Dissertations / Theses on the topic 'Nanoelectronics'
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McCaughan, Adam Nykoruk. "Superconducting thin film nanoelectronics." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/101576.
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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.Cataloged from PDF version of thesis.
Includes bibliographical references (pages 163-171).
Superconducting devices have found application in a diverse set of fields due to their unique properties which cannot be reproduced in normal materials. Although many of these devices rely on the properties of bulk superconductors, superconducting devices based on thin films are finding increasing application, especially in the realms of sensing and amplification. With recent advances in electron-beam lithography, superconducting thin films can be patterned into geometries with feature sizes at or below the characteristic length scales of the superconducting state. By patterning 2D geometries with features smaller than these characteristic length scales, we were able to use nanoscale phenomena which occur in thin superconducting films to create superconducting devices which performed useful tasks such as sensor amplification, logical processing, and fluxoid state sensing. In this thesis, I describe the development, characterization, and application of three novel superconducting nanoelectronic devices: the nTron, the yTron, and the current-controlled nanoSQUID. These devices derive their functionality from the exploitation of nanoscale superconducting effects such as kinetic inductance, electrothermal suppression, and current-crowding. Patterning these devices from superconducting thin-films has allowed them to be integrated monolithically with each other and other thin-film superconducting devices such as the superconducting nanowire single-photon detector.
by Adam Nykoruk McCaughan.
Ph. D.
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Echtermeyer, Tim Joachim. "Graphene nanoelectronics and optoelectronics." Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648171.
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Kulmala, Tero Samuli. "Nanowires and graphene nanoelectronics." Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608195.
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Fasoli, Andrea. "Nanowires and nanoribbons nanoelectronics." Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608660.
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Lombardo, Antonio. "Graphene nanoelectronics and optoelectronics." Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648601.
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Conrad, Brad Richard. "Interface effects on nanoelectronics." College Park, Md.: University of Maryland, 2009. http://hdl.handle.net/1903/9154.
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Thesis (Ph. D.) -- University of Maryland, College Park, 2009.Thesis research directed by: Dept. of Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Spagocci, S. "Fault tolerance issues in nanoelectronics." Thesis, University College London (University of London), 2008. http://discovery.ucl.ac.uk/14227/.
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The astonishing success story of microelectronics cannot go on indefinitely. In fact, once devices reach the few-atom scale (nanoelectronics), transient quantum effects are expected to impair their behaviour. Fault tolerant techniques will then be required. The aim of this thesis is to investigate the problem of transient errors in nanoelectronic devices. Transient error rates for a selection of nanoelectronic gates, based upon quantum cellular automata and single electron devices, in which the electrostatic interaction between electrons is used to create Boolean circuits, are estimated. On the bases of such results, various fault tolerant solutions are proposed, for both logic and memory nanochips. As for logic chips, traditional techniques are found to be unsuitable. A new technique, in which the voting approach of triple modular redundancy (TMR) is extended by cascading TMR units composed of nanogate clusters, is proposed and generalised to other voting approaches. For memory chips, an error correcting code approach is found to be suitable. Various codes are considered and a lookup table approach is proposed for encoding and decoding. We are then able to give estimations for the redundancy level to be provided on nanochips, so as to make their mean time between failures acceptable. It is found that, for logic chips, space redundancies up to a few tens are required, if mean times between failures have to be of the order of a few years. Space redundancy can also be traded for time redundancy. As for memory chips, mean times between failures of the order of a few years are found to imply both space and time redundancies of the order of ten.
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Semple, James. "High-throughput large-area plastic nanoelectronics." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/39573.
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Large-area electronics (LAE) manufacturing has been a key focus of both academic and industrial research, especially within the last decade. The growing interest is born out of the possibility of adding attractive properties (flexibility, light weight or minimal thickness) at low cost to well-established technologies, such as photovoltaics, displays, sensors or enabling the realisation of emerging technologies such as wearable devices and the Internet of Things. As such there has been great progress in the development of materials specifically designed to be employed in solution processed (plastic) electronics, including organic, transparent metal oxide and nanoscale semiconductors, as well as progress in the deposition methods of these materials using low-cost high-throughput printing techniques, such as gravure printing, inkjet printing, and roll-to-roll vacuum deposition. Meanwhile, industry innovation driven by Moore's law has pushed conventional silicon-based electronic components to the nanoscale. The processes developed for LAE must strive to reach these dimensions. Given that the complex and expensive patterning techniques employed by the semiconductor industry so far are not compatible with LAE, there is clearly a need to develop large-area high throughput nanofabrication techniques. This thesis presents progress in adhesion lithography (a-Lith), a nanogap electrode fabrication process that can be applied over large areas on arbitrary substrates. A-Lith is a self-alignment process based on the alteration of surface energies of a starting metal electrode which allows the removal of any overlap of a secondary metal electrode. Importantly, it is an inexpensive, scalable and high throughput technique, and, especially if combined with low temperature deposition of the active material, it is fundamentally compatible with large-area fabrication of nanoscale electronic devices on flexible (plastic) substrates. Herein, I present routes towards process optimisation with a focus on gap size reduction and yield maximisation. Asymmetric gaps with sizes below 10 nm and yields of > 90 % for hundreds of electrode pairs generated on a single substrate are demonstrated. These large width electrode nanogaps represent the highest aspect ratio nanogaps (up to 108) fabricated to date. As a next step, arrays of Schottky nanodiodes are fabricated by deposition of a suitable semiconductor from solution into the nanogap structures. Of principal interest is the wide bandgap transparent semiconductor, zinc oxide (ZnO). Lateral ZnO Schottky diodes show outstanding characteristics, with on-off ratios of up to 106 and forward current values up to 10 mA for obtained upon combining a-Lith with low-temperature solution processing. These unique devices are further investigated for application in rectifier circuits, and in particular for potential use in radio frequency identification (RFID) tag technology. The ZnO diodes are found to surpass the 13.56 MHz frequency bernchmark used in commercial applications and approach the ultra-high frequency (UHF) band (hundreds of megahertz), outperforming current state of the art printed diodes. Solution processed fullerene (C60) is also shown to approach the UHF band in this co-planar device configuration, highlighting the viability of a-Lith for enabling large-area flexible radio frequency nanoelectronics. Finally, resistive switching memory device arrays based on a-Lith patterned nanogap aluminium symmetric electrodes are demonstrated for the first time. These devices are based either on empty aluminium nanogap electrodes, or with the gap filled with a solution-processed semiconductor, the latter being ZnO, the semiconducting polymer poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) or carbon nanotube/polyfluorene blends. The switching mechanism, retention time and switching speed are investigated and compared with published data. The fabrication of arrays of these devices illustrates the potential of a-Lith as a simple technique for the realisation of large-area high-density memory applications.
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Hutchinson, G. D. "Superconducting nanoelectronics using controllable Josephson junctions." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604859.
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This dissertation describes the fabrication, measurement and modelling for a micrometer sized direct-current superconducting quantum interference device (DC-SQID), which had its critical current controlled by a process of non-equilibrium phonon (hot-phonon) irradiation from a nanofabricated gated structure. The method of control was achieved via close proximity, normal-metal constrictions that injected hot-phonons on the Dayem bridge Josephson junctions in the DC-SQUID. A hot electron population created these hot-phonons in the control layer’s normal-metal constrictions when a bias current was applied whilst the device was immersed in liquid helium. This hot-phonon injection layer was produced from a multi-layer fabrication technique that allowed for the creation of an in-line structure; a structure fabrication through a reactive-ion etch process performed on a top-down, nano-lithographically defined constriction geometry. The controlled microSQUID device was created using an inner loop size less than a micrometer and contained two Dayem bridge Josephson junctions with a width and length of approximately 100 and 200 nanometres respectively, in a 50 nanometre thick niobium thin-film. The 70 nanometre thick chromium/titanium normal-metal constructions and the weak link Josephson junction were in thermal contact, but in electrical isolation, due to a 30 nanometre silicon dioxide dielectric layer. The device was measured at a temperature of 4.2 degrees Kelvin, and the manipulation of the critical current oscillations of the microSQUID was performed. The critical current control mechanism, utilised in this device, demonstrated a technique where the magnetic hysteresis was eliminated, and the thermal hysteresis in the current-voltage characteristics of the microSQUID was reduced. An observed characteristic of the controlled reduction of the critical current in this device, illustrated by the one-dimensional microSQUID model presented in this dissertation, was the change in the effective length of the Dayem bridge Josephson junctions. This manifested itself through the shortening of the Cooper pair coherence length in the niobium thin-film under the hot-photon irradiation. The experimental data presented in this dissertation, and its interpretation in relation to the microSQUID model, confirms that this technique, based on hot-phonon irradiation for controlling the critical current in Dayem bridge Josephson Junctions, is compatible with the Josephson effect. Therefore, my dissertation shows a feasible method for post-fabrication parameter control in superconducting circuits using Dayem bridge Josephson junctions.
