Journal articles: 'Multiferroics - Spintronics'

1

Béa, H., M. Gajek, M. Bibes, and A. Barthélémy. "Spintronics with multiferroics." Journal of Physics: Condensed Matter 20, no. 43 (October 9, 2008): 434221. http://dx.doi.org/10.1088/0953-8984/20/43/434221.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

GAREEVA, Z. V., A. M. TROCHINA, and SH T. GAREEV. "MAGNETOELECTRIC EFFECTS AND NEW SPINTRONICS LOGIC DEVICES." Izvestia Ufimskogo Nauchnogo Tsentra RAN, no. 1 (March 31, 2023): 65–70. http://dx.doi.org/10.31040/2222-8349-2023-0-1-65-70.

Full text

Abstract:

The paper discusses new logic spintronic devices and the prospects for the use of perovskite-type multiferroics as working elements of magnetoelectric components. The principle of operation of the considered logical devices is based on the use of two components - a magnetoelectric, in which the magnetic state is recorded due to energy-efficient magnetoelectric interaction, and a spin-orbital component, in which information is read out based on the conversion of spin into charge due to the spin-orbital interaction of electrons; both components are interconnected by a nanoelectrode. When designing new logic spintronic devices, it is necessary to take into account the effectiveness of the mechanisms of ME interactions; features of spin - polarized currents and associated torques influencing magnetic moments; as well as other factors affecting the speed of switching magnetic states and the sensitivity of the device to external agents. Multiferroic materials that are promising for use as elements of ME components of new logic devices must meet a number of requirements, the most significant of which are the magnitude of the magnetoelectric coupling coefficient and the temperature at which ME effects occur. The paper considers representatives of multiferroics with a perovskite structure that meet these conditions, to some extent partially, these are high-temperature multiferroic bismuth ferrite (BiFeO3) and Ruddlesden-Popper structures, in which high-temperature ferroelectric effects are already realized and under certain conditions an ME effect is possible. The crystal structure of these compounds is considered, and the role of crystallographic distortions responsible for the manifestation of magnetoelectric properties is analyzed. Expressions are obtained for the tensor of the magnetoelectric effect as functions of magnetic order parameters, and the fundamental possibility of realizing ME effects in Ruddlesden-Popper structures containing magnetic cations is shown.

APA, Harvard, Vancouver, ISO, and other styles

3

Chen, Aitian, Yuelei Zhao, Yan Wen, Long Pan, Peisen Li, and Xi-Xiang Zhang. "Full voltage manipulation of the resistance of a magnetic tunnel junction." Science Advances 5, no. 12 (December 2019): eaay5141. http://dx.doi.org/10.1126/sciadv.aay5141.

Full text

Abstract:

One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

4

Wang, Jiawei, Aitian Chen, Peisen Li, and Sen Zhang. "Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure." Materials 14, no. 16 (August 17, 2021): 4623. http://dx.doi.org/10.3390/ma14164623.

Full text

Abstract:

Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.

APA, Harvard, Vancouver, ISO, and other styles

5

Zvezdin, A. K., A. S. Logginov, G. A. Meshkov, and A. P. Pyatakov. "Multiferroics: Promising materials for microelectronics, spintronics, and sensor technique." Bulletin of the Russian Academy of Sciences: Physics 71, no. 11 (November 2007): 1561–62. http://dx.doi.org/10.3103/s1062873807110263.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Blessi, S., S. Vijayalakshmi, and S. Pauline. "Synthesis, Structural and Dielectric Properties of Pure and Ni Substituted Bismuth Ferrite." Advanced Materials Research 938 (June 2014): 140–44. http://dx.doi.org/10.4028/www.scientific.net/amr.938.140.

Full text

Abstract:

Multiferroics have been known as materials exhibiting both ferroelectric and ferromagnetic properties in same phase, they have interesting physical properties as well as possibility of practical application in some new memories, spintronics and sensor devices. The present work reports the fabrication of pure and Nickel substituted Bismuth Ferrite by simple hydrothermal method at 180oC for 11 hours. The structural study was carried out using X-ray powder diffraction (XRD), and the Dielectric properties were investigated over a wide range of frequency and temperature. The image of SEM is in good agreement with the XRD analysis. The synthesis method is simple and cost effective. KEYWORDS: Multiferroics; Dielectric loss; Hydrothermal method; XRD.

APA, Harvard, Vancouver, ISO, and other styles

7

Béa, H., M. Bibes, M. Sirena, G. Herranz, K. Bouzehouane, E. Jacquet, S. Fusil, et al. "Combining half-metals and multiferroics into epitaxial heterostructures for spintronics." Applied Physics Letters 88, no. 6 (February 6, 2006): 062502. http://dx.doi.org/10.1063/1.2170432.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Liu, Ming, and Nian X. Sun. "Voltage control of magnetism in multiferroic heterostructures." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2009 (February 28, 2014): 20120439. http://dx.doi.org/10.1098/rsta.2012.0439.

Full text

Abstract:

Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

APA, Harvard, Vancouver, ISO, and other styles

9

Assefa, Gezahegn. "Electric Field Controlled Itinerant Carrier Spin Polarization in Ferromagnetic Semiconductors." Advances in Condensed Matter Physics 2021 (July 12, 2021): 1–5. http://dx.doi.org/10.1155/2021/6663876.

Full text

Abstract:

Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.

APA, Harvard, Vancouver, ISO, and other styles

10

Oda, Tatsuki. "Development and application of the density functional approach with spin density magnetic dipole interaction." Impact 2020, no. 1 (February 27, 2020): 30–31. http://dx.doi.org/10.21820/23987073.2020.1.30.

Full text

Abstract:

Work on magnetism, spintronics and multiferroics has generated a great deal of new insight in the field of nanotechnology. According to Professor Tatsuki Oda, who is an expert in this field, one of the most important advancements is the new computational approach to assessing magnetic anisotropy energy (MAE) in antiferromagnets and ferrimagnets in realistic materials. Oda and his team from the Kanazawa University in Japan have taken this unique approach to achieve a world first - offering new tools to help researchers overcome the existing difficulties experienced in measuring antiferromagnetism. In a recent project, Oda's team have been considering the development and application of the density functional approach with spin density magnetic dipole interaction.

