Dissertations / Theses on the topic 'Mosdot M'

Le présent travail trouve son origine dans la mise en place théorique et expérimentale des études de modulation externe de la lumière d'un faisceau laser par des matériaux électrooptiques (montage Senarmont), visant à contribuer au développement des communications optiques. Un faisceau laser modulé en phase est transporté à une certaine distance au bout de laquelle cette modulation est transformée en modulation d'amplitude du faisceau lumineux. Il importait donc de concevoir, de réaliser et de tester un ensemble électronique permettant de saisir l'information ainsi transmise, mais sous une forme immédiatement exploitable dans des systèmes digitaux. Le moyen imaginé consiste à transformer la porteuse et la modulation d'intensité lumineuse en une fréquence électronique (convertisseur intensité fréquence : CIF), mais en ayant le souci non seulement de ne pas augmenter le bruit, mais au contraire de le diminuer. De par sa conception, notre système est immédiatement utilisable comme entrée d'un microprocesseur pouvant faire partie d'un ensemble plus complexe. En résume, on peut dire que dans le présent travail nous avons examiné le procédé de photodétection associée à l'intégration optoélectronique, accompagnée par la réalisation de trois systèmes qui la mettent en pratique. Les principes théoriques sont confirmés par les résultats obtenus concernant la linéarité, la région dynamique, les caractéristiques du bruit et l'amélioration du rapport SNR. Il faut ajouter qu'on peut réussir une amélioration plus importante du rapport SNR en développant le procédé de traitement de fréquence vers des systèmes du type PLL. L'avantage de la PLL comme détecteur de fréquence, réside dans le fait que le seuil de détection (démodulation) baisse d'environ 3 Db. Une autre possibilité pour la détection de fréquence, est la connexion du CIF à un micro-ordinateur ou micro-processeur assurant la commande des caractéristiques du système. Les applications possibles d'un CIF concernent en général les systèmes dans lesquels le bruit aux basses fréquences est élevé, ou dans lesquels la puissance incidente du signal optique est très petite, ou quand l'intérêt réside sur l'intégration des pulsations optiques, ou enfin dans le cas de production de composants électroniques actifs<br>The present work originates in the experimental and theorical study of the external modulation of a laser beam by electrooptical materials, in the Senarmont arrangement ; the aim is to contribute to the development of the optical telecommunications. A phase modulated laser beam is transported at a certain distance where it is transformed into an amplitude modulation. It is thus necessary to conceive, to realise and to test an electronic device able to detect the transmitted information, but in a form immediately useful in digital systems. The device imagined transforms the amplitude modulation of the light beam into an electronic frequency (Converter of Intensity to Frequency :CIF), with the care not only to avoid any increase of noise but in the contrary to decrease it. By its basic conception, the device is able to be connected directly to a microprocessor, part of a more complex system. Our work presents the association of the photodetection to the optoelectronic integration, accompanied by three realisations; The theoretical principles have been confirmed by the experimental results relative to linearity, dynamical range, noise characteristics and the improvsement of the SNR. The advantage of the PLL type as detector was emphasised. The possible applications of a CIF concern in general systems in which the noise is high in low frequencies, in systems in which the optical signal incident power is very weak, when the interest is focused on the integration of the optical pulses, or finally in the case of the production of active electronic devices

Bien que spécifiques, les environnements radiatifs sont variés et représentent des investissements considérables. L'électronique, et en particulier la technologie MOS, est sensible aux radiations. Quoi que non dédiés aux environnements hostiles, les composants COTS, sont de plus en plus utilisés afin de réduire les coûts. Afin d'obtenir l'assurance de leur tenue à la dose, des tests sont nécessaires mais ajoutent un coût non négligeable. L'étude est consacrée à l'amélioration de la caractérisation et de l'utilisation des MOSFETs en environnement radiatif. Les méthodes de caractérisations thermiques permettent de déterminer la dynamique de dépiégeage des charges et conduisent aux niveaux énergétiques des pièges. L'étude théorique montre qu'un raisonnement sur une énergie d'activation moyenne conduisait à sous estimer celle-ci ainsi que le facteur de fréquence. Une simulation basée sur plusieurs énergies d'activation proches permet un meilleur ajustement avec les résultats expérimentaux. Différents traitements tels que l'implantation ionique, le stress électrique et même une pré-irradiation, ont été testés pour améliorer la tenue des composants COTS à la dose. La technique de pré-irradiation consiste à modifier certains paramètres électriques par irradiation ou stress électrique et impose une adaptation du système. La méthode du stress électrique utilise la forte création d'états d'interface qui intervient au bout d'une certaine durée de stress. Celle-ci entraîne une augmentation de la tension de seuil et permet de retarder la perte de fonctionnalité du composant lors de l'irradiation. Les équivalences observées entre les effets d'un stress électrique positif et ceux d'une irradiation ont conduit à la mise au point d'une méthode de sélection par stress électrique des composants pour l'environnement radiatif. Le stress électrique permet une réduction des coûts, un gain de temps et améliore la caractérisation d'un lot en mettant en évidence les problèmes de dispersion.

