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Journal articles on the topic 'Nano electronics'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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1

Ross, Philip E. "Viral Nano Electronics." Scientific American 295, no. 4 (October 2006): 52–55. http://dx.doi.org/10.1038/scientificamerican1006-52.

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2

Chen, Zhihong, Yu-Ming Lin, Michael J. Rooks, and Phaedon Avouris. "Graphene nano-ribbon electronics." Physica E: Low-dimensional Systems and Nanostructures 40, no. 2 (December 2007): 228–32. http://dx.doi.org/10.1016/j.physe.2007.06.020.

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3

Monteblanco, Elmer, Christian Ortiz Pauyac, Williams Savero, J. Carlos RojasSanchez, and A. Schuhl. "ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS." Revista Cientifica TECNIA 23, no. 1 (March 10, 2017): 5. http://dx.doi.org/10.21754/tecnia.v23i1.62.

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En la actualidad el desarrollo de la tecnología nos ha conducido a elaborar dispositivos nanométricos capaces de almacenar y procesar información. Estos dispositivos serían difíciles de imaginar en la electrónica, la cual se basa en la manipulación de la carga eléctrica del electrón. Sin embargo, gracias a los avances en la física teórica y experimental en el campo de la materia condensada, estos dispositivos ya son una realidad, perteneciendo a lo que actualmente se denomina la electrónica del espín o espintrónica, la cual basa su funcionalidad en el control del espín del electrón, una propiedad que sólo puede ser concebida a nivel cuántico. En el presente artículo revisaremos esta nueva perspectiva, describiendo la Magnetorresistencia Gigante y de Efecto Túnel, la transferencia de momento de espín y sus respectivas aplicaciones como son las memorias MRAM, nano-osciladores y válvulas laterales de espín. Palabras clave.- Espintrónica, Magnetorresistencia, GMR, TMR, MRAM, Nano-osciladores, dinámica de magnetización, Efecto Hall de spin, Transferencia de torque de spin. ABSTRACTCurrent technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves. Keywords.- Spintronics, Magnetoresistance, GMR, TMR, MRAM, Nano-oscillators, Magnetization dynamics, Spin Hall effect, Spin transfer torque.
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4

MIMURA, Hidenori. "Expectation to Vacuum Nano-electronics." Journal of the Vacuum Society of Japan 60, no. 1 (2017): 2–7. http://dx.doi.org/10.3131/jvsj2.60.2.

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5

Gu, Ning, Yan Li, Meng Wang, and Min Cao. "Nano-opto-electronics for biomedicine." Chinese Science Bulletin 58, no. 21 (June 7, 2013): 2521–29. http://dx.doi.org/10.1007/s11434-013-5917-9.

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6

Kaur, Inderpreet, Shriniwas Yadav, Sukhbir Singh, Vanish Kumar, Shweta Arora, and Deepika Bhatnagar. "Nano Electronics: A New Era of Devices." Solid State Phenomena 222 (November 2014): 99–116. http://dx.doi.org/10.4028/www.scientific.net/ssp.222.99.

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The technical and economic growth of the twentieth century was marked by evolution of electronic devices and gadgets. The day-to-day lifestyle has been significantly affected by the advancement in communication systems, information systems and consumer electronics. The lifeline of progress has been the invention of the transistor and its dynamic up-gradation. Discovery of fabricating Integrated Circuits (IC’s) revolutionized the concept of electronic circuits. With advent of time the size of components decreased, which led to increase in component density. This trend of decreasing device size and denser integrated circuits is being limited by the current lithography techniques. Non-uniformity of doping, quantum mechanical tunneling of electrons from source to drain and leakage of electrons through gate oxide limit scaling down of devices. Heat dissipation and capacitive coupling between circuit components becomes significant with decreasing size of the components. Along with the intrinsic technical limitations, downscaling of devices to nanometer sizes leads to a change in the physical mechanisms controlling the charge propagation. To deal with this constraint, the search is on to look around for alternative materials for electronic device application and new methods for electronic device fabrication. Such material is comprised of organic molecules, proteins, carbon materials, DNA and the list is endless which can be grown in the laboratory. Many molecules show interesting electronic properties, which make them probable candidates for electronic device applications. The challenge is to interpret their electronic properties at nanoscale so as to exploit them for use in new generation electronic devices. Need to trim downsize and have a higher component density have ushered us into an era of nanoelectronics.
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7

ALLES, M. L., L. W. MASSENGILL, R. D. SCHRIMPF, R. A. WELLER, and K. F. GALLOWAY. "SINGLE EVENT EFFECTS IN THE NANO ERA." International Journal of High Speed Electronics and Systems 18, no. 04 (December 2008): 815–24. http://dx.doi.org/10.1142/s0129156408005795.

