Academic literature on the topic 'Mott materials'

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Journal articles on the topic "Mott materials":

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Kiffner, Martin, Jonathan Coulthard, Frank Schlawin, Arzhang Ardavan, and Dieter Jaksch. "Mott polaritons in cavity-coupled quantum materials." New Journal of Physics 21, no. 7 (July 31, 2019): 073066. http://dx.doi.org/10.1088/1367-2630/ab31c7.

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Furukawa, Tetsuya, Kazuya Miyagawa, Hiromi Taniguchi, Reizo Kato, and Kazushi Kanoda. "Quantum criticality of Mott transition in organic materials." Nature Physics 11, no. 3 (February 9, 2015): 221–24. http://dx.doi.org/10.1038/nphys3235.

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Feng, Dong-Lai. "Mott physics — one of main themes in quantum materials." Acta Physica Sinica 72, no. 23 (2023): 237101. http://dx.doi.org/10.7498/aps.72.20231508.

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<sec>The competition and cooperation between the itinerancy behavior and localization behavior of electrons in correlated quantum materials, known as Mott physics, is the physical mechanism behind the diverse states of many quantum materials. This article reviews the manifestation of Mott physics in various quantum materials and establishes it as one of the main themes of quantum materials. Finding and understanding its ever-changing ways of manifestation is one of the central tasks of experimental research on condensed matter physics.</sec><sec>Specifically, the filling-control route of Mott transition is illustrated by exampling the surface K-dosed Sr<sub>2</sub>IrO<sub>4</sub>, which exhibits d-wave gap, pseudogap behavior in underdoped regime, and phase separation with inhomogeneous electronic state distribution. All of these show strong resemblances to the doped cuprate superconductors, another prototypical filling-control type of Mott transition case. On the other hand, the bandwidth-control route of Mott transition could be found in NiS<sub>2–<i>x</i></sub>Se<sub><i>x</i></sub>, where its bandwidth continuously decreases with Se concentration decreasing, until it becomes an insulator. In addition, the essence of various ways of doping in iron-based superconductors is to change their bandwidths. The superconductivity shows up at intermediate bandwidth with moderate correlations, and it diminishes when the bandwidth is large and the electron correlations are weak. For heavily electron-doped iron-selenides, there is even a Mott insulator phase with strong correlations.</sec><sec>For carbon based materials, the phase transition between the antiferromagnetic insulator and superconducting state of A15 Cs<sub>3</sub>C<sub>60</sub> as the volume of fullerene anions decreases could be understood in terms of a bandwidth-control Mott transition; the insulator-superconductor transition discovered in electrically gated twisted-angle bilayer graphene could be understood as a filling-control Mott transition.</sec><sec>For f electron systems, the interplay between itinerancy and localization dominates the heavy fermion behavior and their ground states. The behaviors of the f electrons are demonstrated by using the angle-resolved photoemission data of CeCoIn<sub>5</sub>, whose f electron band becomes more coherent with temperature decreasing, and the c-f hybridization is thus enhanced and the band mass of conduction band continuously increases. The c-f hybridization behaviors of CeCoIn<sub>5,</sub> CeIrIn<sub>5</sub>, and CeRhIn<sub>5</sub> are compared with each other, and the differences in hybridization strength put their ground states into different regimes of the Doniach phase diagram. Similarly, the Skutterudites 4f<sup>2</sup> Kondo lattice system PrOs<sub>4</sub>Sb<sub>12</sub> and its sibling 4f<sup>1</sup> system CeOs<sub>4</sub>Sb<sub>12</sub> also have different ground states due to a slight difference in their c-f hybridization strengths.</sec>
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Wang, Yue, Kyung-Mun Kang, Minjae Kim, Hong-Sub Lee, Rainer Waser, Dirk Wouters, Regina Dittmann, J. Joshua Yang, and Hyung-Ho Park. "Mott-transition-based RRAM." Materials Today 28 (September 2019): 63–80. http://dx.doi.org/10.1016/j.mattod.2019.06.006.

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Inoue, Isao H., and Marcelo J. Rozenberg. "Taming the Mott Transition for a Novel Mott Transistor." Advanced Functional Materials 18, no. 16 (August 22, 2008): 2289–92. http://dx.doi.org/10.1002/adfm.200800558.

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Gavrichkov, Vladimir A. "A simple metal–insulator criterion for the doped Mott–Hubbard materials." Solid State Communications 208 (April 2015): 11–14. http://dx.doi.org/10.1016/j.ssc.2015.02.014.

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Tan, Yuting, Vladimir Dobrosavljević, and Louk Rademaker. "How to Recognize the Universal Aspects of Mott Criticality?" Crystals 12, no. 7 (June 30, 2022): 932. http://dx.doi.org/10.3390/cryst12070932.

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In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type, including dilute two-dimension electron gases (2DEG) in semiconductors, Mott organic materials, as well as the recently discovered transition-metal dichalcogenide (TMD) moiré bilayers. Remarkably similar behavior is found in all these systems, which is starting to paint a robust picture of Mott criticality. Most notable, on the metallic side a resistivity maximum is observed whose temperature scale vanishes at the transition. We compare the available experimental data on these systems to three existing theoretical scenarios: spinon theory, Dynamical Mean Field Theory (DMFT) and percolation theory. We show that the DMFT and percolation pictures for Mott criticality can be distinguished by studying the origins of the resistivity maxima using an analysis of the dielectric response.
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Brandow, Baird. "The physics of Mott electron localization." Journal of Alloys and Compounds 181, no. 1-2 (April 1992): 377–96. http://dx.doi.org/10.1016/0925-8388(92)90334-6.

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LaGasse, Samuel W., Prathamesh Dhakras, Kenji Watanabe, Takashi Taniguchi, and Ji Ung Lee. "Schottky-Mott Limit: Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit (Adv. Mater. 24/2019)." Advanced Materials 31, no. 24 (June 2019): 1970169. http://dx.doi.org/10.1002/adma.201970169.

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H�fner, S. "Mott insulation in transition metal compounds." Zeitschrift f�r Physik B Condensed Matter 61, no. 2 (June 1985): 135–38. http://dx.doi.org/10.1007/bf01307767.

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Dissertations / Theses on the topic "Mott materials":

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Lantz, Gabriel. "Ultrafast electron dynamics in Mott materials." Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112014/document.

