Academic literature on the topic 'MOSFETs'
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Journal articles on the topic "MOSFETs"
Funaki, Tsuyoshi, Yuki Nakano, and Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation." Materials Science Forum 717-720 (May 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
Full textYoshioka, Hironori, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, and Hajime Okumura. "Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)." Materials Science Forum 821-823 (June 2015): 745–48. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.745.
Full textAlbrecht, Matthaeus, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs." Materials Science Forum 858 (May 2016): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.821.
Full textChaudhry, Amit, and Nath Roy. "A comparative study of hole and electron inversion layer quantization in MOS structures." Serbian Journal of Electrical Engineering 7, no. 2 (2010): 185–93. http://dx.doi.org/10.2298/sjee1002185c.
Full textLichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen, and John W. Palmour. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Full textChoi, Cheol-Woong, Jae-Hyeon So, Jae-Sub Ko, and Dae-Kyong Kim. "Influence Analysis of SiC MOSFET’s Parasitic Capacitance on DAB Converter Output." Electronics 12, no. 1 (December 30, 2022): 182. http://dx.doi.org/10.3390/electronics12010182.
Full textHuang, W., T. Khan, and T. P. Chow. "Geometry and Short Channel Effects on Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 49–53. http://dx.doi.org/10.1142/s0129156407004230.
Full textAllen, Scott, Vipindas Pala, E. VanBrunt, Brett Hull, Lin Cheng, S. Ryu, Jim Richmond, M. O’Loughlin, Al Burk, and J. Palmour. "Next-Generation Planar SiC MOSFETs from 900 V to 15 kV." Materials Science Forum 821-823 (June 2015): 701–4. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.701.
Full textBradford, T., and S. P. McAlister. "The use of multiple-gated MOSFETs in a simple application." Canadian Journal of Physics 74, S1 (December 1, 1996): 182–85. http://dx.doi.org/10.1139/p96-855.
Full textAhn, Tae Jun, and Yun Seop Yu. "Interface Trap Charge Effects of Monolithic 3D Junctionless Field-Effect Transistors (JLFET) Inverter." Journal of Nanoscience and Nanotechnology 21, no. 8 (August 1, 2021): 4252–57. http://dx.doi.org/10.1166/jnn.2021.19388.
Full textDissertations / Theses on the topic "MOSFETs"
Amberetu, Mathew Atekwana. "Lateral superjunction power MOSFETs." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63012.pdf.
Full textDharmawardana, Kahanawita Gamaethiralalage Padmapani. "High performance power MOSFETs." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621963.
Full textSyme, Richard Travers. "Thermal transport in MOSFETs." Thesis, University of Cambridge, 1989. https://www.repository.cam.ac.uk/handle/1810/283665.
Full textFard, A. M. "Hot electron currents in MOSFETs." Thesis, University of Surrey, 1994. http://epubs.surrey.ac.uk/843618/.
Full textWang, Ping. "Wide band noise in MOSFETs." Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/12345.
Full textChen, Xiangdong. "Bandgap engineering in vertical MOSFETs." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3025006.
Full textIqbal, M. M. H. "On the static performance of lateral high voltage MOSFETs and novel nanoscale accumulation mode MOSFETs." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604944.
Full textLu, Huaxin. "Compact modeling of Double-Gate MOSFETs." Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3237382.
Full textTitle from first page of PDF file (viewed December 8, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 138-143).
Herrmann, Tom. "Simulation und Optimierung neuartiger SOI-MOSFETs." Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-63173.
Full textChen, Chih-Hung. "High-frequency noise modeling of MOSFETs." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/mq24106.pdf.
Full textBooks on the topic "MOSFETs"
Limited, Ferranti Electronics. Mosfets. Chadderton: Ferranti Electronics Ltd, 1987.
Find full textZetex. Mosfets. Chadderton: Zetex, 1992.