Sous l'impulsion des innovations technologiques récentes, la réduction des dimensions des composants électroniques a entrainé une modification importante de leur comportement électrique et une plus grande sensibilité aux agressions extérieures. Il est donc toujours d'actualité d'analyser les processus électroniques impliques dans ces nouvelles structures. Dans ce but, nous présentons dans ce travail une étude réalisée sur des transistors nLDDMOSFETs issus de la technologie 1,2 um de matra-mhs, et s'articulant sur deux grands axes principaux: * le premier fait appel à une étude expérimentale, basée d'une part sur l'évolution des paramètres de conduction du transistor, et d'autre part sur la modification des paramètres caractéristiques de la jonction drain-substrat du transistor. Une étude complémentaire de capacités MOS est effectuée en vue d'accéder à d'autres paramètres technologiques. Une méthodologie de caractérisation cohérente du transistor et de ses éléments a été développée. La détérioration des propriétés de la jonction drain-substrat vers le domaine submicronique a été analysée et reliée à la réduction des dimensions. L'effet de la réduction des dimensions sur la tension de seuil a été mis en évidence. * le deuxième est une simulation 2D de ces dispositifs, réalisée sur deux niveaux: une simulation du procédé de fabrication à l'aide du simulateur de process (bidimensionnel) ATHENA. Elle s'appuie essentiellement sur l'ajustement des profils de dopage fournis par le constructeur, par le choix approprie des paramètres process (énergie et dose d'implantation, condition de recuit, etc. ). Une simulation du comportement électrique statique de ces dispositifs à l'aide du simulateur de devices S PISCES 2B, s'appuyant principalement sur le choix des modèles physiques traduisant au mieux les phénomènes à prendre en compte dans ce type de dispositifs. Nos outils de simulation sont distribués par Silvaco international. Finalement, ce travail met au point une méthode de caractérisation cohérente des effets dus aussi bien à la réduction des dimensions, qu'à ceux lies a la dégradation du comportement électrique de ces dispositifs, suite à une irradiation. Il met en place une méthodologie de simulation qui a permis de montrer le rôle de la double implantation du canal (B et As) pour l'ajustement de la tension de seuil, l'influence de l'épaisseur du substrat ainsi que les effets de réduction technologique du canal sur les caractéristiques électriques. Ce travail montre que les irradiations ionisantes et les effets de déplacement peuvent être caractérisés par l'étude de la jonction drain-substrat. Il montre également que la dose influence les processus de conduction dans cette jonction au meme titre qu'une polarisation sur la grille<br>The reduction of electronics devices dimensions, produces a strong modification of their electrical characteristics and a high sensitivity to external agressions. In this work we present a study of lightly doped drain (LDD) nLDDMOSFET's of matra-mhs 1. 2 um technology. This work contains two major parts : *the first part concerns an experimental study, based on conduction parameter evolution, and on the modification of the transistor body-drain junction parameters. A complementary study of MOS capacitors has been carried out in order to determine more technological parameters. A coherent characterization method of MOS transistor and their elements has been expanded. Properties degradation of body-drain junction in submicronic range have been analysed and related to dimensions reduction. * The second part presents a two-dimensional simulation of these divices, using two level simulation : a simulation with the 2D simulator ATHENA which provides a two-dimensional simulation of semiconductors processing. This simulation step requires a good choice of process parameters (ion implantation dose, energy, annealing condition. . . ) A two-dimensional electrical behavior simulation with the simulator S PISCES 2B, based on the choice of physical models taken into account for these devices. Finally, this work presents a coherent characterization method of dimensions reductions effects and of electrical behavior degradation of these devices after radiation exposure. It gives a simulation methodology which made it possible to show the role of the double channel implantation (B and As) for the threshold voltage adjustement and substrate thichness influence. This work shows that the ionizing radiation and displacement damage can be characterized by the body-drain junction study. Gate bias and ionizing radiation have the same effects on conduction processes in this junction

