Relevant bibliographies by topics / Nanostructured Semiconductors Crystals

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Nanostructured Semiconductors Crystals'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "Nanostructured Semiconductors Crystals"

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Kosach, N. I., V. B. Bolshakov, I. T. Bohdanov, and Y. O. Suchikova. "Statistical evaluation of morphological parameters of porous nanostructures on the synthesized indium phosphide surface." Bulletin of the Karaganda University. "Physics" Series 103, no. 3 (September 30, 2021): 83–92. http://dx.doi.org/10.31489/2021ph3/83-92.

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A constructive method for estimating the surface morphology of nanostructured semiconductors, which consists in determining the main statistical characteristics of the aggregate structure of nanoscale objects on their synthesized surface is presented. In terms of the indium phosphide semiconductor with a synthesized porous layer on its surface, it is shown that the evaluation of the main statistical characteristics allows a deeper understanding of the kinetics of the pore formation process during typical electrochemical treatment of the crystal. The determination of the main statistical metrologically based characteristics (indicators of the distribution center, variation, and shape of the distribution) allows us to understand in more detail view the processes occurring during electrochemical processing of crystals. In the long run, this will make it possible to create nanostructures with predetermined properties, which will become the basis for the industrial production of high-quality nanostructured semiconductors.
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Li, Jing, Wenhua Bi, Wooseok Ki, Xiaoying Huang, and Srihari Reddy. "Nanostructured Crystals: Unique Hybrid Semiconductors Exhibiting Nearly Zero and Tunable Uniaxial Thermal Expansion Behavior." Journal of the American Chemical Society 129, no. 46 (November 2007): 14140–41. http://dx.doi.org/10.1021/ja075901n.

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Chen, Jihua. "Advanced Electron Microscopy of Nanophased Synthetic Polymers and Soft Complexes for Energy and Medicine Applications." Nanomaterials 11, no. 9 (September 15, 2021): 2405. http://dx.doi.org/10.3390/nano11092405.

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After decades of developments, electron microscopy has become a powerful and irreplaceable tool in understanding the ionic, electrical, mechanical, chemical, and other functional performances of next-generation polymers and soft complexes. The recent progress in electron microscopy of nanostructured polymers and soft assemblies is important for applications in many different fields, including, but not limited to, mesoporous and nanoporous materials, absorbents, membranes, solid electrolytes, battery electrodes, ion- and electron-transporting materials, organic semiconductors, soft robotics, optoelectronic devices, biomass, soft magnetic materials, and pharmaceutical drug design. For synthetic polymers and soft complexes, there are four main characteristics that differentiate them from their inorganic or biomacromolecular counterparts in electron microscopy studies: (1) lower contrast, (2) abundance of light elements, (3) polydispersity or nanomorphological variations, and (4) large changes induced by electron beams. Since 2011, the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory has been working with numerous facility users on nanostructured polymer composites, block copolymers, polymer brushes, conjugated molecules, organic–inorganic hybrid nanomaterials, organic–inorganic interfaces, organic crystals, and other soft complexes. This review crystalizes some of the essential challenges, successes, failures, and techniques during the process in the past ten years. It also presents some outlooks and future expectations on the basis of these works at the intersection of electron microscopy, soft matter, and artificial intelligence. Machine learning is expected to automate and facilitate image processing and information extraction of polymer and soft hybrid nanostructures in aspects such as dose-controlled imaging and structure analysis.
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Wang, Z. L. "Energy-filtered high-resolution Electron Microscopy of nanostructured materials." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 176–77. http://dx.doi.org/10.1017/s0424820100137252.

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The interaction between an incident electron and the atoms in condensed matter results in various inelastic scattering processes. Thermal diffuse scattering or phonon scattering is the result of atomic vibrations in crystals. This process does not introduce any significant energy-loss (< 0.1 eV) but produces large momentum transfer. Valence-loss (or plasmon for metals and semiconductors) excitation, which characterizes the transitions of electrons from the valence band to the conduction band, involves an energyloss in the range of 1 -50 e V. Atomic inner-shell ionization is excited by the energy transfer of the incident electron, resulting in an ejected electron from the deep-core states. Continuous energy-loss spectra can also be generated by an electron which penetrates into the specimen and undergoes collisions with the atoms in it, resulting in Bremsstrahlung and leading to emission of x-rays with continuous energy. The electron Compton scattering refers to the collision of the incident electron with an electron belonging to the specimen. In an electron energy-loss spectrum (EELS), the zero-loss peak is composed of elastically and thermal diffusely scattered electrons. The low-loss region is dominated by valence-excitations.
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Shen, Shaohua, and Samuel S. Mao. "Nanostructure designs for effective solar-to-hydrogen conversion." Nanophotonics 1, no. 1 (July 1, 2012): 31–50. http://dx.doi.org/10.1515/nanoph-2012-0010.

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AbstractConversion of energy from photons in sunlight to hydrogen through solar splitting of water is an important technology. The rising significance of producing hydrogen from solar light via water splitting has motivated a surge of developing semiconductor solar-active nanostructures as photocatalysts and photoelectrodes. Traditional strategies have been developed to enhance solar light absorption (e.g., ion doping, solid solution, narrow-band-gap semiconductor or dye sensitization) and improve charge separation/transport to prompt surface reaction kinetics (e.g., semiconductor combination, co-catalyst loading, nanostructure design) for better utilizing solar energy. However, the solar-to-hydrogen efficiency is still limited. This article provides an overview of recently demonstrated novel concepts of nanostructure designs for efficient solar hydrogen conversion, which include surface engineering, novel nanostructured heterojunctions, and photonic crystals. Those first results outlined in the main text encouragingly point out the prominence and promise of these new concepts principled for designing high-efficiency electronic and photonic nanostructures that could serve for sustainable solar hydrogen production.
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Rud, Vasily, Doulbay Melebaev, Viktor Krasnoshchekov, Ilya Ilyin, Eugeny Terukov, Maksim Diuldin, Alexey Andreev, Maral Shamuhammedowa, and Vadim Davydov. "Photosensitivity of Nanostructured Schottky Barriers Based on GaP for Solar Energy Applications." Energies 16, no. 5 (February 28, 2023): 2319. http://dx.doi.org/10.3390/en16052319.

