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Published: 6 September 2023

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Journal articles on the topic "Ni-Cr Thin Films"

Sethuraman, A. R., R. J. De Angelis, and P. J. Reucroft. "Diffraction studies on Ni–Co and Ni–Cr alloy thin films." Journal of Materials Research 6, no. 4 (April 1991): 749–54. http://dx.doi.org/10.1557/jmr.1991.0749.

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Alloy films of Ni–Co and Ni–Cr of compositional ratios 1:1, 1:3, and 3:1 deposited by vapor deposition were studied by Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD). Results of TEM analysis on the Ni–Co alloy films indicated that the films were face-centered cubic (fcc) in structure. XRD results confirmed the TEM observations. TEM analysis of Ni–Cr alloy films showed that the films were body-centered cubic (bcc) in structure. With increase in the Cr content more than 25%, the material contained a higher fraction of an amorphous phase. XRD studies provide limited information owing to the quasi-amorphous structure of the films of high Cr content.

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YAN, JIANWU, and JICHENG ZHOU. "THE OXIDATION AND THE ELECTRICAL PROPERTIES OF Ni–Cr THIN FILM AFTER RAPID THERMAL ANNEALING." International Journal of Modern Physics B 21, no. 26 (October 20, 2007): 4561–74. http://dx.doi.org/10.1142/s0217979207037934.

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By controlling the sputtering power, rotational speed of the substrate and sputtering time, Ni – Cr thin films with appropriate composition were fabricated by double-target magnetron co-sputtering techniques. The homogeneity and oxidation of Ni – Cr thin film has been studied by Auger electron spectroscopy (AES). The structures of Ni – Cr thin films were determined by an X-ray diffractometer (XRD). The oxidation and the resistance stability of the Ni – Cr thin film after rapid thermal process (RTP) have been studied. The relations between TCR and RTP techniques of Ni – Cr thin films were discussed.

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Lin, Ruei-Cheng, Tai-Kuang Lee, Der-Ho Wu, and Ying-Chieh Lee. "A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy." Advances in Materials Science and Engineering 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/847191.

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Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR).

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Stearns, M. B., and C. H. Lee. "Dimensional effects in Ni‐Cr multilayered thin films." Journal of Applied Physics 61, no. 8 (April 15, 1987): 4064–66. http://dx.doi.org/10.1063/1.338528.

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Vollaro, M. B., and D. I. Potter. "Phase formation in coevaporated NiCr thin films." Thin Solid Films 239, no. 1 (February 1994): 37–46. http://dx.doi.org/10.1016/0040-6090(94)90105-8.

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Cho, Ki-Hyun, and Youngman Kim. "Elastic modulus measurement of multilayer metallic thin films." Journal of Materials Research 14, no. 5 (May 1999): 1996–2001. http://dx.doi.org/10.1557/jmr.1999.0269.

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Two- and three-layer composite models were developed using a beam vibration theory, and the models were applied for measuring Young's moduli of thin metallic films. The Cr, Ni, and Co-coated Si wafer composites (two-layer composite) and (Cr/Ti/Si) composites (three-layer composite) were produced by radio-frequency (rf) magnetron sputtering and used to test the developed models. Young's moduli of (Cr) films obtained by the three-layer composite model agree well with those of (Cr) films obtained by the two-layer composite model, considering (Ti/Si) as the one layer and (Cr) as the other layer. This suggests that moduli of multilayer films may be obtained by using a two-layer composite model repeatedly.

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Zhou, Ji Cheng, and Jian Wu Yan. "Microstructure and Electrical Properties of Nano Ni-Cr Thin-Films Fabricated by Magnetron Co-Sputtering Techniques." Materials Science Forum 561-565 (October 2007): 1201–4. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.1201.

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The nano Ni-Cr thin-film samples with different composition have been fabricated by a double-target magnetron co-sputtering equipment, through controlling the sputtering power, the substrate rotate speed, and the substrate temperature, The results showed that the grains sizes with polycrystalline microstructure were not greater than 10 nm. The crystal microstructure of Ni-Cr thin-films is Face Centered Cubic (FCC). The dominant texture in the Ni-Cr film was Ni (111) under this sputtering condition. The lattice parameters of Ni crystal and the inter-planar distances of Ni (111) increased by Cr solid-soluble in Ni crystal. The surface morphology of the thin-film samples is smooth and compact. The TCR (temperature coefficient of resistance) value of specimen 3 was 84~130 ppm/k, which show the specimen 3 was the most stable.

