Relevant bibliographies by topics / Nanofocused X-Ray diffraction

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Academic literature on the topic 'Nanofocused X-Ray diffraction'

Author: Grafiati
Published: 25 May 2024

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Journal articles on the topic "Nanofocused X-Ray diffraction"

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Ren, Zhe, Francesca Mastropietro, Anton Davydok, Simon Langlais, Marie-Ingrid Richard, Jean-Jacques Furter, Olivier Thomas, et al. "Scanning force microscope forin situnanofocused X-ray diffraction studies." Journal of Synchrotron Radiation 21, no. 5 (August 6, 2014): 1128–33. http://dx.doi.org/10.1107/s1600577514014532.

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A compact scanning force microscope has been developed forin situcombination with nanofocused X-ray diffraction techniques at third-generation synchrotron beamlines. Its capabilities are demonstrated on Au nano-islands grown on a sapphire substrate. The newin situdevice allows forin situimaging the sample topography and the crystallinity by recording simultaneously an atomic force microscope (AFM) image and a scanning X-ray diffraction map of the same area. Moreover, a selected Au island can be mechanically deformed using the AFM tip while monitoring the deformation of the atomic lattice by nanofocused X-ray diffraction. Thisin situapproach gives access to the mechanical behavior of nanomaterials.
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Hruszkewycz, S. O., M. V. Holt, J. Maser, C. E. Murray, M. J. Highland, C. M. Folkman, and P. H. Fuoss. "Coherent Bragg nanodiffraction at the hard X-ray Nanoprobe beamline." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2010 (March 6, 2014): 20130118. http://dx.doi.org/10.1098/rsta.2013.0118.

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Bragg coherent diffraction with nanofocused hard X-ray beams provides unique opportunities for quantitative in situ studies of crystalline structure in nanoscale regions of complex materials and devices by a variety of diffraction-based techniques. In the case of coherent diffraction imaging, a major experimental challenge in using nanoscale coherent beams is maintaining a constant scattering volume such that coherent fringe visibility is maximized and maintained over the course of an exposure lasting several seconds. Here, we present coherent Bragg diffraction patterns measured from different nanostructured thin films at the Sector 26 Nanoprobe beamline at the Advanced Photon Source and demonstrate that with nanoscale positional control, coherent diffraction patterns can be measured with source-limited fringe visibilities more than 50% suitable for imaging by coherent Bragg ptychography techniques.
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Nicolas, Jan-David, Tobias Reusch, Markus Osterhoff, Michael Sprung, Florian J. R. Schülein, Hubert J. Krenner, Achim Wixforth, and Tim Salditt. "Time-resolved coherent X-ray diffraction imaging of surface acoustic waves." Journal of Applied Crystallography 47, no. 5 (September 4, 2014): 1596–605. http://dx.doi.org/10.1107/s1600576714016896.

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Time-resolved coherent X-ray diffraction experiments of standing surface acoustic waves, illuminated under grazing incidence by a nanofocused synchrotron beam, are reported. The data have been recorded in stroboscopic mode at controlled and varied phase between the acoustic frequency generator and the synchrotron bunch train. At each time delay (phase angle), the coherent far-field diffraction pattern in the small-angle regime is inverted by an iterative algorithm to yield the local instantaneous surface height profile along the optical axis. The results show that periodic nanoscale dynamics can be imaged at high temporal resolution in the range of 50 ps (pulse length).
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Chayanun, Lert, Susanna Hammarberg, Hanna Dierks, Gaute Otnes, Alexander Björling, Magnus T. Borgström, and Jesper Wallentin. "Combining Nanofocused X-Rays with Electrical Measurements at the NanoMAX Beamline." Crystals 9, no. 8 (August 20, 2019): 432. http://dx.doi.org/10.3390/cryst9080432.

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The advent of nanofocused X-ray beams has allowed the study of single nanocrystals and complete nanoscale devices in a nondestructive manner, using techniques such as scanning transmission X-ray microscopy (STXM), X-ray fluorescence (XRF) and X-ray diffraction (XRD). Further insight into semiconductor devices can be achieved by combining these techniques with simultaneous electrical measurements. Here, we present a system for electrical biasing and current measurement of single nanostructure devices, which has been developed for the NanoMAX beamline at the fourth-generation synchrotron, MAX IV, Sweden. The system was tested on single InP nanowire devices. The mechanical stability was sufficient to collect scanning XRD and XRF maps with a 50 nm diameter focus. The dark noise of the current measurement system was about 3 fA, which allowed fly scan measurements of X-ray beam induced current (XBIC) in single nanowire devices.
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Zaluzhnyy, Ivan, Ruslan Kurta, Marcus Scheele, Frank Schreiber, Boris Ostrovskii, and Ivan Vartanyants. "Angular X-ray Cross-Correlation Analysis (AXCCA): Basic Concepts and Recent Applications to Soft Matter and Nanomaterials." Materials 12, no. 21 (October 23, 2019): 3464. http://dx.doi.org/10.3390/ma12213464.