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Les isolants de Mott sont un exemple parfait de l’impact des corrélations électroniques locales sur les propriétés macroscopiques des matériaux. En variant légèrement le dopage ou la pression, un métal peut se transformer en un isolant. Ces propriétés peuvent être modifiées de manière très rapide en plaçant ces matériaux loin de l'équilibre. Nous avons étudié un prototype de Mott-Hubbard, V2O3 dopé en Cr, en utilisant l'état de l’art des techniques pompe-sonde, à savoir la photoémission résolue en angle, la réflectivité optique, la spectroscopie THz, et la diffraction des rayons X. La réponse électronique du système, après une excitation laser femtoseconde, qui a été maintenue pour chaque expérience à une longueur d'onde de 800 nm, a pu être déconvoluée de la réponse du réseau. Une étude comparative de ces réponses transitoires démontre un fort couplage électron-phonon dans ce prototype de matériau fortement corrélé. Avant thermalisation, le poids spectral est transféré de la bande de Hubbard inférieure vers le gap de Mott. Sur une échelle de temps plus long un état métastable est stabilisé par un changement structural. Pour mieux comprendre la réponse transitoire des isolants de Mott, nous avons également étudié un autre composé de Mott, BaCo1-xNixS2. Les tendances générales des isolants de Mott après photoexcitation ont été analysées en utilisant un modèle à deux orbitales. Nous interprétons que le remplissage du gap comme un changement spécifique des occupations orbitales
Mott insulators are a perfect example of how local electronic correlations can change macroscopic properties of materials. Varying slightly the doping or the pressure can transform a metal to an insulator. These properties can be modified extremely rapidly by driving these materials far from equilibrium. We have investigated the model Mott-Hubbard material Cr-doped V2O3 using state of the art pump-probe techniques, namely angle resolved photoelectron spectroscopy, optical reflectivity, THz time-domain spectroscopy, and X-ray diffraction. We were able to unequivocally disentangle the electronic and the lattice response of the system to a femtosecond laser excitation, which was kept in all cases at a wavelength of 800 nm. We present a comparative study of these transient responses, which demonstrates the strong electron-phonon coupling of this strongly correlated model material. We show that before thermalization, spectral weight is transferred from the lower Hubbard band towards the Mott gap. On a longer time scale a metastable state is stabilized by the lattice structure. To further understand the transient response of Mott insulators, we have also studied another Mott compound, BaCo1-xNixS2. The general trends of photoexcitation in Mott insulators are analyzed using a two orbital model. We argue that the filling of the gap can be due to a change of the specific orbital fillings
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Scheiderer, Philipp [Verfasser], and Ralph [Gutachter] Claessen. "Spectroscopy of Prototypical Thin Film Mott Materials / Philipp Scheiderer ; Gutachter: Ralph Claessen." Würzburg : Universität Würzburg, 2019. http://d-nb.info/1193423899/34.

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Winograd, Emilio. "Orbital-selectivity in strongly correlated fermionic systems. From materials to cold-atoms." Thesis, Paris 11, 2013. http://www.theses.fr/2013PA112031.

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Cette thèse se concentre sur des aspects multiorbitales des systèmes fermioniques fortement corrélés. En particulier, sur l'existence d'une différentiation orbitale dans laquelle la coexistence de caractère itinérant et localisé peut être associée à différentes orbitales. Cette problématique est examinée dans le contexte des atomes froids et des matériaux, offrant un pont entre les deux communautés.Dans la première partie de la thèse, nous donnons un aperçu du problème des corrélations fortes dans les matériaux, et nous introduisons le concept de 'transition de Mott sélective en orbitales'. Nous fournissons également les principaux outils pour comprendre comment les matériaux peuvent être simulés avec des atomes froids, et nous présentons des résultats importants liés à la transition métal-isolant de Mott. Les aspects techniques, basées sur la théorie du champ moyen dynamique sont également discutés, et la solution de deux principaux modèles de systèmes fermioniques fortement corrélés, à savoir le modèle d'Hubbard (HM) et le modèle de Falicov-Kimball (FKM), sont passés en revue.Ensuite, nous étudions en détail la physique de deux espèces fermioniques en interaction forte avec des masses différentes dans un réseau optique. Nous établissons les différentes phases (avec et sans ordre à longue portée) en termes de la force des interactions (U), du rapport des masses et de la température (T), et aussi nous discutons les variables thermodynamiques, qui sont pertinentes pour les expériences d'atomes froids. Nous montrons que dans la phase métallique (U inférieure à une valeur critique) et avec un certain degré de différence de masses, un 'crossover' apparaît entre un état métallique du type de liquide de Fermi à basse T, et un état avec différentiation orbital à haute T, où les fermions lourds se localisent tandis que les fermions légers restent itinérant. Par conséquent, nous proposons ce modèle minimal pour étudier la physique des systèmes qui présentent une différentiation orbitale avec des expériences d'atomes froids.Basé sur les propriétés du modèle étudié, nous proposons la 'chromatographie entropique' comme une nouvelle méthode pour refroidir des atomes fermioniques dans les réseaux optiques. Nous discutons son efficacité et ses limites, et fournissons quelques idées afin de les surmonter.Dans la dernière partie de la thèse, nous généralisons le modèle précédent aux matériaux corrélés à plusieurs bandes qui permet d'afficher la différentiation orbitale. Nous montrons que l'état de Mott sélectif en orbital peut être stable sous les distorsions du réseau, modélisées par une hybridation locale entre les orbitales. Cependant, l'état de Mott est caractérisé par un pseudo-gap, où les fluctuations de charge sont brusquement réduites, mais l'état reste compressible. En relation au modèle précédent, nous discutons le 'crossover' entre l'état métallique et l'état sélectif induit par des effets température, nous comparons nos résultats avec les expériences de photoémission, et nous prédisons ce qui se passerait dans les matériaux qui présentent une hybridation locale entre les bandes
This thesis focuses on multiorbital aspects of strongly correlated fermionic systems. In particular, it focuses on the existence of orbital differentiation in which coexistence of itinerant and localized character can be associated to different orbitals. This subject is discussed in the context of cold atoms and materials, providing a bridge between both communities.In the first part of the thesis, we give an insight into the problem of strong correlations in materials, and we introduce the concept of 'orbital-selective Mott transition'. We also provide the main tools to understand how materials can be simulated with cold atoms experiments, and we present important related results in the context of the metal-Mott insulator transition. The technical aspects, based on dynamical mean-field theory are also discussed, and the solution of two key models of strongly correlated fermionic systems, i.e., the Hubbard model (HM) and the Falicov-Kimball model (FKM), are reviewed.Then we study in detail the physics of two interacting fermionic species with different masses in an optical lattice. We establish the different phases (with and without long-range order) in terms of the interactions strength (U), mass ratio and temperature (T), and also discuss the thermodynamic variables, which are relevant in cold atoms experiments. We show that in the metallic phase (U below a critical value) and for some degree of mass imbalance, a crossover appears between a Fermi-liquid metallic state at low T, and an 'orbital-selective' state at higher T, where the heavy fermions effectively localize while the light species remain itinerant. Hence, we propose this minimal model for addressing orbital-selective physics with cold atoms experiments.Based on the properties of the studied model, we propose the 'entropic chromatography' as a new method for cooling fermionic atoms in optical lattices. We discuss its efficiency and limitations, and provide some ideas in order to overcome them.In the last part of the thesis we generalize the previous model to a model relevant for multiband correlated materials that can display orbital differentiation. We show that the orbital-selective Mott state can be stable under lattice distortions modeled by local hybridization between the orbitals. However, the Mott state is characterized by a pseudogap, where charge fluctuations abruptly reduce, but the state remains compressible. In connection with the previous model, we discuss the temperature-induced orbital-selective crossover in this problem, we compare our results with photoemission experiments, and predict what would happen in materials that display local hybridization between the bands
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Sagaidak, Iryna. "Bi-functional materials combining energy storage and energy conversion from sunlight." Thesis, Amiens, 2019. http://www.theses.fr/2019AMIE0025.