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Scaling of complementary metal oxide semiconductor (CMOS) technologies to the sub-100 nm dimension regime increase the sensitivity to pervasive terrestrial radiation. Diminishing levels of charge associated with information in electronic circuits, interactions of multiple transistors due to tight packing densities, and high circuit clock speeds make single event effects (SEE) a reliability consideration for advanced electronics. The trend to adapt and apply commercial IC processes for space and defense applications has provided a catalyst to the development of infrastructure for analysis and mitigation that can be leveraged for advanced commercial electronic devices. In particular, modeling and simulation, leveraging the dramatic reduction in computing cost and increase in computing power, can be used to analyze the response of electronics to radiation, to develop and evaluate mitigation approaches, and to calculate the frequency of problematic events for target applications and environments.
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8

Feng, Jinjun, Xinghui Li, Jiannan Hu, and Jun Cai. "General Vacuum Electronics." Journal of Electromagnetic Engineering and Science 20, no. 1 (January 31, 2020): 1–8. http://dx.doi.org/10.26866/jees.2020.20.1.1.

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The electron devices in which electrons do not collide with other particles or in which the collision probability is very small in the transport process can be theoretically regarded as general vacuum electron devices. General vacuum electron devices include microfabricated vacuum nano-electronic devices, which can work in atmosphere, and some solid-state electron devices with nanoscale channel for electrons whose material characteristics are close to those of vacuum channels. Vacuum nano-electron devices (e.g., nanotriodes) are expected to be the fundamental elements for high-speed, radiation-resistant large-scale vacuum integrated circuits. The solid-state electron devices with spin semiconductor materials, multiferroics or topological crystal insulators are quite different from traditional semiconductor devices and are expected to operate under novel principles. Understanding vacuum electron devices from a microcosmic perspective and understanding solid-state electron devices from a vacuum perspective will promote a union of vacuum electronics and microelectronics, as well as the formation and development of general vacuum electronics.
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9

Guenther, B., J. Koeble, J. Chrost, M. Maier, C. M. Schneider, A. Bettac, and A. Feltz. "Precision Local Electrical Probing: Potential for the Analysis of Nanocontacts and Nanointerconnects." Microscopy Today 21, no. 2 (March 2013): 30–33. http://dx.doi.org/10.1017/s1551929513000084.

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A major challenge in the development of novel devices in nano and molecular electronics is their interconnection with larger-scale electrical circuits required to control and characterize their functional properties. Local electrical probing by multiple probes with ultimate scanning tunneling microscopy (STM) precision can significantly improve efficiency in analyzing individual nano-electronic devices without the need for full electrical integration.
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10

Zaima, Shigeaki. "Technology Evolution of Silicon Nano-Electronics." ECS Transactions 25, no. 7 (December 17, 2019): 33–47. http://dx.doi.org/10.1149/1.3203942.

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11

Karmakar, S., S. Kumar, R. Rinaldi, and G. Maruccio. "Nano-electronics and spintronics with nanoparticles." Journal of Physics: Conference Series 292 (April 1, 2011): 012002. http://dx.doi.org/10.1088/1742-6596/292/1/012002.

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12

Dutton, Robert W., and Edwin C. Kan. "Hierarchical Process Simulation for Nano-Electronics." VLSI Design 6, no. 1-4 (January 1, 1998): 385–91. http://dx.doi.org/10.1155/1998/19402.

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The challenges of computational electronics are considered from the perspective of process simulation. Essential limitations for device scaling posed from a technology point of view are discussed along with many new research opportunities. The key areas considered include: bulk processing, interconnect technology and software engineering for computational electronics.
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13

Wilson, Edward Guy. "Nano-Molecular Electronics: Ideas and Experiments." Japanese Journal of Applied Physics 34, Part 1, No. 7B (July 30, 1995): 3775–81. http://dx.doi.org/10.1143/jjap.34.3775.