Desde os anos 80 a evolução dos processos de fabricação de circuitos integrados MOS tem buscado a redução da tensão de alimentação, como forma de se reduzir o consumo de energia dos circuitos. Partiu-se dos antigos 5 V, padrão estabelecido pela lógica TTL nos anos 70, até os circuitos modernos que operam com alimentação pouco abaixo de 1 V. Entretanto, desde os primeiros anos da década de 2000, a tensão de alimentação está estabilizada neste patamar, devido a limitações tecnológicas que tem se mostrado difíceis de serem transpostas. Tal desafio tem sido estudado por grupos de pesquisa ao redor do mundo, e diversas estratégias tem sido propostas para se chegar a circuitos analógicos e digitais que operem sob tensão de alimentação bem inferior a 1 V. De fato estes grupos têm focado seus estudos em circuitos que operam com tensão de alimentação inferior a 0,5 V, alguns chegando à casa de 200 ou 100 mV, ou até menor. Dentre as diversas classes de circuitos, os conversores de dados dos tipos digital-analógico (DAC) e analógicodigital (ADC) são circuitos fundamentais ao processo de integração entre os módulos que processam sinais analogicamente e os que processam sinais digitalmente, sendo assim essenciais à implementação dos complexos SoCs (System-on-Chips) da atualidade. Este trabalho apresenta um estudo sobre o desempenho da configuração MOSFET em rede M-2M (similar à rede R-2R que emprega resistores), utilizada como circuito conversor digital-analógico, quando dimensionada para operar sob tensão de alimentação muito baixa, da ordem de 200 mV ou inferior. Tal estudo se baseia no emprego de um modelo para os MOSFETs que é contínuo desde a condição de inversão fraca (subthreshold) até a inversão forte, e inclui o uso de um modelo de descasamento entre MOSFETs que é válido para qualquer condição de operação. Com base neste estudo foi desenvolvida uma metodologia de projeto, capaz de estabelecer as relações de compromisso entre “tensão de alimentação”, “resolução efetiva” e “área ocupada em silício”, fundamentais para se atingir um circuito otimizado. Resultados de simulação elétrica são apresentados e confrontados com os resultados analíticos, visando a comprovação da metodologia. O circuito já foi enviado para fabricação, e deve começar a ser testado em breve.

Les innovations technologiques récentes ont permis le développement de transistor MOS de faibles dimensions, ayant des longueurs de canal et des largeurs de grille inférieures au micromètre. Cela permet de réaliser des circuits à forte densité d'intégration pour des applications à l'électronique. Cependant, la réduction des dimensions fait apparaître toute une gamme d'effets parasites et modifie ainsi les mécanismes de conduction avec l'apparition de nouveaux phénomènes ou des phénomènes qui n'étaient pas dominants dans des structures plus larges. Ceci entraîne un changement du fonctionnement du transistor ainsi que de leurs paramètres électriques. La réduction des dimensions, et en particulier de la longueur de grille des transistors MOS donne naissance à un problème de fiabilité qui était inconnu lors de l'utilisation de transistors à canal long. Les phénomènes de dégradation provenant des forts champs électriques deviennent importants avec la réduction des dimensions engendrant des défauts notamment aux interfaces oxyde-semiconducteur (SiO2-Si) ainsi que dans l'oxyde de grille, ce qui provoquent un vieillissement plus rapide de ces composants. Nous présentons dans ce contexte, une étude réalisée sur des transistors nLDD-MOSFETs submicroniques issus de technologie 0,6[masse volumique]m de MATRA-MHS-TEMIC, s'appuyant sur quatre objectifs principaux : détermination des paramètres de conduction, analyse des caractéristiques I-V sur la jonction drain-substrat, étude du comportement du transistor bipolaire dans les transistors MOS (source = collecteur, substrat = base, drain = émetteur) et étude du comportement des transistors MOS suite à une irradiation ionisante Co-60, afin d'évaluer leur dégradation

