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Journal articles on the topic 'Multicrystalline'

To see the other types of publications on this topic, follow the link: Multicrystalline.

Author: Grafiati

Published: 4 June 2021

Last updated: 28 January 2023

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1

Li, Jiao, Xiu Hua Chen, Wen Hui Ma, Cong Zhang, and Kui Xian Wei. "Effects of Cu Contamination on the Electrical Properties of Multicrystalline Silicon Purified by Directional Solidification Route." Materials Science Forum 809-810 (December 2014): 846–51. http://dx.doi.org/10.4028/www.scientific.net/msf.809-810.846.

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The multicrystalline silicon wafers purified by directional solidification route were used to introduce copper impurities. The resistivity and minority carrier lifetime of multicrystalline silicon wafers were investigated by four-point probe resistivity tester and μ-PCD, respectively. Annealing temperature, atmosphere and cooling rate were researched. It was found that copper contaminants have a greater impact on the electrical properties of multicrystalline silicon. Research results showed that copper impurities tend to exist at defect sites at high temperature, and high annealing temperature, argon atmosphere and slow cooling conditions make more impact on the electrical properties of multicrystalline silicon than low annealing temperature, air atmosphere and fast cooling.

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2

Cai, Yanhuan, Changcheng Mi, and Xinming Huang. "The Artificial Mixed Fused Quartz Particles and Silicon Particles-Assisted High-Performance Multicrystalline Silicon." Crystals 9, no. 6 (June 1, 2019): 286. http://dx.doi.org/10.3390/cryst9060286.

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Mixed seeds of fused quartz particles and silicon particles were laid at the bottom of the crucible to assist the growth of multicrystalline silicon crystals. The full melting process was used, and then we found that the grown crystals had higher quality. The effect of mixed seeds on the growth of multicrystalline silicon was studied. The results showed that fine and uniform initial grains could be obtained by mixed seeds assisting the growth of crystals. Increasing the number of grain boundaries can better release thermal stress and inhibit the proliferation and diffusion of dislocations. The defect density of multicrystalline silicon decreased and the minority carrier lifetime increased, thus improving the conversion efficiency of multicrystalline silicon cells.

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3

Coletti, Gianluca, L. J. Geerligs, P. Manshanden, C. Swanson, Stephan Riepe, Wilhelm Warta, J. Arumughan, and R. Kopecek. "Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells." Solid State Phenomena 131-133 (October 2007): 15–20. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.15.

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This paper investigates the impact of iron (Fe) and molybdenum (Mo) when they are introduced in the feedstock for mono- and multicrystalline Float-Zone (FZ) silicon (Si) growth. Neutron Activation Analysis shows that the segregation coefficient is in agreement with literature values. Lifetime maps on monocrystalline wafers show a uniform lifetime which decreases with the increase of contamination levels. Multicrystalline wafers show low lifetime areas, corresponding to grain boundaries and highly dislocated areas, which are independent from the contamination levels. Intra grain areas have a higher lifetime which changes with the contamination levels. The solar cells show a reduced diffusion length in multicrystalline uncontaminated cells compare to the monocrystalline uncontaminated. In multicrystalline cells the lowest level of Fe introduced (1012 atm/cm3) has hardly any influence, whereas in the Mo-contaminated cells the impact is visible from the lowest level (1011 atm/cm3). In monocrystalline cells the diffusion length is reduced already at the lowest contamination level of Fe.

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4

Gangopadhyay, U., K. Kim, S. K. Dhungel, H. Saha, and J. Yi. "Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell." Advances in OptoElectronics 2007 (March 30, 2007): 1–5. http://dx.doi.org/10.1155/2007/18619.

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The low-cost chemical bath deposition (CBD) technique is used to prepare CBD-ZnS films as antireflective (AR) coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize reflection loss by proper optimization of molar percentage of different chemical constituents and deposition conditions. Reasonable values of film deposition rate (12.13 Å′/min.), good film uniformity (standard deviation <1), and refractive index (2.35) along with a low percentage of average reflection (6-7%) on a textured mc-Si surface are achieved with proper optimization of ZnS bath. 12.24% efficiency on large area (125 mm × 125 mm) multicrystalline silicon solar cells with CBD-ZnS antireflection coating has been successfully fabricated. The viability of low-cost CBD-ZnS antireflection coating on large area multicrystalline silicon solar cell in the industrial production level is emphasized.