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La nature intermittente de l'énergie solaire est souvent résolue par un couplage entre le PV et une batterie. Notre approche plus fondamentale vise à développer des matériaux capables de combiner ces deux fonctions à l'échelle moléculaire. Des nanocristaux de TiO2 de 5 nm ont été synthétisés dans notre groupe, ce qui a permis une réaction quantitative de photorecharge sous illumination standard. Nous présentons ici une étude originale portant sur l'évolution des propriétés optoélectroniques et de la dynamique du transfert de charge dans une électrode de TiO2 à l'aide d'expériences spectroscopiques in operando effectuées pendant le fonctionnement de la batterie. L'augmentation de la valeur de la bande interdite et de l'absorbance a été observée lors de l'insertion du lithium dans TiO2. Un décalage négatif en énergie de la bande de conduction indique un potentiel plus oxydant des trous photogénérés dans le Li0.6TiO2 par rapport au TiO2 initial. En analysant les processus de recombinaison dans Li0.6TiO2, nous avons établi une compétition entre les processus ultra-rapides (gamme ps) de recombinaison directe et de transfert de charge vers Ti3+ dans Li0.6TiO2, ce qui limite potentiellement le rendement de la réaction de photorécharge. Cette étude a été étendue à d'autres matériaux d'insertion généralement utilisés dans les batteries lithium-ion (Li4Ti5O12, LiCoO2, LiFePO4, MoO3, etc.). Les positions de bord de bande, la bande interdite, le type de porteurs de charge et leur concentration ont été mesurées et rassemblées dans une base de données. Basé sur ces résultats, la possibilité de photorécharge induite par la lumière a été évaluée et les premiers résultats discutés
The problem of intermittent nature of solar energy is often addressed by the traditional coupling of the PV and battery units. Our more fundamental approach targets the development of materials able to combine solar energy conversion and storage at the molecular level. The 5 nm anatase TiO2 nanocrystals were synthesized in our group affording a quantitative photorecharge reaction by a sole contribution of illumination. Here, we present a study of the evolution of the optoelectronic properties and dynamics of charge transfer in TiO2 electrode using in situ / in operando experiments performed during the battery functioning (UV-visible, Mott-Schottky, fluorescence spectroscopy). The increase of the bandgap value and the rise of absorbance are observed upon lithium insertion into TiO2. A negative shift of the conduction band indicates a more oxidizing potential of the photogenerated holes in Li0.6TiO2 compared to TiO2. By analysis of the recombination processes in TiO2 upon lithium insertion, we established a competition of the ultra-fast (ps range) processes of direct recombination and charge transfer towards Ti3+ in Li0.6TiO2, potentially limiting the yield of the photorecharge reaction. This study was extended to other insertion materials typically used in lithium-ion batteries (Li4Ti5O12, LiCoO2, LiFePO4, MoO3, etc.). The measured band edge positions, band gap, charge carrier type and concentration were gathered into a database, based on which the fundamental evaluation of the possibility of the light-induced photorecharge was conducted. The first results of the photoelectrochemical study of chosen materials are also discussed
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Leriche, Raphaël. "Unconventional superconductivity in quasi-2D materials with strong spin-orbit coupling." Thesis, Sorbonne université, 2019. http://www.theses.fr/2019SORUS577.

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La réalisation de supraconducteurs topologiques constitue un des principaux enjeux actuels de la physique de la matière condensée. Il a en effet été prédit que ces systèmes devaient abriter des fermions de Majorana. Ces fermions de Majorana disposent à la fois d’une statistique non-abélienne et, du fait de leur origine topologique, d’une robustesse face au désordre local, ce qui les rend très attrayants pour des applications en informatique quantique. Une approche susceptible de conduire à de la supraconductivité topologique consiste à considérer des systèmes supraconducteurs à fort couplage spin-orbite et brisant la symétrie d’inversion. C’est dans cette optique que, dans le cadre de cette thèse, j’ai effectué des mesures de microscopie et spectroscopie par effet tunnel sur des matériaux quasi-bidimensionnels : (LaSe)1,14(NbSe2)2 et Sr2IrO4.J’ai tout d’abord étudié les propriétés électroniques du matériau incommensurable (LaSe)1,14(NbSe2)2, proche parent du composé dichalcogénure de métaux de transition 2HNbSe2. (LaSe)1,14(NbSe2)2 est une hétérostructure faite d’alternances de biplans NbSe2 à géométrie prismatique trigonale et de biplans de LaSe avec une structure de sel de roche. Le fort couplage spin-orbite ainsi que la non-centrosymétrie présents dans les plans NbSe2 font de (LaSe)1,14(NbSe2)2 un potentiel candidat pour de la supraconductivité topologique. Dans cette thèse, je présente des résultats de spectroscopie montrant que la structure électronique de (LaSe)1,14(NbSe2)2 est similaire à celle de la monocouche de NbSe2 avec un dopage de type électron accompagné par un déplacement du potentiel chimique de 0,3 eV, jusqu’alors inégalé. J’ai également pu démontrer la nature quasi–bidimensionnelle de (LaSe)1,14(NbSe2)2 et notamment la présence d’un fort couplage spin-orbite de type Ising. De plus, la faible robustesse de la supraconductivité vis à vis du désordre non magnétique couplée à des mesures d’interférences de quasiparticules m’a permis de mettre en avant le caractère non conventionnel du paramètre d’ordre supraconducteur dans (LaSe)1,14(NbSe2)2. Cette étude permet d’envisager l’utilisationd’hétérostructures incommensurables telles que (LaSe)1,14(NbSe2)2 pour explorer la physique des dichalcogénures de métaux de transition dans la limite bidimensionnelle, pour laquelle de nombreuses études théoriques ont prédit une supraconductivité topologique. Dans cette thèse, je présente également une étude des effets du dopage sur les propriétés électroniques de l’oxyde d’iridium Sr2IrO4. Sr2IrO4 est un isolant de Mott non conventionnel puisqu’il doit cette propriété à la présence d’un fort couplage spin-orbite. Du fait d’une brisure locale de la symétrie d’inversion, certaines prédictions théoriques ont pu montrer que Sr2IrO4 devrait devenir un supraconducteur topologique une fois dopé. Ici, je montre qu’avec le dopage, Sr2IrO4 subit une transition de phase inhomogène à l’échelle nanométrique entre un état isolant de Mott et un état pseudo-métallique. Ce travail justifie la pertinence d’utiliser une sonde locale telle que le microscope à effet tunnel afin de venir compléter des résultats sur la physique de Mott obtenus par des méthodes intégratives comme la spectroscopie électronique résolue en angle
The realization of topological superconductors is one of the main current goals of condensed matter physics. It was indeed predicted that such systems should host Majorana fermions. These Majorana fermions possess both a non-Abelian statistics and, because of their topological origin, a certain robustness against local disorder, which makes them attractive for quantum computing applications. One approach likely to lead to topological superconductivity consists in considering superconducting systems with strong spin-orbit coupling and with broken inversion symmetry. It is in this framework that, during this thesis, I performed scanning tunneling microscopy and spectroscopy measurements on quasi-2D materials : (LaSe)1,14(NbSe2)2 and Sr2IrO4. I first studied the electronic properties of misfit compound LaNb2Se5, which is a parent of transition metal dichalcogenide 2H-NbSe2. (LaSe)1,14(NbSe2)2 is a heterostructure made out of alternations of NbSe2 bilayers with trigonal prismatic geometry and LaSe bilayers with rocksalt structure. (LaSe)1,14(NbSe2)2 is a potential candidate for topological superconductivity because of the presence of both a strong spin-orbit coupling and of broken inversion symmetry in NbSe2 planes. Here, I present spectroscopic results showing that the electronic structure of(LaSe)1,14(NbSe2)2 is very similar to the one of electron-doped monolayer NbSe2 with a shift of the chemical potential of 0,3 eV, priorly never reached. I could also demonstrate the quasi- 2D nature of (LaSe)1,14(NbSe2)2 and more particularly the presence of a strong Ising spinorbit coupling. Moreover, the observed weakness of superconductivity against non-magnetic disorder combined with quasiparticle interferences measurements allowed me to exhibit the unconventional nature of (LaSe)1,14(NbSe2)2 superconducting order parameter. This study opens the possibility to use misfit heterostructures such as (LaSe)1,14(NbSe2)2 to study thephysics of transition metal dichalcogenides in the 2D limit, for which many theoretical studies predict topological superconductivity. In this thesis, I also present a study on the effects of doping on the electronic properties of iridate compound Sr2IrO4. Sr2IrO4 is a spin-orbit induced Mott insulator. Because inversion symmetry is locally broken in Sr2IrO4, some theoretical predictions suggest that Sr2IrO4 should turn into a topological superconductor once doped. Here, I exhibit a nanometer-scaleinhomogeneous doping-driven Mott insulator to pseudo-metallic phase transition. This work further justifies the importance of using a local probe such as scanning tunnelling microscopy in order to complete results on Mott physics obtained by integrative methods like angle-resolved photoemission spectroscopy
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Koussir, Houda. "Multiscale study of the electric field induced transition in the Mott phase of GaMo4S8 crystals and TaSe2 monolayers." Electronic Thesis or Diss., Université de Lille (2022-....), 2024. http://www.theses.fr/2024ULILN004.

