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Relevant bibliographies by topics / MoTe2-MoS2

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Journal articles

Academic literature on the topic 'MoTe2-MoS2'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "MoTe2-MoS2"

1

Zhu, Xuesong, Dahao Wu, Shengzhi Liang, and Jing Liu. "Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure." Nanotechnology 34, no. 15 (2023): 155502. http://dx.doi.org/10.1088/1361-6528/acb359.

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Abstract Flexible electronic and optoelectronic devices are highly desirable for various emerging applications, such as human-computer interfaces, wearable medical electronics, flexible display, etc. Layered two-dimensional (2D) material is one of the most promising types of materials to develop flexible devices due to its atomically thin thickness, which gives it excellent flexibility and mechanical endurance. However, the 2D material devices fabricated on flexible substrate inevitably suffer from mechanical deformation, which can severely affect device performances, resulting in function degradation and even failure. In this work, we propose a strain insensitive flexible photodetector based on MoS2/MoTe2 heterostructure on polyimide substrate, which provides a feasible approach to cancel unpredicted impacts of strain on the device performances. Specifically, the MoS2/MoTe2 heterostructure is deposited with 4 electrodes to form three independent devices of MoS2 FET, MoTe2 FET and MoS2/MoTe2 heterojunction. Among them, the MoS2/MoTe2 heterojunction is used as the photodetector, while the MoS2 FET is used as a strain gauge to calibrate the photo detection result. Such configuration is enabled by the Schottky barrier formed between the electrodes and the MoS2 flake, which leads to obvious and negligible photo response of MoS2/MoTe2 heterojunction and MoS2 FET, respectively, under low source-drain bias (ex. 10 mV). The experimental results show that the proposed mechanism can not only calibrate the photo response to cancel strain effect, but also successfully differentiate the wavelength (with fixed power) or power (with fixed wavelength) of light illumination.

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2

Grajcarova, Liliana, Michaela Riflikova, Roman Martonak, and Erio Tosatti. "Structural and electronic behaviour of MoS2, MoSe2and MoTe2at high pressure." Acta Crystallographica Section A Foundations and Advances 70, a1 (2014): C1619. http://dx.doi.org/10.1107/s2053273314083806.

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Using ab initio calculations and metadynamics simulations we studied the behaviour of layered semiconducting transition metal dichalcogenides, MoX2 (X = S, Se, Te) at high pressure with focus on structural transitions and metallization [1,2]. We found that concerning structure, the behaviour of MoS2 is different from that of MoSe2 and MoTe2. In MoS2 pressure induces at 20 GPa a structural transition where layer sliding takes place, bringing the initial 2Hc stacking to a 2Ha stacking typical of e.g. 2H-NbSe2. This finding naturally explains previous X-ray diffraction and Raman spectroscopy data and was very recently confirmed by new X-ray diffraction experiments[3]. On the other hand, this transition does not occur in MoSe2 and MoTe2 where instead the initial 2Hc stacking remains stable. Besides structural changes pressure in MoS2 induces also a semiconductor - semimetal transition which takes place by band overlap and closing of indirect band gap. This electronic transition occurs in the same region where the structural transition takes place, at 25 GPa in the 2Hc phase and at 20 GPa in the 2Ha phase. In case of MoSe2 and MoTe2 a very similar electronic transition leading to semimetal is predicted to occur at 28 GPa and 13 GPa, respectively. All three materials exhibit after metallization a low density of states at the Fermi level implying low superconducting temperature (if any). Due to absence of structural transition in the metallization region MoSe2 and MoTe2 could be suitable candidate materials for observation of the excitonic insulator phase.

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3

Park, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (2023): 140. http://dx.doi.org/10.3390/mi14010140.

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The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488–1550 nm).

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4

Hibino, Y., S. Ishihara, N. Sawamoto, et al. "Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition." MRS Advances 2, no. 29 (2017): 1557–62. http://dx.doi.org/10.1557/adv.2017.125.

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ABSTRACTWe report the synthesis of MoS2(1-x)Te2x by co-sputtering deposition and effect of mixture on its bandgap. The deposition was carried out at room temperature, and the sputtering power on individual MoS2 and MoTe2 targets were varied to obtain films with different compositions. Investigation with X-ray photoelectron spectroscopy confirmed the formation of Mo-Te and Mo-S bonds after post-deposition annealing (PDA), and one of the samples exhibited composition ratio of Mo:S:Te = 1:1.2:0.8 and 1:1.9:0.1 achieving 1:2 ratio of metal to chalcogen. Bandgap of MoS1.2Te0.8 and MoS1.9Te0.1 was evaluated with Tauc plot analysis from the extinction coefficient obtained by spectroscopic ellipsometry measurements. The obtained bandgaps were 1.0 eV and 1.3 eV. The resulting bandgap was lower than that of bulk MoS2 and higher than that of bulk MoTe2 suggesting mixture of both materials was achieved by co-sputtering.

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5

Chikukwa, Evernice, Edson Meyer, Johannes Mbese, and Nyengerai Zingwe. "Colloidal Synthesis and Characterization of Molybdenum Chalcogenide Quantum Dots Using a Two-Source Precursor Pathway for Photovoltaic Applications." Molecules 26, no. 14 (2021): 4191. http://dx.doi.org/10.3390/molecules26144191.