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Cho, Nam Ihn, Se Jong Lee, Yo Seung Song, and Deuk Yong Lee. "Thermal Properties of Cr- and Ni- Silicide Thin Films." Solid State Phenomena 124-126 (June 2007): 189–94. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.189.

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Petley, Vijay, S. Sathishkumar, K. H. Thulasi Raman, G. Mohan Rao, and U. Chandrasekhar. "Microstructural and mechanical characteristics of Ni–Cr thin films." Materials Research Bulletin 66 (June 2015): 59–64. http://dx.doi.org/10.1016/j.materresbull.2015.02.002.

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Vinayak, Seema, H. P. Vyas, and V. D. Vankar. "Microstructure and electrical characteristics of Ni–Cr thin films." Thin Solid Films 515, no. 18 (June 2007): 7109–16. http://dx.doi.org/10.1016/j.tsf.2007.03.011.

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Dissertations / Theses on the topic "Ni-Cr Thin Films"

Kneiß, Max, Marcus Jenderka, Kerstin Brachwitz, Michael Lorenz, and Marius Grundmann. "Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films." American Institute of Physics, 2014. https://ul.qucosa.de/id/qucosa%3A31223.

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Electrical transport in undoped and Ni-, Cr-, and W-doped TiO2 thin films on SrTiO3(001) is modelled either with the sum of two thermally activated processes with exponential temperature dependence of conductivity, or with the sum of three-dimensional Mott variable-range hopping (VRH) and an activated process with low activation energy. The latter is interpreted for both models as small polaron hopping (<θD/4). According to reduced chi-square values, the double activated model is superior for data of higher ordered films grown at 540 and 460 °C. For lower growth temperature, VRH plus activated conductivity fits partly better. For all dopants, n-type conductivity is observed.

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Грищенко, Вікторія Андріївна. "Вплив йонного опромінення на структурно-фазові перетворення в тонких плівках Cu/Cr, Ni/Cr, Ni/Cu/Cr при термічному відпалі." Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/34696.

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Магістерська дисертація: 81 сторінка, 41 рисунків, 12 таблиць, 38 літературних джерел. Об’єкт досліджень:структурно-фазові перетворення в наношарових композиціях Cu/Cr, Ni/Cr, Ni/Cu/Cr за умов вакуумного термічного відпалу та з додатковою йонно-плазмовою обробкою. Мета роботи: дослідження особливостей впливу попередньої йонно-плазмової обробки на структурно-фазові перетворення у тонких плівках Cu/Cr, Ni/Cr, Ni/Cu/Crза умов термічного відпалу. Методи дослідження: мас-спектрометрія вторинних йонів, трансмісійна електронна мікроскопія, in-situ високоенергетична електронна дифракція. Досліджено особливості формування структури та фазового складу систем Cu/Cr, Ni/Cr та Ni/Cu/Cr при відпалі у вакуумі у широкому температурному інтервалі. Тонкоплівкові композиції були одержані шляхом термічного випаровування у вакуумі і, в подальшому, піддавалися йонно-плазмовій та термічній обробці до температур 690 °C. Після обробки плівки досліджено методами мас-спектрометрії вторинних йонів, трансмісійною електронною мікроскопією, in-situ високоенергетичною електронною дифракцією. Зафіксовано розвиток окисно-відновних процесів, які ефективно контролюються шляхом використання додаткового плазмового оброблення плівок. Йонний низькоенергетичний вплив стабілізує структуру досліджуваних систем шляхом гальмування процесів рекристалізації.
Master thesis: 81 pages, 41 figure, 12 tables, 38 references. The object of research is structural-phase transformations in nanolayer compositions Cu/Cr, Ni/Cr, Ni/Cu/Cr under conditions of vacuum thermal annealing and with additional ion-plasma action. The purpose is to study the peculiarities of the influence of preliminary ion plasma action on structural-phase transformations in thin films Cu/Cr, Ni/Cr, Ni/Cu/Cr under conditions of thermal annealing. Research methods: secondary-ion mass spectrometry, transmission electron microscopy, in-situ high-energy electron diffraction. The peculiarities of the formation of the structure and phase composition of the Cu/Cr, Ni/Cr and Ni/Cu/Cr systems during annealing in vacuum in a wide temperature range have been studied. The thin film compositions were obtained by thermal evaporation in vacuum and subsequently subjected to ion-plasma and heat treatment to temperatures of 690 °C. After processing the film, it was investigated by secondary-ion mass spectrometry, transmission electron microscopy, in-situ high-energy electron diffraction. The development of redox processes, which are effectively controlled by the use of additional plasma treatment of films, has been recorded. Ionic low-energy effect stabilizes the structure of the studied systems by inhibiting recrystallization processes.

