Relevant bibliographies by topics / Multicrystalline

Academic literature on the topic 'Multicrystalline'

Author: Grafiati
Published: 4 June 2021
Last updated: 28 January 2023

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Journal articles on the topic "Multicrystalline"

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Li, Jiao, Xiu Hua Chen, Wen Hui Ma, Cong Zhang, and Kui Xian Wei. "Effects of Cu Contamination on the Electrical Properties of Multicrystalline Silicon Purified by Directional Solidification Route." Materials Science Forum 809-810 (December 2014): 846–51. http://dx.doi.org/10.4028/www.scientific.net/msf.809-810.846.

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The multicrystalline silicon wafers purified by directional solidification route were used to introduce copper impurities. The resistivity and minority carrier lifetime of multicrystalline silicon wafers were investigated by four-point probe resistivity tester and μ-PCD, respectively. Annealing temperature, atmosphere and cooling rate were researched. It was found that copper contaminants have a greater impact on the electrical properties of multicrystalline silicon. Research results showed that copper impurities tend to exist at defect sites at high temperature, and high annealing temperature, argon atmosphere and slow cooling conditions make more impact on the electrical properties of multicrystalline silicon than low annealing temperature, air atmosphere and fast cooling.
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Cai, Yanhuan, Changcheng Mi, and Xinming Huang. "The Artificial Mixed Fused Quartz Particles and Silicon Particles-Assisted High-Performance Multicrystalline Silicon." Crystals 9, no. 6 (June 1, 2019): 286. http://dx.doi.org/10.3390/cryst9060286.

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Mixed seeds of fused quartz particles and silicon particles were laid at the bottom of the crucible to assist the growth of multicrystalline silicon crystals. The full melting process was used, and then we found that the grown crystals had higher quality. The effect of mixed seeds on the growth of multicrystalline silicon was studied. The results showed that fine and uniform initial grains could be obtained by mixed seeds assisting the growth of crystals. Increasing the number of grain boundaries can better release thermal stress and inhibit the proliferation and diffusion of dislocations. The defect density of multicrystalline silicon decreased and the minority carrier lifetime increased, thus improving the conversion efficiency of multicrystalline silicon cells.
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Coletti, Gianluca, L. J. Geerligs, P. Manshanden, C. Swanson, Stephan Riepe, Wilhelm Warta, J. Arumughan, and R. Kopecek. "Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells." Solid State Phenomena 131-133 (October 2007): 15–20. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.15.

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This paper investigates the impact of iron (Fe) and molybdenum (Mo) when they are introduced in the feedstock for mono- and multicrystalline Float-Zone (FZ) silicon (Si) growth. Neutron Activation Analysis shows that the segregation coefficient is in agreement with literature values. Lifetime maps on monocrystalline wafers show a uniform lifetime which decreases with the increase of contamination levels. Multicrystalline wafers show low lifetime areas, corresponding to grain boundaries and highly dislocated areas, which are independent from the contamination levels. Intra grain areas have a higher lifetime which changes with the contamination levels. The solar cells show a reduced diffusion length in multicrystalline uncontaminated cells compare to the monocrystalline uncontaminated. In multicrystalline cells the lowest level of Fe introduced (1012 atm/cm3) has hardly any influence, whereas in the Mo-contaminated cells the impact is visible from the lowest level (1011 atm/cm3). In monocrystalline cells the diffusion length is reduced already at the lowest contamination level of Fe.
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Gangopadhyay, U., K. Kim, S. K. Dhungel, H. Saha, and J. Yi. "Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell." Advances in OptoElectronics 2007 (March 30, 2007): 1–5. http://dx.doi.org/10.1155/2007/18619.