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The drawbacks of utilizing nonrenewable energy have quickened innovative work on practical sustainable power sources (photovoltaics) because of their provision of a better-preserved decent environment which is free from natural contamination and commotion. Herein, the synthesis, characterization, and application of Mo chalcogenide nanoparticles (NP) as alternative sources in the absorber layer of QDSSCs is discussed. The successful synthesis of the NP was confirmed as the results from the diffractive peaks obtained from XRD which were positive and agreed in comparison with the standard. The diffractive peaks were shown in the planes (100), (002), (100), and (105) for the MoS2 nanoparticles; (002), (100), (103), and (110) for the MoSe2 nanoparticles; and (0002), (0004), (103), as well as (0006) for the MoTe2 nanoparticles. MoSe2 presented the smallest size of the nanoparticles, followed by MoTe2 and, lastly, by MoS2. These results agreed with the results obtained using SEM analysis. For the optical properties of the nanoparticles, UV–Vis and PL were used. The shift of the peaks from the red shift (600 nm) to the blue shift (270–275 nm and 287–289 nm (UV–Vis)) confirmed that the nanoparticles were quantum-confined. The application of the MoX2 NPs in QDSSCs was performed, with MoSe2 presenting the greatest PCE of 7.86%, followed by MoTe2 (6.93%) and, lastly, by MoS2, with the PCE of 6.05%.

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6

Zazpe, Raul, Hanna Sopha, Jhonatan Rodriguez Pereira, and Jan M. Macak. "Electrocatalytic Applications of 2D Molybdenum Dichalcogenides By Atomic Layer Deposition." ECS Meeting Abstracts MA2022-02, no. 31 (2022): 1150. http://dx.doi.org/10.1149/ma2022-02311150mtgabs.

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2D semiconductor transition metal dichalcogenides have attracted considerable attention due to their layered structure, suitable band gap, electrochemically active unsaturated edges and relatively good stability against photocorrosion. These properties result promising for different applications including, Li-ion batteries, photocatalysis and hydrogen evolution reaction (HER). Apart from the widely studied 2D MoS2, 2D selenide and telluride equivalents, MoSe2 and MoTe2, have recently gained considerable interest due to their higher electrical conductivity, wider inter-layer distance and narrower bandgap as compared to MoS2, high surface area and close to zero Gibbs free energy edges for hydrogen adsorption. Unlike sulfide dichalcogenides, the lack of Se and Te precursors have prevented the synthesis of selenide and telluride dichalcogenides by ALD. In order to surpass such impediment, we present a set of novel in-house synthesized Se and Te compounds, which were successfully combined with commercial Mo precursor to synthesize MoSe2 and MoTe2 by ALD [1-5]. The as-deposited ALD MoSe2 and MoTe2 on substrates of different nature were extensively characterized by different techniques, which confirmed the chemical composition and revealed the growth of 2D flaky nano-crystalline MoSe2 and MoTe2. In parallel, MoSe2 and MoTe2@TiO2 nanotube layers (TNTs) heterostructures were fabricated in a simple and fast fashion to explore and exploit the MoSe2 and MoTe2 photo- and electrocatalytic properties. TNTs act as excellent photoactive supporting material providing a high surface area, unique directionality for charge separation, and highly effective charge collection. The presentation will introduce and describe the synthesis of the 2D Mo dichalcogenides, the corresponding physical and electrochemical characterization and encouraging results obtained in HER [4,5], photocatalysis [4-6] and Li-ion batteries [7]. [1] R. Zazpe et al, FlatChem (2020) 21 100166 [2] J. Charvot et al, Chempluschem (2020) 85 576 [3] J. Charvot et al, RSC Adv. (2021) 11 22140 [4] R. Zazpe et al, ACS Appl. Nano Mater. (2021) 3 12 12034 [5] R. Zazpe et al, Appl. Mater. Today (2021) 23 101017 [6] M. Motola et al, Nanoscale (2019) 11 23126 [7] H. Sopha et al FlatChem (2019) 17 100130

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7

Mirabelli, Gioele, Conor McGeough, Michael Schmidt, et al. "Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2." Journal of Applied Physics 120, no. 12 (2016): 125102. http://dx.doi.org/10.1063/1.4963290.

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8

Balaji, Yashwanth, Dan Mocuta, Guido Groeseneken, et al. "Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures." IEEE Journal of the Electron Devices Society 6 (2018): 1048–55. http://dx.doi.org/10.1109/jeds.2018.2815781.

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9

Li, Shangdong, Zhenbei He, Yizhen Ke, et al. "Ultra-sensitive self-powered photodetector based on vertical MoTe2/MoS2 heterostructure." Applied Physics Express 13, no. 1 (2019): 015007. http://dx.doi.org/10.7567/1882-0786/ab5e72.

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10

Pan, Shudi, Pavel Valencia-Acuna, Weijin Kong, et al. "Efficient interlayer electron transfer in a MoTe2/WS2/MoS2 trilayer heterostructure." Applied Physics Letters 118, no. 25 (2021): 253106. http://dx.doi.org/10.1063/5.0047909.

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