APA, Harvard, Vancouver, ISO, and other styles

11

Pandey, R. K., H. Stern, W. J. Geerts, P. Padmini, P. Kale, Jian Dou, and R. Schad. "Room Temperature Magnetic-Semicondcutors in Modified Iron Titanates: Their Properties and Potential Microelectronic Devices." Advances in Science and Technology 54 (September 2008): 216–22. http://dx.doi.org/10.4028/www.scientific.net/ast.54.216.

Full text

Abstract:

The phenomenal growths of information technology and related fields have warranted the development of new class of materials. Multifunctional oxides, magnetic-semiconductors, multiferroics and smart materials are just a few examples of such materials. They are needed for the development of novel technologies such as spintronics, magneto-electronics, radhard electronics, and advanced microelectronics. For these technologies, of particular interest are some solid solutions of ilmenite-hematite (IH) represented by (1-x) FeTiO3.xFe2O3 where x varies from 0 to 1; Mn-doped ilmenite (Mn+3-FeTiO3) and Mn-doped pseudobrookite, Mn+3-Fe2TiO5 (PsB). These multifunctional oxides are ferromagnetic with the magnetic Curie points well above the room temperature as well as wide bandgap semiconductors with band gap Eg > 2.5 eV. This paper outlines: (a) processing of device quality samples for structural, electrical and magnetic characterization, (b) fabrication and evaluation of an integrated structure for controlled magnetic switching, and (c) the response of the two terminal non-linear current-voltage (I-V) characteristics when biased by a dc voltage. Subsequently, we will identify a few microelectronic applications based on this class of oxides.

APA, Harvard, Vancouver, ISO, and other styles

12

N. V., Srihari, K. B. Vinayakumar, and K. K. Nagaraja. "Magnetoelectric Coupling in Bismuth Ferrite—Challenges and Perspectives." Coatings 10, no. 12 (December 14, 2020): 1221. http://dx.doi.org/10.3390/coatings10121221.

Full text

Abstract:

Multiferroic materials belong to the sub-group of ferroics possessing two or more ferroic orders in the same phase. Aizu first coined the term multiferroics in 1969. Of late, several multiferroic materials’ unique and robust characteristics have shown great potential for various applications. Notably, the coexisting magnetic and electrical ordering results in the Magnetoelectric effect (ME), wherein the electrical polarization can be manipulated by magnetic fields and magnetization by electric fields. Currently, more significant interests lie in significantly enhancing the ME coupling facilitating the realization of Spintronic devices, which makes use of the transport phenomenon of spin-polarized electrons. On the other hand, the magnetoelectric coupling is also pivotal in magnetic memory devices wherein the application of small electric voltage manipulates the magnetic properties of the device. This review gives a brief overview of magnetoelectric coupling in Bismuth ferrite and approaches to achieve higher magnetoelectric coupling and device applications.

APA, Harvard, Vancouver, ISO, and other styles

13

Rajan, P. Iyyappa, S. Mahalakshmi, and Sharat Chandra. "Occurrence of spintronics behaviour (half-metallicity, spin gapless semiconductor and bipolar magnetic semiconductor) depending on the location of oxygen vacancies in BiFe 0.83 Ni 0.17 O 3." Royal Society Open Science 4, no. 6 (June 2017): 170273. http://dx.doi.org/10.1098/rsos.170273.

Full text

Abstract:

The current communication signifies the effect of oxygen vacancies (OVs) both qualitatively and quantitatively in multiferroic BiFe 0.83 Ni 0.17 O 3 by an in-depth atomic-level investigation of its electronic structure and magnetization properties, and these materials have a variety of applications in spintronics, optoelectronics, sensors and solar energy devices. Depending on the precise location of OVs, all the three types of spintronic material namely half-metallic, spin gapless semiconductor and bipolar magnetic conductor have been established in a single material for the first time and both super-exchange and double-exchange interactions are possible in accordance with the precise location of OVs. We have also calculated the vacancy formation energies to predict their thermodynamic stabilities. These results can highlight the impact and importance of OVs that can alter the multiferroic properties of materials.

APA, Harvard, Vancouver, ISO, and other styles

14

Ferreira, P., A. Castro, P. M. Vilarinho, M. G. Willinger, J. Mosa, C. Laberty, and C. Sanchez. "Electron Microscopy Study of Porous and Co Functionalized BaTiO3 Thin Films." Microscopy and Microanalysis 18, S5 (August 2012): 115–16. http://dx.doi.org/10.1017/s1431927612013232.

Full text

Abstract:

Multiferroics are currently of great interest for applications in microelectronics namely in future data storage and spintronic devices. These materials couple simultaneously ferroelectric and ferromagnetic properties and have potentially different applications resulting from the coupling between their dual order parameters. A true multiferroic material is single phase. However, the known true multiferroic materials possess insufficient coupling between the two phenomena or their magnetoelectric response occurs at temperatures too low to be useful in practical applications. But a tremendous progress in the field of microelectronics can be expected if one is able to design an effective multiferroic material with ideal coupling of the ferromagnetic and ferroelectric properties to suit a particular application. Within this context composite structures are gaining considerable interest and different strategies in terms of materials microstructure have been proposed including horizontal multilayers and vertical heterostructures. In the horizontal multilayer heterostructures, the alternating layers of conventional ferro/ferrimagnetic and ferroelectric phases are grown, while in the vertical heterostructures nanopillars of the ferro/ferrimagnetic phase are embedded in a ferroelectric matrix. The later structures show advantages over the first ones because promote larger interfacial surface area and are intrinsically heteroepitaxial in three dimensions; which is expected to allow a stronger coupling between ferroelectric and ferromagnetic components.

