Academic literature on the topic 'Narrow band gap'
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Journal articles on the topic "Narrow band gap"
Cui, Qiuhong, and Guillermo C. Bazan. "Narrow Band Gap Conjugated Polyelectrolytes." Accounts of Chemical Research 51, no. 1 (December 14, 2017): 202–11. http://dx.doi.org/10.1021/acs.accounts.7b00501.
Full textHenson, Zachary B., Gregory C. Welch, Thomas van der Poll, and Guillermo C. Bazan. "Pyridalthiadiazole-Based Narrow Band Gap Chromophores." Journal of the American Chemical Society 134, no. 8 (February 17, 2012): 3766–79. http://dx.doi.org/10.1021/ja209331y.
Full textFilonov, A. B., D. B. Migas, V. L. Shaposhnikov, V. E. Borisenko, and A. Heinrich. "Narrow-gap semiconducting silicides: the band structure." Microelectronic Engineering 50, no. 1-4 (January 2000): 249–55. http://dx.doi.org/10.1016/s0167-9317(99)00289-0.
Full textWalukiewicz, Wladek. "Narrow band gap group III-nitride alloys." Physica E: Low-dimensional Systems and Nanostructures 20, no. 3-4 (January 2004): 300–307. http://dx.doi.org/10.1016/j.physe.2003.08.023.
Full textHayase, Shuzi. "Perovskite solar cells with narrow band gap." Current Opinion in Electrochemistry 11 (October 2018): 146–50. http://dx.doi.org/10.1016/j.coelec.2018.10.017.
Full textGalaiko, V. P., E. V. Bezuglyi, E. N. Bratus’, and V. S. Shumeiko. "Relaxation processes and kinetic phenomena in narrow-gap superconductors." Soviet Journal of Low Temperature Physics 14, no. 4 (April 1, 1988): 242–44. https://doi.org/10.1063/10.0031925.
Full textDashevsky, Z., V. Kasiyan, S. Asmontas, J. Gradauskas, E. Shirmulis, E. Flitsiyan, and L. Chernyak. "Photothermal effect in narrow band gap PbTe semiconductor." Journal of Applied Physics 106, no. 7 (October 2009): 076105. http://dx.doi.org/10.1063/1.3243081.
Full textJenekhe, Samson A. "A class of narrow-band-gap semiconducting polymers." Nature 322, no. 6077 (July 1986): 345–47. http://dx.doi.org/10.1038/322345a0.
Full textSofo, J. O., and G. D. Mahan. "Electronic structure ofCoSb3:A narrow-band-gap semiconductor." Physical Review B 58, no. 23 (December 15, 1998): 15620–23. http://dx.doi.org/10.1103/physrevb.58.15620.
Full textMahanti, S. D., Khang Hoang, and Salameh Ahmad. "Deep defect states in narrow band-gap semiconductors." Physica B: Condensed Matter 401-402 (December 2007): 291–95. http://dx.doi.org/10.1016/j.physb.2007.08.169.
Full textDissertations / Theses on the topic "Narrow band gap"
VALLONE, MARCO ERNESTO. "Physics-based simulation of narrow and wide band gap photonic devices." Doctoral thesis, Politecnico di Torino, 2016. http://hdl.handle.net/11583/2639782.
Full textMolis, Gediminas. "Investigation of the terahertz pulse generation from the narrow band gap semiconductor surfaces." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2010. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093655-47390.
Full textTHz spinduliuotės generavimas iš puslaidininkių paviršiaus turi didelį potencialą puslaidininkių fizikinėms savybėms tirti. Šis darbas skiriamas puslaidininkių tyrimams generuojant THz impulsus iš jų paviršių, apšviestų femtosekundiniais lazerio impulsais. THz spinduliuotė iš puslaidininkių paviršių gali būti generuojama dėl visos eilės fizikinių mechanizmų: paviršinio lauko ekranavimo, foto-Demberio efekto, optinio lyginimo, elektriniu lauku indukuoto optinio lyginimo, plazminių svyravimų, koherentinių fononų ir plazmonų. Tiriant THz spinduliuotės generacijos mechanizmus galima išmatuoti daug svarbių puslaidininkių parametrų, tokių kaip lūžio rodiklis, judris, krūvininkų gyvavimo trukmė, aukštesniųjų laidumo slėnių padėtys. Darbo metu tirti THz spinduliuotės generacijos puslaidininkio paviršiuje mechanizmai keičiant žadinimo sąlygas: aplinkos temperatūrą, magnetinį lauką, žadinančio lazerio bangos ilgį ir intensyvumą, bei impulso trukmę. Ištyrus visą eilę įvairių puslaidininkių nustatyta, kad geriausias THz spinduliuotės emiteris žadinant 800 nm bangos ilgio spinduliuote yra p-InAs. Pirmą kartą THz žadinimo spektroskopijos metodu tiesiogiai išmatuoti tarpslėniniai atstumai InxGa1-xAs , InAs ir InSb bandiniuose.