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5

Watanabe, Hiroyuki. "Overview of Cast Multicrystalline Silicon Solar Cells." MRS Bulletin 18, no. 10 (October 1993): 29–32. http://dx.doi.org/10.1557/s0883769400038252.

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Worldwide environmental problems such as the greenhouse effect and acid rain have been caused by the human race's continuous reliance on the combustion of petroleum for fuel.Solar energy, which is clean and practically unlimited, is expected to be a desirable alternate energy source to conventional power supplies, and demand for the photovoltaic system has increased throughout the world, especially in Europe and the United States.Photovoltaic cells are probably the most effective method for capturing solar energy, since they are easy to use and are the most effective means of directly generating electricity.Many kinds of solar cells have been developed in past years, especially since the first oil crisis in 1973. Among them, solar cells from cast multicrystalline silicon (also refereed to as (cast) polycrystalline silicon or semicrystalline silicon) are considered to be one of the most promising types, capable of achieving both high efficiency and low cost.In 1975, Wacker proposed a new manufacturing method for silicon substrates, using the casting method. Since then, many organizations have been involved in the research and development of multicrystalline ingots and solar cells using multicrystalline silicon substrates.Multicrystalline silicon substrates contain many kinds of defects compared to single-crystal silicon substrates, so the efficiency of multicrystalline silicon solar cells has been inferior to that of single-crystal cells. Recent research on multicrystalline silicon solar cells has resulted in substantial improvements and in the demonstration of high-efficiency cells.

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6

Wang, Shaoliang, Xianfang Gou, Su Zhou, Junlin Huang, Qingsong Huang, Jialiang Qiu, Zheng Xu, and Honglie Shen. "Effect of Surface Structure on Electrical Performance of Industrial Diamond Wire Sawing Multicrystalline Si Solar Cells." International Journal of Photoenergy 2018 (2018): 1–4. http://dx.doi.org/10.1155/2018/7947015.

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We report industrial fabrication of different kinds of nanostructured multicrystalline silicon solar cells via normal acid texturing, reactive ion etching (RIE), and metal-assisted chemical etching (MACE) processes on diamond wire sawing wafer. The effect of different surface structure on reflectivity, lifetime, and electrical performance was systematically studied in this paper. The difference between industrial acid, RIE, and MACE textured multicrystalline silicon solar cells to our knowledge has not been investigated previously. The resulting efficiency indicates that low reflectivity surface structure with the size of 0.2–0.8 μm via RIE and MACE process do not always lead to low lifetime compared with acid texturing process. Both RIE and MACE process is promising candidate for high efficiency processes for future industrial diamond wire sawing multicrystalline silicon solar cells.

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7

Schindler, R., and A. Räuber. "Defects in Multicrystalline Silicon." Solid State Phenomena 19-20 (January 1991): 341–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.19-20.341.

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8

Ehret, E. "Characterization of multicrystalline silicon:." Solar Energy Materials and Solar Cells 53, no. 3-4 (June 1998): 313–27. http://dx.doi.org/10.1016/s0927-0248(98)00022-1.

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9

Wang, Enyu, He Wang, and Hong Yang. "Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells." International Journal of Photoenergy 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/8982376.

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At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.

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10

Gao, Bing, Satoshi Nakano, and Koichi Kakimoto. "Reduction of Oxygen Impurity in Multicrystalline Silicon Production." International Journal of Photoenergy 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/908786.

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Effective control of oxygen impurity in multicrystalline silicon is required for the production of a high-quality crystal. The basic principle and some techniques for reducing oxygen impurity in multicrystalline silicon during the unidirectional solidification process are described in this paper. The oxygen impurity in multicrystalline silicon mainly originates from the silica crucible. To effectively reduce the oxygen impurity, it is essential to reduce the oxygen generation and enhance oxygen evaporation. For reduction of oxygen generation, it is necessary to prevent or weaken any chemical reaction with the crucible, and for the enhancement of oxygen evaporation, it is necessary to control convection direction of the melt and strengthen gas flow above the melt. Global numerical simulation, which includes heat transfer in global furnace, argon gas convection inside furnace, and impurity transport in both melt and gas regions, has been implemented to validate the above methods.

