Journal articles: 'MoS2 multilayers'

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Fraih, Ali Jabbar, and Zainab Ali Hrbe. "Enhanced photocatalytic performance of molybdenum disulfide-copper oxide nanoparticles photoanodes." European Physical Journal Applied Physics 96, no. 3 (December 2021): 30102. http://dx.doi.org/10.1051/epjap/2021210192.

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In this paper, the molybdenum disulfide (MoS2)/copper oxide (CuO) heterostructure is introduced in a very simple way for photoelectrochemical application. MoS2 multilayers were prepared by sonication method and decorated with copper oxide nanoparticles through its thin film deposition layer and heating in argon atmosphere. SEM, TEM, AFM, absorption and Raman analyses were employed to characterize the nanostructures. The results show that the presence of copper oxide nanoparticles reduces the recombination rate of photogenerated electron-holes in MoS2 multilayers and produces a significant photocurrent compared to the individual MoS2 electrode. Such a proposed structure demonstrates a high potential for photoelectrochemical applications.

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Lince, Jeffrey R., Michael R. Hilton, and Arun S. Bommannavar. "Metal incorporation in sputter-deposited MoS2 films studied by extended x-ray absorption fine structure." Journal of Materials Research 10, no. 8 (August 1995): 2091–105. http://dx.doi.org/10.1557/jmr.1995.2091.

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Solid lubricant films produced by cosputtering metals with MoS2 and by forming metal/MoS2 multilayers are being planned for use in the next generation of solid lubricated devices on spacecraft, including gimbal and sensor bearings, actuators, and sliding electrical contacts. The films exhibit increased densities and wear lives compared to films without additives, but the mechanism of density enhancement is not well understood. The extended x-ray absorption fine structure (EXAFS) technique is ideal for elucidating the structure of these poorly crystalline films. We analyzed MoS2 films cosputtered with 0, 2, and 10% Ni, as well as Ni/MoS2 and Au(Pd)/MoS2 multilayer films. The results obtained at the Mo-K absorption edge showed that the metal-containing films comprised predominantly the same nanocrystalline phases present in similar films without added metals: pure MoS2 and a MoS2−xOx phase. MoS2−xOx is isostructural with MoS2, with O atoms substituting for S atoms in the MoS2 crystal lattice. For all Ni-containing films, EXAFS data obtained at the Ni-K absorption edge showed that the Ni had not chemically reacted with the MoS2−xOx and MoS2, but formed a disordered NiOx phase. However, Ni-cosputtered films showed decreasing Mo-Mo bond lengths in the MoS2−xOx phase with increasing Ni content, probably due to preferential oxidation of Ni compared to MoS2. EXAFS of these Ni-cosputtcred films showed only a small decrease in short-range order with Ni content, while x-ray diffraction showed a concurrent large decrease in long-range order. The results indicate that film densification in Ni-cosputtered films is caused by NiOx formation at the edges of nucleating MoS2−xOx/MoS2 crystallites, limiting the crystallite size attainable within the films.

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Vaknin, Yonatan, Ronen Dagan, and Yossi Rosenwaks. "Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors." Nanomaterials 9, no. 6 (June 14, 2019): 882. http://dx.doi.org/10.3390/nano9060882.

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The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.

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Shakya, Jyoti, Gayathri H N, and Arindam Ghosh. "Defects-assisted piezoelectric response in liquid exfoliated MoS₂ nanosheets." Nanotechnology 33, no. 7 (November 26, 2021): 075710. http://dx.doi.org/10.1088/1361-6528/ac368b.

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Abstract MoS2 is an intrinsic piezoelectric material which offers applications such as energy harvesting, sensors, actuators, flexible electronics, energy storage and more. Surprisingly, there are not any suitable, yet economical methods that can produce quality nanosheets of MoS2 in large quantities, hence limiting the possibility of commercialisation of its applications. Here, we demonstrate controlled synthesis of highly crystalline MoS2 nanosheets via liquid phase exfoliation of bulk MoS2, following which we report piezoelectric response from the exfoliated nanosheets. The method of piezo force microscopy was employed to explore the piezo response in mono, bi, tri and multilayers of MoS2 nanosheets. The effective piezoelectric coefficient of MoS2 varies from 9.6 to 25.14 pm V−1. We attribute piezoelectric response in MoS2 nanosheets to the defects formed in it during the synthesis procedure. The presence of defects is confirmed by x-ray photoelectron spectroscopy.

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Panasci, Salvatore E., Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, et al. "Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization." Nanomaterials 12, no. 2 (January 6, 2022): 182. http://dx.doi.org/10.3390/nano12020182.

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In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO2/Si substrate. XPS analyses confirmed that the sulfurization was very effective in the reduction of the oxide to MoS2, with only a small percentage of residual MoO3 present in the final film. High-resolution TEM/STEM analyses revealed the formation of few (i.e., 2–3 layers) of MoS2 nearly aligned with the SiO2 surface in the case of the thinnest (~2.8 nm) MoO3 film, whereas multilayers of MoS2 partially standing up with respect to the substrate were observed for the ~4.2 nm one. Such different configurations indicate the prevalence of different mechanisms (i.e., vapour-solid surface reaction or S diffusion within the film) as a function of the thickness. The uniform thickness distribution of the few-layer and multilayer MoS2 was confirmed by Raman mapping. Furthermore, the correlative plot of the characteristic A1g-E2g Raman modes revealed a compressive strain (ε ≈ −0.78 ± 0.18%) and the coexistence of n- and p-type doped areas in the few-layer MoS2 on SiO2, where the p-type doping is probably due to the presence of residual MoO3. Nanoscale resolution current mapping by C-AFM showed local inhomogeneities in the conductivity of the few-layer MoS2, which are well correlated to the lateral changes in the strain detected by Raman. Finally, characteristic spectroscopic signatures of the defects/disorder in MoS2 films produced by sulfurization were identified by a comparative analysis of Raman and photoluminescence (PL) spectra with CVD grown MoS2 flakes.

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Joo, Piljae, Kiyoung Jo, Gwanghyun Ahn, Damien Voiry, Hu Young Jeong, Sunmin Ryu, Manish Chhowalla, and Byeong-Su Kim. "Functional Polyelectrolyte Nanospaced MoS2 Multilayers for Enhanced Photoluminescence." Nano Letters 14, no. 11 (October 2, 2014): 6456–62. http://dx.doi.org/10.1021/nl502883a.