L'étude des effets des rayonnements sur les dispositifs électroniques passe généralement par une étude des structures MOS (capacités ou transistors) en raison de leurs usages multiples. Dans ce travail, nous présentons une étude avant et après irradiation neutrons de structures MOS technologie CCD de THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES. Elle consiste en l'analyse de l'évolution des paramètres caractéristiques des composants sous l'effet de l'irradiation. Le travail a été ainsi articulé sur deux axes principaux : Le premier consistait en l'étude avant irradiation des shuctures. Cette étude a été menée sur des capacités PMOS et des transistors NMOSFETs en utilisant simultanément des mesures de la capacité en fonction de la tension et en fonction du temps ainsi que l'analyse par spectroscopie DLTS. Elle a permis de déterminer différents paramètres caractéristiques des structures, principalement les origines du courant d'obscurité créé dans les structures et d'étudier les effets du dopage et de l'épaisseur d'oxyde des structures. Une nouvelle méthode basée principalement sur la spectroscopie DLTS qui détermine les paramètres de génération des porteurs minoritaires a été développée. Le deuxième consistait en l'étude des structures après irradiation. L'effet de la fluence des particules a été considéré. La dégradation augmente généralement avec la fluence. Les défauts créés dans le semi-conducteur ont été détectés en utilisant les spectroscopies DLTS et OLDTS. Leurs signatures (énergie, section efficace de capture et densité) ont été calculées. L'évolution des paramètres de génération des porteursminoritaires a été aussi considérée en relation avec le type de structures (capacité ou transistor) ou bien l'épaisseur d'oxyde<br>The study of radiation effects on electronic devices is generally concened with thestudy of MOS structures (capacitors or transistors) due to their widespread use. In this work, a study before and after neutron irradiation of MOS structures, N-MOS process manufactured by THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES, is presented. It consists in the analysis of the structures parameters changes due tu radiation. The work was thus articulated along two principal axis : The first one is devoted to the before preradiation study. This study was undertaken on PMOS capacitors and NMOSFETs transistors by simultaneously using measurements of the capacitance according to bias and to tinie. DLTS spectroscopy analysis is performed. Various characteristic parameters of the structures are determined, mainly the origins of the dark current. The effects of doping and oxide thickness are studied. A new method based mainly on the DLTS spectroscopy to determine the parameters of generation of the minority carriers is presented. The second axis consists in the study, postradiation, of the structures. The effect of the neutron fluence was considered. The degradation of parameters increases with fluence. The defects created in the semiconductor were detected by using DLTS and OLDTS spectroscopies. Their signatures (activation energy, capture cross section and density of the defects) were calculated. The evolution of the minority carrier generation parameters was also considered taking into account the introduced variations when the type of structures (capacity or transistor) or the oxide thickness change

Le MCT (MOS Controlled Thyristor) et l'IGBT (Insulated Gate Bipolar Transistor) sont des composants hybrides associant les avantages d'un MOS (facilité de commande et rapidité en commutation) et ceux d'une structure bipolaire (faible tension de déchet et un pouvoir de commuter de forts courants). Ils se trouvent en compétition dans les applications de puissance. Ces applications couvrent les domaines industriels dans des environnements radiatifs (spatiaux ou nucléaires), ce qui demande une caractérisation spécifique. Deux types d'effets des irradiations sur les composants électroniques sont à considérer : l'effet d'ionisation et l'effet de déplacement d'atomes. Le travail développé dans ce mémoire a pour but de pousser l'étude et l'analyse des effets induits par des irradiations ionisantes (gamma) et à effets de déplacement (neutrons) dans le composant MCT. Afin de bien comprendre les dégradations induites dans la structure du MCT une pre-étude sur l'IGBT est réalisée. Des mesures électriques et la simulation 2D sont effectuées afin d'évaluer ces dégradations. Ainsi l'évolution des paramètres physiques et électriques a été suivie en fonction de la dose (ou fluence) et du type d'irradiation. Une modélisation de la structure du MCT et des phénomènes physiques et électriques gouvernant son comportement électrique en utilisant le simulateur de dispositifs 2D-ATLAS (version PISCES de SILVACO) est réalisée. Cette structure va servir à la simulation et l'analyse des mesures capacité-tension entre grille et anode du MCT, ceci afin de bien montrer le rôle joué par chacune des couches du MCT. La simulation des effets induits par irradiation neutrons est effectuée en introduisant des défauts dans toute la structure simulée. L'objectif de cette simulation étant de valider les hypothèses proposées lors des études électriques

Ce mémoire traite de la simulation et de la conception du transistor VDMOS de puissance. On propose un outil de conception de modèles pour ce transistor, qui est base d'une part sur l'analyse des mécanismes dont la structure est le siège, d'autre part sur la géométrie (layout) et la technologie, et enfin sur la prise en compte de la topologie d'un schéma équivalent établi antérieurement au laboratoire. Plus précisément, on effectue tout d'abord une étude des mécanismes-conduction, tenue en tension, étude dynamique-intervenant dans les diverses zones de la structure du composant. En se basant sur les aspects de modélisation antérieurement développes au LAAS, nous proposons ensuite une nouvelle méthodologie de conception des modèles VDMOS. Celle-ci prend en compte les équations de fonctionnement, le dessin des masques, la technologie et les lois de dépendance entre les paramètres. Pour ce faire, nous développons un logiciel nomme power mosfet's designer qui permet à partir des données de la physique, de la géométrie et de la technologie de la structure, de générer le modèle VDMOS et de connaitre les performances électriques du dispositif dans une application de circuit spécifiée a priori. On procède ensuite à la validation de ce logiciel sur des composants industriels. On l'applique à l'étude de nouvelles générations de structures VDMOS telles que le transistor VDMOS à double niveau d'oxyde de grille intercellulaire. Un exemple d'analyse spéculative du transistor VDMOS élaboré sur un autre matériau que le silicium est enfin proposé : on étudie le cas où le substrat est en carbure de silicium (sic)