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This work investigates the surface-barrier photoelectric properties of Au-palladium-n-GaP structures. Research into the visible spectrum region, under the action of both linearly polarized and natural radiation, provides us with new information about the height of the barrier, the interface m-s section, and the GaP band structure. SBs based on GaP (p- and n-type) are helpful for researchers in developing advantageous structures for creating various photovoltaic devices—photodetectors for fiber-optic control of energy systems or possible structures for solar energy. Despite many years of research, issues concerning the band structure of semiconductors based on the phenomenon of photoelectroactive absorption in such surface-barrier structures’ m-s remain urgent in the creation of new high-performance devices. Such structures may also be interesting for creating solar energy systems. They create a thin insulating dielectric layer (usually an oxide layer) in solar cells on SBs between the m and the semiconductor substrate. The advantage of solar cells based on m dielectric semiconductor structures is the strong electric field near the surface of the semiconductor that usually has a direction favoring the collection of carriers created by short-wavelength light. Diffusion of impurities usually results in crystal defects in the active region. There are no such defects in the studied elements. This is also the difference between solar cells on m dielectric structures and elements with diffusion in p-n junctions. We studied the PS of Au-Pd-n-GaP nanostructures to determine the height of the potential barrier qφBo and obtained accurate data on the zone structure of the n-GaP. The PS of nanostructured Au-Pd-n-GaP structures was studied in the visible region of the spectrum. Essential information about the semiconductor’s potential barrier parameters and band structure was obtained. The intermediate Pd nanolayer between Au and GaP has specific effects on the Au-Pd-n-GaP nanostructure, which are of considerable practical and scientific significance for future needs.
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Al-Ahmed, Amir, Bello Mukhtar, Safdar Hossain, S. M. Javaid Zaidi, and S. U. Rahman. "Application of Titanium Dioxide (TiO2) Based Photocatalytic Nanomaterials in Solar and Hydrogen Energy: A Short Review." Materials Science Forum 712 (February 2012): 25–47. http://dx.doi.org/10.4028/www.scientific.net/msf.712.25.

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Tremendous amount of research work is going on Titanium dioxide (TiO2) based materials. These materials have many useful applications in our scientific and daily life and it ranges from photovoltaics to photocatalysis to photo-electrochromics, sensors etc.. All these applications can be divided into two broad categories such as environmental (photocatalysis and sensing) and energy (photovoltaics, water splitting, photo-/electrochromics, and hydrogen storage). Synthesis of TiO2nanoparticles with specific size and structural phase is crucial, for solar sell application. Monodispersed spherical colloids with minimum size variation (5% or less) is essential for the fabrication of photonic crystals. When sensitized with organic dyes or inorganic narrow band gap semiconductors, TiO2can absorb light into the visible light region and convert solar energy into electrical energy for solar cell applications. TiO2nanomaterials also have been widely studied for water splitting and hydrogen production due to their suitable electronic band structure given the redox potential of water. Again nanostructured TiO2has extensively been studied for hydrogen storage with good storage capacity and easy releasing procedure. All these issues and related finding will be discussed in this review.
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Gnawali, Guna Nidha, Shankar P. Shrestha, Khem N. Poudyal, Indra B. Karki, and Ishwar Koirala. "Study on the effect of growth-time and seed-layers of Zinc Oxide nanostructured thin film prepared by the hydrothermal method for liquefied petroleum gas sensor application." BIBECHANA 16 (November 22, 2018): 145–53. http://dx.doi.org/10.3126/bibechana.v16i0.21557.

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Gas sensors are devices that can convert the concentration of an analytic gas into an electronic signal. Zinc oxide (ZnO) is an important n-type metal oxide semiconductor which has been utilized as gas sensor for several decades. In this work, ZnO nanostructured films were synthesized by a hydrothermal route from ZnO seeds and used as a liquefied petroleum gas (LPG) sensor. At first ZnO seed layers were deposited on glass substrates by using spin coating method, then ZnO nanostructured were grown on these substrates by using hydrothermal growth method for different time duration. The effect of growth time and seed layers of ZnO nanostructured on its structural, optical, and electrical properties was studied. These nanostructures were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy, and four probes sheet resistance measurement unit. The sensing performances of the synthetic ZnO nanostructures were investigated for LPG.XRD showed that all the ZnO nanostructures were hexagonal crystal structure with preferential orientation. SEM reviled that the size of nanostructure increased with increase in growth time. Band gap and sheet resistance for ZnO nanostructured thin film decreased with increase in growth time. ZnO nanostructured thin film showed high sensitivity towards LPG gas. The sensitivity of the film is observed to increase with increase in no of seed layers as well as growth time. The dependence of the LPG sensing properties on the different growth time of ZnO nanostructured was investigated. The sensing performances of the film were investigated by measured change in sheet resistance under expose to LPG gas. BIBECHANA 16 (2019) 145-153
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Suchikova, Y. O., S. S. Kovachov, G. O. Shishkin, D. O. Pimenov, A. S. Lazarenko, V. V. Bondarenko, and I. T. Bogdanov. "Functional model for the synthesis of nanostructures of the given quality level." Archives of Materials Science and Engineering 2, no. 107 (February 1, 2021): 72–84. http://dx.doi.org/10.5604/01.3001.0015.0244.

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Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.
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Leach, Gary W., Sasan V. Grayli, Finlay MacNab, Xin Zhang, and Saeid Kamal. "Hot Electron Extraction Enabled By Single-Crystal Metal Films and Nanostructures." ECS Meeting Abstracts MA2022-01, no. 13 (July 7, 2022): 925. http://dx.doi.org/10.1149/ma2022-0113925mtgabs.

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In contrast to conventional photovoltaic devices which rely on bulk semiconductor material absorption and separation of electron-hole pairs, surface plasmon-based solar energy harvesting employs rectifying metal/dielectric interfaces to capture light and separate charges. Here, we describe the requirements for efficient hot electron extraction in plasmonic photovoltaic devices and demonstrate a new scalable and environmentally friendly electroless deposition method for single-crystal epitaxial noble metals films and nanostructures. The method produces ultra-smooth, low loss, single-crystal noble metal films ideal for subtractive patterning of nanostructures through ion beam milling, and high definition, sub-wavelength single crystal nanostructures through lithographic patterning methods. We describe the nucleation and growth of these metal films and nanostructures in the absence and presence of anionic shape-control agents and examine the role of specific anions in determining the resulting film and nanostructure morphologies via scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). These effects have been exploited to yield large area patterned, and shape-controlled nanoarrays of single crystal metal nanostructures for plasmonic and metamaterial applications. These approaches offer new and cost effective routes to achieve crystalline, shape-controlled surface nanostructure to enable efficient hot electron extraction for energy harvesting and catalysis applications and new noble metal alloys for improved electrocatalysis.
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Dissertations / Theses on the topic "Nanostructured Semiconductors Crystals"

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Xavier, Paulo Adriano. "Estudos espectroscópicos e de dopagem de nanocristais semicondutores de ZnS com íons Co2+ Cu2+." Pós-Graduação em Química, 2013. https://ri.ufs.br/handle/riufs/6110.