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11

Sun, Shi Hai, Yi Tan, Hui Xing Zhang, Wei Dong, Jun Shan Zhang, and Gen Xiong Hu. "Effect of Pulling Rate on Multicrystalline Silicon Ingot during Directional Solidification." Materials Science Forum 675-677 (February 2011): 53–56. http://dx.doi.org/10.4028/www.scientific.net/msf.675-677.53.

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In this paper, the structure and composition of multicrystalline silicon ingots prepared by directional solidification with different pulling rates were analyzed to investigate the effect of pulling rate on the multicrystalline silicon ingot. The results showed that the lower pulling rate will make the site taking place constitutional supercooling move to the upper part of ingots and make the high purity area become larger. Lowering the pulling rate will decrease the impurity effective segregation coefficient and the solid-liquid interface curvature.

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12

Chen, Jun, Ronit R. Prakash, Jian Yong Li, Karolin Jiptner, Yoshiji Miyamura, Hirofumi Harada, Atsushi Ogura, and Takashi Sekiguchi. "Analysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si." Solid State Phenomena 205-206 (October 2013): 77–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.77.

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Grain boundaries and dislocations are major crystallographic defects in multicrystalline Si materials for solar cells. Heavily dislocated grains are detrimental to the photovoltaic performance. This paper attempts to clarify the origin of inhomogeneous defect distribution in multicrystalline Si. The impacts of crystal orientation and grain boundary were investigated. The crystal orientation gives an important geometrical effect in the possibility of initiating slip in a grain when subjected to stress. The presence of grain boundary can also affect dislocation distribution depending on boundary character.

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13

Macdonald, Daniel, Thomas Roth, L. J. Geerligs, and Andres Cuevas. "Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers." Solid State Phenomena 108-109 (December 2005): 519–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.519.

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Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered ‘fast’, meaning the interstitial Fe had no time to diffuse to precipitation sites, and should therefore be frozen-in, despite being far above the solubility limit at lower temperatures. A second ‘slow’ cool down to 650°C allowed ample time for the Fe to reach the surfaces or other internal precipitation sites. Surprisingly, in both cases the Fe remained in a supersaturated state. This indicates the precipitation process is not diffusion-limited, and that another energetic barrier to precipitate formation must be present. Since the slow cooling used here is similar to the cooling rate experienced by multicrystalline ingots after crystallisation, this precipitate-impeding mechanism is probably responsible for the surprisingly high interstitial Fe concentrations often found in as-grown multicrystalline silicon wafers.

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14

Litvinov, Vladimir G., Nikolay V. Vishnyakov, Valery V. Gudzev, Nikolay B. Rybin, Dmitry S. Kusakin, Alexander V. Ermachikhin, Sergey M. Karabanov, Sergey P. Vikhrov, Andrey S. Karabanov, and Evgeny V. Slivkin. "Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Si-based Solar Cells." MRS Advances 1, no. 14 (2016): 911–16. http://dx.doi.org/10.1557/adv.2016.42.

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ABSTRACTThe influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.

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15

Haarahiltunen, Antti, Ville Vähänissi, Marko Yli-Koski, H. Talvitie, and Hele Savin. "Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon." Solid State Phenomena 156-158 (October 2009): 27–33. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.27.

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Iron precipitation in multicrystalline silicon has been modeled aiming at the optimization of intrinsic gettering of iron in multicrystalline silicon. Iron precipitation during both crystal growth and following phosphorus diffusion gettering (PDG) are simulated and compared to experimental results as the iron precipitate density after these processes is essential in the modeling of intrinsic gettering in multicrystalline silicon solar cell processing. The PDG decreases the density of iron precipitates compared to the as-grown state and as expected the effect is larger at lower initial iron concentrations. Due to this effect the iron precipitation is significantly reduced almost throughout the whole ingot height and it can be concluded that intrinsic gettering has a beneficial effect only in the case of high initial iron concentration, in accordance with the experimental results. The simulated change in interstitial iron concentration as a function of intrinsic gettering temperature suggests the same optimum intrinsic gettering temperature as the experiments. With the given model it is however much easier to find optimal parameters compared to expensive and time consuming experiments.