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Krishnan, Subramanian. "Thin film metal-insulator-metal tunnel junctions for millimeter wave detection." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002759.

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Huang, Hou Jun, and 黃厚鈞. "A Study on the Properties of Cr Fe Co Ni Cu Alx High-Entropy Alloys Thin Films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/34480552402453487091.

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碩士
中國文化大學
材料科學與奈米科技研究所
96
Two high-entropy CrFeCoNiCuAl0.5 and CrFeCoNiCuAl1.0 alloy targets were prepared by arc-melting and vacuum induction melting processes. The thin films deposited on the oxidative Si substrates by PVD process, followed by heat treatment at different conditions. The microstructures and compositions of these thin films were analyzed by SEM with EDS, and the resistivity was measured by a four-point probe. Results indicated that the average thickness of the CrFeCoNiCuAl0.5 and CrFeCoNiCuAl1.0 were 0.87 and 0.92μm, respectively. All of these as-deposited thin films had a columnar structure, but these columnar structures would transform to fine granular structures after annealing. The resistivity of these thin films increased with increasing the annealing temperatures and annealing times, but the resistivity of these thin films decreased at initial stage of vacuum annealing because the defects would vanish during high-temperature annealing. Furthermore, the oxidation resistive of CrFeCoNiCuAl0.5 was better than that of CrFeCoNiCuAl1.0 film during high annealing. In addition, no very low resistivity (superconductivity) was observed in present study.

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Khan, Kashif Rashid. "Preparation and nitrobenzene reaction kinetics of microcrystalline tungsten bronze thin films with or without transitional metal (Ag, Ti, Cr, Mn, Fe, Co, Ni, and Cu) coatings." 2006. http://digital.library.okstate.edu/etd/umi-okstate-1732.pdf.

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Petley, Vijay Uttamrao. "Material and Mechanical Aspects of Thin Film Coatings for Strain Sensing Application on Aero Engines." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4273.

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Aero engines are one of the most complex machines on this planet and have propelled the necessity of advanced material technologies. Health monitoring of the engine is performed by a variety of sensors and amongst these strain sensor is very important as it aids in evaluating the stresses experienced by the body. Unlike conventional foil gauge which tends to debond under hostile environments in the engine like high rpm of blades, temperature, mass flow, etc, thin film based strain gauges are likely to exhibit better adhesion on the substrates. The usage of Ni-Cr thin films in strain gauge sensor has been proven for static application, wherein the substrate does not experience the fluctuating loads. Material and mechanical aspects of thin films for design and development of thin film based strain gauge sensor for aero engine application was taken up as a research work. One of the objectives of the work was to characterize the Ni-Cr thin films with varying composition deposited by sputter deposition process and characterize the films for its microstructural features and mechanical properties. The correlation of these properties is performed and amongst the film compositions investigated the film with alloy composition of Ni-Cr:80-20 at% exhibits the most distinct columnar structure, highest electrical resistivity (2.037 μΩm), hardness (5.8 GPa) and the modulus (180 GPa). This Ni-Cr: 80-20 at% film exhibits no surface cracks when loaded in the elastic region of the titanium alloy GTM-Ti-64. Resistance to deformation under the action of externally applied load on a body results in stress within the body. In single or multilayer film stacking the stress experienced in the film by virtue of substrate deformation needs to be investigated quantitatively. The substrate stresses are transferred to the films by shear stresses at the interface. In order to measure the surface strain by change in the electrical resistance of the gage it is important to quantitatively evaluate the stresses in the films. Are these stresses very high to cause delamination and film cracking or are these stresses too less to be measured. In order to understand the stress evolution and transfer mechanism, an analytical approach, numerical simulation and experimental validation were performed. Thin film strain gauge device architecture has been engineered such that an insulating layer of alumina is deposited on substrate and a sensing layer is deposited on the insulating layer to avoid thermal mismatch and maintain the strain compatibility. A alumina of 45 micron thick alumina layer was successfully deposited on Titanium alloy (GTM-Ti-64) by sputter deposition without any edge delamination and microcracks. Finite Element Analysis (FEA) results showed that the axial and shear stress profiles at the Ti alloy-alumina interfaces for both single and multilayer architecture are similar and higher when compared with the stresses in alumina-NiCr. The shear stress profile for single layer and multilayer architecture follows the modified shear lag model with peak shear stresses at the extremes and peak axial stress at the centre of the film. The axial stresses in the alumina film is found to be significant in both FEA and validated by experimental findings with film fracture strength of 814 MPa. Similarly, the shear stresses were found to be minimal by FEA studies and the experimental finding suggests the film fracture under tensile mode. Complete strain transfer was observed from substrate to these thin films under both tensile and vibratory fatigue, suggesting proper adhesion of the alumina film on the Ti alloy substrate. The maximum strain compatibility of thin film alumina on Ti alloy substrate was found to be 0.22 %. A Goodman correction for the fatigue data under axial mode was performed and on combining the entire fatigue data for R = -1 linear fit was observed across all the data points wherein the Basquin equation was considered for data analysis and the fatigue strength coefficient and exponent are found to be 872.56 and -0.054 for alumina thin film on Ti alloy substrate. Thin film strain gauges (TFSG) with these characteristics were deposited on the compressor rotor blade of one of the typical aero engines. Thick contact pads and a new bonding technique are used for taking the lead wires. The entire multilayer structure with wire bonding was tested under static and dynamic (vibratory fatigue) conditions and TFSG exhibited a reproducible strain when compared against foil based strain gauge under both tension and compression. TFSG device was tested for a duration of 2200 seconds with a blade vibration frequency of 406 Hz i.e. 8.9x105 cycles. During the entire test duration, TFSG successfully measured strains from the aero engine blade.

