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Journal articles on the topic 'Negative resistance oscillator'

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Published: 7 July 2024

Last updated: 7 July 2024

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1

Najafabadi, Neda Kazemy, Sare Nemati, and Massoud Dousti. "Design of S-Band Oscillators by Using GaAs ED02AH 0.2-μm Technology." Advanced Materials Research 383-390 (November 2011): 5874–79. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.5874.

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The S band limits from 2 to 4 GHz, is part of the electromagnetic spectrum’s microwave band. It is used by radars, satellites and some communications. This paper is concerned with the theory and design of 3 GHz feedback type and negative resistance oscillators by using Aiglent ADS software simulator with GaAs ED02AH 0.2-μm technology, and comparison of their results. A lumped element resonator has used in the design of feedback type oscillator and a negative resistance oscillator has utilized a microstrip resonator. The negative resistance oscillator operates at 3.072 GHz with phase noise levels at -99.49 dBc/Hz and -119.6 dBc/Hz at 100KHz and 1 MHz offset frequencies respectively. The phase noise levels of feedback type oscillator are -83.30 dBc/Hz and -103.3 dBc/Hz at 100KHz and 1 MHz offset at oscillation frequency of 3 GHz. Furthermore, we compared the output power of these oscillators and negative resistance oscillator showed 7.124 dBm, and feedback type oscillator presented -10.707dBm.

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2

Al-Raie, Firas, and Suhad Jasim. "Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators." Journal of Al-Rafidain University College For Sciences ( Print ISSN: 1681-6870 ,Online ISSN: 2790-2293 ), no. 1 (October 10, 2021): 427–57. http://dx.doi.org/10.55562/jrucs.v39i1.221.

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In microwave negative resistance oscillators, the RF transistor presents impedance with a negative real part at either of its input or output ports. According to the conventional theory of microwave negative resistance oscillators, in order to sustain oscillation and optimize the output power of the circuit, the magnitude of the negative real part of the input/output impedance should be maximized. This paper discusses the effect of the circuit’s load impedance on the input negative resistance and other oscillator performance characteristics in common base microwave oscillators. New closed-form relations for the optimum load impedance that maximizes the magnitude of the input negative resistance have been derived analytically in terms of the Z-parameters of the RF transistor. Furthermore, nonlinear CAD simulation is carried out to show the deviation of the large-signal optimum load impedance from its small-signal value. It has been shown also that the optimum load impedance for maximum negative input resistance differs considerably from its value required for maximum output power under large-signal conditions. A 1.8 GHz oscillator circuit has been designed and simulated using a typical SiGe hetero-junction bipolar transistor (HBT) to verify the proposed approach of analysis.

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3

Lei, Yu, and Jian Feng Ai. "Application of Negative Resistance in the Inductor Feedback Oscillators Based on Multisim." Applied Mechanics and Materials 556-562 (May 2014): 1898–901. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.1898.

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By analyzing three-point oscillator of inductance feedback with the loss resistance of the inductor,we found the loss resistance of the inductor is a major factor in affecting circuit performance. Negative resistance in series with loss resistance can offset the impact of the loss resistance in the circuit. Oscillation circuit Start-up easilier. The quality factor Q increases and the selectivity is better.The oscillation shape closer to the ideal oscillator.

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4

Kulapong, Worawut, Winai Jaikla, Surapong Siripongdee, Roman Sotner, Peerawut Suwanjan, and Amornchai Chaichana. "A New Method to Synthesise the Sinusoidal Oscillator Based on Series Negative Resistance-Capacitance and its Implementation Using a Single Commercial IC, LT1228." Elektronika ir Elektrotechnika 29, no. 3 (June 27, 2023): 26–32. http://dx.doi.org/10.5755/j02.eie.33844.

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An alternative method for synthesising the sinusoidal oscillator based on series negative resistance-capacitance is presented in this paper. The proposed topology is constructed with the series negative resistance-capacitance circuit connected in parallel with a grounded resistor and capacitor. To validate the proposed method, a new grounded series negative resistance-capacitance simulator is also proposed as a subcircuit for synthesising the sinusoidal oscillator. The series negative resistance-capacitance simulator is based on a commercially available integrated circuit (IC), LT1228. The equivalent negative resistance and equivalent negative capacitance can be adjusted electronically using an external DC bias current. The sinusoidal oscillator that is synthesised using the proposed method consists of a single LT1228, two capacitors, and three resistors. The frequency and the condition of the oscillation are orthogonally adjusted. Also, the condition of oscillation is electronically controlled. The amplitude of the sinusoidal waveform is adjustable. In addition, the output voltage node of the proposed oscillator has a low impedance, which allows it to connect to other circuits without using an additional buffer. Both PSPICE simulation and experiment are used to validate the proposed circuits.

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5

Grebennikov, A. V. "Stability of Negative Resistance Oscillator Circuits." International Journal of Electrical Engineering Education 36, no. 3 (July 1999): 242–54. http://dx.doi.org/10.7227/ijeee.36.3.6.

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6

Nguyen, Thanh Dat, and Jong-Phil Hong. "A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process." Electronics 9, no. 8 (July 28, 2020): 1214. http://dx.doi.org/10.3390/electronics9081214.

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This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a transformer connected between gate and drain terminals of cross pair transistors to minimize the power loss at the second harmonic frequency. Next, the phases and the oscillation frequencies between the oscillator cores are locked by employing an inductor of frequency selective negative resistance topology. The proposed topology was implemented in a 65-nm bulk CMOS technology. The highest measured output power is −0.8 dBm at 353.2 GHz while dissipating 205 mW from a 2.8 V supply voltage.