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Dans le domaine de la physique de la matière condensée, les isolants de Mott sont essentiels pour explorer des phénomènes électroniques complexes, ayant des implications significatives pour la supraconductivité à haute température et les liquides de spin quantiques. Cette thèse porte sur deux types d'isolants de Mott qui se distinguent l'un de l'autre par leur dimensionalité : des cristaux de GaMo4S8 et des monocouches de 1T-TaSe2.Après avoir introduit leurs propriétés dans le premier chapitre, le second chapitre traite des techniques utilisées pour caractériser ces matériaux à l'échelle locale, d'une part la microscopie et spectroscopie à effet tunnel pour mener une étude structurale et électronique et d'autre part la microscopie à effet tunnel à pointes multiples pour effectuer des mesures de transport.Cette dernière technique a notamment servi à analyser le transport dans GaMo4S8. Nous nous sommes alors intéressés à la réponse du matériau aux champs électriques externes, examinant le champ électrique seuil en fonction de la géométrie des électrodes et explorant l'évolution temporelle des temps de commutation en relation avec les distances inter-électrodes. L'obtention de transitions volatiles ouvre la voie à des applications telles que l'opération d'un microneurone à température ambiante.Pour mieux contrôler les propriétés de transition de phase des isolants de Mott, il est intéressant de considérer des systèmes bidimensionnels dans lesquels le passage du courant est confiné dans le plan du cristal. Aussi, le dernier chapitre se rapporte à la phase 1T du TaSe2, épitaxiée sur des substrats semi-conducteurs de phosphure de gallium (GaP). Comme le révèle l'étude réalisée par microscopie à effet tunnel à basse température, les monocouches de 1T-TaSe2 ne présentent pas seulement la modulation de la densité de charge (étoile de David) caractéristique de la phase onde de densité de charge, mais aussi un motif de Moiré original dû à l'interaction de la monocouche avec le substrat de GaP. Dans cette phase, caractérisée par spectroscopie tunnel, une bande interdite a été mise en évidence, signature de l'état isolant de Mott à basse température. L'état de Mott est corroboré par des mesures de transport dépendant de la température, qui indiquent la persistance de la phase isolante jusqu'à 400 kelvins. De plus, des mesures spectroscopiques à distance pointe-surface variable ont montré l'existence de transitions isolant-métal à basse température. L'observation de telles transitions permet d'envisager l'utilisation de cette hétérostructure à grande échelle comme candidat potentiel en tant que matériau neuromorphique
In the realm of condensed matter physics, Mott insulators are essential for exploring complex electronic phenomena, with significant implications for high-temperature superconductivity and quantum spin liquids. This thesis investigates two types of such materials, distinguished by their dimensionality : GaMo4S8 crystals and monolayer 1T-TaSe2.After presenting their properties in the first chapter, the second chapter addresses the local-scale characterization techniques used to characterize both materials, namely scanning tunneling microscopy and spectroscopy for structural and electronic studies, and multi-tip scanning tunneling microscopy for transport measurements. The latter technique was particularly employed to analyze transport in GaMo4S8. The study then delved into the material response to external electric fields, examining the threshold electric field in relation to the electrode geometry and exploring the temporal evolution of switching times in connection with inter-electrode distances. The achievement of volatile transitions opens prospects for applications such as the operation of a microneuron at room temperature.To enhance the control over phase transition properties of Mott insulators, it is beneficial to consider two-dimensional systems where the current flow is restricted within the crystal plane. The final chapter focuses on the 1T phase of TaSe2, epitaxially grown on gallium phosphide (GaP) semiconductor substrates. Low-temperature scanning tunneling microscopy studies reveal that 1T-TaSe2 monolayers exhibit not only the characteristic charge density modulation (Star of David) of the charge density wave phase but also a unique Moiré pattern due to the monolayer interaction with the GaP substrate. Scanning tunneling spectroscopy has identified a bandgap, hallmark of the Mott insulating state. This state is further substantiated by temperature-dependent transport measurements that show the persistence of the insulating phase up to 400 kelvins. Notably, spectroscopic measurements with varying tip-to-surface distances have unveiled insulator to metal transitions at low temperatures. The observation of such transitions suggests that this large-scale heterostructure could be a material of choice for neuromorphic applications
7

Forino, Paola Caterina. "Nuclear magnetic resonance study of the electron doped Dirac-Mott Insulator double perovskite Ba2Na(1-x)CaxOsO6." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020.

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Osmium-based materials exhibit unconventional magnetism due to the interplay between spin orbit coupling and strong electronic correlations. In this thesis we investigate for the first time the effect of charge doping on the Dirac Mott insulator double perovskites Ba2Na(1-x)CaxOsO6 by using Nuclear Magnetic Resonance technique. We study in details the evolution of the magnetic phase diagram as a function of doping and applied magnetic field. The system rapidly evolves from a canted to a collinear antiferromagnetic ground state with a monotonic increase of the magnetic transition temperature. Furthermore, the system remains insulating in the whole range of doping, despite the injection of extra electrons. This indicates that the Dirac-Mott insulating state of this material is unusually robust. In particular, the results show an unexpected thermally activated charge dynamics which suggests the presence of polarons dominating the high temperature excitations of this Dirac-Mott insulator.
8

Boissy, Clément. "Transport de matière au sein du film passif : Développement d’une méthodologie sélective corrélant les Point Defect Model et les modèles descriptifs." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0136.