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CHOU, YANG TSUNG, and 楊宗洲. "Effects of Cr Contents on Characteristics of the Ni-Cr Alloy and its Thin Film." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/00890046585602224141.

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碩士
義守大學
材料科學與工程學系
92
Abstract The purpose of this experiment is to investigate the effects of Cr concentration to the Ni-Cr alloy, and to find the influence of sputtering parameters to deposition rate, phase identify, optical properties of thin film by fabricating Ni-Cr thin film with DC sputtering method. The change of sputtering parameters is the different sputtering power(500W, 750W, 1000W), and working pressure(3mtorr, 5mtorr, 8mtorr, 10mtorr). In the results of alloy, the twin structure can be observed from microstructure of scanning electron microscopy in the alloy with low Cr concentration, the alloy with high Cr concentration has some precipitates in the microstructure, but there is not much affected for the distribution of precipitate to properties of thin film. The density in the center of alloy is a little higher than it at the edge by measuring, they have the same phase form X-Ray diffraction, and there is no shifting of diffraction peak. Above these results, we can know that the alloy has a fine uniform and it is good for thin film properties. In the results of thin film, the deposition rate decreased fewer with the increasing of Cr concentration, but the deposition rate of pure Ni film is not at the maximum point because of the long sputtering working distance in pure Ni film. It can be observed that thin film and alloy have the same crystalline of phase from phase identify with the method of Grazing Incident X-Ray Diffraction (GID), and the diffraction peak are shifting to the low angle with the increasing of Cr concentration, it means that the amount of Cr concentration can be solutted more into the Ni phase. In the part of optical properties; the reflectance of short wave length increase, and the reflectance of long wave length decrease with the increasing of Cr concentration because Cr has a good reflectance for short wave length, Ni has a good reflectance for long wave length, moreover the reflectance of long wave length and it of short wave length are getting to close with the increasing of Cr concentration, so the image will not be confused for using the pure Cr to the reflection mirror. For the deposition rate; it increase obviously with the increasing of sputtering power, and has a fine crystalline, there is a little affected of deposition rate to the thin film reflectance. In this experiment, it can be observed that the deposition rate doesn’t has a turning point to the working pressure, and it has a little effect to the crystalline, the deposition rate to the reflectance is decreasing obviously because the range of the sputtering working pressure is not extensive.

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Fane, Liang Yuan, and 梁沅汎. "The Optical Property Studies of Ni-Ti and Co-Cr Thin Film." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/85634705396117284868.