APA, Harvard, Vancouver, ISO, and other styles

15

Banerjee, Mahasweta, Ayan Mukherjee, Amit Banerjee, Debajyoti Das, and Soumen Basu. "Enhancement of multiferroic properties and unusual magnetic phase transition in Eu doped bismuth ferrite nanoparticles." New Journal of Chemistry 41, no. 19 (2017): 10985–91. http://dx.doi.org/10.1039/c7nj02769a.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Lacerda, Luis Henrique da Silveira, and Sergio R. de Lazaro. "DFT simulations to clarify the molecular origin of magnetoelectric coupling in R3c materials based on Fe." New Journal of Chemistry 43, no. 26 (2019): 10610–17. http://dx.doi.org/10.1039/c9nj02761k.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

SUN, NIAN X., and GOPALAN SRINIVASAN. "VOLTAGE CONTROL OF MAGNETISM IN MULTIFERROIC HETEROSTRUCTURES AND DEVICES." SPIN 02, no. 03 (September 2012): 1240004. http://dx.doi.org/10.1142/s2010324712400048.

Full text

Abstract:

Multiferroic materials and devices have attracted intensified recent interests due to the demonstrated strong magnetoelectric (ME) coupling in new multiferroic materials and devices with unique functionalities and superior performance characteristics. Strong ME coupling has been demonstrated in a variety of multiferroic heterostructures, including bulk magnetic on ferro/piezoelectric multiferroic heterostructures, magnetic film on ferro/piezoelectric slab multiferroic heterostructures, thin film multiferroic heterostructures, etc. Different multiferroic devices have been demonstrated, which include magnetic sensors, energy harvesters, and voltage tunable multiferroic RF/microwave devices which are compact, lightweight, and power efficient. In this progress report, we cover the most recent progress on multiferroic heterostructures and devices with a focus on voltage tunable multiferroic heterostructures and devices with strong converse ME coupling. Recent progress on magnetic-field tunable RF/microwave devices are also covered, including novel non-reciprocal tunable bandpass filters with ultra wideband isolation, compact, low loss and high power handling phase shifters, etc. These novel tunable multiferroic heterostructures and devices and tunable magnetic devices provide great opportunities for next generation reconfigurable RF/microwave communication systems and radars, Spintronics, magnetic field sensing, etc.

APA, Harvard, Vancouver, ISO, and other styles

18

Yang, X., Z. Zhou, T. Nan, Y. Gao, G. M. Yang, M. Liu, and N. X. Sun. "Recent advances in multiferroic oxide heterostructures and devices." Journal of Materials Chemistry C 4, no. 2 (2016): 234–43. http://dx.doi.org/10.1039/c5tc03008k.

Full text

Abstract:

The increasing demand for realizing ultra-fast, compact, and ultra-low power electronics/spintronics has propelled the creation of novel multiferroic heterostructures which enable voltage control of magnetism in an energy efficient way.

APA, Harvard, Vancouver, ISO, and other styles

19

Trassin, Morgan. "Low energy consumption spintronics using multiferroic heterostructures." Journal of Physics: Condensed Matter 28, no. 3 (December 24, 2015): 033001. http://dx.doi.org/10.1088/0953-8984/28/3/033001.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

De Jesús, Michael Guevara, Mohanchandra K. Panduranga, Paymon Shirazi, Scott Keller, Malcolm Jackson, Kang L. Wang, Christopher S. Lynch, and Gregory P. Carman. "Micro-magnetoelastic modeling of Terfenol-D for spintronics." Journal of Applied Physics 131, no. 23 (June 21, 2022): 234101. http://dx.doi.org/10.1063/5.0090076.

Full text

Abstract:

This article focuses on computational studies evaluating the influence of crystallinity, residual stresses, and out-of-plane (OOP) deterministic switching on Terfenol-D nano/microstructures. The computational models use both coupled and uncoupled Landau–Liftshitz–Gilbert equations with elastodynamics to study strain-induced magnetization reorientation. A Voronoi tessellation approach models the crystal distribution in the microstructures subjected to residual stresses with good agreement to experimental data including large changes in coercivity values, i.e., from 100 to 3000 Oe. Parametric studies show how the coercivity is manipulated with residual stresses, including a magnetoelastically induced perpendicular-magnetic-anisotropy (PMA), important for memory applications. Additional parametric studies focus on epitaxially deposited micro-disks, revealing that residual stresses can create magnetoelastically dominant easy axes along the [Formula: see text] directions, which are energetically favorable relative to the intrinsic [Formula: see text] magnetocrystalline easy axes. Modification of the global easy axis is used to design a strain-mediated multiferroic composite consisting of a 20 nm epitaxially deposited Terfenol-D memory bit with PMA grown on a PZT substrate. The multiferroic disk achieves OOP deterministic clocking with an applied voltage.

APA, Harvard, Vancouver, ISO, and other styles

21

Chaurasiya, Avinash, Manish Anand, and Rajdeep Singh Rawat. "Angle selective piezoelectric strain-controlled magnetization switching in artificial spin ice based multiferroic system." Journal of Applied Physics 131, no. 18 (May 14, 2022): 183901. http://dx.doi.org/10.1063/5.0089902.

Full text

Abstract:

The prospect of electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In this direction, various efforts have been made to achieve electrically controlled magnetization switching utilizing an artificial multiferroic system. To date, the magnetization switching has been realized in a diverse nanopatterned magnetic system. However, the demonstration of electric field-induced strain-controlled magnetization switching in artificial spin ice (ASI) coupled with a piezoelectric material is still unexplored. In the present work, we perform micromagnetic simulations to investigate the electric field-induced strain-mediated magnetization switching in an ASI based multiferroic system. Here, the piezoelectric strain-controlled magnetization switching has been studied by applying the electric-field pulse at different angles with respect to the axes of the system. Remarkably, magnetization switches by [Formula: see text] only if the external electric-field pulse is applied at some specific angles, close to the anisotropy axis of the system ([Formula: see text]–[Formula: see text]). Our detailed analysis of the demagnetization energy variation reveals that the energy barrier becomes antisymmetric in such cases, facilitating complete magnetization reversal. Moreover, we have also proposed a possible magnetization reversal mechanism with two sequential electric-field pulses of a relatively smaller magnitude. We believe that the present work could pave the way for a future ASI-based multiferroic system for scalable magnetic field-free low power spintronics devices.

APA, Harvard, Vancouver, ISO, and other styles

22

Annapureddy, V., N. P. Pathak, and Rabinder Nath. "Structural, Optical and Ferroelectric Properties of BiCoO₃:BiFeO₃ Composite Films." Advanced Materials Research 585 (November 2012): 260–64. http://dx.doi.org/10.4028/www.scientific.net/amr.585.260.

