Relevant bibliographies by topics / Nano electronics

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Nano electronics'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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Journal articles on the topic "Nano electronics"

1

Ross, Philip E. "Viral Nano Electronics." Scientific American 295, no. 4 (October 2006): 52–55. http://dx.doi.org/10.1038/scientificamerican1006-52.

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Chen, Zhihong, Yu-Ming Lin, Michael J. Rooks, and Phaedon Avouris. "Graphene nano-ribbon electronics." Physica E: Low-dimensional Systems and Nanostructures 40, no. 2 (December 2007): 228–32. http://dx.doi.org/10.1016/j.physe.2007.06.020.

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Monteblanco, Elmer, Christian Ortiz Pauyac, Williams Savero, J. Carlos RojasSanchez, and A. Schuhl. "ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS." Revista Cientifica TECNIA 23, no. 1 (March 10, 2017): 5. http://dx.doi.org/10.21754/tecnia.v23i1.62.

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En la actualidad el desarrollo de la tecnología nos ha conducido a elaborar dispositivos nanométricos capaces de almacenar y procesar información. Estos dispositivos serían difíciles de imaginar en la electrónica, la cual se basa en la manipulación de la carga eléctrica del electrón. Sin embargo, gracias a los avances en la física teórica y experimental en el campo de la materia condensada, estos dispositivos ya son una realidad, perteneciendo a lo que actualmente se denomina la electrónica del espín o espintrónica, la cual basa su funcionalidad en el control del espín del electrón, una propiedad que sólo puede ser concebida a nivel cuántico. En el presente artículo revisaremos esta nueva perspectiva, describiendo la Magnetorresistencia Gigante y de Efecto Túnel, la transferencia de momento de espín y sus respectivas aplicaciones como son las memorias MRAM, nano-osciladores y válvulas laterales de espín. Palabras clave.- Espintrónica, Magnetorresistencia, GMR, TMR, MRAM, Nano-osciladores, dinámica de magnetización, Efecto Hall de spin, Transferencia de torque de spin. ABSTRACTCurrent technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves. Keywords.- Spintronics, Magnetoresistance, GMR, TMR, MRAM, Nano-oscillators, Magnetization dynamics, Spin Hall effect, Spin transfer torque.
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MIMURA, Hidenori. "Expectation to Vacuum Nano-electronics." Journal of the Vacuum Society of Japan 60, no. 1 (2017): 2–7. http://dx.doi.org/10.3131/jvsj2.60.2.

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Gu, Ning, Yan Li, Meng Wang, and Min Cao. "Nano-opto-electronics for biomedicine." Chinese Science Bulletin 58, no. 21 (June 7, 2013): 2521–29. http://dx.doi.org/10.1007/s11434-013-5917-9.

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Kaur, Inderpreet, Shriniwas Yadav, Sukhbir Singh, Vanish Kumar, Shweta Arora, and Deepika Bhatnagar. "Nano Electronics: A New Era of Devices." Solid State Phenomena 222 (November 2014): 99–116. http://dx.doi.org/10.4028/www.scientific.net/ssp.222.99.

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The technical and economic growth of the twentieth century was marked by evolution of electronic devices and gadgets. The day-to-day lifestyle has been significantly affected by the advancement in communication systems, information systems and consumer electronics. The lifeline of progress has been the invention of the transistor and its dynamic up-gradation. Discovery of fabricating Integrated Circuits (IC’s) revolutionized the concept of electronic circuits. With advent of time the size of components decreased, which led to increase in component density. This trend of decreasing device size and denser integrated circuits is being limited by the current lithography techniques. Non-uniformity of doping, quantum mechanical tunneling of electrons from source to drain and leakage of electrons through gate oxide limit scaling down of devices. Heat dissipation and capacitive coupling between circuit components becomes significant with decreasing size of the components. Along with the intrinsic technical limitations, downscaling of devices to nanometer sizes leads to a change in the physical mechanisms controlling the charge propagation. To deal with this constraint, the search is on to look around for alternative materials for electronic device application and new methods for electronic device fabrication. Such material is comprised of organic molecules, proteins, carbon materials, DNA and the list is endless which can be grown in the laboratory. Many molecules show interesting electronic properties, which make them probable candidates for electronic device applications. The challenge is to interpret their electronic properties at nanoscale so as to exploit them for use in new generation electronic devices. Need to trim downsize and have a higher component density have ushered us into an era of nanoelectronics.
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ALLES, M. L., L. W. MASSENGILL, R. D. SCHRIMPF, R. A. WELLER, and K. F. GALLOWAY. "SINGLE EVENT EFFECTS IN THE NANO ERA." International Journal of High Speed Electronics and Systems 18, no. 04 (December 2008): 815–24. http://dx.doi.org/10.1142/s0129156408005795.