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碩士
輔仁大學
物理學系
89
The mainly purpose of this thesis is sputtering nickel, titanium and Ni-Ti thin films on substrate, and then uses x-ray diffractometer, and spectrophotometer Cary-5E to measure its optical properties. Also we use spectrophotometer Cary-5E to measure the optical spectrum of the Co-Cr thin films. At first, we use x-ray diffractometer to measure Ti’s components. Then use spectrophotometer Cary-5E to measure the optical spectrum for the nickel, titanium, Ni-Ti and Co-Cr thin films of different thickness to compare their transmittance, reflectance, and absorptance. We find the optical spectrum shake with increasingly thickness of Ni-Ti, and Ti thin film. The distance with peak appear and again is about 1000Å. And then I make my sample with 1000Å, 2000Å,3000Å,4000Å, and 5000Å.For example by the transmittance in 652nm wavelength of Ni and Ni79Ti21 (1000Å),the transmittance intensity of Ni thin film is 45.4% with smooth line, but the transmittance intensity of Ni79Ti21 thin film is 72.5%，and it is the first peak. Now we know the phenomenon of Ni-Ti thin film is the peak, and the transmittance getting more increase with increasingly Ti. For the base components of Co-Cr, they have the same quality of transmittance. The quality of transmittance is lower in long wavelength，and it decrease gradually by increasingly thickness.

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Chuang, Nai-chuan, and 莊乃川. "The Study of the Electrical Properties of the Ni-Cr Thin Film Resistor." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/tjm5d5.

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博士
國立中山大學
電機工程學系研究所
104
With the demand of electronic devices increasing for information and telecommunication technologies, the passive component with high precision and high reliability properties have become more important in the recent years. The main process of thin film resistor is by sputtering technology to perform high precision of resistance, lower temperature coefficient of resistance (TCR) and high reliability properties. The thin film resistors are widely used in electronic circuit. Among the thin film resistor processes, the laser trimming dominate the precision of resistance and TCR is dominated by composition of sputtering target, sputtering condition and annealing condition. In this study, we focus on the dependence of TCR on different Ni-Cr film thickness and different annealing conditions. The electron mean free path (MFP) and scattering mechanisms of carriers due to surface scattering, grain boundary scattering and surface roughness scattering of Ni-Cr film have been determinate. The experimental results show the electron MFP is about 24.2nm. The TCR performance is increasing with annealing temperature increasing obviously for the thickness of Ni-Cr film is less than electron MFP. The TCR performance is stable as the Ni-Cr film thickness is thicker than the electron MFP, and decreases slightly as the annealing temperature increases. This is because the film is discontinuous with island structure which scattering of electrons at imperfections is dependent on temperature and the TCR increasing. For the thickness of Ni-Cr film is thicker than electron MFP, the film is continuous structure. There is a Cr2O3 oxidation layer on the surface of thicker Ni-Cr film after annealing process. An interdiffusion reaction phenomenon is occurrence. The Cr is diffused out to form Cr2O3 layer and caused higher Ni concentration in inside conductive layer. Thus the TCR decreased with the increase in annealing temperature. Finally, the electrical conduction mechanisms of Ni-Cr thin film resistor are demonstrated by different film thickness through scattering models fitting. The resistivity and temperature coefficient of the resistance of Ni-Cr thin film are measured to investigate the influence of thickness with different annealing temperature. An oxidation and atom inter-diffusion model was proposed to explain the effects of film thickness on the electrical properties of Ni-Cr thin film resistor under different annealing temperature. As the result, we obtained the thin film resistors of low TCR under ±5 ppm/0C at -55 0C and 125 0C.

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Lan, Tien-hao, and 藍天豪. "The Study of the Electric Resistance and Microstructure of the Ni-Cr Thin Film." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/73609024176414095128.

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碩士
義守大學
材料科學與工程學系碩士班
93
The objective of this experiment is to make a series study of the electric resistance and microstructure of Ni-Cr thin film. Ni-Cr thin film is made by DC sputtering with different power(500W,750W,1000W) and pressure(3,5,8,10mtorr). The effects of Cr content, sputtering parameters, and temperature on the film characteristic and electric resistance are investigated. Finally, try to find the relationship between the electric resistance and the microstructure. According to the results, some of the relations can be confirmed in the Ni-Cr thin film system. The deposition rate decreased with the increasing Cr content, because the sputtering yield of pure Ni is higher than Cr. The deposition rate increased linearly with increasing power, but there is no obvious variation with increasing pressure. The electric resistance of thin film decreased substantially with increasing film thickness, and it stabilized when the film thickness above 1500Å. The relation between film resistance and film thickness will not be changed by different Cr content, sputtering parameters, and temperature. The ability which film resistivity against to the variable temperature will change at the different film thickness, according to the thickness, it can be divided into three parts. In the same way, the relation of TCR and temperature also can be divided into three parts. By the way of integrating the above-mentioned, and to compare it with TEM, the process of formation in the thin film can be established. For the MC thin film, at the film thickness which is from 50Å to 200Å, it is a short-range-order and it is not as the form as Ni-Cr thin film. When the film thickness is form 200 Å to 2000 Å, it has already been at the second stage, and the film thickness is above 2000 Å, it is getting into the final stage. For the HC thin film, it is as same as MC at 50~200 Å, and the second stage is 200~1000 Å ,after 1000 Å , it will be at the third stage. With the increasing Cr content, TCR will decrease when Cr>44wt%, but it will increase at Cr60wt%. The best TCR will be at the Ni56wt%-Cr44%, 750W, 3mtorr, and film thickness is 900 Å.