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The low-cost chemical bath deposition (CBD) technique is used to prepare CBD-ZnS films as antireflective (AR) coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize reflection loss by proper optimization of molar percentage of different chemical constituents and deposition conditions. Reasonable values of film deposition rate (12.13 Å′/min.), good film uniformity (standard deviation <1), and refractive index (2.35) along with a low percentage of average reflection (6-7%) on a textured mc-Si surface are achieved with proper optimization of ZnS bath. 12.24% efficiency on large area (125 mm × 125 mm) multicrystalline silicon solar cells with CBD-ZnS antireflection coating has been successfully fabricated. The viability of low-cost CBD-ZnS antireflection coating on large area multicrystalline silicon solar cell in the industrial production level is emphasized.
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Watanabe, Hiroyuki. "Overview of Cast Multicrystalline Silicon Solar Cells." MRS Bulletin 18, no. 10 (October 1993): 29–32. http://dx.doi.org/10.1557/s0883769400038252.

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Worldwide environmental problems such as the greenhouse effect and acid rain have been caused by the human race's continuous reliance on the combustion of petroleum for fuel.Solar energy, which is clean and practically unlimited, is expected to be a desirable alternate energy source to conventional power supplies, and demand for the photovoltaic system has increased throughout the world, especially in Europe and the United States.Photovoltaic cells are probably the most effective method for capturing solar energy, since they are easy to use and are the most effective means of directly generating electricity.Many kinds of solar cells have been developed in past years, especially since the first oil crisis in 1973. Among them, solar cells from cast multicrystalline silicon (also refereed to as (cast) polycrystalline silicon or semicrystalline silicon) are considered to be one of the most promising types, capable of achieving both high efficiency and low cost.In 1975, Wacker proposed a new manufacturing method for silicon substrates, using the casting method. Since then, many organizations have been involved in the research and development of multicrystalline ingots and solar cells using multicrystalline silicon substrates.Multicrystalline silicon substrates contain many kinds of defects compared to single-crystal silicon substrates, so the efficiency of multicrystalline silicon solar cells has been inferior to that of single-crystal cells. Recent research on multicrystalline silicon solar cells has resulted in substantial improvements and in the demonstration of high-efficiency cells.
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Wang, Shaoliang, Xianfang Gou, Su Zhou, Junlin Huang, Qingsong Huang, Jialiang Qiu, Zheng Xu, and Honglie Shen. "Effect of Surface Structure on Electrical Performance of Industrial Diamond Wire Sawing Multicrystalline Si Solar Cells." International Journal of Photoenergy 2018 (2018): 1–4. http://dx.doi.org/10.1155/2018/7947015.

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We report industrial fabrication of different kinds of nanostructured multicrystalline silicon solar cells via normal acid texturing, reactive ion etching (RIE), and metal-assisted chemical etching (MACE) processes on diamond wire sawing wafer. The effect of different surface structure on reflectivity, lifetime, and electrical performance was systematically studied in this paper. The difference between industrial acid, RIE, and MACE textured multicrystalline silicon solar cells to our knowledge has not been investigated previously. The resulting efficiency indicates that low reflectivity surface structure with the size of 0.2–0.8 μm via RIE and MACE process do not always lead to low lifetime compared with acid texturing process. Both RIE and MACE process is promising candidate for high efficiency processes for future industrial diamond wire sawing multicrystalline silicon solar cells.
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Schindler, R., and A. Räuber. "Defects in Multicrystalline Silicon." Solid State Phenomena 19-20 (January 1991): 341–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.19-20.341.

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Ehret, E. "Characterization of multicrystalline silicon:." Solar Energy Materials and Solar Cells 53, no. 3-4 (June 1998): 313–27. http://dx.doi.org/10.1016/s0927-0248(98)00022-1.

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Wang, Enyu, He Wang, and Hong Yang. "Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells." International Journal of Photoenergy 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/8982376.

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At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.
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Gao, Bing, Satoshi Nakano, and Koichi Kakimoto. "Reduction of Oxygen Impurity in Multicrystalline Silicon Production." International Journal of Photoenergy 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/908786.