Full text

Abstract:

Multiferroic materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have recently stimulated a sharply increasing number of research activities for their scientific interest and significant technological promise in the novel multifunctional devices. Natural multiferroic single phase compounds are rare, and their magnetoelectric response are relatively weak at room temperature. In contrast, multiferroic composites improve the magnetoelectric coupling at room temperature which can have potential applications in data storage, sensors, spintronics and filters. In view of this, Multiferroic BiFeO3 –BiCoO3 (BF-BC) composite thin films have been prepared by the spray pyrolysis method, where (110) - oriented texture was obtained. X-ray diffraction analyses confirmed that BF-BC composite films were highly (110) textured. The AFM images show that the films were uniform, dance and of nearly spherical shape nanoparticle with size of 18 nm. The (110) - texture BF-BC composite films exhibits improvement in remanent polarization and coercive field with very low leakage current. The optical properties of the composite films have been studied and correlated with their structural parameters.

APA, Harvard, Vancouver, ISO, and other styles

23

Lekha, Chitra, Vivek Sudarsanan, and Geetha Pookat. "Spintronic Devices Based on Multiferroics, A Review of Patents." Recent Patents on Materials Science 7, no. 2 (August 31, 2014): 103–8. http://dx.doi.org/10.2174/1874464807666140619192418.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Berlie, Adam, Ian Terry, and Marek Szablewski. "A 3D antiferromagnetic ground state in a quasi-1D π-stacked charge-transfer system." Journal of Materials Chemistry C 6, no. 46 (2018): 12468–72. http://dx.doi.org/10.1039/c8tc03709d.

Full text

Abstract:

With the rising interest in organic based materials for spintronic and multiferroic applications it is important to fully understand their electrical and magnetic properties and to identify correlations between their structural and physical attributes. In this work we look at a TCNQ based charge transfer compound to provide insight into the low temperature magnetism.

APA, Harvard, Vancouver, ISO, and other styles

25

Spurgeon, Steven. "Epitaxial strain tunes spintronic behavior of multiferroic BiFeO3." MRS Bulletin 38, no. 7 (July 2013): 529. http://dx.doi.org/10.1557/mrs.2013.164.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Nechache, R., C. Harnagea, and F. Rosei. "Multiferroic nanoscale Bi2FeCrO6 material for spintronic-related applications." Nanoscale 4, no. 18 (2012): 5588. http://dx.doi.org/10.1039/c2nr31429k.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Apostolova, Iliana Naumova, Angel Todorov Apostolov, and Julia Mihailowa Wesselinowa. "Origin of Multiferroism of β-NaFeO2." Magnetochemistry 8, no. 9 (September 16, 2022): 104. http://dx.doi.org/10.3390/magnetochemistry8090104.

Full text

Abstract:

The multiferroic β-NaFeO2 is theoretically investigated for the first time using a microscopic model and Green’s function technique. A small room-temperature ferromagnetism is observed, which could be explained by canting of the antiferromagnetic sublattices. The ferromagnetic behaviour can be applied to applications in spintronic devices. We have investigated the temperature and magnetic field dependence of the spontaneous polarization Ps, as calculated from the transverse Ising model and the spin-assisted polarization ΔP due to magnetostriction and antisymmetric Dzyaloshinsky–Moriya interactions. The influence of external magnetic fields along the y and z axis is discussed. This is indirect evidence for the multiferroic behaviour of NaFeO2. The temperature dependence of the relative dielectric permittivity is calculated.

APA, Harvard, Vancouver, ISO, and other styles

28

Hu, J. M., L. Shu, Z. Li, Y. Gao, Y. Shen, Y. H. Lin, L. Q. Chen, and C. W. Nan. "Film size-dependent voltage-modulated magnetism in multiferroic heterostructures." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2009 (February 28, 2014): 20120444. http://dx.doi.org/10.1098/rsta.2012.0444.

Full text

Abstract:

The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology.

APA, Harvard, Vancouver, ISO, and other styles

29

HU, JIA-MIAN, JING MA, JING WANG, ZHENG LI, YUAN-HUA LIN, and C. W. NAN. "MAGNETOELECTRIC RESPONSES IN MULTIFERROIC COMPOSITE THIN FILMS." Journal of Advanced Dielectrics 01, no. 01 (January 2011): 1–16. http://dx.doi.org/10.1142/s2010135x11000021.

Full text

Abstract:

Multiferroic composite thin films of ferroelectrics and magnets have attracted ever-increasing interest in most recent years. In this review, magnetoelectric (ME) responses as well as their underlying ME coupling mechanisms in such multiferroic composite thin films are discussed, oriented by their potential applications in novel ME devices. Among them, the direct ME response, i.e., magnetic-field control of polarization, can be exploited for micro-sensor applications (sensing magnetic field, electric current, light, etc.), mainly determined by a strain-mediated coupling interaction. The converse ME response, i.e., electric-field modulation of magnetism, offers great opportunities for new potential devices for spintronics and in data storage applications. A series of prototype ME devices based on both direct and converse ME responses have been presented. The review concludes with a remark on the future possibilities and scientific challenges in this field.

APA, Harvard, Vancouver, ISO, and other styles

30

Tian, Guo, Wenda Yang, Deyang Chen, Zhen Fan, Zhipeng Hou, Marin Alexe, and Xingsen Gao. "Topological domain states and magnetoelectric properties in multiferroic nanostructures." National Science Review 6, no. 4 (July 1, 2019): 684–702. http://dx.doi.org/10.1093/nsr/nwz100.

Full text

Abstract:

Abstract Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges too. In this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.

APA, Harvard, Vancouver, ISO, and other styles

31

Ni, Hao, Yi Wang, Feng Zhang, Jinwei Yang, Meng Wang, Xin Guo, Lu Chen, Shengnan Wang, and Ming Zheng. "Electric-Field-Tunable Transport and Photo-Resistance Properties in LaMnO3−x/PMN-PT Heterostructures." Coatings 12, no. 7 (June 23, 2022): 890. http://dx.doi.org/10.3390/coatings12070890.