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Book chapters on the topic "Ni-Cr Thin Films"

Cho, Nam Ihn, Se Jong Lee, Yo Seung Song, and Deuk Yong Lee. "Thermal Properties of Cr- and Ni- Silicide Thin Films." In Solid State Phenomena, 189–94. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.189.

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Goldsmith, C. C., and C. Van Buskirk. "Residual Stress Measurements on Cr/Ni Pads Evaporated on Polyimide Thin Films." In Advances in X-Ray Analysis, 203–12. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2972-9_24.

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Zhou, Ji Cheng, and Jian Wu Yan. "Microstructure and Electrical Properties of Nano Ni-Cr Thin-Films Fabricated by Magnetron Co-Sputtering Techniques." In Materials Science Forum, 1201–4. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.1201.

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Vasylyev, M., M. M. Nishenko, S. I. Sidorenko, and S. M. Voloshko. "Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating." In Defect and Diffusion Forum, 31–40. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-54-x.31.

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Gheidari, Mohammadi, and E. Asl Soleimani. "A study of Al/Ti, Al/Ni/Cr AND Al/Mo OHMIC Contacts to Indium Tin Oxide (ITO) for Application in Thin Film Solar Cell." In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1123–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_221.

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Jang, HeeJin, and HyukSang Kwon. "Photoelectrochemical analysis of the passive film formed on Fe-Cr-Ni alloys in pH 8.5 buffer solution." In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers, 279–84. Elsevier, 2006. http://dx.doi.org/10.1016/b978-044452224-5/50045-7.

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Conference papers on the topic "Ni-Cr Thin Films"

Shiroishi, Y., Y. Matsuda, S. Hishiyama, H. Suzuki, T. Ohno, Y. Yahisa, N. Tsumita, M. Ohura, and M. Hayashi. "Read and write characteristics of Co-Ni-Zr-M/Cr thin films for longitudinal recording." In International Magnetics Conference. IEEE, 1989. http://dx.doi.org/10.1109/intmag.1989.689986.

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Cho, Joon Hyong, and Michael Cullinan. "Graphene Growth on and Transfer From Platinum Thin Films." In ASME 2017 12th International Manufacturing Science and Engineering Conference collocated with the JSME/ASME 2017 6th International Conference on Materials and Processing. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/msec2017-3059.

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This paper presents graphene growth on Pt deposited on four different adhesion layers such as Ti, Cr, Ta, and Ni. During the graphene growth at 1000 °C using conventional Chemical Vapor Deposition method, these adhesion layers diffuse into and alloy with Pt layer resulting graphene to grow on different alloys. Therefore, Pt layer on different adhesion layers induces different quality and number of layer(s) of graphene grown on the film. Monolayer graphene was produced on majority of metal layers except on Pt/Ta layer where bilayer graphene is observed. The lowest defects were found on graphene grown on Pt/Ni film where slightly higher number of wrinkles are observed compared to other alloys. We characterized graphene using SEM images of transferred graphene, of Pt grains after the growth of graphene, and of in-depth profiles of thin film via TOF-SIMS. Our paper states feasibility of graphene growth on Pt thin film on various adhesion layers and obstacles to overcome to enhance graphene transfer from Pt thin film. We address one of the major difficulties of graphene growth and transfer to implement graphene in NEMS/MEMS devices.

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Komatsu, Takeru, Hiroyasu Ohtake, and Yasuo Koizumi. "Study on Condensation Heat Transfer of Micro Structured Surfaces (Effect on Condensation Heat Transfer of Metal-Spattering Surfaces)." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44532.

