Relevant bibliographies by topics / Negative electron affinity (NEA)

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  2. Dissertations / Theses
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  4. Book chapters
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Academic literature on the topic 'Negative electron affinity (NEA)'

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Published: 6 September 2023

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Journal articles on the topic "Negative electron affinity (NEA)"

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Malta, D. P., J. B. Posthill, T. P. Humphreys, and R. J. Markunas. "Interpretation of secondary electron contrast from negative electron affinity diamond surfaces." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 120–21. http://dx.doi.org/10.1017/s0424820100136970.

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Diamond is a wide band-gap semiconductor with many unique physical properties that make it an attractive technological material. One such property is the negative electron affinity (NEA) behavior of the surface when properly terminated with hydrogen or a thin metal layer. The NEA diamond surface exhibits an unusually large secondary electron (SE) yield which is desirable for applications in cold cathode electron emitters of flat panel displays. Examination of NEA diamond surfaces by scanning electron microscopy (SEM) has indicated that a unique mechanism appears to be responsible for the SE contrast in which sub-surface microstructural information is contained. This paper provides a brief interpretation of the origin of SE contrast from the NEA diamond surface.The electron affinity of a semiconductor surface, χ, is defined by the position of the vacuum energy level, E0, relative to the conduction band minimum, Ec (Fig. la). If χ>0, excited conduction band electrons must migrate to the surface and arrive with sufficient kinetic energy to overcome the surface energy barrier in order to escape into vacuum.
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XIE, AI-GEN, YANG YU, YA-YI CHEN, YU-QING XIA, and HAO-YU LIU. "THEORETICAL RESEARCH OF SECONDARY ELECTRON EMISSION FROM NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS." Surface Review and Letters 26, no. 04 (May 2019): 1850181. http://dx.doi.org/10.1142/s0218625x18501810.

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Based on primary range [Formula: see text], relationships among parameters of secondary electron yield [Formula: see text] and the processes and characteristics of secondary electron emission (SEE) from negative electron affinity (NEA) semiconductors, the universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors were deduced, respectively; where [Formula: see text] is incident energy of primary electron. According to the characteristics of SEE from NEA semiconductors with [Formula: see text], [Formula: see text], deduced universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors and experimental data, special formulas for [Formula: see text] at 0.5[Formula: see text] of several NEA semiconductors with [Formula: see text] were deduced and proved to be true experimentally, respectively; where [Formula: see text] is the [Formula: see text] at which [Formula: see text] reaches maximum secondary electron yield. It can be concluded that the formula for [Formula: see text] of NEA semiconductors with [Formula: see text] was deduced and could be used to calculate [Formula: see text], and that the method of calculating the 1/[Formula: see text] of NEA semiconductors with [Formula: see text] is plausible; where [Formula: see text] is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of emitter, and 1/[Formula: see text] is mean escape depth of secondary electron.
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Kashima, M., S. Ishiyama, D. Sato, A. Koizumi, H. Iijima, T. Nishitani, Y. Honda, H. Amano, and T. Meguro. "Adsorption structure deteriorating negative electron affinity under the H2O environment." Applied Physics Letters 121, no. 18 (October 31, 2022): 181601. http://dx.doi.org/10.1063/5.0125344.

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Photocathodes with negative electron affinity (NEA) characteristics have various advantages, such as small energy spread, high spin polarization, and ultrashort pulsing. Nitride semiconductors, such as GaN and InGaN, are promising materials for NEA photocathodes because their lifetimes are longer than those of other materials. In order to further prolong the lifetime, it is important to better understand the deterioration of NEA characteristics. The adsorption of residual gases and back-bombardment by ionized residual gases shorten the lifetime. Among the adsorbed residual gases, H2O has a significant influence. However, the adsorption structures produced by the reaction with H2O are not comprehensively studied so far. In this study, we investigated adsorption structures that deteriorated the NEA characteristics by exposing InGaN and GaAs to an H2O environment and discussed the differences in their lifetimes. By comparing the temperature-programmed desorption curves with and without H2O exposure, the generation of CsOH was confirmed. The desorption of CsOH demonstrated different photoemission behaviors between InGaN and GaAs results. InGaN recovered its NEA characteristics, whereas GaAs did not. Considering the Cs desorption spectra, it is difficult for an NEA surface on InGaN to change chemically, whereas that for GaAs changes easily. The chemical reactivity of the NEA surface is different for InGaN and GaAs, which contributes to the duration of photoemission. We have attempted to prolong the lifetime of InGaN by recovering its NEA characteristics. We found that InGaN with NEA characteristics can be reused easily without thermal treatment at high temperatures.
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Yasuda, Hidehiro, Tomohiro Nishitani, Shuhei Ichikawa, Shuhei Hatanaka, Yoshio Honda, and Hiroshi Amano. "Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication." Quantum Beam Science 5, no. 1 (February 1, 2021): 5. http://dx.doi.org/10.3390/qubs5010005.

