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Journal articles on the topic 'Nanoelectronic'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 March 2023

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1

HULL, ROBERT, RICHARD MARTEL, and J. M. XU. "NANOELECTRONICS: SOME CURRENT ASPECTS AND PROSPECTS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 353–64. http://dx.doi.org/10.1142/s0129156402001174.

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A brief summary is provided of selected current activities in the field of nanoelectronics, which is taken here to mean the fabrication and integration of active microelectronic components with feature dimensions of tens of nanometers or less. Particular emphasis is placed upon the classes of nanoelectronic devices that were discussed at the 2002 WOFE Conference.

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2

Snider, G., P. Kuekes, T. Hogg, and R. Stanley Williams. "Nanoelectronic architectures." Applied Physics A 80, no. 6 (March 2005): 1183–95. http://dx.doi.org/10.1007/s00339-004-3154-4.

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3

Csurgay, Árpád I., and Wolfgang Porod. "Nanoelectronic Circuits." International Journal of Circuit Theory and Applications 38, no. 9 (September 15, 2010): 881–82. http://dx.doi.org/10.1002/cta.727.

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4

Melnyk, Oleksandr, and Viktoriia Kozarevych. "SIMULATION OF PROGRAMMABLE SINGLE-ELECTRON NANOCIRCUITS." Bulletin of the National Technical University "KhPI". Series: Mathematical modeling in engineering and technologies, no. 1 (March 5, 2021): 64–68. http://dx.doi.org/10.20998/2222-0631.2020.01.05.

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The speed and specializations of large-scale integrated circuits always contradict their versatility, which expands their range and causes the rise in price of electronic devices. It is possible to eliminate the contradictions between universality and specialization by developing programmable nanoelectronic devices, the algorithms of which are changed at the request of computer hardware developers, i.e. by creating arithmetic circuits with programmable characteristics. The development of issues of theory and practice of the majority principle is now an urgent problem, since the nanoelectronic execution of computer systems with programmable structures will significantly reduce their cost and significantly simplify the design stage of automated systems. Today there is an important problem of developing principles for building reliable computer equipment. The use of mathematical and circuit modeling along with computer-aided design systems (CAD) can significantly increase the reliability of the designed devices. The authors prove the advantages of creating programmable nanodevices to overcome the physical limitations of micro-rominiatization. This continuity contributes to the accelerated introduction of mathematical modeling based on programmable nanoelectronics devices. The simulation and computer-aided design of reliable programmable nanoelectronic devices based on the technology of quantum automata is described. While constructing single-electron nanocircuits of combinational and sequential types the theory of majority logic is used. The order of construction and programming of various types of arithmetic-logic units is analyzed.

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5

Sha, Junjiang, Chong Xu, and Ke Xu. "Progress of Research on the Application of Nanoelectronic Smelling in the Field of Food." Micromachines 13, no. 5 (May 18, 2022): 789. http://dx.doi.org/10.3390/mi13050789.

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In the past 20 years, the development of an artificial olfactory system has made great progress and improvements. In recent years, as a new type of sensor, nanoelectronic smelling has been widely used in the food and drug industry because of its advantages of accurate sensitivity and good selectivity. This paper reviews the latest applications and progress of nanoelectronic smelling in animal-, plant-, and microbial-based foods. This includes an analysis of the status of nanoelectronic smelling in animal-based foods, an analysis of its harmful composition in plant-based foods, and an analysis of the microorganism quantity in microbial-based foods. We also conduct a flavor component analysis and an assessment of the advantages of nanoelectronic smelling. On this basis, the principles and structures of nanoelectronic smelling are also analyzed. Finally, the limitations and challenges of nanoelectronic smelling are summarized, and the future development of nanoelectronic smelling is proposed.

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6

Wang, Yanfeng, Haoping Ji, and Junwei Sun. "Design and Control for Four-Variable Chaotic Nanoelectronic Circuits Based on DNA Reaction Networks." Journal of Nanoelectronics and Optoelectronics 16, no. 8 (August 1, 2021): 1248–62. http://dx.doi.org/10.1166/jno.2021.3062.

