Academic literature on the topic 'Mott materials'
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Journal articles on the topic "Mott materials":
Kiffner, Martin, Jonathan Coulthard, Frank Schlawin, Arzhang Ardavan, and Dieter Jaksch. "Mott polaritons in cavity-coupled quantum materials." New Journal of Physics 21, no. 7 (July 31, 2019): 073066. http://dx.doi.org/10.1088/1367-2630/ab31c7.
Furukawa, Tetsuya, Kazuya Miyagawa, Hiromi Taniguchi, Reizo Kato, and Kazushi Kanoda. "Quantum criticality of Mott transition in organic materials." Nature Physics 11, no. 3 (February 9, 2015): 221–24. http://dx.doi.org/10.1038/nphys3235.
Feng, Dong-Lai. "Mott physics — one of main themes in quantum materials." Acta Physica Sinica 72, no. 23 (2023): 237101. http://dx.doi.org/10.7498/aps.72.20231508.
Wang, Yue, Kyung-Mun Kang, Minjae Kim, Hong-Sub Lee, Rainer Waser, Dirk Wouters, Regina Dittmann, J. Joshua Yang, and Hyung-Ho Park. "Mott-transition-based RRAM." Materials Today 28 (September 2019): 63–80. http://dx.doi.org/10.1016/j.mattod.2019.06.006.
Inoue, Isao H., and Marcelo J. Rozenberg. "Taming the Mott Transition for a Novel Mott Transistor." Advanced Functional Materials 18, no. 16 (August 22, 2008): 2289–92. http://dx.doi.org/10.1002/adfm.200800558.
Gavrichkov, Vladimir A. "A simple metal–insulator criterion for the doped Mott–Hubbard materials." Solid State Communications 208 (April 2015): 11–14. http://dx.doi.org/10.1016/j.ssc.2015.02.014.
Tan, Yuting, Vladimir Dobrosavljević, and Louk Rademaker. "How to Recognize the Universal Aspects of Mott Criticality?" Crystals 12, no. 7 (June 30, 2022): 932. http://dx.doi.org/10.3390/cryst12070932.
Brandow, Baird. "The physics of Mott electron localization." Journal of Alloys and Compounds 181, no. 1-2 (April 1992): 377–96. http://dx.doi.org/10.1016/0925-8388(92)90334-6.
LaGasse, Samuel W., Prathamesh Dhakras, Kenji Watanabe, Takashi Taniguchi, and Ji Ung Lee. "Schottky-Mott Limit: Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit (Adv. Mater. 24/2019)." Advanced Materials 31, no. 24 (June 2019): 1970169. http://dx.doi.org/10.1002/adma.201970169.
H�fner, S. "Mott insulation in transition metal compounds." Zeitschrift f�r Physik B Condensed Matter 61, no. 2 (June 1985): 135–38. http://dx.doi.org/10.1007/bf01307767.
Dissertations / Theses on the topic "Mott materials":
Lantz, Gabriel. "Ultrafast electron dynamics in Mott materials." Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112014/document.
Mott insulators are a perfect example of how local electronic correlations can change macroscopic properties of materials. Varying slightly the doping or the pressure can transform a metal to an insulator. These properties can be modified extremely rapidly by driving these materials far from equilibrium. We have investigated the model Mott-Hubbard material Cr-doped V2O3 using state of the art pump-probe techniques, namely angle resolved photoelectron spectroscopy, optical reflectivity, THz time-domain spectroscopy, and X-ray diffraction. We were able to unequivocally disentangle the electronic and the lattice response of the system to a femtosecond laser excitation, which was kept in all cases at a wavelength of 800 nm. We present a comparative study of these transient responses, which demonstrates the strong electron-phonon coupling of this strongly correlated model material. We show that before thermalization, spectral weight is transferred from the lower Hubbard band towards the Mott gap. On a longer time scale a metastable state is stabilized by the lattice structure. To further understand the transient response of Mott insulators, we have also studied another Mott compound, BaCo1-xNixS2. The general trends of photoexcitation in Mott insulators are analyzed using a two orbital model. We argue that the filling of the gap can be due to a change of the specific orbital fillings
Scheiderer, Philipp [Verfasser], and Ralph [Gutachter] Claessen. "Spectroscopy of Prototypical Thin Film Mott Materials / Philipp Scheiderer ; Gutachter: Ralph Claessen." Würzburg : Universität Würzburg, 2019. http://d-nb.info/1193423899/34.