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Le développement de la plaque bipolaire - PB -métallique nécessite une amélioration des propriétés du matériau qui la constitue. L'utilisation de l'acier implique une meilleure compréhension du film passif - FP. En effet, le cahier des charges de la PB demande une bonne conduction électronique ainsi qu'une longue durée de vie. L'amélioration de ces paramètres passe par une meilleure corrélation et compréhension entre les propriétés semi-conductrices et la résistance à la corrosion. La difficulté liée à l'étude de la passivation réside dans les nombreux phénomènes modifiant le comportement du film passif. De nombreux modèles présentés dans la littérature peuvent être utilisés pour caractériser la passivation. L'un des principaux, le Modèle de Défauts Ponctuels de D. D. Macdonald (Point Defect Model - PDM), décrit le FP à partir d'une série de réactions électrochimiques se déroulant à l'interface métal/oxyde et à l'interface oxyde/électrolyte. La réactivité est limitée par le transport de matière à travers l'oxyde. Après une étude bibliographique, ce phénomène semble être un paramètre discriminant dans le choix des modèles. Une méthode de sélection permettant une utilisation de chacun de ces modèles en fonction de leurs spécificités est proposée. Ainsi, cette méthode est basée sur la corrélation entre la mesure du transport de matière à partir des équations du PDM et l'analyse des Spectres d'Impédance Electrochimique (SIE). Le PDM caractérisant le transport de matière indépendamment de la SIE, il devient possible de déterminer le bien-fondé de la prise en compte de celui-ci dans les mesures de spectroscopie d'impédance électrochimique. L'évolution de la densité du porteur de charge majoritaire avec le potentiel de formation de l'oxyde permet d'accéder au coefficient de transport à partir des équations du PDM. Connaissant l'épaisseur de l'oxyde par des mesures XPS, la constante de temps et la fréquence caractéristique peuvent être déterminées. Sur la base de ces deux valeurs, un modèle descriptif d'analyse des spectres est sélectionné en évitant le sur-paramétrage. Cette méthode est appliquée d’abord à un matériau modèle, le chrome pur exposé à un milieu acide (pH 2), à différentes températures (30°C et 80°C). Elle valide la nécessité de la prise en compte du transport de matière à 80°C ainsi que la présence d'une surface composée d'une couche d'oxyde interne et d'une couche d'hydroxyde externe. Dans un second temps, cette méthode est utilisée sur un matériau industriel, un acier de type AISI 316L, à différents pH (1,2 et 3) et à différentes températures (30°C et 80°C). Elle a permis de décrire l'oxyde en surface comme une jonction p-n prenant en compte une couche riche en chrome interne avec un gradient de concentration de fer. Cette méthode a permis de caractériser de manière approfondie l'acier de type AISI 316L. Bien que ne concernant que le substrat, cette étape est déterminante dans l'amélioration des performances des PB métalliques
Developments in metallic bipolar plate, to apply more widely fuel cells, require an improved of the constitutive material. The use of stainless steel calls for a good understanding of the passive film. The required specifications are for good electrical conductivity and a long life-time. Those two parameters correspond to a correlation between the semiconductive properties and the good corrosion behavior. Nevertheless, the main problems of the passivity lie on the multiplicity of the phenomena that alter the passive film behavior. Numerous models described in the literature can be used to characterize the passivation. The Point Defect Model (PDM) describes the passivation through electrochemical reactions at the metal / oxide and at the oxide / electrolyte interfaces. The reactivity is limited by mass transport through the oxide. From the literature, those phenomena seems to be a discriminating parameter in the choice of a model. The selective method proposed allows us to use each model taking into account their specifics. This methodology is based on the correlation between the mass transport characterization, thanks to the PDM, and the analysis of the Electrochemical Impedance Spectroscopy (EIS). The PDM determines the transport coefficient apart from EIS measurements, so to validate the consideration of the mass transport during the analysis of the electrochemical impedance spectra. The evolution of the main charge carrier density as a function of the oxide formation potential allows us to calculate the transport coefficient from PDM equations. Thanks to the thickness of the oxide (determined by X-ray Photoelectron Spectroscopy), the time constant of the mass transport is determined. Based on this value, a descriptive model is used to analyze the EIS data, avoiding overparametrization. This method is applied first on a model material, pure chromium exposed to acidic solution (pH 2) at several temperatures (30°C and 80°C). It shows that the mass transport has to be taken into account at 80°C and the EIS model considers an inner chromium oxide layer and an outer chromium hydroxide. Secondly, the method is used to characterize an industrial material, AISI 316L stainless steel, at several pH (1, 2 and 3) and at several temperatures (30°C and 80°C). In this case, the oxide is describe as a p-n semiconductor junction with an chromium rich inner layer and an outer iron rich layer. The present methodology permits to deeply characterize the AISI 316L stainless steel. Even if this study concerns the substrate, this step is decisive to improve the performances of the metallic bipolar plates
9

Kamal, Abdelhamied Saber Suzan. "Synthesis and characterization of some nano-selenides and their applications in solar cells." Doctoral thesis, Universitat Politècnica de València, 2018. http://hdl.handle.net/10251/107389.