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The development of pulsed electron sources is applied to electron microscopes or electron beam lithography and is effective in expanding the functions of such devices. The laser photocathode can generate short pulsed electrons with high emittance, and the emittance can be increased by changing the cathode substrate from a metal to compound semiconductor. Among the substrates, nitride-based semiconductors with a negative electron affinity (NEA) have good advantages in terms of vacuum environment and cathode lifetime. In the present study, we report the development of a photocathode electron gun that utilizes photoelectron emission from a NEA-InGaN substrate by pulsed laser excitation, and the purpose is to apply it to material nanofabrication and high-speed observation using a pulsed transmission electron microscope (TEM) equipped with it.
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Feigl, C. A., B. Motevalli, A. J. Parker, B. Sun, and A. S. Barnard. "Classifying and predicting the electron affinity of diamond nanoparticles using machine learning." Nanoscale Horizons 4, no. 4 (2019): 983–90. http://dx.doi.org/10.1039/c9nh00060g.

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Using a combination of electronic structure simulations and machine learning we have shown that the characteristic negative electron affinity (NEA) of hydrogenated diamond nanoparticles exhibits a class-dependent structure/property relationship.
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Koizumi, Atsushi, Daiki Sato, Haruka Shikano, Hokuto Iijima, and Tomohiro Nishitani. "Dependence of electron emission current density on excitation power density from Cs/O-activated negative electron affinity InGaN photocathode." Journal of Vacuum Science & Technology B 40, no. 6 (December 2022): 062202. http://dx.doi.org/10.1116/6.0002124.

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The dependence of the electron emission current density on the excitation power density of a Cs/O-activated negative electron affinity (NEA) InGaN photocathode was investigated. The emission current density of the NEA-InGaN photocathode increased monotonically with the excitation power density in the measured range. The emission current density reached 5.6 × 103 A/cm2 at an excitation power density of 2.6 × 106 W/cm2. Using the electron thermal energy estimated by comparing simulation and experimental results [D. Sato, H. Shikano, A. Koizumi, T. Nishitani, Y. Honda, and H. Amano, J. Vac. Sci. Technol. B 39, 062209 (2021)], the reduced brightness of 4 × 108 A/m2 sr V was derived.
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INAGAKI, Yuta, Kazuya HAYASE, Ryosuke CHIBA, Hokuto IIJIMA, and Takashi MEGURO. "Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs." IEICE Transactions on Electronics E99.C, no. 3 (2016): 371–75. http://dx.doi.org/10.1587/transele.e99.c.371.

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Cai, Zhi Peng, Wen Zheng Yang, Wei Dong Tang, and Xun Hou. "Theoretical Energy Distributions of Electrons from a Large Exponential-Doping GaAs Photocathode." Advanced Materials Research 415-417 (December 2011): 1302–5. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1302.

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Theoretical calculation indicates that the large exponential-doping GaAs photocathodes have a much narrower electron energy distribution than traditional GaAs NEA cathodes, and the excellent performance attributes to the special structure characters of the band-bending region and lower negative electron affinity of the new-type GaAs photocathodes. The effects of surface doping concentration and work function on the energy distribution are discussed in details, and the FWHM of the energy distribution is less than 100meV. The simulation results indicate that the large exponential-doping mode further improves the features of the electron energy spreads for GaAs photocathodes, which may meet the further demand of next generation of electron guns.
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Yater, J. E. "Secondary electron emission and vacuum electronics." Journal of Applied Physics 133, no. 5 (February 7, 2023): 050901. http://dx.doi.org/10.1063/5.0130972.

