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Journal articles on the topic 'NANOWIRE RECONFIGURABLE'

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Author: Grafiati

Published: 11 September 2023

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1

Heinzig, André, Stefan Slesazeck, Franz Kreupl, Thomas Mikolajick, and Walter M. Weber. "Reconfigurable Silicon Nanowire Transistors." Nano Letters 12, no. 1 (December 2011): 119–24. http://dx.doi.org/10.1021/nl203094h.

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2

Weber, W. M., A. Heinzig, J. Trommer, D. Martin, M. Grube, and T. Mikolajick. "Reconfigurable nanowire electronics – A review." Solid-State Electronics 102 (December 2014): 12–24. http://dx.doi.org/10.1016/j.sse.2014.06.010.

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3

Baldauf, Tim, Andre Heinzig, Thomas Mikolajick, and Walter M. Weber. "Vertically Integrated Reconfigurable Nanowire Arrays." IEEE Electron Device Letters 39, no. 8 (August 2018): 1242–45. http://dx.doi.org/10.1109/led.2018.2847902.

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4

Park, So Jeong, Dae-Young Jeon, Sabrina Piontek, Matthias Grube, Johannes Ocker, Violetta Sessi, André Heinzig, et al. "Reconfigurable Si Nanowire Nonvolatile Transistors." Advanced Electronic Materials 4, no. 1 (December 11, 2017): 1700399. http://dx.doi.org/10.1002/aelm.201700399.

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5

Trommer, Jens, André Heinzig, Anett Heinrich, Paul Jordan, Matthias Grube, Stefan Slesazeck, Thomas Mikolajick, and Walter M. Weber. "Material Prospects of Reconfigurable Transistor (RFETs) – From Silicon to Germanium Nanowires." MRS Proceedings 1659 (2014): 225–30. http://dx.doi.org/10.1557/opl.2014.110.

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ABSTRACTReconfigurable nanowire transistors provide the operation of unipolar p-type and n-type FETs freely selectable within a single device. The enhanced functionality is enabled by controlling the currents through two individually gated Schottky junctions. Here we analyze the impact of the Schottky barrier height on the symmetry of Silicon nanowire RFET transfer characteristics and their performance within circuits. Prospective simulations are carried out, indicating that germanium nanowire based RFETs of the same dimensions will show a distinctly increased performance, making them a promising material solution for future reconfigurable electronics.

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6

Hashim, Uda, Tijjani Adam, M. N. Afnan Uda, and M. N. A. Uda. "Determination of Silicon Electrical Properties Using First Principles Approach." Journal of Physics: Conference Series 2129, no. 1 (December 1, 2021): 012056. http://dx.doi.org/10.1088/1742-6596/2129/1/012056.

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Abstract Silicon nanowires have attracted attention as basis for reconfigurable electronics. However, as the size decreases, the electronic properties of the nanowires vary as a result of confinement, strain and crystal topology effects. Thus, at the thin diameter regime the band gap of Silicon nanowires can no longer be derived from a simple extrapolation of the isotropic bulk behaviour. This study compares band gap parameters in sub 10nm nanowires obtained from first-principles density-functional band structure calculations with extrapolations using continuum theory in order to rationalize the changes of the overall conductance, resistance and band gap. The device consists of silicon nanowire of size between 1 nm to 6nm. The results indicate an increase of, both the energy gap and the resistance along with reduced conductivity for the thinnest wires and a dependence on the crystal orientation with gaps reaching up to 4.3 eV along <111>, 4.0 eV along <110>, and 3.7 along <100>.

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7

Li, Xianglong, Xiaoqiao Yang, Zhe Zhang, Teng Wang, Yabin Sun, Ziyu Liu, Xiaojin Li, Yanling Shi, and Jun Xu. "Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor." IEEE Transactions on Electron Devices 68, no. 2 (February 2021): 885–91. http://dx.doi.org/10.1109/ted.2020.3045689.

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8

Weber, Walter M., Andre Heinzig, Jens Trommer, Matthias Grube, Franz Kreupl, and Thomas Mikolajick. "Reconfigurable Nanowire Electronics-Enabling a Single CMOS Circuit Technology." IEEE Transactions on Nanotechnology 13, no. 6 (November 2014): 1020–28. http://dx.doi.org/10.1109/tnano.2014.2362112.

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9

Betz, A. C., M. L. V. Tagliaferri, M. Vinet, M. Broström, M. Sanquer, A. J. Ferguson, and M. F. Gonzalez-Zalba. "Reconfigurable quadruple quantum dots in a silicon nanowire transistor." Applied Physics Letters 108, no. 20 (May 16, 2016): 203108. http://dx.doi.org/10.1063/1.4950976.