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Resumen (Castellano) El aumento del consumo de energía global junto con las preocupaciones ambientales ha generado mucho interés por las fuentes de energía alternativas y limpias, como la energía solar fotovoltaica. Los investigadores en la comunidad fotovoltaica han estado buscando formas de reducir costos mientras mantienen o aumentan las eficiencias. Una mejor comprensión de los materiales implicados es esencial para el rápido desarrollo de nuevas tecnologías. Las películas delgadas I-III-VI2 ofrecen sistemas prometedores para lograr células solares de alta eficiencia a un costo menor. De hecho, al adaptar la composición de los compuestos, es posible cambiar la banda prohibida del material para captar la luz solar de manera más eficiente. Esta tesis se centra en la preparación y caracterización del material de la capa absorbente, especialmente las películas delgadas nanocristalinas y la consideración de las características estructurales y eléctricas de dicha capa principal absorbente de células. La tesis examina cómo las diferentes técnicas de preparación y uso del material podrían afectar las propiedades del películas delgadas sintetizadas. Películas delgadas CuInSe2 y CuInS2 se depositaron sobre sustratos de vidrio ITO usando la técnica de electrodeposición en solución acuosa. Las películas electrodepositadas se caracterizaron por difracción de rayos X (XRD), microscopía electrónica de barrido (SEM) y análisis de rayos X de energía dispersiva (EDS). Se investigaron los efectos de recocido sobre los precursores electrodepositados. La estructura de calcopirita de CuInSe2/CuInS2 mostró una mejora de la cristalinidad después del tratamiento posterior de selenización/sulfurización en atmósfera Se/S, respectivamente. Los estudios de XRD y SEM revelaron una mejora de la calidad cristalina de las películas de CIS después de los tratamientos térmicos. Las propiedades ópticas de las películas delgadas recocidas CuInSe2-Se y CuInSe2-S se han estudiado para determinar el efecto del proceso de recocido en diferentes ambientes de selenio y azufre. Además, modificamos el CuInxCryGa1-x-ySe2 de cobre indio, donde x = 0.4, y = (0.0, 0.1, 0.2, 0.3) la capa de superestrato por el proceso de recubrimiento por centrifugado. CuInxCryGa1-xySe2 donde x = 0.4, y = (0.0, 0.1, 0.2, 0.3) nanopartículas han sido sintetizadas en primer lugar usando un método hidrotermal químico húmedo que se basa en un proceso térmico sin vacío sin ningún proceso de selenización adicional. Introduciendo diferentes fuentes de metal en un autoclave con etilenamina como solvente, se obtuvieron nanopartículas de CIGS a diferentes temperaturas en un rango de 190-230 °C. Los resultados de la difracción de rayos X (XRD) confirmaron la formación de una estructura de calcopirita CuInxCryGa1-x-ySe2 tetragonal. Finalmente, se estudió el efecto de la temperatura de recocido en los materiales tipo Kesterita (como el Cu2ZnSnS4) que son materiales de muy bajo costo y que no dañan el medio ambiente. Estudiamos el crecimiento de las películas delgadas cuaternarias Cu2ZnSnS4 (CZTS) de kesterita mediante un depósito electroquímico de un solo paso seguido de un recocido a baja temperatura. La influencia de diferentes atmósferas de recocido a tiempos de recocido constantes (t = 45 min) y parámetros de control de preparación fijos; es decir, concentración de la solución de materiales de partida (sales de metales precursores), tiempo de deposición y potencial de electrodeposición. Se estudiaron las propiedades estructurales, de composición, morfológicas y ópticas, así como las propiedades fotoelectroquímicas.
Abstract Increasing global energy consumption together with environmental concerns has led to much interest in alternative, cleaner sources of energy such as solar photovoltaic. Researchers in the solar cell community have been looking for ways to reduce costs while maintaining or increasing already high efficiencies. A fundamental understanding of the materials under consideration is essential to rapid development of new technologies. The I-III-VI2 thin films offer promising systems for achieving high efficiency solar cells at lower costs. In fact, by tailoring the chemistry of the compounds it is possible to change the bandgap of the material in order to collect sunlight more efficiently. First of all, this thesis focuses on absorber layer material preparation and characterization, especially nanocrystalline thin films and consideration of both structural and electrical characteristics of such main cell absorber layer.The thesis examines how different preparation techniques and material usage could affect the properties of the synthesized thin films (absorber layer). In this study CuInSe2 and CuInS2 thin films were deposited onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on the electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe2/CuInS2 showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. The optical properties of annealed CuInSe2-Se and CuInSe2-S thin films have been studied in order to determine the effect of annealing process in different selenium and sulfur atmosphere. In the second step we modified copper indium CuInxCryGa1-x-ySe2 where x=0.4, y= (0.0, 0.1, 0.2, 0.3)superstrate layer by spin coating process. CuInxCryGa1-x-ySe2 where x=0.4, y= (0.0, 0.1, 0.2, 0.3) nanoparticles have been synthesized firstly using a wet chemical hydrothermal method that is based on a non-vacuum thermal process without any additional selenization process. Introducing different metal sources in an autoclave with ethylenediamine as solvent, CIGS nanoparticles were obtained at different temperatures range 190-230°C. The X-ray diffraction (XRD) results confirmed the formation of a tetragonal CuInxCryGa1-x-ySe2 chalcopyrite structure. Finally, we turned again to the study of the annealing temperature effect onKesterite materials but this time in those of very low-cost materials and environmentally friendly Cu2ZnSnS4. We studied the growth of quaternary Cu2ZnSnS4 (CZTS) kesterite thin films by a single step electrochemical deposition followed by annealing at low temperature. The influence of different annealing atmospheres at constant annealing times (t = 45 min) and fixed preparation controlling parameters; i.e., starting materials (precursor metal salts) solution concentration, time of deposition and electrodeposition potential. Structural, compositional, morphological, and optical properties, as well as photoelectrochemical properties were studied.
Resum (Valencià) L'augment del consum d'energia global juntament amb les preocupacions ambientals ha generat molt d'interès per les fonts d'energia alternatives i netes, com ara l'energia solar fotovoltaica. Els investigadors de la comunitat fotovoltaica han estat buscant formes de reduir costos mentre mantenen o augmenten les eficiències. Una millor comprensió dels materials implicats és essencial per al ràpid desenvolupament de noves tecnologies. Les pel·lícules primes I-III-VI2 ofereixen sistemes prometedors per aconseguir cèl·lules solars d'alta eficiència a un cost menor. De fet, en adaptar la composició dels compostos, és possible canviar la banda prohibida del material per captar la llum solar de manera més eficient. Aquesta tesi se centra en la preparació i caracterització del material de la capa absorbent, especialment les pel·lícules primes nanocristal·lines i la consideració de les característiques estructurals i elèctriques d'aquesta capa principal absorbent de cèl·lules. La tesi examina com les diferents tècniques de preparació i ús del material podrien afectar les propietats del pel·lícules primes sintetitzades. Pel·lícules primes CuInSe2 i CuInS2 es van dipositar sobre substrats de vidre ITO usant la tècnica d'electrodeposició en solució aquosa. Les pel·lícules electrodepositadas es van caracteritzar per difracció de raigs X (XRD), microscòpia electrònica de rastreig (SEM) i anàlisi de raigs X d'energia dispersiva (EDS). Es van investigar els efectes de recuit sobre els precursors electrodepositados. L'estructura de calcopirita de CuInSe2/CuInS2 va mostrar una millora de la cristal·linitat després del tractament posterior de selenització/sulfurització en atmosfera de Se o S, respectivament. Els estudis de XRD i SEM van revelar una millora de la qualitat cristal·lina de les pel·lícules de CIS després dels tractaments tèrmics. Les propietats òptiques de les pel·lícules primes recuites CuInSe2-Es i CuInSe2-S s'han estudiat per determinar l'efecte del procés de recuit en diferents ambients de seleni i sofre. A més, modifiquem el CuInxCryGa1-x-ySe2 de coure indi, on x = 0.4, i = (0.0, 0.1, 0.2, 0.3) la capa d'superstrat pel procés de recobriment per centrifugat. CuInxCryGa1-x-ySe2 on x = 0.4, i = (0.0, 0.1, 0.2, 0.3) nanopartícules han estat sintetitzades en primer lloc fent servir un mètode hidrotermal químic humit que es basa en un procés tèrmic sense buit sense cap procés de selenización addicional. Introduint diferents fonts de metall en un autoclau amb etilenamina com solvent, es van obtenir nanopartícules de CIGS a diferents temperatures en un rang de 190- 230 °C. Els resultats de la difracció de raigs X (XRD) van confirmar la formació d'una estructura de calcopirita CuInxCryGa1-x-ySe2 tetragonal. Finalment, es va estudiar l'efecte de la temperatura de recuit en els materials tipus kesterita (com el Cu2ZnSnS4) que són materials de molt baix cost i que no danyen el medi ambient. Vam estudiar el creixement de les pel·lícules primes quaternàries Cu2ZnSnS4 (CZTS) de kesterita mitjançant un dipòsit electroquímic d'un sol pas seguit d'un recuit a baixa temperatura. La influència de diferents atmosferes de recuit a temps de recuit constants (t = 45 min) i paràmetres de control de preparació fixos; és a dir, concentració de la solució de materials de partida (sals de metalls precursors), temps de deposició i potencial d'electrodeposició. Es van estudiar les propietats estructurals, de composició, morfològiques i òptiques, així com les propietats fotoelectroquímiques
Kamal Abdelhamied Saber, S. (2018). Synthesis and characterization of some nano-selenides and their applications in solar cells [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/107389
TESIS
10

Yong, Chaw Keong. "Ultrafast carrier dynamics in organic-inorganic semiconductor nanostructures." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:b2efdc6a-1531-4d3f-8af1-e3094747434c.