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Secondary electron emission serves as the foundation for a broad range of vacuum electronic devices and instrumentation, from particle detectors and multipliers to high-power amplifiers. While secondary yields of at least 3–4 are required in practical applications, the emitter stability can be compromised by surface dynamics during operation. As a result, the range of practical emitter materials is limited. The development of new emitter materials with high yield and robust operation would advance the state-of-the-art and enable new device concepts and applications. In this Perspective article, I first present an analysis of the secondary emission process, with an emphasis on the influence of material properties. From this analysis, ultra-wide bandgap (UWBG) semiconductors and oxides emerge as superior emitter candidates owing to exceptional surface and transport properties that enable a very high yield of low-energy electrons with narrow energy spread. Importantly, exciting advances are being made in the development of promising UWBG semiconductors such as diamond, cubic boron nitride (c-BN), and aluminum nitride (AlN), as well as UWBG oxides with improved conductivity and crystallinity. These advances are enabled by epitaxial growth techniques that provide control over the electronic properties critical to secondary electron emission, while advanced theoretical tools provide guidance to optimize these properties. Presently, H-terminated diamond offers the greatest opportunity because of its thermally stable negative electron affinity (NEA). In fact, an electron amplifier under development exploits the high yield from this NEA surface, while more robust NEA diamond surfaces are demonstrated with potential for high yields in a range of device applications. Although c-BN and AlN are less mature, they provide opportunities to design novel heterostructures that can enhance the yield further.
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Bae, Jai Kwan, Matthew Andorf, Adam Bartnik, Alice Galdi, Luca Cultrera, Jared Maxson, and Ivan Bazarov. "Operation of Cs–Sb–O activated GaAs in a high voltage DC electron gun at high average current." AIP Advances 12, no. 9 (September 1, 2022): 095017. http://dx.doi.org/10.1063/5.0100794.

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Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current ([Formula: see text]1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs–Sb–O NEA layer with minimal adverse effects. In this work, we operate GaAs photocathodes with this new activation method in a high voltage environment to extract a high current. We demonstrate that improved chemical resistance of Cs–Sb–O activated GaAs photocathodes allowed them to survive a day-long transport process from a separate vacuum system using a vacuum suitcase. During beam running, we observed spectral dependence on lifetime improvement. In particular, we saw a 45% increase in the lifetime at 780 nm on average for Cs–Sb–O activated GaAs compared to Cs–O activated GaAs.
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Dissertations / Theses on the topic "Negative electron affinity (NEA)"

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Behera, Swayamprabha. "STABILITY AND SPECTROSCOPIC PROPERTIES OF NEGATIVE IONS." VCU Scholars Compass, 2011. http://scholarscompass.vcu.edu/etd/210.

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Negative ions play an important role in chemistry as building blocks of salts and oxidizing agents. Halogen atoms, due to their ability to attract electrons, readily form negative ions. Considerable interest exists in the design and synthesis of new negative ions called superhaogens whose electron affinities are much higher than those of halogen atoms. This thesis deals with the design of such species. Using density functional theory I have studied two classes of superhalogens. First one involves d1 transition metal (Sc, Y, La) atoms surrounded by Cl while the second one involves simple metals (Na, Mg, Al) surrounded by pseudohalogens such as CN. Geometry, electronic structure, and electron affinity of these species containing up to 5 ligands have been calculated. Studies reveal a fundamental difference between the interaction of transition and metal atoms with electronegative ligands. In addition, pseudohalogens can be used to synthesize a new class of superhalogens.
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Martin, Tomas Liam. "Lithium oxygen termination as a negative electron affinity surface on diamond : a computational and photoemission study." Thesis, University of Bristol, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.559712.

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Modukuru, Yamini. "Theoretical & Experimental Investigation of Low and Negative Electron Affinity Cold Cathodes Based on Rare-Earth Monosulfides." Cincinnati, Ohio : University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1060256450.

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Child, Brandon. "AROMATICITY RULES IN THE DEVELOPMENT OF NEGATIVE IONS." VCU Scholars Compass, 2014. http://scholarscompass.vcu.edu/etd/3355.