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7

zhao, Zhu, Guo, Cong, Tee, Song, and Zheng. "Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas." Electronics 8, no. 10 (October 14, 2019): 1164. http://dx.doi.org/10.3390/electronics8101164.

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This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model. Impedance of the RTD oscillator changes periodically when physical dimension of the device is of considerable fraction of the electrical wavelength. As long as impedance matching is achieved, the oscillation frequency is not limited by the size of the device. An RTD oscillator with a graphene film and negative differential resistance (NDR) will produce power amplification. The positive electrode of the DC power supply is modified and designed as an antenna. So, the reflected power can also be radiated to increase RTD oscillator output power. The output analysis shows that through the optimization of the antenna structure, it is possible to increase the RTD oscillator output to 22 mW at 1.9 THz and 20 mW at 6.1 THz respectively. Furthermore, the RTD oscillator has the potential to oscillate at 50 THz with a matching antenna.

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8

Nguyen, Park, and Hong. "A Millimeter-Wave Fundamental Frequency CMOS-Based Oscillator with High Output Power." Electronics 8, no. 11 (October 27, 2019): 1228. http://dx.doi.org/10.3390/electronics8111228.

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The millimeter-wave imaging approach is a promising candidate to satisfy the unmet needs of real-time biomedical imaging, such as resolution, focal area, and cost. As a part of the endeavor to make millimeter-wave imaging more feasible, this paper presents a CMOS oscillator generating a high output power at the millimeter-wave frequency range, with a high fundamental oscillation frequency. The proposed oscillator adopts a frequency-selective negative resistance topology to improve the negative transconductance and to increase the fundamental frequency of oscillation. The proposed oscillator was implemented in a 65 nm bulk CMOS process. The measured highest output power is –2.2 dBm at 190 GHz while dissipating 100 mW from a 2.8 V supply voltage.

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9

Suh, Inwon, Patrick Roblin, and Youngseo Ko. "1/f Additive Phase Noise Analysis for One-Port Injection-Locked Oscillators." Electronics 12, no. 2 (January 4, 2023): 264. http://dx.doi.org/10.3390/electronics12020264.

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The 1/f additive phase noise of one-port injection-locked oscillators is experimentally characterized and analyzed using a simple analytic model based on the generalized 1/f Kurokawa theory. To experimentally verify the prediction of the simple analytic model proposed, two negative-conductance transmission line pHEMT oscillators operating at 2.4828 GHz and 2.485 GHz were designed and fabricated. A new configuration for integrating an additive phase noise measurement system with a large signal network analyzer (LSNA) is introduced to jointly acquire both the noise and RF waveforms of the one-port injection-locked oscillator. The Kurokawa derivatives needed for the analytic expression were experimentally obtained using the LSNA measurements and optimized to accurately model the corner frequency. A good agreement between the predicted and experimental results was obtained for both the injection-locked and free-running oscillators. In contrast to phase noise measurements of the free-running oscillator, which can only characterize the oscillator-upconverted 1/f3 noise, the additive phase noise characterization of the injection-locked oscillator is shown to provide the means to directly observe and characterize the input-referred intrinsic 1/f noise source of the oscillator negative resistance.

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10

Ulansky, Vladimir, Ahmed Raza, and Denys Milke. "Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications." Applied Sciences 11, no. 21 (October 20, 2021): 9815. http://dx.doi.org/10.3390/app11219815.

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Negative differential resistance (NDR) is inherent in many electronic devices, in which, over a specific voltage range, the current decreases with increasing voltage. Semiconductor structures with NDR have several unique properties that stimulate the search for technological and circuitry solutions in developing new semiconductor devices and circuits experiencing NDR features. This study considers two-terminal NDR electronic circuits based on multiple-output current mirrors, such as cascode, Wilson, and improved Wilson, combined with a field-effect transistor. The undoubted advantages of the proposed electronic circuits are the linearity of the current-voltage characteristics in the NDR region and the ability to regulate the value of negative resistance by changing the number of mirrored current sources. We derive equations for each proposed circuit to calculate the NDR region’s total current and differential resistance. We consider applications of NDR circuits for designing microwave single frequency oscillators and voltage-controlled oscillators. The problem of choosing the optimal oscillator topology is examined. We show that the designed oscillators based on NDR circuits with Wilson and improved Wilson multiple-output current mirrors have high efficiency and extremely low phase noise. For a single frequency oscillator consuming 33.9 mW, the phase noise is −154.6 dBc/Hz at a 100 kHz offset from a 1.310 GHz carrier. The resulting figure of merit is −221.6 dBc/Hz. The implemented oscillator prototype confirms the theoretical achievements.

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11

Kumar, Puneeth, and S. Rekha. "Fast start crystal oscillator design with negative resistance control." Integration 65 (March 2019): 138–48. http://dx.doi.org/10.1016/j.vlsi.2018.11.012.

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12

Lam, V. M. T., and P. C. L. Yip. "Microwave oscillator phase noise reduction using negative resistance compensation." Electronics Letters 29, no. 4 (1993): 379. http://dx.doi.org/10.1049/el:19930255.

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13

OSADCHUK, Jaroslav, Alexander OSADCHUK, and Vladimir OSADCHUK. "SELF-OSCILLATING PARAMETRIC PRESSURE SENSORS." Herald of Khmelnytskyi National University. Technical sciences 309, no. 3 (May 26, 2022): 125–34. http://dx.doi.org/10.31891/2307-5732-2022-309-3-125-134.