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10

Trommer, Jens, Andre Heinzig, Stefan Slesazeck, Thomas Mikolajick, and Walter Michael Weber. "Elementary Aspects for Circuit Implementation of Reconfigurable Nanowire Transistors." IEEE Electron Device Letters 35, no. 1 (January 2014): 141–43. http://dx.doi.org/10.1109/led.2013.2290555.

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11

Baldauf, Tim, Andre Heinzig, Jens Trommer, Thomas Mikolajick, and Walter Michael Weber. "Stress-Dependent Performance Optimization of Reconfigurable Silicon Nanowire Transistors." IEEE Electron Device Letters 36, no. 10 (October 2015): 991–93. http://dx.doi.org/10.1109/led.2015.2471103.

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12

Boehm, Sarah J., Lei Kang, Douglas H. Werner, and Christine D. Keating. "Field-Switchable Broadband Polarizer Based on Reconfigurable Nanowire Assemblies." Advanced Functional Materials 27, no. 5 (December 19, 2016): 1604703. http://dx.doi.org/10.1002/adfm.201604703.

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13

Sun, Bin, Benjamin Richstein, Patrick Liebisch, Thorben Frahm, Stefan Scholz, Jens Trommer, Thomas Mikolajick, and Joachim Knoch. "On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors." IEEE Transactions on Electron Devices 68, no. 7 (July 2021): 3684–89. http://dx.doi.org/10.1109/ted.2021.3081527.

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14

Wessely, Frank, Tillmann Krauss, and Udo Schwalke. "Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs." Microelectronics Journal 44, no. 12 (December 2013): 1072–76. http://dx.doi.org/10.1016/j.mejo.2012.08.004.

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15

Saha, Priyanka, Dinesh Kumar Dash, and Subir Kumar Sarkar. "Nanowire reconfigurable FET as biosensor: Based on dielectric modulation approach." Solid-State Electronics 161 (November 2019): 107637. http://dx.doi.org/10.1016/j.sse.2019.107637.

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16

Banerjee, Sayanti, Markus Löffler, Uwe Muehle, Katarzyna Berent, André Heinzig, Jens Trommer, Walter Weber, and Ehrenfried Zschech. "TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices." Advanced Engineering Materials 18, no. 2 (March 25, 2015): 180–84. http://dx.doi.org/10.1002/adem.201400577.

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17

Simon, Maik, Andre Heinzig, Jens Trommer, Tim Baldauf, Thomas Mikolajick, and Walter M. Weber. "Top-Down Technology for Reconfigurable Nanowire FETs With Symmetric On-Currents." IEEE Transactions on Nanotechnology 16, no. 5 (September 2017): 812–19. http://dx.doi.org/10.1109/tnano.2017.2694969.

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18

Wu, Jun, and Minsu Choi. "Latency/area analysis and optimization of asynchronous nanowire reconfigurable crossbar system." Nano Communication Networks 1, no. 4 (December 2010): 301–9. http://dx.doi.org/10.1016/j.nancom.2011.01.003.

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19

Trommer, Jens, Andre Heinzig, Tim Baldauf, Stefan Slesazeck, Thomas Mikolajick, and Walter M. Weber. "Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors." IEEE Transactions on Nanotechnology 14, no. 4 (July 2015): 689–98. http://dx.doi.org/10.1109/tnano.2015.2429893.

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20

Shiratori, Yuta, Kensuke Miura, Rui Jia, Nan-Jian Wu, and Seiya Kasai. "Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network." Applied Physics Express 3, no. 2 (January 29, 2010): 025002. http://dx.doi.org/10.1143/apex.3.025002.

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21

Yellambalase, Yadunandana, and Minsu Choi. "Cost-driven repair optimization of reconfigurable nanowire crossbar systems with clustered defects." Journal of Systems Architecture 54, no. 8 (August 2008): 729–41. http://dx.doi.org/10.1016/j.sysarc.2008.01.001.

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22

Duan, Jingyu, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle M. L. Lam, Alberto Ronzani, Andrey Shchepetov, et al. "Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire." Applied Physics Letters 118, no. 16 (April 19, 2021): 164002. http://dx.doi.org/10.1063/5.0040259.

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23

Darbandy, Ghader, Martin Claus, and Michael Schroter. "High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design." IEEE Transactions on Nanotechnology 15, no. 2 (March 2016): 289–94. http://dx.doi.org/10.1109/tnano.2016.2521897.