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Tan, Yong-Tsong. "Nanoelectronics using polycrystalline and nanocrystalline silicon." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621321.
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ROTTA, DAVIDE. "Emerging devices and materials for nanoelectronics." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2015. http://hdl.handle.net/10281/76048.
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Questa tesi analizza la possibile implementazione di due tipologie di dispositivi elettronici con funzionalità innovative: dispositivi per la computazione quantistica e transistors a film sottile. Negli ultimi decenni l’industria dei semiconduttori ha portato alla realizzazione di circuiti integrati con milioni di transistors e performance sempre migliori a costi contenuti. Tuttavia, questo processo di miniaturizzazione è giunto a un punto tale che i dispositivi elettronici sono ora composti da pochissimi atomi e ridurne ulteriormente le dimensioni sta diventando sempre più difficile. L’International Technology Roadmap of Semiconductors (ITRS) suggerisce due vie alternative per migliorare le caratteristiche dei dispositivi a partire dalla Front-End-Of-Line. La prima si avvale di nuovi dispositivi sulla base di architetture innovative o dell’utilizzo di diverse variabili di stato (Emerging Research Devices), mentre la seconda punta all’utilizzo di nuovi materiali (Emerging Research Materials).
Questa tesi esamina due possibili candidati in questa ottica: i dispositivi per la computazione quantistica su architettura Complementary Metal-Oxide-Semiconductor (CMOS) e i transistors a film sottile basati su un semiconduttore bidimensionale come il MoS2. Da un lato, l’integrazione della computazione quantistica su Si sfrutterebbe il background tecnologico dell’industria dei semiconduttori per implementare su larga scala un nuovo protocollo di computazione dotato di un potenziale enorme e ancora inesplorato. D’altra parte il di-solfuro di molibdeno (MoS2) è intrinsecamente scalabile, in quanto può essere esfoliato fino allo spessore di un singolo strato atomico. Per questo motivo potrebbe essere un semiconduttore ideale per dispositivi elettronici ultrascalati, così come per applicazioni nella sensoristica, nell’optoelettronica e nell’elettronica flessibile.
Questo lavoro mostra l’attività svolta al Laboratorio MDM-IMM-CNR nell’ambito del corso di dottorato in Nanostrutture e Nanotecnologie all’Università di Milano Bicocca. Lo sviluppo e l’utilizzo di processi di fabbricazione della nanoelettronica, in particolare la litografia a fascio elettronico (EBL), sono stati parte integrante dell’attività sperimentale dedicata alla realizzazione di dispositivi CMOS-compatibili per la computazione quantistica e per l’integrazione di film sottili di MoS2 in strutture Metal-Oxide-Semiconductor Field-Effect-Transistor (MOS FET).
I necessari passi di processo sono stati adeguatamente calibrati e ottimizzati in modo da ottenere dispositivi quantistici basati su Quantum Dots (QD) con dimensioni caratteristiche inferiori a 50 nm. Tali dispositivi sono stati sviluppati con tecnologia Silicon-On-Insulator (SOI), mantenendo così la compatibilità con lo standard della tecnologia CMOS.
Dispositivi a singolo donore e con QD di silicio sono stati poi caratterizzati elettricamente a temperature criogeniche (fino a 300 mK). Impulsando i potenziali di gate in modo controllato, è stato possibile studiare fenomeni di tunneling di singoli elettroni su un donore in alti campi magnetici (8T). In modo analogo è stato dimostrato il controllo dello stato di carica di QDs di Si. In particolare, si è osservato l’insorgere di rumore telegrafico associato al movimento di un singolo elettrone tra due QDs. Infine è stato condotto uno studio di fattibilità per l’integrazione su larga scala di un’architettura di computazione quantistica (il cosiddetto hybrid spin qubit) basata su doppi QDs di Si.
Sul secondo fronte sono stati realizzati dei MOS FETs a film sottile basati su frammenti di MoS2, ottenuti per esfoliazione meccanica e contattati elettricamente tramite litografia EBL. Tali transistors sono poi stati caratterizzati elettricamente, con particolare attenzione alle proprietà di trasporto di carica e alla spettroscopia delle trappole all’interfaccia con l’ossido.This work of thesis explores two emerging research device concepts as possible platforms for novel integrated circuits with unconventional functionalities. Nowadays integrated circuits with advanced performances are available at affordable costs, thanks to the progressive miniaturization of electronic components in the last decades. However, bare geometrical scaling is no more a practical way to improve the device performances and alternative strategies must be considered to achieve an equivalent scaling of the functionalities. The introduction of conceptually new devices and paradigms of information processing (Emerging Research Devices) or new materials with unconventional properties (Emerging Research Materials) are viable approaches, as indicated by the International Technology Roadmap of Semiconductors (ITRS), to enhance the functionalities of integrated circuits at the Front-End-Of-Line. The two options investigated to this respect are silicon devices for quantum computation based on a classical Complementary Metal-Oxide-Semiconductor (CMOS) platform and standard Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) based on MoS2 thin film. In particular, the integration of Quantum Information Processing (QIP) in Si would take advantage of Si-based technology to introduce a completely new paradigm of information processing that has the potential to outperform classical computers in some computational tasks, like prime number factoring and the search in a big database. MoS2, conversely, can be exfoliated up to the single layer thickness. Such intrinsic and extreme scalability makes this material suitable for end-of-roadmap ultrascaled electronic devices as well as for other applications in the fields of sensors, optoelectronics and flexible electronics. This work reports on the experimental activity carried out at Laboratory MDM-IMM-CNR in the framework of the PhD school on Nanostructures and Nanotechnology at Università di Milano Bicocca. Electron Beam Lithography (EBL) and mainstream clean-room processing techniques have been intensively utilized to fabricate CMOS devices for QIP on the one hand and to integrate mechanically exfoliated MoS2 flakes in a conventional FET structure on the other hand. After a careful calibration and optimization of the process parameters, several different Quantum Dot (QD) configurations were designed and fully realized, achieving critical dimensions under 50 nm. Such device architectures were developed on a Silicon-On-Insulator (SOI) platform, in order to eventually access a straightforward integration into the CMOS mainstream technology. Si-QDs and donor-based devices have been then tested by electrical characterization techniques at cryogenic temperatures down to 300 mK. In detail, single electron tunneling events on a donor atom have been controlled by pulsed-gate techniques in high magnetic fields up to 8T, providing a preliminary characterization for the initialization procedure of donor qubits. The control of the charge states of Si-QDs have been also demonstrated by means of stability diagrams as well as the analysis of random telegraph noise arising from single electron tunneling between two QDs. Finally, a feasibility study for the large scale integration of quantum information processing was done based on a double QD hybrid qubit architecture. On the other side, MoS2 thin film transistors have been made by mechanical exfoliation of crystalline MoS2 and electrodes definition by EBL. Electrical characterization was performed on such devices, with a particular focus on the electrical transport in a FET device and on the spectroscopy of interface traps, that turns out to be a limiting factor for the logic operation.
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Rice, John S. "Future satellite technology the role of nanoelectronics." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1998. http://handle.dtic.mil/100.2/ADA355660.
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Thesis (M.S. in Applied Physics) Naval Postgraduate School, September 1998.Thesis advisor(s): James Luscombe, Robert Armstead. "September 1998." Includes bibliographical references (p. 49-51). Also available online.
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Ayhan, Pinar. "Probabilistic CMOS (PCMOS) in the Nanoelectronics Regime." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/19877.
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Motivated by the necessity to consider probabilistic approaches to future designs, the main objective of this thesis was to develop and characterize energy efficient probabilistic CMOS (PCMOS) circuits that can be used to implement low energy computing platforms. The simplest circuit characterized was a PCMOS inverter (switch). An analytical model relating the energy consumption per switching (E) of this switch to its probability of correctness, p was derived. This characterization can also be used to evaluate the energy and performance savings that are achieved by PCMOS switch based computing platforms. The characterization of a PCMOS inverter was also extended to larger circuits whose probabilistic behavior was analyzed by first developing probability models of primitive gates, which were then input to a graph-based model to find the probabilities of larger circuits. The analysis of larger probabilistic circuits provides a basis for analyzing probabilistic behaviors due to noise in future technologies, and can be used in probabilistic design and synthesis methods to improve circuit reliability. Another important design criterion is the speed of a PCMOS circuit. The trade-offs between the energy, speed, and p of PCMOS circuits were also analyzed. Based on this study, various methods were proposed to optimize energy delay product (EDP) and p under given constraints on p, performance, and EDP. The sensitivity of the analysis with respect to variations in temperature, supply voltage, and threshold voltage was also considered.