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Self-oscillating parametric pressure sensors are proposed based on transistor microelectronic structures with negative differential resistance with primary strain-sensing resistor and diode, and the primary strain-sensing elements are active elements of the self-oscillator circuit, which simplifies the design of pressure sensors. It is also proposed to replace the passive inductance of the self-oscillator oscillatory circuit with an active inductive element based on a transistor with a phase-shifting RC circuit, which makes it possible to expand the range of output frequency adjustment, as well as to fully produce pressure sensors using microelectronic technology. Based on the consideration of physical processes in primary strain-sensing elements and self-oscillators, mathematical models of pressure sensors have been developed, on the basis of which parametric dependences of the conversion and sensitivity functions have been obtained. It is shown that the main contribution to the change in the conversion function is made by the change in pressure. This causes a change in the equivalent capacitance and negative differential resistance of the oscillatory system of sensor self-oscillators, which in turn changes the output frequency of the devices. The sensitivity of the pressure sensors varies from 0.365 kHz/kPa to 2.45 kHz/kPa when the pressure changes from 0 kPa to 2050 kPa. The obtained parametric dependences of the conversion functions of pressure sensors show the possibility of easier calculation of the main characteristics of the sensors and clearly show the influence of each parameter of the primary converters and the parameters of the self-oscillator on the output frequency of the sensors in comparison with the calculations of the conversion functions based on the Kirchhoff equations. Pressure sensors with a frequency output do not require analog-to-digital converters and amplifying devices for further processing of information signals, which reduces the cost of information-measuring equipment, in addition, it is possible to transmit information over a distance when the sensors operate at microwave frequencies.

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14

SOLIMAN, AHMED M. "GENERATION OF OSCILLATORS BASED ON GROUNDED CAPACITOR CURRENT CONVEYORS WITH MINIMUM PASSIVE COMPONENTS." Journal of Circuits, Systems and Computers 18, no. 05 (August 2009): 857–73. http://dx.doi.org/10.1142/s021812660900540x.

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In this paper, eight new Frequency Dependent Negative Resistance (FDNR) circuits using two current conveyors or inverting current conveyors or a combination of the two types are introduced. The proposed circuits are canonic and they use two grounded capacitors and one floating resistor. The generation of grounded capacitor minimum passive component oscillators from the FDNR circuits is also considered. It is found that two of the recently reported attractive oscillators are among the family of the generated oscillator circuits. Additional six new oscillator circuits based on the FDNR circuits are introduced in this paper. Spice simulation results using technology: SCN 05 feature size 0.5 μm, MOSIS Vendor: AGILENT to demonstrate the practicality of the proposed oscillators are included.

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15

Everard, J., Min Xu, and S. Bale. "Simplified phase noise model for negative-resistance oscillators and a comparison with feedback oscillator models." IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 59, no. 3 (March 2012): 382–90. http://dx.doi.org/10.1109/tuffc.2012.2207.

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16

Malki, Ayoub, Jamal Zbitou, Larbi El Abdellaoui, Mohamed Latrach, Abdelali Tajmouati, and Ahmed Errkik. "Design of Negative Resistance Oscillator with Rocord Low Phase Noise." TELKOMNIKA (Telecommunication Computing Electronics and Control) 16, no. 2 (April 1, 2018): 586. http://dx.doi.org/10.12928/telkomnika.v16i2.6999.

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17

Lewandowski, Arkadiusz, Wilfred Mwema, Günter Kompa, and Wojciech Wiatr. "A 24 GHz PHEMT-based oscillator." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2003): 15–19. http://dx.doi.org/10.26636/jtit.2003.1.160.

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We present a systematic nonlinear procedure for designing microwave oscillators utilising a nonlinear PHEMT model, the negative resistance approach and the describing function concept. The procedure is applied in the design of a 24 GHz oscillator, which is then realised in hybrid technology. Measurement results show -6% shift in the frequency but an acceptable agreement in the output power. A detailed analysis shows that the frequency shift arises mainly from inadequate CAD models in the K band, for the microstrip components employed in our design.

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18

Hasan, S. M. Rezaul. "Transition Frequencies and Negative Resistance of Inductively Terminated CMOS Buffer Cell and Application in MMW LC VCO." Active and Passive Electronic Components 2010 (2010): 1–11. http://dx.doi.org/10.1155/2010/542406.

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This paper investigates the transition frequencies () of an inductively terminated CMOS source follower buffer for negative resistance behavior at which the effective shunt resistance looking into the source of the buffer cell changes sign. Possible limiting frequencies of oscillation are determined based on resonators formed by a grounded gate inductor and a parasitic capacitance at the gate of the negative resistance buffer cell. The range of frequencies of oscillation of this negative resistance buffer cell for variations in the different circuit parameters/elements is explored. Following this, a millimeter wave (MMW) oscillator is simulated using the IBM 130 nm CMOS process technology which can operate at 70 GHz. High-frequency MOSFET model was used for these simulations. The cell had an extremely low power dissipation of under 3 mW. Extensive Monte Carlo simulations were carried out for manufacturability analysis considering up to 50% variation in process and geometrical parameters, supply voltage, and ambient temperature. Noise analysis and a simulated estimate of the phase noise in an MMW LC VCO application is also reported.

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19

Adachi, Takehiko, Taiki Ueno, and Shoji Izumiya. "A High Frequency Piezo-Electric Oscillator with Negative Resistance Enhancement Circuit." IEEJ Transactions on Electronics, Information and Systems 125, no. 8 (2005): 1191–96. http://dx.doi.org/10.1541/ieejeiss.125.1191.

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20

Chen, Wenlan, Shanwen Hu, Xiaozhou Liu, Haodong Wu, and G. P. Li. "A non common-node chaotic Colpitts oscillator with negative resistance enhancement." IEICE Electronics Express 11, no. 22 (2014): 20140902. http://dx.doi.org/10.1587/elex.11.20140902.