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Effective control of oxygen impurity in multicrystalline silicon is required for the production of a high-quality crystal. The basic principle and some techniques for reducing oxygen impurity in multicrystalline silicon during the unidirectional solidification process are described in this paper. The oxygen impurity in multicrystalline silicon mainly originates from the silica crucible. To effectively reduce the oxygen impurity, it is essential to reduce the oxygen generation and enhance oxygen evaporation. For reduction of oxygen generation, it is necessary to prevent or weaken any chemical reaction with the crucible, and for the enhancement of oxygen evaporation, it is necessary to control convection direction of the melt and strengthen gas flow above the melt. Global numerical simulation, which includes heat transfer in global furnace, argon gas convection inside furnace, and impurity transport in both melt and gas regions, has been implemented to validate the above methods.
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Dissertations / Theses on the topic "Multicrystalline"

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Gebregiorgis, Ashenafi Weldemariam. "Local Resistivity Measurement on Multicrystalline Silicon." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-19278.

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Even though in the past the photovoltaic industry was dominated by single-crystalline silicon this days multi-crystalline silicon is consider to be on of the most promising material for application in low manufacturing cost solar photovoltaic arrays, consequently it has a huge potential to dominate the single-crystalline silicon in the photovoltaic industry in the next decades. However the presence of crystal defects such as dislocation and grain boundaries in multi-crystalline solar cells hugely reducing the conversion efficiency of this material compared to single crystalline silicon solar cell. Hence realizing the widespread utilization of this material will require understanding and control of the effects of this defects on the photovoltaic cell performance. Therefor we will examine the local resistivity of a given multi-crystalline sample in a dark and how it is affected by the presence of grain boundaries and the electrical activity when we cross or with in the grain boundary or twin boundaries. We have measured the resistivity of a number of samples of multi-crystalline silicon using a multi-height four-point probe.
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Schultz, Oliver. "High-efficiency multicrystalline silicon solar cells." München Verl. Dr. Hut, 2005. http://deposit.d-nb.de/cgi-bin/dokserv?idn=977880567.

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Li, Dai-Yin. "Texturization of multicrystalline silicon solar cells." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/64615.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 103-111).
A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create a honeycomb texture. Two distinct approaches for surface texturization were studied. The first approach was photo-defined etching. For this approach, the research focus was to take advantage of Vall6ra's technique published in 1999, which demonstrated a high-contrast surface texture on p-type silicon created by photo-suppressed etching. Further theoretical consideration, however, led to a conclusion that diffusion of bromine in the electrolyte impacts the resolution achievable with Vallera's technique. Also, diffusion of photocarriers may impose an additional limitation on the resolution. The second approach studied was based on soft lithography. For this approach, a texturization process sequence that created a honeycomb texture with 20 ptm spacing on polished wafers at low cost and high throughput was developed. Novel techniques were incorporated in the process sequence, including surface wettability patterning by microfluidic lithography and selective condensation based on Raoult's law. Microfluidic lithography was used to create a wettability pattern from a 100A oxide layer, and selective condensation based on Raoult's law was used to reliably increase the thickness of the glycerol/water liquid film entrained on hydrophilic oxide islands approximately from 0.2 pm to 2.5 pm . However, there remain several areas that require further development to make the process sequence truly successful, especially when applied to multicrystalline wafers.
by Dai-Yin Li.
Ph.D.
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Vecchi, Pierpaolo. "Defect analysis in directionally solidified multicrystalline silicon." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020. http://amslaurea.unibo.it/21177/.

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This project studies how the microstructure and metallic impurities affect the electrical properties of mc-Si wafers, to improve the efficiency and the production yield of photovoltaic solar cells. Dislocations and impurities in silicon are recombination centres that reduce free carrier lifetime and thus efficiency of solar cells. The quality of the material can be improved by finding optimal growth conditions and a threshold value for the contamination that does not compromise the device efficiency. Two sets of p-type mc-Si wafers located at different heights and lateral positions of two directionally solidified ingots, one contaminated with iron and one with aluminum, were analysed with several characterization techniques. The two ingots show similar microstructure, but the top of the iron contaminated ingot has a significantly lower lifetime, as it contains more dislocation clusters decorated with segregated iron. Aluminum is less detrimental at this low concentration level and it is more homogeneously distributed along the ingot height. A Mott-Schottky analysis after evaporation of aluminum contacts confirmed the p-type nature of the samples and estimated the free charge carrier concentration. Current profiles and local I-V curves measured with Conductive Atomic Force Microscopy show that decorated grain boundaries are a preferential path for electrical conduction compared to the grain regions and iron precipitates affect more heavily the electrical properties of the wafer compared to aluminum precipitates. The shape of the current profile at the boundary was justified with a theoretical model that assumes a redistribution of charge density due to a Coulombic potential introduced by a spherical and positively charged precipitate, that can be identified with b-FeSi2. The results from this characterization show that metallic contamination at grain boundaries in Si is responsible for enhanced free carrier recombination and thus efficiency reduction in mc-Si cells.
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Macdonald, Daniel Harold, and daniel@faceng anu edu au. "Recombination and Trapping in Multicrystalline Silicon Solar Cells." The Australian National University. Faculty of Engineering and Information Technology, 2001. http://thesis.anu.edu.au./public/adt-ANU20011218.134830.