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Scaling of complementary metal oxide semiconductor (CMOS) technologies to the sub-100 nm dimension regime increase the sensitivity to pervasive terrestrial radiation. Diminishing levels of charge associated with information in electronic circuits, interactions of multiple transistors due to tight packing densities, and high circuit clock speeds make single event effects (SEE) a reliability consideration for advanced electronics. The trend to adapt and apply commercial IC processes for space and defense applications has provided a catalyst to the development of infrastructure for analysis and mitigation that can be leveraged for advanced commercial electronic devices. In particular, modeling and simulation, leveraging the dramatic reduction in computing cost and increase in computing power, can be used to analyze the response of electronics to radiation, to develop and evaluate mitigation approaches, and to calculate the frequency of problematic events for target applications and environments.
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Feng, Jinjun, Xinghui Li, Jiannan Hu, and Jun Cai. "General Vacuum Electronics." Journal of Electromagnetic Engineering and Science 20, no. 1 (January 31, 2020): 1–8. http://dx.doi.org/10.26866/jees.2020.20.1.1.

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The electron devices in which electrons do not collide with other particles or in which the collision probability is very small in the transport process can be theoretically regarded as general vacuum electron devices. General vacuum electron devices include microfabricated vacuum nano-electronic devices, which can work in atmosphere, and some solid-state electron devices with nanoscale channel for electrons whose material characteristics are close to those of vacuum channels. Vacuum nano-electron devices (e.g., nanotriodes) are expected to be the fundamental elements for high-speed, radiation-resistant large-scale vacuum integrated circuits. The solid-state electron devices with spin semiconductor materials, multiferroics or topological crystal insulators are quite different from traditional semiconductor devices and are expected to operate under novel principles. Understanding vacuum electron devices from a microcosmic perspective and understanding solid-state electron devices from a vacuum perspective will promote a union of vacuum electronics and microelectronics, as well as the formation and development of general vacuum electronics.
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Guenther, B., J. Koeble, J. Chrost, M. Maier, C. M. Schneider, A. Bettac, and A. Feltz. "Precision Local Electrical Probing: Potential for the Analysis of Nanocontacts and Nanointerconnects." Microscopy Today 21, no. 2 (March 2013): 30–33. http://dx.doi.org/10.1017/s1551929513000084.

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A major challenge in the development of novel devices in nano and molecular electronics is their interconnection with larger-scale electrical circuits required to control and characterize their functional properties. Local electrical probing by multiple probes with ultimate scanning tunneling microscopy (STM) precision can significantly improve efficiency in analyzing individual nano-electronic devices without the need for full electrical integration.
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Zaima, Shigeaki. "Technology Evolution of Silicon Nano-Electronics." ECS Transactions 25, no. 7 (December 17, 2019): 33–47. http://dx.doi.org/10.1149/1.3203942.

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Dissertations / Theses on the topic "Nano electronics"