Find full text(Firm), Harris Semiconductor. Power MOSFETs: Buffered MOSFETs, intelligent discretes. Melbourne, Florida: Harris Semiconductor, 1994.
Find full textBaliga, Jayant. Silicon RF power MOSFETs. Singapore: World Scientific, 2005.
Find full textSilicon RF power MOSFETS. Singapore: World Scientific, 2005.
Find full textGimenez, Salvador Pinillos. Layout Techniques for MOSFETS. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02031-5.
Full textKorec, Jacek. Low Voltage Power MOSFETs. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9320-5.
Full textAmberetu, Mathew Atekwana. Lateral superjunction power MOSFETs. Ottawa: National Library of Canada, 2001.
Find full textCorporation, Toshiba. Power MOSFETs: SMD, high-voltage. Tokyo: Toshiba Corporation, 1992.
Find full textHaddara, Hisham, ed. Characterization Methods for Submicron MOSFETs. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1355-7.
Full textBook chapters on the topic "MOSFETs"
Iwai, Hiroshi, Simon Min Sze, Yuan Taur, and Hei Wong. "MOSFETs." In Guide to State-of-the-Art Electron Devices, 21–36. Chichester, UK: John Wiley & Sons, Ltd, 2013. http://dx.doi.org/10.1002/9781118517543.ch2.
Full textBhushan, Manjul, and Mark B. Ketchen. "MOSFETs." In Microelectronic Test Structures for CMOS Technology, 139–72. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9377-9_5.
Full textSingh, Ranbir, and B. Jayant Baliga. "Power Mosfets." In Cryogenic Operation of Silicon Power Devices, 65–81. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5751-7_6.
Full textBalestra, Francis, and Gérard Ghibaudo. "SOI MOSFETs." In Device and Circuit Cryogenic Operation for Low Temperature Electronics, 37–67. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4757-3318-1_3.
Full textKhanna, Vinod Kumar. "SOI-MOSFETs." In NanoScience and Technology, 95–107. New Delhi: Springer India, 2016. http://dx.doi.org/10.1007/978-81-322-3625-2_6.
Full textBaliga, B. Jayant. "Power MOSFETs." In Fundamentals of Power Semiconductor Devices, 276–503. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-47314-7_6.
Full textBaliga, B. Jayant. "Power MOSFETs." In Fundamentals of Power Semiconductor Devices, 283–520. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93988-9_6.
Full textSiu, Christopher. "Introduction to MOSFETs." In Electronic Devices, Circuits, and Applications, 65–84. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_5.
Full textKlös, Alexander. "Alternative Nanostruktur-MOSFETs." In Nanoelektronik, 282–307. München: Carl Hanser Verlag GmbH & Co. KG, 2018. http://dx.doi.org/10.3139/9783446456969.010.
Full textGimenez, Salvador Pinillos. "Octo Layout Style (Octagonal Gate Shape) for MOSFET." In Layout Techniques for MOSFETS, 21–29. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-031-02031-5_4.
Full textConference papers on the topic "MOSFETs"
Ye, Hua, and Pradeep Haldar. "Development of Cryogenic Power Modules for Superconducting Hybrid Power Electronic System." In ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-69274.
Full textHatakeyama, Tomoyuki, Kazuyoshi Fushinobu, and Ken Okazaki. "Effect of the Device Structure in Electro-Thermal Analysis of Si CMOS." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73151.
Full textLiu, Yong, Howard Allen, and Stephen Martin. "Power Stack Die Package Design, Simulation and Reliability Analysis." In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-40725.
Full textKearney, Ian, and Hank Sung. "Integrated ESD Robustness through Device Analysis of Ultra-Small Low Voltage Power MOSFETs." In ISTFA 2014. ASM International, 2014. http://dx.doi.org/10.31399/asm.cp.istfa2014p0350.