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Wei, Yuefan, Van-Thai Tran, Chenyang Zhao, Hongfei Liu, Junhua Kong, and Hejun Du. "Robust Photodetectable Paper from Chemically Exfoliated MoS2–MoO3 Multilayers." ACS Applied Materials & Interfaces 11, no. 24 (June 5, 2019): 21445–53. http://dx.doi.org/10.1021/acsami.9b01515.

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Li, Wei, Mahboobeh Shahbazi, Kaijian Xing, Tuquabo Tesfamichael, Nunzio Motta, and Dong-Chen Qi. "Highly Sensitive NO2 Gas Sensors Based on MoS2@MoO3 Magnetic Heterostructure." Nanomaterials 12, no. 8 (April 11, 2022): 1303. http://dx.doi.org/10.3390/nano12081303.

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Recently, two-dimensional (2D) materials and their heterostructures have attracted considerable attention in gas sensing applications. In this work, we synthesized 2D MoS2@MoO3 heterostructures through post-sulfurization of α-MoO3 nanoribbons grown via vapor phase transport (VPT) and demonstrated highly sensitive NO2 gas sensors based on the hybrid heterostructures. The morphological, structural, and compositional properties of the MoS2@MoO3 hybrids were studied by a combination of advanced characterization techniques revealing a core-shell structure with the coexistence of 2H-MoS2 multilayers and intermediate molybdenum oxysulfides on the surface of α-MoO3. The MoS2@MoO3 hybrids also exhibit room-temperature ferromagnetism, revealed by vibrating sample magnetometry (VSM), as a result of the sulfurization process. The MoS2@MoO3 gas sensors display a p-type-like response towards NO2 with a detection limit of 0.15 ppm at a working temperature of 125 °C, as well as superb selectivity and reversibility. This p-type-like sensing behavior is attributed to the heterointerface of MoS2-MoO3 where interfacial charge transfer leads to a p-type inversion layer in MoS2, and is enhanced by magnetic dipole interactions between the paramagnetic NO2 and the ferromagnetic sensing layer. Our study demonstrates the promising application of 2D molybdenum hybrid compounds in gas sensing applications with a unique combination of electronic and magnetic properties.

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Dagan, R., Y. Vaknin, A. Henning, J. Y. Shang, L. J. Lauhon, and Y. Rosenwaks. "Two-dimensional charge carrier distribution in MoS2 monolayer and multilayers." Applied Physics Letters 114, no. 10 (March 11, 2019): 101602. http://dx.doi.org/10.1063/1.5078711.

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Jiao, Lei, Yuehui Wang, Yusong Zhi, Wei Cui, Zhengwei Chen, Xiao Zhang, Wenjing Jie, and Zhenping Wu. "Fabrication and Characterization of Two-Dimensional Layered MoS2 Thin Films by Pulsed Laser Deposition." Advances in Condensed Matter Physics 2018 (2018): 1–5. http://dx.doi.org/10.1155/2018/3485380.

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Direct growth of uniform wafer-scale two-dimensional (2D) layered materials using a universal method is of vital importance for utilizing 2D layers into practical applications. Here, we report on the structural and transport properties of large-scale few-layer MoS2 back-gated field effect transistors (FETs), fabricated using conventional pulsed laser deposition (PLD) technique. Raman spectroscopy and transmission electron microscopy results confirmed that the obtained MoS2 layers on SiO2/Si substrate are multilayers. The FETs devices exhibit a relative high on/off ratio of 5 × 102 and mobility of 0.124 cm2V−1S−1. Our results suggest that the PLD would be a suitable pathway to grow 2D layers for future industrial device applications.

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Liu, Jun, Ankur Goswami, Keren Jiang, Faheem Khan, Seokbeom Kim, Ryan McGee, Zhi Li, Zhiyu Hu, Jungchul Lee, and Thomas Thundat. "Direct-current triboelectricity generation by a sliding Schottky nanocontact on MoS2 multilayers." Nature Nanotechnology 13, no. 2 (December 11, 2017): 112–16. http://dx.doi.org/10.1038/s41565-017-0019-5.

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Lanzillo, Nicholas A., Terrance P. O’Regan, and Saroj K. Nayak. "Band structure modulation in MoS2 multilayers and heterostructures through electric field and strain." Computational Materials Science 112 (February 2016): 377–82. http://dx.doi.org/10.1016/j.commatsci.2015.11.007.

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13

Casanove, M. J., E. Snoeck, C. Penchenat, H. Ardhuin, R. Mamy, B. Raquet, M. D. Ortega, M. Goiran, A. R. Fert, and J. C. Ousset. "Microstructural studies and magneto-optic properties of multilayers epitaxially grown on MoS2 substrates." Thin Solid Films 275, no. 1-2 (April 1996): 129–32. http://dx.doi.org/10.1016/0040-6090(95)07069-9.

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14

Mabiala-Poaty, H. B., D. H. Douma, B. R. Malonda-Boungou, R. E. Mapasha, and B. M’Passi-Mabiala. "First-principles studies of SnS2, MoS2 and WS2 stacked van der Waals hetero-multilayers." Computational Condensed Matter 16 (September 2018): e00303. http://dx.doi.org/10.1016/j.cocom.2018.e00303.

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15

Park, Jun Woo, Hyeon Seob So, Sung Kim, Suk-Ho Choi, Hosun Lee, Jinhwan Lee, Changgu Lee, and Youngchan Kim. "Optical properties of large-area ultrathin MoS2 films: Evolution from a single layer to multilayers." Journal of Applied Physics 116, no. 18 (November 14, 2014): 183509. http://dx.doi.org/10.1063/1.4901464.

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Gu, Kunming, Sheng Yu, Kwesi Eshun, Haiwen Yuan, Huixian Ye, Jiaoning Tang, Dimitris E. Ioannou, Changshi Xiao, Hui Wang, and Qiliang Li. "Two-dimensional hybrid layered materials: strain engineering on the band structure of MoS2/WSe2hetero-multilayers." Nanotechnology 28, no. 36 (August 14, 2017): 365202. http://dx.doi.org/10.1088/1361-6528/aa7a34.

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Figueroa del Valle, Diana Gisell, Eduardo Aluicio-Sarduy, and Francesco Scotognella. "Photonic band gap in 1D multilayers made by alternating SiO2 or PMMA with MoS2 or WS2 monolayers." Optical Materials 48 (October 2015): 267–70. http://dx.doi.org/10.1016/j.optmat.2015.08.012.