Sapkota, Gopal. "Synthesis Strategies and a Study of Properties of Narrow and Wide Band Gap Nanowires." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc499984/.
Full textKotitschke, Ralf Thomas. "The effects of band structure on recombination processes in narrow gap materials and laser diodes." Thesis, University of Surrey, 1999. http://epubs.surrey.ac.uk/843643/.
Full textAnyebe, Ezekiel. "Growth of narrow band gap semiconductor nanowires on silicon and graphitic substrates by droplet epitaxy." Thesis, Lancaster University, 2015. http://eprints.lancs.ac.uk/74590/.
Full textWayzani, Abdel Aziz. "[Ρt]-οligοmers as nοvel dοnοrs fοr bulk heterοjunctiοn sοlar cell applicatiοn." Electronic Thesis or Diss., Normandie, 2024. http://www.theses.fr/2024NORMC240.
Full textThis manuscript focuses on developing [Pt]-oligomers as novel donors for bulk heterojunction organic solar cells, aiming to enhance their performance through structural modifications. The work is divided into three main parts. The first part addresses the reduction of the band gap in [Pt]-oligomers by modifying the ligand structure to improve conjugation length, planarity, quinone stabilization, and the "push-pull" effect, specifically through the inclusion of 3,4ethylenedioxythiophene (EDOT). This approach led to new donor materials that achieved an average power conversion efficiency (PCE) of 14.81% with non-fullerene acceptors in binary bulk heterojunction solar cells and 15.97% in ternary bulk heterojunction cells. The second part focuses on enhancing the molecular organization of [Pt]-oligomers by integrating a triphenylene discotic mesogenic group into the conjugated backbone via a spacer. It was found that replacing a rigid triazole spacer with a more flexible linear aliphatic spacer improved the properties of the [Pt]-oligomers, resulting in an increase in the average PCE from 13.36% to 15.93%. The third part explores further improvements by synthesizing [Pt]oligomers with extended conjugated lengths and a discotic organizing group connected through an aliphatic spacer. Ligands that incorporate both EDOT and the triphenylene group, connected by an aliphatic spacer, demonstrated promising properties, suggesting the need for further synthesis to fully test and validate these improvements on [Pt]-oligomers
Berenguer, Verdú Antonio José. "Analysis and design of efficient passive components for the millimeter-wave and THz bands." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/84004.
