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Journal articles on the topic 'MOS-HEMT'

Author: Grafiati

Published: 25 January 2025

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1

Chen, Yuan-Ming, Hsien-Cheng Lin, Kuan-Wei Lee, and Yeong-Her Wang. "Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator." Materials 14, no. 4 (February 18, 2021): 970. http://dx.doi.org/10.3390/ma14040970.

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An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

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2

Mazumder, Soumen, Parthasarathi Pal, Kuan-Wei Lee, and Yeong-Her Wang. "Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT." Materials 15, no. 24 (December 19, 2022): 9067. http://dx.doi.org/10.3390/ma15249067.

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We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400 °C for 10 min. A remarkable reduction in the reverse gate leakage current (IG) up to 1.5×10−12 A/mm (@ VG = −12 V) was observed in the stack layer MOS-HEMT due to the combined treatment. The performance of the dual surface-treated MOS–HEMT was significantly improved, particularly in terms of hysteresis, gate leakage, and subthreshold characteristics, with optimized gate annealing treatment. In addition, an organized gate leakage conduction mechanism in the AlGaN/GaN MOS–HEMT with the Al2O3/SiO2 stack gate dielectric layer was investigated before and after gate annealing treatment and compared with the conventional Schottky gate. The conduction mechanism in the reverse gate bias was Poole–Frankel emission for the Schottky-gate HEMT and the MOS–HEMT before annealing. The dominant conduction mechanism was ohmic/Poole-Frankel at low/medium forward bias. Meanwhile, gate leakage was governed by the hopping conduction mechanism in the MOS–HEMT without gate annealing modulation at a higher forward bias. After post-gate annealing (PGA) treatment, however, the leakage conduction mechanism was dominated by trap-assisted tunneling at the low to medium forward bias region and by Fowler–Nordheim tunneling at the higher forward bias region. Moreover, a decent product of maximum oscillation frequency and gate length (fmax × LG) was found to reach 27.16 GHz∙µm for the stack layer MOS–HEMT with PGA modulation. The dual surface-treated Al2O3/SiO2 stack layer MOS–HEMT with PGA modulation exhibited decent performance with an IDMAX of 720 mA/mm, a peak extrinsic transconductance (GMMAX) of 120 mS/mm, a threshold voltage (VTH) of −4.8 V, a higher ION/IOFF ratio of approximately 1.2×109, a subthreshold swing of 82 mV/dec, and a cutoff frequency(ft)/maximum frequency of (fmax) of 7.5/13.58 GHz.

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3

Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (February 1, 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

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4

ALOMARI, M., F. MEDJDOUB, E. KOHN, M.-A. DI FORTE-POISSON, S. DELAGE, J. F. CARLIN, N. GRANDJEAN, and C. GAQUIÈRE. "InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 137–44. http://dx.doi.org/10.1142/s0129156409006187.

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We report on the investigation of lattice matched InAlN / GaN MOS-HEMT structures prepared by thermal oxidation at 800 °C in oxygen atmosphere for two minutes. The gate leakage current was reduced by two orders of magnitude. Pulse measurements showed lag effects similar to what is observed for devices without oxidation, indicating a high quality native oxide. The MOS-HEMT showed no degradation in the small signal characteristics and yielded a power density of 5 W/mm at 30 V drain voltage at 10 GHz, power added efficiency of 42% and Ft and Fmax of 42 and 61 GHz respectively, illustrating the capability of such MOS-HEMT to operate at high frequencies.

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5

Perina, Welder, Joao Martino, and Paula Agopian. "(Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region." ECS Transactions 111, no. 1 (May 19, 2023): 297–302. http://dx.doi.org/10.1149/11101.0297ecst.

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In this work, the Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) behavior in saturation region was analyzed and compared with a GaN MOSFET. The MIS-HEMT presents a current level about 30 times higher than GaN MOSFET, for the same bias conditions. The different saturation points (VDS sat) of the MOS and HEMT conductions is responsible for the appearance of a kink in the drain current (IDS) current as a function of drain voltage (VDS) curve. The output conductance (gD) of the MOSFET presented a strong dependence on VGT, while the MIS-HEMT only a slightly dependence was observed. The MIS-HEMT kink effect (MH kink) was defined by the drain voltage where the bump occurs. The MH kink only occurs for a high enough gate bias to enable the MOS conduction, and MH kink value increases with the gate voltage overdrive (VGT) and its variation tends to saturate for VGT higher than 3,5V.