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18

Yang, Yan, Weiming Liu, Tiantian Huang, Mengxia Qiu, Rui Zhang, Wanli Yang, Junbo He, Xin Chen, and Ning Dai. "Low Deposition Temperature Amorphous ALD-Ga2O3 Thin Films and Decoration with MoS2 Multilayers toward Flexible Solar-Blind Photodetectors." ACS Applied Materials & Interfaces 13, no. 35 (August 26, 2021): 41802–9. http://dx.doi.org/10.1021/acsami.1c11692.

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Kim, Min Su, Changwon Seo, Hyun Kim, Jubok Lee, Dinh Hoa Luong, Ji-Hoon Park, Gang Hee Han, and Jeongyong Kim. "Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers." ACS Nano 10, no. 6 (May 20, 2016): 6211–19. http://dx.doi.org/10.1021/acsnano.6b02213.

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Imam, Safayat Al, Khandakar Mohammad Ishtiak, and Quazi Deen Mohd Khosru. "(Invited) Broadband and Broad Angle Enhanced Light Absorption in MoS₂based Hetero Plasmonic Structure." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1342. http://dx.doi.org/10.1149/ma2022-02361342mtgabs.

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Solar cells, photovoltaic devices and optoelectronic elements needs enhanced light absorption with a wide range of incident angle for better and efficient design. Two-dimensional (2D) materials have exceled in all areas including electrical applications, optical modulations, mechanical as well as chemical implementations due to their direct bandgap and high optical absorption nature[1]. Photon irradiation allows to generate electron-hole pairs in a direct bandgap material such as TMDCs which makes them potential candidates for large amount of light to be trapped. Different structures have been studied to achieve high optical absorption [2][3]. Although one dimensional photonic crystal(1DPC) and defective PC has good optical absorption with wide range and angle [4],[2] number of layers and complexity in structure has made it difficult to be fabricated. MoS2 monolayer structure based on cover spacer, plasmonic and dual substrate layer (SiO2(50nm)/Si ) has also increased optical absorption range and broad angle [5] but TMDC based heterostructures with spacer has improved absorption comparing to previous structures without metallic layer [6]. In this paper, we proposed a dual TMDC-spacer based plasmonic structure with dual substrate for wide and broad range and angle of near perfect optical absorption. The structure considered here is an air/MoS2/Spacer1/MoS2/Spacer2/plasmonic/dual substrate with 0.665nm, 70nm and 50nm layer of MoS2, Au as plasmonic layer and SiO2 as part of dual layer with Si as lossless substate. (Figure 1) For spacers SiO2 and TiO2 are taken with optimized value (figure 2) of 92 and 68nm for enhanced absorption. The transfer matrix of the constituted layer for either transverse electric (TE) or transverse magnetic (TM) polarization was determined using the transfer matrix method (TMM). Both in TE and TM mode, the ~30 and ~40% of enhanced light absorption are observed in proposed structure compared to hetero and mono layer structure (figure 3) with impact of metallic and spacer layer. In case of incident angle, both at resonance frequency of MoS2 and within visible range, broad angle range (00-400 for TE and 00-800 for TM) is observed with wider wavelength. (Figure 4 and figure 5). Impact of various metallic layer on the proposed structure is also observed (Figure 6). Structure with VO2 as plasmonic layer [7] has around ~95% of peak absorption (400nm-550nm) and wide incident angle (00-850) irrespective of polarizations with lieu of spacer hetero-TMDC-stack (Figure 7). Due to multiple layers of structures, collective surface plasmon polaritons (SPP) has an enhanced light absorption within the heterostructure and enhanced electric field distribution of the structure is observed (Figure 8). Table I lists some comparison among various structures and parameters indicates that proposed dual spacer -TMDC based plasmonic heterostructure has wide visible range of wavelength (400-550 nm) with broad angle (00-850) light absorption with both polarizations compare to other counterparts. In this work an enhanced range in both wavelength and incident angle of visible optical absorption is observed in both polarization with plasmonic dual heterostructure is observed and compared with other structures. Such structures are useful for photodetectors and solar cells for maximum absorptions. [1] Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A and Kis A 2013 Ultrasensitive photodetectors based on monolayer MoS 2 Nat. Nanotechnol. 8 497–501 [2] Ansari N and Mohebbi E 2018 Broadband and high absorption in Fibonacci photonic crystal including MoS2 monolayer in the visible range J. Phys. D. Appl. Phys. 51 149–52 [3] Ansari N and Ghorbani F 2018 Light absorption optimization in two-dimensional transition metal dichalcogenide van der Waals heterostructures J. Opt. Soc. Am. B 35 1179 [4] Ansari N and Mohebbi E 2016 Increasing optical absorption in one-dimensional photonic crystals including MoS2 monolayer for photovoltaics applications Opt. Mater. (Amst). 62 152–8 [5] Ansari N, Mohebbi E and Gholami F 2020 Nearly perfect and broadband optical absorption by TMDCs in cover/TMDC/spacer/Au/substrate multilayers Appl. Phys. B Lasers Opt. 126 1–6 [6] Ansari N, Goudarzi B and Mohebbi E 2021 Design of narrowband or broadband absorber by heterostructures including TMDCs and spacers Opt. Laser Technol. 138 106771 [7] Das H R and Arya S C 2021 Performance improvement of VO2 and ITO based plasmonic electro-absorption modulators at 1550 nm application wavelength Opt. Commun. 479 Figure 1

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Zhang, Ping, Puyou Ying, Changhong Lin, Tao Yang, Jianbo Wu, Min Huang, Tianle Wang, Yihang Fang, and Vladimir Levchenko. "Effect of Modulation Periods on the Mechanical and Tribological Performance of MoS2–TiL/MoS2–TiH Multilayer Coatings." Coatings 11, no. 10 (October 9, 2021): 1230. http://dx.doi.org/10.3390/coatings11101230.