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14

Vilà‐Nadal, Laia, Scott G. Mitchell, Stanislav Markov, Christoph Busche, Vihar Georgiev, Asen Asenov, and Leroy Cronin. "Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics." Chemistry – A European Journal 19, no. 49 (November 8, 2013): 16502–11. http://dx.doi.org/10.1002/chem.201301631.

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15

Steiger, Juergen, T. Lüthge, F. M. Petrat, R. Anselmann, and B. Schleich. "Exploring Nano-Silicon for Printable Electronics." NIP & Digital Fabrication Conference 21, no. 2 (January 1, 2005): 208. http://dx.doi.org/10.2352/issn.2169-4451.2005.21.2.art00065_3.

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16

Kumar, Harish, Anurag Boora, Ankita Yadav, Rajni, and Rahul. "Polyaniline-metal oxide-nano-composite as a nano-electronics, opto-electronics, heat resistance and anticorrosive material." Results in Chemistry 2 (January 2020): 100046. http://dx.doi.org/10.1016/j.rechem.2020.100046.

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17

Collaert, N., A. Alian, H. Arimura, G. Boccardi, G. Eneman, J. Franco, Ts Ivanov, et al. "Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap." Microelectronic Engineering 132 (January 2015): 218–25. http://dx.doi.org/10.1016/j.mee.2014.08.005.

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18

Ray, Asok K., and M. N. Huda. "Silicon-Carbide Nano-Clusters: A Pathway to Future Nano-Electronics." Journal of Computational and Theoretical Nanoscience 3, no. 3 (June 1, 2006): 315–41. http://dx.doi.org/10.1166/jctn.2006.3014.

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19

Altunin, Konstantin K. "Development and Implementation of Electronic Courses «Introduction to Nano-physics» and «Nano-technology and Nano-electronics» in Pedagogical Universities." Volga Region Pedagogical Search 26, no. 4 (2018): 78–91. http://dx.doi.org/10.33065/2307-1052-2018-4-26-78-91.

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20

Zhao, Yuhang, and Jie Jiang. "Recent Progress on Neuromorphic Synapse Electronics: From Emerging Materials, Devices, to Neural Networks." Journal of Nanoscience and Nanotechnology 18, no. 12 (December 1, 2018): 8003–15. http://dx.doi.org/10.1166/jnn.2018.16428.

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To realize intelligent functions in electronic devices like a human brain, it is important to develop the electronic devices that can imitate biological neurons and synapses (synaptic electronics). In this paper, we review the critical learning mechanisms for synaptic plasticity. Different electronic devices were developed to mimic biological synapses, such as atomic switch, phase change memory, ferroelectric memory, and electric-double-layer transistors. More importantly, several groups have realized the artificial neuromorphic network using multi-gate transistor architecture. The leap from synapse to neuron to neural network, thus, has been systematically realized using thin films and nanomaterials. The emerging synaptic electronics can have a broader applications and brighter future in the next-generation intelligent nano-electronics.
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21

Guan, Fangyi, and Chuan Fei Guo. "Flexible, high-strength, and porous nano-nano composites based on bacterial cellulose for wearable electronics: a review." Soft Science 2, no. 3 (2022): 16. http://dx.doi.org/10.20517/ss.2021.19.

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Portable flexible electronics based on petroleum-based polymers have stepped onto the stage of modern technology. Increasing environmental problems facilitate emerging technologies based on cellulose because of its abundant sources and the nature of CO2 consumption and biodegradability. Bacterial cellulose (BC) stands out among all cellulose materials because of its unique features, including the abundant hydrogen bonds, small diameter, three-dimensional nano-networked structures, high purity and crystallinity, and the degree of polymerization. The adequate properties impart BC and its nano-nano composites with superior balance among ductility, strength, and porosity, which are crucial for wearables. The principles of this balance, the fabrication of the nano-nano composites, and the wearable electronic applications based on BC are discussed in detail in this review.
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22

Sekitani, Tsuyoshi. "(Invited, Digital Presentation) Ultra-Thin Organic Integrated Circuits Enabling Bio-Signal Monitoring." ECS Meeting Abstracts MA2022-01, no. 10 (July 7, 2022): 799. http://dx.doi.org/10.1149/ma2022-0110799mtgabs.