Winograd, Emilio. "Orbital-selectivity in strongly correlated fermionic systems. From materials to cold-atoms." Thesis, Paris 11, 2013. http://www.theses.fr/2013PA112031.
This thesis focuses on multiorbital aspects of strongly correlated fermionic systems. In particular, it focuses on the existence of orbital differentiation in which coexistence of itinerant and localized character can be associated to different orbitals. This subject is discussed in the context of cold atoms and materials, providing a bridge between both communities.In the first part of the thesis, we give an insight into the problem of strong correlations in materials, and we introduce the concept of 'orbital-selective Mott transition'. We also provide the main tools to understand how materials can be simulated with cold atoms experiments, and we present important related results in the context of the metal-Mott insulator transition. The technical aspects, based on dynamical mean-field theory are also discussed, and the solution of two key models of strongly correlated fermionic systems, i.e., the Hubbard model (HM) and the Falicov-Kimball model (FKM), are reviewed.Then we study in detail the physics of two interacting fermionic species with different masses in an optical lattice. We establish the different phases (with and without long-range order) in terms of the interactions strength (U), mass ratio and temperature (T), and also discuss the thermodynamic variables, which are relevant in cold atoms experiments. We show that in the metallic phase (U below a critical value) and for some degree of mass imbalance, a crossover appears between a Fermi-liquid metallic state at low T, and an 'orbital-selective' state at higher T, where the heavy fermions effectively localize while the light species remain itinerant. Hence, we propose this minimal model for addressing orbital-selective physics with cold atoms experiments.Based on the properties of the studied model, we propose the 'entropic chromatography' as a new method for cooling fermionic atoms in optical lattices. We discuss its efficiency and limitations, and provide some ideas in order to overcome them.In the last part of the thesis we generalize the previous model to a model relevant for multiband correlated materials that can display orbital differentiation. We show that the orbital-selective Mott state can be stable under lattice distortions modeled by local hybridization between the orbitals. However, the Mott state is characterized by a pseudogap, where charge fluctuations abruptly reduce, but the state remains compressible. In connection with the previous model, we discuss the temperature-induced orbital-selective crossover in this problem, we compare our results with photoemission experiments, and predict what would happen in materials that display local hybridization between the bands
Sagaidak, Iryna. "Bi-functional materials combining energy storage and energy conversion from sunlight." Thesis, Amiens, 2019. http://www.theses.fr/2019AMIE0025.
The problem of intermittent nature of solar energy is often addressed by the traditional coupling of the PV and battery units. Our more fundamental approach targets the development of materials able to combine solar energy conversion and storage at the molecular level. The 5 nm anatase TiO2 nanocrystals were synthesized in our group affording a quantitative photorecharge reaction by a sole contribution of illumination. Here, we present a study of the evolution of the optoelectronic properties and dynamics of charge transfer in TiO2 electrode using in situ / in operando experiments performed during the battery functioning (UV-visible, Mott-Schottky, fluorescence spectroscopy). The increase of the bandgap value and the rise of absorbance are observed upon lithium insertion into TiO2. A negative shift of the conduction band indicates a more oxidizing potential of the photogenerated holes in Li0.6TiO2 compared to TiO2. By analysis of the recombination processes in TiO2 upon lithium insertion, we established a competition of the ultra-fast (ps range) processes of direct recombination and charge transfer towards Ti3+ in Li0.6TiO2, potentially limiting the yield of the photorecharge reaction. This study was extended to other insertion materials typically used in lithium-ion batteries (Li4Ti5O12, LiCoO2, LiFePO4, MoO3, etc.). The measured band edge positions, band gap, charge carrier type and concentration were gathered into a database, based on which the fundamental evaluation of the possibility of the light-induced photorecharge was conducted. The first results of the photoelectrochemical study of chosen materials are also discussed
Leriche, Raphaël. "Unconventional superconductivity in quasi-2D materials with strong spin-orbit coupling." Thesis, Sorbonne université, 2019. http://www.theses.fr/2019SORUS577.