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Ingram, Ian David Victor. "New materials and processes for flexible nanoelectronics." Thesis, University of Manchester, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.588129.
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Planar electronic devices represent an attractive approach towards roll-to-roll printed electronics without the need for the sequential, precisely aligned, patterning steps inherent in the fabrication of conventional ‘3D’ electronic devices. Self-switching diodes (SSDs) and in-plane-gate field-effect transistors (IPG-FETs) can be patterned using a single process into a substrate precoated with semiconductor.These devices function in depletion mode, requiring the semiconductor to be doped in order for the devices to function. To achieve this, a reliable and controllable method was developed for doping organic semiconducting polymers by the immersion of optimally deposited films in a solution of dopant. The process was shown to apply both semicrystalline and air-stable, amorphous materials indicating that the approach is broadly applicable to a wide range of organic semiconductors.Simultaneously with the development of the doping protocol specialised hot-embossing equipment was designed and constructed and a high-yielding method of patterning the structures of IPG-FETs and SSDs was arrived at. This method allowed for consistent and reliable patterning of features with a minimum line-width of 200nm.Following the development of these doping and patterning processes these were combined to fabricate controllably doped, functioning planar devices. SSDs showed true zero-threshold rectification behaviour with no observed breakdown in the reverse direction up to 100 V. IPG-FETs showed switching behaviour in response to an applied gate potential and were largely free of detectable gate leakage current, verifying the quality of the patterning process.Furthermore, high-performance semiconducting polymer PAAD was synthesised and characterised in field-effect transistors as steps towards its use in planar electronic devices. It was also shown that this material could be doped using the developed immersion doping protocol and that this protocol was compatible with top-gated device architectures and the use of fluoropolymer CYTOP as a dielectric.
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Gaury, Benoit. "Emerging concepts in time-resolved quantum nanoelectronics." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY026/document.
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Grâce aux progrès techniques récents, les sources d'électrons uniques sontpassées de la théorie au laboratoire. Des expériencesconceptuellement nouvelles où l'on sonde directement la dynamique quantiqueinterne des systèmes sont désormais possibles. Dans cette thèse nousdéveloppons les outils analytiques et numériques pour analyser et comprendre cesproblèmes. Les simulations requièrent une résolution spatiale appropriée pourles systèmes, et des temps simulés suffisament longs pour sonder leurs tempscaractéristiques. Jusqu'à présent l'approche théorique standard utilisée pour traiter de tels problèmes numériquement---connue sous les dénominations de formalisme Keldysh ou NEGF (Fonctions de Green Hors Equilibre)---n'a pas été très fructueuse, principalement à cause du coût en temps de calcul prohibitif. Nous proposons une reformulation decette technique sous la forme des fonctions d'onde électroniques du système dansune représentation énergie--temps. Le coût de calcul de notre algorithmenumérique est maintenant linéaire avec le temps simulé et le volume du système,rendant possible la simulation de système contenant $10^5-10^6$ atomes/sites.Nous utilisons cet outil pour proposer de nouveaux effets intrigants ainsi quedes expériences. Nous introduisons la modification dynamique du motifd'interférence d'un système quantique. Nous montrons, par exemple, que la montéed'une tension DC $V$ sur un interféromètre électronique produit un régimetransitoire où le courant oscille comme $cos(eVt/hbar)$. Nous prévoyons unegrande variété d'effets nouveaux lorsque les circuits de nanoélectronique sontsondés très rapidement. Les outils et concepts développés dans cette thèseauront un rôle clé dans l'analyse et les propositions des expériences à venirWith the recent technical progress, single electron sources have moved fromtheory to the lab. Conceptually new types of experiments where one probesdirectly the internal quantum dynamics of the devices are within grasp. In thisthesis we develop the analytical and numerical tools for handling suchsituations. The simulations require appropriate spatial resolution for thesystems, and simulated times long enough so that one can probe their internalcharacteristic times. So far the standard theoretical approach used to treatsuch problems numerically---known as Keldysh or NEGF (Non Equilibrium Green'sFunctions) formalism---has not been very successful mainly because of aprohibitive computational cost. We propose a reformulation of the NEGFtechnique in terms of the electronic wave functions of the system in anenergy--time representation. The numerical algorithm we obtain scales nowlinearly with the simulated time and the volume of the system, and makessimulation of systems with $10^5-10^6$ atoms/sites feasible. We leverage thistool to propose new intriguing effects and experiments. In particular weintroduce the concept of dynamical modification of interference pattern of aquantum system. For instance, we show that when raising a DC voltage $V$ to anelectronic interferometer, the transient current responseoscillates as $cos(eVt/hbar)$. We expect a wealth of new effects whennanoelectronic circuits are probed fast enough. The tools and conceptsdeveloped in this work shall play a key role in the analysis and proposal ofupcoming experiments
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Weston, Joseph. "Numerical methods for time-resolved quantum nanoelectronics." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY040/document.
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De récents progrès dans la nanoélectronique quantique ont donné lieu à denouvelles expériences avec des sources cohérentes d'électrons unique. Lorsqu'undispositif électronique quantique est manipulé sur une échelle de temps pluscourte que le temps de vol caractéristique d'un électron à travers ledispositif, toute une gamme de possibilités qui sont conceptuellement nouvellesdeviennent possible. Pour traiter de telles situations physiques, des avancéescorrespondantes sont nécessaires dans les techniques de simulation, pour aiderà comprendre, ainsi qu'à concevoir, la prochaine génération d'expériences dansce domaine.Les techniques les plus avancées pour simuler ce genre de physique nécessitentun temps de calcul qui croît de linéairement avec la taille dusystème, mais de manière quadratique avec la durée simulée.Ceci est particulièrement problématique pour les cas où un électron restedans le dispositif pendant une durée beaucoup plus longue que le temps devol balistique. Dans cette thèse on propose d'améliorer un algorithmeexistant, basé sur des fonctions d'onde, pour traiter le transport quantiquerésolu en temps dont le temps de calcul croît linéairement avec la taille du système ainsique la durée simulée. Par la suite on exploite cet algorithme pour étudierplusieurs systèmes physiques intéressants. En particulier on trouve quel'application d'un train d'impulsions de tension à un interféromètre à électronspeut stabiliser la modification dynamique du schéma d'interférence.On exploite cet effet pour faire de la spectroscopied'états d'Andreev et de Majorana existant dans des structure hybridessupraconducteur-nanofil.Les algorithmes numériques sont implémentés en tant qu'extension du logicielde transport quantique Kwant. Cette implémentation est utilisée pour tousles résultats numériques présentés dans la thèse, ainsi que d'autres projetsde recherche couvrants une grande gamme de physique: effet Hall quantique,isolants topologiques de Floquet, interféromètres de type Fabry-Pérot, etjonctions supraconductricesRecent technical progress in the field of quantum nanoelectronics have lead toexciting new experiments involving coherent single electron sources.When quantum electronic devices are manipulated on time scales shorterthan the characteristic time of flight of electrons through the device, a wholeclass of conceptually new possibilities become available. In order totreat such physical situations, corresponding advances in numerical techniquesand their software implementation are required both as a tool to aidunderstanding, and also to help when designing the next generation ofexperiments in this domain.Recent advances in numerical methods have lead to techniques for which thecomputation times scales linearly with the system volume, but as thesquare of the simulation time desired. This is particularly problematicfor cases where the characteristic dwell time of electrons in the centraldevice is much longer than the ballistic time of flight. Here, we proposean improvement to an existing wavefunction based algorithm fortreating time-resolved quantum transport which scales linearly in both thesystem volume and desired simulation time. We use this technique tostudy a number of interesting physical cases. In particular we find that theapplication of a train of voltage pulses to an electronic interferometercan be used to stabilise the dynamical modification of the interferencethat was recently proposed. We use this to perform spectroscopy on Majoranaand Andreev resonances in hybrid superconductor-nanowire structures.The numerical algorithms are implemented as an extension to the Kwantquantum transport software. This implementation is used for all the numericalresults presented here, in addition to other work, covering a wide varietyof physical applications: quantum Hall effect, Floquet topological insulators,Fabry-Perot interferometers and superconducting junction
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Rossignol, Benoît. "Time-resolved quantum nanoelectronics in electromagnetic environments." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALY004.