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Control of chaotic nanoelectronic circuit is a typical nonlinear problem. In this paper, we present a four-variable chaotic oscillatory nanoelectronic circuit by the cascade of multiplication, adjustment and elimination DNA chemical reaction modules. Furthermore, a proportional integral (PI) controller of four-variable nonlinear chaotic nanoelectronic circuit is realized based on catalysis and annihilation DNA chemical reaction modules. These DNA modules are realized by a series of DNA strand displacement (DSD) reactions and simulated by Visual DSD. Oscillatory time domain waveforms of four-variable chaotic oscillatory nanoelectronic circuit could be generated by the designed chaotic oscillatory chemical reaction modules. The proposed PI controller could be added for chaotic nanoelectronic circuits to stabilize oscillatory signals and it has robustness to the initial value changes of chaotic nanoelectronic circuit.

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7

Sangwan, Vinod K., and Mark C. Hersam. "Neuromorphic nanoelectronic materials." Nature Nanotechnology 15, no. 7 (March 2, 2020): 517–28. http://dx.doi.org/10.1038/s41565-020-0647-z.

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8

Itoh, Kohei. "Isotopes for nanoelectronic devices." Nature Nanotechnology 4, no. 8 (August 2009): 480–81. http://dx.doi.org/10.1038/nnano.2009.214.

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9

Goldhaber-Gordon, D., M. S. Montemerlo, J. C. Love, G. J. Opiteck, and J. C. Ellenbogen. "Overview of nanoelectronic devices." Proceedings of the IEEE 85, no. 4 (April 1997): 521–40. http://dx.doi.org/10.1109/5.573739.

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10

Luscombe, J. H., and W. R. Frensley. "Models for nanoelectronic devices." Nanotechnology 1, no. 2 (October 1, 1990): 131–40. http://dx.doi.org/10.1088/0957-4484/1/2/002.

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11

Beausoleil, R. G., P. J. Kuekes, G. S. Snider, Shih-Yuan Wang, and R. S. Williams. "Nanoelectronic and Nanophotonic Interconnect." Proceedings of the IEEE 96, no. 2 (February 2008): 230–47. http://dx.doi.org/10.1109/jproc.2007.911057.

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12

de Alencar Braga, Bianca Maria Matos, and Janaina Gonçalves Guimarães. "Nanoelectronic content-addressable memory." Microelectronics Journal 45, no. 8 (August 2014): 1118–24. http://dx.doi.org/10.1016/j.mejo.2014.05.022.

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13

Russer, Peter, and Johannes A. Russer. "Nanoelectronic RF Josephson Devices." IEEE Transactions on Microwave Theory and Techniques 59, no. 10 (October 2011): 2685–701. http://dx.doi.org/10.1109/tmtt.2011.2164549.

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14

Park, Chul Soon, Hyeonseok Yoon, and Oh Seok Kwon. "Graphene-based nanoelectronic biosensors." Journal of Industrial and Engineering Chemistry 38 (June 2016): 13–22. http://dx.doi.org/10.1016/j.jiec.2016.04.021.

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15

Star, A., T. R. Han, V. Joshi, J. C. P. Gabriel, and G. Grüner. "Nanoelectronic Carbon Dioxide Sensors." Advanced Materials 16, no. 22 (October 29, 2004): 2049–52. http://dx.doi.org/10.1002/adma.200400322.

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16

Schrecongost, Dustin, Hai-Tian Zhang, Roman Engel-Herbert, and Cheng Cen. "Oxygen vacancy dynamics in monoclinic metallic VO₂ domain structures." Applied Physics Letters 120, no. 8 (February 21, 2022): 081602. http://dx.doi.org/10.1063/5.0083771.

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It was demonstrated recently that the nano-optical and nanoelectronic properties of VO2 can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal–insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifetimes of sub-100 nm domain structures. This information is imperative for the development of oxide nanoelectronics through defect manipulations.

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17

Homberger, Melanie, and Ulrich Simon. "On the application potential of gold nanoparticles in nanoelectronics and biomedicine." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 368, no. 1915 (March 28, 2010): 1405–53. http://dx.doi.org/10.1098/rsta.2009.0275.

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Ligand-stabilized gold nanoparticles (AuNPs) are of high interest to research dedicated to future technologies such as nanoelectronics or biomedical applications. This research interest arises from the unique size-dependent properties such as surface plasmon resonance or Coulomb charging effects. It is shown here how the unique properties of individual AuNPs and AuNP assemblies can be used to create new functional materials for applications in a technical or biological environment. While the term technical environment focuses on the potential use of AuNPs as subunits in nanoelectronic devices, the term biological environment addresses issues of toxicity and novel concepts of controlling biomolecular reactions on the surface of AuNPs.

