam cantilevers are chosen for the actuator layout to enable electrothermal actuation by Joule heating. The SMA materials under investigation are NiMnGa and NiTi(Hf) films with tunable phase transformation temperatures. We show that Joule heating of the cantilevers generates increasing temperature gradients for decreasing cantilever size, which hampers actuation performance. In order to cope with this problem, a new method for design optimization is presented based on finite element modeling (FEM) simulations. We demonstrate that temperature homogenization can be achieved by the design of additional folded beams in the perpendicular direction to the active beam cantilevers. Thereby, power consumption can be reduced by more than 35 % and maximum deflection can be increased up to a factor of 2 depending on the cantilever geometry.

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30

Gardelis, S., J. Androulakis, O. Monnereau, P. D. Buckle, and J. Giapintzakis. "Possible use of the half-Hausler alloy NiMnSb in spintronics: synthesis and physical properties of arc melted NiMnSb and of NiMnSb thin films grown on InSb by pulsed laser deposition." Journal of Physics: Conference Series 10 (January 1, 2005): 167–70. http://dx.doi.org/10.1088/1742-6596/10/1/041.

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31

Kirthika, P., and N. Thangaraj. "Modulating the hardness and magnetic property of NiMnWP by an organosulphur additive for magnetic storage applications." Digest Journal of Nanomaterials and Biostructures 16, no. 3 (July 2021): 855–62. http://dx.doi.org/10.15251/djnb.2021.163.855.

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In this present investigation, we subjected a user friendly electrodeposition method to develop an NiMnWP thin film for magnetic storage devices .The key point of the research work is to enrich the mechanical and magnetic property by varying the deposition time, bath temperature and adding an organic additive. The NiMnWP magnetic thin film without and with thiourea of 2gm/l is developed and their characteristics were studied. The XRD peak confirms the presence of NiWP with an End centered monoclinic structure with the plane (820),(622) and manganese with (422) cubic plane. The crystallite size varies from 18.58 to 16.84 nm without thiourea and 19.83 to 12.33nm with thiourea. The hardness is found to be enhanced due to the addition of thiourea from 102 to 128, where as the other from 91.4 to 101.8.There is an considerable amount of enhancement in magnetization from 4.53 to 22.304x10-3 emu and retentivity from 1.2500 to 6.34x10-3 emu due to the addition of thiourea. From our experimental work analysis a better magnetic thin films were obtained, to be used in MEMS and magnetic storage devices.

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32

Hong, J., J. A. Caballero, E. S. Lambers, J. R. Childress, and S. J. Pearton. "Comparison of Cl2 and F2 based chemistries for the inductively coupled plasma etching of NiMnSb thin films." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17, no. 4 (July 1999): 1326–30. http://dx.doi.org/10.1116/1.581815.

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33

Childress, J. R., J. A. Caballero, W. J. Geerts, F. Petroff, P. Galtier, Y. Suzuki, J. U. Thiele, and D. Weller. "Low-Temperature Growth of NiMnSb Heusler Alloy Thin Films." MRS Proceedings 475 (1997). http://dx.doi.org/10.1557/proc-475-15.

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ABSTRACTFerromagnetic Heusler alloys such as NiMnSb may have unique applications to magnetoresistive devices because of their predicted half-metallic band-structure (i.e., 100% spin-polarized at the Fermi level). However, the high temperatures (>500°C) used to date for the synthesis of the ordered alloy in bulk or thin-film form is incompatible with the reliable fabrication of nanoscale multilayer structures from this material. We report on the growth of high-quality polycrystalline thin films, 200–1000Å thick, of Clb-structured NiMnSb by RF-magnetron sputtering of a composite NiMnSb target onto glass and silicon substrates at temperatures as low as 250°C. We have established that substrate temperature, deposition rate and argon gas pressures all play a critical role in obtaining the Clb-structured phase by direct deposition. Optimal conditions result in films whose properties, including lattice parameter, saturation magnetization, resistivity and magneto-optical Kerr rotation spectrum are identical to those of bulk NiMnSb. Additionally, coercive fields as low as a few oersteds make these films compatible with low-field applications.

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34

Turban, P., S. Andrieu, B. Kierren, E. Snoeck, C. Teodorescu, and A. Traverse. "Growth and characterization of single crystalline NiMnSb thin films and epitaxial NiMnSb/MgO/NiMnSb(001) trilayers." Physical Review B 65, no. 13 (March 19, 2002). http://dx.doi.org/10.1103/physrevb.65.134417.