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La nanoélectronique quantique est dans une phase de grande expansion, soutenue principalement par le développement de l'informatique quantique. Une grande précision est nécessaire pour atteindre les objectifs actuels, mais d'un autre côté, les expériences sont aussi plus complexes que jamais. Les outils numériques semblent nécessaires pour réaliser la compréhension exigée tout en traitant une telle complexité. Les échelles de temps concernées sont de plus en plus courtes et se rapprochent des échelles de temps quantiques intrinsèques de l'appareil, comme le temps de vol. Les travaux antérieurs de notre groupe ont simulé le transport d'électrons en fonction du temps à une échelle quantique. Cette thèse vise à améliorer les algorithmes précédents pour obtenir une plus grande précision et une meilleure description des systèmes en incluant l'environnement électronique.Ce travail est divisé en trois domaines principaux. Tout d'abord, nous améliorons les outils de simulation numérique en fonction du temps pour prendre en compte un environnement électronique d'une manière cohérente. Le nouvel algorithme peut atteindre une précision arbitraire d'une manière contrôlée. Deuxièmement, le nouvel algorithme est utilisé pour démontrer l'existence de nouveaux phénomènes physiques. Nous étudions les jonctions Josephson dans différents environnements pour mettre en valeur le rôle des quasi-particules, l'effet d'une impulsion très courte, et pour étudier les techniques de caractérisation de la jonction topologique.Enfin, différents développements sont à l'étude afin d'intégrer le phénomène de décohérence et le bruit quantique dans les simulationsQuantum nanoelectronics is in a phase of great expansion, supported mainlyby the development of quantum computing. A high degree of precision isrequired to achieve current objectives, but on the other hand, the experi-ences are also more complex than ever. Nuremical tools seem necessary toachieve the required understanding while dealing with such complexity. Thetime scales involved are getting shorter and are getting closer to the intrinsicquantum time scales of the device, such as time of flight. Our group’s pre-vious work has simulated time-dependent electron transport on a quantumscale. This thesis aims to improve the previous algorithms to obtain greateraccuracy and a better description of the systems by including the electronicenvironment. This work is divided into three main areas. First, we improveof numerical time-dependent simulation tools to take into account an elec-tronic environment in a self-consistent way. The new algorithm can achievearbitrary accuracy in a controlled way. Second, the new algorithm is used todemonstrate the existence of new physical phenomena. We study Josephsonjunctions in different environments to enhance the role of quasi-particles, theeffect of a very short pulse, and to study topological junction characteriza-tion techniques. Finally, various developments are being studied to integratethe phenomenon of decoherence and quantum noise into the simulations
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Vodenicarevic, Damir. "Rhythms and oscillations : a vision for nanoelectronics." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS518/document.
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Avec l'avènement de l'"intelligence artificielle", les ordinateurs, appareils mobiles et objets connectés sont amenés à dépasser les calculs arithmétiques et logiques pour lesquels ils ont été optimisés durant des décennies, afin d'effectuer des tâches "cognitives" telles que la traduction automatique ou la reconnaissance d'images et de voix, et pour lesquelles ils ne sont pas adaptés. Ainsi, un super-calculateur peut-il consommer des mégawatts pour effectuer des tâches que le cerveau humain traite avec 20 watt. Par conséquent, des système de calcul alternatifs inspirés du cerveau font l'objet de recherches importantes. En particulier, les oscillations neurales semblant être liées à certains traitements de données dans le cerveau ont inspiré des approches détournant la physique complexe des réseaux d'oscillateurs couplés pour effectuer des tâches cognitives efficacement. Cette thèse se fonde sur les avancées récentes en nano-technologies permettant la fabrication de nano-oscillateurs hautement intégrables pour proposer et étudier de nouvelles architectures neuro-inspirées de classification de motifs exploitant la dynamique des oscillateurs couplés et pouvant être implémentées sur puceWith the advent of "artificial intelligence", computers, mobile devices and other connected objects are being pushed beyond the realm of arithmetic and logic operations, for which they have been optimized over decades, in order to process "cognitive" tasks such as automatic translation and image or voice recognition, for which they are not the ideal substrate. As a result, supercomputers may require megawatts to process tasks for which the human brain only needs 20 watt. This has revived interest into the design of alternative computing schemes inspired by the brain. In particular, neural oscillations that appear to be linked to computational activity in the brain have inspired approaches leveraging the complex physics of networks of coupled oscillators in order to process cognitive tasks efficiently. In the light of recent advances in nano-technology allowing the fabrication of highly integrable nano-oscillators, this thesis proposes and studies novel neuro-inspired oscillator-based pattern classification architectures that could be implemented on chip
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Liu, Jia. "Biomimetics through nanoelectronics: development of three-dimensional macroporous nanoelectronics for building smart materials, cyborg tissues and injectable biomedical electronics." Thesis, Harvard University, 2014. http://dissertations.umi.com/gsas.harvard:11510.
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Nanoscale materials enable unique opportunities at the interface between physical and life sciences. The interface between nanoelectronic devices and biological systems makes possible communication between these two diverse systems at the length scale relevant to biological functions. The development of a bottom-up paradigm allows the nanoelectronic units to be synthesized and patterned on unconventional substrates. In this thesis, I will focus on the development of three-dimensional (3D) nanoelectronics, which mimics the structure of porous biomaterials to explore new methods for seamless integration of electronics with other materials, with a special focus on biological tissue.Chemistry and Chemical Biology
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Schukfeh, Muhammed Ihab [Verfasser]. "Semiconducting electrodes for molecular nanoelectronics / Muhammed Ihab Schukfeh." München : Verlag Dr. Hut, 2015. http://d-nb.info/1079768009/34.
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Smith, Michael D. "Estimation of Future Manufacturing Costs for Nanoelectronics Technology." Thesis, Virginia Tech, 1996. http://hdl.handle.net/10919/36515.
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In this report, a future scenario concerning the economic direction of the computing industry has been presented. This future scenario was based on past developments within the computing industry. The continued miniaturization of semiconductor components was discussed based on observed trends for transistors. The physical limitations for transistor devices were also addressed. The use of x-ray lithography for the construction of devices on a 3nano-scale2 was considered. Next, cost trends within the microelectronics industry were explored. Although the cost per transistor has been observed to decrease, total equipment costs and facilities costs were observed to rise.
Trend extrapolation was next used to predict the future cost per transistor and the number of transistors per chip. By taking the product of these two predicted quantities, an equation for the future manufacturing cost per chip was determined. A parametric cost estimation model (VHSIC Model) for the prediction of avionics computer system costs was modified to reflect the future performance parameters of nanoelectronics. Using data from the x86 design of Intel Microprocessor Chips, undetermined parameters of the Modified VHSIC Model were calculated. Next, future performance parameters were used in the model to predict the initial selling price of future chips. The resulting predictions from this model indicated that chip prices are expected to increase while the price per electronic function will decrease. Finally, profit-time models for semiconductor chips and transistors were derived. These models were used to predict the future profit for a chip or transistor.Master of Engineering
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Strudwick, Andrew James. "Developing epitaxial graphene for the purpose of nanoelectronics." Thesis, University of Leeds, 2012. http://etheses.whiterose.ac.uk/2872/.
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Work presented here has been centered around the growth of epitaxial graphene via the thermal decomposition of 4H silicon carbide wafers. Improvements to ultra high vacuum growth procedures used within the research group have been made via the optimization of annealing times and temperatures. The optimization involved the use of surface science techniques such as low energy electron diffraction, atomic force microscopy, low energy electron microscopy and Raman spectroscopy amongst others to monitor changes in surface reconstructions, lateral grain sizes of graphene domains and graphene coverage on the surface as the growth parameters were varied. Improvements observed via the surface science techniques such as increasing the lateral domain grain sizes from 10s nm to 100s nm and increasing the graphene film coverage were linked to the betterment of the electronic properties of the graphene films (electronic measurements carried out by Graham Creeth), this linking lead to published work. The mechanical properties of these films were also measured via the use of Raman spectroscopy to probe the formation of strains within the graphene and compare growth carried out on the silicon carbide (0001) face to literature work carried out on the (0001) face to show evidence of graphene-substrate decoupling within the films grown here, this work also lead to a publication. Alternate growth procedures have also been investigated. This involved carrying out annealing processes in inert argon gas atmospheres. Atomically terraced substrates were produced via annealing in argon gas atmospheres at temperatures of ~1500°C. These terraced substrates where then subsequently graphitised by increasing the annealing temperature to ~1600°C allowing for a single stage substrate preparation and graphitisation process. A result not published elsewhere. A Nanoprobe system has been used to manipulate the graphene films grown under argon atmosphere and make 4-probe electrical transport measurements allowing sheet resistance measurements to be made.