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This work reports the study of semiconductor nanocrystals, also known as quantum dots, focusing specifically on zinc sulfide (ZnS). Two different capping agents were used (glutathione and N-acetyl-L-cysteine) for the preparation of ZnS nanocrystals via aqueous route. The study aimed specifically at evaluating the efficacy of the capping agents in the stabilization of semiconductor nanocrystal suspensions towards coalescence as well as in controlling nanocrystal size and optical properties. In addition the effect of doping the ZnS nanocrystals with transition metal ions (Cu2+ and Co2+) on the photoluminescence properties has also been studied. Finally the possibility of energy transfer between the semiconductor nanocrystals and the safranine dye was also evaluated. Spherical-shaped glutathione and N-acetyl-L-cysteine-capped ZnS nanocrystal were obtained with diameters below 5 nm free from coalescence, showing that both iv capping agents were efficient as stabilizers. Both capping agents lead to the formation of ZnS nancrystals with blue fluorescence, typical of the involvement of surface defect states of ZnS. However, samples prepared with glutathione exhibited higher fluorescence intensities than those obtained with N-acetyl-L-cysteine. Upon doping glutathione-capped ZnS nanocrystals with both copper and cobalt the fluorescence intensities decreased gradually following the increase in nominal concentration of dopants, suggesting that cobalt ions played a similar role as copper. Considering both the effect on the intensities and the absence of d-d metal transitions this study suggests that doping reduced the concentration of cation vacancies as well as the involvement of at least one cobalt state in the transition processes. Changes in emission wavelength with different dopant concentrations were not observed probably owing to lack of influence on the nanocrystal size. Finally the preliminary study of fluorescence quenching of semiconductor nanocrystals by safranine dye indicated that significantly low concentrations were able to quench the emissions. Different components of the emission band were distinctly affected. Data analysis by Stern-Volmer plots suggested the occurrence of more than one transfer processes (energy and/or electron transfer). This study will be refined in future works.
No presente trabalho foram estudados nanocristais semicondutores, tambem conhecidos como pontos quanticos ou quantum dots, selecionando-se especificamente o sulfeto de zinco (ZnS). Foram utilizados ois diferentes agentes estabilizantes (glutationa e N-acetil-L-cisteina) na obtencao de nanocristais de ZnS por via aquosa. Buscou-se avaliar, especificamente, a eficiencia dos agentes tiois na estabilizacao das suspensoes de nanocristais frente a agregacao, no controle e distribuicao de tamanhos das particulas, bem como nas propriedades opticas. Estudou-se, alem disto, o efeito da dopagem com ions de metais de transicao (Cu2+ e Co2+) nas propriedades de fluorescencia. Por fim, foi avaliada a possibilidade de transferencia de energia entre os nanocristais semicondutores dopados e o corante safranina. Os nanocristais semicondutores de ZnS estabilizados por glutationa e por N-acetil-L-cisteina foram obtidos com tamanhos abaixo de 5 nm, formas aproximadamente esfericas e livres de agregacao, evidenciando que ambos agentes ii estabilizantes foram eficientes. Ambos agentes estabilizantes levaram a formacao de nanocristais com emissoes na regiao do azul, caracteristicas do envolvimento de estados de defeito de superficie do ZnS. No entanto, as amostras preparadas com glutationa apresentaram maiores intensidades de fluorescencia, quando comparadas com aquelas preparadas com N-acetil-L-cisteina. A dopagem dos nanocristais semicondutores ZnS/Glu com ions cobre e cobalto teve um efeito de diminuir as intensidades de fluorescencia dependente da concentracao nominal dos dopantes em ambos os casos, sugerindo que o cobalto atua de modo analogo ao cobre. Considerando-se tanto o efeito sobre as intensidades de emissao do ZnS quanto a ausencia de transicoes d-d do metal, o estudo sugeriu que a dopagem reduz a concentracao de vacancias de cations, bem como o envolvimento de pelo menos um dos estados eletronicos do cobalto nos processos de transicao. Nao se observou variacoes nos comprimentos de onda para diferentes concentracoes dos dopantes, provavelmente pela ausencia de interferencia no tamanho dos nanocristais semicondutores formados. Por fim, o estudo preliminar da supressao de fluorescencia dos nanocristais semicondutores pelo efeito de diferentes concentracoes do corante safranina mostrou que concentracoes significativamente baixas do corante foram suficientes para diminuir a intensidade de fluorescencia. Diferentes componentes das bandas de emissao dos nanocristais semicondutores foram influenciados de modo distinto. A analise dos dados pelos graficos de Stern-Volmer sugeriu a ocorrencia de mais de um processo de transferencia (energia e/ou eletrons). Este estudo sera aprofundado nos trabalhos futuros.
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Ye, Wei. "Nano-epitaxy modeling and design: from atomistic simulations to continuum methods." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50304.

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The dissertation starts from the understanding of dislocation dissipation mechanism due to the image force acting on the dislocation. This work implements a screw dislocation in solids with free surfaces by a novel finite element model, and then image forces of dislocations embedded in various shaped GaN nanorods are calculated. As surface stress could dramatically influence the behavior of nanostructures, this work has developed a novel analytical framework to solve the stress field of solids with dislocations and surface stress. It is successfully implemented in this framework for the case of isotropic circular nanowires (2D) and the analytical result of the image force has been derived afterwards. Based on the finite element analysis and the analytical framework, this work has a semi-analytical solution to the image force of isotropic nanorods (3D) with surface stress. The influences of the geometrical parameter and surface stress are illustrated and compared with the original finite element result. In continuation, this work has extended the semi-analytical approach to the case of anisotropic GaN nanorods. It is used to analyze image forces on different dislocations in GaN nanorods oriented along polar (c-axis) and non-polar (a, m-axis) directions. This work could contribute to a wide range of nanostructure design and fabrication for dislocation-free devices.
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Li, Fang. "Microstructural properties of semiconductor nanostructures." Thesis, University of Oxford, 2011. http://ora.ox.ac.uk/objects/uuid:396024e1-a646-40ca-8212-cad925b18311.