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Li, Elise Yu-Tzu. "Electronic structure and quantum conductance of molecular and nano electronics." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/65270.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 2011.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 129-137).
This thesis is dedicated to the application of a large-scale first-principles approach to study the electronic structure and quantum conductance of realistic nanomaterials. Three systems are studied using Landauer formalism, Green's function technique and maximally localized Wannier functions. The main focus of this thesis lies on clarifying the effect of chemical modifications on electron transport at the nanoscale, as well as on predicting and designing new type of molecular and nanoelectronic devices. In the first study, we suggest and investigate a quantum interference effect in the porphyrin family molecules. We show that the transmission through a porphyrin molecule at or near the Fermi level varies by orders of magnitude following hydrogen tautomerization. The switching behavior identified in porphyrins implies new application directions in single molecular devices and molecular-size memory elements. Moving on from single molecules to a larger scale, we study the effect of chemical functionalizations to the transport properties of carbon nanotubes. We propose several covalent functionalization schemes for carbon nanotubes which display switchable on/off conductance in metallic tubes. The switching action is achieved by reversible control of bond-cleavage chemistry in [1+2] cycloadditions, via the 8p 3 8s p 2 rehybridization it induces; this leads to remarkable changes of conductance even at very low degrees of functionalization. Several strategies for real-time control on the conductance of carbon nanotubes are then proposed. Such designer functional groups would allow for the first time direct control of the electrical properties of metallic carbon nanotubes, with extensive applications in nanoscale devices. In the last part of the thesis we address the issue of low electrical conductivity observed in carbon nanotube networks. We characterize intertube tunneling between carbon nanotube junctions with or without a covalent linker, and explore the possibility of improving intertube coupling and enhance electrical tunneling by transition metal adsorptions on CNT surfaces. The strong hybridization between transition metal d orbitals with the CNT [pi] orbitals serves as an excellent electrical bridge for a broken carbon nanotube junction. The binding and coupling between a transition metal atom and sandwiching nanotubes can be even stronger in case of nitrogendoped carbon nanotubes. Our studies suggest a more effective strategy than the current cross-linking methods used in carbon nanotube networks.
by Elise Yu-Tzu Li.
Ph.D.
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Lau, Chit. "Single-molecule electronics with graphene nano-electrodes." Thesis, University of Oxford, 2016. https://ora.ox.ac.uk/objects/uuid:bb412c5c-67a2-4c8f-9ba7-38daee151d21.

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Single-molecule electronics have attracted widespread attention for both basic scientific interests and potential in technological applications. However, development has been limited by the difficulty in fabricating robust nano-electrodes suitable for contacting individual molecules. Carbon based materials have recently emerged as alternative electrode materials and possess several distinct advantages over conventional gold based electrodes. This DPhil project is undertaken with the goal of developing graphene nano-electrodes and the subsequent fabrication and characterisation of graphene based single-molecule devices. By combining the best of two prevalent approaches for fabricating graphene nano-gaps: feedback controlled electroburning and plasma etching, it is possible to produce graphene nano-gap with sizes 1-2 nm. The fabrication procedure is performed at room temperature and in ambient conditions with a high yield. Furthermore, arrays can be produced which makes the technique suitable for integration with conventional semiconductor technologies for scalable applications. The graphene nano-electrodes are used to fabricate single-molecule transistors using porphyrin molecules. Due to the stability of the graphene nano-electrodes, the porphyrin single-molecule transistors show reproducible single-electron charging behaviour even at room temperature. High bias and gate transport spectroscopy can be performed where the excited energy spectrum of the molecule is measured. Graphene-fullerene single-molecule transistors are studied. We observe electron avalanche transport and redox-dependent Franck-Condon blockade as a result of the strong electron-vibron coupling and weak vibronic relaxation of the system. The vibrational modes of the molecule are found to be due to both intrinsic vibrational and center-of-mass motion as verified by transport spectroscopy, Raman spectroscopy and DFT calculations. The current stability diagram of our device compares well with a rate equation model from which we extract the electron-vibron coupling constant.
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Melouki, Aissa. "Defect and fault tolerance techniques for nano-electronics." Thesis, University of Southampton, 2011. https://eprints.soton.ac.uk/185987/.