Made available in DSpace on 2014-12-17T14:47:05Z (GMT). No. of bitstreams: 1 LucidioCO_DISSERT.pdf: 1370942 bytes, checksum: 94a01f2ae86c5e51c81797c10c09ca12 (MD5) Previous issue date: 2014-03-21<br>This study aims to identify the concepts of professional nursing team on assistance in urgency and psychiatric emergencies in SAMU in Mossor?/RN, identifying the difficulties in implementing an emergency assistance to the user in psychiatric distress in this service and point strategies in pursuit of consolidation and expansion of comprehensive health care to the public. It is a descriptive research with qualitative and exploratory approach. The subjects were employees of the nursing staff of SAMU of that mentioned municipality. Semi-structured interviews are applied as tool for data collection. It was counted on the consent of the institution where the study was developed and approval by the Ethics Committee in Research of UFRN with CAAE No 17326513.0.0000.5537, besides signing the Informed Free Consent Term by the participants. Data analysis was done by means of thematic analysis proposed by Bardin. Thus , as a result of the research produced the following categories: mechanistic practice; dehumanization of care; need for qualification, barriers to assistance in urgency and psychiatric emergency and strategies in pursuit of comprehensive care, which proceeded in preparing two articles entitled "Nursing care to the emergency room and psychiatric emergencies in the mobile emergency care service" and "Barriers for emergency service and psychiatric emergencies in the mobile emergency care service". In the studied reality it was identified that nursing care offered to users in situations of urgency and psychiatric emergency is made based primarily on the use of chemical and physical restraints, as well as transportation to the general hospital, constantly using the police force support, which meets the guidelines of the Psychiatric Reform and thereby undermining the provision of an effective and humane care. This scenario is worsened by the lack of an organized network of services in mental health, where after the service the user is taken to a general hospital, considering that there is no ready or appropriate psychiatric emergency service as a Center of Psychosocial Care - CAPs III to reference it, thereby precluding the realization of a resolute and comprehensive care. Thus, it is concluded that nursing care is based on biologicist and medicine-centered model advocated by classical psychiatry, and that despite all the advances in psychiatric reform, still guides the mental health care, so the lack of service network organized in hierarchical and mental health, where the user in urgency and emergency service can be watched in full and the guidelines of the psychiatric reform can be realized in practice<br>O presente estudo tem como objetivo conhecer as concep??es dos profissionais da equipe de enfermagem sobre a assist?ncia em urg?ncias e emerg?ncias psiqui?tricas no Servi?o de Atendimento M?vel de Urg?ncia (SAMU) em Mossor?/RN, identificar as dificuldades existentes na implementa??o de uma assist?ncia de emerg?ncia ao usu?rio em sofrimento psiqui?trico neste servi?o e apontar as estrat?gias na busca de uma consolida??o e amplia??o de uma assist?ncia integral a esse p?blico. Trata-se de pesquisa do tipo descritiva com abordagem qualitativa e de car?ter explorat?rio. Os sujeitos foram trabalhadores da equipe de enfermagem do SAMU do referido munic?pio. Emprega-se a entrevista semiestruturada como instrumento de coleta de dados. Contou com a anu?ncia da institui??o onde se desenvolveu o estudo e a aprova??o pelo Comit? de ?tica em Pesquisa da UFRN, com CAAE n? 17326513.0.0000.5537, al?m da assinatura do Termo de Consentimento Livre e Esclarecido pelos participantes. A an?lise de dados se fez por meio da An?lise Tem?tica proposta por Bardin. Desta forma, como resultado da pesquisa elaborou-se as seguintes categorias: pr?tica mecanicista; desumaniza??o da assist?ncia; necessidade de qualifica??o, entraves para uma assist?ncia em urg?ncia e emerg?ncia psiqui?trica e estrat?gias na busca da assist?ncia integral, o que procedeu na elabora??o de dois artigos intitulados Assist?ncia de enfermagem ?s urg?ncias e emerg?ncias psiqui?tricas no servi?o de atendimento m?vel de urg?ncia e Entraves para o atendimento ?s urg?ncias e emerg?ncias psiqui?tricas no servi?o de atendimento m?vel de urg?ncia . Na realidade estudada identificou-se que a assist?ncia de enfermagem ofertada aos usu?rios em situa??o de urg?ncia e Emerg?ncia psiqui?trica ? realizada baseada principalmente na utiliza??o de conten??es qu?micas e f?sicas, assim como no transporte para o hospital geral, constantemente utilizando o acionamento de for?a policial, o que vai de encontro as diretrizes da Reforma Psiqui?trica e assim comprometendo a oferta de uma assist?ncia efetiva e humanizada. Esse cen?rio agrava-se pela falta de um rede de servi?os em sa?de mental organizada, onde ap?s o atendimento o usu?rio ? levado a um hospital geral, tendo em vista que n?o existe um pronto socorro psiqui?trico ou servi?o apropriado, como um Centro de Atendimento Psicossocial CAPs III para referenci?-lo, impossibilitando assim a realiza??o de um atendimento resolutivo e integral. Dessa forma, conclui-se que a assist?ncia de enfermagem baseia-se no modelo biologicista e medicaloc?ntrico, defendido pela psiquiatria cl?ssica e que apesar de todos os avan?os da reforma psiqui?trica, ainda norteia a assist?ncia em sa?de mental, assim a falta de rede de atendimento em sa?de mental organizada e hierarquizada, onde o usu?rio em situa??o de urg?ncia e emerg?ncia psiqui?trica possa ser assistido de forma integral e as diretrizes da Reforma Psiqui?trica possam ser concretizadas na pr?tica