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6

Yang, Shun-Kai, Soumen Mazumder, Zhan-Gao Wu, and Yeong-Her Wang. "Performance Enhancement in N2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Γ-Shaped Gate Engineering." Materials 14, no. 6 (March 21, 2021): 1534. http://dx.doi.org/10.3390/ma14061534.

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In this paper, we have demonstrated the optimized device performance in the Γ-shaped gate AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) by incorporating aluminum into atomic layer deposited (ALD) HfO2 and comparing it with the commonly used HfO2 gate dielectric with the N2 surface plasma treatment. The inclusion of Al in the HfO2 increased the crystalline temperature (~1000 °C) of hafnium aluminate (HfAlOX) and kept the material in the amorphous stage even at very high annealing temperature (>800 °C), which subsequently improved the device performance. The gate leakage current (IG) was significantly reduced with the increasing post deposition annealing (PDA) temperature from 300 to 600 °C in HfAlOX-based MOS-HEMT, compared to the HfO2-based device. In comparison with HfO2 gate dielectric, the interface state density (Dit) can be reduced significantly using HfAlOX due to the effective passivation of the dangling bond. The greater band offset of the HfAlOX than HfO2 reduces the tunneling current through the gate dielectric at room temperature (RT), which resulted in the lower IG in Γ-gate HfAlOX MOS-HEMT. Moreover, IG was reduced more than one order of magnitude in HfAlOX MOS-HEMT by the N2 surface plasma treatment, due to reduction of N2 vacancies which were created by ICP dry etching. The N2 plasma treated Γ-shaped gate HfAlOX-based MOS-HEMT exhibited a decent performance with IDMAX of 870 mA/mm, GMMAX of 118 mS/mm, threshold voltage (VTH) of −3.55 V, higher ION/IOFF ratio of approximately 1.8 × 109, subthreshold slope (SS) of 90 mV/dec, and a high VBR of 195 V with reduced gate leakage current of 1.3 × 10−10 A/mm.

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7

Huang, Cheng-Yu, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee, and Yeong-Her Wang. "Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics." Materials 15, no. 19 (October 5, 2022): 6895. http://dx.doi.org/10.3390/ma15196895.

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A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al2O3/ZrO2 stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance the stability after thermal stress or time stress. The MOS-HEMT has a maximum drain current density of 847 mA/mm and peak transconductance of 181 mS/mm. The corresponding subthreshold swing and on/off ratio are 95 mV/dec and 3.3 × 107. The gate leakage current can be reduced by three orders of magnitude due to the Al2O3/ZrO2 stacked layer, which also contributes to the lower flicker noise. The temperature-dependent degradation of drain current density is 26%, which is smaller than the 47% of reference HEMT. The variation of subthreshold characteristics caused by thermal or time stress is smaller than that of the reference case, showing the proposed Al2O3/ZrO2 stacked gate dielectrics are reliable for device applications.

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8

Mazumder, Soumen, Ssu-Hsien Li, Zhan-Gao Wu, and Yeong-Her Wang. "Combined Implications of UV/O3 Interface Modulation with HfSiOX Surface Passivation on AlGaN/AlN/GaN MOS-HEMT." Crystals 11, no. 2 (January 28, 2021): 136. http://dx.doi.org/10.3390/cryst11020136.

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Surface passivation is critically important to improve the current collapse and the overall device performance in metal-oxide semiconductor high-electron mobility transistors (MOS-HEMTs) and, thus, their reliability. In this paper, we demonstrate the surface passivation effects in AlGaN/AlN/GaN-based MOS-HEMTs using ultraviolet-ozone (UV/O3) plasma treatment prior to SiO2 -gate dielectric deposition. X-ray photoelectron spectroscopy (XPS) was used to verify the improved passivation of the GaN surface. The threshold voltage (VTH) of the MOS-HEMT was shifted towards positive due to the band bending at the SiO2/GaN interface by UV/O3 surface treatment. In addition, the device performance, especially the current collapse, hysteresis, and 1/f characteristics, was further significantly improved with an additional 15 nm thick hafnium silicate (HfSiOX) passivation layer after the gate metallization. Due to combined effects of the UV/O3 plasma treatment and HfSiOX surface passivation, the magnitude of the interface trap density was effectively reduced, which further improved the current collapse significantly in SiO2-MOS-HEMT to 0.6% from 10%. The UV/O3-surface-modified, HfSiOX-passivated MOS-HEMT exhibited a decent performance, with IDMAX of 655 mA/mm, GMMAX of 116 mS/mm, higher ION/IOFF ratio of approximately 107, and subthreshold swing of 85 mV/dec with significantly reduced gate leakage current (IG) of 9.1 ×10−10 A/mm.