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Nanotechnology-based devices are believed to be the future possible alternative to CMOS-based devices. It is predicted that the high integration density offered by emerging nanotechnologies will be accompanied by high manufacturing defect rates and high operation-time fault rates. This thesis is concerned with developing defect and fault tolerance techniques to address low manufacturing yield due to permanent defects and reduced computational reliability due to transient faults projected in nanoscale devices and nanometre CMOS circuits. The described research makes four key contributions. The first contribution is a novel defect tolerance technique to improve the manufacturing yield of nanometre CMOS logic circuits. The technique is based on replacing each transistor by an N2-transistor structure (N ≥ 2) that guarantees defect tolerance of all (N−1) defects. The targeted defects include stuck-open, stuck-short and bridging defects. Extensive simulation results using ISCAS benchmark circuits, show that the proposed technique achieves manufacturing yield higher than recently proposed techniques and at a reduced area overhead. The second contribution is two new repair techniques, named Tagged Replacement and Modified Tagged Replacement, to improve the manufacturing yield of nanoscale cross-bars implementing logic circuits as look-up tables (LUTs). The techniques are based on highly efficient repair algorithms that improve yield by increasing the resolution of repair. Simulation results show that the proposed techniques are able to provide higher levels of defect tolerance and have lower redundancy requirements than recently reported techniques. Another popular crossbar-based circuit implementation is nanoscale programmable logic arrays (PLAs). The third contribution is a probabilistic defect tolerance design flow that improves the manufacturing yield of nanoscale PLAs and significantly reduces post-fabrication test and diagnosis time. This is achieved by limiting defect diagnosis to the nanowire level rather than the crosspoint level as in previously proposed graph-based techniques. The final contribution involves improving both manufacturing yield and computational reliability of nanoscale crossbars implementing logic circuits as LUTs. This is achieved by combining Hamming and Bose-Chaudhuri-Hocquenghem (BCH) codes together or with N-Modular Redundancy and Bad Line Exclusion techniques. Simulation results show a significant improvement in fault tolerance by the proposed techniques (targeting fault rates upto 20%) when compared to previously reported single coding schemes
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Jiang, Jun. "A Quantum Chemical View of Molecular and Nano-Electronics." Doctoral thesis, Stockholm : Biotechnology, Kungliga tekniska högskolan, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4335.

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Joo, Sung Chul. "Adhesion mechanisms of nano-particle silver to electronics packaging materials." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31730.

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Jiang, Jun. "A generalized quantum chemical approach for nano- and bio-electronics." Licentiate thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-286.

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Simpson, Grant J. "Quinone derivatives as novel single-molecule components for nano-electronics." Thesis, University of St Andrews, 2014. http://hdl.handle.net/10023/6309.

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In this thesis, quinone derivative molecules supported on a Cu(110) surface are studied using scanning tunnelling microscopy (STM). The experimentally investigated system is based on the bistable nature of these compounds, and so the work is introduced in the wider context of molecular electronics (Chapter 1). The theory and experimental techniques are also described (Chapters 2 and 3). In Chapter 4 the switching behaviour of azophenine (AP) and azotolyline (AT) is characterised using STM imaging and spectroscopy, and is demonstrated to be based on a hydrogen tautomerisation reaction. The activation energy for switching is quantified by measurement of the rate of switching as a function of varying bias voltage, and the process is determined to be stimulated by inelastic electron tunnelling. The reaction pathway is also revealed using theoretical modelling. Chapter 5 focusses on the condensed phase of AP on the Cu(110) surface. The switching behaviour is found to be largely quenched in the self- assembled phase, so statistical analyses of the AP-AP and AP-Cu interactions are conducted in order to try to explain this. Chapter 6 returns to the study of isolated AP molecules and investigates the spatial dependence of the switch with respect to the location of electronic excitation. It is shown that the final state of the molecule can be accurately selected by exciting specific functional groups within the molecule. This control originates from the non- degenerate reaction pathways for the sequential transfer of the two tautomeric protons. The work is then discussed in terms of future outlook and potential applications for bistable molecules.
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Froberg, James Steven. "Single-Molecule Studies of Intermolecular Kinetics Using Nano-Electronics Circuits." Diss., North Dakota State University, 2020. https://hdl.handle.net/10365/31915.

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As science and medicine advance, it becomes ever more important to be able to control and analyze smaller and smaller bioparticles all the way down to single molecules. In this dissertation several studies aimed at improving our ability to manipulate and monitor single biomolecules will be discussed. First, we will discuss a study on developing a way to map dielectrophoresis with nanoscale resolution using a novel atomic force microscopy technique. Dielectrophoresis can be applied on nanoparticles through micron-scale electrodes to separate and control said particles. Therefore, this new method of mapping this force will greatly improve our ability to manipulate single biomolecules through dielectrophoresis. The next two studies discussed will be aimed at using carbon nanotube nanocircuits to monitor single protein kinetics in real time. Drug development and delivery methods rely on the precise understanding of protein interactions, thus creating the need for information on single protein dynamics that our techniques provides. The proteins studied in these sections are MMP1 and HDAC8, both of which are known targets of anti-cancer drugs. Finally, we developed a new strategy for diagnosing pancreatic cancer. Our strategy involves using graphene nanotransistors to detect exosomes released from the pancreatic tumor. The ability to reliably diagnose pancreatic cancer before it reaches metastasis would greatly improve the life expectancy of patients who develop this condition. We were able to test our technique on samples from a number of patients and were successfully able to distinguish patients with pancreatic cancer from noncancerous patients.
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Ganti, Srinivas. "Low resistance metal semiconductor contacts : low power nano-electronics and sensing." Thesis, University of Newcastle upon Tyne, 2018. http://hdl.handle.net/10443/4093.