Full text

Abstract:

Multiferroic heterojunctions are promising for application in low-power storage and spintronics due to their magnetoelectric coupling properties. Controlling the magnetic and transport properties of magnetic materials by external stimuli and then realizing advanced devices constitute the key mission in this field. We fabricated a multiferroic heterostructure consisting of a ferroelectric single-crystal (001)-0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate and an epitaxial 40 nm LaMnO3−x film. By applying dc electric fields to the ferroelectric substrate, the resistance and the photo-resistance of the LaMnO3−x film could be significantly modulated. With the electric field increasing from 0 to +4.8 kV/cm, the photo-resistance increased by ~4.1% at room temperature. The curve of photo-resistance versus the cycling electric field has a butterfly shape due to the piezoelectric strain effect. Using in situ X-ray diffraction measurements, the linear relationship of the strain and the electric field was quantitatively studied.

APA, Harvard, Vancouver, ISO, and other styles

32

Bea, H., M. Bibes, G. Herranz, Xiao-Hong Zhu, S. Fusil, K. Bouzehouane, E. Jacquet, C. Deranlot, and A. Barthelemy. "Integration of Multiferroic BiFeO$_3$ Thin Films into Heterostructures for Spintronics." IEEE Transactions on Magnetics 44, no. 7 (July 2008): 1941–45. http://dx.doi.org/10.1109/tmag.2008.924540.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Tong, Wen-Yi, Yue-Wen Fang, Jia Cai, Shi-Jing Gong, and Chun-Gang Duan. "Theoretical studies of all-electric spintronics utilizing multiferroic and magnetoelectric materials." Computational Materials Science 112 (February 2016): 467–77. http://dx.doi.org/10.1016/j.commatsci.2015.07.016.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Suastiyanti, Dwita, Bambang Soegijono, and M. Hikam. "Magnetic Behaviors of BaTiO₃-BaFe₁₂O₁₉ Nanocomposite Prepared by Sol-Gel Process Based on Differences in Volume Fraction." Advanced Materials Research 789 (September 2013): 118–23. http://dx.doi.org/10.4028/www.scientific.net/amr.789.118.

Full text

Abstract:

Barium titanate BaTiO3 (BTO) - barium hexaferrite BaFe12O19 (BHF) nanocomposite could be as a raw material of multiferroic. Multiferroic is a class of materials with coupled electric, magnetic and structural order parameters that yield simultaneous effects of ferroelectric, ferromagnetism and ferroelasticity in the same material. This material has potential applications in such as spintronic devices and sensors. This work was an earlier research towards formation of multiferroic material. Knowing magnetic properties that will lead to a better understanding of magnetoelectric coupling in multiferroic material is the objective of this research.The samples were BTO and BHF prepared by sol-gel and then were mixed in bulk system by a conventional techniques in various of volume fraction between BTO : BHF = 1:1 ; 1:2 and 2:1, then samples were sintered at 925°C for 5, 10 and 15 hours. Composite phase study was carried out using X-Ray Diffraction (XRD). MPS Magnet Physik EP3 Permagraph L was used to characterize magnetic properties. XRD results confirm that composite with volume fraction of BTO : BHF = 1:1 with sintering at 925°C for 5 hours consists only of 2 phases BTO and BHF. There is impurity phase BaFe2O4 beside BTO and BHF phases at samples with volume fraction BTO:BHF = 1:2 and 2:1 for longer sintering. Composite with volume fraction of BTO:BHF = 1:1 for 5 hours sintering has a high value of remanent magnetization 0.081 T and the lowest value of intrinsic coersive 333.6 kA/m leading to good characteristics of multiferroic materials.

APA, Harvard, Vancouver, ISO, and other styles

35

Bhoi, Krishnamayee, Smaranika Dash, Sita Dugu, Dhiren K. Pradhan, Anil K. Singh, Prakash N. Vishwakarma, Ram S. Katiyar, and Dillip K. Pradhan. "Investigation of the Phase Transitions and Magneto-Electric Response in the 0.9(PbFe0.5Nb0.5)O3-0.1Co0.6Zn0.4Fe1.7Mn0.3O4 Particulate Composite." Journal of Composites Science 5, no. 7 (June 24, 2021): 165. http://dx.doi.org/10.3390/jcs5070165.

Full text

Abstract:

Multiferroic composites with enhanced magneto-electric coefficient are suitable candidates for various multifunctional devices. Here, we chose a particulate composite, which is the combination of multiferroic (PbFe0.5Nb0.5O3, PFN) as matrix and magnetostrictive (Co0.6Zn0.4Fe1.7Mn0.3O4, CZFMO) material as the dispersive phase. The X-ray diffraction analysis confirmed the formation of the composite having both perovskite PFN and magnetostrictive CZFMO phases. The scanning electron micrograph (SEM) showed dispersion of the CZFMO phase in the matrix of the PFN phase. The temperature-dependent magnetization curves suggested the transition arising due to PFN and CZFMO phase. The temperature-dependent dielectric study revealed a second-order ferroelectric to the paraelectric phase transition of the PFN phase in the composite with a small change in the transition temperature as compared to pure PFN. The magnetocapacitance (MC%) and magnetoimpedance (MI%) values (obtained from the magneto-dielectric study at room temperature (RT)) at 10 kHz were found to be 0.18% and 0.17% respectively. The intrinsic magneto-electric coupling value for this composite was calculated to be 0.14 mVcm−1Oe−1, which is comparable to other typical multiferroic composites in bulk form. The composite PFN-CZFMO exhibited a converse magneto-electric effect with a change in remanent magnetization value of −58.34% after electrical poling of the material. The obtained outcomes from the present study may be utilized in the understanding and development of new technologies of this composite for spintronics applications.

APA, Harvard, Vancouver, ISO, and other styles

36

Seki, Shinichiro. "Skyrmions in Multiferroic Insulator." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C1547. http://dx.doi.org/10.1107/s2053273314084526.