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18

Garg, M., and K. Kern. "Attosecond coherent manipulation of electrons in tunneling microscopy." Science 367, no. 6476 (November 14, 2019): 411–15. http://dx.doi.org/10.1126/science.aaz1098.

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Nanoelectronic devices operating in the quantum regime require coherent manipulation and control over electrons at atomic length and time scales. We demonstrate coherent control over electrons in a tunnel junction of a scanning tunneling microscope by means of precise tuning of the carrier-envelope phase of two-cycle long (<6-femtosecond) optical pulses. We explore photon and field-driven tunneling, two different regimes of interaction of optical pulses with the tunnel junction, and demonstrate a transition from one regime to the other. Our results show that it is possible to induce, track, and control electronic current at atomic scales with subfemtosecond resolution, providing a route to develop petahertz coherent nanoelectronics and microscopy.

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19

Strukov, Dmitri B., and Konstantin K. Likharev. "Defect-Tolerant Architectures for Nanoelectronic Crossbar Memories." Journal of Nanoscience and Nanotechnology 7, no. 1 (January 1, 2007): 151–67. http://dx.doi.org/10.1166/jnn.2007.18012.

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We have calculated the maximum useful bit density that may be achieved by the synergy of bad bit exclusion and advanced (BCH) error correcting codes in prospective crossbar nanoelectronic memories, as a function of defective memory cell fraction. While our calculations are based on a particular ("CMOL") memory topology, with naturally segmented nanowires and an area-distributed nano/CMOS interface, for realistic parameters our results are also applicable to "global" crossbar memories with peripheral interfaces. The results indicate that the crossbar memories with a nano/CMOS pitch ratio close to 1/3 (which is typical for the current, initial stage of the nanoelectronics development) may overcome purely semiconductor memories in useful bit density if the fraction of nanodevice defects (stuck-on-faults) is below ∼15%, even under rather tough, 30 ns upper bound on the total access time. Moreover, as the technology matures, and the pitch ratio approaches an order of magnitude, the crossbar memories may be far superior to the densest semiconductor memories by providing, e.g., a 1 Tbit/cm2 density even for a plausible defect fraction of 2%. These highly encouraging results are much better than those reported in literature earlier, including our own early work, mostly due to more advanced error correcting codes.

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20

Millar, Campbell, Scott Roy, Andrew R. Brown, and Asen Asenov. "Simulating the bio–nanoelectronic interface." Journal of Physics: Condensed Matter 19, no. 21 (May 1, 2007): 215205. http://dx.doi.org/10.1088/0953-8984/19/21/215205.

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21

Gromov, D. V., V. V. Elesin, G. V. Petrov, I. I. Bobrinetskii, and V. K. Nevolin. "Radiation effects in nanoelectronic elements." Semiconductors 44, no. 13 (December 2010): 1699–702. http://dx.doi.org/10.1134/s1063782610130166.

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22

Chen, An. "(Invited) Dielectrics in Nanoelectronic Computing." ECS Meeting Abstracts MA2020-01, no. 15 (May 1, 2020): 1040. http://dx.doi.org/10.1149/ma2020-01151040mtgabs.

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23

Roychowdhury, V. P., D. B. Janes, and S. Bandyopadhyay. "Nanoelectronic architecture for Boolean logic." Proceedings of the IEEE 85, no. 4 (April 1997): 574–88. http://dx.doi.org/10.1109/5.573742.

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24

Ognev, A. V., E. V. Sukovatitsina, K. S. Diga, L. A. Chebotkevich, A. S. Samardak, S. M. Janjan, and F. Nasirpouri. "Granulated media for nanoelectronic applications." Journal of Physics: Conference Series 345 (February 9, 2012): 012010. http://dx.doi.org/10.1088/1742-6596/345/1/012010.

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25

Sacchetti, Andrea. "Electrical current in nanoelectronic devices." Physics Letters A 374, no. 39 (August 2010): 4057–60. http://dx.doi.org/10.1016/j.physleta.2010.08.001.

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26

Tkachenko, O. A., V. A. Tkachenko, Z. D. Kvon, A. V. Latyshev, and A. L. Aseev. "Introscopy of quantum nanoelectronic devices." Nanotechnologies in Russia 5, no. 9-10 (October 2010): 676–95. http://dx.doi.org/10.1134/s1995078010090132.