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Tang, Xiao. "Computational investigation of 2D functional materials for nanoelectronics." Thesis, Queensland University of Technology, 2020. https://eprints.qut.edu.au/206075/1/Xiao_Tang_Thesis.pdf.
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This thesis investigated several new 2D functional materials and explored the feasibility for electronic applications. The first part of this thesis mainly focused on the prediction of new 2D materials that hold great promise for field effect transistors and spintronics. The second part systematically studied the possibilities of ferroelectric switching on magnetism tuning and gas sensing. The exploration of novel 2D materials and associated outstanding electronic/magnetic properties provided a deep understanding for the observed phenomena and paved the foundations for high-performance electronics.
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Huang, Jun, and 黃俊. "Efficiency enhancement for nanoelectronic transport simulations." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/196031.
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Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling. It has also been utilized to build novel devices, such as the band-to-band tunneling field-effect transistors (FETs). Therefore, it presages accurate quantum transport simulations, which not only allow quantitative understanding of the device performances but also provide physical insight and guidelines for device optimizations.
However, quantum transport simulations usually require solving repeatedly the Green’s function or the wave function of the whole device region with open boundary treatment, which are computationally cumbersome. Moreover, to overcome the short-channel effects, modern devices usually employ multi-gate structures that are three-dimensional, making the computation very challenging. It is the major target of this thesis to enhance the simulation efficiency by proposing several fast numerical algorithms. The other target is to apply these algorithms to study the physics and performances of some emerging electronic devices.
First, an efficient method is implemented for real space simulations with the effective mass approximation. Based on the wave function approach, asymptotic waveform evaluation combined with a complex frequency hopping algorithm is successfully adopted to characterize electron conduction over a wide energy range. Good accuracy and efficiency are demonstrated by simulating several n-type multi-gate silicon FETs. This technique is valid for arbitrary potential distribution and device geometry, making it a powerful tool for studying n-type silicon nanowire (SiNW) FETs in the presence of charged impurity and surface roughness scattering.
Second, a model order reduction (MOR) method is proposed for multiband simulation of nanowire structures. Employing three- or six-band k.p Hamiltonian, the non-equilibrium Green’s function (NEGF) equations are projected into a much smaller subspace constructed by sampling the Bloch modes of each cross-section layer. Together with special sampling schemes and Krylov subspace methods for solving the eigenmodes, large cross-section p-type SiNW FETs can be simulated. A novel device, junctionless FET, is then investigated. It is found that its doping density, channel orientation, and channel size need to be carefully optimized in order to outperform the classical inversion-mode FET.
With a spurious band elimination process, the MOR method is subsequently extended to the eight-band k.p model, allowing simulation of band-to-band tunneling devices. In particular, tunneling FETs with indium arsenide (InAs) nanowire channel are studied, considering different channel orientations and configurations with source pockets. Results suggest that source pocket has no significant impact on the performances of the nanowire device due to its good electrostatic integrity.
At last, improvements are made for open boundary treatment in atomistic simulations. The trick is to condense the Hamiltonian matrix of the periodic leads before calculating the surface Green’s function. It is very useful for treating leads with long unit cells.published_or_final_version
Electrical and Electronic Engineering
Doctoral
Doctor of Philosophy
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Tung, Chun-Chih. "Synthesis of graphitic materials and its applications in nanoelectronics." Diss., Restricted to subscribing institutions, 2009. http://proquest.umi.com/pqdweb?did=2024769971&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
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Seidel, Ralf. "Methods for the development of a DNA based nanoelectronics." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2003. http://nbn-resolving.de/urn:nbn:de:swb:14-1074596565484-95599.
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The exceptional self-assembly properties of DNA as well as its ability to interact with different kinds of chemical compounds and biological structures make this biomolecule to an interesting object for the fabrication of artificial nanostructures. In this work several methods for a DNA-based self-assembly of electronic nanocircuitry are explored. For this, four basic steps, which turned out to be essential within a circuit assembly process, are addressed: (i) The formation of multi-branched DNA junctions by a simple building-block procedure. (ii) The site-specific attachment of nanoobjects (gold colloids) at the center of DNA junctions. (iii) The integration of DNA into microstructured gold electrode arrays, in particular the stretching of single DNA molecules between two electrodes. For this a simple, but reliable methods for the functionalization of gold electrodes by using aminoethanethiol was developed, which enables end-specific attachment of the DNA but does not require DNA modification. (iv) The metallization of DNA. A synthesis procedure was developed, which results in the formation of continuous chains of 5nm platinum clusters along the DNA. The metal deposition process turned out to take place exclusively at the DNA while background metallization is completely suppressed.
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Jayawardena, Koruwakankanange D. "Pulsed laser synthesis of nanostructures for large area nanoelectronics." Thesis, University of Surrey, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.551149.
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The work discussed in this thesis focuses on synthesis of amorphous carbon and zinc oxide nanostructured for application as electrodes and for gas sensing. The synthesis of nanostructured carbon has been achieved through the ablation of either a pyrolytic graphite target or a pressed carbon/nickel composite target into an Ar atmosphere which is observed to modulate the morphology of the nanostructures. Furthermore, the ablation of the composite target is observed to lead to a non-congruent material transfer with increased Ni content in the deposited nanostructure. The incorporation of Ni combined with graphitisation due to thermal annealing is observed to improve the electrical characteristics of the alloyed nanostructures in comparison to the pure carbon nanostructures. The application of smooth films (both pure and alloyed) as electrodes for diamond-based radiation detectors is discussed. Furthermore, the performance of thermally annealed highly cluster assembled carbon films for NH3, N02 and humidity sensing is also discussed. The use of excimer lasers in order to affect the reaction rate and control of size and shape distribution of ZnO nanocrystals grown in liquid phase has been studied in relation to the laser fluence and processing duration for a fixed repetition rate and bath temperature. A growth window for laser fluence is observed where morphology controlled nanocrystals can be prepared through a photothermal breakdown process. The use of size (distribution) controlled nanocrystals for thin film transistors is discussed. In addition to its application as a material for transistors, the use of thin film nanocrystals for humidity and N02 sensing is also discussed. While high performance is observed for humidity sensing, the films do not show a repeatable performance upon exposure to N02, which is attributed to the poor desorption of the adsorbed analyte. Finally, the use of the above nanocrystals as a seed particle for hydrothermal growth of ZnO multipods is discussed together with its use for UV and vapour sensing.
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Huang, Jun. "Controlled Growth of Carbon Nanotubes for High Performance Nanoelectronics." FIU Digital Commons, 2009. http://digitalcommons.fiu.edu/etd/282.
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Unique electrical and mechanical properties of single-walled carbon nanotubes (SWNTs) have made them one of the most promising candidates for next-generation nanoelectronics. Efficient utilization of the exceptional properties of SWNTs requires controlling their growth direction (e.g., vertical, horizontal) and morphologies (e.g., straight, junction, coiled). In this dissertation, the catalytic effect on the branching of SWNTs, Y-shaped SWNTs (Y-SWNTs), was investigated. The formation of Y-shaped branches was found to be dependent on the composition of the catalysts. Easier carbide formers have a strong tendency to attach to the sidewall of SWNTs and thus enhance the degree of branching. Y-SWNTs based field-effect transistors (FETs) were fabricated and modulated by the metallic branch of the Y-SWNTs, exhibiting ambipolar characteristics at room temperature. A subthreshold swing of 700 mV/decade and an on/off ratio of 105 with a low off-state current of 10-13 A were obtained. The transport phenomena associated with Y- and cross-junction configurations reveals that the conduction mechanism in the SWNT junctions is governed by thermionic emission at T > 100 K and by tunneling at T < 100 K. Furthermore, horizontally aligned SWNTs were synthesized by the controlled modification of external fields and forces. High performance carbon nanotube FETs and logic circuit were demonstrated utilizing the aligned SWNTs. It is found that the hysteresis in CNTFETs can be eliminated by removing absorbed water molecules on the CNT/SiO2 interface by vacuum annealing, hydrophobic surface treatment, and surface passivation. SWNT “serpentines” were synthesized by utilization of the interaction between drag force from gas flow and Van der Waals force with substrates. The curvature of bent SWNTs could be tailored by adjusting the gas flow rate, and changing the gas flow direction with respect to the step-edges on a single-crystal quartz substrate. Resistivity of bent SWNTs was observed to increase with curvature, which can be attributed to local deformations and possible chirality shift at curved part. Our results show the successful synthesis of SWNTs having controllable morphologies and directionality. The capability of tailoring the electrical properties of SWNTs makes it possible to build an all-nanotube device by integrating SWNTs, having different functionalities, into complex circuits.
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Yang, Ronggui Ph D. Massachusetts Institute of Technology. "Nanoscale heat conduction with applications in nanoelectronics and thermoelectrics." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/35620.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2006.Includes bibliographical references.