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In broad terms, this thesis is concerned with the measurement and interpretation of carrier lifetimes in multicrystalline silicon. An understanding of these lifetimes in turn leads to a clearer picture of the limiting mechanisms in solar cells made with this promising material, and points to possible paths for improvement. The work falls into three broad categories: gettering, trapping and recombination. A further section discusses a powerful new technique for characterising impurities in semiconductors in general, and provides an example of its application. Gettering of recombination centres in multicrystalline silicon wafers improves the bulk lifetime, often considerably. Although not employed deliberately in most commercial cell processes, gettering nevertheless occurs to some extent during emitter formation, and so may have an important impact on cell performance. However, the response of different wafers to gettering is quite variable, and in some cases is non-existent. Work in this thesis shows that the response to gettering is best when the dislocation density is low and the density of mobile impurities is high. For Eurosolare material these conditions prevail at the bottom and to a lesser extent in the middle of an ingot. However, these conclusions can not always be applied to multicrystalline silicon produced by other manufacturers. Low resistivity multicrystalline silicon suffers from a concurrent thermally induced degradation of the lifetime. This had previously been attributed to the dissolution of precipitated metals, although we note that the crystallographic quality also appears to deteriorate. The thermal degradation effect results in an optimum gettering time for low resistivity material. Edge-defined Film-fed Growth (EFG) ribbon silicon was also found to respond to gettering, and even more so to bulk hydrogenation. Evidence for Cu contamination in the as-grown EFG wafers is presented. Multicrystalline silicon is often plagued by trapping effects, which can make lifetime measurement in the injection-level range of interest very difficult, and sometimes impossible. An old model based on centres that trap and release minority carriers, but do not interact with majority carriers, was found to provide a good explanation for these effects. These trapping states were linked with the presence of dislocations and also with boron-impurity complexes. Their annealing behaviour and lack of impact on device parameters can be explained in terms of the models developed. The trapping model allowed a recently proposed method for correcting trap-affected data to be tested using typical values of the trapping parameters. The correction method was found to extend the range of useable data to approximately an order of magnitude lower in terms of carrier density than would be available otherwise, an improvement that could prove useful in many practical cases. High efficiency PERL and PERC cells made on gettered multicrystalline silicon resulted in devices with open circuit voltages in the 640mV range that were almost entirely limited by bulk recombination. Furthermore, the injection-level dependence of the bulk lifetime resulted in decreased fill factors. Modelling showed that these effects are even more pronounced for cells dominated by interstitial iron recombination centres. Analysis of a commercial multicrystalline cell fabrication process revealed that recombination in the emitter created the most stringent limit on the open circuit voltage, followed by the bulk and the rear surface. The fill factors of these commercial cells were mostly affected by series resistance, although some reduction due to injection-level dependent lifetimes seems likely also. Secondary Ion Mass Spectroscopy on gettered layers of multicrystalline silicon revealed the presence of Cr and Fe in considerable quantities. Further evidence strongly implied that they resided almost exclusively as precipitates. More generally, injection-level dependent lifetime measurements offer the prospect of powerful contamination-monitoring tools, provided that the impurities are well characterised in terms of their energy levels and capture cross-sections. Conversely, lifetime measurements can assist with this process of characterising impurities, since they are extremely sensitive to their presence. This possibility is explored in this thesis, and a new technique, dubbed Injection-level Dependent Lifetime Spectroscopy (IDLS) is developed. To test its potential, the method was applied to the well-known case of FeB pairs in boron-doped silicon. The results indicate that the technique can offer much greater accuracy than more conventional DLTS methods, and may find applications in microelectronics as well as photovoltaics.
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Orellana, Pérez Teresa. "Mechanical behavior of alternative multicrystalline silicon for solar cells." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2013. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-117455.