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Digital technology has permeated our society, and a wide variety of electronic devices are now in use. In particular, the development of electronic devices for biometric measurements, such as wearable electronics, has been remarkable, and coupled with research and development of high-speed communication and artificial intelligence (AI), many social implementations are being presented. Our group has been conducting research and development on flexible and stretchable electronic systems, which are flexible, soft like rubber, and lightweight, by integrating functional organic nano-materials. In this research activity, our flexible and stretchable electronics have obtained certification for medical devices and are promoting the development of new electronics for use in medical institutions. In this presentation, I would like to introduce our recent activities on the flexible and stretchable electronics utilizing the nanoscience and technology, and developed low-noise and ultra-flexible systems for measuring biological action potentials (electroencephalogram; EEG and electrocardiogram ; ECG).
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23

Hussain, Sadique. "Nanotoxicology: Nano Toxicity in Humans." Pharmaceutics and Pharmacology Research 5, no. 1 (January 4, 2022): 01–03. http://dx.doi.org/10.31579/2693-7247/059.

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Nanoparticles (NPs) have attracted a lot of attention in the fields of electronics, biology, and astronautics because of their unique physicochemical and electrical characteristics. NPs are materials with at least one dimension of fewer than 100 nanometres that are commercially manufactured (Bahadar et al., 2016; Vishwakarma et al., 2010). In the medical field, drugs, proteins, DNA, and monoclonal antibodies are all being delivered via NPs(Hussain et al., 2021).
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24

Way Kuo. "Challenges Related to Reliability in Nano Electronics." IEEE Transactions on Reliability 55, no. 4 (December 2006): 569–70. http://dx.doi.org/10.1109/tr.2006.884585.

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25

Weiss, Jean. "Supramolecular approaches to nano and molecular electronics." Coordination Chemistry Reviews 254, no. 19-20 (October 2010): 2247–48. http://dx.doi.org/10.1016/j.ccr.2010.06.002.

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26

Mayergoyz, I. D., and S. Tyagi. "On spintronics-based nano-scale power electronics." AIP Advances 8, no. 5 (May 2018): 056809. http://dx.doi.org/10.1063/1.5006475.

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27

Wadehra, Neha, Nand Kumar, Shivam Mishra, Ruchi Tomar, and S. Chakraverty. "Nano-electrical domain writing for oxide electronics." Applied Surface Science 509 (April 2020): 145214. http://dx.doi.org/10.1016/j.apsusc.2019.145214.

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28

Triambulo, Ross E., and Jin-Woo Park. "Electronic properties of transparent nano-composite electrodes for application in flexible electronics." Current Applied Physics 15 (May 2015): S12—S16. http://dx.doi.org/10.1016/j.cap.2015.03.010.

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29

Park, Soo Woong, Hui Won Eom, Myung Jun Kim, and Jae Jeong Kim. "Electrodeposition of Nano-Twinned Cu and their Applications in Electronics." Journal of The Electrochemical Society 169, no. 11 (November 1, 2022): 112503. http://dx.doi.org/10.1149/1945-7111/ac9e20.

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Twin boundaries are planar defects between two domains exhibiting mirror symmetry. Nano-twinned metallic materials contain numerous twin boundaries in parent grains exhibiting submicrometer twin spacing. Owing to their unique mechanical and electrical properties, nano-twinned metals have been studied extensively. Although the mechanical strength of the metal can be drastically increased by shrinking grains, nanocrystalline metals lose their ductility (i.e., the strength–ductility tradeoff), and their electrical conductivity is considerably lowered owing to electron scattering at dense grain boundaries. However, nano-twinned metallic materials can overcome these limitations and exhibit excellent strength, ductility, and electrical conductivity. In this paper, the structure and properties of nano-twinned Cu films are reviewed, and direct current and pulse electrodeposition for forming twin boundaries in Cu films and controlling the twin structure and thickness are summarized. Furthermore, the applications of nano-twinned Cu materials for fabricating electronics are presented.
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30

Kazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (March 28, 2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.
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31

Komoto, Yuki, Shintaro Fujii, Madoka Iwane, and Manabu Kiguchi. "Single-molecule junctions for molecular electronics." Journal of Materials Chemistry C 4, no. 38 (2016): 8842–58. http://dx.doi.org/10.1039/c6tc03268k.

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32

DENG, JIE, BENG TIAM SAW, K. H. AARON LAU, OLIVER WILHELMI, HERBERT O. MOSER, and SEAN O'SHEA. "NANOPATTERNED CROSSBAR STRUCTURES FOR MOLECULAR ELECTRONICS." International Journal of Nanoscience 04, no. 04 (August 2005): 461–65. http://dx.doi.org/10.1142/s0219581x05003656.