When the device or structure characteristic length scales are comparable to the mean free path and wavelength of energy carriers (electrons, photons, phonons, and molecules) or the time of interest is on the same order as the carrier relaxation time, conventional heat transfer theory is no longer valid. Tremendous progress has been made in the past two decades to understand and characterize heat transfer in nanostructures. However most work in the last decade has focused on heat transfer in simple nanostructures, such as thin films, superlattices and nanowires. In reality, there is a demand to study transport process in complex nanostructures for engineering applications, such as heat transfer in nanoelectronic devices and the thermal conductivity in nanocomposites which consists of nanowires or nanoparticles embedded in a matrix material. Another class of problems which are rich in physics and might be explored for better design of both nanoelectronic devices and energy conversion materials and devices are coupled electron and phonon transport. Experimentally, most past work has been focused on thermal conductivity characterization of various nanostructures and very little has been done on the fundamental transport properties of energy carriers.
(cont.) This thesis work contributes to the following aspects of heat transfer, nanoelectronics, and thermoelectrics. 1) Simulation tools are developed for transient phonon transport in multidimensional nanostructures and used to predict the size effect on the temperature rise surrounding a nanoscale heat source, which mimics the heating issue in nano-MOSFETs. 2) Semiconductor nanocomposites are proposed for highly efficient thermoelectric materials development where low thermal conductivity is a blessing for efficiency enhancement. Both the deterministic solution and Monte Carlo simulation of the phonon Boltzmann equation are established to study the size effect on the thermal conductivity of nanocomposites where nanoparticles and nanowires are embedded in a host material. 3) Explored the possibility of creating nonequilibrium conditions between electrons and phonons in thermoelectric materials using high energy flux coupling to electrons through surface plasmons, and thus to develop highly efficient thermoelectric devices.
(cont.) 4) Established a sub-pico second optical pump-probe measurement system where a femtosecond laser is employed and explored the possibility of extracting phonon reflectivity at interfaces and the phonon relaxation time in a material, which are the two most fundamental phonon properties for nanoscale energy transport from the pump-probe measurements.
by Ronggui Yang.
Ph.D.
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Veliev, Farida. "Interfacing neurons with nanoelectronics : from silicon nanowires to carbon devices." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAI001/document.
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Dans la lignée des progrès technologiques récents en électronique, ces dernières décennies ont vu l’émergence d’une variété de systèmes permettant l’interface bioélectronique, allant de la mesure de l’activité électrique émise par l’ensemble du cerveau jusqu’à la mesure du signal émis par un neurone unique. Bien que des interfaces électroniques avec les neurones ont montré leur utilité pour des applications cliniques et sont communément utilisés par les neurosciences fondamentales, leurs performances sont encore très limitées, notamment en raison de l’incompatibilité relative entre les systèmes à l’état solide et le vivant. Dans ce travail de thèse, nous avons étudié des techniques et des matériaux nouveaux permettant une approche alternative et qui pourraient améliorer le suivi de l’activité de réseaux de neurones cultivés in situ et à terme la performance des neuroprothèses in vivo. Dans ce travail, des réseaux de nanofils de silicium et des microélectrodes en diamant sont élaborés pour respectivement améliorer la résolution spatiale et la stabilité des électrodes dans un environnement biologique. Un point important de cette thèse est également l’évaluation des performances de transistors à effet de champ en graphène pour la bio électronique. En raison des performances remarquables et combinées sur les aspects électrique, mécanique et chimique du graphène, ce matériau apparaît comme un candidat très prometteur pour la réalisation d’une électronique permettant une interface stable et sensible avec un réseau de neurones. Nous montrons dans ce travail l’affinité exceptionnelle des neurones avec une surface de graphène brut et la réalisation d’une électronique de détection rapide et sensible à base de transistor en graphèneIn line with the technological progress of last decades a variety of adapted bioelectrical interfaces was developed to record electrical activity from the nervous system reaching from whole brain activity to single neuron signaling. Although neural interfaces have reached clinical utility and are commonly used in fundamental neuroscience, their performance is still limited. In this work we investigated alternative materials and techniques, which could improve the monitoring of neuronal activity of cultured networks, and the long-term performance of prospective neuroprosthetics. While silicon nanowire transistor arrays and diamond based microelectrodes are proposed for improving the spatial resolution and the electrode stability in biological environment respectively, the main focus of this thesis is set on the evaluation of graphene based field effect transistor arrays for bioelectronics. Due to its outstanding electrical, mechanical and chemical properties graphene appears as a promising candidate for the realization of chemically stable flexible electronics required for long-term neural interfacing. Here we demonstrate the outstanding neural affinity of pristine graphene and the realization of highly sensitive fast graphene transistors for neural interfaces
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Husain, Muhammad Khaled. "Electrodeposited Ni/Ge and germanide Schottky barriers for nanoelectronics applications." Thesis, University of Southampton, 2009. https://eprints.soton.ac.uk/69056/.
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In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy metallisation technique offers numerous advantages over the physical vapour deposition techniques. Electrical characteristics of the grown diodes show a high quality rectifying behaviour with extremely low leakage currents even on highly doped Ge. A non-Arrhenius behaviour of the temperature dependence is observed for the grown Ni/Ge diodes on lowly doped Ge that is explained by a spatial variation of the barrier heights. The inhomogeneity of the barrier hights is explained in line with an intrinsic surface states model for Ge. The understanding of the intrinsic surface states will help to create ohmic contacts for doped n-MOSFETs. NiGe were formed single phase by annealing. Results reveal that by using these high-quality germanide Schottky barriers as the source/drain, the subthreshold leakage currents of a Schottky barrier MOSFET could be minimised, in particular, due to the very low drain/body junction leakage current exhibited by the electrodeposited diodes. The Ni/Ge diodes on highly doped Ge show negative differential conductance at low temperature. This effect is attributed to the intervalley electron transfer in Ge conduction band to a low mobility valley. The results show experimentally that Schottky junctions could be used for hot electron injection in transferred-electron devices. A vertical Co/Ni/Si structure has been fabricated for spin injection and detection in Si. It is shown that the system functions electrically well although no magnetoresistance indicative of spin injection was observed.
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Лопаткін, Юрій Михайлович, Юрий Михайлович Лопаткин, Yurii Mykhailovych Lopatkin, Оксана Анатоліївна Шовкопляс, Оксана Анатольевна Шовкопляс, Oksana Anatoliivna Shovkoplias, and P. O. Kondratenko. "Biphenyl Molecules as Elements of Nanoelectronics in the Electric Field." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35480.
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This paper presents the results of investigations of the influence of the longitudinal and transverse
electric field on the potential surface, the dipole moment and electronic spectra of the substituted biphenyl
molecules that are offered for the role of the elements of nanoelectronics.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35480
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Öktem, Gözde. "Oligo(3-hexylthiophene) Wires for needs of Single-Molecule Nanoelectronics." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-227736.
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A material to function as a molecular electronic device should have a strong coupling with electrodes through appropriate and well-defined anchoring groups and have to support an effective traveling of charges via a conjugated molecular backbone. Oligo(3-hexylthiophene)s are π-conjugated molecules having large applicability in several areas of organic electronics owing interesting semiconducting properties and they also hold great promises in the field of single-molecule electronics. Polymerization methods, in principle, allow construction of long conjugated systems in a single synthetic step, however, most of them lack precision. This work uses externally initiated chain-growth Kumada Catalyst - Transfer Polycondensation (KCTP) for the synthesis of semiconductive oligo(3-hexylthiophene) wires with controllable molecular weights, low polydispersities, high regioregularities as well as with well-defined starting and end groups. In such a way, the synthetic efforts were compromised to obtain relatively easy a series of very complex molecular wires with a reasonable structural precision. To modulate the electronic function of oligomer backbones, specific charge-transfer moieties (DMA-TCBD and Fc-TCBD) were inserted as side chains or end groups. In-situ termination of KCTP with ZnCl-functionalized electron rich alkynes followed by Diederich-type click reaction resulted in the synthesis of asymmetrical oligo(3-hexylthiophene)s having thiolate-functionalized starting groups and donor-functionalized end-groups with a high degree of end-group functionalizations. Side chains of double-thiolate functionalized oligo(3-hexylthiophene)s, on the other hand, were further modified with the insertion of charge-transfer groups by post-polymerization functionalization. While the facile synthesis and modification of oligo(3-hexylthiophene)s enable the control over the molecular backbone, the specific starting and end anchoring groups allow the control over the electrode oligomer interface. To assure the formation of alligator clips between oligomer backbone and Au electrode, the optimizations including proper end-group conversion into mild counterparts followed by in-situ deprotection into thiolates and the binding abilities on gold were investigated. Finally, the conductance of bis-end functionalized oligo(3-hexylthiophene)s was preliminarily studied through oligomer backbone by Mechanically Controllable Break Junctions (MCBJs) setup and through oligomer-attached DNA origami-templated gold nanowires by individual electrical contacts. The developed KCTP-based synthetic route, at the end, presents new opportunities for the facile synthesis, the ease of modification and the feasibility of asymmetrical and side chain functionalized oligo(3-hexylthiophene) wires for needs of molecular electronics.