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24

Singh, Sangeeta, Ruchir Sinha, and P. N. Kondekar. "A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET." Superlattices and Microstructures 93 (May 2016): 40–49. http://dx.doi.org/10.1016/j.spmi.2016.02.039.

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25

Biswas, Ayan K., Jayasimha Atulasimha, and Supriyo Bandyopadhyay. "Energy-Efficient Hybrid Spintronic–Straintronic Nonvolatile Reconfigurable Equality Bit Comparator." SPIN 07, no. 02 (May 23, 2017): 1750004. http://dx.doi.org/10.1142/s2010324717500047.

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We propose and analyze a “spintronic/straintronic” reconfigurable equality bit comparator implemented with a nanowire spin valve whose two contacts are two-phase multiferroic nanomagnets and possess bistable magnetization. A reference bit is “written” into a stable magnetization state of one contact and an input bit in that of the other with electrically generated strain. The spin-valve’s resistance is lowered (raised) if the bits match (do not match). Multiple comparators can be interfaced in parallel with a magneto-tunneling junction to determine if an [Formula: see text]-bit input stream matches an [Formula: see text]-bit reference stream bit by bit. The system is robust against thermal noise at room temperature and a 16-bit comparator can operate at [Formula: see text][Formula: see text]MHz while dissipating [Formula: see text][Formula: see text]28[Formula: see text]fJ per cycle. This implementation is more energy-efficient than CMOS-based implementations and the reference bits can be stored in the comparator itself without the need for refresh cycles or the need to fetch them from a remote memory for comparison. That improves reliability, speed and security.

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26

Baldauf, Tim, André Heinzig, Jens Trommer, Thomas Mikolajick, and Walter Michael Weber. "Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors." Solid-State Electronics 128 (February 2017): 148–54. http://dx.doi.org/10.1016/j.sse.2016.10.009.

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27

Mikolajick, T., A. Heinzig, J. Trommer, T. Baldauf, and W. M. Weber. "The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems." Semiconductor Science and Technology 32, no. 4 (March 1, 2017): 043001. http://dx.doi.org/10.1088/1361-6641/aa5581.

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28

Hongal, Veeresh, Raghavendra Kotikalapudi, and Minsu Choi. "Design, Test, and Repair of MLUT (Memristor Look-Up Table) Based Asynchronous Nanowire Reconfigurable Crossbar Architecture." IEEE Journal on Emerging and Selected Topics in Circuits and Systems 4, no. 4 (December 2014): 427–37. http://dx.doi.org/10.1109/jetcas.2014.2361067.

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29

Shiratori, Yuta, Kensuke Miura, and Seiya Kasai. "Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits." Microelectronic Engineering 88, no. 8 (August 2011): 2755–58. http://dx.doi.org/10.1016/j.mee.2010.12.007.

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30

Yu, Zhiqiang, Qing Shi, Huaping Wang, Junyi Shang, Qiang Huang, and Toshio Fukuda. "Controllable Melting and Flow of Ag in Self-Formed Amorphous Carbonaceous Shell for Nanointerconnection." Micromachines 13, no. 2 (January 29, 2022): 213. http://dx.doi.org/10.3390/mi13020213.

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Nanointerconnection has been selected as a promising method in the post-Moore era to realize device miniaturization and integration. Even with many advances, the existing nanojoining methods still need further developments to meet the three-dimensional nanostructure construction requirements of the next-generation devices. Here, we proposed an efficient silver (Ag)-filled nanotube fabrication method and realized the controllable melting and ultrafine flow of the encapsulated silver at a subfemtogram (0.83 fg/s) level, which presents broad application prospects in the interconnection of materials in the nanometer or even subnanometer. We coated Ag nanowire with polyvinylpyrrolidone (PVP) to obtain core–shell nanostructures instead of the conventional well-established nanotube filling or direct synthesis technique, thus overcoming obstacles such as low filling rate, discontinuous metalcore, and limited filling length. Electromigration and thermal gradient force were figured out as the dominant forces for the controllable flow of molten silver. The conductive amorphous carbonaceous shell formed by pyrolyzing the insulative PVP layer was also verified by energy dispersive spectroscopy (EDS), which enabled the continued outflow of the internal Ag. Finally, a reconfigurable nanointerconnection experiment was implemented, which opens the way for interconnection error correction in the fabrication of nanoelectronic devices.