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The usage of more inexpensive silicon feedstock for the crystallization of multicrystalline silicon blocks promises cost reduction for the photovoltaic industry. Less expensive substrates made out of metallurgical silicon (MG-Si) are used as a mechanical support for the epitaxial solar cell. Moreover, conventional inert solar cells can be produced from up-graded metallurgical silicon (UMG-Si). This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Solar cell processing steps can also exert a change in the values of mechanical strength of processed multicrystalline silicon wafers until the fabrication of a solar cell. Bending tests, fracture toughness and dynamic elastic modulus measurements are performed in this work in order to research the mechanical behavior of multicrystalline silicon crystallized with different qualities of silicon feedstock. Bending tests and residual stress measurements allows the quantification of the mechanical strength of the wafers after every solar cell processing step. The experimental results are compared with theoretical models found in the classical literature about the mechanical properties of ceramics. The influence of second phase particles and thermal processes on the mechanical strength of silicon wafers can be predicted and analyzed with the theoretical models. Metals like Al and Cu can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, amorphous silicon oxide particles (SiOx) lower the mechanical strength of multicrystalline silicon due to thermal residual stresses and elastic mismatch with silicon. Silicon nitride particles (Si3N4) reduce fracture toughness and cause failure by radial cracking in its surroundings due to its thermal mismatch with silicon. Finally, silicon carbide (SiC) and crystalline silicon oxide (SiOx) introduce thermal residual stresses but can have a toughening effect on the silicon matrix and hence, increase the mechanical strength of silicon wafers if the particles are smaller than a certain size. The surface of as-cut wafers after multi-wire sawing presents sharp micro-cracks that control their mechanical behavior. Subsequent removal of these micro-cracks by texture or damage etching approximately doubles the mechanical strength of silicon wafers. The mechanical behavior of the wafers is then governed by defects like cracks and particles formed during the crystallization of multicrystalline silicon blocks. Further thermal processing steps have a minor impact on the mechanical strength of the wafers compared to as-cut wafers. Finally, the mechanical strength of final solar cells is comparable to the mechanical strength of as-cut wafers due to the high residual thermal stress introduced after the formation of the metallic contacts which makes silicon prone to crack.
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Al-Amin, Mohammad. "Low-temperature gettering in multicrystalline silicon materials for photovoltaics." Thesis, University of Warwick, 2017. http://wrap.warwick.ac.uk/95505/.