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MoS2–Ti coating is a widely used solid lubricant owing to its low friction coefficient. The mechanical and tribological performance of the coating can be further improved via introducing a multilayer structure, which is closely related to the modulation period and significantly affects the properties of the coating. Herein, the effect of two different modulation periods on the mechanical and tribological performance of the MoS2–TiL/MoS2–TiH multilayer coatings (where L and H represent low and high-powered sputtering of the titanium target) was studied. The performance of the coatings was found to depend on modulation periods of single layer thickness and thickness ratio, respectively. When the thickness ratio of MoS2–TiL layer to MoS2–TiH layer was fixed with different number of layers, the adverse effects of the interface outweighed the beneficial effect; thus, the mechanical and tribological performance of the multilayer coatings were improved with an increase in the single layer thickness. When the effect of the multilayer interfaces on the studied coatings was similar with the same number of layers, the MoS2–TiH layer had more impact on the hardness of the MoS2–TiL/MoS2–TiH multilayer coatings, whereas the MoS2–TiL layer substantially affected the adhesion properties, friction behavior and wear resistance. This study can provide a way to regulate coatings with different performance requirements via building different multilayer microstructures.

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Kang, Jia Jie, Cheng Biao Wang, Hai Dou Wang, Bin Shi Xu, Jia Jun Liu, and Guo Lu Li. "Research on the Tribological Property of Synthetic Multilayer MoS₂/FeS Film under Dry Condition." Advanced Materials Research 217-218 (March 2011): 1117–22. http://dx.doi.org/10.4028/www.scientific.net/amr.217-218.1117.

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In this paper, we adopted a novel method, namely, magnetron sputtering + low temperature ion sulfurizing composite technology to prepare synthetic MoS2/FeS multilayer film. The obtained film has a quite smooth surface with plenty of spherical particles. The friction tests were carried out on a ball-on-disc tester under dry condition. During the whole test, the friction coefficient of the MoS2/FeS multilayer film was always lower than that of the original 1045 steel and FeS film. In addition, the wear scar depth of the MoS2/FeS multilayer film was also low. It is undoubtedly that the synthetic MoS2/FeS multilayer film possesses excellent friction-reducing and wear-resisting behaviors.

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Fu, Yanlong, Tengfei He, Wu Yang, Jiao Xu, Bo Mu, Xianjuan Pang, and Peng Wang. "Structure, Mechanical and Tribological Properties of MoSN/MoS2 Multilayer Films." Coatings 9, no. 2 (February 10, 2019): 108. http://dx.doi.org/10.3390/coatings9020108.

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MoSN/MoS2 multilayer films were deposited by a sputtering MoS2 target in alternate Ar and Ar/N2 mixed atmospheres with different nitrogen flow rates. The influence of nitrogen flow rates on the microstructure, mechanical and tribological properties of the prepared films were investigated. The multilayer film exhibited the preferred orientation of (002) plane for MoS2 sublayers and amorphous structure for MoSN sublayers. Introducing N2 into the source gas resulted in a much more compact structure for multilayer films due to the suppression of columnar growth of MoS2 film. With the increase of the nitrogen flow rate, the hardness of the multilayer film firstly increased from 2.3 to 10.5 GPa as the nitrogen flow rate increased from 4 to 10 sccm and then turned downwards to 6.5 GPa at 20 sccm. MoSN/MoS2 film deposited with an optimized microstructure exhibited low friction coefficients below 0.03 and a wear life higher than 1.8×105 revolutions in vacuum. Meanwhile, the optimized film showed an ultralow friction coefficient of 0.004~0.01 and wear rate of 4.7 × 10−7 mm3/N·m in an ultrahigh vacuum. Both the enhanced hardness by N-doping and sustainable formed MoS2 tribofilm contributed to the improved tribological property of MoSN/MoS2 multilayer film.

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Xiong, Guodong, Huiping Zhu, Lei Wang, Linsheng Fan, Zhongshan Zheng, Bo Li, Fazhan Zhao, and Zhengsheng Han. "Radiation damage and abnormal photoluminescence enhancement of multilayer MoS₂ under neutron irradiation." Journal of Physics: Condensed Matter 34, no. 5 (November 11, 2021): 055701. http://dx.doi.org/10.1088/1361-648x/ac31f8.

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Abstract In this work, neutron irradiation effects on the optical property of multilayer MoS2 have been investigated in depth. Our results display that the intensity of the photoluminescence (PL) spectra of MoS2 flakes tends to slightly decrease after exposed to neutron irradiation with low fluence of 4.0 × 108 n/cm2. An unexpected improvement of PL intensity, however, is observed when the irradiation fluence accumulates to 3.2 × 109 n/cm2. Combined with the experimental results and first-principles calculations, neutron irradiation damage effects of multilayer MoS2 are analyzed deeply. Sulfur vacancy (V S) is found to be responsible for the attenuation of the PL intensity as a major defect. In addition, our results reveal that the adsorbed hydroxyl groups (OH) and oxygen atoms (O) on the surface of MoS2 flakes not only promote the transition from trion excitons to neutral excitons, but also repair the V S in MoS2, both of which contribute to the enhancement of luminescence properties. The detailed evolution process of irradiation-induced defects is discussed to reveal the microscopic mechanism of the significantly difference in luminescence intensity of MoS2 under different irradiation stages. This work has great significance for evaluating the neutron radiation hardness of multilayer MoS2, which is helpful to enrich the fundamental research on neutron irradiation effects.

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Kiriya, Daisuke. "(Invited) Metallic Transport Behaviors in Monolayer and Multi-Layer MoS₂ By Surface-Charge Transfer Interaction with Redox-Active Molecules." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1312. http://dx.doi.org/10.1149/ma2022-02361312mtgabs.

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In the last decade, transition metal chalcogenides (TMDCs), e.g., MoS2 and WSe2, have gathered attention as semiconducting 2D materials. Modulation of carrier concentrations in TMDCs is a crucial matter for applying to semiconductor devices. So far, we have developed a method to gain the carrier concentrations of MoS2 by a junction with organic molecules and achieved obtaining a degenerately doped state in the MoS2. The mechanism of the doping is a surface-charge transfer interaction at the interface. Although the transfer characteristic behaviors show the degenerately doped state (small ON/OFF ratio), the details of the transport behavior have not been well understood. In this presentation, I will discuss the details of the device characteristics of the monolayer and multilayer MoS2 metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a junction of redox-active molecules in a manner of the surface-charge transfer interaction. The devices were fabricated via standard lithography (e-beam and photolithography) techniques to prepare each monolayer and multilayer MoS2 MOSFETs. Transport properties in the MoS2 MOSFETs were measured in the as-prepared device and the device after the molecular doping. The dopant molecule is benzyl viologen (BV) molecule which is known as a redox-active molecule with high-reduction potential. After the doping with BV molecules, the MoS2 MOSFET showed a small ON/OFF ratio in the transfer characteristic curves, indicating a degenerately doped state. The identical device further showed the metallic behavior in the temperature dependence (the conductivity increases with decreasing the temperature). Both monolayer and multilayer MoS2 MOSFETs showed similar metallic behavior. This metallic transport behavior changes to an insulative regime when applying gate-voltage to reduce the carrier concentrations in the channel MoS2. Therefore, the gate-electrostatic induced metal-insulator-transition was suggested. At the conference, I will discuss the details of the transport behaviors, gate-potential and temperature dependence of the contact resistance. In addition, I will also discuss potential candidates of other molecules for obtaining doping to TMDCs for going forward the 2D materials-based electronics. REF: Matsuyama, et al., "Metallic transport in monolayer and multilayer molybdenum disulfides by molecular surface-charge transfer doping", ACS Appl. Mater. Interfaces, 2022, 14, 8163-8170.