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27

Martorell, Ferran, and Antonio Rubio. "Cell architecture for nanoelectronic design." Microelectronics Journal 39, no. 8 (August 2008): 1041–50. http://dx.doi.org/10.1016/j.mejo.2007.10.008.

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28

Lin, Yung-Chen, Yu Chen, and Yu Huang. "Nanoelectronic Devices from Nanowire Heterostructures." ECS Transactions 33, no. 9 (December 17, 2019): 3–11. http://dx.doi.org/10.1149/1.3493678.

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29

Türel, Özgür, Jung Hoon Lee, Xiaolong Ma, and Konstantin K. Likharev. "Neuromorphic architectures for nanoelectronic circuits." International Journal of Circuit Theory and Applications 32, no. 5 (September 2004): 277–302. http://dx.doi.org/10.1002/cta.282.

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30

Lee, Jung Hoon, and Konstantin K. Likharev. "Defect-tolerant nanoelectronic pattern classifiers." International Journal of Circuit Theory and Applications 35, no. 3 (May 2007): 239–64. http://dx.doi.org/10.1002/cta.410.

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31

Randall, John, Gary Frazier, Alan Seabaugh, and Tom Broekaert. "Potential nanoelectronic integrated circuit technologies." Microelectronic Engineering 32, no. 1-4 (September 1996): 15–30. http://dx.doi.org/10.1016/0167-9317(96)00002-0.

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32

Gerousis, C., S. M. Goodnick, and W. Porod. "Toward nanoelectronic cellular neural networks." International Journal of Circuit Theory and Applications 28, no. 6 (2000): 523–35. http://dx.doi.org/10.1002/1097-007x(200011/12)28:6<523::aid-cta125>3.0.co;2-r.

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33

Sharma, Pankaj, Peggy Schoenherr, and Jan Seidel. "Functional Ferroic Domain Walls for Nanoelectronics." Materials 12, no. 18 (September 10, 2019): 2927. http://dx.doi.org/10.3390/ma12182927.

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A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.

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34

Eom, Kitae, Muqing Yu, Jinsol Seo, Dengyu Yang, Hyungwoo Lee, Jung-Woo Lee, Patrick Irvin, Sang Ho Oh, Jeremy Levy, and Chang-Beom Eom. "Electronically reconfigurable complex oxide heterostructure freestanding membranes." Science Advances 7, no. 33 (August 2021): eabh1284. http://dx.doi.org/10.1126/sciadv.abh1284.

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In recent years, lanthanum aluminate/strontium titanate (LAO/STO) heterointerfaces have been used to create a growing family of nanoelectronic devices based on nanoscale control of LAO/STO metal-to-insulator transition. The properties of these devices are wide-ranging, but they are restricted by nature of the underlying thick STO substrate. Here, single-crystal freestanding membranes based on LAO/STO heterostructures were fabricated, which can be directly integrated with other materials via van der Waals stacking. The key properties of LAO/STO are preserved when LAO/STO membranes are formed. Conductive atomic force microscope lithography is shown to successfully create reversible patterns of nanoscale conducting regions, which survive to millikelvin temperatures. The ability to form reconfigurable conducting nanostructures on LAO/STO membranes opens opportunities to integrate a variety of nanoelectronics with silicon-based architectures and flexible, magnetic, or superconducting materials.

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35

Zhang, Fang, Xianqi Dai, Liangliang Shang, and Wei Li. "Tunable Band Alignment in the Arsenene/WS2 Heterostructure by Applying Electric Field and Strain." Crystals 12, no. 10 (September 30, 2022): 1390. http://dx.doi.org/10.3390/cryst12101390.

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Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fields. Here, we systemically predict the stability and electronic structures of the arsenene/WS2 vdW heterojunction based on first-principles calculations, considering the stacking pattern, electric field, and strain effects. We found that the arsenene/WS2 heterostructure possesses a type-II band alignment. Moreover, the electric field can effectively tune both the band gap and the band alignment type. Additionally, the band gap could be tuned effectively by strain, while the band alignment type is robust under strain. Our study opens up a new avenue for the application of ultrathin arsenene-based vdW heterostructures in future nano- and optoelectronics applications. Our study demonstrates that the arsenene/WS2 heterostructure offers a candidate material for optoelectronic and nanoelectronic devices.