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This thesis presents results on the effects of low-temperature gettering processes on minority carrier lifetime in multicrystalline silicon. Wafers are sourced from different height positions of a commercially-grown ingot. The distribution of different key material properties including bulk lifetime, interstitial iron concentration, and dislocation density are characterised and are found to vary widely with ingot height position. Lifetimes are measured by using temporary liquid iodine-ethanol passivation at room temperature or silicon nitride films deposited by plasma-enhanced chemical vapour deposition. Lifetimes are lower in samples from the extrema of ingot than the centre parts. Interstitial iron concentrations are found to be highest in the bottom samples and lowest at the centre of the ingot. Dislocation density is lowest at the bottom of the ingot and increases with ingot height position. In as-grown wafers, low-temperature gettering can improve lifetime substantially in relatively poor samples from the extrema of the ingot. Iodine-ethanol passivation is used to separate thermal effects of annealing from any bulk passivation which may occur during surface passivation from lifetime measurement. The largest relative lifetime improvement (from 5.5 μs to 38.7 μs) is achieved in material from the bottom of the ingot with annealing at 400°C for 35 h. The benefit of low-temperature annealing is marginal for middle samples. Bulk interstitial iron concentrations decrease by up to 2.1 order of magnitude in the bottom samples. The reduction in interstitial iron concentration is not found to be systematically dependent on annealing temperature. For bottom samples a good correlation between the changes in lifetime and interstitial iron concentration is found. The effects of different passivation schemes on low-temperature gettering is also investigated. The results show that starting lifetime and interstitial iron concentration strongly depends on the choice of passivation scheme. The effect of different surface passivation schemes is more pronounced in relatively high lifetime samples. In samples from the bottom of the middle of the wafer, lifetime improves from 113 μs to 171 μs with silicon nitride passivation upon annealing at 400 °C for 25 h. Supporting results from secondary ion mass spectrometry show that substantial concentrations of iron exist in the silicon nitride film after low-temperature annealing. This suggests silicon nitride layer might be an additional gettering centre for interstitial iron. This thesis also studies the effects of low-temperature annealing combined with a standard phosphorus diffusion process to form an emitter. Lifetime in samples from the top and bottom of the ingot can be improved by annealing at 300°C and 400°C even after the phosphorus diffusion process. The largest improvement is from 54 μs to 78 μs upon post-diffusion annealing of bottom samples at 300°C, and the results suggest gettering of impurities other than interstitial iron is likely. The phosphorus diffused emitter layers do not act as effective additional gettering sites for interstitial iron upon low-temperature annealing. The lifetime improvement upon pre-diffusion annealing is retained after the diffusion process. In summary, low-temperature annealing has the potential to improve the lifetime in as-grown multicrystalline silicon and after a phosphorus diffusion gettering under some conditions. Low-temperature annealing thus provides a potential low cost route to improve multicrystalline solar cell efficiencies.
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Vogl, Michelle (Michelle Lynn). "Dislocation density reduction in multicrystalline silicon through cyclic annealing." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/68956.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2011.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 77-78).
Multicrystalline silicon solar cells are an important renewable energy technology that have the potential to provide the world with much of its energy. While they are relatively inexpensive, their efficiency is limited by material defects, and in particular by dislocations. Reducing dislocation densities in multicrystalline silicon solar cells could greatly increase their efficiency while only marginally increasing their manufacturing cost, making solar energy much more affordable. Previous studies have shown that applying stress during high temperature annealing can reduce dislocation densities in multicrystalline silicon. One way to apply stress to blocks of silicon is through cyclic annealing. In this work, small blocks of multicrystalline silicon were subjected to thermal cycling at high temperatures. The stress levels induced by the thermal cycling were modeled using finite element analysis (FEA) on Abaqus CAE and compared to the dislocation density reductions observed in the lab. As too low of stress will have no effect on dislocation density reduction and too high of stress will cause dislocations to multiply, it is important to find the proper intermediate stress level for dislocation density reduction. By comparing the dislocation density reductions observed in the lab to the stress levels predicted by the FEA modeling, this intermediate stress level is determined.
by Michelle Vogl.
S.M.
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Schultz, Oliver [Verfasser]. "High-efficiency multicrystalline silicon solar cells / vorgelegt von Oliver Schultz." München : Verl. Dr. Hut, 2005. http://d-nb.info/977880567/34.

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Austad, Karianne. "Characterization of electrical activity and lifetime in compensated multicrystalline silicon." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-13263.

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This master's thesis concerns the electrical activity and lifetime in compensated multicrystalline silicon wafers used for solar cell production.Resistivity profiles across grain boundaries have been obtained by a Four Point Probe (FPP). Profiles have been investigated in relation to minority carrier lifetime acquired by Microwave Photo Conductance Decay (uW-PCD).It has been found that a two-step process consisting of pre-annealing at either 600C or at 900C followed by phosphorus diffusion (P) gettering will increase the electrical activity of crystalline defects. It has been proposed that a P gettering step should follow directly after annealing for a better dissolution of metallic precipitates. Introduced defects in the material as a consequence of both pre-annealing at 900$^circ$C and of resistivity measurements before gettering, have possibly enhanced the phosphorus diffusion depth in the gettering process. The higher concentration of phosphorus has lead to an augmented lifetime in the material. Metallic impurity precipitation at defects, affecting the electrical activity and the minority carrier recombination rate, has been observed. A good correlation between grain structure, resistivity- and lifetime profiles has thus been established.
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Books on the topic "Multicrystalline"

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Rai, Dibya Prakash, ed. Advanced Materials and Nano Systems: Theory and Experiment - Part 2. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/97898150499611220201.