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9

Driss Bouguenna, Abbès Beloufa, Khaled Hebali, and Sajad Ahmad Loan. "Investigation of the Electrical Characteristics of AlGaN/AlN/GaN Heterostructure MOS-HEMTs with TiO2 High-k Gate Insulator." International Journal of Nanoelectronics and Materials (IJNeaM) 16, no. 3 (October 22, 2024): 607–20. http://dx.doi.org/10.58915/ijneam.v16i3.1325.

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This paper investigates the impact of TiO2 high-k gate insulator on the electrical characteristics of AlGaN/AlN/GaN MOS-HEMT transistors using MATLAB and Atlas-TCAD simulation software. The physical analytical model of the MOS-HEMTs is used for simulation from Al2O3, HfO2, and TiO2 as the gate dielectric materials, which provide higher performance and reliability of the MOS-HEMT devices. The device shows a good improvement in its result of the DC and AC characteristics with different permittivity of insulator materials. Thus, the DC and AC performance of GaN MOS-HEMTs is higher than with other insulators, such as Al2O3 and HfO2 by using TiO2 as the gate dielectric. Moreover, the simulation results proved that TiO2 is the better gate dielectric material to enhance the electrical reliability of the power switching devices for high-temperature applications such as electric automobiles.

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10

Cho, Seong-Kun, and Won-Ju Cho. "High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor." Chemosensors 9, no. 3 (February 25, 2021): 42. http://dx.doi.org/10.3390/chemosensors9030042.

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The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on a coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron mobility transistor (HEMT) using the resistive coupling effect to overcome the Nernst limit. For resistive coupling, a coplanar gate comprising a control gate (CG) and a sensing gate (SG) was designed. We investigated the amplification of the pH sensitivity with the change in the magnitude of a resistance connected in series to each CG and SG via Silvaco TCAD simulations. In addition, a disposable extended gate was applied as a cost-effective sensor platform that helped prevent damages due to direct exposure of the AlGaN/GaN MOS HEMT to chemical solutions. The pH sensor based on the coplanar gate AlGaN/GaN MOS HEMT exhibited a pH sensitivity considerably higher than the Nernst limit, dependent on the ratio of the series resistance connected to the CG and SG, as well as excellent reliability and stability with non-ideal behavior. The pH sensor developed in this study is expected to be readily integrated with wide transmission bandwidth, high temperature, and high-power electronics as a highly sensitive biosensor platform.

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11

Pérez-Tomás, A., and A. Fontserè. "AlGaN/GaN hybrid MOS-HEMT analytical mobility model." Solid-State Electronics 56, no. 1 (February 2011): 201–6. http://dx.doi.org/10.1016/j.sse.2010.11.016.

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12

Racko, Juraj, Tibor Lalinský, Miroslav Mikolášek, Peter Benko, Sebastian Thiele, Frank Schwierz, and Juraj Breza. "Vertical current transport processes in MOS-HEMT heterostructures." Applied Surface Science 527 (October 2020): 146605. http://dx.doi.org/10.1016/j.apsusc.2020.146605.

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13

Lin, Yu-Shyan, and Heng-Wei Wang. "AlGaN/AlN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor with Annealed Al₂O₃ Gate Dielectric." Science of Advanced Materials 14, no. 8 (August 1, 2022): 1419–22. http://dx.doi.org/10.1166/sam.2022.4343.

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An AlGaN/AlN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMT) with an Al2O3 insulator is studied. The post-deposition annealing (PDA) of Al2O3 is conducted. The effects of PDA in an N2 atmosphere on the performance of the MOS-HEMTs are studied. Experimental results demonstrate that the trap density in the Al2O3 MOS diode is significantly decreased by annealing. Adding annealed Al2O3 as a surface passivation and a gate oxide layer on HEMTs reduces gate leakage currents, increases the two-terminal reverse breakdown voltage, and improves the high-frequency performance of the HEMTs.

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14

Adak, Sarosij, Sanjit Kumar Swain, Hemant Pardeshi, Hafizur Rahaman, and Chandan Kumar Sarkar. "Effect of Barrier Thickness on Linearity of Underlap AlInN/GaN DG-MOSHEMTs." Nano 12, no. 01 (January 2017): 1750009. http://dx.doi.org/10.1142/s1793292017500096.