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Zhu, Liwen, Xiu Cao, Chenyang Gong, Aihua Jiang, Yong Cheng, and Jianrong Xiao. "Preparation of Cu3N/MoS2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance." Materials 13, no. 8 (April 16, 2020): 1873. http://dx.doi.org/10.3390/ma13081873.

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Cu3N/MoS2 heterojunction was prepared through magnetron sputtering, and its optical band gap was investigated. Results showed that the prepared Cu3N/MoS2 heterojunction had a clear surface heterojunction structure, uniform surface grains, and no evident cracks. The optical band gap (1.98 eV) of Cu3N/MoS2 heterojunction was obtained by analyzing the ultraviolet-visible transmission spectrum. The valence and conduction band offsets of Cu3N/MoS2 heterojunction were 1.42 and 0.82 eV, respectively. The Cu3N film and multilayer MoS2 formed a type-II heterojunction. After the two materials adhered to form the heterojunction, the interface electrons flowed from MoS2 to Cu3N because the latter had higher Fermi level than the former. This behavior caused the formation of additional electrons in the Cu3N and MoS2 layers and the change in optical band gap, which was conducive to the charge separation of electrons in MoS2 or MoS2 holes. The prepared Cu3N/MoS2 heterojunction has potential application in various high-performance photoelectric devices, such as photocatalysts and photodetectors.

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Zhang, Xiao-Mei, Sian-Hong Tseng, and Ming-Yen Lu. "Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping." Applied Sciences 9, no. 6 (March 15, 2019): 1110. http://dx.doi.org/10.3390/app9061110.

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Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in MoS2 is necessary. In this paper, we demonstrate a p-type multilayer MoS2 photodetector with selective-area doping using CHF3 plasma treatment. Microscopic and spectroscopic characterization techniques, including atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), are used to investigate the morphological and electrical modification of the p-type doped MoS2 surface after CHF3 plasma treatment. Back-gated p-type MoS2 field-effect transistors (FETs) are fabricated with an on/off current ratio in the order of 103 and a field-effect mobility of 65.2 cm2V−1s−1. They exhibit gate-modulated ultraviolet photodetection with a rapid response time of 37 ms. This study provides a promising approach for the development of mild plasma-doped MoS2 as a 2D material in post-silicon electronic and optoelectronic device applications.

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Min, Misook, Gustavo A. Saenz, and Anupama B. Kaul. "Optoelectronic properties of graphene quantum dots with molybdenum disulfide." MRS Advances 4, no. 10 (2019): 615–20. http://dx.doi.org/10.1557/adv.2019.50.

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ABSTRACTThe presence of a direct optical bandgap in the transition metal dichalcogenide (TMD) layers leads to promising applications in optoelectronic devices such as phototransistors and photodetectors. These devices are commonly fabricated using few-layer and monolayer MoS2 sheets obtained using mechanical exfoliation or chemical vapor deposition techniques. The hybrid structure of quantum dots (QDs) and 2D materials has been investigated to provide outstanding properties for various applications. Herein we report the fabrication of a hybrid QDs/MoS2 photodetector consisting of graphene quantum dots (GQDs) and multilayer MoS2 sheets. The hybrid GQDs and MoS2 films are characterized by atomic force microscopy (AFM); additionally, the I-V characteristics are measured by two-point probe station.

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Seo, Won Seok, Dae Ki Kim, Ji-Hoon Han, Kang-Bak Park, Su Chak Ryu, Nam Ki Min, and Joon Hyub Kim. "Functionalization of Molybdenum Disulfide via Plasma Treatment and 3-Mercaptopropionic Acid for Gas Sensors." Nanomaterials 10, no. 9 (September 17, 2020): 1860. http://dx.doi.org/10.3390/nano10091860.

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Monolayer and multilayer molybdenum disulfide (MoS2) materials are semiconductors with direct/indirect bandgaps of 1.2–1.8 eV and are attractive due to their changes in response to electrical, physicochemical, biological, and mechanical factors. Since the desired electrical properties of MoS2 are known, research on its electrical properties has increased, with focus on the deposition and growth of large-area MoS2 and its functionalization. While research on the large-scale production of MoS2 is actively underway, there is a lack of studies on functionalization approaches, which are essential since functional groups can help to dissolve particles or provide adequate reactivity. Strategies for producing films of functionalized MoS2 are rare, and what methods do exist are either complex or inefficient. This work introduces an efficient way to functionalize MoS2. Functional groups are formed on the surface by exposing MoS2 with surface sulfur vacancies generated by plasma treatment to 3-mercaptopropionic acid. This technique can create 1.8 times as many carboxyl groups on the MoS2 surface compared with previously reported strategies. The MoS2-based gas sensor fabricated using the proposed method shows a 2.6 times higher sensitivity and much lower detection limit than the untreated device.

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Dixit, Vijay, Salil Nair, Jolly Joy, C. U. Vyas, Som Narayan, P. K. Jha, G. K. Solanki, and V. M. Pathak. "Surface topography and enhanced photo detecting properties of multilayer MoSe₂ crystal." European Physical Journal Applied Physics 97 (2022): 8. http://dx.doi.org/10.1051/epjap/2022210204.