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The discovery of new materials and the manipulation of their exotic properties for device fabrication is crucial for advancing technology. Nanoscience, and the creation of nanomaterials have taken materials science and electronics to new heights for the benefit of mankind. Advanced Materials and Nanosystems: Theory and Experiment covers several topics of nanoscience research. The compiled chapters aim to update students, teachers, and scientists by highlighting modern developments in materials science theory and experiments. The significant role of new materials in future technology is also demonstrated. The book serves as a reference for curriculum development in technical institutions and research programs in the field of physics, chemistry and applied areas of science like materials science, chemical engineering and electronics. This part covers 12 topics in these areas: 1. Recent advancements in nanotechnology: a human health Perspective 2. An exploratory study on characteristics of SWIRL of AlGaAs/GaAs in advanced bio based nanotechnological systems 3. Electronic structure of the half-Heusler ScAuSn, LuAuSn and their superlattice 4. Recent trends in nanosystems 5. Improvement of performance of single and multicrystalline silicon solar cell using low-temperature surface passivation layer and antireflection coating 6. Advanced materials and nanosystems 7. Effect of nanostructure-materials on optical properties of some rare earth ions doped in silica matrix 8. Nd2Fe14B and SmCO5: a permanent magnet for magnetic data storage and data transfer technology 9. Visible light induced photocatalytic activity of MWCNTS decorated sulfide based nano photocatalysts 10. Organic solar cells 11. Neodymium doped lithium borosilicate glasses 12. Comprehensive quantum mechanical study of structural features, reactivity, molecular properties and wave function-based characteristics of capmatinib
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Book chapters on the topic "Multicrystalline"

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Trempa, Matthias, Georg Müller, Jochen Friedrich, and Christian Reimann. "Grain Boundaries in Multicrystalline Silicon." In Handbook of Photovoltaic Silicon, 1–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-52735-1_25-1.

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Kaiser, U., M. Kaiser, and R. Schindler. "Texture Etching of Multicrystalline Silicon." In Tenth E.C. Photovoltaic Solar Energy Conference, 293–94. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_74.

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Trempa, Matthias, Georg Müller, Jochen Friedrich, and Christian Reimann. "Grain Boundaries in Multicrystalline Silicon." In Handbook of Photovoltaic Silicon, 589–636. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-56472-1_25.

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Roy, K. "Multicrystalline Silicon and Highly Efficient Solar Cells." In Springer Proceedings in Physics, 152–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_22.

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Margadonna, D., F. Ferrazza, R. Peruzzi, S. Pizzini, C. Acerboni, L. Tarchini, Wei XiWen, and A. Lillo. "Donor and Acceptor Neutralization in Multicrystalline Silicon." In Tenth E.C. Photovoltaic Solar Energy Conference, 678–80. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_174.

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Gottschalk, H. "TEM Investigations of Dislocations in Annealed Multicrystalline Silicon." In Springer Proceedings in Physics, 13–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_2.

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Lan, C. W. "Growth of Multicrystalline Silicon: The High-Performance Casting Method." In Handbook of Photovoltaic Silicon, 1–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-52735-1_34-1.

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Lan, C. W. "Growth of Multicrystalline Silicon: The High-Performance Casting Method." In Handbook of Photovoltaic Silicon, 1–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-52735-1_34-2.

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Hartiti, B., J. C. Muller, P. Siffert, and D. Sarti. "Classical and Rapid Thermal-Process-Induced Gettering in Multicrystalline Silicon." In Springer Proceedings in Physics, 230–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_32.

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Fujiwara, Kozo. "Growth of Multicrystalline Silicon for Solar Cells: Dendritic Cast Method." In Handbook of Photovoltaic Silicon, 1–22. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-52735-1_33-1.

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Conference papers on the topic "Multicrystalline"

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Peter, K., R. Kopecek, M. Wilson, J. Lagowski, E. Enebakk, A. Soiland, and S. Grandum. "Multicrystalline solar grade silicon solar cells." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5617206.

