Journal articles on the topic 'N-type silicon'
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Hovorka, Miloš, Filip Mika, Petr Mikulík, and Lud\\v{e}k Frank. "Profiling N-Type Dopants in Silicon." MATERIALS TRANSACTIONS 51, no. 2 (2010): 237–42. http://dx.doi.org/10.2320/matertrans.mc200910.
Full textKang, Ying, and Jacob Jorné. "Photoelectrochemical dissolution of N-type silicon." Electrochimica Acta 43, no. 16-17 (May 1998): 2389–98. http://dx.doi.org/10.1016/s0013-4686(97)10150-5.
Full textda Silva, Wilson J., Ivo A. Hümmelgen, and Regina M. Q. Mello. "Sulfonated polyaniline/n-type silicon junctions." Journal of Materials Science: Materials in Electronics 20, no. 2 (February 29, 2008): 123–26. http://dx.doi.org/10.1007/s10854-008-9645-x.
Full textRepo, Päivikki, Jan Benick, Ville Vähänissi, Jonas Schön, Guillaume von Gastrow, Bernd Steinhauser, Martin C. Schubert, Martin Hermle, and Hele Savin. "N-type Black Silicon Solar Cells." Energy Procedia 38 (2013): 866–71. http://dx.doi.org/10.1016/j.egypro.2013.07.358.
Full textGuyader, F., J. K. Jung, M. Guendouz, M. Sarret, and P. Joubert. "n-Type Polydrystalline Silicon for Luminescent Porous Silicon Films." Solid State Phenomena 51-52 (May 1996): 211–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.211.
Full textPark, Sangwook, Eunchel Cho, Dengyuan Song, Gavin Conibeer, and Martin A. Green. "n-Type silicon quantum dots and p-type crystalline silicon heteroface solar cells." Solar Energy Materials and Solar Cells 93, no. 6-7 (June 2009): 684–90. http://dx.doi.org/10.1016/j.solmat.2008.09.032.
Full textKUROKAWA, Akinari, Tetsuo SAKKA, and Yukio H. OGATA. "Maskless Copper Patterning on n-Type Silicon." Journal of The Surface Finishing Society of Japan 56, no. 5 (2005): 281–85. http://dx.doi.org/10.4139/sfj.56.281.
Full textAbun Amanu, Abebaw. "Electronic Electrical Conductivity in N-type Silicon." American Journal of Physics and Applications 4, no. 1 (2016): 5. http://dx.doi.org/10.11648/j.ajpa.20160401.12.
Full textDerbouz, A., A. Slaoui, E. Jolivet, F. de Moro, and C. Belouet. "N-type silicon RST ribbon solar cells." Solar Energy Materials and Solar Cells 107 (December 2012): 212–18. http://dx.doi.org/10.1016/j.solmat.2012.06.024.
Full textItoh, Masashi, Naoki Yamamoto, Kuniko Takemoto, and Osamu Nittono. "Cathodoluminescence Imaging of n-Type Porous Silicon." Japanese Journal of Applied Physics 35, Part 1, No. 8 (August 15, 1996): 4182–86. http://dx.doi.org/10.1143/jjap.35.4182.
Full textCojocaru, Ala, Jürgen Carstensen, Emmanuel K. Ossei-Wusu, Malte Leisner, Oliver Riemenschneider, and Helmut Föll. "Fast macropore growth in n-type silicon." physica status solidi (c) 6, no. 7 (July 2009): 1571–74. http://dx.doi.org/10.1002/pssc.200881031.
Full textScott, B. L., Ke Wang, and G. Pickrell. "Fabrication of n-Type Silicon Optical Fibers." IEEE Photonics Technology Letters 21, no. 24 (December 2009): 1798–800. http://dx.doi.org/10.1109/lpt.2009.2033388.
Full textKwark, Y. H., and R. M. Swanson. "N-type SIPOS and poly-silicon emitters." Solid-State Electronics 30, no. 11 (November 1987): 1121–25. http://dx.doi.org/10.1016/0038-1101(87)90076-1.
Full textAwadelkarim, O. O. "Divacancies production in irradiated n-type silicon." Physica B+C 150, no. 3 (June 1988): 312–18. http://dx.doi.org/10.1016/0378-4363(88)90069-1.
Full textHumlíček, J., and K. Vojtěchovský. "Infrared optical constants of n-type silicon." Czechoslovak Journal of Physics 38, no. 9 (September 1988): 1033–49. http://dx.doi.org/10.1007/bf01597897.
Full textTena-Zaera, R., S. Bastide, and C. Lévy-Clément. "Photoelectrochemical texturization of n-type multicrystalline silicon." physica status solidi (a) 204, no. 5 (May 2007): 1260–65. http://dx.doi.org/10.1002/pssa.200674304.
Full textHÄCKEL, S., J. DONEIT, A. PINKOWSKI, and W. J. LORENZ. "DIODE CHARACTERISTICS OF YBa2Cu3O7/n- TYPE SILICON CONTACTS." Modern Physics Letters B 02, no. 11n12 (December 1988): 1303–8. http://dx.doi.org/10.1142/s0217984988001284.
Full textIkedo, Akihito, Takahiro Kawashima, Takeshi Kawano, and Makoto Ishida. "Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon." Applied Physics Letters 95, no. 3 (July 20, 2009): 033502. http://dx.doi.org/10.1063/1.3178556.
Full textFutagi, Toshiro, Takahiro Matsumoto, Masakazu Katsuno, Yasumitsu Ohta, Hidenori Mimura, and Koich Kitamura. "Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes." Japanese Journal of Applied Physics 31, Part 2, No. 5B (May 15, 1992): L616—L618. http://dx.doi.org/10.1143/jjap.31.l616.
Full textEl Amrani, A., R. Si-Kaddour, M. Maoudj, and C. Nasraoui. "SiN/SiO2 passivation stack of n-type silicon surface." Materials Science-Poland 37, no. 3 (September 1, 2019): 482–87. http://dx.doi.org/10.2478/msp-2019-0065.
Full textMohajerzadeh, S., and C. R. Selvakumar. "A novel n+-polysilicon on n-silicon iso-type diode." Canadian Journal of Physics 74, S1 (December 1, 1996): 186–88. http://dx.doi.org/10.1139/p96-856.
Full textBehzad, Kasra, Wan Mahmood Mat Yunus, Afarin Bahrami, Alireza Kharazmi, and Nayereh Soltani. "Synthesis and characterization of silicon nanorod on n-type porous silicon." Applied Optics 55, no. 9 (March 15, 2016): 2143. http://dx.doi.org/10.1364/ao.55.002143.
Full textToyama, Toshihiko, Tetsuya Suzuki, Akiyoshi Ogane, Jun Ota, and Hiroaki Okamoto. "Electroreflectance study of silicon nanocrystals fabricated from n-type silicon substrate." Journal of Materials Science: Materials in Electronics 18, S1 (March 20, 2007): 443–46. http://dx.doi.org/10.1007/s10854-007-9252-2.
Full textHussein, Mohammed Jabbar, Haider Y. Hamood, Haider Mohammed Shanshool, A. S. Hasaani, and M. J. Jawad. "Open photo-acoustic cell configuration for measuring the thermal diffusivity of n-type silicon and silver/n-type silicon." Journal of Materials Science: Materials in Electronics 28, no. 6 (November 28, 2016): 4925–30. http://dx.doi.org/10.1007/s10854-016-6141-6.
Full textDhar, Sukanta, Sourav Mandal, Gourab Das, Sumita Mukhopadhyay, Partha Pratim Ray, Chandan Banerjee, and Asok Kumar Barua. "Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon." Japanese Journal of Applied Physics 54, no. 8S1 (June 18, 2015): 08KD03. http://dx.doi.org/10.7567/jjap.54.08kd03.
Full textWei, Wensheng, Tianmin Wang, and W. Z. Shen. "Tunnelling in heterojunction of n-type hydrogenated nanocrystalline silicon film with p+-type crystal silicon." Semiconductor Science and Technology 21, no. 4 (March 7, 2006): 532–39. http://dx.doi.org/10.1088/0268-1242/21/4/020.
Full textCotter, J. E., J. H. Guo, P. J. Cousins, M. D. Abbott, F. W. Chen, and K. C. Fisher. "P-Type Versus n-Type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells." IEEE Transactions on Electron Devices 53, no. 8 (August 2006): 1893–901. http://dx.doi.org/10.1109/ted.2006.878026.
Full textFortas, G., S. Sam, Z. Fekih, and N. Gabouze. "Electrodeposition of CoNiFe Alloys on n-Type Silicon." Materials Science Forum 609 (January 2009): 207–12. http://dx.doi.org/10.4028/www.scientific.net/msf.609.207.
Full textSimoen, E., R. Loo, P. Roussel, M. Caymax, H. Bender, C. Claeys, H. J. Herzog, A. Blondeel, and P. Clauws. "Defect analysis of n-type silicon strained layers." Materials Science in Semiconductor Processing 4, no. 1-3 (February 2001): 225–27. http://dx.doi.org/10.1016/s1369-8001(00)00144-x.
Full textGislason, H. P., S. Kristjánsson, and Einar Ö. Sveinbjörnsson. "Lithium-Gold-Related Photoluminescence in n-Type Silicon." Materials Science Forum 196-201 (November 1995): 695–700. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.695.
Full textMouffak, Z., H. Aourag, J. D. Moreno, and J. M. Martinez-Duart. "Quantum size effect from n-type porous silicon." Microelectronic Engineering 43-44 (August 1998): 655–59. http://dx.doi.org/10.1016/s0167-9317(98)00240-8.
Full textYu, H. A., Y. Kaneko, S. Yoshimura, and S. Otani. "Photovoltaic cell of carbonaceous film/n‐type silicon." Applied Physics Letters 68, no. 4 (January 22, 1996): 547–49. http://dx.doi.org/10.1063/1.116395.
Full textTao, Meng, Shruddha Agarwal, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, and Wiley P. Kirk. "Low Schottky barriers on n-type silicon (001)." Applied Physics Letters 83, no. 13 (September 29, 2003): 2593–95. http://dx.doi.org/10.1063/1.1613357.
Full textIstratov, A. A., H. Hieslmair, C. Flink, T. Heiser, and E. R. Weber. "Interstitial copper-related center in n-type silicon." Applied Physics Letters 71, no. 16 (October 20, 1997): 2349–51. http://dx.doi.org/10.1063/1.120026.
Full textTakemoto, Kuniko, Yoshio Nakamura, and Osamu Nittono. "Microstructure and Crystallinity of N-Type Porous Silicon." Japanese Journal of Applied Physics 33, Part 1, No. 12A (December 15, 1994): 6432–36. http://dx.doi.org/10.1143/jjap.33.6432.
Full textForster, Maxime, Bastien Dehestru, Antoine Thomas, Erwann Fourmond, Roland Einhaus, Andres Cuevas, and Mustapha Lemiti. "Compensation engineering for uniform n-type silicon ingots." Solar Energy Materials and Solar Cells 111 (April 2013): 146–52. http://dx.doi.org/10.1016/j.solmat.2013.01.001.
Full textCojocaru, Ala, Jürgen Carstensen, and Helmut Föll. "Growth Modes of Macropores in n-Type Silicon." ECS Transactions 16, no. 3 (December 18, 2019): 157–72. http://dx.doi.org/10.1149/1.2982552.
Full textGaughan, K., S. Nitta, J. M. Viner, J. Hautala, and P. C. Taylor. "n‐type doping of amorphous silicon using tertiarybutylphosphine." Applied Physics Letters 57, no. 20 (November 12, 1990): 2121–23. http://dx.doi.org/10.1063/1.103917.
Full textFukata, Naoki, Shin-ichi Sasaki, Kouichi Murakami, Kunie Ishioka, Masahiro Kitajima, Shuzo Fujimura, and Jun Kikuchi. "Formation of Hydrogen Molecules in n-Type Silicon." Japanese Journal of Applied Physics 35, Part 2, No. 8B (August 15, 1996): L1069—L1071. http://dx.doi.org/10.1143/jjap.35.l1069.
Full textTanaka, Shuji, and Hajime Kitagawa. "Iron-Related Donor Level in N-Type Silicon." Japanese Journal of Applied Physics 34, Part 2, No. 6B (June 15, 1995): L721—L723. http://dx.doi.org/10.1143/jjap.34.l721.
Full textZhang, X. G. "Mechanism of Pore Formation on n‐Type Silicon." Journal of The Electrochemical Society 138, no. 12 (December 1, 1991): 3750–56. http://dx.doi.org/10.1149/1.2085494.
Full textLondos, C. A. "Defect states in electron-bombarded n-type silicon." Physica Status Solidi (a) 113, no. 2 (June 16, 1989): 503–10. http://dx.doi.org/10.1002/pssa.2211130231.
Full textOuir, S., S. Sam, G. Fortas, N. Gabouze, K. Beldjilali, and F. Tighilt. "FeNi alloys electroplated into porous (n-type) silicon." physica status solidi (c) 5, no. 12 (December 2008): 3694–97. http://dx.doi.org/10.1002/pssc.200780175.
Full textWang, C. H., K. Misiakos, and A. Neugroschel. "Minority-carrier transport parameters in n-type silicon." IEEE Transactions on Electron Devices 37, no. 5 (May 1990): 1314–22. http://dx.doi.org/10.1109/16.108194.
Full textMontero, I. "Low temperature nonilluminated anodization of n-type silicon." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 3 (May 1990): 544. http://dx.doi.org/10.1116/1.585017.
Full textShishkin, Y., W. J. Choyke, and R. P. Devaty. "Photoelectrochemical etching of n-type 4H silicon carbide." Journal of Applied Physics 96, no. 4 (August 15, 2004): 2311–22. http://dx.doi.org/10.1063/1.1768612.
Full textCastaldini, Antonio, Daniela Cavalcoli, and Anna Cavallini. "Investigation on Electrical Contacts on N-Type Silicon." Solid State Phenomena 19-20 (January 1991): 529–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.19-20.529.
Full textBallarin, N., C. Carraro, R. Maboudian, and L. Magagnin. "Electropolishing of n-type 3C-polycrystalline silicon carbide." Electrochemistry Communications 40 (March 2014): 17–19. http://dx.doi.org/10.1016/j.elecom.2013.12.018.
Full textEddowes, M. J. "Anodic dissolution of p- and n-type silicon." Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 280, no. 2 (March 1990): 297–311. http://dx.doi.org/10.1016/0022-0728(90)87005-5.
Full textBuchin, E. Yu, A. B. Churilov, and A. V. Prokaznikov. "Different morphology aspects of n-type porous silicon." Applied Surface Science 102 (August 1996): 431–35. http://dx.doi.org/10.1016/0169-4332(96)00093-1.
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