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Metal semiconductor (MS) contacts are essential in nearly every electronic device. High electrical contact resistance degrades device performance, especially at smaller device geometries. The contact resistance normally scales inversely with the cross-sectional area of the MS contact, and this results in poor electrical conduction in small geometries. Additionally, experiments confirm that surface effects dominate over bulk properties, especially at nanoscale geometries. These conditions impose several restrictions in implementing various device technologies. The electronic properties of metal-semiconductor contacts in some important semiconductors such as Si, Ge, GaAs, among others are found to be largely insensitive to the metal workfunction and semiconductor doping level, due to a phenomenon called Fermi level pinning (FLP). FLP can severely degrade device performance, and creates several fabrication challenges. Many semiconductors lose their applicability in mainstream electronics due to restrictions imposed by this effect. FLP effects are practically observed in many semiconductors doped below 1019 cm−3 and are most pronounced in lightly doped and (~intrinsic) pure crystals. This thesis explores material engineering methods to improve contact to semiconductors, without resorting to heavy doping. Large area metal contacts (length/ diameter (d)~ 50-300 μm) are fabricated on Si and Ge. Three key approaches are investigated: (1) Modifying interface dipoles and blocking Metal Induced Gap States (MIGS) using ~ nm thick charged oxide interlayers, implementing planar metal interlayer semiconductor (MIS) contacts (Chapter 4). (2) Exploiting geometric field enhancement in nanostructured hybrid contacts (Chapter 5) and (3) Exploiting voltage controlled non-equilibrium electron heating in island metal films. The contacts produced by these methods (2) and (3) are the first experimental demonstrations to show that limitations imposed by FLP can be overcome by modifying the contact material geometry alone, without using heavy doping. Applying mV range bias to these metallizations causes hot carrier emission from these contact's nanostructured surfaces. Hot carriers are non-equilibrium, energetic carriers that easily overcome the FLP effect in the semiconductor. High conductivity is observed due to the hot carrier effect over a broad range of temperatures -from 4.2 K, tested up to 500 K- despite using low doping in the semiconductor (ND ~ 6.4 × 1014 cm−3). Novel transport processes are revealed by hot carrier tunnelling and emission mechanisms, which improve conductivity in semiconductors, and will potentially be applicable to other low dimensional materials as well. The results in Chapter 5 show an interesting demonstration of hot carrier edge scaling current injection used to achieve Ohmic contact to low doped n-Ge. This contact scheme presents a ii promising alternative to improving conductivity extrinsically, without using heavy doping, and in a scalable manner. Chapter 6 also contains a proof of concept demonstration. It is shown that closely spaced networks of metal nano-islands of critical dimensions are susceptible to non-equilibrium electron heating, when they receive power in the form of voltage controlled tunnel current. This leads to elevated electron temperatures (~103 K) relative to a cold lattice (at ambient temperature). Hot carriers easily overcome small (few eV) electrostatic barriers e.g. Schottky barrier. Consequently, Ohmic conduction is observed at room temperature, and near ballistic hot carrier conduction is observed at 4.2 K through the entire low doped wafer (thickness 0.5 mm, ND ~ 6.4 × 1014 cm−3). The wide scope of these findings may find promising applications in nanoelectronic engineering and applied science. There is considerable incentive to continue the research, and obtain a wider range of materials capable of similar effects, described further in the thesis outlook (Chapter 7). Advancing this research further will translate to applications in high speed switching, sensing, optoelectronics and energy harvesting. It is anticipated that these technologies will be applicable to many semiconductors and can be adapted into heterostructures, using advanced fabrication methods.
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Arab, Hassani Faezeh. "Resonant nano-electro-mechanical sensors for molecular mass-detection." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/336335/.