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Nano-patterned crossbar structures were fabricated as test structures for the development of nanoelectronic devices based on functional molecules. The crossbar structures serve as a platform for testing electronic properties of molecules and their interface to metal electrodes. The fabrication of the crossbar structures involved electron-beam lithography of sub-100-nm features aligned to electrodes pre-patterned by UV lithography and the deposition of and pattern transfer into an intermediate layer. The molecules to be tested were self-assembled as a monolayer on the nano-patterned area. The top electrode structures were subsequently deposited on top of the intermediate layer. The crossbar architecture allows measuring the current-voltage characteristics across the molecules for each crossing point individually.
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33

Kumar, Rakesh. "A high temperature nano/micro vapor phase conformal coating for electronics applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000083–90. http://dx.doi.org/10.4071/hiten-session3a-paper3a_1.

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Through characterization of dielectric and other properties at high temperatures, this work describes the development of a high temperature and UV stable nano/micro vapor phase deposited polymer coating for providing electrical insulation and protection of various electronics from chemical corrosion and other harsh environmental effects. Packaging, protection and reliability of various electronic devices and components, including PCBs, MEMS, optoelectronic devices, fuel cell components and nanoelectronic parts, are becoming more challenging due to the long-term performance requirements on devices. A recently commercialized high temperature polymer, Parylene HT®, offers solutions to many existing protective, packaging and reliability issues of electronic and medical applications, in part because of its excellent electrical and mechanical properties, chemical inertness and long-term thermal stability (high temperature exposure to over 350°C, short-term at 450 °C). Experimental results and commercial applications demonstrate the ability of Parylene HT coating to meet the growing requirements for higher dielectric capabilities, higher temperature integrity and mechanical processing, etc. of dynamic electronics applications. In addition, Parylene HT polymer coating truly conforms to parts due to its molecular level deposition characteristics. Its suitability and biocompatibility encourage researchers to explore Parylene HT's role in sensors and in active electronic devices for various industries.
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34

Deng, Xiangying, and Yukio Kawano. "Terahertz Plasmonics and Nano-Carbon Electronics for Nano-Micro Sensing and Imaging." International Journal of Automation Technology 12, no. 1 (January 5, 2018): 87–96. http://dx.doi.org/10.20965/ijat.2018.p0087.

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Sensing and imaging with THz waves is an active area of modern research in optical science and technology. There have been a number of studies for enhancing THz sensing technologies. In this paper, we review our recent development of THz plasmonic structures and carbon-based THz imagers. The plasmonic structures have strong possibilities of largely increasing detector sensitivity because of their outstanding properties of high transmission enhancement at a subwavelength aperture and local field concentration. We introduce novel plasmonic structures and their performance, including a Si-immersed bull’s-eye antenna and multi-frequency bull’s-eye antennas. The latter part of this paper explains carbon-based THz detectors and their applications in omni-directional flexible imaging. The use of carbon nanotube films has led to a room-temperature, flexible THz detector and has facilitated the visualization of samples with three-dimensional curvatures. The techniques described in this paper can be used effectively for THz sensing and imaging on a micro- and nano-scale.
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35

Deng, J., C. Troadec, and C. Joachim. "Transferring metallic nano-island on hydrogen passivated silicon surface for nano-electronics." IOP Conference Series: Materials Science and Engineering 6 (November 1, 2009): 012033. http://dx.doi.org/10.1088/1757-899x/6/1/012033.

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36

Muldoon, Kirsty, Yanhua Song, Zeeshan Ahmad, Xing Chen, and Ming-Wei Chang. "High Precision 3D Printing for Micro to Nano Scale Biomedical and Electronic Devices." Micromachines 13, no. 4 (April 18, 2022): 642. http://dx.doi.org/10.3390/mi13040642.

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Three dimensional printing (3DP), or additive manufacturing, is an exponentially growing process in the fabrication of various technologies with applications in sectors such as electronics, biomedical, pharmaceutical and tissue engineering. Micro and nano scale printing is encouraging the innovation of the aforementioned sectors, due to the ability to control design, material and chemical properties at a highly precise level, which is advantageous in creating a high surface area to volume ratio and altering the overall products’ mechanical and physical properties. In this review, micro/-nano printing technology, mainly related to lithography, inkjet and electrohydrodynamic (EHD) printing and their biomedical and electronic applications will be discussed. The current limitations to micro/-nano printing methods will be examined, covering the difficulty in achieving controlled structures at the miniscule micro and nano scale required for specific applications.
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37

Guo Cai, Xu, DAI Ming Hu, JI Xiao Li, Zhang Xiao Mei, and Xing Hong Long. "Preparation and Ordered Self-Assembly of Nano-Pd-Ga/PMMA by Ultrasonic." Journal of Nanomaterials 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/368152.