The Mosuo people, also known as Na, are one of the many ethnic groups in China officially recognized by the Government as a branch of Naxi, although they regard themselves as historically and culturally different from them (Gladney 1994; Harrel 2001). The cultural centers of the Mosuo people, covering an area of six hundred and forty two square kilometers, are situated in the Yongning plateau and the touristic site of Lugu lake, which is in the northern extremity of Ninglang, on the borders of Yunnan and Sichuan provinces in Southwestern China. Even though there is variety in matrimonial practices and familial configurations according to the different places where the Mosuo people are settled, they are best known for their matrilineal system (often referred as matriarchal) and for the practice of the so-called visiting relationship (zouhun 走婚 “walking marriage” in Chinese and tisese “to go back and forth” in Naru language). In brief, tisese had been the preferred sexual relation modality among the Yongning Mosuo until the end of the Sixties as an alternative to marriage: it does not involve cohabitation, since the man visits the woman during the night and at daybreak he returns to his maternal household. The only prerequisite for starting a tisese relationship is the mutual agreement between partners; no ceremony or exchange of services is required (Shih 2010). The relationship between partners does not create ties between them, nor between the respective relatives, even if nowadays fathers care about children’s needs and education (Mathieu 2003; Shih 2010). The traditional basic social unit is set up by a group of men and women related to the female line, usually up to three generations who all live together inside the maternal house. Since there is not husband-wife relationship, the fundamental tie is between brother and sister: they live together and share out the work to maintain the household. This work take into consideration the changing environments of Mosuo matrilineal society with a focus on two small communities, one driven by subsistent farming, the other based on tourism services and income. Following this perspective, the author tried to look at families and kinship-based groups and their local word-views.

This work analyzes tuning capabilities of different fully integrated active filter topologies. Work only deals with continuous time active filters. Topologies described in this work differ in type of active element and in method of frequency tuning. Techniques of tunning are proved on second order low pass filter. Filter topologies are compared from tunning capabilities and from point of total harmonic distortion. The main building block of all filters is integrator.