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Organic molecules are known for their stability due to aromaticity. Superhalogens, on the other hand, are highly reactive anions, whose electron affinity is larger than that of chlorine. This thesis, using first principles calculations, explores possible methods for creation of superhalogen aromatic molecules while attempting to also develop a fundamental understanding of the physical properties behind their creation. The first method studied uses anionic cyclopentadienyl and enhances its electron affinity through ligand substitution or ring annulation in combination with core substitutions. The second method studies the possibilities of using benzene, which has a negative electron affinity (EA), as a core to attain similar results. These cases resulted in EAs of 5.59 eV and 5.87 eV respectively, showing that aromaticity rule can be used to create strong anionic organic molecules. These studies will hopefully lead to new advances in the development of organic based technology.
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THACHERY, JUGUL RAVINDRAN. "SYNTHESIS AND CHARACTERIZATION OF NEODYMIUM SULFIDE BULK SAMPLES AND THIN FILMS." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1012424793.

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KRISHNAN, RAJESH. "ANALYSIS OF HIGH-FREQUENCY CHARACTERISTICS OF PLANAR COLD CATHODES." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1061215895.

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Samanta, Devleena. "UNCONVENTIONAL SUPERHALOGENS: DESIGN AND APPLICATIONS." VCU Scholars Compass, 2012. http://scholarscompass.vcu.edu/etd/2844.

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Electron affinity is one of the most important parameters that guide chemical reactivity. Halogens have the highest electron affinities among all elements. A class of molecules called superhalogens has electron affinities even greater than that of Cl, the element with the largest electron affinity (3.62 eV). Traditionally, these are metal-halogen complexes which need one electron to close their electronic shell. Superhalogens have been known to chemistry for the past 30 years and all superhalogens investigated in this period are either based on the 8-electron rule or the 18-electron rule. In this work, we have studied two classes of unconventional superhalogens: borane-based superhalogens designed using the Wade-Mingo’s rule that describes the stability of closo-boranes, and pseudohalogen based superhalogens. In addition, we have shown that superhalogens can be utilized to build hyperhalogens, which have electron affinities exceeding that of the constituent superhalogens, and also to stabilize unusually high oxidation states of metals.
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Bresteau, David. "Amplification de la réaction de photodétachement." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS311/document.

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Le cœur du travail de notre groupe est l'étude de la réaction de photodétachement, qui consiste en l'expulsion de l'électron excédentaire d'un ion négatif lors de l'absorption d'un photon. Ce travail de thèse s'articule autour de deux projets : la microscopie de photodétachement, technique d'interférométrie électronique permettant de produire des données spectroscopiques sur les ions négatifs ; et le projet SIPHORE qui envisage la neutralisation d'un jet rapide d'ions négatifs à partir de la réaction de photodétachement, dans le but de servir la maîtrise de la fusion thermonucléaire contrôlée. Les évolutions de ces deux projets se recoupent dans la nécessité d'augmenter le nombre d'événements de photodétachement produits en un temps donné. Ce travail a permis d'étudier et de mettre en place différentes techniques expérimentales pour réaliser l'amplification de la réaction de photodétachement. Notre montage nous permet de produire cette réaction dans une zone d'interaction formée par l'intersection d'un jet d'ions et d'un faisceau laser. Nous envisageons d'une part la modification de la section efficace de photodétachement lorsque la réaction est produite en présence d'un champ magnétique, d'autre part l'amplification du flux de photons dans la zone d'interaction par stockage de lumière en cavité optique. Les avancées réalisées ouvrent de nouvelles perspectives sur les études fondamentales et les applications techniques liées aux ions négatifs
The core of the work of our group is the photodetachment reaction, which consists in the expulsion of the extra electron of a negative ion by the absorption of a photon. This thesis work is organised around two projects: the photodetachment microscopy, an electron interferometric technique which produces spectroscopic data on negative ions; and the SIPHORE project which considers the neutralization of a fast negative ions beam by the help of the photodetachment process, for the purpose of controlled thermonuclear fusion. The evolutions of these two projects are overlapping in the need of increasing the number of photodetachment events produced per unit of time. This work has led to the study and the implementation of several experimental techniques to realise the amplification of the photodetachment reaction. Our setup permits to produce this reaction in an interaction area formed by the intersection of a negative ions beam with a laser beam. On the one hand we investigate the modification of the photodetachment cross section when the reaction is produced under a magnetic field. On the other hand we consider the amplification of the photon flux inside the interaction region using light storage with optical cavities. The results obtained pave the way towards new prospects for the fundamental studies and the technical applications affiliated with negative ions
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Vandevraye, Mickael. "Microscopie et spectroscopie de photodétachement; mesure de la section efficace de photodétachement de H- à 1064 nm par observation du comportement asymptotique du régime saturé." Phd thesis, Université Paris Sud - Paris XI, 2013. http://tel.archives-ouvertes.fr/tel-00932446.