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Наталич, В. В. "Определение пересыщения при получении конденсатов никеля." Thesis, Издательство СумГУ, 2012. http://essuir.sumdu.edu.ua/handle/123456789/27611.
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Sachs, Burkhard [Verfasser], and Alexander [Akademischer Betreuer] Lichtenstein. "Two-Dimensional Crystals for Novel Nanoelectronics / Burkhard Sachs. Betreuer: Alexander Lichtenstein." Hamburg : Staats- und Universitätsbibliothek Hamburg, 2014. http://d-nb.info/1055040528/34.
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Karlewski, Christian [Verfasser], and G. [Akademischer Betreuer] Schön. "Quantum Master Equation Approach to Nanoelectronics / Christian Karlewski. Betreuer: G. Schön." Karlsruhe : KIT-Bibliothek, 2016. http://d-nb.info/1102250252/34.
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De, Los Santos Valladares Luis. "Study of thin metal films and oxide materials for nanoelectronics applications." Thesis, University of Cambridge, 2012. https://www.repository.cam.ac.uk/handle/1810/244598.
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Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide flakes. The crystallization and surface morphology of gold and copper films on SiO2/Si substrates is investigated as a function of annealing temperature. Annealing arranges the Au crystallites in the [111] direction and changes the morphology of the surface. Relaxation of the Au layer at high temperatures is responsible for the initial stages of cluster formation. These may form at disordered points on the surface and become islands when the temperature is increased. In the case of Cu/SiO2/Si films, oxides are formed after thermal oxidation at different temperatures up to 1000 °C. The phase evolution Cu -> Cu + Cu2O -> Cu2O -> Cu2O + CuO -> CuO is detected. Pure Cu2O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects are obtained in the temperature range 300 - 550 °C. A resistivity phase diagram, which is obtained from the current-voltage response of the copper oxides, is presented. In the case of thin nickel films, the necessary reagents, conditions and processes required to obtain nano and atomic gaps between soft and clean nickel electrodes are described by using a conventional electrochemical cell. Current-voltage characteristics are also presented to evaluate possible applications of the nanogap electrodes in electronic nanodevices. In addition to the metal surfaces, oxides materials such as the superconductor LaCaBaCu3O7 (La1113), carboxyl ferromagnetic microparticles and graphene oxide flakes are studied. La1113 is a high critical temperature superconductor with TC(onset) = 80 K and its structure is similar to the tetragonal YBCO. This thesis explores the attachment of La1113 nanograins on Au(111) surfaces through selfassembled monolayers of HS-C8H16-HS [octane (di)thiol] for their potential application in nanotransistors. It is found that La1113 particles (100 nm mean diameter) can be functionalized by octane (di)thiol without affecting their superconducting critical temperature (TC = 80 K). A design for a superconducting transistor fabricated by immobilized La1113 nanograins in between two gold electrodes which could be controlled by an external magnetic field gate is suggested. Furthermore, the mechanical reorientation of thiolated ferromagnetic microspheres bridging a pair of gold electrodes under an external magnetic field is studied. Finally, a flexible film made of graphene oxide flakes is prepared and characterized by X ray diffraction. It is achieved by the chemical oxidation of commercial graphite and the subsequent reaction with NaOH. It is found that the interlayer distance between graphene increases upon oxidation due to the formation of chemical groups and results in the delamination and flexibility of the flakes.
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Sharma, Richa Ph D. Massachusetts Institute of Technology. "Physical and chemical manipulation of carbon nanotubes and graphene for nanoelectronics." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/62734.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, February 2011.Cataloged from PDF version of thesis.
Includes bibliographical references (p. 140-150).
The electron confinement in carbon nanomaterials provides them with many interesting electronic, mechanical and optical properties, thus making them one of the best suited materials for electronic and sensor applications. However, at present practical realization of nano-scale electronics faces two major challenges: their assembly into functional electronic circuits, and precise engineering of these building blocks. New methods of physical and chemical manipulation are needed to address these challenges. The work presented in this thesis aims to understand and design physical and chemical manipulation methods for carbon nanostructures. More specifically, this thesis is concerned with two main topics on manipulation of carbon nanomaterials: First, the problem of the top-down, parallel placement of anisotropic nanoparticles and secondly, chemical manipulation via controlled chemical functionalization. Physical manipulation of nanostructures has been achieved by designing a method for creating high aspect ratio cylindrical droplets with nano-to-micro scale diameters on a wafer by engineering the substrate surface chemistry, liquid surface tension and liquid film thickness. The substrate surface is manipulated by chemisorption of monolayers of hydrophobic and hydrophilic molecules in form of alternating rectangular strips. The cylindrical droplets selectively form on the hydrophilic strips. The hydrodynamic flow patterns that evolve within the droplets during evaporation are able to orient and position the entrained carbon nanotubes with parallel alignment with nanometer precision. With respect to chemical manipulation, this thesis work focuses on graphene and graphene nanoribbons (GNR). In this work first detailed structure-reactivity relationships for electron-transfer chemistries of graphene and GNR are developed. For GNR, these relationships demonstrate the dependence of the ribbon reactivity on width and orientation of carbon atoms along the edges. Large variations in reactivity are predicted for ribbons of different widths and family type suggesting selective chemistries may be developed to sort or preferentially modify the GNRs. For graphene these structure reactivity relationships include regio-selective chemistry and reactivity dependence on the number of graphene layers on chip. This work demonstrates high reactivity of graphene edges and reports a spectroscopic method to analyze the edge reactivity. This study should aid studies to control the disordered edge structure of GNR by edge selective chemical functionalization and chemically modify graphene depending on the number of layers stacked. The electron transfer chemistries developed in this work have also been used to understand the role of covalent defects on graphene electron conduction. This work may be used in future to assemble graphene sheets in three dimensions to fabricate supermolecular structures (i.e. graphene super lattices).
by Richa Sharma.
Ph.D.
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Mouafo, Notemgnou Louis Donald. "Two dimensional materials, nanoparticles and their heterostructures for nanoelectronics and spintronics." Thesis, Strasbourg, 2019. http://www.theses.fr/2019STRAE002/document.
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Cette thèse porte sur l’étude du transport de charge et de spin dans les nanostructures 0D, 2D et les hétérostructures 2D-0D de Van der Waals (h-VdW). Les nanocristaux pérovskite de La0.67Sr0.33MnO3 ont révélé des magnétorésistances (MR) exceptionnelles à basse température résultant de l’aimantation de leur coquille indépendamment du coeur ferromagnétique. Les transistors à effet de champ à base de MoSe2 ont permis d’élucider les mécanismes d’injection de charge à l’interface metal/semiconducteur 2D. Une méthode de fabrication des h-VdW adaptés à l’électronique à un électron est rapportée et basée sur la croissance d’amas d’Al auto-organisés à la surface du graphene et du MoS2. La transparence des matériaux 2D au champ électrique permet de moduler efficacement l’état électrique des amas par la tension de grille arrière donnant lieu aux fonctionnalités de logique à un électron. Les dispositifs à base de graphene présentent des MR attribuées aux effets magnéto-Coulomb anisotropiquesThis thesis investigates the charge and spin transport processes in 0D, 2D nanostructures and 2D-0D Van der Waals heterostructures (VdWh). The La0.67Sr0.33MnO3 perovskite nanocrystals reveal exceptional magnetoresistances (MR) at low temperature driven by their paramagnetic shell magnetization independently of their ferromagnetic core. A detailed study of MoSe2 field effect transistors enables to elucidate a complete map of the charge injection mechanisms at the metal/MoSe2 interface. An alternative approach is reported for fabricating 2D-0D VdWh suitable for single electron electronics involving the growth of self-assembled Al nanoclusters over the graphene and MoS2 surfaces. The transparency the 2D materials to the vertical electric field enables efficient modulation of the electric state of the supported Al clusters resulting to single electron logic functionalities. The devices consisting of graphene exhibit MR attributed to the magneto-Coulomb effect
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Carapezzi, Stefania <1970>. "Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2014. http://amsdottorato.unibo.it/6222/1/carapezzi_stefania_tesi.pdf.