The realization of topological superconductors is one of the main current goals of condensed matter physics. It was indeed predicted that such systems should host Majorana fermions. These Majorana fermions possess both a non-Abelian statistics and, because of their topological origin, a certain robustness against local disorder, which makes them attractive for quantum computing applications. One approach likely to lead to topological superconductivity consists in considering superconducting systems with strong spin-orbit coupling and with broken inversion symmetry. It is in this framework that, during this thesis, I performed scanning tunneling microscopy and spectroscopy measurements on quasi-2D materials : (LaSe)1,14(NbSe2)2 and Sr2IrO4. I first studied the electronic properties of misfit compound LaNb2Se5, which is a parent of transition metal dichalcogenide 2H-NbSe2. (LaSe)1,14(NbSe2)2 is a heterostructure made out of alternations of NbSe2 bilayers with trigonal prismatic geometry and LaSe bilayers with rocksalt structure. (LaSe)1,14(NbSe2)2 is a potential candidate for topological superconductivity because of the presence of both a strong spin-orbit coupling and of broken inversion symmetry in NbSe2 planes. Here, I present spectroscopic results showing that the electronic structure of(LaSe)1,14(NbSe2)2 is very similar to the one of electron-doped monolayer NbSe2 with a shift of the chemical potential of 0,3 eV, priorly never reached. I could also demonstrate the quasi- 2D nature of (LaSe)1,14(NbSe2)2 and more particularly the presence of a strong Ising spinorbit coupling. Moreover, the observed weakness of superconductivity against non-magnetic disorder combined with quasiparticle interferences measurements allowed me to exhibit the unconventional nature of (LaSe)1,14(NbSe2)2 superconducting order parameter. This study opens the possibility to use misfit heterostructures such as (LaSe)1,14(NbSe2)2 to study thephysics of transition metal dichalcogenides in the 2D limit, for which many theoretical studies predict topological superconductivity. In this thesis, I also present a study on the effects of doping on the electronic properties of iridate compound Sr2IrO4. Sr2IrO4 is a spin-orbit induced Mott insulator. Because inversion symmetry is locally broken in Sr2IrO4, some theoretical predictions suggest that Sr2IrO4 should turn into a topological superconductor once doped. Here, I exhibit a nanometer-scaleinhomogeneous doping-driven Mott insulator to pseudo-metallic phase transition. This work further justifies the importance of using a local probe such as scanning tunnelling microscopy in order to complete results on Mott physics obtained by integrative methods like angle-resolved photoemission spectroscopy
Koussir, Houda. "Multiscale study of the electric field induced transition in the Mott phase of GaMo4S8 crystals and TaSe2 monolayers." Electronic Thesis or Diss., Université de Lille (2022-....), 2024. http://www.theses.fr/2024ULILN004.