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Dans cette thèse, nous initions la démonstration, à échelle réduite, de la faisabilité du photodétachement presque total, par laser, d'un jet d'ions négatifs d'hydrogène en cavité optique Fabry-Perot pour les futurs injecteurs de neutres destinés au chauffage des plasmas des réacteurs de fusion nucléaire.Nous élaborons une nouvelle méthode de mesure d'une section efficace de photodétachement, dont la connaissance à la longueur d'onde d'excitation est requise pour le dimensionnement de la cavité Fabry-Perot, basée sur l'observation de la saturation en régime d'éclairement impulsionnel. Le calcul analytique de l'accroissement du signal de détachement produit lors de l'éclairement d'un jet d'ions par une impulsion laser supposée gaussienne, fait apparaître une contrainte mathématique sur le flux requis pour transiter vers le régime saturé. Cette contrainte est une caractéristique de la transition vers la saturation pour toutes les expériences réalisées en faisceau gaussien et pour tous les processus d'interaction lumière-matière linéaires. Avec cette méthode, nous déduisons une section efficace de photodétachement de H- à 1064 nm - longueur d'onde sélectionnée pour les futurs injecteurs de neutres - en léger désaccord avec les prédictions théoriques.Pour réduire les exigences technologiques sur la cavité et le laser, nous étudions les résonances de Landau qui apparaissent dans le spectre de photodétachement en champ magnétique. S'asservir sur l'une de ces résonances permettrait d'augmenter la probabilité de photodétachement à un flux donné.Par ailleurs, nous présentons nos mesures des affinités électroniques du phosphore, du sélénium et de l'étain, réalisées avec le microscope de photodétachement. L'expérience de microscopie de photodétachement du phosphore est la première où l'atome neutre est laissé dans un terme excité.
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Rath, Pranaya Kishore. "Experimental Investigation of Electrons In and Above Liquid Helium." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5838.

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Electrons on the surface of liquid helium form a nearly ideal 2-dimensional electron system (2DES). An electron density up to 2 × 10^9 cm-2, known as the critical electron density, can be achieved on the liquid helium surface, above which an electro-hydrodynamic (EHD) instability sets in, which results in the formation of MEBs. Due to this limitation in maximum possible density, only the classical liquid and solid phases of the 2DES can be accessed in this system. But at the same time, on the surface of thin liquid helium film and with the multi-electron bubbles (MEBs), it may be possible to achieve high electron density than that of the critical electron density. This can allow the observation of quantum melting, i.e., the phase transition between the quantum solid to the liquid phase of the 2DES. Although extensive theoretical and experimental studies have already been done, the quantum melting transition has not been achieved experimentally on these systems yet. In this thesis, we have used multiple new experimental approaches to obtain electron densities higher than what has been achieved before and to study the MEBs effectively. First, we studied the temporal dynamics of the EHD instability and the effect of the applied electric field and charge density on the instability. The unstable wave vectors were determined experimentally, and their temporal growth was studied carefully. The determined unstable wave vectors were found to be a good match with the theoretically expected values obtained from the dispersion relation. At the same time, the analysis of the growth rate of unstable vectors were found to be limited by the kinematic viscosity of the liquid helium. Next, we investigated the lifetime of MEBs trapped on a dielectric surface and compared the result with previous results on free bubbles in bulk liquid helium. The reduced lifetime of trapped bubbles suggested an impact of convective heat flow around the bubbles on their lifetimes. Then we performed an experimental investigation that confirmed the effect of convective heat flow direction inside the experimental cell on the lifetime of such trapped MEBs. Determination of the electronic phase inside an MEB is one of the biggest challenges of the time. Unfortunately, there is no direct way or technique for such investigation. We discussed how the MEB surface fluctuation with an external oscillating electric field could be observed, which may allow a possible way of studying the phase of the 2DES. We studied the surface fluctuations of electrically excited MEBs and observed different normal mechanical modes of the bubble wall. Then we extended our discussion on why liquid helium-4 is not a suitable medium to study the MEBs at low temperatures (below λ), where interesting phenomena occur, and how liquid helium-3, based on its physical property, can be a suitable replacement for this purpose. We generated MEBs inside liquid helium for the first time. The generated MEBs at 1.1 K were found to be stable with long lifetimes. This result opens the possibility of studying the MEBs at much lower temperatures where quantum properties dominate over classical for the 2DES. Finally, we discussed the problem associated with achieving high electron density on the thin helium film and how integrating an NEA material as a substrate can help us overcome the problem. We fabricated NEA materials, i.e., cBN pellet, and optimized the rf sputtering deposition of cBN film. We performed a preliminary pick-up measurement on the charged thin helium with these materials as substrates, which showed some positive indications that need to be confirmed with further advanced experimental investigations.
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Books on the topic "Negative electron affinity (NEA)"