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This research is conducted as a part of EU FP7 project entitled NEMSIC (hybrid nanoelectro-mechanical/integrated circuit systems for sensing and power management applications) with project partners, EPFL, TU Delft, IMEC-NL, CEA-LETI, SCIPROM, IMEC-BE, Honeywell Romania, and HiQSCREEN. Nano-electro-mechanical (NEM) sensors are getting an increased interest because of their compatibility with “In-IC” integration, low power consumption and high sensitivity to applied force, external damping or additional mass. Today, commercial biosensors are developed based on mass-detection and electro-mechanical principles. One of the recent commercial mass-detection biosensors is a quartz crystal microbalance (QCM) biosensor which achieves the mass sensitivity of a few tens pico g/Hz. The newly developed in-plane resonant NEM (IP R-NEM) sensor in this thesis achieves the mass sensitivity less than zepto g/Hz that is over nine orders smaller than that of the commercial QCM sensor using a much smaller sensing area compared to the QCM sensor. This fact will make the IP-RNEM sensor a world-unique sensor that shows a very high sensitivity to a very small change in mass. The stated mass sensitivity is achieved by modelling the functionalization and detection processes of the suspended beam. For modelling the linker molecules in the functionalization process, a conformal coating layer in different configurations are added to the suspended beam and the sparse distribution of target molecules in the detection process is modeled by changing the density of the coating layer. I would like to clarify that the scaling rule of the mass responsivity is given by k4 regardless of the different functionalization configurations. I develop a completely new hybrid NEM-MOS simulation technology which combines three-dimensional finite element method (3D FEM) based NEM device-level simulation and circuit-level simulation for NEM-MOS hybrid circuits. The FEM device-level simulation module also includes new modelling of selfassembled monolayer for surface functionalization as well as adsorb ed molecules to be detected and facilitates quantitative evaluation of mass responsivity of designed NEM sensor devices. The basic part of the sensor, the NEM structure, includes a suspended beam and two side electrodes and that is fabricated at the Southampton Nanofabrication Centre (SNC). The fabrication at SNC includes a new sensor that uses a free-free beam that improves the quality factor up to five orders of magnitude at room temperature and atmosphere based on the numerical results. The IP R-NEM sensor consists of a suspended beam that is integrated with an in-plane MOSFET and is fabricated by CEA-LETI. The monolithically integrated NEM with the MOSFET on the same SOI layer for the sensor is a real breakthrough which makes it a potential low-cost candidate among the mass-detection based sensors. With respect to the conducted radio-frequency (RF) characterization for nano-wire devices in collaboration with the Tokyo Institute of Technology and NEM structures, the designing of an RF contact pad to reduce the effect of parasitic frequencies and doing the measurement at high vacuum to reduce the motional resistance and increase the quality factor are necessary for the characterization of devices with nano-scale dimensions. The integrated MOSFET in the IP RNEM sensor amplifies the output transmission signal from the resonating beam by its intrinsic gain. The fabricated sensors show a three orders of magnitude larger gain than that of the previously proposed resonant suspended gate FETs by biasing the MOSFET at the optimized voltage biases that are found based on the DC characterization of MOSFETs.
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Books on the topic "Nano electronics"

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Mitsumasa, Iwamoto, ed. Nano-molecular electronics. Tokyo: Japanese Journal of Applied Physics, 1995.

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Edward, Lyshevski Sergey, ed. Nano and molecular electronics handbook. Boca Raton, FL: Taylor & Francis, 2007.

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Lyshevski, Sergey E. Nano and Molecular Electronics Handbook. London: Taylor and Francis, 2007.

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Ura, Katsumi. Nano denshi kōgaku. Tōkyō: Kyōritsu Shuppan, 2006.

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International, Workshop on Microelectronics (6th 2007 Islamabad Pakistan), and Workshop on Microelectronics (6th 2007 Islāmābād Pakistan) International. Microelectronics: Micro and nano-electronics and photonics. New Delhi: Centre for Science & Technology of the Non-aligned and Other Developing Countries, 2009.

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Pekola, Jukka, Berardo Ruggiero, and Paolo Silvestrini, eds. International Workshop on Superconducting Nano-Electronics Devices. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0737-6.

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International, Workshop on Microelectronics (6th 2007 Islamabad Pakistan). Microelectronics: Micro and nano-electronics and photonics. New Delhi: Centre for Science & Technology of the Non-Aligned and Other Developing Countries, 2009.