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The present study was intended to examine how the condensation heat transfer, especially the drop-wise condensation, was affected by modifying the surface nature. In the present study, condensation heat transfer experiments for steam were performed by using mirror-finished copper surface, mirror-finished silicon surface and some mirror-finished silicon surfaces with very thin metal films by using spattering. The silicon surfaces with the thin metal films were created by the MEMS technology. The film- and also the drop-wise condensation were observed on the copper surface. The filmwise condensation heat flux was in good agreement with the values of the Nusselt’s equation. It was approximately one-tenth of the drop-wise condensation heat flux. The condensation on the mirror-finished silicon surface was the drop-wise condensation. The heat flux was approximately one-tenth of the drop-wise condensation heat flux on the copper surface. The condensation on silicon surfaces with thin Copper (Cu), Chromium (Cr), Lead (Pb) and Gold (Au) films were drop-wise. The condensation on silicon surfaces with thin Nickel (Ni), Titanium (Ti) and Aluminum (Al) films were filmwise.

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Huang, Annie T., Chung-Kuang Chou, and Chih Chen. "Self-Aligned Hermetic Packaging Using Eutectic SnPb Solder and Cr/Ni/Cu Metallization Layer." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61026.

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This paper reports an easy, low cost, and low temperature hermetic packaging technology utilizing eutectic SnPb solder and Cr/Ni/Cu bonding pad. We investigate the bonding results of silicon-silicon as well as silicon-glass and glass-glass bonding. Most hermetic packaging technologies require a bonding temperature higher than 300°C. Because some devices are sensitive to temperature that decreases their functionalities, two localized heating technology have been proposed. One technology generates heat via built-in-microheaters on the silicon substrate. Another localized heating technology utilizes microwave as a heating source [1]. However, both technologies require high cost and cannot be implemented for mass production. Furthermore, local heating creates a large temperature gradient. The stress causes crack on the substrates, thus limiting the selection of substrate materials. We choose eutectic tin-lead with the melting temperature of 183°C. Metal thin films we choose is also similar to the under bump metallurgy used for flip chip technology. The advantage of solder is its metal property. With a width of a few micrometers, metal can block moisture for over a decade. In addition, solder is known to pertain self-aligning property in flip chip technology. Other kind of solders can also be applied for hermetic packaging as well. Shie et al have tested In-Sn as bonding using the reflow temperature as low as 120 °C [2]. Seong-A Kim et. al have tested Au-Sn solder line at 400°C [3,4]. Due to the difference in melting points, the application of Sn-Pb, Au-Sn and In-Sn can be different. Bonding characteristic of our design is investigated on three different setups: silicon-silicon, silicon-glass, and glass-glass samples. (Fig.1) This experiment consists of three different setups: silicon-to-silicon bonding, silicon-to-glass bonding, and glass-to-glass bonding. These three different setups utilize the same bonding method. The design includes square patterns and circle patterns of 500 μm width as shown in Figure 2. Schematic process flow of sample fabrication is demonstrated in Figure 3. Substrate and cap have identical size with the pattern of square of 1 cm in width or circle of 1 cm in diameter. The bonding pad is composed of three layers of metal from bottom to top: 500 Å of chromium, 2000 Å of nickel and 6000 Å of copper.(Fig.3b) Eutectic SnPb solder is reflowed on square or circle patterns on a hot plate at room ambient.(Fig.3d) Sample pairs are then bonded on a hot plate at 200°C for about 1.5 minutes for silicon-silicon and silicon glass bonding and 3 minutes for glass-glass bonding.(Fig.3e) Before placing the sample pairs on the hot plate, for glass-glass and glass-silicon bonding, we align a pair of chips of matched pattern by visual alignment. For silicon-silicon bonding, we align two chips along the dividing lines. Figure 4a and 4b show a glass and a silicon sample after solder reflow respectively. Sample pairs after bonding process are seen in Figure 5a through 5c. Figures 6a through 6c show the cross-sectional picture of the joint. Figures 6b and 6c are enlarged pictures of left and right side of the joints respectively. The average misalignment is 11.2 μm and 13.6 μm for square and circle samples respectively. Bonding strength of the three setups ranges from 3 MPa to 10 MPa. For leakage rate test, a 3 mm hole in diameter was drilled under the sealed area on the substrate side, followed by connecting a glass pipe to the hole by frit glass. The setup can be pumped down to the order of 10−8 torr.

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He, Qicong, Dongping Zhang, Ying Huang, Yu Yang, Huan Guan, Jingcheng Jin, and Ping Fan. "Employing Ni-Cr co-doping to prepare low phase transition temperature VO2 film." In Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), edited by Junhao Chu and Jianda Shao. SPIE, 2019. http://dx.doi.org/10.1117/12.2541404.

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Lai, Lifei, Rong Sun, Xianzhu Fu, and Ruxu Du. "Influence of segregation and diffusion behavior on electrical properties of embedded Ni- Cr thin film resistor." In 2012 13th International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP). IEEE, 2012. http://dx.doi.org/10.1109/icept-hdp.2012.6474622.