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Nano-Ga-Pd/poly methyl methacrylate (PMMA) composite materials were prepared with the palladium chloride solution containing metal gallium, MMA as monomer, and sodium dodecyl sulfate (SDS) as emulsifier without initiatoror reducer. Pd, Ga, andGa5Pdphase in PMMA matrix were identified by XRD. The characteristic absorption peak at 200 nm for nano-Ga/PMMA polymer solution, at 209 nm for nano-Pd/PMMA polymer solution were proved by UV-Vis; the binding energy changes of O1s, Ga2p3, Ga2d, and Pd3d were characterized by means of X-ray photoelectron spectroscopy. It is concluded that nano-Ga5Pdwas produced based on segment electronics shifting from Gallium to Palladium, and coordination was formed on segment electronics from Gallium to oxygen of PMMA ester group. The anisotropism ordered assembly of PMMA around nano-Ga-Pd particles were illuminated by transmission electron microscopy; it is further interpreted that nano Ga-Pd particles had ordered-assembly induced effect.
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38

Han, Panyang, Xinghui Li, Jun Cai, and Jinjun Feng. "Vertical Nanoscale Vacuum Channel Triodes Based on the Material System of Vacuum Electronics." Micromachines 14, no. 2 (January 30, 2023): 346. http://dx.doi.org/10.3390/mi14020346.

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Nanoscale vacuum channel triodes realize the vacuum-like transmission of electrons in the atmosphere because the transmission distance is less than the mean free path of electrons in air. This new hybrid device is the deep integration of vacuum electronics technology, micro-nano electronics technology, and optoelectronic technology. It has the advantages of both vacuum and solid-state devices and is considered to be the next generation of vacuum electronic devices. In this work, vertical nanoscale vacuum channel diodes and triodes with edge emission were fabricated using advanced micro-nano processing technology. The device materials were all based on the vacuum electronics material system. The field emission characteristics of the devices were investigated. The diode continued emitting at a bias voltage from 0 to 50 V without failure, and the current variation under different vacuum degrees was better than 2.1%. The field emission characteristics of the devices were evaluated over a wide pressure range of between 10−7 Pa and 105 Pa, and the results could explain the vacuum-like behavior of the devices when operating in air. The current variation of the triode is better than 6.1% at Vg = 8 V and Va = 10 V.
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39

Touzel, Jérôme, Eckhard Langer, and Ehrenfried Zschech. "EUFANET Workshop 2012 Report." EDFA Technical Articles 15, no. 3 (August 1, 2013): 20–23. http://dx.doi.org/10.31399/asm.edfa.2013-3.p020.

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Abstract The third extended European Failure Analysis Network (EUFANET) workshop, “Smart FA for New Materials in Electronic Devices,” was held in Dresden, Germany, September 17-18, 2012. This article provides a summary of the event with highlights from presentations on flexible organic electronics, crystal defects in SiC, nanoprobing, and the capabilities of nano X-ray tomography.
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Jamshidi, Reihaneh, Yuanfen Chen, Kathryn White, Nicole Moehring, and Reza Montazami. "Mechanics of Interfacial Bonding in Dissimilar Soft Transient Materials and Electronics." MRS Advances 1, no. 36 (2016): 2501–11. http://dx.doi.org/10.1557/adv.2016.432.

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ABSTRACTSoft transient electronics of polymeric substrates and silver-ink electronics are studied for correlated mechanical-electrical properties. Experimental and predictive finite element analysis are used to understand, explain and predict delamination, cracking, buckling, and failure of printed conductive components of such systems. An active transient polymer system consisting of poly(vinyl alcohol) and sodium bicarbonate is introduced that results in byproducts (alkaline and bubbles) when undergoing transiency. These byproducts are facilitated to control and expedite transiency of the electronic components based on redispersion of metallic nano/micro materials. Complete mechanical and electrical characterization of such systems is reported.
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Verner, V. "Electronics: from “micro” to “nano” and further levels…" Nanoindustry Russia, no. 4 (2015): 6–9. http://dx.doi.org/10.22184/1993-8578.2015.58.4.6.9.