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International, Workshop on Microelectronics (6th 2007 Islāmābād Pakistan). Microelectronics: Micro and nano-electronics and photonics. New Delhi: Centre for Science & Technology of the Non-Aligned and Other Developing Countries, 2009.

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International Workshop on Microelectronics (6th 2007 Islāmābād, Pakistan). Microelectronics: Micro and nano-electronics and photonics. Edited by Lal Krishan 1941-, Centre for Science and Technology of the Non-Aligned and Other Developing Countries., and Institute of Information Technology (Islamabad, Pakistan). New Delhi: Centre for Science & Technology of the Non-Aligned and Other Developing Countries, 2009.

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name, No. Nano-physics & bio-electronics: a new odyssey. Amsterdam: Elsevier, 2002.

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Book chapters on the topic "Nano electronics"

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Li, Yi, Kyoung-sik (Jack) Moon, and C. P. Wong. "Nano-conductive Adhesives for Nano-electronics Interconnection." In Nano-Bio- Electronic, Photonic and MEMS Packaging, 19–45. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0040-1_2.

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Li, Yi, Kyoung-sik Moon, and C. P. (Ching-Ping) Wong. "Nano-conductive Adhesives for Nano-electronics Interconnection." In Nano-Bio- Electronic, Photonic and MEMS Packaging, 15–30. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-49991-4_2.

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Wang, Shuodao, Jianliang Xiao, Jizhou Song, Yonggang Huang, and John A. Rogers. "Mechanics of Curvilinear Electronics." In Nano and Cell Mechanics, 339–57. Chichester, UK: John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781118482568.ch13.

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Kamins, T. I. "Beyond CMOS Electronics: Self-Assembled Nanostructures." In Into the Nano Era, 227–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-74559-4_9.

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Barman, Ananya. "Review on Biocompatibility of ZnO Nano Particles." In Advancements of Medical Electronics, 343–52. New Delhi: Springer India, 2015. http://dx.doi.org/10.1007/978-81-322-2256-9_32.

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Lall, Pradeep, Saiful Islam, Guoyun Tian, Jeff Suhling, and Darshan Shinde. "Nano-Underfills for Fine-Pitch Electronics." In Nanopackaging, 287–323. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-47325-3_14.

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Ke, Youqi. "Atomistic Simulation of Disordered Nano-electronics." In 21st Century Nanoscience – A Handbook, 16–1. Boca Raton, Florida : CRC Press, [2020]: CRC Press, 2019. http://dx.doi.org/10.1201/9780367333003-16.

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Lee, Seung Woo, Seung Woo Han, Jun Yeob Song, Wan Doo Kim, and Hwa Ki Lee. "Reliability Evaluation System of Electronics Components." In Experimental Mechanics in Nano and Biotechnology, 569–72. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-415-4.569.

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Timp, G., R. E. Howard, and P. M. Mankiewich. "Nano-electronics for Advanced Computation and Communication." In Nanotechnology, 7–87. New York, NY: Springer New York, 1999. http://dx.doi.org/10.1007/978-1-4612-0531-9_2.

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Borja, Juan Pablo, Toh-Ming Lu, and Joel Plawsky. "Theory of Dielectric Breakdown in Nano-Porous Thin Films." In Dielectric Breakdown in Gigascale Electronics, 77–91. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-43220-5_7.

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Conference papers on the topic "Nano electronics"

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Fujita, S. "Nano-electronics challenge chip designers meet real nano-electronics in 2010s?" In 2009 Design, Automation & Test in Europe Conference & Exhibition (DATE'09). IEEE, 2009. http://dx.doi.org/10.1109/date.2009.5090703.

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Ishchenko, O. M., F. Hamouda, P. Aubert, O. Tandia, M. Modreanu, D. I. Sharovarov, F. Ya Akbar, A. R. Kaul, and G. Garry. "Strongly Electronic-Correlated Material for Ultrafast Electronics Application." In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2018. http://dx.doi.org/10.1109/nano.2018.8626322.

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"Micro & nano electronics." In 2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW). IEEE, 2015. http://dx.doi.org/10.1109/eiconrusnw.2015.7102301.