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In this proposed work, an extensive study on the linearity performance of underlap AlInN/GaN double gate metal oxide semiconductor high electron mobility transistors (MOS-HEMT) has been analyzed using 2D Sentaurus TCAD simulation. Specifically a brief comparison is made on the linearity and intermodulation distortion characteristics of the proposed device due to variation of barrier layer thickness from 2 nm to 6 nm. Various parameters such as transconductance ([Formula: see text], second-order transconductance ([Formula: see text]), third-order transconductance ([Formula: see text]), second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), third-order input intercept point (IIP3) and third-order intermodulation distortion (IMD3) of underlap AlInN/GaN double gate metal oxide semiconductor high electron mobility transistors (MOS-HEMT) are discussed. The simulated results obtained confirms that by careful optimization of barrier layer thickness linearity characteristics of this proposed device can be improved, which can be suitable for analog and circuit applications.

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15

Chen, P. G., H. H. Chen, M. Tang, and Min Hung Lee. "Enhancement-Mode GaN MOS-HEMT with Quaternary InAlGaN-Barrier." Applied Mechanics and Materials 870 (September 2017): 389–94. http://dx.doi.org/10.4028/www.scientific.net/amm.870.389.

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The quaternary InAlGaN-barrier GaN MOS-HEMT (high-electron-mobility transistor) with enhancement mode operation was displayed as Vth=0.65V and the maximum drain current ~ 40 mA/mm at VDS=10V with LG=15μm and LGD=20μm. The measured rocking-curve and RSM (reciprocal space mapping) for epitaxial quality was confirmed the composition of the quaternary and analyzed the relaxation between InAlGaN-barrier and GaN Buffer layer. The surface roughness of InAlGaN was observed by AFM (Atomic force microscopy). The positive polarity of Vth was obtained with the gate lengths 3-30μm, and short channel effect was discussed.

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16

Chong, Wang, Ma Xiaohua, Feng Qian, Hao Yue, Zhang Jincheng, and Mao Wei. "Development and characteristics analysis of recessed-gate MOS HEMT." Journal of Semiconductors 30, no. 5 (April 29, 2009): 054002. http://dx.doi.org/10.1088/1674-4926/30/5/054002.

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17

Chyurlia, P., H. Tang, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, and N. G. Tarr. "GaN HEMT and MOS monolithic integration on silicon substrates." physica status solidi (c) 8, no. 7-8 (June 9, 2011): 2210–12. http://dx.doi.org/10.1002/pssc.201000914.

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18

OZAKI, Shiro. "サブテラヘルツ帯パワーアンプ向けInP系MOS-HEMT." Journal of The Institute of Electrical Engineers of Japan 144, no. 6 (June 1, 2024): 335–38. http://dx.doi.org/10.1541/ieejjournal.144.335.

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19

Khan, A. B., M. Sharma, M. J. Siddiqui, and S. G. Anjum. "Examine and Interpreting the RF and DC Characteristics of AlGaN/GaN HEMT and MOS-HEMT." Advanced Science, Engineering and Medicine 9, no. 4 (April 1, 2017): 282–86. http://dx.doi.org/10.1166/asem.2017.2010.

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20

Perina, Welder, Joao Martino, and Paula Agopian. "(Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region." ECS Meeting Abstracts MA2023-01, no. 33 (August 28, 2023): 1873. http://dx.doi.org/10.1149/ma2023-01331873mtgabs.

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The High Electron Mobility Transistor (HEMT) has been widely used in the field of power electronics and high frequency operation since 1983 (1), while presenting a simple circuit design for analog applications (2, 3), and for extreme harsh environments as well (3, 4). However, HEMTs presents a problem with gate leakage and current collapse which can be solved by introducing an insulator between the gate and semiconductor while maintaining the high performance, hence the Metal Insulator Semiconductor High Electron Mobility Transistor (MIS-HEMT) appears as a solution. The AlGaN/GaN heterostructures forms, at the interface, a sheet with high electron density (2DEG – 2 Dimension Electron Gas), which also presents a high electron mobility. The MIS structure presents a well know conduction between source and drain. As a result, the MIS-HEMT device presents multiple conductions. The focus of this work is to study how the multiple conductions of the MIS-HEMT impact on the output characteristics. The studied devices are, a MIS-HEMT with the gate insulator composed of a 2 nm Si3N4, and a GaN MOSFET of 25 nm of Al2O3 as the gate insulator, both devices were fabricated at imec Leuven – Belgium, and have the same dimensions: gate width of 5 µm and gate length of 600 nm. Their respective schematics are presented at figure 1. The drain current (IDS) as a function of drain voltage (VDS) for a MIS-HEMT (left) and GaN MOSFET (right) with multiple overdrive voltage (VGT) is presented in figure 2. The VDS ranges for these devices are different because they have different saturation points, although it is possible to notice that the MIS-HEMT shows greater current drive when compared to MOSFET considering the same VDS, which is likely due to the formation of the 2DEG as the main conducting mechanism in the MIS-HEMT. Previous works (5 – 8) showed that the MIS-HEMT have multiple conduction mechanisms dependent on VGT, and figure 3 shows the effect of those multiple conductions on the output current of the device where it is very likely that one of those conductions have different VDS sat. It is possible to notice higher values of IDS with increasing VGT, as expected. However, for high enough VGT, there is an anomalous IDS increase (kink) in the saturation region, that occurs due to the different conduction mechanism (MOS and HEMT conductions). This effect will be called as MIS-HEMT kink effect (MH kink effect). This MH Kink effect occurs when the HEMT conduction mechanism overcomes the MOS conduction. The output conductance (gD) as a function of VDS for the MOSFET is presented in figure 4. Figure 5 shows gD as a function of VDS for multiple VGT for the MIS-HEMT, where it is possible to see a peak in the gD (in saturation region) shifting to the right for increasing VGT, caused by the MH kink effect. In order to better visualize, the VDS value for which the MH kink takes place, it is plotted as a function of VGT in figure 6. It is possible to see that as VGT increases, the MK kink effect shifts for higher VDS values, thanks to the higher electron density in 2DEG making the HEMT conduction less dependent on VDS. Figure 1