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16

Bertoni, Mariana I., Clémence Colin, and Tonio Buonassisi. "Dislocation Engineering in Multicrystalline Silicon." Solid State Phenomena 156-158 (October 2009): 11–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.11.

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Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

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17

Chen, Jun, Bin Chen, Woong Lee, Masayuki Fukuzawa, Masayoshi Yamada, and Takashi Sekiguchi. "Grain Boundaries in Multicrystalline Si." Solid State Phenomena 156-158 (October 2009): 19–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.19.

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We report the electrical, structural and mechanical properties of grain boundaries (GBs) in multicrystalline Si (mc-Si) based on electron-beam-induced current (EBIC), transmission electron microscope (TEM), and scanning infrared polariscope (SIRP) characterizations. The recombination activities of GBs are clearly classified with respect to GB character and Fe contamination level. The decoration of Fe impurity at boundary has been approved by annular dark field (ADF) imaging in TEM. Finally, the distribution of residual strain around GBs, and the correlations between strain and electrical properties are discussed.

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18

Möller, Hans Joachim. "Multicrystalline Silicon for Solar Cells." Solid State Phenomena 47-48 (July 1995): 127–42. http://dx.doi.org/10.4028/www.scientific.net/ssp.47-48.127.

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19

Ferrazza, Francesca. "Large size multicrystalline silicon ingots." Solar Energy Materials and Solar Cells 72, no. 1-4 (April 2002): 77–81. http://dx.doi.org/10.1016/s0927-0248(01)00152-0.

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20

Schindler, F., J. Geilker, W. Kwapil, W. Warta, and M. C. Schubert. "Hall mobility in multicrystalline silicon." Journal of Applied Physics 110, no. 4 (August 15, 2011): 043722. http://dx.doi.org/10.1063/1.3622620.

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21

Möller, H. J., C. Funke, M. Rinio, and S. Scholz. "Multicrystalline silicon for solar cells." Thin Solid Films 487, no. 1-2 (September 2005): 179–87. http://dx.doi.org/10.1016/j.tsf.2005.01.061.

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22

Möller, H. J., C. Funke, D. Kreßner-Kiel, and S. Würzner. "Growth optimization of multicrystalline silicon." Energy Procedia 3 (2011): 2–12. http://dx.doi.org/10.1016/j.egypro.2011.01.002.

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23

Malik, A. Q., Chong Chew Hah, Chan Siang Khwang, Lim Chee Ming, and Tan Kha Sheng. "Characterisation of multicrystalline solar cells." ASEAN Journal on Science and Technology for Development 23, no. 1&2 (October 30, 2017): 97. http://dx.doi.org/10.29037/ajstd.96.

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The evaluation and assessment of the performance of photovoltaic (PV) cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Mo st noticeable of all these parameters is the PV conversion efficiency η, defined as the maximum electrical power Pmax produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (STC). These conditions refer to the spectrum (AM 1.5), solar radiation intensity (1000 Wm-2), cell temperature (25 ±2oC) and wind speed (2 mph). Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstratethat the short circuit current (ISC) of the solar cell decreases when irradiance is less than 1000 Wm-2 irrespective of the working temperature of the cell.

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24

Hara, Kohjiro, Sachiko Jonai, and Atsushi Masuda. "Crystalline Si photovoltaic modules functionalized by a thin polyethylene film against potential and damp-heat-induced degradation." RSC Advances 5, no. 20 (2015): 15017–23. http://dx.doi.org/10.1039/c4ra13360a.

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25

Sui, Xiaoxiao, Yongjian Cheng, Naigen Zhou, Binbing Tang, and Lang Zhou. "Molecular dynamics simulation of the solidification process of multicrystalline silicon from homogeneous nucleation to grain coarsening." CrystEngComm 20, no. 25 (2018): 3569–80. http://dx.doi.org/10.1039/c8ce00767e.

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26

Kulesza, G., P. Panek, and P. Zieba. "Silicon Solar Cells Efficiency Improvement by the Wet Chemical Texturization in the HF/HNO3/Diluent Solution / Poprawa Sprawnosci Krzemowych Ogniw Słonecznych Poprzez Chemiczna Tekturyzacje W Roztworach HF/HNO3/Rozpuszczalnik." Archives of Metallurgy and Materials 58, no. 1 (March 1, 2013): 291–95. http://dx.doi.org/10.2478/v10172-012-0188-z.