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"Micro & nano electronics." In 2016 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW). IEEE, 2016. http://dx.doi.org/10.1109/eiconrusnw.2016.7448103.

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Polian, Ilia, Frank Altmann, Tolga Arul, Christian Boit, Ralf Brederlow, Lucas Davi, Rolf Drechsler, et al. "Nano Security: From Nano-Electronics to Secure Systems." In 2021 Design, Automation & Test in Europe Conference & Exhibition (DATE). IEEE, 2021. http://dx.doi.org/10.23919/date51398.2021.9474187.

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Rau, Valery G., Oleg R. Nikitin, Kirill A. Gorshkov, Hadi M. Saleh, and Tamara F. Rau. "Cyclic partitions in nano-electronics. Nano-cluster circular systems." In 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). IEEE, 2018. http://dx.doi.org/10.1109/mwent.2018.8337202.

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Ahmed, Iftikhar, and Er-Ping Li. "Time domain modeling: From nano-electronics to nano-photonics." In 2012 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC). IEEE, 2012. http://dx.doi.org/10.1109/apemc.2012.6237988.

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Martin, Alain J., and Piyush Prakash. "Asynchronous Nano-Electronics: Preliminary Investigation." In 2008 14th IEEE International Symposium on Asynchronous Circuits and Systems (ASYNC). IEEE, 2008. http://dx.doi.org/10.1109/async.2008.22.

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Ogata, Naoya. "DNA nano-circuit for electronics." In SPIE NanoScience + Engineering, edited by Norihisa Kobayashi, Fahima Ouchen, and Ileana Rau. SPIE, 2012. http://dx.doi.org/10.1117/12.930918.

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Borkar, S. "Electronics beyond nano-scale CMOS." In 2006 Design Automation Conference. IEEE, 2006. http://dx.doi.org/10.1109/dac.2006.229329.

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Reports on the topic "Nano electronics"

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Strouse, Geoffrey F. Assembling Nano-Materials by Bio-Scaffolding: Crystal Engineering in Nano-Electronics. Fort Belvoir, VA: Defense Technical Information Center, March 2000. http://dx.doi.org/10.21236/ada393942.

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Means, Joel L., and Jerrold Anthony Floro. GeSi strained nanostructure self-assembly for nano- and opto-electronics. Office of Scientific and Technical Information (OSTI), July 2001. http://dx.doi.org/10.2172/889001.

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Kim, Philip. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada616377.

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Dentinger, Paul M., Gregory F. Cardinale, Luke L. Hunter, and Albert Alec Talin. A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography. Office of Scientific and Technical Information (OSTI), December 2003. http://dx.doi.org/10.2172/918247.

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Barron, Andrew R. Group III Materials: New Phases and Nano-Particles with Applications in Electronics and Optoelectronics. Fort Belvoir, VA: Defense Technical Information Center, December 1999. http://dx.doi.org/10.21236/ada377550.

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Krishnamurthy, M., D. J. Swenson, and T. J. Schulz. Instrumentation for Real-Time Information Extraction from RHEED and Correlation Using Scanning Probe Microscopy: Applications to Si-Nano-Electronics. Fort Belvoir, VA: Defense Technical Information Center, July 1998. http://dx.doi.org/10.21236/ada392700.

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Nielsen, Ida Marie B., Nicola Marzari, John Allen Shelnutt, Heather J. Kulik, Craig John Medforth, and Kevin Leung. Improving electronic structure methods to predict nano-optoelectronics and nano-catalyst functions. Office of Scientific and Technical Information (OSTI), October 2009. http://dx.doi.org/10.2172/1001019.

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Gavini, Vikram. Electronic Structure Calculations on Reactive Nano-films. Fort Belvoir, VA: Defense Technical Information Center, March 2013. http://dx.doi.org/10.21236/ada585691.

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Kastner, Marc A. Measurement of Single Electronic Charging of Semiconductor Nano-Crystals. Office of Scientific and Technical Information (OSTI), October 2014. http://dx.doi.org/10.2172/1229880.

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Karna, Shashi P., Govind Mallick, Mark H. Griep, and Craig R. Friedrich. Engineered Nano-bio Hybrid Electronic Platform for Solar Energy Harvesting. Fort Belvoir, VA: Defense Technical Information Center, June 2010. http://dx.doi.org/10.21236/ada524006.

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