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21

Ye, P. D., B. Yang, K. K. Ng, J. Bude, G. D. Wilk, S. Halder, and J. C. M. Hwang. "GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al2O3 AS GATE DIELECTRIC AND SURFACE PASSIVATION." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 791–96. http://dx.doi.org/10.1142/s0129156404002843.

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We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al 2 O 3 film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT of the same design, six order of magnitude smaller gate leakage current and tripled drain current at forward gate bias demonstrate the effectiveness of ALD Al 2 O 3 as a gate dielectric. The high transconductance and high effective two-dimensional electron mobility verify the high-quality of Al 2 O 3/ AlGaN interface with low interface trap density. The Al 2 O 3 passivation effect is also studied by sheet resistance measurement and short pulse drain characterization.

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22

Nanjo, Takuma, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, and Naruhisa Miura. "Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer." Japanese Journal of Applied Physics 61, SC (February 9, 2022): SC1015. http://dx.doi.org/10.35848/1347-4065/ac3dca.

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Abstract An extrinsic electron induced by a dielectric (EID) AlGaN/GaN MOS high-electron-mobility transistor (HEMT) on Si substrate was designed and investigated. The EID structure with SiO2 deposition and subsequent high-temperature annealing, which induces two-dimensional electron gases (2DEGs) on fully depleted AlGaN/GaN hetero-epitaxial layers with thin AlGaN barrier layer, was applied to access and drift regions in the HEMT. The fabricated HEMT exhibited enhancement-mode operation with a specific on-resistance of 7.6 mΩ cm2 and a breakdown voltage of over 1 kV. In addition, electron state analysis using hard X-ray photoelectron spectroscopy revealed that changes in the chemical states of Al and energy level lowering at the SiO2/AlGaN interface affect the induction of 2DEG in the EID structure. The proposed HEMTs should become a strong candidate for highly reliable high-power switching devices due to the damage-less fabrication without dry etching or fluorine plasma exposure processes on the semiconductor layers.

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23

Taking, S., D. MacFarlane, and E. Wasige. "AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results." Active and Passive Electronic Components 2011 (2011): 1–7. http://dx.doi.org/10.1155/2011/821305.

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Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

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24

Acurio, E., F. Crupi, P. Magnone, L. Trojman, G. Meneghesso, and F. Iucolano. "On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT." Solid-State Electronics 132 (June 2017): 49–56. http://dx.doi.org/10.1016/j.sse.2017.03.007.

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25

Pardeshi, Hemant. "Analog/RF performance of AlInN/GaN underlap DG MOS-HEMT." Superlattices and Microstructures 88 (December 2015): 508–17. http://dx.doi.org/10.1016/j.spmi.2015.10.009.

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26

Khediri, Abdelkrim, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, and Ali Soltani. "Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT." Micromachines 12, no. 11 (October 21, 2021): 1284. http://dx.doi.org/10.3390/mi12111284.

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In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the premature off-state breakdown is pointed out. Vertical leakage in lateral GaN devices significantly contributes to the off-state breakdown at high blocking voltages. The parasitic current path leads to premature breakdown before the appearance of avalanche or dielectric breakdown. A comparative study between a MOS-HEMT GaN on a silicon substrate with and without a SiNx interlayer at the AlN/Silicon substrate interface is presented here. We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.