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The paper presents the results of the texturization process of the multicrystalline silicon wafers carried out in ternary HF/HNO3/diluent solution, where the diluent was either CH3COOH or H2O, at varying HF/HNO3 volume ratio and different time of texturization process. The technique of scanning electron microscopy was used to characterize the morphology of the obtained multicrystalline silicon surfaces, with subsequent surface reflectivity measurements. The appropriate selection of mixture components lead to a significant reduction in the reflectivity of the incident solar radiation in the relatively short time of 60 seconds. The resultant electric parameters were nearly the same as those for the commercial samples but obtained after 3 minutes.

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27

Li, Jianjiang, Jingjiao Zhang, Liang Fang, Junling Wang, Mingrong Shen, and Xiaodong Su. "Enhanced visible light photocatalytic properties of TiO2 thin films on the textured multicrystalline silicon wafers." Journal of Materials Chemistry A 3, no. 9 (2015): 4903–8. http://dx.doi.org/10.1039/c4ta06564f.

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28

Litvinov, Vladimir G., Alexander V. Ermachikhin, Dmitry S. Kusakin, Nikolay V. Vishnyakov, Valery V. Gudzev, Andrey S. Karabanov, Sergey M. Karabanov, and Sergey P. Vikhrov. "Investigation of Deep-Level Defects Lateral Distribution in Active Layers of Multicrystalline Silicon Solar Cells." MRS Advances 2, no. 53 (2017): 3141–46. http://dx.doi.org/10.1557/adv.2017.376.

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ABSTRACTThe influence of deep level defects lateral distribution in active layers of multicrystalline Si-based standard solar cells is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. One type of solar cells with conversion efficiency 20.4% was studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). From various places along the diagonal of solar cell’s substrate with 20.4% efficiency nine pieces with an area ∼20 mm2 were extracted and studied. I-DLTS spectra of the five pieces from solar cell were measured. The features of deep levels defects concentration lateral distribution along the SC’s surface were studied.

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29

Martinuzzi, Santo, and Isabelle Périchaud. "External Gettering for Multicrystalline Silicon Wafers." Solid State Phenomena 47-48 (July 1995): 153–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.47-48.153.

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30

Yang, De Ren, and Hans Joachim Möller. "Oxygen Annealing Behavior in Multicrystalline Silicon." Solid State Phenomena 82-84 (November 2001): 707–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.82-84.707.

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31

Möller, Hans Joachim. "Carbon-Induced Twinning in Multicrystalline Silicon." Solid State Phenomena 95-96 (September 2003): 181–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.95-96.181.

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32

Popov, V. G. "Solar cells based on multicrystalline silicon." Semiconductor Physics, Quantum Electronics and Optoelectronics 3, no. 4 (December 12, 2000): 479–88. http://dx.doi.org/10.15407/spqeo3.04.479.

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33

Cuevas, A., M. Stocks, D. McDonald, M. Kerr, and C. Samundsett. "Recombination and trapping in multicrystalline silicon." IEEE Transactions on Electron Devices 46, no. 10 (1999): 2026–34. http://dx.doi.org/10.1109/16.791992.

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34

Nepomnyashchikh, A. I., and R. V. Presnyakov. "Impurity Distribution in Multicrystalline Silicon Growth." Inorganic Materials 54, no. 4 (April 2018): 315–18. http://dx.doi.org/10.1134/s0020168518040106.

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35

Macdonald, D. H., A. Cuevas, M. J. Kerr, C. Samundsett, D. Ruby, S. Winderbaum, and A. Leo. "Texturing industrial multicrystalline silicon solar cells." Solar Energy 76, no. 1-3 (January 2004): 277–83. http://dx.doi.org/10.1016/j.solener.2003.08.019.

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36

Macdonald, Daniel, and Andrés Cuevas. "Understanding carrier trapping in multicrystalline silicon." Solar Energy Materials and Solar Cells 65, no. 1-4 (January 2001): 509–16. http://dx.doi.org/10.1016/s0927-0248(00)00134-3.

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37

Yang, Deren, Dongsheng Li, M. Ghosh, and H. J. Möller. "Defects in nitrogen-doped multicrystalline silicon." Physica B: Condensed Matter 344, no. 1-4 (February 2004): 1–4. http://dx.doi.org/10.1016/j.physb.2003.10.027.