In the realm of condensed matter physics, Mott insulators are essential for exploring complex electronic phenomena, with significant implications for high-temperature superconductivity and quantum spin liquids. This thesis investigates two types of such materials, distinguished by their dimensionality : GaMo4S8 crystals and monolayer 1T-TaSe2.After presenting their properties in the first chapter, the second chapter addresses the local-scale characterization techniques used to characterize both materials, namely scanning tunneling microscopy and spectroscopy for structural and electronic studies, and multi-tip scanning tunneling microscopy for transport measurements. The latter technique was particularly employed to analyze transport in GaMo4S8. The study then delved into the material response to external electric fields, examining the threshold electric field in relation to the electrode geometry and exploring the temporal evolution of switching times in connection with inter-electrode distances. The achievement of volatile transitions opens prospects for applications such as the operation of a microneuron at room temperature.To enhance the control over phase transition properties of Mott insulators, it is beneficial to consider two-dimensional systems where the current flow is restricted within the crystal plane. The final chapter focuses on the 1T phase of TaSe2, epitaxially grown on gallium phosphide (GaP) semiconductor substrates. Low-temperature scanning tunneling microscopy studies reveal that 1T-TaSe2 monolayers exhibit not only the characteristic charge density modulation (Star of David) of the charge density wave phase but also a unique Moiré pattern due to the monolayer interaction with the GaP substrate. Scanning tunneling spectroscopy has identified a bandgap, hallmark of the Mott insulating state. This state is further substantiated by temperature-dependent transport measurements that show the persistence of the insulating phase up to 400 kelvins. Notably, spectroscopic measurements with varying tip-to-surface distances have unveiled insulator to metal transitions at low temperatures. The observation of such transitions suggests that this large-scale heterostructure could be a material of choice for neuromorphic applications
Forino, Paola Caterina. "Nuclear magnetic resonance study of the electron doped Dirac-Mott Insulator double perovskite Ba2Na(1-x)CaxOsO6." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020.
Boissy, Clément. "Transport de matière au sein du film passif : Développement d’une méthodologie sélective corrélant les Point Defect Model et les modèles descriptifs." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0136.
Developments in metallic bipolar plate, to apply more widely fuel cells, require an improved of the constitutive material. The use of stainless steel calls for a good understanding of the passive film. The required specifications are for good electrical conductivity and a long life-time. Those two parameters correspond to a correlation between the semiconductive properties and the good corrosion behavior. Nevertheless, the main problems of the passivity lie on the multiplicity of the phenomena that alter the passive film behavior. Numerous models described in the literature can be used to characterize the passivation. The Point Defect Model (PDM) describes the passivation through electrochemical reactions at the metal / oxide and at the oxide / electrolyte interfaces. The reactivity is limited by mass transport through the oxide. From the literature, those phenomena seems to be a discriminating parameter in the choice of a model. The selective method proposed allows us to use each model taking into account their specifics. This methodology is based on the correlation between the mass transport characterization, thanks to the PDM, and the analysis of the Electrochemical Impedance Spectroscopy (EIS). The PDM determines the transport coefficient apart from EIS measurements, so to validate the consideration of the mass transport during the analysis of the electrochemical impedance spectra. The evolution of the main charge carrier density as a function of the oxide formation potential allows us to calculate the transport coefficient from PDM equations. Thanks to the thickness of the oxide (determined by X-ray Photoelectron Spectroscopy), the time constant of the mass transport is determined. Based on this value, a descriptive model is used to analyze the EIS data, avoiding overparametrization. This method is applied first on a model material, pure chromium exposed to acidic solution (pH 2) at several temperatures (30°C and 80°C). It shows that the mass transport has to be taken into account at 80°C and the EIS model considers an inner chromium oxide layer and an outer chromium hydroxide. Secondly, the method is used to characterize an industrial material, AISI 316L stainless steel, at several pH (1, 2 and 3) and at several temperatures (30°C and 80°C). In this case, the oxide is describe as a p-n semiconductor junction with an chromium rich inner layer and an outer iron rich layer. The present methodology permits to deeply characterize the AISI 316L stainless steel. Even if this study concerns the substrate, this step is decisive to improve the performances of the metallic bipolar plates
Kamal, Abdelhamied Saber Suzan. "Synthesis and characterization of some nano-selenides and their applications in solar cells." Doctoral thesis, Universitat Politècnica de València, 2018. http://hdl.handle.net/10251/107389.