Full textEsta tesis aborda problemas actuales en el análisis y diseño de componentes pasivos en las bandas de onda milimétrica y Terahercios (THz). Se presentan nuevas técnicas de análisis y modelado de estructuras complejas, procedimientos de diseño, e implementación práctica de dispositivos pasivos avanzados. La primera parte de la tesis se dedica a componentes pasivos de THz. Actualmente no se disponen de guías de onda adecuadas a THz debido a que ambos, metales y dieléctricos, introducen grandes pérdidas. En consecuencia, no es adecuado escalar las estructuras metálicas cerradas usadas en microondas, ni las guías dieléctricas usadas a frecuencias ópticas. Entre un gran número de recientes propuestas, la Single Wire Waveguide (SWW) destaca por su baja atenuación y casi nula dispersión. No obstante, como guía superficial, la SWW presenta difícil excitación y radiación en curvas. El uso de un recubrimiento dieléctrico, creando la Dielecric-Coated Single Wire Waveguide (DCSWW), alivia estos inconvenientes, pero las ventajas anteriores se pierden y nuevos problemas aparecen. Hasta la fecha, no se han encontrado soluciones adecuadas para la radiación en curvas de la SWW. Además, se echa en falta una caracterización rigurosa de ambas guías. Esta tesis presenta, por primera vez, un análisis modal completo de SWW y DCSWW, adecuado a la banda de THz. Este análisis es aplicado posteriormente para evitar el problema de la radiación en curvas. Se presentan y validan experimentalmente diversas estructuras y procedimientos de diseño. La segunda parte de la tesis abarca componentes pasivos de ondas milimétricas. Actualmente, estos componentes sufren una importante degradación de su respuesta debido a que resulta difícil asegurar contacto metálico y alineamiento adecuados para la operación a longitudes de onda tan pequeñas. Además, la absorción dieléctrica incrementa notablemente a estas frecuencias. En consecuencia, tanto guías metálicas huecas como líneas de transmisión planares convencionales presentan gran atenuación, siendo necesario considerar topologías alternativas. Las Gap Waveguides (GWs), basadas en una estructura periódica que introduce un efecto de Electromagnetic Bandgap, resultan muy adecuadas puesto que no requieren contacto entre partes metálicas y evitan las pérdidas en dieléctricos. No obstante, a pesar del potencial de las GWs, varias barreras impiden la consolidación y uso universal de esta tecnología. Por una parte, la compleja topología de las GWs dificulta el proceso de diseño dado que las simulaciones de onda completa consumen mucho tiempo y no existen actualmente métodos de análisis y diseño apropiados. Por otra parte, es necesario evidenciar el beneficio de usar GWs mediante dispositivos GW de altas prestaciones y comparativas adecuadas con estructuras convencionales. Esta tesis presenta diversos métodos de análisis eficientes, modelos, y técnicas de diseño que permitirán la síntesis de dispositivos GW sin necesidad de un conocimiento profundo de esta tecnología. Asimismo, se presentan varios filtros de banda estrecha operando en las bandas Ka y V con altas prestaciones, así como una comparativa rigurosa con la guía rectangular.
Aquesta tesi aborda problemes actuals en relació a l'anàlisi i disseny de components passius en les bandes d'ona mil·limètrica i Terahercis. Es presenten noves tècniques d'anàlisi i modelatge d'estructures complexes, procediments de disseny, i implementació pràctica de dispositius passius avançats. La primera part de la tesi es focalitza en components passius de THz. Actualment no es disposen de guies d'ona adequades a THz causa que tots dos, metalls i dielèctrics, introdueixen grans pèrdues. En conseqüència, no és adequat escalar les estructures metál·liques tancades usades en microones, ni les guies dielèctriques usades a freqüències òptiques. Entre un gran nombre de propostes recents, la Single Wire Waveguide (SWW) destaca per la seua baixa atenuació i quasi nul·la dispersió. No obstant això, com a guia superficial, la SWW presenta difícil excitació i radiació en corbes. L'ús d'un recobriment dielèctric, creant la Dielecric-Coated Single Wire Waveguide (DCSWW), alleuja aquests inconvenients, però els avantatges anteriors es perden i nous problemes apareixen. Fins a la data, no s'han trobat solucions adequades per a la radiació en corbes de la SWW. A més, es troba a faltar una caracterització rigorosa d'ambdues guies. Aquesta tesi presenta, per primera vegada, un anàlisi modal complet de SWW i DCSWW, adequat a la banda de THz. Aquest anàlisi és aplicat posteriorment per evitar el problema de la radiació en corbes. Es presenten i validen experimentalment diverses estructures i procediments de disseny. La segona part de la tesi es centra en components passius d'ones mil·limètriques. Actualment, aquests components pateixen una important degradació de la seua resposta a causa de que resulta difícil assegurar contacte metàl·lic i alineament adequats per a l'operació a longituds d'ona tan menudes. A més, l'absorció dielèctrica incrementa notablement a aquestes freqüències. En conseqüència, tant guies metàl·liques buides com línies de transmissió planars convencionals presenten gran atenuació, sent necessari considerar topologies alternatives. Les Gap Waveguides (GWs), basades en una estructura periòdica que introdueix un efecte de Electromagnetic Bandgap, resulten molt adequades ja que no requereixen contacte entre parts metàl·liques i eviten les pèrdues en dielèctrics. No obstant, tot i el potencial de les GWs, diverses barreres impedixen la consolidació i ús universal d'aquesta tecnologia. D'una banda, la complexa topologia de les GWs dificulta el procés de disseny atés que les simulacions d'ona completa consumeixen molt de temps i no existeixen actualment mètodes d'anàlisi i disseny apropiats. D'altra banda, és necessari evidenciar el benefici d'utilitzar GWs mitjançant dispositius GW d'altes prestacions i comparatives adequades amb estructures convencionals. Aquesta tesi presenta diversos mètodes d'anàlisi eficients, models, i tècniques de disseny que permetran la síntesi de dispositius GW sense necessitat d'un coneixement profund d'aquesta tecnologia. Així mateix, es presenten diversos filtres de banda estreta operant en les bandes Ka i V amb altes prestacions, així com una comparativa rigorosa amb la guia rectangular.