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21

Hussain, Muhammad Waqar, Hossein Elahipanah, John E. Zumbro, Saul Rodriguez, Bengt Gunnar Malm, Homer A. Mantooth, and Ana Rusu. "A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications." IEEE Journal of the Electron Devices Society 7 (2019): 191–95. http://dx.doi.org/10.1109/jeds.2018.2889638.

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22

Choi, Kang-Un, Thanh Dat Nguyen, Seong-Gon Choi, and Jong-Phil Hong. "High Frequency Buffer-Feedback Oscillator With an RF Negative-Resistance Circuit." IEEE Access 6 (2018): 20964–70. http://dx.doi.org/10.1109/access.2018.2818323.

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23

Xia, H. M., J. W. Wu, and Z. P. Wang. "The negative-differential-resistance (NDR) mechanism of a hydroelastic microfluidic oscillator." Journal of Micromechanics and Microengineering 27, no. 7 (May 17, 2017): 075001. http://dx.doi.org/10.1088/1361-6439/aa703b.

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24

del Pino Suárez, Francisco Javier, and Sunil Lalchand Khemchandani. "A New Current-Shaping Technique Based on a Feedback Injection Mechanism to Reduce VCO Phase Noise." Sensors 21, no. 19 (October 1, 2021): 6583. http://dx.doi.org/10.3390/s21196583.

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Inductor-capacitor voltage controlled oscillators (LC-VCOs) are the most common type of oscillator used in sensors systems, such as transceivers for wireless sensor networks (WSNs), VCO-based reading circuits, VCO-based radar sensors, etc. This work presents a technique to reduce the LC-VCOs phase noise using a new current-shaping method based on a feedback injection mechanism with only two additional transistors. This technique consists of keeping the negative resistance seen from LC tank constant throughout the oscillation cycle, achieving a significant phase noise reduction with a very low area increase. To test this method an LC-VCO was designed, fabricated and measured on a wafer using 90 nm CMOS technology with 1.2 V supply voltage. The oscillator outputs were buffered using source followers to provide additional isolation from load variations and to boost the output power. The tank was tuned to 1.8 GHz, comprising two 1.15 nH with 1.5 turns inductors with a quality factor (Q) of 14, a 3.27 pF metal-oxide-metal capacitor, and two varactors. The measured phase noise was −112 dBc/Hz at 1 MHz offset. Including the pads, the chip area is 750 × 850 μm2.

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25

Gan, Kwang Jow, Zheng Jie Jiang, Cher Shiung Tsai, Din Yuen Chan, Jian Syong Huang, Zhen Kai Kao, and Wen Kuan Yeh. "Design of NDR-Based Oscillators Suitable for the Nano-Based BiCMOS Technique." Applied Mechanics and Materials 328 (June 2013): 669–73. http://dx.doi.org/10.4028/www.scientific.net/amm.328.669.

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We present three oscillator designs using the negative-differential-resistance (NDR) circuit which is composed of several Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) devices. These oscillator circuits are composed of the NDR circuit, resistor, inductor, and capacitor. The oscillation frequencies are about several GHz based on the HSPICE simulation results. The circuits are designed using a standard 0.18 μm BiCMOS technique. Because our circuits are mainly made of a BiCMOS-NDR circuit that is different from a tradition NDR device made by a resonant tunneling diode with a quantum-well structure, we can utilize the nanobased BiCMOS process to implement these circuits by further improving the parameters.

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26

Su, Yun, Hui Lin Zhao, Xi Feng Liu, and Li Hao Huang. "Design of the Dielectric Resonator Oscillator with Buffer Amplifier." Advanced Materials Research 433-440 (January 2012): 4536–40. http://dx.doi.org/10.4028/www.scientific.net/amr.433-440.4536.

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A new structure of microwave field effect transistor Dielectric Resonator Oscillator (DRO) working at 8.5GHz is presented with negative resistance theory and harmonic balance theory. In order to magnify the output power and enhance the load pulling, a Buffer Amplifier (BA) is designed after the DRO. The nonlinearity and linearity of this structure are analyzed and optimized with commercial software ADS. Then the properties of this structure are simulated with commercial software HFSS. Simulation results show that DRO co-integrated with BA a high output power of 13.426dBm, at an oscillation frequency of 8.5GHz.

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27

Luprano, J., and M. Hasler. "More details on the devil's staircase route to chaos (negative resistance oscillator)." IEEE Transactions on Circuits and Systems 36, no. 1 (January 1989): 146–48. http://dx.doi.org/10.1109/31.16582.

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28

Mickens, Ronald E. "Investigation of the mathematical properties of a new negative resistance oscillator model." Circuits, Systems, and Signal Processing 8, no. 2 (June 1989): 187–205. http://dx.doi.org/10.1007/bf01599937.

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29

OSADCHUK, I., A. OSADCHUK, and V. OSADCHUK. "AUTOGENERATOR PARAMETRIC SENSORS OF THE MAGNETIC FIELD WITH A HALL ELEMENT AND A TWO-COLLECTOR BIPOLAR MAGNETOTRANSISTOR." Herald of Khmelnytskyi National University. Technical sciences 307, no. 2 (May 2, 2022): 114–22. http://dx.doi.org/10.31891/2307-5732-2022-307-2-114-122.