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27

Perina, Welder Fernandes, Joao Antonio Martino, Eddy Simoen, Uthayasankaran Peralagu, Nadine Collaert, and Paula Ghedini Der Agopian. "Effect of multiple conductions on basic parameters in linear and saturation regions for a MIS-HEMT from 450 K down to 200 K." Journal of Integrated Circuits and Systems 19, no. 2 (August 1, 2024): 1–5. http://dx.doi.org/10.29292/jics.v19i2.812.

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In this work, the effect of multiple conductions on the basic parameters in linear and saturation regions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT), when operating in a temperature range from 450 K down to 200 K, is evaluated experimentally. The threshold voltage behavior suggests that the HEMT conduction is dominating the device for low temperatures, while the MOS conduction is the dominant one for high temperatures. It is also shown that the presence of a high gate leakage current is degrading the switching efficiency and the ION/IOFF ratio of the device. The device presents a minimum Drain Induced Barrier Lowering (DIBL) of 27 mV/V (at 300 K) and the maximum of 62 mV/V (at 450 K).

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Liu Lin-Jie, Yue Yuan-Zheng, Zhang Jin-Cheng, Ma Xiao-Hua, Dong Zuo-Dian, and Hao Yue. "Temperature characteristics of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric." Acta Physica Sinica 58, no. 1 (2009): 536. http://dx.doi.org/10.7498/aps.58.536.

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29

Freedsman, Joseph J., Arata Watanabe, Tatsuya Ito, and Takashi Egawa. "Recessed gate normally-OFF Al2O3/InAlN/GaN MOS-HEMT on silicon." Applied Physics Express 7, no. 10 (September 12, 2014): 104101. http://dx.doi.org/10.7567/apex.7.104101.

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Fiorenza, Patrick, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, and Fabrizio Roccaforte. "Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2as Gate Insulator." IEEE Transactions on Electron Devices 64, no. 7 (July 2017): 2893–99. http://dx.doi.org/10.1109/ted.2017.2699786.

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Brown, Raphael, Douglas Macfarlane, Abdullah Al-Khalidi, Xu Li, Gary Ternent, Haiping Zhou, Iain Thayne, and Edward Wasige. "A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT." IEEE Electron Device Letters 35, no. 9 (September 2014): 906–8. http://dx.doi.org/10.1109/led.2014.2334394.

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32

Pal, Praveen, Yogesh Pratap, Mridula Gupta, and Sneha Kabra. "Modeling and Simulation of AlGaN/GaN MOS-HEMT for Biosensor Applications." IEEE Sensors Journal 19, no. 2 (January 15, 2019): 587–93. http://dx.doi.org/10.1109/jsen.2018.2878243.

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33

Chang, C. T., T. H. Hsu, E. Y. Chang, Y. C. Chen, H. D. Trinh, and K. J. Chen. "Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage." Electronics Letters 46, no. 18 (2010): 1280. http://dx.doi.org/10.1049/el.2010.1939.

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34

Hassan, M. S., Tanemasa Asano, Masahito Shoyama, and Gamal M. Dousoky. "Performance Investigation of Power Inverter Components Submersed in Subcooled Liquid Nitrogen for Electric Aircraft." Electronics 11, no. 5 (March 7, 2022): 826. http://dx.doi.org/10.3390/electronics11050826.

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Investigating the performance of power electronics devices and thus power inverters at cryogenic temperatures for electric aircraft systems are of great interest. Accordingly, the purpose of this study is to examine the inverter circuit technologies used in cryogenically-cooled electric aircraft applications from three perspectives: inverter topologies, power capabilities, and electromagnetic interference (EMI) that may occur. At a cryogenic temperature, the characteristics of five power semiconductor switches with different technologies (Si MOS, SiC MOS, and GaN HEMT) used in cryogenically-cooled electric aircraft inverters were tested and the results were presented. Furthermore, the low-temperature performance of three types of capacitors commonly used in power electronics inverters was investigated. The research findings provide crucial considerations for the research and development of power inverters cooled by sub-cooled liquid nitrogen for modern electric aircraft.

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35

Hasan, Md Rezaul, Abhishek Motayed, Md Shamiul Fahad, and Mulpuri V. Rao. "Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, no. 5 (September 2017): 052202. http://dx.doi.org/10.1116/1.4998937.

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36

Chéron, Jérôme, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, Michel Stanislawiak, Philippe Eudeline, and Didier Floriot. "Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band." International Journal of Microwave and Wireless Technologies 4, no. 5 (July 16, 2012): 495–503. http://dx.doi.org/10.1017/s1759078712000530.