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Semiconductor nanostructures have attracted great interest owing to their unique physical properties and potential applications in nanoscale functional devices. The enhancement of the physical properties of semiconductor nanostructures and their performance in devices requires a deeper understanding of their fundamental microstructural properties. Thus this thesis is focused on the experimental and theoretical studies of the microstructural properties of two important semiconductor nanostructures: axial heterostructured silicon nanowires with varying doping and indium nitride colloidal nanoparticles. In this thesis, axial heterostructured silicon nanowires with varying doping were synthesized on an oxide-removed Si{111} substrate using a vapour-liquid-solid approach. Their fundamental microstructural properties, including the crystalline structure, wire growth direction and morphologies, were studied using various characterization techniques. It is found that a very small fraction of the silicon nanowires crystallize in a hexagonal (wurtzite) phase, which is thermodynamically unstable in bulk silicon under ambient conditions, while a large majority of the synthesized silicon nanowires exhibit the expected diamond cubic crystalline structure. About 75% of the diamond cubic silicon nanowires synthesized grow in a single <111> direction, while the rest contain growth-related kinks, where the nanowire switches to another direction during the growth. The ~109° silicon nanowire kinks are the most commonly observed, and the growth direction before and after such ~109° kink are both <111>. The sidewalls of silicon nanowires do not change abruptly at the ~109° kink, but exhibit an elbow-shaped structure. It is also found that the nanowire sidewalls exhibit periodic nanofaceting, which is strongly doping-dependent. The nanofaceting is found to occur during the enhanced sidewall growth that arises when the diborane dopant gas is introduced. A thermodynamic model predicting the dependence of nanofacet period on the wire diameter is developed. Another semiconductor nanostructure studied in this thesis is indium nitride colloidal nanoparticles, which were grown using a solution-phase chemical method. The formation of such indium nitride colloidal nanoparticles is confirmed by studying their compositions, crystalline structures and shape using various electron microscopy techniques. The size of the indium nitride colloidal nanoparticles was controlled by varying the time of solution-phase reactions. The most probable size of the colloidal nanoparticles increases and the size distribution broadens with the increase of reaction time. The crystalline structures of the indium nitride colloidal nanoparticles are found to be particle size dependent. The observed dependence of the band gap blueshift of the indium nitride colloidal nanoparticles on the reaction time (hence the particle size) is explained by the quantum-size effect.
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Wilson, Daniel W. "Optical waveguiding in photorefractive crystals : photoinduced polarization conversion and electron waveguiding in semiconductor nanostructures : modes, directional coupling, and discontinuities." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/14934.

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Martin, Aude. "Nonlinear Photonic Nanostructures based on Wide Gap Semiconductor Compounds." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS526/document.

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La consommation d’énergie liée aux technologies de l’information augmente trèsrapidement et dans la mesure où la société a besoin d’être toujours plus connectée tout ens’appuyant sur des solutions durables, les technologies actuelles ne suffisent plus. La photoniqueintégrée s’impose dès lors comme une alternative à l’électronique pour réaliser du traitementdu signal économe en énergie. Au cours de cette thèse, j’ai étudié des structures sub-longueurd’onde en semiconducteur, les cristaux photoniques, qui présentent des propriétés non linéairesimpressionnantes. Plus précisément, le confinement fort et la propagation en lumière lente permettentun traitement sur puce de signal ultra-rapide tout optique, soit à partir de mélange àquatre ondes ou d’auto-modulation de phase. L’originalité est l’utilisation de nouveaux matériauxsemi-conducteurs ayant moins d’absorption non linéaires et par porteurs libres, effets qui limitentla pleine exploitation des effets non linéaires dans les structures photoniques en Silicium. Dansma thèse, des semiconducteurs III-V ont été utilisés pour développer des guides et des cavitéscristal photonique de grande qualité qui sont en mesure de supporter des densités de puissanceoptiques extrêmement élevées ainsi que de grands niveaux de puissance moyenne. J’ai amélioré laconductivité thermique des guides d’ondes grâce à l’intégration hétérogène de membranes GaInPavec du dioxyde de silicium. Cette plateforme permettra à terme de démontrer de l’amplificationsensible à la phase dans le régime continu que j’ai déjà démontré dans le régime pulsé en utilisant des membranes suspendues en GaInP. En parallèle, j’ai démontré des cristaux photoniques de grande qualité dans du Gallium phosphure, qui est un matériau très prometteur en raison de lagrande bande interdite et de la très bonne conductivité thermique. Les résultats préliminaires ontpermis la réalisation d’un régime non linéaire intense (mini-peigne de fréquence, compression etfission de soliton ...)
The energy consumption of the whole ICT ecosystem is growing at a fast paceand in a global context of the search for an ever more connected yet sustainable society, a technologicalbreakthrough is desired. Here, integrated nonlinear photonics will help by providingnovel possibilities for energy efficient signal processing. In this PhD thesis, I have been investigatingsub-wavelength semiconductor structures, particularly photonic crystals, which have shownremarkable nonlinear properties. More specifically the strong confinement and slow light propagationenables on-chip ultra-fast all-optical signal processing, either based on four-wave-mixingor self-phase modulation. The main point here is the use of novel semiconductor materials withimproved nonlinear properties with respect to Silicon. In fact, it has now been acknowledgedthat the nonlinear and free-carriers absorption in Silicon integrated photonic structures is anissue hindering the full exploitation of nonlinear effects. In my thesis, wide-gap III-V semiconductorshave been used to develop high quality photonic crystal waveguides and cavities whichare able to sustain extremely high optical power densities as well as large average power levels.I have demonstrated PhC waveguides with much improved thermal conductivity through heterogeneousintegration of GaInP membranes with silicon dioxide. This will allow continuous wave phase-sensitive amplification, which I already demonstrated in the pulsed regime using GaInPself-suspended membranes. In parallel, I have demonstrated high quality PhC in Gallium Phosphide,which is a very promising material because of the large bandgap and the very good thermalconductivity. Preliminar results demonstrate the achievement of extremely large nonlinear regime(mini-comb, soliton compression and fission ...)
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Yong, Chaw Keong. "Ultrafast carrier dynamics in organic-inorganic semiconductor nanostructures." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:b2efdc6a-1531-4d3f-8af1-e3094747434c.