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L, Krainsky I., and United States. National Aeronautics and Space Administration., eds. Negative electron affinity effect on the surface of chemical vapor deposited diamond polycrystalline films. [Washington, D.C: National Aeronautics and Space Administration, 1996.

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M, Asnin Vladimir, Petukhov Andre G, and NASA Glenn Research Center, eds. Secondary electron emission spectroscopy of diamond surfaces. [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 1999.

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Bandis, Christos. Electron emission properties of negative electron affinity diamond surfaces. 1994.

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Negative electron affinity effect on the surface of chemical vapor deposited diamond polycrystalline films. [Washington, D.C: National Aeronautics and Space Administration, 1996.

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Book chapters on the topic "Negative electron affinity (NEA)"

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Ciccacci, Franco. "Photoemission from AlGaAs/GaAs Heterojunctions and Quantum Wells under Negative Electron Affinity Conditions." In NATO ASI Series, 317–32. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4757-6565-6_20.

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Takeuchi, Daisuke, and Satoshi Koizumi. "Diamond PN/PIN Diode Type Electron Emitter with Negative Electron Affinity and Its Potential for the High Voltage Vacuum Power Switch." In Topics in Applied Physics, 237–72. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-09834-0_8.

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"Negative-Electron-Affinity Photocathode." In Complete Guide to Semiconductor Devices, 491–99. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9781118014769.ch64.

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HERMANN, C., H. J. DROUHIN, G. LAMPEL, Y. LASSAILLY, D. PAGET, J. PERETTI, R. HOUDRÉ, F. CICCACCI, and H. RIECHERT. "Photoelectronic Processes in Semiconductors Activated to Negative Electron Affinity." In Spectroscopy of Nonequilibrium Electrons and Phonons, 397–460. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89637-7.50014-4.

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Zhang, F. S., and T. R. Yu. "Reactions with Hydrogen Ions." In Chemistry of Variable Charge Soils. Oxford University Press, 1997. http://dx.doi.org/10.1093/oso/9780195097450.003.0013.

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Hydrogen ion is one kind of cation which possesses many properties common to all cations. Hydrogen ion also has its own characteristic features which are of particular significance for variable charge soils. The interactions between hydrogen ions and the surface of soil particles is the basic cause of the variability of both positive and negative surface charges of variable charge soils. The quantity of hydrogen ions in soils determines the acidity of the soil while the acidity of variable charge soils is among the strongest in all the soils. This strong acidity of variable charge soils affects many other chemical properties of the soil. In this chapter, the basic properties of hydrogen ions will be briefly discussed. Then, the products and the kinetics of the interaction between hydrogen ions and variable charge soils will be treated. The dissociation of hydrogen ions from the surface of soil particles has already been mentioned in Chapter 2. After the dissociation of an electron, a hydrogen atom becomes a proton (H+ ion). The ionization energy of hydrogen atoms is 1310 kj mol-1, whereas those of alkali metals, Li, Na, K, and Cs, are 519, 494, 419 and 377 kj mol-1, respectively. This difference in the ionization energy between hydrogen and alkali metals indicates that protons have a particularly strong affinity for electrons. Therefore, protons are apt to form a covalent bond with other atoms by sharing a pair of electrons, or to form a hydrogen bond. Because of the absence of an electronic shell, a proton has a diameter of the order of 10-13 cm, while other ions with electronic shells generally have a diameter of the order of 10-8 cm. Because a proton is so small, it is quite accessible to its neighboring ions and molecules. Therefore, there is very little steric hindrance when protons participate in chemical reactions. The above-mentioned features of proton are the basis for its particular properties. Free proton in solution is extremely unstable because it is very active. In an aqueous solution it will react with water molecules to form a hydrated proton, H3O+.
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Conference papers on the topic "Negative electron affinity (NEA)"