Full text

Abstract:

Magnetic skyrmion is a topologically stable particle-like object, which appears as nanometer-scale vortex-like spin texture in a chiral-lattice magnet [1]. In metallic materials (MnSi, FeGe, Fe1-xCoxSi etc), electrons moving through skyrmion spin texture gain a nontrivial quantum Berry phase, which provides topological force to the underlying spin texture and enables the current-induced manipulation of magnetic skyrmion [2]. Such electric controllability, in addition to the particle-like nature, is a promising advantage for potential spintronic device applications. Recently, we newly discovered that skyrmions appear also in an insulating chiral-lattice magnet Cu2OSeO3 [3]. We find that the skyrmions in insulator can magnetically induce electric polarization through the relativistic spin-orbit interaction, which implies possible manipulation of the skyrmion by external electric field without loss of joule heating. The present finding of multiferroic skyrmion may pave a new route toward the engineering of novel magnetoelectric devices with high energy efficiency. In this talk, our recent attempts to drive skyrmions by external field are also introduced.

APA, Harvard, Vancouver, ISO, and other styles

37

Pinto, Vishal M., M. S. Arya, Niharika, V. K. Nilakanthan, K. Kumara, and T. Chandra Shekhara Shetty. "Multiferroic bismuth ferrite nanomagnets as potential candidates for spintronics at room temperature." Materials Today: Proceedings 55 (2022): 42–45. http://dx.doi.org/10.1016/j.matpr.2021.12.104.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Liu, Pengfei, Qi Liu, Zedong Xu, Shizhe Wu, and Kaiyou Wang. "Steplike anomalous Hall behaviors in mixed-phase BiFeO₃-based heterostructure." Applied Physics Letters 121, no. 11 (September 12, 2022): 112401. http://dx.doi.org/10.1063/5.0119457.

Full text

Abstract:

The heterostructures based on multiferroic BiFeO3 (BFO) have received much attention for the great potential in magnetoelectric coupling and spintronic applications. Therefore, the BFO films combined with rhombohedral (R) phase and tetragonal (T) phase can bring in various functionalities. Here, we demonstrate that the Ta/Pt/Co/Pt multilayers grown on R-, T-, and mixed-phase BFO exhibit perpendicular magnetic anisotropy. We find that the magnetic switching behavior of the multilayer is sensitive to the phase of the BFO layer. The Ta/Pt/Co/Pt layers grown on top of the pure R- or T-phase BFO show one-step anomalous Hall effect (AHE) switching. However, the layers grown on the mixed-phase BFO show steplike AHE switching. We attribute that the steplike switching behavior originates from the two different interfacial situations between mixed-phase BFO and above layers. Our results bring a potential avenue for realizing spintronic devices based on mixed-phased BFO.

APA, Harvard, Vancouver, ISO, and other styles

39

Suastiyantia, Dwita, Bambang Soegijono, and M. Hikam. "Simple Recipe to Synthesize BaTiO₃-BaFe₁₂O₁₉ Nanocomposite Bulk System with High Magnetization." Applied Mechanics and Materials 493 (January 2014): 634–39. http://dx.doi.org/10.4028/www.scientific.net/amm.493.634.

Full text

Abstract:

Barium titanate BaTiO3 (BTO) - barium hexaferrite BaFe12O19 (BHF) nanocomposite could be as a raw material of multiferroic. Multiferroic is a class of materials with coupled electric, magnetic and structural order parameters that yield simultaneous effects of ferroelectric, ferromagnetism and ferroelasticity in the same material. This material has potential applications in such as spintronic devices and sensors. This work was an earlier research towards formation of multiferroic material. Knowing magnetic properties that will lead to a better understanding of magnetoelectric coupling in multiferroic material is the objective of this research.The samples were BTO and BHF prepared by sol-gel and then were mixed to synthesize composite in bulk system by a conventional techniques in various of weight fraction between BTO : BHF = 1:1 ; 1:2 and 1:3, then samples were sintered at 925°C for 5, 10 and 15 hours for each fraction respectively. Composite phase study was carried out using X-Ray Diffraction (XRD). MPS Magnet Physik EP3 Permagraph L was used to characterize magnetic properties. No residual phases were identified in the XRD analysis for all parameters. The peaks can be only indexed to BaTiO3 and BaFe12O19 phases for all parameters respectively confirming the formation of a BaTiO3-BaFe12O19 composite system. Barium titanate retains its tetragonal structure while barium hexaferrite exhibits hexagonal structure. For weight fraction of BaFe12O19 until 2 parts there is an increase of intrinsic coersive and saturation magnetization value. The maximum values of intrinsic coersive for samples with 5, 10 and 15 hours sintering are of 361.3 kA/m, 359.0 kA/m and 391.6 kA/m respectively and the maximum values of saturation are of 0.1515 T, 0.1516 T and 0.1414 T respectively leading to good characteristics of multiferroic materials.

APA, Harvard, Vancouver, ISO, and other styles

40

Klein, D. R., D. MacNeill, J. L. Lado, D. Soriano, E. Navarro-Moratalla, K. Watanabe, T. Taniguchi, et al. "Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling." Science 360, no. 6394 (May 3, 2018): 1218–22. http://dx.doi.org/10.1126/science.aar3617.

Full text

Abstract:

Magnetic insulators are a key resource for next-generation spintronic and topological devices. The family of layered metal halides promises varied magnetic states, including ultrathin insulating multiferroics, spin liquids, and ferromagnets, but device-oriented characterization methods are needed to unlock their potential. Here, we report tunneling through the layered magnetic insulator CrI3 as a function of temperature and applied magnetic field. We electrically detect the magnetic ground state and interlayer coupling and observe a field-induced metamagnetic transition. The metamagnetic transition results in magnetoresistances of 95, 300, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers, respectively. We further measure inelastic tunneling spectra for our junctions, unveiling a rich spectrum consistent with collective magnetic excitations (magnons) in CrI3.

APA, Harvard, Vancouver, ISO, and other styles

41

Yuan, Jia-Hui, Ya-Bo Chen, Shu-Qing Dou, Bo Wei, Huan-Qing Cui, Ming-Xu Song, and Xiao-Kuo Yang. "Pure voltage-driven spintronic neuron based on stochastic magnetization switching behaviour." Nanotechnology 33, no. 15 (January 18, 2022): 155201. http://dx.doi.org/10.1088/1361-6528/ac4662.