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38

Yang, Deren, Liben Li, Xiangyang Ma, Ruixin Fan, Duanlin Que, and H. J. Moeller. "Oxygen-related centers in multicrystalline silicon." Solar Energy Materials and Solar Cells 62, no. 1-2 (April 2000): 37–42. http://dx.doi.org/10.1016/s0927-0248(99)00133-6.

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39

Manshanden, P., and L. J. Geerligs. "Improved phosphorous gettering of multicrystalline silicon." Solar Energy Materials and Solar Cells 90, no. 7-8 (May 2006): 998–1012. http://dx.doi.org/10.1016/j.solmat.2005.05.015.

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40

Beaudhuin, M., K. Zaidat, T. Duffar, and M. Lemiti. "Impurities influence on multicrystalline photovoltaic Silicon." Transactions of the Indian Institute of Metals 62, no. 4-5 (October 2009): 505–9. http://dx.doi.org/10.1007/s12666-009-0065-2.

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41

Gundel, Paul, Martin C. Schubert, and Wilhelm Warta. "Origin of trapping in multicrystalline silicon." Journal of Applied Physics 104, no. 7 (2008): 073716. http://dx.doi.org/10.1063/1.2990053.

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42

Rohatgi, A., Z. Chen, P. Sana, J. Crotty, and J. Salami. "High efficiency multicrystalline silicon solar cells." Solar Energy Materials and Solar Cells 34, no. 1-4 (September 1994): 227–36. http://dx.doi.org/10.1016/0927-0248(94)90044-2.

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43

Chung, Daniel, Bernhard Mitchell, Jürgen W. Weber, Neil Yager, and Thorsten Trupke. "Photoluminescence imaging for quality control in silicon solar cell manufacturing." MRS Advances 1, no. 48 (2016): 3247–56. http://dx.doi.org/10.1557/adv.2016.424.

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ABSTRACTWe report on progress with PL imaging applications in silicon solar cell production, specifically focusing on the characterization of silicon bricks prior to wafer cutting. Silicon bricks represent an ideal opportunity to characterize and quantify the electronic material quality at an early stage of the PV value chain. Quantitative data on bulk lifetime can be obtained on bricks without any specific sample preparation, unlike unprocessed wafers. Spatially resolved bulk lifetime, interstitial iron concentration, and defect density measurements are demonstrated on bricks from different manufacturers including both high performance multicrystalline and older generation multicrystalline bricks. We find significant variability in bulk lifetime and iron concentration across the samples which is not related to its date of manufacture. However we do see a qualitative reduction in crystallographic defects in the newer high performance multicrystalline bricks. Data is parameterized in different ways to suggest possible paths to better predict solar cell efficiencies from an early stage of inspection.Brick level PL measurements were previously performed using a conventional area scanning PL imaging system, which is associated with light spreading artefacts of weakly absorbed light. To overcome these artefacts, a new line scanning photoluminescence imaging system is used. We show a reduction in contrast smearing between high- and low lifetime regions in the new setup leading to image quality suitable for defect detection and quantitative measurements without deconvolution correction.

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Mahmoudi, Bedra, Ahmed Mouhoub, Brahim Mahmoudi, Hamid Menari, and Abdennour Mougas. "Optical Properties of Chemical Vapour Etching Based Porous Silicon for Multicrystalline Solar Cells." Advanced Engineering Forum 23 (July 2017): 56–62. http://dx.doi.org/10.4028/www.scientific.net/aef.23.56.

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In this paper, we report a study on the possibility of fabricating porous silicon by exposing a multicrystalline silicon surface to gaseous etchants. The structural and optical properties of porous silicon (PS) layers prepared by vapour –etching (VE) are investigated. FTIR analysis confirms the existence of hydrogen incorporation bonding to the silicon atoms. Photoluminescence measurements reveal an efficient emission around 640 nm. The optical behaviour in the 350-1000 nm wavelength range was determined before and after PS formation, resulting in a notable reduction of reflectance and an enlargement of low reflectance region into short wavelengths and near IR region after PS formation. A significant increase of the quantum efficiency particularly in the short wavelength region is observed. The results make the use of such thin film very promising for multicrystalline silicon solar cell application.