Abstract Increasing global energy consumption together with environmental concerns has led to much interest in alternative, cleaner sources of energy such as solar photovoltaic. Researchers in the solar cell community have been looking for ways to reduce costs while maintaining or increasing already high efficiencies. A fundamental understanding of the materials under consideration is essential to rapid development of new technologies. The I-III-VI2 thin films offer promising systems for achieving high efficiency solar cells at lower costs. In fact, by tailoring the chemistry of the compounds it is possible to change the bandgap of the material in order to collect sunlight more efficiently. First of all, this thesis focuses on absorber layer material preparation and characterization, especially nanocrystalline thin films and consideration of both structural and electrical characteristics of such main cell absorber layer.The thesis examines how different preparation techniques and material usage could affect the properties of the synthesized thin films (absorber layer). In this study CuInSe2 and CuInS2 thin films were deposited onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on the electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe2/CuInS2 showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. The optical properties of annealed CuInSe2-Se and CuInSe2-S thin films have been studied in order to determine the effect of annealing process in different selenium and sulfur atmosphere. In the second step we modified copper indium CuInxCryGa1-x-ySe2 where x=0.4, y= (0.0, 0.1, 0.2, 0.3)superstrate layer by spin coating process. CuInxCryGa1-x-ySe2 where x=0.4, y= (0.0, 0.1, 0.2, 0.3) nanoparticles have been synthesized firstly using a wet chemical hydrothermal method that is based on a non-vacuum thermal process without any additional selenization process. Introducing different metal sources in an autoclave with ethylenediamine as solvent, CIGS nanoparticles were obtained at different temperatures range 190-230°C. The X-ray diffraction (XRD) results confirmed the formation of a tetragonal CuInxCryGa1-x-ySe2 chalcopyrite structure. Finally, we turned again to the study of the annealing temperature effect onKesterite materials but this time in those of very low-cost materials and environmentally friendly Cu2ZnSnS4. We studied the growth of quaternary Cu2ZnSnS4 (CZTS) kesterite thin films by a single step electrochemical deposition followed by annealing at low temperature. The influence of different annealing atmospheres at constant annealing times (t = 45 min) and fixed preparation controlling parameters; i.e., starting materials (precursor metal salts) solution concentration, time of deposition and electrodeposition potential. Structural, compositional, morphological, and optical properties, as well as photoelectrochemical properties were studied.
Resum (Valencià) L'augment del consum d'energia global juntament amb les preocupacions ambientals ha generat molt d'interès per les fonts d'energia alternatives i netes, com ara l'energia solar fotovoltaica. Els investigadors de la comunitat fotovoltaica han estat buscant formes de reduir costos mentre mantenen o augmenten les eficiències. Una millor comprensió dels materials implicats és essencial per al ràpid desenvolupament de noves tecnologies. Les pel·lícules primes I-III-VI2 ofereixen sistemes prometedors per aconseguir cèl·lules solars d'alta eficiència a un cost menor. De fet, en adaptar la composició dels compostos, és possible canviar la banda prohibida del material per captar la llum solar de manera més eficient. Aquesta tesi se centra en la preparació i caracterització del material de la capa absorbent, especialment les pel·lícules primes nanocristal·lines i la consideració de les característiques estructurals i elèctriques d'aquesta capa principal absorbent de cèl·lules. La tesi examina com les diferents tècniques de preparació i ús del material podrien afectar les propietats del pel·lícules primes sintetitzades. Pel·lícules primes CuInSe2 i CuInS2 es van dipositar sobre substrats de vidre