Full text

Abstract:

Abstract Voltage-driven stochastic magnetization switching in a nanomagnet has attracted more attention recently with its superiority in achieving energy-efficient artificial neuron. Here, a novel pure voltage-driven scheme with ∼27.66 aJ energy dissipation is proposed, which could rotate magnetization vector randomly using only a pair of electrodes covered on the multiferroic nanomagnet. Results show that the probability of 180° magnetization switching is examined as a sigmoid-like function of the voltage pulse width and magnitude, which can be utilized as the activation function of designed neuron. Considering the size errors of designed neuron in fabrication, it’s found that reasonable thickness and width variations cause little effect on recognition accuracy for MNIST hand-written dataset. In other words, the designed pure voltage-driven spintronic neuron could tolerate size errors. These results open a new way toward the realization of artificial neural network with low power consumption and high reliability.

APA, Harvard, Vancouver, ISO, and other styles

42

Biswas, Ayan K., Jayasimha Atulasimha, and Supriyo Bandyopadhyay. "Energy-Efficient Hybrid Spintronic–Straintronic Nonvolatile Reconfigurable Equality Bit Comparator." SPIN 07, no. 02 (May 23, 2017): 1750004. http://dx.doi.org/10.1142/s2010324717500047.

Full text

Abstract:

We propose and analyze a “spintronic/straintronic” reconfigurable equality bit comparator implemented with a nanowire spin valve whose two contacts are two-phase multiferroic nanomagnets and possess bistable magnetization. A reference bit is “written” into a stable magnetization state of one contact and an input bit in that of the other with electrically generated strain. The spin-valve’s resistance is lowered (raised) if the bits match (do not match). Multiple comparators can be interfaced in parallel with a magneto-tunneling junction to determine if an [Formula: see text]-bit input stream matches an [Formula: see text]-bit reference stream bit by bit. The system is robust against thermal noise at room temperature and a 16-bit comparator can operate at [Formula: see text][Formula: see text]MHz while dissipating [Formula: see text][Formula: see text]28[Formula: see text]fJ per cycle. This implementation is more energy-efficient than CMOS-based implementations and the reference bits can be stored in the comparator itself without the need for refresh cycles or the need to fetch them from a remote memory for comparison. That improves reliability, speed and security.

APA, Harvard, Vancouver, ISO, and other styles

43

Huong Giang, D. T., V. N. Thuc, and N. H. Duc. "Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics." Journal of Magnetism and Magnetic Materials 324, no. 13 (July 2012): 2019–23. http://dx.doi.org/10.1016/j.jmmm.2012.01.038.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Zhou, Ziyao, Qu Yang, Ming Liu, Zhiguo Zhang, Xinyang Zhang, Dazhi Sun, Tianxiang Nan, Nianxiang Sun, and Xing Chen. "Antiferroelectric Materials, Applications and Recent Progress on Multiferroic Heterostructures." SPIN 05, no. 01 (March 2015): 1530001. http://dx.doi.org/10.1142/s2010324715300017.

Full text

Abstract:

Antiferroelectric (AFE) materials with adjacent dipoles oriented in antiparallel directions have a double polarization hysteresis loops. An electric field (E-field)-induced AFE–ferroelectric (FE) phase transition takes place in such materials, leading to a large lattice strain and energy change. The high dielectric constant and the distinct phase transition in AFE materials provide great opportunities for the realization of energy storage devices like super-capacitors and energy conversion devices such as AFE MEMS applications. Lots of work has been done in this field since 60–70 s. Recently, the strain tuning of the spin, charge and orbital orderings and their interactions in complex oxides and multiferroic heterostructures have received great attention. In these systems, a single control parameter of lattice strain is used to control lattice–spin, lattice–phonon, and lattice–charge interactions and tailor properties or create a transition between distinct magnetic/electronic phases. Due to the large strain/stress arising from the phase transition, AFE materials are great candidates for integrating with ferromagnetic (FM) materials to realize in situ manipulation of magnetism and lattice-ordered parameters by voltage. In this paper, we introduce the AFE material and it's applications shortly and then review the recent progress in AFEs based on multiferroic heterostructures. These new multiferroic materials could pave a new way towards next generation light, compact, fast and energy efficient voltage tunable RF/microwave, spintronic and memory devices promising approaches to in situ manipulation of lattice-coupled order parameters is to grow epitaxial oxide films on FE/ferroelastic substrates.

APA, Harvard, Vancouver, ISO, and other styles

45

Chang, Shu-Jui, Ming-Han Chung, Ming-Yi Kao, Shang-Fan Lee, Yi-Hsing Yu, Chao-Cheng Kaun, Tetsuya Nakamura, Norimasa Sasabe, Shang-Jui Chu, and Yuan-Chieh Tseng. "GdFe0.8Ni0.2O3: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity." ACS Applied Materials & Interfaces 11, no. 34 (August 2, 2019): 31562–72. http://dx.doi.org/10.1021/acsami.9b11767.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Kundu, Shovan Kumar, Dhiraj Kumar Rana, and Soumen Basu. "Observation of room temperature multiferroic and electrical properties in gadolinium ferrite nanoparticles." Modern Physics Letters B 33, no. 21 (July 30, 2019): 1950243. http://dx.doi.org/10.1142/s0217984919502439.

Full text

Abstract:

The formation and characterization of multiferroic Gadolinium Ferrite (GdFeO3) nanoparticles has been demonstrated in detail. The structural, magnetic, magnetodielectric, ferroelectric, optical and electrical properties are studied at different temperature ranges. Dielectric properties, DC and AC transport properties and dielectric relaxation behavior are analyzed in electrical characterization. XRD pattern confirms the phase formation where crystallite size, lattice strain, etc. are carried out by Rietveld refinement and Williamson–Hall plot. Average particle size is 64 nm, which is calculated from TEM image. Mixed ferroic order of ferromagnetism and antiferromagnetism along with exchange bias are detected in the nanoparticles. Ferroelectric nature of the sample is confirmed by the P-E hysteresis loops. Positive magnetodielectric coupling is observed in GdFeO3 nanoparticles, which is a signature of multifunctionality nature. Charge transport mechanism of DC and AC applied electric field is successfully analyzed with Mott’s variable range hopping (VRH) and correlated barrier hopping (CBH) theoretical models, respectively. Non-Debye type relaxation behavior is observed with activation energy of 0.37 eV. Optical band gap is calculated from the Tauc plot (2.98 eV) which confirms the semiconducting nature of the sample. Existence of ferromagnetic/antiferromagnetic (FM/AFM) and ferroelectric along with magnetodielctric coupling ensures the multiferroic property of GdFeO3 nanoparticles, which may enhance potentiality in spintronic device applications.