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The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility transistor (HEMT) associating a nonlinear model of the GaN HEMT die with an equivalent circuit model of the package. The extraction procedure is based on multi-bias S-parameter measurements of both packaged and unpackaged (on-wafer) configurations. Two different designs of 20 W packaged GaN HEMTs illustrate the modeling approach that is validated by time-domain load-pull measurements in S-band. The advantage of the electrical modeling dedicated to packaged GaN HEMTs is to enable a die-package co-design for power matching. Internal matching elements such as Metal oxide semiconductor (MOS) capacitors, Monolithic microwave integrated circuits (MMICs), and bond wires can be separately modeled to ensure an efficient optimization of the package for high power Radio frequency (RF) applications.

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Canales, Bruno, and Paula Agopian. "MISHEMT’s multiple conduction channels influence on its DC parameters." Journal of Integrated Circuits and Systems 18, no. 1 (May 22, 2023): 1–5. http://dx.doi.org/10.29292/jics.v18i1.662.

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The Si3N4/ AlGaN/ AlN/ GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) analog performance was ascertained considering the device’s multiple channels. MISHEMTs with different gate lengths, source/drain electrodes depths, source/drain distances to the gate electrode and AlGaN aluminum molar fractions were analyzed. The total drain current has 3 different components, where one of them is related to MOS conduction and the other two are related to HEMT conduction. Due to their different transport mechanism and distance to the gate electrode, each channel conduction exhibits different threshold voltages, causing unusual transfer and output characteristics, such as transconductance multiple slopes and a steady output resistance. As a result, the MISHEMTs presents an unexpected increase in intrinsic voltage gain (Av) for high gate bias (strong conduction). The HEMT conduction and the conduction through all the AlGaN volume are responsible for sustaining drain current levels so high that it affects the Early voltage more strongly than the degradation of output conductance, ensuring a high Av values.

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Shi, Yijun, Wanjun Chen, Ruize Sun, Chao Liu, Yun Xia, Yajie Xin, Xiaorui Xu, et al. "An Extraction Method for the Interface Acceptor Distribution of GaN MOS-HEMT." IEEE Transactions on Electron Devices 66, no. 10 (October 2019): 4164–69. http://dx.doi.org/10.1109/ted.2019.2936509.

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39

Subash, T. D., T. Gnanasekaran, and P. Deepthi Nair. "Analytical modeling of AlInSb/InSb MOS gate HEMT structure with improved performance." International Journal of Modeling, Simulation, and Scientific Computing 07, no. 03 (August 23, 2016): 1672001. http://dx.doi.org/10.1142/s1793962316720016.

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The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad simulation. As the heterojunctions are having more advantageous properties that is a real support for so many application such as solar cells, semiconductor cells and transistors. Special properties of semiconductors are discussed here with various parameters that are depending up on the performance of accurate device [Pardeshi H., Pati S. K., Raj G., Mohankumar N., Sarkar C. K., J. Semicond. 33(12):124001-1–124001-7, 2012]. The maximum drain current density is achieved with improving the density of two-dimensional electron gas (2DEG) and with high velocity. High electron mobility transistor (HEMT) structure is used with the different combinations of layers which have different bandgaps. Parameters such as electron mobility, bandgap, dielectric constant, etc., are considered differently for each layer [Zhang A., Zhang L., Tang Z., IEEE Trans. Electron Devices 61(3):755–761, 2014]. The high electron mobility electrons are now widely used in so many applications. The proposed work of AlInSb/InSb heterostructure implements the same process which will be a promise for future research works.

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Liu, Han-Yin, Bo-Yi Chou, Wei-Chou Hsu, Ching-Sung Lee, Jinn-Kong Sheu, and Chiu-Sheng Ho. "Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique." IEEE Transactions on Electron Devices 60, no. 1 (January 2013): 213–20. http://dx.doi.org/10.1109/ted.2012.2227325.

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41

ZHAO Yong-bing, 赵勇兵, 张. 韵. ZHANG Yun, 程. 哲. CHENG Zhe, 黄宇亮 HUANG Yu-liang, 张. 连. ZHANG Lian, 刘志强 LIU Zhi-qiang, 伊晓燕 YI Xiao-yan, 王国宏 WANG Guo-hong, and 李晋闽 LI Jin-min. "Al2O3/AlGaN/GaN MOS-HEMT with High On/Off Drain Current Ratio." Chinese Journal of Luminescence 37, no. 5 (2016): 578–82. http://dx.doi.org/10.3788/fgxb20163705.0578.