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This thesis is concerned with the influence of nanoscale boundaries and interfaces upon the electronic processes that occur within the inorganic semiconductors. Inorganic semiconductor nanowires and their blends with semiconducting polymers have been investigated using state-of-the-art ultrafast optical techniques to provide information on the sub-picosecond to nanosecond photoexcitation dynamics in these systems. Chapters 1 and 2 introduce the theory and background behind the work and present a literature review of previous work utilising nanowires in hybrid organic photovoltaic devices, revealing the performances to date. The experimental methods used during the thesis are detailed in Chapter 3. Chapter 4 describes the crucial roles of surface passivation on the ultrafast dynamics of exciton formation in gallium arsenide (GaAs) nanowires. By passivating the surface states of nanowires, exciton formation via the bimolecular conversion of electron-hole plasma can observed over few hundred picoseconds, in-contrast to the fast carrier trapping in 10 ps observed in the uncoated nanowires. Chapter 5 presents a novel method to passivate the surface-states of GaAs nanowires using semiconducting polymer. The carrier lifetime in the nanowires can be strongly enhanced when the ionization potential of the overcoated semiconducting polymer is smaller than the work function of the nanowires and the surface native oxide layers of nanowires are removed. Finally, Chapter 6 shows that the carrier cooling in the type-II wurtzite-zincblend InP nanowires is reduced by order-of magnitude during the spatial charge-transfer across the type-II heterojunction. The works decribed in this thesis reveals the crucial role of surface-states and bulk defects on the carrier dynamics of semiconductor nanowires. In-addition, a novel approach to passivate the surface defect states of nanowires using semiconducting polymers was developed.

Books on the topic "Mott materials":

1

Uchida, Masaki. Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Tokyo: Springer Japan, 2013.

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1953-, Fujimori A., Tokura Y. 1954-, and Taniguchi International Symposium on the Theory of Condensed Matter (17th : 1994 : Kashikojima, Japan), eds. Spectroscopy of mott insulators and correlated metals: Proceedings of the 17th Taniguchi Symposium, Kashikojima, Japan, October 24-28, 1994. Berlin: Springer, 1995.

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Edwards, P. P. Metal-insulator transitions revisited. London, UK: Taylor & Francis, 1995.

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A, Ghabbour Elham, Davies Geoffrey 1942-, International Humic Substances Society, and Humic Substances Seminar (6th : 2002 : Northeastern University), eds. Humic substances: Nature's most versatile materials. New York: Taylor and Francis, 2004.

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Montserrat, Carles Duarte i. De l'origen dels mots: Materials per a l'ensenyament. Barcelona: Editorial Irina, 1989.

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Helft, Claude. Mes premiers mots Larousse. Paris: Larousse, 1997.

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Chermayeff, Ivan. First words =: Premiers mots. New York: Abrams, 1990.

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Flemish Public Waste Materials Association. Most relevant points from the waste materials plan 1991-1995. Mechelen, Belgium: OVAM (Flemish Public Waste Materials Association), 1991.

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Daniel, Péchoin, ed. Thésaurus: [des idées aux mots, des mots aux idées]. Paris: Larousse, 1999.

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Proell, E. R. Medicinal herbs: Mother nature's most precious gift. [United States]: Landmark Publishers, 1994.

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Book chapters on the topic "Mott materials":

1

Nakano, Masaki, Keisuke Shibuya, Daisuke Okuyama, Takafumi Hatano, Shimpei Ono, Masashi Kawasaki, Yoshihiro Iwasa, et al. "Nanosession: Mott Insulators and Transitions." In Frontiers in Electronic Materials, 115–22. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527667703.ch33.

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Baldini, Edoardo. "Lattice-Mediated Magnetic Order Melting in Multiferroic Mott Insulators." In Nonequilibrium Dynamics of Collective Excitations in Quantum Materials, 249–87. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77498-5_7.

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Jaziri, S. "Electric Field Effect on Frenkel-Wannier-Mott Exciton States in Organic-Inorganic Semiconductor Quantum Wells." In Science and Technology of Polymers and Advanced Materials, 251–58. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4899-0112-5_23.

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Kim, Changman, Tomoya Ohool, Takeshi Tamura, Yasushi Oikawa, Jae-Soo Shin, and Hajime Ozaki. "The Relation Between Peierls and Mott-Hubbard Transition in VO2, by Tunneling Spectroscopy." In Advanced Processing and Manufacturing Technologies for Structural and Multifunctional Materials II, 147–54. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2009. http://dx.doi.org/10.1002/9780470456224.ch15.

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Gould, James. "Some Advice on Application Materials." In Making the Most of the Postdoc, 75–90. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003285458-12.

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Takaishi, S., and M. Yamashita. "Ni(III) Mott–Hubbard Compounds." In Material Designs and New Physical Properties in MX- and MMX-Chain Compounds, 31–37. Vienna: Springer Vienna, 2012. http://dx.doi.org/10.1007/978-3-7091-1317-2_3.

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Takaishi, S., and M. Yamashita. "Pd(III) Mott–Hubbard Compounds." In Material Designs and New Physical Properties in MX- and MMX-Chain Compounds, 39–54. Vienna: Springer Vienna, 2012. http://dx.doi.org/10.1007/978-3-7091-1317-2_4.

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Cashman, John R. "“My Most Unforgettable Incident” (Stories by Knowledgeable Responders)." In Hazardous Materials Emergencies, 231–40. Boca Raton: Routledge, 2022. http://dx.doi.org/10.1201/9780203752302-13.

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Ott, Ulrich. "The Most Primitive Material in Meteorites." In Astromineralogy, 236–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/3-540-45840-9_7.

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Ott, U. "The Most Primitive Material in Meteorites." In Astromineralogy, 277–311. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13259-9_7.

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Conference papers on the topic "Mott materials":

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Liu, Z. J., H. W. Huang, J. Y. Gan, and T. R. Yew. "Polycrystalline ZnO Mott-barrier diodes." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-6-1.

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Kalcheim, Yoav, Eti Barazani, Javier del Valle, Pavel Salev, and Ivan Schuller. "TUNING RESISTIVE SWITCHING IN ENGINEERED MOTT INSULATORS." In Materials, devices and systems for neuromorphic computing 2022. València: Fundació Scito, 2022. http://dx.doi.org/10.29363/nanoge.matnec.2022.009.

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Giannetti, Claudio, Francesco Banfi, Simone Peli, Gabriele Ferrini, Andrea Ronchi, Massimo Capone, Andrea Damascelli, et al. "Ultrafast orbital manipulation and Mott physics in multi-band correlated materials." In Ultrafast Phenomena and Nanophotonics XXII, edited by Markus Betz and Abdulhakem Y. Elezzabi. SPIE, 2018. http://dx.doi.org/10.1117/12.2284783.

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Gunnarsson, O., E. Koch, and R. M. Martin. "Mott transition and superconductivity in alkali-doped fullerides." In The 12th international winterschool on electronic properties of novel materials: progress in molecular nanostructures. AIP, 1998. http://dx.doi.org/10.1063/1.56472.

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Alavani, Bhargav K., Ananya Das, and Ramesh V. Pai. "Melting of Mott phases in spin-1 Bose Hubbard model." In NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020. AIP Publishing, 2021. http://dx.doi.org/10.1063/5.0060918.

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Takenobu, T. "Mott-Hubbard transition and antiferromagnetism in ammoniated alkali fullerides." In The 14th international winterschool on electronic properties of novel materials - molecular nanostructures. AIP, 2000. http://dx.doi.org/10.1063/1.1342462.

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Yajima, T., T. Nishimura, and A. Toriumi. "Solid-State Operation of Mott Transistors with Ultra-Thin VO2 Channels." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.h-3-3.

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Yajima, T., Y. Samata, T. Nishimura, and A. Toriumi. "Impact of Scaling the VO2-Channel Mott Transistor below Material Correlation Length." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.e-4-02.

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Yajima, T., T. Nishimura, and A. Toriumi. "New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.a-5-04.

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Asanuma, S., P. H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, M. Kawasaki, and Y. Iwasa. "Electric-field control of Mott transition in electrolyte-gated (Nd,Sm)NiO3 thin film." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-9-13.