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Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that of current microelectronic devices if new challenges will be faced. This thesis primarily focuses on two different, cutting-edge aspects of research over semiconductor NW arrays as pivotal components of NW-based devices.
The first part deals with the characterization of electrically active defects in NWs. It has been elaborated the set-up of a general procedure which enables to employ Deep Level Transient Spectroscopy (DLTS) to probe NW arrays’ defects. This procedure has been applied to perform the characterization of a specific system, i.e. Reactive Ion Etched (RIE) silicon NW arrays-based Schottky barrier diodes. This study has allowed to shed light over how and if growth conditions introduce defects in RIE processed silicon NWs.
The second part of this thesis concerns the bowing induced by electron beam and the subsequent clustering of gallium arsenide NWs. After a justified rejection of the mechanisms previously reported in literature, an original interpretation of the electron beam induced bending has been illustrated. Moreover, this thesis has successfully interpreted the formation of NW clusters in the framework of the lateral collapse of fibrillar structures. These latter are both idealized models and actual artificial structures used to study and to mimic the adhesion properties of natural surfaces in lizards and insects (Gecko effect). Our conclusion are that mechanical and surface properties of the NWs, together with the geometry of the NW arrays, play a key role in their post-growth alignment. The same parameters open, then, to the benign possibility of locally engineering NW arrays in micro- and macro-templates.
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Carapezzi, Stefania <1970>. "Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2014. http://amsdottorato.unibo.it/6222/.
Full textAbstract:
Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that of current microelectronic devices if new challenges will be faced. This thesis primarily focuses on two different, cutting-edge aspects of research over semiconductor NW arrays as pivotal components of NW-based devices.
The first part deals with the characterization of electrically active defects in NWs. It has been elaborated the set-up of a general procedure which enables to employ Deep Level Transient Spectroscopy (DLTS) to probe NW arrays’ defects. This procedure has been applied to perform the characterization of a specific system, i.e. Reactive Ion Etched (RIE) silicon NW arrays-based Schottky barrier diodes. This study has allowed to shed light over how and if growth conditions introduce defects in RIE processed silicon NWs.
The second part of this thesis concerns the bowing induced by electron beam and the subsequent clustering of gallium arsenide NWs. After a justified rejection of the mechanisms previously reported in literature, an original interpretation of the electron beam induced bending has been illustrated. Moreover, this thesis has successfully interpreted the formation of NW clusters in the framework of the lateral collapse of fibrillar structures. These latter are both idealized models and actual artificial structures used to study and to mimic the adhesion properties of natural surfaces in lizards and insects (Gecko effect). Our conclusion are that mechanical and surface properties of the NWs, together with the geometry of the NW arrays, play a key role in their post-growth alignment. The same parameters open, then, to the benign possibility of locally engineering NW arrays in micro- and macro-templates.
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Hamedi, Mahiar. "Organic electronics on micro and nano fibers : from e-textiles to biomolecular nanoelectronics." Doctoral thesis, Linköpings universitet, Biomolekylär och Organisk Elektronik, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17661.
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Research in the field of conjugated polymers (CPs) has led to the emergence of a number of interesting research areas and commercial applications, including solar cells, flexible displays, printed electronics, biosensors, e-textiles and more. Some of the advantages of organic electronics materials, as compared to their inorganic counterparts, include high elasticity, and mechanical flexibility, which allows for a natural integration of CPs into fabrics, making them ideal for e-texile. In this thesis, a novel approach for creating transistors is presented, through the construction of electrolyte gated transistors, directly embedded on functional textile fibers. Furthermore theoretical and experimental results of the integration of functional woven devices based on these transistors are shown. The realization of woven digital logic and design schemes for devices that can be placed inside living tissue, for applications such as neural communication, are demonstrated. Reducing feature sizes in organic electronics is necessity just as in conventional microelectronics, where Moore's law has been the most impressive demonstration of this over the past decades. Here the scheme of self-assembly (SA) of biomolecular/CP hybrid nano-structures is used for creating nano electronics. It is demonstrated that proteins in the form of amyloid fibrils can be coated with the highly conducting polythiophene derivative (PEDOT-S) through molecular self-assembly in water, to form conducting nanowire networks and nanodevices at molecular dimensions. In a second SA scheme, large area patterning of connected micro-nano lines and nano transistors from the conducting polymer PEDOT-S is demonstrated through assembly of these from fluids using soft lithography. Thereby the problems of large area nano patterning, and nano registration are solved for organic electronics. The construction of functional nanoscopic materials and components through molecular self-assembly has the potential to deliver totally new concepts, and may eventually allow cheap mass production of complex three dimensional nano electronic materials and devices.
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Palmer, James Matthew. "Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/54293.
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For graphene to be a viable platform for nanoscale devices, high quality growth and structures are necessary. This means structuring the SiC surface to prevent graphene from having to be patterned using standard microelectronic processes. Presented in this thesis are new processes aimed at improving the graphene as well as devices based on high quality graphene nanoribbons. Amorphous carbon (aC) corrals deposited prior to graphene growth are demonstrated to control SiC step-flow. SiC steps are shown to be aligned by the presence of the corrals and can increase SiC terrace widths. aC contacts deposited and crystallized during graphene growth are shown as a way to contact graphene without metal lift-off. Observation of the Quantum Hall Effect demonstrates the high quality of the graphene grown alongside the nanocrystalline graphite contacts. Continuing the ballistic transport measurements on sidewall graphene nanoribbons, the invasive probe effect is observed using an atomic force microscope (AFM) based technique that spatially maps the invasive probe effect. Cleaning experiments demonstrate the role of scattering due to resist residues and environmental adsorbates on graphene nanoribbons. Finally, switches based on junctions formed in the graphene nanoribbons are shown as a route toward graphene based devices.
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Withey, Gary D. "Highly integrated and efficient enzyme-carbon nanotube bio-nanoelectronics via DNA programmable assembly." View abstract/electronic edition; access limited to Brown University users, 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3318371.
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Білоус, Олена Анатоліївна, Елена Анатольевна Белоус, Olena Anatoliivna Bilous, and О. В. Гула. "Гвинтова структура одношарових нанотубуленів." Thesis, Cумський державний університет, 2016. http://essuir.sumdu.edu.ua/handle/123456789/46547.
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Нанотубулени відносяться до класу нових матеріалів, що мають унікальні електричні, оптичні та механічні властивості. Широкий спектр можливостей застосування дозволяє розглядати такі структури як найбільш перспективні об‘єкти наноелектроніки.
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Kruglyak, Yu A. "Non-Equilibrium Green’s Function Method in Matrix Representation and Model Transport Problems of Nanoelectronics." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35352.
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Non-equilibrium Green’s functions method in matrix representation is presented and applied to model transport problems for 1D and 2D conductors using a nearest neighbor orthogonal tight-binding model in the frame of the «bottom-up» approach of modern nanoelectronics. Simple methods to account for electric contacts in Schrödinger equation to solve quantum electron transport problems are given.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35352
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Xin, Huijun. "DNA-Templated Surface Alignment and Characterization of Carbon Nanotubes." Diss., CLICK HERE for online access, 2006. http://contentdm.lib.byu.edu/ETD/image/etd1394.pdf.
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Hankinson, John H. "Spin dependent current injection into epitaxial graphene nanoribbons." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53884.
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Over the past decade there has been a great deal of interest in graphene, a 2-dimensional allotrope of carbon with exceptional mechanical and electrical properties. Its outstanding mobility, minimal size, and mechanical stability make it an appealing material for use in next generation electronic devices. Epitaxial graphene growth on silicon carbide is a reliable, scalable method for the production of high quality graphene films. Recent work has shown that the SiC can be patterned prior to graphitization, in order to selectively grow graphene nanostructures. Graphene nanoribbons grown using this technique do not suffer from the rough edges caused by lithographic patterning, and recent measurements have revealed extraordinary transport properties. In this thesis the magnetic properties of these nanoribbons are investigated through spin polarized current injection. The sensitivity of these nanoribbons to spin polarized current is interesting from a fundamental physics standpoint, and may find applications in future spintronic devices.
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Стеценко, М. О., Ю. А. Пасічник, and В. В. Кідалов. "Моделювання спектрів відбивання нітридами на підкладках." Thesis, Видавництво СумДУ, 2012. http://essuir.sumdu.edu.ua/handle/123456789/27609.
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Опанасюк, Надія Миколаївна, Надежда Николаевна Опанасюк, Nadiia Mykolaivna Opanasiuk, and А. В. Ярмак. "Молибденит - новая альтернатива кремния и графена в микро-и наноэлектронике." Thesis, Издательство СумГУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/14048.
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