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42

Wei, Jin, Jiacheng Lei, Xi Tang, Baikui Li, Shenghou Liu, and Kevin J. Chen. "Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT." IEEE Electron Device Letters 39, no. 1 (January 2018): 59–62. http://dx.doi.org/10.1109/led.2017.2771354.

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43

Yeom, Min Jae, Jeong Yong Yang, Chan Ho Lee, Junseok Heo, Roy Byung Kyu Chung, and Geonwook Yoo. "Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric." Micromachines 12, no. 12 (November 25, 2021): 1441. http://dx.doi.org/10.3390/mi12121441.

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AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal treatment of HfO2 gate dielectric, however, is known to degrade the oxide/nitride interface due to the formation of Ga-containing oxide. In this work, the undoped HfO2 gate dielectric was spike-annealed at 600 °C after the film was deposited by atomic layer deposition to improve the ferroelectricity without degrading the interface. As a result, the subthreshold slope of AlGaN/GaN MOS-HEMTs close to 60 mV/dec and on/off ratio>109 were achieved. These results suggest optimizing the HfO2/nitride interface can be a critical step towards a low-loss high-power switching device.

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44

Chakroun, Ahmed, Abdelatif Jaouad, Ali Soltani, Osvaldo Arenas, Vincent Aimez, Richard Ares, and Hassan Maher. "AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process." IEEE Electron Device Letters 38, no. 6 (June 2017): 779–82. http://dx.doi.org/10.1109/led.2017.2696946.

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Panda, Deepak Kumar, and Trupti Ranjan Lenka. "Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology." Micro & Nano Letters 14, no. 6 (May 2019): 618–22. http://dx.doi.org/10.1049/mnl.2018.5499.

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46

Chou, Bo-Yi, Wei-Chou Hsu, Han-Yin Liu, Ching-Sung Lee, Yu-Sheng Wu, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu, and Meng-Hsueh Chiang. "Investigations of AlGaN/GaN MOS-HEMT with Al2O3deposition by ultrasonic spray pyrolysis method." Semiconductor Science and Technology 30, no. 1 (December 5, 2014): 015009. http://dx.doi.org/10.1088/0268-1242/30/1/015009.

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47

Taube, Andrzej, Mariusz Sochacki, Jan Szmidt, Eliana Kaminska, and Anna Piotrowska. "Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs." International Journal of Electronics and Telecommunications 60, no. 3 (October 28, 2014): 253–58. http://dx.doi.org/10.2478/eletel-2014-0032.

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Abstract The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-k dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10−6 A/mm can be achieved for the acceptor dopant concentration at the level of 5 X 1015 cm−3. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.

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48

Lin, Y. C., J. S. Niu, W. C. Liu, and J. H. Tsai. "Investigation of Pd|HfO-=SUB=-2-=/SUB=-|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches." Журнал технической физики 54, no. 7 (2020): 684. http://dx.doi.org/10.21883/ftp.2020.07.49516.9370.

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A new Pd|HfO2|AlGaN|GaN metal-oxide-semiconductor (MOS) enhancement-mode high electron mobility transistor (HEMT) is fabricated with low-temperature sensitization, activation, electroless-plating, and two-step gate-recess approaches. Experimentally, a high positive threshold voltage Vth of 1.96 V, a very low gate leakage IG of 6.3·10-8 mA/mm, a high maximum extrinsic transconductance gm,max of 75.3 mS/mm, a high maximum drain saturation current ID,max of 266.9 mA/mm, and a high ON/OFF current ratio of 7.6·107 are obtained at 300 K. Moreover, the related temperature-dependent characteristics, over temperature ranges from 300 to 500 K, are comprehensively studied. The very low temperature coefficients on gate current, drain saturation current, transconductance, and threshold voltage confirm the thermal-stable capability of the studied device. Therefore, based on these advantages, the studied Pd|HfO2|AlGaN|GaN MOS structure is suitable for the development of high-performance HEMTs. Keywords: HfO2, AlGaN|GaN, metal-oxide-semiconductor, high electron mobility transistor, electroless plating, gate recess, threshold voltage.

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Pal, Praveen, Yogesh Pratap, Mridula Gupta, and Sneha Kabra. "Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor." IEEE Sensors Journal 21, no. 12 (June 15, 2021): 12998–3005. http://dx.doi.org/10.1109/jsen.2021.3069243.

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Khan, Aboo Bakar. "Influence of back barrier layer thickness on device performance of AlGaN/GaN MOS-HEMT." Advanced Materials Proceedings 3, no. 7 (July 1, 2018): 480–84. http://dx.doi.org/10.5185/amp.2018/7000.

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