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The high photo responsive property and flexibility of tailoring the optical properties of the semiconducting layered transition metal dichalcogenides are appealing and makes them potentially suitable for the optoelectronic and photo detecting applications. In the present study molybdenum, diselenide (MoSe2) crystals were grown by direct vapor transport (DVT) technique in a dual zone horizontal furnace. To affirm the elemental composition and stoichiometric proportion of the as grown crystals, energy dispersive analysis of the x-ray was adopted. The surface morphological features of the grown crystals were investigated using light microscopy and scanning electron microscopy that attested the multilayer growth of crystals. The presence of single-crystalline phase and hexagonal structure was ascertained by employing transmission electron microscopy. The direct optical energy band gap of 1.42 eV was determined by UV-Visible spectroscopy. The Raman spectroscopy analysis carried out on the grown crystals revealed the presence of an A1g mode of vibration. Photo-detecting properties of the multilayer MoSe2 crystals were studied by exposing the basal plane of the photo-detecting sample by the polychromatic source of 70 mW/cm2 intensity at different biasing voltages from 1 V to 5 V respectively. The eminent sensing properties of the grown multilayered crystals are unveiled by the high photo responsivity 58.2 mA/Wm2 and specific detectivity 2.12 × 107 Jones. The effect of biasing voltage was prominently seen in the rise of photocurrent and detecting properties MoSe2 crystals.

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Guo Sen, 郭森, 赵欣 Zhao Xin, 聂兆刚 Nie Zhaogang, 马琳 Ma Lin, 张芳腾 Zhang Fangteng, 赵韦人 Zhao Weiren, 李新忠 Li Xinzhong, 张家骅 Zhang Jiahua, and 章文春 Zhang Wenchun. "多层MoS2激子形成过程中多体效应的超快光谱响应研究." Chinese Journal of Lasers 48, no. 11 (2021): 1111002. http://dx.doi.org/10.3788/cjl202148.1111002.

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Boychuk, V. M., L. O. Shyyko, V. O. Kotsyubynsky, and A. Kachmar. "Structure and morphology of MoS2 / Carbon nanocomposite materials." Фізика і хімія твердого тіла 20, no. 1 (April 1, 2019): 63–68. http://dx.doi.org/10.15330/pcss.20.1.68.

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The paper presents the experimental results of the hydrothermal synthesis composite materials based on the MoS2 and carbon using different types of detergents (cetyltrimethylammonium bromide and Triton-X) or microporous carbon. The synthesized material was studied by XRD, TEM, and EDS. The investigation of structural and morphological properties of the obtained nanocomposite material shows that the nanoparticles (the average size of about 40 nm) obtained by detergent-assisted procedure have a multilayer crystal ordered superficial layers where quasi-two-dimensional MoS2 layers alternate with amorphous carbon. The annealing at 500oC in argon caused the formation turbostratically stacked layers of crystalline MoS2 with amorphous carbon located in the interlayer space. The core-shall morphology (carbon nanoparticles on the surface of MoS2 clusters) was observed for composite materials synthesized on the base of microporous carbon.

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Almohaimeed, Ziyad M., Shumaila Karamat, Rizwan Akram, Saira Sarwar, Asad Javaid, and Ahmet Oral. "An Effective Route for the Growth of Multilayer MoS2 by Combining Chemical Vapor Deposition and Wet Chemistry." Advances in Condensed Matter Physics 2022 (February 9, 2022): 1–7. http://dx.doi.org/10.1155/2022/3233252.

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Molybdenum disulfide (MoS2) is an actively pursuing material of the 2D family due to its semiconducting characteristics, making it a potential candidate for nano and optoelectronics application. MoS2 growth from molybdenum and sulphur precursors by chemical vapor depositions (CVD) is used widely, but molybdates’ conversion into MoS2 via CVD is overlooked previously. Direct growth of MoS2 on the desired pattern not only reduces the interfacial defects but also reduces the complexities in device fabrication. In this work, we combine the wet synthesis and chemical vapor deposition method where sodium molybdate and L-cysteine are used to make a solution. With the dip coating, the mixture is coated on the substrates, and then, chemical vapor deposition is used to convert the chemicals into MoS2. Raman spectroscopy revealed the presence of oxysulphides (peaks number value) other than A 1 g and E 2 g 1 , where heat treatment was performed in the presence of Ar gas flow only. On the other hand, the films reducing in the presence of sulphur and argon gas promote only A 1 g and E 2 g 1 peaks of MoS2, which confirms complete transformation. XRD diffraction showed a very small change in the diffraction peaks and value of strain, whereas SEM imaging showed the flakes formation for MoS2 samples which were heated in the presence of sulphur. X-ray photoelectron spectroscopy is also performed for the chemical composition and to understand the valence state of Mo, S, and O and other species.

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Zhang, Rui, Hong Zhang, Li Qiao, and Peng Wang. "Damage Effects of Heavy Ion Irradiation on MOST/C Multilayer Films." Coatings 13, no. 1 (January 12, 2023): 176. http://dx.doi.org/10.3390/coatings13010176.

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In this study, the nano-multilayer film was prepared by alternating deposition of MoS2/Ti composite layer and amorphous C layer, and the irradiation damage effect was studied by the heavy ion bombardment experiment of 2 MeV Au2+. The results show that the irradiation region of the film is about 500 nm deep. The MoS2 crystal inside the MoS2/Ti composite layer in the irradiation-affected area is destroyed by incident Au2+ ions and turns into a disordered state. With the increase of irradiation dose, the hardness of the film increases from 1.58 to 3.28 GPa, and the wear life of the film decreases sharply from 3 × 104 to 5 × 103 r due to the destruction of the internal crystal and the embrittlement of the structure. In addition, with the increase of irradiation dose, the interlayer interface is gradually blurred and the interlayer diffusion is gradually aggravated.

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Baradaran Ghasemi, A. H., E. Faridi, N. Ansari, and S. M. Mohseni. "Extraordinary magneto-optical Kerr effect via MoS2 monolayer in Au/Py/MoS2 plasmonic cavity." RSC Advances 6, no. 108 (2016): 106591–99. http://dx.doi.org/10.1039/c6ra21314f.

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We demonstrate a multilayer magnetoplasmonic structure fabricated from MoS₂ monolayer to significantly increase the transverse magneto-optical Kerr effect (TMOKE) with a signal Q-factor more than 600.

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Li, Wei, Yung-Jui Huang, Pao-Hung Lin, Liang-Chiun Chao, and Kuei-Yi Lee. "Supercapacitor characteristics of MoS₂ and MoO_x coated onto honeycomb-shaped carbon nanotubes." Journal of Vacuum Science & Technology B 40, no. 3 (May 2022): 032401. http://dx.doi.org/10.1116/6.0001773.