Berenguer Verdú, AJ. (2017). Analysis and design of efficient passive components for the millimeter-wave and THz bands [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/84004
TESIS
Bovkun, Leonid. "Etude de la structure de bande de puits quantiques à base de semi-conducteurs de faible bande interdite HgTe et InAs." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY060/document.
Full textMercury cadmium telluride (HgCdTe or MCT) is a time-honored material for condensed matter physics, whose history nowadays more than fifty years long may serve as an excellent example of remarkable progress made in research on semiconductors and semimetals. The ternary compound HgCdTe implies two important aspects, which largely contributed to its undoubted success in solid-states physics.The present PhD thesis primarily aims at filling some of existing gaps in our understanding of the electronic band structure in 2D and quasi-2D heterostructures based on HgTe/HgCdTe and InAs/InSb materials, which both may be tuned into topologically insulating phase using particular structural parameter. To explore their properties, the primal experimental technique, infrared and THz magneto-spectroscopy operating in a broad of magnetic fields, is combined with complementary magneto-transport measurements. This combination of experimental methods allows us to get valuable insights into electronic states not only at the Fermi energy, but also in relatively broad vicinity.The observed magneto-optical response - due to intraband (cyclotron resonance) and interband inter-Landau level excitations - may be interpreted in the context of previous studies performed on bulk samples , quantum wells and superlattices, but also compared with theoretical expectations. Here we aim at achieving the quantitative explanation of the collected experimental data, but also further developing a reliable theoretical model. The latter includes the fine-tuning of the band structure parameters present in the established Kane model, but even more importantly, identifying additional relevant (high-order) terms and finding their particular strengths, needed to achieve quantitative agreement with our experiments. One may expect that corrections due to these additional terms will more affect the valence subbands, which are in general characterized by relatively large effective masses. Consequently, valence subbands have larger density of states compared to conduction band or, when the magnetic field is applied, rather narrow spacing (and possibly large mixing) of Landau levels
Wang, Chao-Chun, and 王朝俊. "Narrow band gap Si-based material (Si1-xGex) processes, analyses and solarcell applications." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/29003002404262592025.
Full text明道大學
材料科學與工程學系碩士班
97
Abstract In this research, the hydrogenated amorphous silicon films (a-Si:H) and hydrogenated silicon germanium (a-SiGe:H) films were deposited using by High-frequency plasma enhanced chemical vapor deposition (HF-PECVD). For intrinsic Si layer research, pressure effect on the properties of Si films were investigated. The properties of intrinsic Si films such as deposition rate, crystalline fraction, absorption coefficient, band gap, dark conductivity, photo conductivity, hydrogen content and microstructure factor as function as deposition pressure. We investigated the pressure effects of growth mechanisms and properties on silicon films. High-quality both intrinsic and doped a-Si layers have been deposited in this paper. We report a narrow bandgap a-SiGe:H films with high photosensitivity using the mixture of SiH4 and GeH4 with H2 dilution. The effects of GeH4 / (SiH4 + GeH4 + H2) ratio on the properties of a-SiGe:H films are characterized by Raman spectrometer, X-ray photoelectron spectrometer, X-ray diffractometer spectrometer, Fourier transform infrared absorption spectroscopy, UV–Visible spectroscopy and scanning electron microscopy. We found that band gap decreases with increasing Ge content. We report the influence of Ge content on the properties of a-SiGe:H films and performance of p-i-n solar cells. The a-SiGe thin film solar cells with a Voc of 0.74 V, a Jsc of 9.9 mA/cm2 ,a fill factor of 0.60 and a maximum efficiency of 4.42 % were obtained.