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Self-oscillating parametric magnetic field sensors with a frequency output signal based on transistor structures with negative differential resistance with primary magnetically sensitive Hall elements and a bipolar two-collector magnetically sensitive transistor are proposed, moreover, the primary magnetically sensitive elements also act as active circuit elements. Magnetic field sensors with a frequency output do not require analog-to-digital converters and amplifying devices for further processing of information signals, which reduces the cost of information-measuring equipment, in addition, it is possible to transmit information over a distance when the sensors operate at microwave frequencies. Based on the analysis of physical processes in primary magnetically sensitive elements and self-oscillators, mathematical models of sensors were developed, on the basis of which parametric dependences of the conversion and sensitivity functions were obtained. The obtained functions clearly show the influence of each element of the primary magnetic converters and self-oscillator elements on the output frequency of the sensors in comparison with the calculations of the conversion functions from equivalent device circuits based on the Kirchhoff solution equations. It is shown that the main contribution to the conversion functions is made by a change in the magnetic induction, which causes a change in the negative differential resistance and the equivalent capacitance of the oscillatory circuit of the self-oscillator, which in turn changes the output frequency of the magnetic field sensors. Self-oscillating parametric magnetic field sensors with a frequency output signal can significantly improve the accuracy and sensitivity of measuring magnetic induction, abandon analog-to-digital converters and amplifying devices in the further processing of information signals, they also allow transmitting initial information over a distance when operating at microwave frequencies. The sensitivity of the magnetic field sensors varies from 1.45 kHz/mT to 11.95 kHz/mT when the magnetic induction changes from 0.1 to 120 mT.

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30

Malki, Ayoub, Larbi El Abdellaoui, Jamal Zbitou, A. Errkik, A. Tajmouati, and Mohamed Latrach. "A Novel Design of Voltage Controlled Oscillator By using the Method of Negative Resistance." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 6 (December 1, 2018): 4496. http://dx.doi.org/10.11591/ijece.v8i6.pp4496-4504.

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<p>The objective of this paper is to develop a new design of a voltage controlled microwave oscillator by using the method of negative resistance in order to fabricate VCO with very good performance in terms of tuning rang, phase noise, output power and stability. The use of hybrid microwave integrated circuit technology’s (HMIC) offers a lot of advantage for our structure concerning size, cost, productivity, and Q factor. This VCO is designed at [480MHz; 1.4GHz] frequency for applications in the phase locked loop (PLL) for signal tracking, FM demodulation, frequency modulation, mobile communication, etc. The different steps of studied voltage controlled oscillator’s design are thoroughly described. Initially designed at a fixed frequency meanwhile the use of a varactor allow us to tune the frequency of the second design. It has been optimized especially regarding tuning bandwidth, power, phase noise, consumption and size of the whole circuit. The achieved results and proposed amendment are the product of theoretical study and predictive simulations with advanced design system microwave design software. A micro-strip VCO with low phase noise based on high gain ultra low noise RF transistor BFP 740 has been designed, fabricated, and characterized. The VCO delivers a sinusoidal signal at the frequency 480 MHz with tuning bandwidth 920 MHz, spectrum power of 12.62 dBm into 50 Ω load and phase noise of -108 dBc/Hz at 100 Hz offset. Measurement results and simulation are in good agreement. Circuit is designed on FR4 substrate which includes integrated resonators and passive components.</p>

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31

MATHUR, Koushick, Palaniandavar VENKATESWARAN, and Rabindranath NANDI. "Linear Voltage Controlled Oscillator Implementation in Electronically Variable Immittances." Romanian Journal of Information Science and Technology 2023, no. 1 (March 24, 2023): 65–77. http://dx.doi.org/10.59277/romjist.2023.1.05.

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New realization schemes of electronically tunable inductor (L) and Frequency-Dependent Negative Resistance (D) type immittances using a Current Feedback Amplifier (CFA) and Multiplication Mode Current Conveyor (MMCC) composite active building block (ABB) are proposed. Applications of the immittances to the design of selective filters and LC-type linear voltage controlled quadrature oscillator (LVCQO) are presented. Experimental results based on PSPICE simulation and hardware design for a linear range of oscillation frequency (fo ~ 13.6MHz) with satisfactory phase-noise figure on the oscillator wave response had been verified. Effects of the Active Building Block (ABB)-nodal imperfections are analyzed to be insignificant. The new ideas in this article are two types of immittance functions realizable in the same topology; appropriate frequency-domain selective responses are also presented with experimentation results.

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32

Ibrahim, Said H. "DESIGN AND ANALYSIS CONSIDERATIONS OF 4-GHZ INTEGRATED ANTENNA WITH NEGATIVE RESISTANCE OSCILLATOR." Progress In Electromagnetics Research B 13 (2009): 111–31. http://dx.doi.org/10.2528/pierb08122901.

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33

FURUYA, K., T. SUGAYA, K. KOMORI, and M. ASADA. "An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor." IEICE Transactions on Communications E91-B, no. 6 (June 1, 2008): 1800–1805. http://dx.doi.org/10.1093/ietcom/e91-b.6.1800.

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34

Dong, Cheng Hong, Chang Chun Zhang, Yu Feng Guo, Lei Lei Liu, Xin Cun Ji, and Yi Zhang. "Design of a Low-Phase-Noise LC Voltage Controlled Oscillator." Applied Mechanics and Materials 519-520 (February 2014): 1095–98. http://dx.doi.org/10.4028/www.scientific.net/amm.519-520.1095.

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A novel low phase noise LC Voltage Controlled Oscillator (LC-VCO) is designed in standard 0.18μm CMOS technology. Instead of common NMOS cross-pairs for a conventional complementary LC VCO, both body-biasing and Q-enhancement techniques are employed to provide a larger negative resistance for the VCO. Post-layout simulations showed that it can oscillate at a frequency range of 4.34-4.73GHz, and comsume a supply current of 1.52mA from a supply voltage of 1.8V. The VCO achieves a phase noise of -132.8dBc/Hz @ 1MHz offset and a figure of merit (FOM) of -195.9dBc/Hz at the frequency of 4.5GHz. A die area of 475μm×498.6μm is occupied.