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This thesis is concerned with the influence of nanoscale boundaries and interfaces upon the electronic processes that occur within the inorganic semiconductors. Inorganic semiconductor nanowires and their blends with semiconducting polymers have been investigated using state-of-the-art ultrafast optical techniques to provide information on the sub-picosecond to nanosecond photoexcitation dynamics in these systems. Chapters 1 and 2 introduce the theory and background behind the work and present a literature review of previous work utilising nanowires in hybrid organic photovoltaic devices, revealing the performances to date. The experimental methods used during the thesis are detailed in Chapter 3. Chapter 4 describes the crucial roles of surface passivation on the ultrafast dynamics of exciton formation in gallium arsenide (GaAs) nanowires. By passivating the surface states of nanowires, exciton formation via the bimolecular conversion of electron-hole plasma can observed over few hundred picoseconds, in-contrast to the fast carrier trapping in 10 ps observed in the uncoated nanowires. Chapter 5 presents a novel method to passivate the surface-states of GaAs nanowires using semiconducting polymer. The carrier lifetime in the nanowires can be strongly enhanced when the ionization potential of the overcoated semiconducting polymer is smaller than the work function of the nanowires and the surface native oxide layers of nanowires are removed. Finally, Chapter 6 shows that the carrier cooling in the type-II wurtzite-zincblend InP nanowires is reduced by order-of magnitude during the spatial charge-transfer across the type-II heterojunction. The works decribed in this thesis reveals the crucial role of surface-states and bulk defects on the carrier dynamics of semiconductor nanowires. In-addition, a novel approach to passivate the surface defect states of nanowires using semiconducting polymers was developed.
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Goh, Wui Hean. "Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47720.

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The objective of this project is to establish a new technology to grow high quality GaN based material by nano selective area growth (NSAG). The motivation is to overcome the limit of the conventional growth method, which yield a high density of dislocation in the epitaxial layer. A low dislocation density in the epitaxial layer is crucial for high performance and high efficiency devices. This project focuses on growth and material characterization of GaN based nanostructures (nanodots and nanostripes) grown using the NSAG method that we developed. NSAG, with a precise control of diameter and position of nanostructures opens the door to new applications such as: 1) single photon source, 2) photonic crystal, 3) coalescence of high quality GaN template, and 4) novel nanodevices.
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El, Barraj Ali. "Growth and electro-thermomigration on semiconductor surfaces by low energy electron microscopy." Thesis, Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0393.

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Dans ce mémoire sont abordées quelques études sur la croissance, l'électromigration et la thermomigration de la surface des semiconducteurs tels que le Ge(111), le Si(100) et le Si(111). Sur le plan expérimental, la Microscopie à Electrons Lents (LEEM) nous a permis d'accéder à la dynamiques des phénomènes in situ et en temps réel. Nous étudions l'électromigration et la thermomigration sur la surface de Si(100) qui présente deux reconstructions de surfaces (2x1) et (1x2) selon l'orientation des dimères. Nous montrons que l'anisotropie de diffusion peut affecter le sens de mouvement des nanostructures (trous et îlots). Nous étudions aussi l'électromigration et la thermomigration sur la surface de Si(111). Nous montrons que les trous (1x1) dans la phase (7x7) bougent dans le sens opposé au courant électrique, et dans le même sens du gradient thermique. Nous avons obtenu la charge effective et le coefficient de Soret des atomes de Si en présence d'un courant électrique et d'un gradient thermique. Enfin est abordée l'étude de la nucléation, la croissance et la coalescence dynamique de gouttelettes d'Au sur la surface d'Au/Ge(111), ainsi que l'électromigration des domaines 2D d'Au/Ge(111)-(√3x√3) dans la phase (1x1)
This thesis is focused on the study of the growth, electromigration and thermomigration of nanostructures on the surface of semiconductors such as Si(100), Si(111) and Ge(111). On an experimental viewpoint, Low Energy Electron Microscopy (LEEM) allows us to access to the dynamics of the phenomena in situ and in real time. We have studied under electromigration and thermomigration the motions of 2D monoatomic holes and islands on the Si (100) surface. We have shown that diffusion anisotropy due to (2x1) and (1x2) surface reconstructions can affect the direction of motion of nanostructures. We have also studied electromigration and thermomigration of Si (111) surface. We show that 2D-(1x1) holes in the (7x7) phase move in the direction opposite to the electric current, while in the direction of the thermal gradient. We have obtained the effective charge and the Soret coefficient of Si atoms in presence of an electric current and a thermal gradient. At last, the nucleation, growth and dynamic coalescence of Au droplets on Au/Ge(111) surface is studied, and the electromigration of 2D Au/Ge(111)-( √3x√3) domains on Au/Ge(111)-(1x1) surface
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Wu, Yimin A. "Towards large area single crystalline two dimensional atomic crystals for nanotechnology applications." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:bdb827e5-f3fd-4806-8085-0206e67c7144.