ITO usant la tècnica d'electrodeposició en solució aquosa. Les pel·lícules electrodepositadas es van caracteritzar per difracció de raigs X (XRD), microscòpia electrònica de rastreig (SEM) i anàlisi de raigs X d'energia dispersiva (EDS). Es van investigar els efectes de recuit sobre els precursors electrodepositados. L'estructura de calcopirita de CuInSe2/CuInS2 va mostrar una millora de la cristal·linitat després del tractament posterior de selenització/sulfurització en atmosfera de Se o S, respectivament. Els estudis de XRD i SEM van revelar una millora de la qualitat cristal·lina de les pel·lícules de CIS després dels tractaments tèrmics. Les propietats òptiques de les pel·lícules primes recuites CuInSe2-Es i CuInSe2-S s'han estudiat per determinar l'efecte del procés de recuit en diferents ambients de seleni i sofre. A més, modifiquem el CuInxCryGa1-x-ySe2 de coure indi, on x = 0.4, i = (0.0, 0.1, 0.2, 0.3) la capa d'superstrat pel procés de recobriment per centrifugat. CuInxCryGa1-x-ySe2 on x = 0.4, i = (0.0, 0.1, 0.2, 0.3) nanopartícules han estat sintetitzades en primer lloc fent servir un mètode hidrotermal químic humit que es basa en un procés tèrmic sense buit sense cap procés de selenización addicional. Introduint diferents fonts de metall en un autoclau amb etilenamina com solvent, es van obtenir nanopartícules de CIGS a diferents temperatures en un rang de 190- 230 °C. Els resultats de la difracció de raigs X (XRD) van confirmar la formació d'una estructura de calcopirita CuInxCryGa1-x-ySe2 tetragonal. Finalment, es va estudiar l'efecte de la temperatura de recuit en els materials tipus kesterita (com el Cu2ZnSnS4) que són materials de molt baix cost i que no danyen el medi ambient. Vam estudiar el creixement de les pel·lícules primes quaternàries Cu2ZnSnS4 (CZTS) de kesterita mitjançant un dipòsit electroquímic d'un sol pas seguit d'un recuit a baixa temperatura. La influència de diferents atmosferes de recuit a temps de recuit constants (t = 45 min) i paràmetres de control de preparació fixos; és a dir, concentració de la solució de materials de partida (sals de metalls precursors), temps de deposició i potencial d'electrodeposició. Es van estudiar les propietats estructurals, de composició, morfològiques i òptiques, així com les propietats fotoelectroquímiques
Kamal Abdelhamied Saber, S. (2018). Synthesis and characterization of some nano-selenides and their applications in solar cells [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/107389
TESIS
Yong, Chaw Keong. "Ultrafast carrier dynamics in organic-inorganic semiconductor nanostructures." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:b2efdc6a-1531-4d3f-8af1-e3094747434c.
Books on the topic "Mott materials":
Uchida, Masaki. Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Tokyo: Springer Japan, 2013.
1953-, Fujimori A., Tokura Y. 1954-, and Taniguchi International Symposium on the Theory of Condensed Matter (17th : 1994 : Kashikojima, Japan), eds. Spectroscopy of mott insulators and correlated metals: Proceedings of the 17th Taniguchi Symposium, Kashikojima, Japan, October 24-28, 1994. Berlin: Springer, 1995.
Edwards, P. P. Metal-insulator transitions revisited. London, UK: Taylor & Francis, 1995.
A, Ghabbour Elham, Davies Geoffrey 1942-, International Humic Substances Society, and Humic Substances Seminar (6th : 2002 : Northeastern University), eds. Humic substances: Nature's most versatile materials. New York: Taylor and Francis, 2004.
Montserrat, Carles Duarte i. De l'origen dels mots: Materials per a l'ensenyament. Barcelona: Editorial Irina, 1989.
Helft, Claude. Mes premiers mots Larousse. Paris: Larousse, 1997.
Chermayeff, Ivan. First words =: Premiers mots. New York: Abrams, 1990.
Flemish Public Waste Materials Association. Most relevant points from the waste materials plan 1991-1995. Mechelen, Belgium: OVAM (Flemish Public Waste Materials Association), 1991.
Daniel, Péchoin, ed. Thésaurus: [des idées aux mots, des mots aux idées]. Paris: Larousse, 1999.
Proell, E. R. Medicinal herbs: Mother nature's most precious gift. [United States]: Landmark Publishers, 1994.