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Reports on the topic "Mott materials":

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Goncharov, A., and V. Struzhkin. Optical Spectroscopy of Strongly Correlated (MOTT-HUBBARD, Heavy-Fermion, Unconventional Superconductor) Materials Tuned Pressure. Office of Scientific and Technical Information (OSTI), November 2003. http://dx.doi.org/10.2172/15013699.

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Jarrell, Mark, Warren Pickett, and Richard Scalettar. Predictive Capability for Strongly Correlated Systems: Mott Transition in MnO, Multielectron Magnetic Moments, and Dynamic Effects in Correlated Materials. Office of Scientific and Technical Information (OSTI), November 2014. http://dx.doi.org/10.2172/1163763.

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Krakauer, Henry, and Shiwei Zhang. Predictive Capability for Strongly Correlated Systems: Mott Transition in MnO, Multielectron Magnetic Moments, and Dynamics Effects in Correlated Materials. Office of Scientific and Technical Information (OSTI), February 2013. http://dx.doi.org/10.2172/1063633.

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Maupin, Julie, and Dr Michael Mamoun. DTPH56-06-T-0004 Plastic Pipe Failure, Risk, and Threat Analysis. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), March 2006. http://dx.doi.org/10.55274/r0012119.

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Abstract:
Reports, publications, papers, and databases were reviewed to better define risks and threats to plastic gas distribution piping. Failure modes were described for plastic PE piping with the most significant being slow crack growth (SCG). Short-term mechanical tests such as tensile, quick burst, melt index, and density tests did not show a correlation with a material's susceptibility to SCG failure. The bend-back test was able to visually identify 1971 low-ductile inner wall materials. PENT test failure times were reported for materials manufactured during the period1972-1985. The PENT test did not show correlations with the material's susceptibility to SCG failure for these materials. Life expectancy was determined to be a key measure of the susceptibility of PE gas pipe materials to SCG field failures. Long-term hydrostatic stress-rupture data combined with the Rate Process Method or with the Bi-Directional Shift Functions predicted the remaining life expectancy of several PE materials at 60�F average field temperature under varying loading conditions. Data showed rock impingement loads and pipe squeeze-offs can result in the greatest reduction in remaining life expectancy. Lower operating field temperatures and pressures significantly increased the predicted remaining life expectancy of PE materials. Fifty-five PE pipe samples that failed in field service were examined in the laboratory to identify the root cause of the failures. Eight of the samples underwent in-depth analysis, which included density and melts index tests and differential scanning calorimetry, infrared spectroscopy, and microscopic examination of the fracture surfaces. The samples were combined with another set of additional data resulting in 45 material, 36 procedural, 12 quality control, and 7 miscellaneous failures. A separate categorization method attributed a total of 321 failures to their respective pipe/component, with most occurring at joints. RCP in large diameter PE materials was investigated through laboratory testing. Critical pressure was determined for 6 pipe materials. The critical temperature was determined for 3 materials.
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Gschwander, Stefan, Ana Lazaro, Monica Delgado, Christoph Rathgeber, Michael Brütting, Stephan Höhlein, Melissa Obermeyer, et al. Summary of Work On development and characterization of improved Materials. IEA SHC Task 58, June 2021. http://dx.doi.org/10.18777/ieashc-task58-2021-0003.

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Abstract:
As the material development is done at different institution the objective of the work was to collect the materials which are under research and development to get an overview on the most relevant properties of these materials and application which are addressed.
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Morrison, K. G. PR-214-9109-R01 Application of Pulsed Gas Metal ARC Welding to Pipeline Construction. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), November 1992. http://dx.doi.org/10.55274/r0011832.

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Evaluates the use of high strength micro-alloyed steels in pipeline construction for the potential savings in material, materials handling, and welding construction costs. Pulsed- Gas Metal Arc Welding (P-GMAW) is considered the most appropriate welding process to join these materials since high quality, low hydrogen welds with excellent mechanical properties are possible.
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Bailey, Sharon A., James M. Alzheimer, Carl P. Baker, Michael A. Catalan, and Patrick L. Valdez. Engineering Study for Materials Open Test Assembly (MOTA)/Shielded Materials Facility (SMF) Waste Removal. Office of Scientific and Technical Information (OSTI), December 2002. http://dx.doi.org/10.2172/15010053.

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Baldwin, Richard. PR-015-084508-R01 Contaminants in Sales Gas Pipelines Sources Removal and Treatment. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), September 2010. http://dx.doi.org/10.55274/r0010029.

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Abstract:
The objective of this project is to provide information about a problem material found in gas pipelines called "black powder". It is a mixture or a chemical compound of iron sulfides, iron oxides, dirt, sand, salts, chlorides, water, glycols, hydrocarbons and compressor oils, mill scale, or other materials. The most common constituents, iron compounds of sulfur or oxygen, are corrosion products. In addition to chemical formation, black powder can be formed by microbes normally found in gas pipelines. This material causes machinery, measurement, and pipeline maintenance problems. This research investigates the forms of iron sulfides, their characteristics, and methods of formation and whether the molecular form can be an indicator of the source of the material. A sampling protocol was developed for proper collection of materials for analysis. Seventeen corrosion samples were collected and analyzed for material constituents and microbial content. The results of this testing were anonymously tabulated in a database. Other tasks in this project include guidelines for removal, handling, and disposal of the material. It discusses symptomatic versus root cause treatments for the prevention and control of black powder, and the corporate culture necessary to manage the problem. It presents recently developed technologies for cleaning or treating a pipeline containing black powder, such as cleaning and anti-microbial agents containing THPS which dissolve iron sulfides, and the use of magnetic filtration. The final task describes concepts for identifying the location of black powder in an operating pipeline and places to look and methods to use to best determine the distribution of the material.
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McKinnon, Mark, and Daniel Madryzkowski. Literature Review to Support the Development of a Database of Contemporary Material Properties for Fire Investigation Analysis. UL Firefighter Safety Research Institute, June 2020. http://dx.doi.org/10.54206/102376/wmah2173.

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Abstract:
The NIJ Technology Working Group’s Operational Requirements (TWG ORs) for Fire and Arson Investigation have included several scientific research needs that require knowledge of the thermophysical properties of materials that are common in the built environment, and therefore likely to be involved in a fire scene. The specific areas of research include: adequate materials property data inputs for accurate computer models, understanding the effect of materials properties on the development and interpretation of fire patterns, and evaluation of incident heat flux profiles to walls and neighboring items in support of fire model validation. These topics certainly address, in a concise way, many of the gaps that limit the analysis capability of fire investigators and engineers. Each of the three aforementioned research topics rely, in part, on accurate knowledge of the physical conditions of a material prior to the fire, how the material will respond to the exposure of heat, and how it will perform once it has ignited. This general information is required to visually assess a fire scene. The same information is needed by investigators to estimate the evolution and consequences of a fire incident using a computer model. Data sources that are currently most commonly used to determine the required properties and model inputs are outdated and incomplete. This report includes the literature review used to provide a technical approach to developing a materials database for use in fire investigations and computational fire models. A summary of the input from the project technical panel is presented which guided the initial selection of materials to be included in the database as well as the selection of test measurements.
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Hamilton, M. L., and R. M. Ermi. Preparation and irradiation of the fusion MOTA (Materials Open Test Assembly) 2A. Office of Scientific and Technical Information (OSTI), June 1990. http://dx.doi.org/10.2172/6168523.

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