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Nanomaterials have attracted great interest due to the unique physical properties and great potential in the applications of nanoscale devices. Two dimensional atomic crystals, which are atomic thickness, especially graphene, have triggered the gold rush recently due to the fascinating high mobility at room temperature for future electronics. The crystal structure of nanomaterials will have great influence on their physical properties. Thus, this thesis is focused on developing the methods to control the crystal structure of nanomaterials, namely quantum dots as semiconductor, boron nitride (BN) as insulator, graphene as semimetal, with low cost for their applications in photonics, structural support and electronics. In this thesis, firstly, Mn doped ZnSe quantum dots have been synthesized using colloidal synthesis. The shape control of Mn doped ZnSe quantum dots has been achieved from branched to spherical by switching the injection temperature from kinetics to thermodynamics region. Injection rates have been found to have effect on controlling the crystal phase from zinc blende to wurtzite. The structural-property relationship has been investigated. It is found that the spherical wurtzite Mn doped ZnSe quantum dots have the highest quantum yield comparing with other shape or crystal phase of the dots. Then, the Mn doped ZnSe quantum dots were deposited onto the BN sheets, which were micron-sized and fabricated by chemical exfoliation, for high resolution imaging. It is the first demonstration of utilizing ultrathin carbon free 2D atomic crystal as support for high resolution imaging. Phase contrast images reveal moiré interference patterns between nanocrystals and BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes using a newly developed equation method. Double diffraction is observed and has been analyzed using a vector method. As only a few microns sized 2D atomic crystal, like BN, can be fabricated by the chemical exfoliation. Chemical vapour deposition (CVD) is as used as an alternative to fabricate large area graphene. The mechanism and growth dynamics of graphene domains have been investigated using Cu catalyzed atmospheric pressure CVD. Rectangular few layer graphene domains were synthesized for the first time. It only grows on the Cu grains with (111) orientation due to the interplay between atomic structure of Cu lattice and graphene domains. Hexagonal graphene domains can form on nearly all non-(111) Cu surfaces. The few layer hexagonal single crystal graphene domains were aligned in their crystallographic orientation over millimetre scale. In order to improve the alignment and reduce the layer of graphene domains, a novel method is invented to perform the CVD reaction above the melting point of copper (1090 ºC) and using molybdenum or tungsten to prevent the balling of the copper from dewetting. By controlling the amount of hydrogen during the growth, individual single crystal domains of monolayer over 200 µm are produced determined by electron diffraction mapping. Raman mapping shows the monolayer nature of graphene grown by this method. This graphene exhibits a linear dispersion relationship and no sign of doping. The large scale alignment of monolayer hexagonal graphene domains with epitaxial relationship on Cu is the key to get wafer-sized single crystal monolayer graphene films. This paves the way for industry scale production of 2D single crystal graphene.
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Widmann, Frédéric. "Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10234.

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Ce travail a porte sur la croissance epitaxiale des nitrures d'elements iii gan, aln, et inn, en utilisant l'epitaxie par jets moleculaires assistee par plasma d'azote. Nous avons optimise les premiers stades de la croissance de gan ou aln sur substrat al#2o#3 (0001). Le processus utilise consiste a nitrurer la surface du substrat a l'aide du plasma d'azote, afin de la transformer en aln, puis a faire croitre une couche tampon d'aln ou de gan a basse temperature, avant de reprendre la croissance de gan ou aln a haute temperature (680 a 750c). Nous avons en particulier etudie les proprietes d'une couche de gan en fonction de la temperature a laquelle est realisee l'etape de nitruration. Lorsque les conditions de demarrage de la croissance sont optimisees, nous avons pu observer des oscillations de rheed pendant la croissance de la couche de gan. Nous avons etudie l'effet du rapport v/iii sur la morphologie de surface et les proprietes optiques et structurales de cette couche. Nous avons propose l'utilisation de l'indium en tant que surfactant pour ameliorer ces proprietes. Nous avons ensuite aborde la realisation de superreseaux gan/aln dont nous avons optimise les interfaces. Les mecanismes de relaxation des contraintes de aln sur gan et gan sur aln ont ete etudies. Nous avons egalement elabore les alliages algan et ingan, comme barrieres quantiques dans les heterostructures. Nous avons montre que la relaxation elastique des contraintes de gan en epitaxie sur aln donne lieu a la formation d'ilots de tailles nanometriques, qui se comportent comme des boites quantiques. Leur densite et leur taille dependent de la temperature de croissance, et des conditions de murissement apres croissance. Les proprietes optiques de ces ilots sont gouvernees a la fois par les effets de confinement quantique et par le fort champ piezo-electrique induit par la contrainte dans les ilots.
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Books on the topic "Nanostructured Semiconductors Crystals"

1

Optical properties of semiconductor nanocrystals. Cambridge, UK: Cambridge Unviersity Press, 1998.

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1938-, Ėfros A. L., Lockwood David J, and Tsybeskov Leonid, eds. Semiconductor nanocrystals: From basic principles to applications. New York: Kluwer Academic / Plenum Publishers, 2003.

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M, Salemink H. W., Pashley M. D, North Atlantic Treaty Organization. Scientific Affairs Division., and NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Subnanometer Scale (1992 : Riva del Garda, Italy), eds. Semiconductor interfaces at the sub-nanometer scale. Dordrecht: Kluwer Academic Publishers, 1993.

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Li, Jing, and Xiao-Ying Huang. Nanostructured crystals: An unprecedented class of hybrid semiconductors exhibiting structure-induced quantum confinement effect and systematically tunable properties. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.16.

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This article describes the structure-induced quantum confinement effect in nanostructured crystals, a unique class of hybrid semiconductors that incorporate organic and inorganic components into a single-crystal lattice via covalent (coordinative) bonds to form extended one-, two- and three-dimensional network structures. These structures are comprised of subnanometer-sized II-VI semiconductor segments (inorganic component) and amine molecules (organic component) arranged into perfectly ordered arrays. The article first provides an overview of II-VI and III-V semiconductors, II-VI colloidal quantum dots, inorganic-organic hybrid materials before discussing the design and synthesis of I-VI-based inorganic-organic hybrid nanostructures. It also considers the crystal structures, quantum confinement effect, bandgaps, and optical properties, thermal properties, thermal expansion behavior of nanostructured crystals.
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Fauchet, Philippe M., Jillian M. Buriak, Leigh T. Canham, Nobuyoshi Koshida, and White Bruce E. Jr. Microcrystalline and Nanocrystalline Semiconductors - 2000. University of Cambridge ESOL Examinations, 2014.

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Tanaka, Kazunobu, Michael J. Sailor, Chuang-Chuang Tsai, and Leigh T. Canham. Microcrystalline and Nanocrystalline Semiconductors - 1998. University of Cambridge ESOL Examinations, 2014.

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(Editor), M. J. Sailor, Chuang Chuang Tsai (Editor), Leigh T. Canham (Editor), and K. Tanaka (Editor), eds. Microcrystalline and Nanocrystalline Semiconductors - 1998: Symposium Held November 30-December 3, 1998, Boston, Massachusetts, U.S.A (Materials Research Society Symposia Proceedings, 536.). Materials Research Society, 1999.