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Two-dimensional molybdenum disulfide (MoS2) with multilayer hierarchical structures is generally considered to be able to provide more active sites and shorter diffusion channels for electrolytes, which make them extremely suitable for supercapacitor applications. Nevertheless, the MoS2 poor conductivity and rare surface area are the major technical obstacles. Herein, we demonstrated a honeycomb basis using carbon nanotubes (CNTs). The honeycomb-shaped carbon skeleton provides a relatively larger surface area to store more ions with a more stable and stronger structure to maintain long-term electrochemical tests. During MoS2 fabrication, MoOx was also synthesized onto CNTs. MoOx influenced the electrochemical test results. Thermal annealing was conducted to remove the MoOx attachments to assure the optimal capacitance value. For the particular composite honeycomb structure (MoS2/CNTs) used in this research, the specific capacitance increased from 4.7 F/g (CNTs) to 75 F/g (MoS2 + MoOx/CNTs), measured using cyclic voltammetry measurements. The specific capacitance further reached 425 F/g using thermal annealing at optimal temperature, 700 °C. The designed electrode materials demonstrated excellent electrochemical characteristics and had great potential for future electrochemical applications.

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Li, Wei, Yung-Jui Huang, Pao-Hung Lin, Liang-Chiun Chao, and Kuei-Yi Lee. "Supercapacitor characteristics of MoS₂ and MoO_x coated onto honeycomb-shaped carbon nanotubes." Journal of Vacuum Science & Technology B 40, no. 3 (May 2022): 032401. http://dx.doi.org/10.1116/6.0001773.

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Two-dimensional molybdenum disulfide (MoS2) with multilayer hierarchical structures is generally considered to be able to provide more active sites and shorter diffusion channels for electrolytes, which make them extremely suitable for supercapacitor applications. Nevertheless, the MoS2 poor conductivity and rare surface area are the major technical obstacles. Herein, we demonstrated a honeycomb basis using carbon nanotubes (CNTs). The honeycomb-shaped carbon skeleton provides a relatively larger surface area to store more ions with a more stable and stronger structure to maintain long-term electrochemical tests. During MoS2 fabrication, MoOx was also synthesized onto CNTs. MoOx influenced the electrochemical test results. Thermal annealing was conducted to remove the MoOx attachments to assure the optimal capacitance value. For the particular composite honeycomb structure (MoS2/CNTs) used in this research, the specific capacitance increased from 4.7 F/g (CNTs) to 75 F/g (MoS2 + MoOx/CNTs), measured using cyclic voltammetry measurements. The specific capacitance further reached 425 F/g using thermal annealing at optimal temperature, 700 °C. The designed electrode materials demonstrated excellent electrochemical characteristics and had great potential for future electrochemical applications.

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Seo, Seung Gi, Jae Hyeon Ryu, Seung Yeob Kim, Jinheon Jeong, and Sung Hun Jin. "Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors." Nanomaterials 11, no. 6 (June 17, 2021): 1586. http://dx.doi.org/10.3390/nano11061586.

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Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS2 TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS2 photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS2 TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS2 TFTs. Transfer and output characteristics of the MoS2 TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS2 as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.

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Zhang, Xinwu, Dawei He, Lixin Yi, Siqi Zhao, Jiaqi He, Yongsheng Wang, and Hui Zhao. "Electron dynamics in MoS2-graphite heterostructures." Nanoscale 9, no. 38 (2017): 14533–39. http://dx.doi.org/10.1039/c7nr04763k.

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Kwak, Joon Young, Jeonghyun Hwang, Brian Calderon, Hussain Alsalman, Nini Munoz, Brian Schutter, and Michael G. Spencer. "Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts." Nano Letters 14, no. 8 (July 9, 2014): 4511–16. http://dx.doi.org/10.1021/nl5015316.

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Xiao, Yifan, Long Min, Xinke Liu, Wenjun Liu, Usman Younis, Tonghua Peng, Xuanwu Kang, Xiaohan Wu, Shijin Ding, and David Wei Zhang. "Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition." Nanophotonics 9, no. 9 (February 24, 2020): 3035–44. http://dx.doi.org/10.1515/nanoph-2019-0562.

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AbstractThe MoS2 photodetector on different substrates stacked via van der Waals force has been explored extensively because of its great potential in optoelectronics. Here, we integrate multilayer MoS2 on monocrystalline SiC substrate though direct chemical vapor deposition. The MoS2 film on SiC substrate shows high quality and thermal stability, in which the full width at half-maximum and first-order temperature coefficient for the $E_{2g}^1$ Raman mode are 4.6 cm−1 and −0.01382 cm−1/K, respectively. The fabricated photodetector exhibits excellent performance in the UV and visible regions, including an extremely low dark current of ~1 nA at a bias of 20 V and a low noise equivalent of 10−13–10−15 W/Hz1/2. The maximum responsivity of the MoS2/SiC photodetector is 5.7 A/W with the incident light power of 4.35 μW at 365 nm (UV light). Furthermore, the maximum photoconductive gain, noise equivalent power, and normalized detectivity for the fabricated detector under 365 nm illumination are 79.8, 7.08 × 10−15 W/Hz1/2, and 3.07 × 1010 Jonesat, respectively. We thus demonstrate the possibility for integrating high-performance photodetectors array based on MoS2/SiC via direct chemical vapor growth.

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Xiao, Peng, Ju-Hyung Kim, and Soonmin Seo. "Simple Fabrication of Photodetectors Based on MoS2 Nanoflakes and Ag Nanoparticles." Sensors 22, no. 13 (June 22, 2022): 4695. http://dx.doi.org/10.3390/s22134695.

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Low-dimensional transition-metal dichalcogenides (TMDs) have recently emerged as promising materials for electronics and optoelectronics. In particular, photodetectors based on mono- and multilayered molybdenum disulfide (MoS2) have received much attention owing to their outstanding properties, such as high sensitivity and responsivity. In this study, photodetectors based on dispersed MoS2 nanoflakes (NFs) are demonstrated. MoS2 NFs interact with Ag nanoparticles (NPs) via low-temperature annealing, which plays a crucial role in determining device characteristics such as good sensitivity and short response time. The fabricated devices exhibited a rapid response and recovery, good photo-responsivity, and a high on-to-off photocurrent ratio under visible light illumination with an intensity lower than 0.5 mW/cm2.