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31

Singh, Sangeeta, P. N. Kondekar, and Ruchir Sinha. "Estimation of Analog/Radio-Frequency Figures-of-Merits and Circuit Performance of Dynamically Reconfigurable Electrostatically Doped Silicon Nanowire Schottky Barrier FET." Journal of Nanoelectronics and Optoelectronics 12, no. 4 (April 1, 2017): 343–51. http://dx.doi.org/10.1166/jno.2017.2013.

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32

Zou, Qiushun, Wenjie Liu, Yang Shen, and Chongjun Jin. "Flexible plasmonic modulators induced by the thermomechanical effect." Nanoscale 11, no. 24 (2019): 11437–44. http://dx.doi.org/10.1039/c9nr04068d.

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In a reconfigurable flexible plasmonic modulator, the gap between the gold nanowires is widen by local expansion of PDMS substrate caused by current-induced local Joule heat, leading to a strength change of plasmon resonance.

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33

Schonbrun, Ethan, Kwanyong Seo, and Kenneth B. Crozier. "Reconfigurable Imaging Systems Using Elliptical Nanowires." Nano Letters 11, no. 10 (October 12, 2011): 4299–303. http://dx.doi.org/10.1021/nl202324s.

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34

Zhang, Douguo, Ruxue Wang, Yifeng Xiang, Yan Kuai, Cuifang Kuang, Ramachandram Badugu, Yingke Xu, et al. "Silver Nanowires for Reconfigurable Bloch Surface Waves." ACS Nano 11, no. 10 (September 20, 2017): 10446–51. http://dx.doi.org/10.1021/acsnano.7b05638.

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35

Begari, Krishna, and Arabinda Haldar. "Reconfigurable microwave properties of zigzag magnetic nanowires." Journal of Physics D: Applied Physics 53, no. 45 (August 18, 2020): 455005. http://dx.doi.org/10.1088/1361-6463/aba571.

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36

Liang, Zexi, and Donglei Fan. "Visible light–gated reconfigurable rotary actuation of electric nanomotors." Science Advances 4, no. 9 (September 2018): eaau0981. http://dx.doi.org/10.1126/sciadv.aau0981.

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Highly efficient and widely applicable working mechanisms that allow nanomaterials and devices to respond to external stimuli with controlled mechanical motions could make far-reaching impact to reconfigurable, adaptive, and robotic nanodevices. We report an innovative mechanism that allows multifold reconfiguration of mechanical rotation of semiconductor nanoentities in electric (E) fields by visible light stimulation. When illuminated by light in the visible-to-infrared regime, the rotation speed of semiconductor Si nanowires in E-fields can instantly increase, decrease, and even reverse the orientation, depending on the intensity of the applied light and the AC E-field frequency. This multifold rotational reconfiguration is highly efficient, instant, and facile. Switching between different modes can be simply controlled by the light intensity at an AC frequency. We carry out experiments, theoretical analysis, and simulations to understand the underlying principle, which can be attributed to the optically tunable polarization of Si nanowires in an aqueous suspension and an external E-field. Finally, leveraging this newly discovered effect, we successfully differentiate semiconductor and metallic nanoentities in a noncontact and nondestructive manner. This research could inspire a new class of reconfigurable nanoelectromechanical and nanorobotic devices for optical sensing, communication, molecule release, detection, nanoparticle separation, and microfluidic automation.

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37

Guo, Jie, Yong Zhou, Huajun Yuan, Ding Zhao, Yanling Yin, Kuo Hai, Yuehua Peng, Weichang Zhou, and Dongsheng Tang. "Reconfigurable resistive switching devices based on individual tungsten trioxide nanowires." AIP Advances 3, no. 4 (April 2013): 042137. http://dx.doi.org/10.1063/1.4804067.

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38

Iftimie, S., A. Radu, and D. Dragoman. "Reconfigurable logic gates in nanowires with Rashba spin-orbit interaction." Physica E: Low-dimensional Systems and Nanostructures 120 (June 2020): 114064. http://dx.doi.org/10.1016/j.physe.2020.114064.

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39

Khan, Muhammad Bilal, Dipjyoti Deb, Jochen Kerbusch, Florian Fuchs, Markus Löffler, Sayanti Banerjee, Uwe Mühle, et al. "Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires." Applied Sciences 9, no. 17 (August 22, 2019): 3462. http://dx.doi.org/10.3390/app9173462.