1

Morishita, Hideo. "Evaluating brightness of pulsed electron gun using high-brightness negative electron affinity (NEA) photocathode." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.549.

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Baum, Aaron W., William E. Spicer, Roger Fabian W. Pease, Kenneth A. Costello, and Verle W. Aebi. "Negative electron affinity photocathodes as high-performance electron sources. Part 1: achievement of ultrahigh brightness from an NEA photocathode." In SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, edited by Eric Munro and Henry P. Freund. SPIE, 1995. http://dx.doi.org/10.1117/12.221575.

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3

Sanford, Colin A., and Noel C. MacDonald. "Electron Beam Generation Based On Negative Electron Affinity Photocathodes." In 1989 Microlithography Conferences, edited by Kevin M. Monahan. SPIE, 1989. http://dx.doi.org/10.1117/12.953076.

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4

Fu, Rongguo, Benkang Chang, Yunsheng Qian, Guihua Wang, and Zhiyuan Zong. "Evaluation system of negative electron affinity photocathode." In Asia-Pacific Optical and Wireless Communications Conference and Exhibit, edited by Tien Pei Lee and Qiming Wang. SPIE, 2001. http://dx.doi.org/10.1117/12.444932.

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5

Chae, Hyun Uk, Ragib Ahsan, and Rehan Kapadia. "Electronically Tunable Negative Electron Affinity Silicon Photoemitters." In 2021 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2021. http://dx.doi.org/10.1109/icops36761.2021.9588524.

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6

Bazarov, I. V., B. M. Dunham, F. Hannon, Y. Li, X. Liu, T. Miyajima, D. G. Ouzounov, and C. K. Sinclair. "Thermal emittance measurements from negative electron affinity photocathodes." In 2007 IEEE Particle Accelerator Conference. IEEE, 2007. http://dx.doi.org/10.1109/pac.2007.4441036.

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7

Qiao, Jianliang, Yingpeng Yin, Youtang Gao, Jun Niu, Yunsheng Qian, and Benkang Chang. "Surface cleaning for negative electron affinity GaN photocathode." In 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), edited by Yadong Jiang, Junsheng Yu, and Zhifeng Wang. SPIE, 2012. http://dx.doi.org/10.1117/12.977891.

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Qiao, Jianliang, Benkang Chang, Yunsheng Qian, Xiaoqing Du, Yijun Zhang, and Xiaohui Wang. "Preparation of negative electron affinity gallium nitride photocathode." In 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, edited by Ya-Dong Jiang, Bernard Kippelen, and Junsheng Yu. SPIE, 2010. http://dx.doi.org/10.1117/12.864677.

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Zhang, Junju, Xiaohui Wang, Wenzheng Yang, Weidong Tang, Xiaoqian Fu, Biao Li, and Benkang Chang. "Photoemission stability of negative electron affinity GaN photocathode." In Photonics Asia, edited by Xuping Zhang, Hai Ming, and Joel M. Therrien. SPIE, 2012. http://dx.doi.org/10.1117/12.2001125.

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10

Guo, Tailiang, and Huai Rong Gao. "Photoemission stability of negative-electron-affinity GaAs photocathodes." In Photoelectronic Detection and Imaging: Technology and Applications '93, edited by LiWei Zhou. SPIE, 1993. http://dx.doi.org/10.1117/12.142004.

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