Full textYining, Liu, Wang Renze, Yang Yapeng, Zhang Jiangang, Wang Ning, Feng Zongyang, Jia Linsheng, and Liang Boning. "The Choice of MOSFET Manufacturing Technique Used in Emergency Response Robot." In 2020 International Conference on Nuclear Engineering collocated with the ASME 2020 Power Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/icone2020-16222.
Full textXu, Dongyan, Yuejun Kang, Dongqing Li, Deyu Li, Manoj Sridhar, Anthony B. Hmelo, and Leonard C. Feldman. "Ultra-Sensitive Fluidic Sensors by Integrating Fluidic Circuits and MOSFETs." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-42518.
Full textTiwari, Ankit, Trevor Davey, and Matthew Willis. "CFD Analysis of Transient Heat Conduction in the Electronic Control Circuitry of Steering Wheel Column Adjustment System." In ASME 2021 Heat Transfer Summer Conference collocated with the ASME 2021 15th International Conference on Energy Sustainability. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/ht2021-63973.
Full textPopov, Dmitry. "TCAD SIMULATION OF SELBOX AND DSOI CMOS SRAM FAILURE." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1608.silicon-2020/227-229.
Full textPetrosyants, Konstantin. "INTRODUCTION INTO TCAD AND SPICE MODELING OF SEMICONDUCTOR DEVICES AND IC COMPONENTS." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1550.silicon-2020/35-40.
Full textNi, Chunjian, Zlatan Aksamija, Jayathi Y. Murthy, and Umberto Ravaioli. "Coupled Electro-Thermal Simulation of MOSFETs." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89182.
Full textReports on the topic "MOSFETs"
Ferry, David K. Transport in Submicron MOSFETS. Fort Belvoir, VA: Defense Technical Information Center, September 1986. http://dx.doi.org/10.21236/ada173156.
Full textWu, Jian, J. Hu, J. H. Zhao, X. Wang, X. Li, and T. Burke. High Mobility 4H-SiC Trenched Gate MOSFETs. Fort Belvoir, VA: Defense Technical Information Center, August 2006. http://dx.doi.org/10.21236/ada507271.
Full textMatocha, Kevin. High-Current SiC MOSFETs for Automotive Applications (non-proprietary). Office of Scientific and Technical Information (OSTI), January 2018. http://dx.doi.org/10.2172/1416749.
Full textWilson, Charles L., and James L. Blue. MOS1 a program for two-dimensional analysis of Si MOSFETs. Gaithersburg, MD: National Bureau of Standards, 1985. http://dx.doi.org/10.6028/nbs.sp.400-77.
Full textOfford, Bruce, C. Milligan, H. Jazo, and J. Meloling. An Ultra Low Power 180-Degree, 1-Bit Phase Shifter using MOSFETS. Fort Belvoir, VA: Defense Technical Information Center, September 2009. http://dx.doi.org/10.21236/ada513799.
Full textHall, Douglas C., Gregory L. Snider, and Bruce A. Bunker. III-V Compound Semiconductor Native Oxide Mosfets With Focus on Interface Studies. Fort Belvoir, VA: Defense Technical Information Center, July 2001. http://dx.doi.org/10.21236/ada388295.
Full textPeršun, Marijan. Scaling of the Silicon-on-Insulator Si and Si1-xGex p-MOSFETs. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.6810.
Full textGampa, Ravi. High Voltage Multiplier: A New, Compact Design using SiC High Frequency MOSFETs. Office of Scientific and Technical Information (OSTI), October 2021. http://dx.doi.org/10.2172/1863893.
Full textCooper, James A., and Jr. Development of SiC Power MOSFETs with Low On-Resistance for Military and Commercial Applications. Fort Belvoir, VA: Defense Technical Information Center, March 2003. http://dx.doi.org/10.21236/ada414680.
Full textCook, E. Improving Switching Performance of Power MOSFETs Used in High Rep-Rate, Short Pulse, High-Power Pulsers. Office of Scientific and Technical Information (OSTI), September 2006. http://dx.doi.org/10.2172/896001.
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