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(Editor), Philippe Max Fauchet, Jillian M. Buriak (Editor), Leigh T. Canham (Editor), Mobuyoshi Koshida (Editor), and Burce E. White (Editor), eds. Microcrystalline and Nanocrystalline Semiconductors--2000: Symposium Held November 27-30, 2000, Boston, Massachusetts, U.S.A. (Materials Research Society Symposia Proceedings, V. 638.). Materials Research Society, 2001.

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CondensedPhase Molecular Spectroscopy and Photophysics. John Wiley and Sons Ltd, 2013.

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Ferry, David K., and Shunri Oda. Nanoscale Silicon Devices. Taylor & Francis Group, 2018.

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Book chapters on the topic "Nanostructured Semiconductors Crystals"

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Fischetti, Massimo V., and William G. Vandenberghe. "Single-Electron Dynamics in Crystals." In Advanced Physics of Electron Transport in Semiconductors and Nanostructures, 163–83. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-01101-1_8.

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Fischetti, Massimo V., and William G. Vandenberghe. "Crystals: Lattice, Reciprocal Lattice, and Symmetry." In Advanced Physics of Electron Transport in Semiconductors and Nanostructures, 39–55. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-01101-1_3.

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Fischetti, Massimo V., and William G. Vandenberghe. "The Electronic Structure of Crystals: Theoretical Framework." In Advanced Physics of Electron Transport in Semiconductors and Nanostructures, 57–69. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-01101-1_4.

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Fischetti, Massimo V., and William G. Vandenberghe. "The Electronic Structure of Crystals: Computational Methods." In Advanced Physics of Electron Transport in Semiconductors and Nanostructures, 71–97. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-01101-1_5.

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Vyvenko, Oleg, and Anton Bondarenko. "Crystal Lattice Defects as Natural Light Emitting Nanostructures in Semiconductors." In Springer Series in Chemical Physics, 405–36. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-05974-3_21.

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Zhuiykov, Serge. "Semiconductor Nano-Crystals in Environmental Sensors." In Nanostructured Semiconductors, 475–538. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-08-101919-1.00009-x.

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Zhuiykov, Serge. "Structural Chemical Modification of Semiconductor Nano-Crystals." In Nanostructured Semiconductors, 1–52. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-08-101919-1.00001-5.

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"Nanostructured optoelectronic devices: photonic crystals and microcavities." In Compound Semiconductors 2004, 141–46. CRC Press, 2005. http://dx.doi.org/10.1201/9781482269222-33.

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M. Khayyat, Maha. "Semiconductor Epitaxial Crystal Growth: Silicon Nanowires." In 21st Century Nanostructured Materials - Physics, Chemistry, Classification, and Emerging Applications in Industry, Biomedicine, and Agriculture. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.100935.

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The topic of nanowires is one of the subjects of technological rapid-progress research. This chapter reviews the experimental work and the advancement of nanowires technology since the past decade, with more focus on the recent work. Nanowires can be grown from several materials including semiconductors, such as silicon. Silicon is a semiconductor material with a very technological importance, reflected by the huge number of publications. Nanowires made of silicon are of particular technological importance, in addition to their nanomorphology-related applications. A detailed description of the first successfully reported Vapor–Liquid–Solid (VLS) 1-D growth of silicon crystals is presented. The bottom-up approach, the supersaturation in a three-phase system, and the nucleation at the Chemical Vapor Deposition (CVD) processes are discussed with more focus on silicon. Positional assembly of nanowires using the current available techniques, including Nanoscale Chemical Templating (NCT), can be considered as the key part of this chapter for advanced applications. Several applied and conceptional methods of developing the available technologies using nanowires are included, such as Atomic Force Microscopy (AFM) and photovoltaic (PV) cells, and more are explained. The final section of this chapter is devoted to the future trend in nanowires research, where it is anticipated that the effort behind nanowires research will proceed further to be implemented in daily electronic tools satisfying the demand of low-weight and small-size electronic devices.
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Ihn, Thomas. "Semiconductor crystals." In Semiconductor Nanostructures, 11–18. Oxford University Press, 2009. http://dx.doi.org/10.1093/acprof:oso/9780199534425.003.0002.

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Conference papers on the topic "Nanostructured Semiconductors Crystals"

1

Hu, L., and G. Chen. "Thermal Radiative Heat Transfer Between Closely Spaced Nanostructures." In ASME 4th Integrated Nanosystems Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/nano2005-87066.

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Thermal emission control with nanostructures has attracted considerable attention because of its potential applications in thermophotovoltaic (TPV) devices [1–3]. The optical-to-electrical conversion in a TPV system is driven by photons with energy higher than the electronic bandgap of the photovoltaic cell. A narrow-band emitter with emission spectrum slightly above the bandgap is ideal, which maximizes the conversion efficiency as well as minimizes the waste heat that deteriorates the performance of the cell. Specially designed nanostructures alters the band structure of photons in much the same way as the crystal lattice does on electrons inside semiconductors, thus changing the thermal emission spectrum. By employing nanostructure-enabled emission control, Lin, et al, projected an efficiency of 34% for TPV systems [2].
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Grosse, S., R. Arnold, A. Kriele, G. von Plessen, J. P. Kotthaus, J. Feldmann, R. Rettig, T. Marschner, and W. Stolz. "Relaxation dynamics of excitons and electron-hole pairs studied by spatiotemporal pump and probe experiments." In Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/qo.1997.qthd.4.

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Ultrafast laser spectroscopy has been used extensively to study carrier relaxation phenomena in semiconductors and semiconductor nanostructures. Accordingly, several physical issues of the carrier thermalization and recombination scenario after optical excitation are well understood. This is particularly true for many III-V quantum well structures. However, there is a basic problem when using light-matter interaction to study carrier relaxation in crystals. As a consequence of (i) the conservation law for the total momentum and (ii) the vanishing momentum of visible light as compared to the extension of the Brillouin-zone only electron-hole (e-h) pair transitions with vanishing total wavevector (K→=0) can be excited and detected, provided no other quasi-particle carrying momentum is involved in the optical transition.
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Yao, Yu-Feng, Keng-Ping Chou, Chi-Chung Chen, Charng-Gan Tu, Tsai-Pei Li, Yung-Chen Cheng, Wen-Yen Chang, et al. "Crystal Structures and Surface Plasmon Properties of GaZnO Nanostructures." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819049.