O presente trabalho teve como objetivo avaliar o perfil de metabolização de açúcares por linhagens de S. cerevisiae amplamente utilizadas no setor sucroalcoleiro (CAT-1 e BG-1) e uma linhagem geneticamente modificada (HCJ 003) com o propósito de sobreexpressar invertase intracelular e ainda contém transportadores de sacarose de alta afinidade. Para tal estudo foi realizado 1 ensaio de fermentação simulando as condições industriais de produção de etanol com reciclos de células e mosto misto constituído de melaço e caldo de cana (50% de cada fonte) a 19% de ART. O ensaio de fermentação foi constituído por 4 ciclos sendo os 3 primeiros ciclos destinados a avaliação das cepas CAT -1 e HCJ 003 a qual é diplóide e sobre-expressa somente a invertase intracelular quanto aos diversos parâmetros do processo de fermentação. O 4° ciclo fermentativo foi destinado ao estudo do perfil de metabolização dos açúcares, onde analisou-se os teores de sacarose, glicose e frutose, bem como a formação de glicerol e o teor de trealose na biomassa das linhagens CAT -1, HCJ 003 e BG-1 (ambas com atividades de invertase distintas). No estudo comparativo dos parâmetros fermentativos a cepa HCJ 003 produziu de forma consistente, menos biomassa e mais etanol do que a cepa CAT-1. O rendimento fermentativo em etanol foi maior para a cepa HCJ 003. O fato de transportar a sacarose para o interior da célula faz com que seja gerado apenas 3 moles de ATP (em vez de 4 ATP). Portanto, para repor o ATP que deixa de ser gerado, há um maior direcionamento do metabolismo para as vias fermentativas e conseqüentemente mais etanol é produzido aumentando-se o rendimento da fermentação. No estudo do perfil de metabolização dos açúcares para as cepas CAT -1, HCJ 003 e BG-1 mostrou que a cepa BG -1 hidrolisou mais rapidamente a sacarose devido à alta atividade de invertase e também apresentou quantidades superiores de glicerol em resposta ao aumento da pressão osmótica do meio de fermentação. Já a CAT -1 apresentou maiores níveis de trealose o que pode ser um indicativo da sua maior dominância durante o processo industrial brasileiro. Assim este trabalho resultou no perfil de metabolização de cepas com diferente atividade de invertase e mostrou que a cepa HCJ 003 embora seja uma derivada de uma linhagem laboratorial manteve-se adaptada às condições do processo obtendo-se rendimento superior à CAT-1.<br>The aim of tis work was to evaluate the metabolic profile of sugars using Saccharomyces cerevisiae strains widely used in industry of sugars and ethanol (CAT-1 e BG-1) and a genetically modified strain in purpose to over-express intracellular invertase and also contains sucrose transporters with high afinity. For this study, 1 test were performed simulating industrial fermentation for ethanol production using cell recycle and mixed must with molasses and sugar cane (50% of each compound) for 19% TRS. The fermentation experiment were composed of 4 recycles and in first 3 cycles were intended for the evaluation of the strains CAT-1 and HCJ 003 wich is diploid and overexpres just the intracellular invertase on the various parameters of the fermentation process. The 4th recycle was designed to study the profile of metabolism of sugars, where were analysed the levels of sucrose, glucose and frutose, as well as the formation of glycerol and trehalose content in biomass of the strains CAT -1, HCJ 003 and BG -1 (all of them with different invertase activity). In the evaluation of the strains on the various parameters of the fermentation process, the strain HCJ 003 produced consistently less biomass and more ethanol than CAT-1. The yield of ethanol fermentation was higher for the strain HCJ 003. The fact that this strain transport sucrose into the cells makes it generated only 3 moles of ATP (instead 4 ATP). So to restore the ATP that is no generated, there is an increase targeting of the metabolism to fermentative pathways and therefore more ethanol is produced increasing the efficiency of fermentation. In the profile of metabolism of sugars to the strains CAT -1 HCJ 003 and BG-1 showed that the strain BG -1 hydrolyzed more rapidly the sucrose due to high invertase activity and also showed higher amounts of glycerol in response to increased osmotic pressure of the fermentation medium. Already CAT -1 showed higher levels of trehalose, which may be indicative of its most dominant during the Brazilian industry. So this work resulted in the profile of metabolism of different strains with invertase activity and showed that strain 003 Hcj although a derivative of a laboratory strain remained adapted to the conditions of the process resulting in higher yield to CAT-1.

碩士<br>淡江大學<br>數學學系<br>89<br>Abstract : A graph is to be a complete graph Kn if the graph has n points and there is an edge joining any two points. A complete n-partite graph is a graph with n partite sets,m1,m2,….,mn points, respectively. There is an edge joining any two points which belong to different parts, and no edge connected any two points in the same part. If each part has the same number of points, say m, can be denoted by Kn(m). λKn(m) is a λ-fold complete n-partite graph, each part has m points. A packing of G with triangles is an ordered triple (S,H,L),where S is the vertex set of G. H is a collection of edge-disjoint triangles of G and L is the set of edges in G which do not belong to any triangle of H. The set of edges in L is called the leave of the packing H of G. If the number of elements in H is as large as possible, or equivalently the number of elements in L is as small as possible then the packing of G with triangles is said to be maximum, and L is a minimum leave. In this thesis, we obtain the maximum packing and the minimum leave of lKn with triangles for λ,n are integers and λ>1, n>2. By using the results of the maximum packing of lKn with triangles, we try to decompose λKn(m) into most cycles.