Reifsnider, Jason Miles 1967. "Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxy." 2003. http://hdl.handle.net/2152/12359.
Full textBooks on the topic "Narrow band gap"
United States. National Aeronautics and Space Administration., ed. Further improvements in program to calculate electronic properties of narrow band gap materials: Final report. [Washington, DC: National Aeronautics and Space Administration, 1992.
Find full textPatterson, James D. Improvement of program to calculate electronic properties of narrow band gap materials. Melbourne, FL: Florida Institute of Technology, 1991.
Find full textT͡Sidilʹkovskiĭ, I. M. Electron spectrum of gapless semiconductors. Berlin: Springer, 1997.
Find full textJ, Kono, and Leotin J, eds. Narrow gap semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors, Toulouse, France, 3-7 July 2005. New York: Taylor & Francis, 2006.
Find full textNational Aeronautics and Space Administration (NASA) Staff. Improvement of Program to Calculate Electronic Properties of Narrow Band Gap Materials. Independently Published, 2018.
Find full textĖlektronnyĭ spektr besshchelevykh poluprovodnikov. Sverdlovsk: Akademii͡a nauk SSSR, Uralʹskoe otd-nie, 1991.
Find full text(Assistant), R. Dornhaus, G. Nimtz (Assistant), and B. Schlicht (Assistant), eds. Narrow-Gap Semiconductors (Springer Tracts in Modern Physics). Springer, 1985.
Find full textBasu, Prasanta Kumar, Bratati Mukhopadhyay, and Rikmantra Basu. Semiconductor Nanophotonics. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198784692.001.0001.
Full textKeoghane, Stephen, and Mark Sullivan. The principles of endourology. Edited by John Reynard. Oxford University Press, 2017. http://dx.doi.org/10.1093/med/9780199659579.003.0032.
Full textBook chapters on the topic "Narrow band gap"
"1. Optoelectronic properties of narrow band gap semiconductors." In Advances in Condensed Matter Optics, 1–50. De Gruyter, 2015. http://dx.doi.org/10.1515/9783110307023.1.
Full textSingleton, John. "Bandstructure engineering." In Band Theory and Electronic Properties of Solids, 65–84. Oxford University PressOxford, 2001. http://dx.doi.org/10.1093/oso/9780198506454.003.0007.
Full textKossut, J. "Chapter 5 Band Structure and Quantum Transport Phenomena in Narrow-Gap Diluted Magnetic Semiconductors." In Semiconductors and Semimetals, 183–227. Elsevier, 1988. http://dx.doi.org/10.1016/s0080-8784(08)62421-7.
Full textCostas, Andreea, Nicoleta Preda, Camelia Florica, and Ionut Enculescu. "Metal Oxide Nanowires as Building Blocks for Optoelectronic Devices." In Nanowires - Recent Progress [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94011.
Full textKumar, Umesh, Aparna Shekhar, Vaishali Arora, and Parul Singh. "Synthesis and Photocatalytic Applications of Silver Sulfide Nanostructures: Recent Advancement." In Smart Nanosystems - Advances in Research and Practice [Working Title]. IntechOpen, 2024. http://dx.doi.org/10.5772/intechopen.112783.
Full textP. Bhalekar, Vikram. "Quantum Dots Sensitized Solar Cell." In Quantum Dots - Recent Advances, New Perspectives and Contemporary Applications [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.107266.
Full textGinting, Dianta, and Jong-Soo Rhyee. "Optimizing Thermal Conductivity in PbTe: Nanocomposite and Alloy Approaches for Low Thermal Conductivity." In Current Research in Thermal Conductivity [Working Title]. IntechOpen, 2024. http://dx.doi.org/10.5772/intechopen.1006083.
Full textDutta, Amit Kumar. "Green Hydrogen, an Alternative Renewable Energy Source: Based on Solar-Energy-Driven Water-Splitting Technology." In Lincoln Publication, 134–48. Lincoln Publication, 2024. http://dx.doi.org/10.31674/book.2024ecc.12.