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Liu, Ruijia, Chang-Jiang Chen, Annan Shang, Yun Goo Lee, and Stuart Yin. "Nanostructure-enabled longer lock-on time GaAs photoconductive semiconductor switches." In Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XIV, edited by Shizhuo Yin and Ruyan Guo. SPIE, 2020. http://dx.doi.org/10.1117/12.2570747.

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Yang, Juekuan, Scott W. Waltermire, Yang Yang, Deyu Li, Xiaoxia Wu, and Terry Xu. "Measurements of the Thermal Conductivity of Individual α-Tetragonal Boron Nanoribbons." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44337.

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Boron-based materials (i.e., boron and its borides) are mostly semiconductors with complex structures. These structures are characterized by an arrangement of an icosahedral cluster of B12 atoms [1]. The complexity of the crystal structure gives boron-based material a high melting point and low thermal conductivity at high temperature. On the other hand, the Seebeck coefficients and electrical conductivities of most bulk boron-based materials increase as temperature increases. Therefore, bulk boron-based materials are good candidates for high-temperature thermoelectric applications [2]. Due to the unique properties of bulk boron-based materials, one-dimensional nanostructures of boron-based materials have also attracted much attention, and various boron-based nanostructures have been synthesized recently [3]. These boron-based nanostructures are projected to be promising materials for novel nanoelectronic and nanoelectro-mechanical devices, as well as high temperature thermoelectric materials. However, compared to the extensive studies of carbon nanotubes and silicon nanowires, little has been done on the property characterization of boron and boride nanostructures.
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Galiy, P. V., T. M. Nenchuk, O. R. Dveriy, A. Ciszewski, P. Mazur, and I. O. Poplavskyy. "Study of Self-assembled 2D Ag Nanostructures Intercalated into In4Se3 Layered Semiconductor Crystal." In 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP). IEEE, 2018. http://dx.doi.org/10.1109/nap.2018.8915253.

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Rupp, Cory, M. Frenzel, A. Evgrafov, K. Maute, and Martin L. Dunn. "Design of Nanostructured Phononic Materials." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-82206.

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The ability of a material containing a periodic arrangement of second-phase inclusions to prevent transmission of waves in certain frequency ranges is well known. This is true for all types of waves including acoustic, electromagnetic, and elastic. These forbidden regions are called band gaps. They arise as incident waves are effectively attenuated by interference among the scattered wave fields. Indeed much of current semiconductor technology revolves around band-gap engineering with regard to electron flow in the periodic potentials resulting from atoms in their lattice positions. The phenomena are also being heavily explored in the context of light via the development of photonic crystals. Things become more interesting if instead of thinking of periodic arrangements, one selectively removes some of the inclusions in the periodic geometry creating defects. If done right, this can result in a material microstructure that can guide waves through the material. Advances in nano and micromanufacturing technologies in the last couple of years have opened up the possibility to fabricate heterogeneous material systems with precise positional control of the constituent materials. For example, it is now possible to place thin-film materials precisely at a resolution of fractions of a micron. Depending on how it is done, one can envision designing a material so that a wave will be guided to a particular location and/or away from another and as a result damping or amplifying the wave locally. In this work we develop a topology optimization approach to design such nanostructured materials. We demonstrate the approach through the design of three multifunctional phononic composite materials composed of silicon and aluminum: i) a grating designed to stop wave propagation at a specified frequency, ii) a waveguide that bends the propagation path of an elastic wave, and iii) an elastic switch that switches an input signal between two output ports based on the state of the input signal.
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Kobayashi, Nobuhiko P. "A new route to grow single-crystal group III-V compound semiconductor nanostructures on non-single-crystal substrates." In Optics East 2007, edited by Nibir K. Dhar, Achyut K. Dutta, and M. Saif Islam. SPIE, 2007. http://dx.doi.org/10.1117/12.747485.

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Liang, Zhi, and Hai-Lung Tsai. "Effect of Interlayer Between Semiconductors on Interfacial Thermal Transport." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75273.

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Due to the high surface–to–volume ratio in nanostructured components and devices, thermal transport across the solid–solid interface strongly affects the overall thermal behavior. Materials such as Si, Ge, SiO2 and GaAs are widely used in advanced semiconductor devices. These materials may have differences in both crystal structure and Debye temperature. We have shown that the thermal transport across such interfaces can be improved by inserting an interlayer between the two confining solids. If the two confining solids are similar in crystal structure and lattice constant but different in Debye temperature, it is predicted from the molecular dynamics modeling that an over 50% reduction of the thermal boundary resistance can be achieved by inserting a 1– to 2–nm–thick interlayer which has similar crystal structure and lattice constant as the two solids. In this case, the Debye temperature of the optimized interlayer is approximately the square root of the product of the Debye temperatures of the two solids. However, if the interlayer has large lattice mismatches with the two confining solids, a thin disordered layer is formed in the solid and in the interlayer adjacent to their interface. Such a disordered layer can distort the phonon density of states at the interface and strongly affects the interfacial phonon transport. In this case, it is found that a 70% reduction of the thermal boundary resistance can be achieved if the lattice constant of the interlayer is smaller than that of the two solids and the Debye temperature of the interlayer is approximately the average of the Debye temperatures of the two solids. On the other hand, if the two solids have a large difference in both lattice constant and Debye temperature, the optimized interlayer should have a lattice constant near the average of the lattice constants of the two solids. For this case, an over 60% reduction of the thermal boundary resistance can be achieved if the Debye temperature of the interlayer is equal to or slightly higher than the square root of the product of the Debye temperatures of the two solids. The calculated phonon density of states shows that the distorted phonon spectra induced by large lattice mismatches are generally broader than the phonon spectra of the corresponding undistorted case. The broader interfacial phonon spectra increase the overlap between the phonon spectra of the two solids at the interface which leads to improved thermal boundary transport.
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Kritskaya, Tatiana, Leonid Schwartzman, Vladimir Dodonov, and Anatoly Kravtsov. "NEW DIRECTIONS OF MODERNIZATION OF SILICON TECHNOLOGY OF SEMICONDUCTOR PURITY." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1549.silicon-2020/29-34.

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In the current economic conditions, a new approach to industrial methods of obtaining polycrystalline and monocrystalline silicon of semiconductor purity is required. This is a reduction in the cost and increase in the productivity of processes while ensuring their environmental safety (optimization of the used raw materials, a closed production cycle, a decrease in energy consumption, special methods of processing and alloying single crystals to control their mechanical properties, thermal stability and radiation resistance).
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