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Sergey, Karabanov, Andrey Serebryakov, Oleg Belyakov, Dmitry Suvorov, and Evgeny Terukov. "3-D MODEL OF MULTICRYSTALLINE SILICON INGOT BASED ON PHOTOLUMINISCENT IMAGES OF WAFERS." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1615.silicon-2020/254-257.

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Ruby, Douglas S., Saleem Zaidi, S. Narayanan, Satoshi Yamanaka, and Ruben Balanga. "RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells." In ASME 2003 International Solar Energy Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/isec2003-44003.

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We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.
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Jensen, Mallory Ann, Jasmin Hofstetter, David P. Fenning, Ashley E. Morishige, Gianluca Coletti, Barry Lai, and Tonio Buonassisi. "The distribution of chromium in multicrystalline silicon." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925547.

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Swatowska, Barbara, Tomasz Stapinski, and Z. Sobkow. "Modified structures of multicrystalline silicon as light detectors." In SPIE Proceedings, edited by Tadeusz Pisarkiewicz. SPIE, 2006. http://dx.doi.org/10.1117/12.721039.

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Fan, Yang-Chieh, Jason Tan, Sieu Pheng Phang, and Daniel Macdonald. "Iron imaging in multicrystalline silicon wafers via photoluminescence." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5616749.

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Rinio, Markus, Dietmar Borchert, Stefan Muller, Stephan Riepe, Rainer Tolle, Lars Janben, and Heinrich Kurz. "Industrial Rear Sin-Passivated Multicrystalline Silicon Solar Cells." In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279646.

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Choi, H. J., M. I. Bertoni, J. Hofstetter, D. P. Fenning, D. M. Powell, S. Castellanos, and T. Buonassisi. "Dislocation density reduction during impurity gettering in multicrystalline silicon." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2. IEEE, 2012. http://dx.doi.org/10.1109/pvsc-vol2.2012.6656733.

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Choi, H. J., M. I. Bertoni, J. Hofstetter, D. P. Fenning, D. M. Powell, S. Castellanos, and T. Buonassisi. "Dislocation density reduction during impurity gettering in multicrystalline silicon." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2. IEEE, 2013. http://dx.doi.org/10.1109/pvsc-vol2.2013.6656733.

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Hezel, R., and K. Jaeger. "Bifacial inversion layer solar cells with multicrystalline silicon substrates." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105972.

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Reports on the topic "Multicrystalline"

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McHugo, S. A., A. C. Thompson, M. Imaizumi, H. Hieslmair, and E. R. Weberr. Rate limiting mechanism of transition metal gettering in multicrystalline silicon. Office of Scientific and Technical Information (OSTI), July 1997. http://dx.doi.org/10.2172/554829.

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McHugo, S. A., A. C. Thompson, and H. Hieslmair. Interactions of structural defects with metallic impurities in multicrystalline silicon. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603693.

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McHugo, S. A., A. C. Thompson, and M. Imaizumi. The rate-limiting mechanism of transition metal gettering in multicrystalline silicon. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603698.

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ZAIDI, SALEEM H. Reactive Ion Etching for Randomly Distributed Texturing of Multicrystalline Silicon Solar Cells. Office of Scientific and Technical Information (OSTI), May 2002. http://dx.doi.org/10.2172/800948.

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Gabor, A., and F. van Mierlo. Self Aligned Cell: Scaling Up Manufacture of a Cost Effective Cell Architecture for Multicrystalline Silicon Photovoltaics. Office of Scientific and Technical Information (OSTI), December 2010. http://dx.doi.org/10.2172/1001446.

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Ounadjela, K., and A. Blosse. New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007 -- June 16, 2009. Office of Scientific and Technical Information (OSTI), August 2010. http://dx.doi.org/10.2172/985574.

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New Tool Quantitatively Maps Minority-Carrier Lifetime of Multicrystalline Silicon Bricks (Fact Sheet). Office of Scientific and Technical Information (OSTI), November 2011. http://dx.doi.org/10.2172/1029409.

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