With this pedagogical case study, the company ESL Gaming, which is one of the few companies that have recognized the potential of the nowadays thriving eSports sector at early stage, is examined. Aiming to become the world’s most powerful eSports brand, the enterprise focuses on extending their strong market position and withstand growing pressure of competition. This goal is intended to be reached with an improvement in brand management and the creation of customer engagement that decides on sustainable customer relationships. Herewith, a sustainable competitive advantage shall be created, directing at the goal to increase attractiveness for brand investors and gamers. In order to gain comprehensive understanding of the industry, quantitative and qualitative analyses are applied, covering the eSports market and business performance of ESL Gaming. Subsequently, critical success factors are analysed and recommendations for a customer engagement strategy along the AER model (Acquisition-Expansion-Retention) are developed. Based on the results, business implications are presented. The case resolution displays the current alteration in the market. It is moving from a merchant-determined to a consumer-oriented market. eSports consumers demand an active role in brand-customer-relationships. Thus, ESL Gaming should focus on implementing a CRM (Customer Relationship Management) solution that helps providing one-on-one offerings through digital, but also offline channels on the basis of individual customer journeys. Therewith, personalized and high-quality contents, improved streaming offers, merchandise, ticketing and on-site offerings, as well as mobile options along the identified relationship journey, promise long-term relationships. In effect, purchase intentions, cost-effectiveness and co-creation, leading to a sustainable competitive advantage, are enhanced.<br>Neste estudo de caso pedagógico é examinada a empresa ESL Gaming, que é uma das poucas empresas a receber o próspero setor na atualidade de eSports. Com o objetivo de se tornar a marca de eSports mais poderosa do mundo, a empresa concentra-se em ampliar sua forte posição no mercado e suportar a crescente pressão da concorrência. Esse objetivo deve ser alcançado com uma melhoria na gestão da marca e a criação do compromisso, possibilitando o relacionamentos sustentáveis com o mesmo. Com esta estratégia deve ser criada uma vantagem competitiva sustentável e direcionada para o aumento da atratividade para os investidores e jogadores da marca. Neste estudo são aplicadas análises quantitativas e qualitativas para obter uma compreensão abrangente do setor, cobrindo o mercado de eSports e o desempenho comercial da ESL Gaming. Posteriormente, fatores críticos de sucesso são analisados e recomendações para uma estratégia de compromisso com o cliente ao longo do modelo AER (Aquisição- Expansão-Retenção). Com base nos resultados são apresentadas implicações para a gestão. A resolução do caso mostra a alteração atual no mercado, o qual está a passar dum mercado determinado pela empresa para um mercado orientado ao consumidor. Os consumidores de eSports exigem um papel ativo nos relacionamentos marca-cliente. Assim, a ESL Gaming deve focar-se na implementação de uma solução de CRM (gestão do relacionamento com o cliente) que ajude a fornecer ofertas individuais por meio de canais digitais, mas também offline, com base nas jornadas individuais dos clientes. Assim, conteúdo personalizado e de qualidade elevada, ofertas aprimoradas de streaming, mercadorias, emissão de bilhetes e ofertas no local, além de opções móveis ao longo da jornada de relacionamento identificada, prometem relacionamentos de longo prazo. Com efeito, as intenções de compra, a relação custo-benefício e a co-criação são aprimoradas levando a uma vantagem competitiva sustentável.

In recent years, there has been a growth of Corporate Social Responsibility practises due to the increase of consumers’ expectations on environmental topics. Even though there is the demand of the market for products derived from companies that share the same values as its consumers, are there any evidences that prove that the connection between an organization’s strategic practises will directly lead to a performance improvement? Following the gap within the literature on exploring this theme, starting from a sample of 100 companies gathered from the Fortune 500, this dissertation intends to establish the correlation between Corporate Governance and Corporate Social Responsibility with firms’ financial performance. After collecting and analysing the data within a 5 years range, it has been proven that there is a positive connection between the two concepts and the organizations’ financial performance in this sample, when measured by one of the metrics. Within the concept of CSR, the Environmental components have proven a higher impact on the overall concept. And, additionally, Corporate Governance has demonstrated to be positively dependent on Corporate Social Responsibility.<br>Nos últimos anos, tem sido detetado um crescimento das práticas de Responsabilidade Social Corporativa devido ao aumento das expectativas dos consumidores sobre temas ambientais. Embora exista a procura do mercado por produtos derivados de empresas que partilhem os mesmos valores que os seus consumidores, será que existem evidências que comprovem a conexão entre as práticas estratégicas de uma organização e a melhoria direta do seu desempenho? Seguindo a lacuna identificada na literatura sobre este tema, partindo de uma amostra de 100 empresas escolhidas a partir da Fortune 500, pretende-se com esta dissertação estabelecer a correlação entre Corporate Governance e Responsabilidade Social Corporativa com o respetivo desempenho financeiro. Após a recolha e análise dos dados correspondentes a um intervalo de 5 anos, foi comprovado que há uma conexão positiva entre os dois conceitos e o desempenho financeiro das organizações nesta amostra, quando medido por uma das métricas. Dentro do conceito de CSR, os componentes ambientais demonstraram ter o maior impacto no conceito geral. E, além disso, a Corporate Governance demonstrou estar positivamente dependente da Responsabilidade Social Corporativa.