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35

Gonzalez, G., and O. J. Sosa. "On the design of a series-feedback network in a transistor negative-resistance oscillator." IEEE Transactions on Microwave Theory and Techniques 47, no. 1 (1999): 42–47. http://dx.doi.org/10.1109/22.740074.

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Furuya, Katsumi, Osamu Numakami, Nozomi Yagi, Souichirou Hori, Takeyoshi Sugaya, Kazuhiro Komori, Masahiko Mori, Yoshinobu Okano, Hitoshi Muguruma, and Masahiro Asada. "Analysis of Terahertz Oscillator Using Negative Differential Resistance Dual-Channel Transistor and Integrated Antenna." Japanese Journal of Applied Physics 48, no. 4 (April 20, 2009): 04C146. http://dx.doi.org/10.1143/jjap.48.04c146.

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WORAPISHET, A. "Extended Phase Noise Performance in Mutual Negative Resistance CMOS LC Oscillator for Low Supply Voltages." IEICE Transactions on Electronics E89-C, no. 6 (June 1, 2006): 732–38. http://dx.doi.org/10.1093/ietele/e89-c.6.732.

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Rajamani, Vetriveeran, Changju Yang, Hyongsuk Kim, and Leon Chua. "Design of a Low-Frequency Oscillator with PTC Memristor and an Inductor." International Journal of Bifurcation and Chaos 26, no. 08 (July 2016): 1630021. http://dx.doi.org/10.1142/s0218127416300214.

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An electronic oscillator circuit is designed by connecting an inductor in series with a locally-active PTC Memristor and a battery. The PTC Memristor is locally active on the negative resistance region of its DC [Formula: see text]–[Formula: see text] curve. A DC operating point [Formula: see text] is chosen on the locally-active region of the PTC Memristor and a small-signal equivalent circuit at [Formula: see text] is derived via Taylor series. The small-signal admittance [Formula: see text] of the composite one-port in Fig. 1 is derived using the small-signal equivalent circuit at [Formula: see text], in series with an inductor whose value is chosen such that [Formula: see text] at some [Formula: see text]. The sinusoidal oscillation computed numerically from this circuit is shown to emerge from a supercritical Hopf bifurcation.

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Nguyen, Nhan Chi, Nghia Hoai Duong, and Anh Van Dinh. "Design and simulation of pulse generator for UWB based on LC-tank differential oscillators topology." Science and Technology Development Journal 18, no. 3 (August 30, 2015): 225–41. http://dx.doi.org/10.32508/stdj.v18i3.840.

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This paper presents a detailed analysis, design and simulation of pulse generator for Ultra-Wideband (UWB) based on LC-tank differential oscillators topology. The differential oscillators with a cross-coupled NMOS pair and a tail current source are used to achieve more positive gain and generate negative resistance to the LC-tank. Besides, this oscillator is suitable for UWB high frequency and low power applications. The UWB pulse generator is composed of a simple on-off keying (OOK) modulated and LC-tank differential oscillators. The circuit of UWB pulse generator designed and simulated in 0.13 um CMOS technology. The UWB pulse generator generates a pulse for the 6 - 10 GHz UWB transmitter. Simulation results show a pulse width of 586 ps, a peak to peak amplitude pulse of 88.6 mV from the 1.2 V power supply and the die area of 0.22 mm2. The average power consumption of approximately 0.55 mW and an energy consumption of 1.1 pJ/pulse at 500 MHz pulse repetition rate (PRR) are observed.

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Olshanskiy, Vasyl, Maksym Slipchenko, Igor Tverdokhlib, and Ihor Kupchuk. "OSCILLATIONS OF A PULSE LOADED OSCILLATOR WITH A SQUARE RESISTANCE IN THE COMPOSITION OF THE DISSIPATIVE FORCE." Vibrations in engineering and technology, no. 2(101) (June 29, 2021): 35–45. http://dx.doi.org/10.37128/2306-8744-2021-2-4.

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The unsteady oscillations of a dissipative oscillator caused by an instantaneous impulse of the force are described. The case is considered when the dissipative force consists of quadratic viscous resistance and dry friction, and the theoretical results are generalized to the case of the sum of three forces. The third is the force of positional friction. Formulas for calculating the ranges of oscillations have been constructed In this case, the Lambert function of negative and positive arguments is used. It is a tabulated special function. Its value can also be calculated using its known approximations in elementary functions. It is shown that, due to the action of the dissipative force, the process of post-pulse oscillations consists of a finite number of cycles and is limited in time. This is due to the presence of dry friction among the resistance components. Examples of calculations that illustrate the possibilities of the stated theory are given. In order to check the reliability of the derived calculation formulas, numerical computer integration of the differential equation of motion was also carried out. The convergence of the numerical results obtained by two different methods is shown. Thus, it has been confirmed that with the help of analytical solutions it is possible to find the extreme displacements of the oscillator without numerically solving its nonlinear differential equation of motion. Using Lambert function and the first integral of the equation of motion made it possible to derive precise calculation formulas for determining the range of oscillations caused by the pulsed load of the oscillator. The derived formulas are suitable for calculating the value of the instantaneous impulse applied to the oscillator, which refers to the inverse problems of mechanics. Thus, by measuring the maximum displacement of the oscillator, it is possible to identify the initial velocity or instantaneous impulse applied to the oscillator. The performed numerical computer integration of the output differential equation confirmed the adequacy of the obtained analytical solutions, which concern not only direct, but also inverse problems of dynamics.