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We present results of our investigations on nickel silicidation of top-down fabricated silicon nanowires (SiNWs). Control over the silicidation process is important for the application of SiNWs in reconfigurable field-effect transistors. Silicidation is performed using a rapid thermal annealing process on the SiNWs fabricated by electron beam lithography and inductively-coupled plasma etching. The effects of variations in crystallographic orientations of SiNWs and different NW designs on the silicidation process are studied. Scanning electron microscopy and transmission electron microscopy are performed to study Ni diffusion, silicide phases, and silicide–silicon interfaces. Control over the silicide phase is achieved together with atomically sharp silicide–silicon interfaces. We find that {111} interfaces are predominantly formed, which are energetically most favorable according to density functional theory calculations. However, control over the silicide length remains a challenge.

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40

Patra, Partha Pratim, Rohit Chikkaraddy, Sreeja Thampi, Ravi P. N. Tripathi, and G. V. Pavan Kumar. "Large-scale dynamic assembly of metal nanostructures in plasmofluidic field." Faraday Discussions 186 (2016): 95–106. http://dx.doi.org/10.1039/c5fd00127g.

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We discuss two aspects of the plasmofluidic assembly of plasmonic nanostructures at the metal–fluid interface. First, we experimentally show how three and four spot evanescent-wave excitation can lead to unconventional assembly of plasmonic nanoparticles at the metal–fluid interface. We observed that the pattern of assembly was mainly governed by the plasmon interference pattern at the metal–fluid interface, and further led to interesting dynamic effects within the assembly. The interference patterns were corroborated by 3D finite-difference time-domain simulations. Secondly, we show how anisotropic geometry, such as Ag nanowires, can be assembled and aligned in unstructured and structured plasmofluidic fields. We found that by structuring the metal-film, Ag nanowires can be aligned at the metal–fluid interface with a single evanescent-wave excitation, thus highlighting the prospect of assembling plasmonic circuits in a fluid. An interesting aspect of our method is that we obtain the assembly at locations away from the excitation points, thus leading to remote assembly of nanostructures. The results discussed herein may have implications in realizing a platform for reconfigurable plasmonic metamaterials, and a test-bed to understand the effect of plasmon interference on assembly of nanostructures in fluids.

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41

Jeon, Dae-Young, So Jeong Park, Sebastian Pregl, Thomas Mikolajick, and Walter M. Weber. "Reconfigurable thin-film transistors based on a parallel array of Si-nanowires." Journal of Applied Physics 129, no. 12 (March 28, 2021): 124504. http://dx.doi.org/10.1063/5.0036029.

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42

Boehm, Sarah J., Lan Lin, Nermina Brljak, Nicole R. Famularo, Theresa S. Mayer, and Christine D. Keating. "Reconfigurable Positioning of Vertically-Oriented Nanowires Around Topographical Features in an AC Electric Field." Langmuir 33, no. 41 (October 3, 2017): 10898–906. http://dx.doi.org/10.1021/acs.langmuir.7b02163.

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43

"Reconfigurable Nanowire Electronics." ECS Meeting Abstracts, 2011. http://dx.doi.org/10.1149/ma2011-01/18/1191.

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44

Lee, Hoo-Cheol, Jungkil Kim, Ha-Reem Kim, Kyoung-Ho Kim, Kyung-Jun Park, Jae-Pil So, Jung Min Lee, Min-Soo Hwang, and Hong-Gyu Park. "Nanograin network memory with reconfigurable percolation paths for synaptic interactions." Light: Science & Applications 12, no. 1 (May 15, 2023). http://dx.doi.org/10.1038/s41377-023-01168-5.

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AbstractThe development of memory devices with functions that simultaneously process and store data is required for efficient computation. To achieve this, artificial synaptic devices have been proposed because they can construct hybrid networks with biological neurons and perform neuromorphic computation. However, irreversible aging of these electrical devices causes unavoidable performance degradation. Although several photonic approaches to controlling currents have been suggested, suppression of current levels and switching of analog conductance in a simple photonic manner remain challenging. Here, we demonstrated a nanograin network memory using reconfigurable percolation paths in a single Si nanowire with solid core/porous shell and pure solid core segments. The electrical and photonic control of current percolation paths enabled the analog and reversible adjustment of the persistent current level, exhibiting memory behavior and current suppression in this single nanowire device. In addition, the synaptic behaviors of memory and erasure were demonstrated through potentiation and habituation processes. Photonic habituation was achieved using laser illumination on the porous nanowire shell, with a linear decrease in the postsynaptic current. Furthermore, synaptic elimination was emulated using two adjacent devices interconnected on a single nanowire. Therefore, electrical and photonic reconfiguration of the conductive paths in Si nanograin networks will pave the way for next-generation nanodevice technologies.