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Li, Yang, Zhongtian Li, Yuebin Zhao, and Alison Lennon. "Modelling of Light Trapping in Acidic-Textured Multicrystalline Silicon Wafers." International Journal of Photoenergy 2012 (2012): 1–8. http://dx.doi.org/10.1155/2012/369101.

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Acidic texturing has been widely used to reduce the reflection losses for silicon solar cells fabricated on multicrystalline wafers, however, there are few available models which attempt to predict the reduced reflection after texturing based on the morphology of the textured surfaces. An optical model which simulates the light trapping and scattering effects of acidic-textured surfaces based on the surface morphology is presented. The developed model was experimentally verified by reflection measurements from multicrystalline silicon wafers textured using different etching conditions. The relationship between weighted average reflection and surface morphology is demonstrated with some of the trends being explained by simulating reflection in different wavelength regions. The developed model could be embedded into solar cell simulation tools or adapted to predict optical properties of diverse surface morphologies.

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Swatowska, Barbara, Piotr Panek, Dagmara Michoń, and Aleksandra Drygała. "The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells." Microelectronics International 36, no. 3 (July 1, 2019): 90–94. http://dx.doi.org/10.1108/mi-04-2019-0019.

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Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

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Jiang, Yong, Wen Hui Ma, Kui Xian Wei, Yang Zhou, Xiang Yang Mei, Bin Yang, and Yong Nian Dai. "Study of Dislocation Generation and Growth Orientations in Upgraded Metallurgical Grade Multicrystalline Silicon." Advanced Materials Research 287-290 (July 2011): 1559–64. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1559.

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We used high-purity multicrystalline silicon prepared by metallurgical method for the study of directional solidification. The optical microscope was used to observe the etch pits on the surface of silicon wafers, and we calculated their dislocation density. The result showed the space distribution of dislocation density presented “V” shape for each ingot produced at different drop-down rates. The dislocation density of slicon ingots followed the order 10<20<30<40μm/s. The high-resolution glow discharge mass spectroscopy was used to analyze the concentration of transition metal impurities. The macro-morphology of vertical-section of silicon ingots growth at different drop-down rates was observed. The x-ray diffraction measurement was performed to analyze the crystallographic orientations of the silicon ingot growth at 20μm/s, which was a better drop-down rate for producing high-quality multicrystalline silicon.

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Ait-Hamouda, Kahina, A. Ababou, and N. Gabouze. "Optimization of DLC/PS Antireflection Coating Properties for Multicrystalline Silicon Solar Cells." Materials Science Forum 609 (January 2009): 179–82. http://dx.doi.org/10.4028/www.scientific.net/msf.609.179.

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In this work, we report on the results of using a Diamond-Like Carbon / Porous Silicon (DLC/PS) double layer as antireflection coating to enhance the performance of multicrystalline silicon photovoltaic cells. DLC layers were obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The properties of these layers were investigated in order to establish the optimum preparation conditions for solar cell applications. Then, thin films of combined porous silicon-DLC structure were fabricated for antireflection coating use. The spectral response of a solar cell based on multicrystalline silicon (mc-Si) coated with a PS layer, formed by electrochemical process was enhanced compared to a cell without porous silicon layer as emitter. Further improvements are obtained by a deposition of a thin DLC film. The results of the solar cell parameters before and after porous silicon formation and DLC coating are discussed.

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Basu, Prabir Kanti, Joel Li, Vinodh Shanmugam, and Ankit Khanna. "Heavy phosphorous tube-diffusion and non-acidic deep chemical etch-back assisted efficiency enhancement of industrial multicrystalline silicon wafer solar cells." RSC Advances 6, no. 42 (2016): 35928–35. http://dx.doi.org/10.1039/c5ra26794c.

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An industrial process for tube-diffused multicrystalline silicon (multi-Si) solar cells using phosphorus gettering. A cell efficiency gain of 0.5% (absolute) is achieved with heavy chemical etch-back when compared to the as-diffused cells with same final emitter.

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McHugo, Scott A., H. Hieslmair, and Eicke R. Weber. "Gettering of Transition Metals in Multicrystalline Silicon." Materials Science Forum 196-201 (November 1995): 1979–84. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.1979.

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