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Palucka, Tim. "Nano Focus: Self-cooling observed in graphene electronics." MRS Bulletin 36, no. 5 (May 2011): 330. http://dx.doi.org/10.1557/mrs.2011.118.

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HIGUCHI, Takuya. "Attosecond Nano-Optics: Toward Light-Field-Driven Electronics." Review of Laser Engineering 45, no. 4 (2017): 221. http://dx.doi.org/10.2184/lsj.45.4_221.

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Gogsadze, R., A. Prangishvili, P. Kervalishvili, R. Chiqovani, and V. Gogichaishvili. "A boundary problem of micro- and nano-electronics." Nanotechnology Perceptions 12, no. 3 (October 30, 2016): 173–83. http://dx.doi.org/10.4024/n15go15a.ntp.12.03.

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Kuo, Yue. "(Invited) Nonvolatile Memories for Nano and Giga Electronics." ECS Transactions 37, no. 1 (December 16, 2019): 157–66. http://dx.doi.org/10.1149/1.3600736.

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Donaldson, Laurie. "New nano-scale thin film material improves electronics." Materials Today 20, no. 7 (September 2017): 338–39. http://dx.doi.org/10.1016/j.mattod.2017.08.013.

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Ogawa, Ken-ichi, Nobuyuki Aoki, Kun'ichi Miyazawa, Shigeo Nakamura, Tadahiko Mashino, Jonathan P. Bird, and Yuichi Ochiai. "C60Nanowhisker Field-Effect-Transistor Application for Nano-Electronics." Japanese Journal of Applied Physics 47, no. 1 (January 22, 2008): 501–4. http://dx.doi.org/10.1143/jjap.47.501.

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Ashwell, Geoffrey J., Piotr Wierzchowiec, Catherine J. Bartlett, and Philip D. Buckle. "Molecular electronics: connection across nano-sized electrode gaps." Chemical Communications, no. 12 (2007): 1254. http://dx.doi.org/10.1039/b615538c.

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Wang, Yu, Jiahui Guo, Dongyu Xu, Zhuxiao Gu, and Yuanjin Zhao. "Micro-/nano-structured flexible electronics for biomedical applications." Biomedical Technology 2 (June 2023): 1–14. http://dx.doi.org/10.1016/j.bmt.2022.11.013.

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Petrescu, Florian Ion, and Relly Victoria Petrescu. "NANO ENERGY." Engevista 19, no. 2 (May 8, 2017): 267. http://dx.doi.org/10.22409/engevista.v19i2.760.

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We live in a world that although saves energy by developing software however still consume an increasing amount of energy annually. Major energy crises world have caused the repeated political crises, economic, industrial, social, religious, and even military. While fossil energy issue is threatened with exhaustion and the nuclear fission is totally unfriendly, we are at the time when humanity must find new energies, alternative, renewable, sustainable, cost-effective, non-hazardous. Besides solar, wind, hydro, geothermal, tidal, present work comes to propose and other new alternative energy type nano. In turn it proposes the nuclear fusion energy, energy produced from matter and antimatter, and energy produced using high power lasers. After 1950, began to appear nuclear fission plants. The fission energy was a necessary evil. In this mode it stretched the oil life, avoiding an energy crisis. Even so, the energy obtained from oil represents about 66% of all energy used. At this rate of use of oil, it will be consumed in about 40 years. Today, the production of energy obtained by nuclear fusion is not yet perfect prepared. But time passes quickly. We must rush to implement of the additional sources of energy already known, but and find new energy sources. In these circumstances this paper comes to proposing possible new energy sources. The movement of an electron around the atomic nucleus has today a great importance in many engineering fields. Electronics, aeronautics, micro and nanotechnology, electrical engineering, optics, lasers, nuclear power, computing, equipment and automation, telecommunications, genetic engineering, bioengineering, special processing, modern welding, robotics, energy and electromagnetic wave field is today only a few of the many applications of electronic engineering. This paper presents shortly in the last chap. a new and original relation which calculates the radius with that the electron is running around the atomic nucleus. For a Bohr energetically level (n=a constant value), one determines now two energetically below levels, which form an electronic layer. The author realizes by this a new atomic model, or a new quantum theory, which explains the existence of electron-clouds without spin, and promises, that application, construction of some high-energy laser.
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