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45

Gartside, Jack C., Son G. Jung, Seung Y. Yoo, Daan M. Arroo, Alex Vanstone, Troy Dion, Kilian D. Stenning, and Will R. Branford. "Current-controlled nanomagnetic writing for reconfigurable magnonic crystals." Communications Physics 3, no. 1 (November 30, 2020). http://dx.doi.org/10.1038/s42005-020-00487-y.

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AbstractStrongly-interacting nanomagnetic arrays are crucial across an ever-growing suite of technologies. Spanning neuromorphic computing, control over superconducting vortices and reconfigurable magnonics, the utility and appeal of these arrays lies in their vast range of distinct, stable magnetization states. Different states exhibit different functional behaviours, making precise, reconfigurable state control an essential cornerstone of such systems. However, few existing methodologies may reverse an arbitrary array element, and even fewer may do so under electrical control, vital for device integration. We demonstrate selective, reconfigurable magnetic reversal of ferromagnetic nanoislands via current-driven motion of a transverse domain wall in an adjacent nanowire. The reversal technique operates under all-electrical control with no reliance on external magnetic fields, rendering it highly suitable for device integration across a host of magnonic, spintronic and neuromorphic logic architectures. Here, the reversal technique is leveraged to realize two fully solid-state reconfigurable magnonic crystals, offering magnonic gating, filtering, transistor-like switching and peak-shifting without reliance on global magnetic fields.

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46

Kim, Taekham, Doohyeok Lim, Jaemin Son, Kyoungah Cho, and Sangsig Kim. "Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping." Nanotechnology, July 1, 2022. http://dx.doi.org/10.1088/1361-6528/ac7dae.

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Abstract In this study, we perform reconfigurable n- and p-channel operations of a tri-top-gate field-effect transistor (FET) made of a p+-i-n+ silicon nanowire (SiNW). In the reconfigurable FET (RFET), two polarity gates and one control gate induce virtual electrostatic doping in the SiNW channel. The polarity gates are electrically connected to each other and program the channel type, while the control gate modulates the flow of charge carriers in the SiNW channel. The SiNW RFET features simple device design, symmetric electrical characteristics in the n- and p-channel operation modes using p-n diode characteristics, and both operation modes exhibit high ON/OFF ratios (~106) and high ON currents (~1 µA/µm). The proposed devices are demonstrated experimentally using a fully CMOS-compatible top-down processes.

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47

Zhu, Zhongyunshen, Anton E. O. Persson, and Lars-Erik Wernersson. "Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor." Nature Communications 14, no. 1 (May 3, 2023). http://dx.doi.org/10.1038/s41467-023-38242-w.

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AbstractReconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits.

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48

Quijada, Jorge Navarro, Tim Baldauf, Shubham Rai, Andre Heinzig, Akash Kumar, Walter M. Weber, Thomas Mikolajick, and Jens Trommer. "A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation." IEEE Transactions on Nanotechnology, 2022, 1–8. http://dx.doi.org/10.1109/tnano.2022.3221836.

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Liang, Zexi, Daniel Teal, and Donglei (Emma) Fan. "Light programmable micro/nanomotors with optically tunable in-phase electric polarization." Nature Communications 10, no. 1 (November 21, 2019). http://dx.doi.org/10.1038/s41467-019-13255-6.

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Abstract:

AbstractTo develop active nanomaterials that can instantly respond to external stimuli with designed mechanical motions is an important step towards the realization of nanorobots. Herein, we present our finding of a versatile working mechanism that allows instantaneous change of alignment direction and speed of semiconductor nanowires in an external electric field with simple visible-light exposure. The light induced alignment switch can be cycled over hundreds of times and programmed to express words in Morse code. With theoretical analysis and simulation, the working principle can be attributed to the optically tuned real-part (in-phase) electrical polarization of a semiconductor nanowire in aqueous suspension. The manipulation principle is exploited to create a new type of microscale stepper motor that can readily switch between in-phase and out-phase modes, and agilely operate independent of neighboring motors with patterned light. This work could inspire the development of new types of micro/nanomachines with individual and reconfigurable maneuverability for many applications.

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"(Invited) High-Yield Reconfigurable Silicon and Germanium Nanowire Transistors and Compact Logic Circuits." ECS Meeting Abstracts, 2016. http://dx.doi.org/10.1149/ma2016-02/37/2315.

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