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Olshanskiy, Vasyl, Maksym Slipchenko, Oleksandr Spolnik, and Mykhailo Zamrii. "FREE OSCILLATOR OSCILLATIONS IN THE PRESENCE OF QUADRATIC VISCOUS RESISTANCE AND DRY FRICTION." Vibrations in engineering and technology, no. 2(97) (August 27, 2020): 33–40. http://dx.doi.org/10.37128/2306-8744-2020-2-4.

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The article is devoted to the derivation of formulas for calculating the ranges of free damped oscillations of a double nonlinear oscillator. Using the Lambert function and the first integral of the nonlinear differential equation of motion, formulas are derived for calculating the ranges of free damped oscillations of a linearly elastic oscillator under the combined action of the forces of quadratic viscous resistance and Coulomb dry friction. The calculations involve a table of the specified special function of the negative argument. It is shown that the presence of viscous resistance reduces the duration of free oscillations to a complete stop of the oscillator. The set dynamics problem is also approximately solved by the energy balance method, and a numerical integration of the nonlinear differential equation of motion on a computer is carried out. The satisfactory convergence of the numerical results obtained in various ways confirmed the suitability of the derived closed formulas for engineering calculations. In addition to calculating the magnitude of the oscillations, the energy balance method is also used for an approximate solution of the inverse problem of dynamics, by identifying the values of the coefficient of quadratic resistance and dry friction force in the presence of an experimental vibrogram of free damped oscillations. An example of identification is given. This information on friction is needed to calculate forced oscillations, especially under resonance conditions. It is noted that from the obtained results, in some cases, well-known formulas follow, where the quadratic viscous resistance is not associated with dry friction.

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Semenov, Andriy. "THE DETERMINISTIC CHAOS OSCILLATOR BASED ON A FIELD-EFFECT TRANSISTOR STRUCTURE WITH NEGATIVE RESISTANCE FOR TELECOMMUNICATIONS SYSTEMS." Information and Telecommunication Sciences, no. 2 (December 31, 2016): 46–53. http://dx.doi.org/10.20535/2411-2976.22016.46-53.

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Xiantai, Wang, Jin Zhi, Wu Danyu, Shen Huajun, and Liu Xinyu. "A 10 GHz high-efficiency and low phase-noise negative-resistance oscillator optimized with a virtual loop model." Journal of Semiconductors 30, no. 11 (November 2009): 115001. http://dx.doi.org/10.1088/1674-4926/30/11/115001.

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Xia, H. M., J. W. Wu, and Z. P. Wang. "Corrigendum: The negative-differential-resistance (NDR) mechanism of a hydroelastic microfluidic oscillator (2017 J. Micromech. Microeng. 27 075001)." Journal of Micromechanics and Microengineering 27, no. 9 (August 21, 2017): 099501. http://dx.doi.org/10.1088/1361-6439/aa7669.

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Rowat, P. F., and A. I. Selverston. "Modeling the gastric mill central pattern generator of the lobster with a relaxation-oscillator network." Journal of Neurophysiology 70, no. 3 (September 1, 1993): 1030–53. http://dx.doi.org/10.1152/jn.1993.70.3.1030.

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1. The gastric mill central pattern generator (CPG) controls the chewing movements of teeth in the gastric mill of the lobster. This CPG has been extensively studied, but the precise mechanism underlying pattern generation is not well understood. The goal of this research was to develop a simplified model that captures the principle, biologically significant features of this CPG. We introduce a simplified neuron model that embodies approximations of well-known membrane currents, and is able to reproduce several global characteristics of gastric mill neurons. A network built with these neurons, using graded synaptic transmission and having the synaptic connections of the biological circuit, is sufficient to explain much of the network's behavior. 2. The cell model is a generalization and extension of the Van der Pol relaxation oscillator equations. It is described by two differential equations, one for current conservation and one for slow current activation. The model has a fast current that may, by adjusting one parameter, have a region of negative resistance in its current-voltage (I-V) curve. It also has a slow current with a single gain parameter that can be regarded as the combination of slow inward and outward currents. 3. For suitable values of the fast current parameter and the slow current parameter, the isolated model neuron exhibits several different behaviors: plateau potentials, postinhibitory rebound, postburst hyperpolarization, and endogenous oscillations. When the slow current is separated into inward and outward fractions with separately adjustable gain parameters, the model neuron can fire tonically, be quiescent, or generate spontaneous voltage oscillations with varying amounts of depolarization or hyperpolarization. 4. The most common form of synaptic interaction in the gastric CPG is reciprocal inhibition. A pair of identical model cells, connected with reciprocal inhibition, oscillates in antiphase if either the isolated cells are endogenous oscillators, or they are quiescent without plateau potentials, or they have plateau potentials but the synaptic strengths are below a critical level. If the isolated cells have widely differing frequencies (or would have if the cells were made to oscillate by adjusting the fast currents), reciprocal inhibition entrains the cells to oscillate with the same frequency but with phases that are advanced or retarded relative to the phases seen when the cells have the same frequency. The frequency of the entrained pair of cells lies between the frequencies of the original cells. The relative phases can also be modified by using very unequal synaptic strengths.(ABSTRACT TRUNCATED AT 400 WORDS)

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46

Goswami, S., L. Davis, S. Hong, J. Singh, P. K. Bhattacharya, and G. I. Haddad. "Negative differential resistance of GaAs/AlxGa1−xAs multiquantum well structures under high power photoexcitation: structure optimisation for an oscillator." Electronics Letters 28, no. 10 (May 7, 1992): 915–16. http://dx.doi.org/10.1049/el:19920580.