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Angular X-ray cross-correlation analysis (AXCCA) is a technique which allows quantitative measurement of the angular anisotropy of X-ray diffraction patterns and provides insights into the orientational order in the system under investigation. This method is based on the evaluation of the angular cross-correlation function of the scattered intensity distribution on a two-dimensional (2D) detector and further averaging over many diffraction patterns for enhancement of the anisotropic signal. Over the last decade, AXCCA was successfully used to study the anisotropy in various soft matter systems, such as solutions of anisotropic particles, liquid crystals, colloidal crystals, superlattices composed by nanoparticles, etc. This review provides an introduction to the technique and gives a survey of the recent experimental work in which AXCCA in combination with micro- or nanofocused X-ray microscopy was used to study the orientational order in various soft matter systems.
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Abbey, Brian, Ruben A. Dilanian, Connie Darmanin, Rebecca A. Ryan, Corey T. Putkunz, Andrew V. Martin, David Wood, et al. "X-ray laser–induced electron dynamics observed by femtosecond diffraction from nanocrystals of Buckminsterfullerene." Science Advances 2, no. 9 (September 2016): e1601186. http://dx.doi.org/10.1126/sciadv.1601186.

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X-ray free-electron lasers (XFELs) deliver x-ray pulses with a coherent flux that is approximately eight orders of magnitude greater than that available from a modern third-generation synchrotron source. The power density of an XFEL pulse may be so high that it can modify the electronic properties of a sample on a femtosecond time scale. Exploration of the interaction of intense coherent x-ray pulses and matter is both of intrinsic scientific interest and of critical importance to the interpretation of experiments that probe the structures of materials using high-brightness femtosecond XFEL pulses. We report observations of the diffraction of extremely intense 32-fs nanofocused x-ray pulses by a powder sample of crystalline C60. We find that the diffraction pattern at the highest available incident power significantly differs from the one obtained using either third-generation synchrotron sources or XFEL sources operating at low output power and does not correspond to the diffraction pattern expected from any known phase of crystalline C60. We interpret these data as evidence of a long-range, coherent dynamic electronic distortion that is driven by the interaction of the periodic array of C60 molecular targets with intense x-ray pulses of femtosecond duration.
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Bussone, Genziana, Rüdiger Schott, Andreas Biermanns, Anton Davydok, Dirk Reuter, Gerardina Carbone, Tobias U. Schülli, Andreas D. Wieck, and Ullrich Pietsch. "Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams." Journal of Applied Crystallography 46, no. 4 (June 7, 2013): 887–92. http://dx.doi.org/10.1107/s0021889813004226.

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Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.
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Li, Qian, Samuel D. Marks, Sunil Bean, Michael Fisher, Donald A. Walko, Anthony D. DiChiara, Xinzhong Chen, et al. "Simultaneous scanning near-field optical and X-ray diffraction microscopy for correlative nanoscale structure–property characterization." Journal of Synchrotron Radiation 26, no. 5 (August 15, 2019): 1790–96. http://dx.doi.org/10.1107/s1600577519008609.

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A multimodal imaging instrument has been developed that integrates scanning near-field optical microscopy with nanofocused synchrotron X-ray diffraction imaging. The instrument allows for the simultaneous nanoscale characterization of electronic/near-field optical properties of materials together with their crystallographic structure, facilitating the investigation of local structure–property relationships. The design, implementation and operating procedures of this instrument are reported. The scientific capabilities are demonstrated in a proof-of-principle study of the insulator–metal phase transition in samarium sulfide (SmS) single crystals induced by applying mechanical pressure via a scanning tip. The multimodal imaging of an in situ tip-written region shows that the near-field optical reflectivity can be correlated with the heterogeneously transformed structure of the near-surface region of the crystal.
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Wallentin, Jesper, Daniel Jacobsson, Markus Osterhoff, Magnus T. Borgström, and Tim Salditt. "Bending and Twisting Lattice Tilt in Strained Core–Shell Nanowires Revealed by Nanofocused X-ray Diffraction." Nano Letters 17, no. 7 (June 21, 2017): 4143–50. http://dx.doi.org/10.1021/acs.nanolett.7b00918.