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Sonoya, K., H. Sunahara, M. Nakamura, and K. Ishida. "Effect of Base Metal on the Thermal Cycle Properties of Heat-Resistant Plasma Sprayed Coatings." In ITSC 2012, edited by R. S. Lima, A. Agarwal, M. M. Hyland, Y. C. Lau, C. J. Li, A. McDonald, and F. L. Toma. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.itsc2012p0485.

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Abstract The thermal cycle test of Al2O3 sprayed 1%Cr-0.5%Mo steel and 18%Cr-8%Ni steel was performed, and the failure type of thermally sprayed coating on both steels was compared. The results obtained are follows. (1)The thermal cycle fatigue life of thermal sprayed 1%Cr- 0.5%Mo steel was shorter than that of thermal sprayed 18%Cr-8%Ni steel. (2)In the case of thermally sprayed 18%Cr-8%Ni steel that is difficult to oxidize at high temperature, during thermal cycle, a tensile stress occurs in a sprayed coating and a compressive stress occurs in a substrate. Thus the thermal strain occurs at the interface of sprayed coating and substrate. The sprayed coating delaminates when the thermal cycles reach the limit value. (3)In the case of thermal sprayed 1%Cr-0.5%Mo steel that is easy to oxidize at high temperature, during thermally cycle, dense oxide film forms at the interface between the sprayed coating and substrate, and adhesive strength in the interface becomes low. Thus the sprayed coating delaminates under the lower thermal strain.

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Touminen, J., M. Honkanen, M. Uusitalo, S. Ahmaniemi, P. Vuoristo, and T. Mäntylä. "Hot Corrosion Resistant Laser Coatings in Diesel Engine." In ITSC2007, edited by B. R. Marple, M. M. Hyland, Y. C. Lau, C. J. Li, R. S. Lima, and G. Montavon. ASM International, 2007. http://dx.doi.org/10.31399/asm.cp.itsc2007p1099.

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Abstract Hot corrosion tests have been conducted on Ni- and Cr-based laser coatings, a high-velocity oxy-fuel (HVOF) sprayed coating and various wrought alloys covered with a synthetic salt of Na2SO4-V2O5 and exposed at 650°C for 1000 h in air. Coating microstructures and reaction product layers were analyzed with scanning electron microscope (SEM) and energy dispersive spectrometer (EDS). The hot corrosion resistance of tested specimen was evaluated by measuring its mean thickness loss. Generally, wrought alloys, HVOF coating and Cr-based laser coatings suffered from selective corrosion beneath salt film, that is, distinct Cr-depleted layer was formed at alloy/salt interface. Cr-based laser coatings exhibited extended solid solubility and they transformed towards equilibrium condition. Cr-rich phases enriched further with Cr and they were prone to corrosion. Low diluted laser coatings and HVOF coating were more resistant to hot corrosion than commonly used industrial standard alloy, Nimonic 80A. Ni-based laser coating exhibited resistance equivalent to Cr-based coatings and superior to corresponding wrought alloy.

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Houle, F. A., J. Ure, T. Clemes, J. Bond, P. Sharma, M. Coughlan, and K. A. Singmaster. "Influence of Feature Size Scaling on Chemical Vapor Deposition Chemistry." In Chemistry and Physics of Small-Scale Structures. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.csud.3.

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Chemical vapor deposition is uniquely suited for depositing metal films with characteristic dimensions ranging from nanometers to meters. The general utility of the method has been limited by the difficulty in controlling film purity for many metals, however, largely because of the complexities of gas-surface interactions as the films grow. There have been a number of studies addressing the surface chemistry of metal CVD for the aluminum alkyls, Cu(I) and Cu(II) complexes, Cr, Mo, W, Ni and Fe carbonyls and WF6.1 Most of this work has focussed on monolayer-level chemistry rather than deposition under steady-state gas flow at typical CVD pressures, so knowledge of factors affecting surface reactions leading to decomposition is still somewhat limited. In particular, the relationship between surface reactions and gas transport is essentially unexplored although it is a critical aspect of scaling of the chemistry with feature dimensions. This issue has received some attention in modelling of direct write deposition rates,2 although reaction mechanisms were not considered.

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Chiang, Chen-Su, Wen-Hsi Lee, and Franco Jap. "Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering." In 2014 International Symposium on Next-Generation Electronics (ISNE). IEEE, 2014. http://dx.doi.org/10.1109/isne.2014.6839380.

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