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35

Turban, Pascal, Stéphane Andrieu, Alberto Tagliaferri, Céline De Nadai, and Nike Brookes. "The use of NiMnSb Heusler alloy in MBE Grown Tunnel Junction." MRS Proceedings 690 (2001). http://dx.doi.org/10.1557/proc-690-f4.3.

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ABSTRACTIn this paper, the structural, magnetic and electronic properties of single-crystalline NiMnSb thin films grown by molecular beam epitaxy are presented. The growth process and surface morphology were studied by RHEED and STM. The structural quality of the films was investigated by EXAFS and HRTEM. For the optimized growth conditions, the expected NiMnSb C1b structure was obtained. Moreover, the most stable surface was found to be 4x1 reconstructed. The magnetic and electronic properties were studied by X-ray magnetic circular dichroïsm and spin-resolved x-ray photoemission spectroscopy experiments. The magnetization was observed to be essentially due to Mn, in agreement with theory. The surface was not found to be fully polarized but a polarization near 50% at room temperature was observed. Finally, the preparation of fully epitaxial NiMnSb/MgO/NiMnSb(001) trilayers is presented.

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36

Hong, J., J. J. Wang, E. S. Lambers, J. A. Caballero, J. R. Childress, S. J. Pearton, K. H. Dahmen, S. Von Molnar, F. J. Cadieu, and F. Sharifi. "Dry and Wet Etch Processes for NiMnSb, LaCaMnO3 and Related Materials." MRS Proceedings 494 (1997). http://dx.doi.org/10.1557/proc-494-3.

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ABSTRACTA variety of plasma etching chemistries were examined for patterning NiMnSb Heusler thin films and associated A12O3 barrier layers. Chemistries based on SF6 and Cl2 were all found to provide faster etch rates than pure Ar sputtering. In all cases the etch rates were strongly dependent on both the ion flux and ion energy. Selectivities of ≥20 for NiMnSb over A12O3 were obtained in SF6-based discharges, while selectivities ≤5 were typical in Cl2 and CH4/H2 plasma chemistries. Wet etch solutions of HF/H2O and HNO3/H2SO4/H2O were found to provide reaction-limited etching of NiMnSb that was either non-selective or selective, respectively, to A12O3. In addition we have developed dry etch processes based on Cl2/Ar at high ion densities for patterning of LaCaMnO3 (and SmCo permanent magnet biasing films) for magnetic sensor devices. Highly anisotropie features are produced in both materials, with smooth surface morphologies. In all cases, SiO2 or other dielectric materials must be used for masking since photoresist does not retain its geometrical integrity upon exposure to the high ion density plasma.

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37

Dürrenfeld, P., F. Gerhard, J. Chico, R. K. Dumas, M. Ranjbar, A. Bergman, L. Bergqvist, et al. "Tunable damping, saturation magnetization, and exchange stiffness of half-Heusler NiMnSb thin films." Physical Review B 92, no. 21 (December 16, 2015). http://dx.doi.org/10.1103/physrevb.92.214424.

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38

Hassdorf, R., J. Feydt, S. Thienhaus, R. Borowski, M. Boese, T. Walther, and M. Moske. "Combinatorial Thin Film Synthesis of NiMnAl Magnetic Shape Memory Alloys Using MBE Technique." MRS Proceedings 785 (2003). http://dx.doi.org/10.1557/proc-785-d2.3.

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ABSTRACTComposition spreads close to the Heusler alloy Ni2MnAl were grown onto 4-inch wafer substrates using molecular beam epitaxy. Compositional variations of up to 10 at.% relative to each constituent enable a direct comparison of the chemical-structural relationship with respect to martensitic transformation and to magnetic ordering as well as an efficient identification of the emerging phase stability regions. In this study, we set the primary focus on the structural aspects of the transformation behavior as observed by X-ray microdiffraction in combination with a specially designed heating stage. Notably, cross-sectional HRTEM imaging of the respective composition areas reveals a laminated two-phase martensitic structure inside the single grains, identified as a sequence of 2M and 14M variants. Stress relief upon transformation as observed by mechanical stress measurements reaches to 400 MPa depending on the composition. Magnetization measurements so far indicate field-induced ordering to occur at low temperatures, here, below 50 K which is assumed to be closely related to a high degree of structural disorder on the Mn-Al sublattice. Single-crystal thin films were realized by means of an epitaxial relationship to MgO (001).