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Marçal, Lucas A. B., Eitan Oksenberg, Dmitry Dzhigaev, Susanna Hammarberg, Amnon Rothman, Alexander Björling, Eva Unger, Anders Mikkelsen, Ernesto Joselevich, and Jesper Wallentin. "In Situ Imaging of Ferroelastic Domain Dynamics in CsPbBr3 Perovskite Nanowires by Nanofocused Scanning X-ray Diffraction." ACS Nano 14, no. 11 (October 19, 2020): 15973–82. http://dx.doi.org/10.1021/acsnano.0c07426.

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Dissertations / Theses on the topic "Nanofocused X-Ray diffraction"

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Anjum, Taseer. "Nanomechanics : mechanical response analysis of semiconductor GaAs nanowires by using finite element method and x-ray diffraction techniques." Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0173.

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Au cours des deux dernières décennies, d’énormes progrès ont été réalisés dans la miniaturisation des dispositifs optoélectroniques et des systèmes nanoélectromécaniques à base de capteurs grâce à l'intégration de nanofils quasi unidimensionnels. Le présent travail porte sur l'analyse de la réponse mécanique de nanofils GaAs semi-conducteurs préparés sur un substrat de silicium par épitaxie par jet moléculaire. Le comportement mécanique du nanofil est caractérisé par des essais de flexion in situ dans un MEB et en combinaison avec la diffraction des rayons X. L'objectif de ce travail est d'identifier le mécanisme responsable de la relaxation anélastique qui a été observée après des essais de flexion ou flexion ou de flambage effectués sur des nanofils de GaAs dopés avec du Be. La déformation anélastique est quantifiée en utilisant un algorithme de corrélation d'images numériques. L'accord entre les simulations FEM et les données mesurées montre que la relaxation anélastique peut être attribuée à l’ effet Gorsky dans les nanofils, c’est à dire au couplage entre la diffusion des défauts ponctuels et le gradient de contrainte. Les nanofils de GaAs dopé avec du Be ont été sollicités in situ en flexion latérale trois points en utilisant SFINX et la XRD sur la ligne de lumière P23 à PETRA III. La flexion a été induite dans les nanofils par le mouvement latéral de la pointe du SFINX. Les nanofils présentent une déformation élastique, une déformation plastique et une relaxation anélastique dépendant du temps. La relaxation anélastique donne lieu à un coefficient de diffusion de 2.71 x 10 puissance -13 cm puissance 2 et est en accord avec un effet Gorsky
During the last two decades, tremendous advances have been made in the miniaturization of opto-electronic devices and sensor-based nano-electromechanical systems by the integration of quasi one-dimensional nanowires. The present work focuses on the mechanical response analysis of semiconductor gallium arsenide (GaAs) nanowires grown on silicon substrate via molecular beam epitaxy. The mechanical behavior of the nanowires is characterized via in-situ bending tests in a scanning electron microscope and in combination with x-ray diffraction. The aim of this work is to identify the anelastic strain relaxation of the nanowires which was observed as a direct consequence of cantilever bending tests and buckling tests on free standing Be-doped GaAs nanowires. The anelastic strain is derived by using a digital image correlation algorithm. The agreement between FEM simulations and measured data conclusively relate the anelastic relaxation in the investigated nanowires to the Gorsky effect, i.e. the coupling between point defects diffusion and stress gradient. Be doped GaAs nanowires are further examined in the lateral three-point bending configuration by employing the Scanning Force Microscope for in situ Nanofocused X-ray diffraction (SFINX) and x-ray diffraction at beamline P23 at PETRA III. The bending of the nanowires was induced by the lateral movement of the tip of SFINX . The nanowires demonstrate elastic deformation, plastic deformation, and time-dependent anelastic relaxation. The anelastic relaxation yields a diffusion coefficient of 2.71 x 10 puissance -13 cm puissance 2 and is consistent with a Gorsky effect
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Henkel, Thilo Johannes. "Strain-related phenomena in (In,Ga)N/GaN nanowires and rods investigated by nanofocus x-ray diffraction and the finite element method." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/18707.