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Hirakata, Hiroyuki, Yasuyuki Fukuda, and Takahiro Shimada. "Flexoelectric properties of multilayer two-dimensional material MoS₂." Journal of Physics D: Applied Physics 55, no. 12 (December 27, 2021): 125302. http://dx.doi.org/10.1088/1361-6463/ac4367.

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Abstract Two-dimensional (2D) materials exhibit a high strength and flexibility along with unique electrical–mechanical multiphysics properties. In this study, we experimentally demonstrated the electromechanical response of a multilayer 2D material, 2H-phase MoS2, by using a piezoresponse force microscope. In particular, the dominant physical quantity of the deformation response was determined by independently controlling the electric field and electric field gradient by changing the probe shape and material thickness (number of layers). The multilayer MoS2 exhibited an out-of-plane electrical–mechanical deformation response that followed and was inverted with respect to positive and negative voltages, respectively. Moreover, the relationships between the electric field gradient and strain were similar for all shapes of the probe tip and film thickness values. This result indicated that the electrical–mechanical response of this material was dominated by the electric field gradient, and the strain could be attributed to the converse flexoelectric effect. The findings can provide guidance for the realization of ultrathin electromechanical devices.

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Borodin, Bogdan R., Fedor A. Benimetskiy, Valery Yu Davydov, Alexander N. Smirnov, Ilya A. Eliseyev, and Prokhor A. Alekseev. "Photoluminescence enhancement in multilayered MoSe₂ nanostructures obtained by local anodic oxidation." 2D Materials 9, no. 1 (November 12, 2021): 015010. http://dx.doi.org/10.1088/2053-1583/ac325a.

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Abstract Monolayers of transition metal dichalcogenides (TMDCs) exhibit attractive properties and are promising for fabricating photonic and optoelectronic devices, while bulk multilayered structures based on the same materials only recently has revealed many properties useful for nanophotonics. In this regard, the combination of monolayer and multilayer properties in one device (on a single flake) is an important and fruitful task that needs to be solved. In this work, we demonstrate the use of local anodic oxidation to improve the optical properties of multilayer MoSe2 flakes on a gold-covered substrate. Using this method, we fabricated nanostructures demonstrating extraordinarily enhanced photoluminescence (PL), with an intensity up to three orders of magnitude compared to that of the original structure. Low-frequency Raman spectroscopy showed that the nature of this PL enhancement is that the bindings between the layers inside the nanostructures are severely disrupted. This means that the nanostructures consist of quasi-monolayers, which is in good agreement with the intensity and the position of PL peak. Here, we also propose a mechanism of forming these quasi-monolayers. Therefore, this method allows using multilayer TMDC flakes on a conductive substrate to fabricate areas with quasi-monolayer optical properties, exhibiting an enhanced PL intensity.

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Khan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.

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In this paper, near unity broadband absorption of Van der Waals semiconductors on a metallic substrate, and their photovoltaic performances in the visible spectrum are simulated. Ultrathin layered semiconductors such as Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum di-selenide (MoSe2), Tungsten di-selenide (WSe2), Molybdenum ditelluride (MoTe2), and Tungsten ditelluride (WTe2) can create strong interference by damping optical mode in their multilayer form and increase light absorption at their heterojunctions with noble metals. From our simulation, it is observed that this absorbance can reach up to 94% when the semiconductors are placed on a gold substrate. The optimum thickness of these semiconductors in their heterostructures with gold is analyzed to create resonant absorption to generate the maximum amount of current density. The power conversion efficiency of the designed Schottky junction solar cells is calculated from their current density vs bias voltage characteristics that ranges from 1.57% to 6.80%. Moreover, the absorption coefficient, dark current characteristic, electric field intensity distribution in the device, and carrier generation rate during light illumination are presented with a view to characterizing and comparing among the parameters of TMDC based nanoscale solar cell.

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Khan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.

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In this paper, near unity broadband absorption of Van der Waals semiconductors on a metallic substrate, and their photovoltaic performances in the visible spectrum are simulated. Ultrathin layered semiconductors such as Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum di-selenide (MoSe2), Tungsten di-selenide (WSe2), Molybdenum ditelluride (MoTe2), and Tungsten ditelluride (WTe2) can create strong interference by damping optical mode in their multilayer form and increase light absorption at their heterojunctions with noble metals. From our simulation, it is observed that this absorbance can reach up to 94% when the semiconductors are placed on a gold substrate. The optimum thickness of these semiconductors in their heterostructures with gold is analyzed to create resonant absorption to generate the maximum amount of current density. The power conversion efficiency of the designed Schottky junction solar cells is calculated from their current density vs bias voltage characteristics that ranges from 1.57% to 6.80%. Moreover, the absorption coefficient, dark current characteristic, electric field intensity distribution in the device, and carrier generation rate during light illumination are presented with a view to characterizing and comparing among the parameters of TMDC based nanoscale solar cell.

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Ryu, Min-Yeul, Ho-Kyun Jang, Kook Jin Lee, Mingxing Piao, Seung-Pil Ko, Minju Shin, Junghwan Huh, and Gyu-Tae Kim. "Triethanolamine doped multilayer MoS2 field effect transistors." Physical Chemistry Chemical Physics 19, no. 20 (2017): 13133–39. http://dx.doi.org/10.1039/c7cp00589j.

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Park, Min Ji, Sum-Gyun Yi, Joo Hyung Kim, and Kyung-Hwa Yoo. "Metal–insulator crossover in multilayered MoS2." Nanoscale 7, no. 37 (2015): 15127–33. http://dx.doi.org/10.1039/c5nr05223h.

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Dixit, Tejendra, Ankit Arora, Ananth Krishnan, K. Lakshmi Ganapathi, Pramoda K. Nayak, and M. S. Ramachandra Rao. "Near Infrared Random Lasing in Multilayer MoS2." ACS Omega 3, no. 10 (October 25, 2018): 14097–102. http://dx.doi.org/10.1021/acsomega.8b01287.

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Das, Saptarshi, and Joerg Appenzeller. "Screening and interlayer coupling in multilayer MoS2." physica status solidi (RRL) - Rapid Research Letters 7, no. 4 (March 6, 2013): 268–73. http://dx.doi.org/10.1002/pssr.201307015.

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Journal articles on the topic 'MoS2 multilayers'

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