Book chapters on the topic "Mott materials":
Nakano, Masaki, Keisuke Shibuya, Daisuke Okuyama, Takafumi Hatano, Shimpei Ono, Masashi Kawasaki, Yoshihiro Iwasa, et al. "Nanosession: Mott Insulators and Transitions." In Frontiers in Electronic Materials, 115–22. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527667703.ch33.
Baldini, Edoardo. "Lattice-Mediated Magnetic Order Melting in Multiferroic Mott Insulators." In Nonequilibrium Dynamics of Collective Excitations in Quantum Materials, 249–87. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77498-5_7.
Jaziri, S. "Electric Field Effect on Frenkel-Wannier-Mott Exciton States in Organic-Inorganic Semiconductor Quantum Wells." In Science and Technology of Polymers and Advanced Materials, 251–58. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4899-0112-5_23.
Kim, Changman, Tomoya Ohool, Takeshi Tamura, Yasushi Oikawa, Jae-Soo Shin, and Hajime Ozaki. "The Relation Between Peierls and Mott-Hubbard Transition in VO2, by Tunneling Spectroscopy." In Advanced Processing and Manufacturing Technologies for Structural and Multifunctional Materials II, 147–54. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2009. http://dx.doi.org/10.1002/9780470456224.ch15.
Gould, James. "Some Advice on Application Materials." In Making the Most of the Postdoc, 75–90. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003285458-12.
Takaishi, S., and M. Yamashita. "Ni(III) Mott–Hubbard Compounds." In Material Designs and New Physical Properties in MX- and MMX-Chain Compounds, 31–37. Vienna: Springer Vienna, 2012. http://dx.doi.org/10.1007/978-3-7091-1317-2_3.
Takaishi, S., and M. Yamashita. "Pd(III) Mott–Hubbard Compounds." In Material Designs and New Physical Properties in MX- and MMX-Chain Compounds, 39–54. Vienna: Springer Vienna, 2012. http://dx.doi.org/10.1007/978-3-7091-1317-2_4.
Cashman, John R. "“My Most Unforgettable Incident” (Stories by Knowledgeable Responders)." In Hazardous Materials Emergencies, 231–40. Boca Raton: Routledge, 2022. http://dx.doi.org/10.1201/9780203752302-13.
Ott, Ulrich. "The Most Primitive Material in Meteorites." In Astromineralogy, 236–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/3-540-45840-9_7.
Ott, U. "The Most Primitive Material in Meteorites." In Astromineralogy, 277–311. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13259-9_7.
Conference papers on the topic "Mott materials":
Liu, Z. J., H. W. Huang, J. Y. Gan, and T. R. Yew. "Polycrystalline ZnO Mott-barrier diodes." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-6-1.
Kalcheim, Yoav, Eti Barazani, Javier del Valle, Pavel Salev, and Ivan Schuller. "TUNING RESISTIVE SWITCHING IN ENGINEERED MOTT INSULATORS." In Materials, devices and systems for neuromorphic computing 2022. València: Fundació Scito, 2022. http://dx.doi.org/10.29363/nanoge.matnec.2022.009.
Giannetti, Claudio, Francesco Banfi, Simone Peli, Gabriele Ferrini, Andrea Ronchi, Massimo Capone, Andrea Damascelli, et al. "Ultrafast orbital manipulation and Mott physics in multi-band correlated materials." In Ultrafast Phenomena and Nanophotonics XXII, edited by Markus Betz and Abdulhakem Y. Elezzabi. SPIE, 2018. http://dx.doi.org/10.1117/12.2284783.
Gunnarsson, O., E. Koch, and R. M. Martin. "Mott transition and superconductivity in alkali-doped fullerides." In The 12th international winterschool on electronic properties of novel materials: progress in molecular nanostructures. AIP, 1998. http://dx.doi.org/10.1063/1.56472.