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In dieser Arbeit wird das lokal aufgelöste Deformationsfeld einzelner (In,Ga)N/GaN Drähte mit Hilfe nanofokussierter Röntgenbeugung und der Methode der Finiten Elemente untersucht. Hiermit soll ein Beitrag zum grundlegenden Verständis der optischen Eigenschaften geleistet werden, die durch das Deformationsfeld maßgeblich beeinflusst werden. Zunächst wird die Abhängigkeit der vertikalen Normalkomponente, epsilon_zz, des elastischen Dehnungstensors von der Geometrie eines axialen (In,Ga)N/GaN Nanodrahtes diskutiert. Dabei wird ein signifikant negativer epsilon_zz-Wert beobachtet, sobald das Verhältnis von Nanodrahtradius und (In,Ga)N-Segmentlänge gegen eins strebt. Auffallend große Scherkomponenten und eine konvexe Verformung der äußeren Oberfläche begleiten das Auftreten des negativen epsilon_zz- Wertes und sind die Ursache dieses Effekts. Durch eine Ummantelung von GaN-Nanodrähten mit einer (In,Ga)N-Schale lässt sich die aktive Fläche und somit die potentielle Lichtausbeute pro Fläche im Vergleich zu planaren Strukturen deutlich erhöhen. Es wurde jedoch festgestellt, dass das entlang der Drahthöhe emittierte Licht rotverschoben ist. Um den Ursprung dieses Phänomens zu beleuchten, wird das lokale Deformationsfeld mit Hilfe nanofokussierter Röntgenbeugung vermessen. Durch die gute räumliche Auflösung ist es möglich, das Deformationsfeld innerhalb einzelner Seitenfacetten zu untersuchen, wobei ein deutlicher Gradient festgestellt wird. Basierend auf dem mit der Methode der Finiten Elemente simulierten Deformationsfeld und kinematischen Streusimulationen, ist es möglich, den Deformationszustand in einen In-Gehalt zu übersetzen. Wenn neben dem Deformationsfeld auch der strukturelle Aufbau in der Simulation berücksichtigt wird, kann der In-Gehalt mit noch größerer Genauigkeit bestimmt werden.
In this thesis, nanofocus x-ray diffraction and the finite element method are applied to analyze the local strain field in (In,Ga)N/GaN nanowires and micro-rods which are discussed as candidates for a plethora of future optoelectronic applications. However, to improve and tailor their properties, a fundamental understanding on the level of individual objects is essential. In this spirit, the dependence of the vertical normal component, epsilon_zz, of the elastic strain tensor on the geometry of an axial (In,Ga)N/GaN nanowire is systematically analyzed using the finite element method. Hereby, it is found that if the ratio of nanowire radius and (In,Ga)N segment length approaches unity, a significantly negative epsilon_zz value is observed. This stands in stark contrast to naive expectations and shows that the common knowledge about planar systems where epsilon_zz would always be greater or equal zero cannot easily be translated to nanowires with an equivalent material sequence. As the origin of this effect significant shear strains are discussed which go along with a convex deformation of the outer surface resulting in a highly complex strain distribution. The increased active area of core-shell (In,Ga)N/GaN micro-rods makes them promising candidates for next-generation light emitting diodes. However, it is found that the emission wavelength is significantly red-shifted along the rod height. To shed light on the origin of this phenomenon, nanofocus x-ray diffraction is applied to analyze the local strain field. Due to the high spatial resolution it is possible to investigate the strain field within individual side-facets and to detect a significant gradient along the rod height. Based on the deformation field simulated using the finite element method and subsequent kinematic scattering simulations it is possible to translate the strain state into an In content.
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Henkel, Thilo Johannes [Verfasser], Henning [Gutachter] Riechert, Thomas [Gutachter] Schröder, and Martin [Gutachter] Schmidbauer. "Strain-related phenomena in (In,Ga)N/GaN nanowires and rods investigated by nanofocus x-ray diffraction and the finite element method / Thilo Johannes Henkel ; Gutachter: Henning Riechert, Thomas Schröder, Martin Schmidbauer." Berlin : Humboldt-Universität zu Berlin, 2018. http://d-nb.info/1185579362/34.

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Henkel, Thilo [Verfasser], Henning [Gutachter] Riechert, Thomas [Gutachter] Schröder, and Martin [Gutachter] Schmidbauer. "Strain-related phenomena in (In,Ga)N/GaN nanowires and rods investigated by nanofocus x-ray diffraction and the finite element method / Thilo Johannes Henkel ; Gutachter: Henning Riechert, Thomas Schröder, Martin Schmidbauer." Berlin : Humboldt-Universität zu Berlin, 2018. http://d-nb.info/1185579362/34.

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Conference papers on the topic "Nanofocused X-Ray diffraction"

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Lidzey, David G. "Mapping structural properties of lead halide perovskites by scanning nanofocus x-ray diffraction (Conference Presentation)." In Organic, Hybrid, and Perovskite Photovoltaics XVIII, edited by Kwanghee Lee, Zakya H. Kafafi, and Paul A. Lane. SPIE, 2017. http://dx.doi.org/10.1117/12.2275741.

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