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39

Rai, S., M. K. Tiwari, G. S. Lodha, M. H. Modi, M. K. Chattopadhyay, S. Majumdar, S. Gardelis, et al. "Surface and interface study of pulsed-laser-deposited off-stoichiometric NiMnSb thin films on a Si(100) substrate." Physical Review B 73, no. 3 (January 10, 2006). http://dx.doi.org/10.1103/physrevb.73.035417.

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40

Kaushlendra, Kumar, Pradeep Kumar, Diksha Arora, Bhanu Ranjan, and Davinder Kaur. "Remotely tuned multistate resistive switching in MoS2/NiMnIn thin film heterostructure for highly flexible ReRAM application." Ceramics International, November 2022. http://dx.doi.org/10.1016/j.ceramint.2022.11.122.

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41

Anderson, Geoff, Yiming Huai, and Lena Miloslavsky. "Spin-Valve GMR Films Based on Antiferromagnetic NiMn." MRS Proceedings 562 (1999). http://dx.doi.org/10.1557/proc-562-45.

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ABSTRACTIn this work we have investigated the magnetic and structural properties of spin-valve films exchange biased by CoFe/NiMn compared to CoFe/lrMn spin valves. A spin-valve film of structure Ta/NiFe/CoFe/Cu/CoFe/NiMnITa showed a giant-magnetoresistance of 5.5% with a Hex∼850 Oe after annealing. Structural ordering of the NiMn in an fct phase after annealing has been observed using x-ray diffraction, with the data exhibiting pure fct(111) texture. The thermal stability of both the exchange pinning and magnetoresistance of NiMn spin-valves was evaluated. The blocking temperature (Tb) of this film is 400°C, compared to 225°C for IrMn based spin-valve films (IrMn thickness ∼50 Å). Blocking temperature distribution and remnant blocking temperature measurements also suggest that NiMn based spin-valves have far superior pinning stability with temperature than IrMn based spin-valves. Magnetoresistance measurements show a linear decrease with temperature due to electron-phonon scattering with the ∆R/R being reduced by 33% at 150°C (as compared to a 50% decrease for IrMn based spinvalves). Extended annealing at 150°C did not effect spin-valve performance, with ∆R/R and R being constant over 60 hours, suggesting that no appreciable interdiffusion is occurring.

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42

Jain, Anchali, Amrish K. Panwar, and Pawan K. Tyagi. "Tuning the electrical and cycling performance of nickel manganese oxide hexagonal-shaped particles via preparation routes for Lithium-ion Batteries." Journal of Physics D: Applied Physics, June 9, 2023. http://dx.doi.org/10.1088/1361-6463/acdd0d.

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Abstract In this study, simple and effective solid-state and sol-gel routes are attempted to synthesize Nickel Manganese Oxide, NiMn2O4 (NMO). Structural, morphological, electrical, and electrochemical properties are investigated with calcination temperatures. XRD results confirm the highly crystalline cubic spinel structure with zero impurities for all samples, except NMOS_700, which indicates the presence of a slight NiMnO3 phase. SEM and TEM micrographs confirm the formation of hexagonal shape particles of size less than <0.5μm. At low calcination temperatures, grouped and uneven-shaped particles are observed with increased particle size. Electrical measurements depict the strong dependence of conductivities (σac and σdc) on grain size, grain boundary, and operating temperature. All the samples exhibit conductivities between 10-8 - 10-4 S/cm with the varied calcination temperature. Electrochemical performances are explored via Electrochemical Impedance Spectroscopy (EIS), Cyclic Voltammetry (CV), and Galvanostatic Charge-Discharge (GCD) profiles. Sample NMOB_700 and NMOB_800 exhibit the initial discharging capacity of 1104 and 1188 mAh g-1 at 100 mA g-1 current density. All the samples exhibit above 98% columbic efficiency after two initial cycles and show the reversible nature of NiMn2O4 and excellent cyclability. The electrochemical results confirm that preparation methods and calcination temperature have a great impact on the grain properties of materials. Multiple oxidation states of Mn and Ni is also confirmed through the XPS study.

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