Full textMuhammad Khan, Waqas, and Wiqar Hussain Shah. "Thermoelectricity Properties of Tl10-x ATe6 (A = Pb) in Chalcogenide System." In Thermoelectricity - Recent Advances, New Perspectives and Applications. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.94487.
Full textGoody, R. M., and Y. L. Yung. "Band Models." In Atmospheric Radiation. Oxford University Press, 1989. http://dx.doi.org/10.1093/oso/9780195051346.003.0006.
Full textConference papers on the topic "Narrow band gap"
Zhang, Yuanrong, Prince Gupta, Deming Liu, Shuang Zheng, Max Yan, and Minming Zhang. "Power-efficient Metasurface Thermal Emitter for Mid-IR Gas Sensing Application." In CLEO: Applications and Technology, JTh2A.50. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jth2a.50.
Full textMalkova, Natalia, Garnett W. Bryant, Giti A. Khodaparast, Michael B. Santos, and Christopher J. Stanton. "Negative-Band-Gap Quantum Dots." In 15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15). AIP, 2011. http://dx.doi.org/10.1063/1.3671699.
Full textHayase, Shuzi. "Perovskite solar cells with wide band gap and narrow band gap." In 4th Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.iperop.2020.009.
Full textLhuillier, Emmanuel, Bertille Martinez, Clement livache, and nicolas goubet. "Dynamics in Narrow Band Gap Nanocrystals." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.fallmeeting.2018.138.
Full textLhuillier, Emmanuel, Bertille Martinez, Clement livache, and nicolas goubet. "Dynamics in Narrow Band Gap Nanocrystals." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.nfm.2018.138.
Full textWilke, Ingrid. "Terahertz emission from narrow band gap semiconductors." In Optics East 2007, edited by Mehdi Anwar, Anthony J. DeMaria, and Michael S. Shur. SPIE, 2007. http://dx.doi.org/10.1117/12.735101.
Full textlhuillier, Emmanuel, Adrien Robin, Clement Livache, Bertille Martinez, and Nicolas goubet. "Intraband transition in narrow band gap nanocrystals." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.fallmeeting.2018.164.
Full textlhuillier, Emmanuel, Adrien Robin, Clement Livache, Bertille Martinez, and Nicolas goubet. "Intraband transition in narrow band gap nanocrystals." In nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.nfm.2018.164.
Full textTkacheva, E. S., A. V. Dmitriev, Giti A. Khodaparast, Michael B. Santos, and Christopher J. Stanton. "Calculation of PbTe Transport Coefficients in Three-Band Structures." In 15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15). AIP, 2011. http://dx.doi.org/10.1063/1.3671714.
Full textKhoshakhlagh, A., L. Hoglund D. Z. Ting, A. Soibel, and S. D. Gunapala. "Optical Characteristics of Narrow Band Gap InAs/InAsSb Superlattices." In 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM). IEEE, 2018. http://dx.doi.org/10.1109/phosst.2018.8456719.
Full textReports on the topic "Narrow band gap"
Bedair, Salah M., John R. Hauser, Nadia Elmasry, Peter C. Colter, G. Bradshaw, C. Z. Carlin, J. Samberg, and Kenneth Edmonson. Tunable Narrow Band Gap Absorbers For Ultra High Efficiency Solar Cells. Office of Scientific and Technical Information (OSTI), July 2012. http://dx.doi.org/10.2172/1146980.
Full textBeck, Steven, Mara Claire Tayag, Kijin Kim, Ma Concepcion Latoja, Ankita Pandey, and Alexander Malaket. 2023 Trade Finance Gaps, Growth, and Jobs Survey. Asian Development Bank, September 2023. http://dx.doi.org/10.22617/brf230334-2.
Full textCollett, Clementine, Gina Neff, and Livia Gouvea. The Effects of AI on the Working Lives of Women. Inter-American Development Bank, March 2022. http://dx.doi.org/10.18235/0004055.
Full textVanZomeren, Christine, Kevin Philley, Nia Hurst, and Jacob Berkowitz. Wildrice (Zizania palustris; Manoomin) biology, functions and values, and soil physiochemical properties affecting production : a review of available literature. Engineer Research and Development Center (U.S.), August 2023. http://dx.doi.org/10.21079/11681/47513.
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