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36

Dmitriev, Victor, Fernando Gomes, and Clerisson Nascimento. "Nanoelectronic Devices Based on Carbon Nanotubes." Journal of Aerospace Technology and Management 7, no. 1 (February 22, 2015): 53–62. http://dx.doi.org/10.5028/jatm.v7i1.358.

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37

Zhbanov, A. I., N. I. Sinitsyn, and G. V. Torgashov. "Nanoelectronic Devices Based on Carbon Nanotubes." Radiophysics and Quantum Electronics 47, no. 5/6 (May 2004): 435–52. http://dx.doi.org/10.1023/b:raqe.0000046318.53459.6e.

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38

Lee, Sang-Kwon, and Ahmad Umar. "A Special Section on Nanoelectronic Devices." Journal of Nanoelectronics and Optoelectronics 12, no. 10 (October 1, 2017): 1105–7. http://dx.doi.org/10.1166/jno.2017.2249.

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39

Worschech, L., D. Hartmann, S. Reitzenstein, and A. Forchel. "Nonlinear properties of ballistic nanoelectronic devices." Journal of Physics: Condensed Matter 17, no. 29 (July 8, 2005): R775—R802. http://dx.doi.org/10.1088/0953-8984/17/29/r01.

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40

Forshaw, M., R. Stadler, D. Crawley, and K. Nikoli. "A short review of nanoelectronic architectures." Nanotechnology 15, no. 4 (February 12, 2004): S220—S223. http://dx.doi.org/10.1088/0957-4484/15/4/019.

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41

Strukov, Dmitri B., and Konstantin K. Likharev. "Prospects for terabit-scale nanoelectronic memories." Nanotechnology 16, no. 1 (December 11, 2004): 137–48. http://dx.doi.org/10.1088/0957-4484/16/1/028.

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42

Likharev, Konstantin K. "CrossNets: Neuromorphic Hybrid CMOS/Nanoelectronic Networks." Science of Advanced Materials 3, no. 3 (June 1, 2011): 322–31. http://dx.doi.org/10.1166/sam.2011.1177.

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43

Kim, Jooho, Hiro Akinaga, Nobufumi Atoda, and Junji Tominaga. "Nanoelectronic devices with reactively fabricated semiconductor." Applied Physics Letters 80, no. 15 (April 15, 2002): 2764–66. http://dx.doi.org/10.1063/1.1470711.

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44

Sköldberg, Jonas, and Göran Wendin. "Reconfigurable logic in nanoelectronic switching networks." Nanotechnology 18, no. 48 (October 30, 2007): 485201. http://dx.doi.org/10.1088/0957-4484/18/48/485201.

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45

He, Kai, and John Cumings. "Diagnosing Nanoelectronic Components Using Coherent Electrons." Nano Letters 13, no. 10 (October 2013): 4815–19. http://dx.doi.org/10.1021/nl402509c.

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46

Vittala, Sandeepa Kulala, and Da Han. "DNA-Guided Assemblies toward Nanoelectronic Applications." ACS Applied Bio Materials 3, no. 5 (January 31, 2020): 2702–22. http://dx.doi.org/10.1021/acsabm.9b01178.

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47

Hobden, Jon. "Tunable graphene bandgap opens nanoelectronic opportunities." Materials Today 12, no. 7-8 (July 2009): 8. http://dx.doi.org/10.1016/s1369-7021(09)70188-9.

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48

Bai, Ping, Hong Son Chu, Mingxia Gu, Oka Kurniawan, and Erping Li. "Integration of plasmonics into nanoelectronic circuits." Physica B: Condensed Matter 405, no. 14 (July 2010): 2978–81. http://dx.doi.org/10.1016/j.physb.2010.01.017.

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49

Cumings, J., T. Brintlinger, K. Baloch, and Y. Qi. "In-Situ Operation of Nanoelectronic Devices." Microscopy and Microanalysis 12, S02 (July 31, 2006): 486–87. http://dx.doi.org/10.1017/s1431927606069169.

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50

Gamiz, F., A. Godoy, L. Donetti, C. Sampedro, J. B. Roldan, F. Ruiz, I. Tienda, N. Rodriguez, and F. Jimenez-Molinos. "Monte Carlo simulation of nanoelectronic devices." Journal of Computational Electronics 8, no. 3-4 (October 2009): 174–91. http://dx.doi.org/10.1007/s10825-009-0295-x.

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