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47

Wu, J. W., H. M. Xia, Z. P. Wang, W. Wang, and H. J. Du. "Analyzing the Effects of Key Design Factors of a Negative-Differential-Resistance (NDR) Microfluidic Oscillator – An Equivalent-Circuit-Model Approach." Advances in Applied Mathematics and Mechanics 14, no. 6 (June 2022): 1381–99. http://dx.doi.org/10.4208/aamm.oa-2021-0269.

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48

Liu, Dongsheng, Ang Hu, and Kefeng Zhang. "A Quadrature Single Side-Band Mixer with Passive Negative Resistance in Software-Defined Frequency Synthesizer." Sensors 18, no. 10 (October 14, 2018): 3455. http://dx.doi.org/10.3390/s18103455.

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Software-defined radio (SDR) is a good solution for complying with the existing and incoming protocols for emerging wireless sensor networks (WSN) and internet of things (IoT) applications. The frequency synthesizer in a SDR tranceiver usually consists of a phase locked loop (PLL) and a post synthesizer. The PLL is the narrow band signal source and the post synthesizer generates wideband outputs by mixing and dividing. Compared with a frequency synthesizer utilizing the wideband PLL, this synthesizer features relatively constant loop parameters and mitigates the requirement for the oscillator. In this paper, a quadrature single side-band (QSSB) mixer with the proposed passive negative resistance (PNR) for frequency mixing in a post synthesizer is presented. The PNR is achieved by biasing the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) of the cross-coupled pair at the deep-triode region periodically and incorporates an inductor and a cap-array as the mixer load. Compared with the traditional single side-band mixers utilizing Inductor-Capacitor (LC) resonant loads or quality factor enhanced (Q-enhanced) LC resonant loads, which suffer from a selectivity versus working range trade-off, the mixer employing the proposed loading structure provides not only a wide operating range, but also a superior image side-band rejection ratio (ISRR). Moreover, the oscillating risk in conventional mixers adopting Q-enhanced LC resonant loads is eliminated. A wideband frequency synthesizer employing the proposed mixer was implemented in a TSMC 0.18 µm CMOS process and the mixer performed ISRR of 40–57 dB and 30–57 dB across 2.5–3 GHz and 2.3–3.2 GHz, respectively. The power consumption of the QSSB mixer, including buffer, is 18 mA from a 1.8 V supply and the active area is 0.445 mm2. The measurement results provide validation that the proposed QSSB mixer is suitable for wideband software-defined frequency synthesizers and other frequency generating systems.

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Osadchuk, A. V., V. S. Osadchuk, I. A. Osadchuk, D. R. Ilchuk, and G. A. Pastushenko. "Solid state radio-measuring optical-frequency transducer of gas flow rate." Physics and Chemistry of Solid State 22, no. 2 (April 20, 2021): 224–32. http://dx.doi.org/10.15330/pcss.22.2.224-232.

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The paper presents a study of a solid state radio-measuring optical-frequency transducer of gas consumption based on a transistor structure with a negative differential resistance. A mathematical model of a solid state radio-measuring optical-frequency flowmeter was developed, which made it possible to obtain the conversion function and the sensitivity equation. The solid state radio-measuring optical-frequency gas flowmeter is based on a transistor structure with a negative differential resistance, consisting of a HEMT field-effect transistor and a bipolar transistor with a passive inductive element. When replacing the passive inductance with an active inductive element, the transducer can be completely integrated. The negative differential resistance formed by the parallel connection of the impedance with the capacitive component on the collector-drain electrodes of the transistor structure and inductance leads to the occurrence of electrical oscillations in the oscillator circuit. Theoretical and experimental studies have shown that with an increase in gas consumption from 0 l/h to 4 l/h, the generation frequency decreases from 812.65 MHz to 811.62 MHz at a supply voltage of 3.3 V, and at a supply voltage of 3.8 V from 813.00 MHz to 811.80 MHz. It is shown that by choosing a constant voltage power supply mode, it is possible to obtain an almost linear dependence of the generation frequency on the gas flow rate and choose channels for transmitting measurement information. The obtained theoretical and experimental studies are in good agreement, the relative error does not exceed 2.5 %.

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Sotner, Roman, Jan Jerabek, Ladislav Polak, Radek Theumer, and Lukas Langhammer. "Electronic Tunability and Cancellation of Serial Losses in Wire Coils." Sensors 22, no. 19 (September 28, 2022): 7373. http://dx.doi.org/10.3390/s22197373.

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This work presents a novel methodology to adjust the inductance of real coils (electronically) and to cancel out serial losses (up to tens or even hundreds of Ohms in practice) electronically. This is important in various fields of electromagnetic sensors (inductive sensors), energy harvesting, measurement and especially in the instrumentation of various devices. State-of-the-art methods do not solve the problem of cancellation of real serial resistance, which is the most important parasitic feature in low- and middle-frequency bands. In this case, the employment of serial negative resistance is not possible due to stability issues. To solve this issue, two solutions allowing the cancellation of serial resistance by the value of the passive element and an electronically adjustable parameter are introduced. The operational ranges are between 0.1 and 1 mH and 0.1 and 10 mH, valid in bandwidths from hundreds of Hz up to hundreds of kHz. The proposed concepts are experimentally tested in two applications: an electronically tunable oscillator of LC type and an electronically tunable band-pass RLC filter. The presented methodology offers significant improvements in the process of circuit design employing inductors and can be beneficially used for on-chip design, where serial resistance issues can be very significant.

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