APA, Harvard, Vancouver, ISO, and other styles

47

Kumar, Ashwini, Poorva Sharma, Qi Li, Fujun Qiu, Jianhui Yan, Jingyou Tang, and Guolong Tan. "Observation of Spin Reorientation Transitions in Lead and Titanium-Modified BiFeO3 Multiferroics." Advances in Materials Science and Engineering 2021 (October 14, 2021): 1–9. http://dx.doi.org/10.1155/2021/5525158.

Full text

Abstract:

We report the synthesis and basic characterization details of bulk Bi1 − xPbxFe1 − xTixO3 (x = 0.05 and 0.1) polycrystalline samples, which have been synthesized using the conventional solid-state route. We studied the effects of partially doping of Pb and Ti ion on structural, vibrational, and magnetic properties of multiferroic BiFeO3. X-ray diffraction (XRD) was used for crystallographic studies, followed by Rietveld refinement, and phase formation of the compounds was confirmed, which indicates that the sample has rhombohedral (R3c, 100%) symmetry for x = 0.05 and R3c (98%) + P4mm (2%) symmetry for x = 0.1. X-ray absorption spectroscopy has been probed at Fe L2,3 and O K edges to determine the valence (charge) state of Fe in BiFeO3. Interestingly, the magnetic measurement results revealed the existence of spin reorientation transition in Pb and Ti-modified BiFeO3, which indicates that the BiFeO3 samples studied may find promising applications in memory and spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

48

Kumar, Ashwini, Poorva Sharma, Qi Li, Fujun Qiu, Jianhui Yan, Jingyou Tang, and Guolong Tan. "Observation of Spin Reorientation Transitions in Lead and Titanium-Modified BiFeO3 Multiferroics." Advances in Materials Science and Engineering 2021 (October 14, 2021): 1–9. http://dx.doi.org/10.1155/2021/5525158.

Full text

Abstract:

We report the synthesis and basic characterization details of bulk Bi1 − xPbxFe1 − xTixO3 (x = 0.05 and 0.1) polycrystalline samples, which have been synthesized using the conventional solid-state route. We studied the effects of partially doping of Pb and Ti ion on structural, vibrational, and magnetic properties of multiferroic BiFeO3. X-ray diffraction (XRD) was used for crystallographic studies, followed by Rietveld refinement, and phase formation of the compounds was confirmed, which indicates that the sample has rhombohedral (R3c, 100%) symmetry for x = 0.05 and R3c (98%) + P4mm (2%) symmetry for x = 0.1. X-ray absorption spectroscopy has been probed at Fe L2,3 and O K edges to determine the valence (charge) state of Fe in BiFeO3. Interestingly, the magnetic measurement results revealed the existence of spin reorientation transition in Pb and Ti-modified BiFeO3, which indicates that the BiFeO3 samples studied may find promising applications in memory and spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

49

Yang, Yuan Jun, Bin Hong, Meng Meng Yang, Liang Xin Wang, Hao He, Jiang Tao Zhao, Kai Hu, et al. "Electric-Field-Control of Non-Volatile Magnetization Switching in Multiferroic CoFeB/(011)-PMN-PT Heterostructures." Materials Science Forum 848 (March 2016): 675–81. http://dx.doi.org/10.4028/www.scientific.net/msf.848.675.

Full text

Abstract:

The giant converse magnetoelectric coupling (GME) was observed in the multiferroic Co40Fe40B20/(011)-0.7Pb (Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures at room temperature in this investigation. A tunability of magnetization by electric field along the [100] direction was up to-66.7% at-10 Oe bias magnetic fields. Moreover, the non-volatile magnetization switching was found after removal of bipolar electric field. The corresponding remanent magnetic states even without the assistance of bias magnetic fields were stable and could be modulated synchronously by a sequence of pulse electric fields. The 90o rotation of easy axis and non-symmetrical ferroelastic domain switching contributed to the above results. This work is of great significance in designing ultra-low power and non-volatile magnetoelectric memories and other spintronic devices at room temperature.

APA, Harvard, Vancouver, ISO, and other styles

50

Derras, M., and N. Hamdad. "Structural Stability and Magnetic Ordering in BiFeO3 Perovskite Oxide: A Comparative Study GGA+U vs L(S)DA+U." Annals of West University of Timisoara - Physics 62, no. 1 (December 1, 2020): 52–70. http://dx.doi.org/10.2478/awutp-2020-0004.

Full text

Abstract:

AbstractAb initio calculations of BiFeO3 magnetic perovskite are carried. Accurate density functional theory calculations were performed considering a U-Hubbard correction (DFT+U) to account for on-site Coulomb interactions of the 3d-Fe states. We have applied the Full-potential linearized augmented plane waves (FP-LAPW) method. Exchange-correlation effects are treated using the Local Spin Density approximation (L(S)DA+U) vs generalized gradient approximations (GGA+U). Equilibrium lattices agree very well with other theoretical and experimental data. The magnetization energy differences between Spin Up and Spin Dn states are small. Spin effect and magnetic moment obtained from subsequent (L(S)DA+U) and (GGA+U) calculations are also discussed in different magnetic configurations: The Ferromagnetic cubic phase (Pm-3m), The A-type Antiferromagnetic (P4/mmc) and The G-type Antiferromagnetic (Fm-3m). The nature of magnetism arises mainly from the Fe-site exhibiting a G-type antiferromagnetic ordering. The electronic structure shows that BiFeO3 has a metallic band gap. This multiferroic exhibit strong hybridization of the 3d-Fe and 2p-O orbitals. Therefore, the Multiferroic BiFeO3 perovskite has driven significant research interest due to their promising technological potential. It’s a good candidate for potential applications in spintronic, and to aid the development of the next generation of data storage and multi-functional technological devices.

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'Multiferroics - Spintronics'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles