Academic literature on the topic 'N-type silicon'
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Journal articles on the topic "N-type silicon"
Hovorka, Miloš, Filip Mika, Petr Mikulík, and Lud\\v{e}k Frank. "Profiling N-Type Dopants in Silicon." MATERIALS TRANSACTIONS 51, no. 2 (2010): 237–42. http://dx.doi.org/10.2320/matertrans.mc200910.
Full textKang, Ying, and Jacob Jorné. "Photoelectrochemical dissolution of N-type silicon." Electrochimica Acta 43, no. 16-17 (May 1998): 2389–98. http://dx.doi.org/10.1016/s0013-4686(97)10150-5.
Full textda Silva, Wilson J., Ivo A. Hümmelgen, and Regina M. Q. Mello. "Sulfonated polyaniline/n-type silicon junctions." Journal of Materials Science: Materials in Electronics 20, no. 2 (February 29, 2008): 123–26. http://dx.doi.org/10.1007/s10854-008-9645-x.
Full textRepo, Päivikki, Jan Benick, Ville Vähänissi, Jonas Schön, Guillaume von Gastrow, Bernd Steinhauser, Martin C. Schubert, Martin Hermle, and Hele Savin. "N-type Black Silicon Solar Cells." Energy Procedia 38 (2013): 866–71. http://dx.doi.org/10.1016/j.egypro.2013.07.358.
Full textGuyader, F., J. K. Jung, M. Guendouz, M. Sarret, and P. Joubert. "n-Type Polydrystalline Silicon for Luminescent Porous Silicon Films." Solid State Phenomena 51-52 (May 1996): 211–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.211.
Full textPark, Sangwook, Eunchel Cho, Dengyuan Song, Gavin Conibeer, and Martin A. Green. "n-Type silicon quantum dots and p-type crystalline silicon heteroface solar cells." Solar Energy Materials and Solar Cells 93, no. 6-7 (June 2009): 684–90. http://dx.doi.org/10.1016/j.solmat.2008.09.032.
Full textKUROKAWA, Akinari, Tetsuo SAKKA, and Yukio H. OGATA. "Maskless Copper Patterning on n-Type Silicon." Journal of The Surface Finishing Society of Japan 56, no. 5 (2005): 281–85. http://dx.doi.org/10.4139/sfj.56.281.
Full textAbun Amanu, Abebaw. "Electronic Electrical Conductivity in N-type Silicon." American Journal of Physics and Applications 4, no. 1 (2016): 5. http://dx.doi.org/10.11648/j.ajpa.20160401.12.
Full textDerbouz, A., A. Slaoui, E. Jolivet, F. de Moro, and C. Belouet. "N-type silicon RST ribbon solar cells." Solar Energy Materials and Solar Cells 107 (December 2012): 212–18. http://dx.doi.org/10.1016/j.solmat.2012.06.024.
Full textItoh, Masashi, Naoki Yamamoto, Kuniko Takemoto, and Osamu Nittono. "Cathodoluminescence Imaging of n-Type Porous Silicon." Japanese Journal of Applied Physics 35, Part 1, No. 8 (August 15, 1996): 4182–86. http://dx.doi.org/10.1143/jjap.35.4182.
Full textDissertations / Theses on the topic "N-type silicon"
Porter, Nicholas Andrew. "Magnetoresistance in n-type silicon." Thesis, University of Leeds, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534834.
Full textChen, Wan Lam Florence Photovoltaics & Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.
Full textScansen, Donald W. "Excess noise in n-type hydrogenated amorphous silicon." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq23898.pdf.
Full textValavanis, Alexander. "n-type silicon-germanium based terahertz quantum cascade lasers." Thesis, University of Leeds, 2009. http://etheses.whiterose.ac.uk/1262/.
Full textMerazga, Amar. "Steady state and transient photoconductivity in n-type amorphous silicon." Thesis, University of Abertay Dundee, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277887.
Full textEdwards, Matthew Bruce ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics Faculty of Engineering UNSW. "Screen and stencil print technologies for industrial N-type silicon solar cells." Publisher:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2008. http://handle.unsw.edu.au/1959.4/41372.
Full textLam, Chi-hung, and 林志雄. "Defect study of N-type 6H silicon carbide using positron lifetime spectroscopy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29753260.
Full textLam, Chi-hung. "Positron annihilation spectroscopy studies of 6H N-type silicon carbide and Zn-doped P-type gallium antimonide." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B36299996.
Full textRyu, Kyung Sun. "Development of low-cost and high-efficiency commercial size n-type silicon solar cells." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53842.
Full textHo, King-fung, and 何競豐. "Some positron annihilation studies on highly doped and supersaturated N-type silicon." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B30287108.
Full textBooks on the topic "N-type silicon"
United States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.
Find full textUnited States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.
Find full textUnited States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.
Find full textUnited States. National Aeronautics and Space Administration., ed. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.
Find full textPark, Jae Hyun. Interfacial reactions in nickel/titanium ohmic contacts to n-type silicon carbide. 2003.
Find full textUnited States. National Aeronautics and Space Administration., ed. Electrical characterization of 6H crystalline silicon carbide. [Washington, D.C: National Aeronautics and Space Administration, 1994.
Find full textUnited States. National Aeronautics and Space Administration., ed. Electrical characterization of 6H crystalline silicon carbide. [Washington, D.C: National Aeronautics and Space Administration, 1994.
Find full textStockmeier, Ludwig. Heavily N-Type Doped Silicon and the Dislocation Formation During Its Growth by the Czochralski Method. Fraunhofer IRB Verlag, 2018.
Find full textUnited States. National Aeronautics and Space Administration. and Westinghouse Electric Corporation. Advanced Energy Systems Division., eds. Process research of non-CZ silicon material: Quarterly report no. 5, April 1, 1985 - June 30, 1985. [Washington, D.C.?: National Aeronautics and Space Administration, 1985.
Find full textUnited States. National Aeronautics and Space Administration. and Westinghouse Electric Corporation. Advanced Energy Systems Division., eds. Process research of non-CZ silicon material: Quarterly report no. 5, April 1, 1985 - June 30, 1985. [Washington, D.C.?: National Aeronautics and Space Administration, 1985.
Find full textBook chapters on the topic "N-type silicon"
Ke, Y., R. P. Devaty, and W. J. Choyke. "Comparative Columnar Porous Etching Studies on n-Type 6H SiC Crystalline Faces." In Silicon Carbide, 395–409. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch16.
Full textPensl, Gerhard, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, et al. "Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors." In Silicon Carbide, 193–214. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch8.
Full textKe, Yue, Fei Yan, Robert P. Devaty, and W. J. Choyke. "Columnar Pore Growth in n-Type 6H SiC." In Silicon Carbide and Related Materials 2005, 739–42. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.739.
Full textCastaldini, A., D. Cavalcoli, and A. Cavallini. "On the Dirty Contacts on N-Type Silicon." In Crucial Issues in Semiconductor Materials and Processing Technologies, 135–39. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_13.
Full textLevy-Clement, C. "Characteristics of porous n-type silicon obtained by photoelectrochemical etching." In Porous Silicon Science and Technology, 329–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03120-9_20.
Full textWellmann, Peter J., Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe, and Ulrike Künecke. "Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC." In Silicon Carbide and Related Materials 2005, 79–82. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.79.
Full textRauls, E., U. Gerstmann, S. Greulich-Weber, Kurt Semmelroth, Gerhard Pensl, and Eugene E. Haller. "New Aspects in n-type Doping of SiC with Phosphorus." In Silicon Carbide and Related Materials 2005, 609–12. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.609.
Full textHuang, W., T. Khan, and T. P. Chow. "Asymmetric Interface Densities on n and p Type GaN MOS Capacitors." In Silicon Carbide and Related Materials 2005, 1525–28. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1525.
Full textPinheiro, M. V. B., E. Rauls, U. Gerstmann, S. Greulich-Weber, Johann Martin Spaeth, and Harald Overhof. "Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC." In Silicon Carbide and Related Materials 2005, 551–54. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.551.
Full textEwing, D. J., Qamar-ul Wahab, Sergey P. Tumakha, Leonard J. Brillson, X. Y. Ma, Tangali S. Sudarshan, and L. M. Porter. "A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC." In Silicon Carbide and Related Materials 2005, 911–14. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.911.
Full textConference papers on the topic "N-type silicon"
Yang, Seungwon, Younghwan Son, Sung Dae Suk, Dong-Won Kim, Donggun Park, Kyungseok Oh, and Hyungcheol Shin. "Flicker noise in N-type and P-type silicon nanowire transistors." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418460.
Full textBessette, Jonathan T., Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, and Jurgen Michel. "High n-type Doping for Ge Lasers." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/iprsn.2011.ituc5.
Full textGemmel, Catherin, Jan Hensen, Nils Folchert, Felix Haase, Robby Peibst, Sarah Kajari-Schröder, and Rolf Brendel. "9 ms carrier lifetime in kerfless epitaxial wafers by n-type POLO gettering." In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049324.
Full textHuang, Shaoyun, Maki Shimizu, Naoki Fukata, Takashi Sekiguchi, Tomohiro Yamaguchi, and Koji Ishibashi. "An n-type silicon nanowire dot based single-electron transistor." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418430.
Full textCai, Yan, Rodolfo Camacho-Aguilera, Jonathan T. Bessette, Lionel C. Kimerling, and Jurgen Michel. "High n-type doped germanium for electrically pumped Ge laser." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/iprsn.2012.im3a.5.
Full textComparotto, Corrado, Jan Lossen, and Valentin D. Mihailetchi. "Bifacial screen-printed n-type passivated emitter rear totally diffused rear junction solar cells." In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049308.
Full textHalpin, John, Maksym Myronov, Stephen Rhead, and David R. Leadley. "N-type SiGe/Ge superlattice structures for terahertz emission." In 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874635.
Full textYang, Seungwon, Kyoung Hwan Yeo, Dong-Won Kim, Kang-ill Seo, Donggun Park, Gyoyoung Jin, KyungSeok Oh, and Hyungcheol Shin. "Random Telegraph Noise in n-type and p-type silicon nanowire transistors." In 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796809.
Full textBivour, Martin, Christoph Meinhardt, Damian Pysch, Christian Reichel, K. U. Ritzau, Martin Hermle, and Stefan W. Glunz. "n-type silicon solar cells with amorphous/crystalline silicon heterojunction rear emitter." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5614252.
Full textDhamrin, M., A. Uzum, T. Saitoh, I. Yamaga, and K. Kamisako. "Growth of n-type multicrystalline silicon ingots from recycled CZ silicon feedstock." In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922784.
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