Alavani, Bhargav K., Ananya Das, and Ramesh V. Pai. "Melting of Mott phases in spin-1 Bose Hubbard model." In NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020. AIP Publishing, 2021. http://dx.doi.org/10.1063/5.0060918.
Takenobu, T. "Mott-Hubbard transition and antiferromagnetism in ammoniated alkali fullerides." In The 14th international winterschool on electronic properties of novel materials - molecular nanostructures. AIP, 2000. http://dx.doi.org/10.1063/1.1342462.
Yajima, T., T. Nishimura, and A. Toriumi. "Solid-State Operation of Mott Transistors with Ultra-Thin VO2 Channels." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.h-3-3.
Yajima, T., Y. Samata, T. Nishimura, and A. Toriumi. "Impact of Scaling the VO2-Channel Mott Transistor below Material Correlation Length." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.e-4-02.
Yajima, T., T. Nishimura, and A. Toriumi. "New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.a-5-04.
Asanuma, S., P. H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, M. Kawasaki, and Y. Iwasa. "Electric-field control of Mott transition in electrolyte-gated (Nd,Sm)NiO3 thin film." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-9-13.
Reports on the topic "Mott materials":
Goncharov, A., and V. Struzhkin. Optical Spectroscopy of Strongly Correlated (MOTT-HUBBARD, Heavy-Fermion, Unconventional Superconductor) Materials Tuned Pressure. Office of Scientific and Technical Information (OSTI), November 2003. http://dx.doi.org/10.2172/15013699.
Jarrell, Mark, Warren Pickett, and Richard Scalettar. Predictive Capability for Strongly Correlated Systems: Mott Transition in MnO, Multielectron Magnetic Moments, and Dynamic Effects in Correlated Materials. Office of Scientific and Technical Information (OSTI), November 2014. http://dx.doi.org/10.2172/1163763.
Krakauer, Henry, and Shiwei Zhang. Predictive Capability for Strongly Correlated Systems: Mott Transition in MnO, Multielectron Magnetic Moments, and Dynamics Effects in Correlated Materials. Office of Scientific and Technical Information (OSTI), February 2013. http://dx.doi.org/10.2172/1063633.
Maupin, Julie, and Dr Michael Mamoun. DTPH56-06-T-0004 Plastic Pipe Failure, Risk, and Threat Analysis. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), March 2006. http://dx.doi.org/10.55274/r0012119.
Gschwander, Stefan, Ana Lazaro, Monica Delgado, Christoph Rathgeber, Michael Brütting, Stephan Höhlein, Melissa Obermeyer, et al. Summary of Work On development and characterization of improved Materials. IEA SHC Task 58, June 2021. http://dx.doi.org/10.18777/ieashc-task58-2021-0003.
Morrison, K. G. PR-214-9109-R01 Application of Pulsed Gas Metal ARC Welding to Pipeline Construction. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), November 1992. http://dx.doi.org/10.55274/r0011832.
Bailey, Sharon A., James M. Alzheimer, Carl P. Baker, Michael A. Catalan, and Patrick L. Valdez. Engineering Study for Materials Open Test Assembly (MOTA)/Shielded Materials Facility (SMF) Waste Removal. Office of Scientific and Technical Information (OSTI), December 2002. http://dx.doi.org/10.2172/15010053.
Baldwin, Richard. PR-015-084508-R01 Contaminants in Sales Gas Pipelines Sources Removal and Treatment. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), September 2010. http://dx.doi.org/10.55274/r0010029.
McKinnon, Mark, and Daniel Madryzkowski. Literature Review to Support the Development of a Database of Contemporary Material Properties for Fire Investigation Analysis. UL Firefighter Safety Research Institute, June 2020. http://dx.doi.org/10.54206/102376/wmah2173.
Hamilton, M. L., and R. M. Ermi. Preparation and irradiation of the fusion MOTA (Materials Open Test Assembly) 2A. Office of Scientific and Technical Information (OSTI), June 1990. http://dx.doi.org/10.2172/6168523.