Academic literature on the topic 'Monte-Charge'

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Dissertations / Theses on the topic "Monte-Charge"

1

Aung, Pyie Phyo. "Monte Carlo Simulations of charge Transport in Organic Semiconductors." University of Akron / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=akron1418272111.

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2

Jakobsson, Mattias. "Monte Carlo Studies of Charge Transport Below the Mobility Edge." Doctoral thesis, Linköpings universitet, Beräkningsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74322.

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Charge transport below the mobility edge, where the charge carriers are hopping between localized electronic states, is the dominant charge transport mechanism in a wide range of disordered materials. This type of incoherent charge transport is fundamentally different from the coherent charge transport in ordered crystalline materials. With the advent of organic electronics, where small organic molecules or polymers replace traditional inorganic semiconductors, the interest for this type of hopping charge transport has increased greatly. The work documented in this thesis has been dedicated to
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3

Krapohl, David. "Monte Carlo and Charge Transport Simulation of Pixel Detector Systems." Doctoral thesis, Mittuniversitetet, Avdelningen för elektronikkonstruktion, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-24763.

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This thesis is about simulation of semiconductor X-ray and particledetectors. The simulation of a novel coating for solid state neutrondetectors is discussed as well as the implementation of a simulationframework for hybrid pixel detectors.Today’s most common thermal neutron detectors are proportionalcounters, that use 3He gas in large tubes or multi wire arrays. Globalnuclear disarmament and the increase in use for homeland securityapplications has created a shortage of the gas which poses a problemfor neutron spallation sources that require higher resolution and largersensors. In this thesis
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4

Coco, Marco. "Monte Carlo study of charge and phonon transport in graphene." Doctoral thesis, Università di Catania, 2017. http://hdl.handle.net/10761/3811.

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In this thesis, we investigate charge transport in graphene. Graphene is one of the most important new materials with a wide range of properties, rarely together in the same material, and it is the ideal candidate for future electronic devices. The dynamics of electrons in the conduction band is analyzed, by considering values of Fermi levels high enough to neglect the dynamics in the valence band. This is equivalent to a n-type doping for traditional semiconductors. Degeneracy effects are very important in graphene and then it becomes mandatory to consistently include the Pauli exclusion pri
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5

Volpi, Riccardo. "Charge Transport Simulations for Organic Electronics : A Kinetic Monte Carlo Approach." Licentiate thesis, Linköpings universitet, Teoretisk kemi, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-122991.

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In this thesis we focus on the modelling and simulation of organic electronic devices, investigating their structural and electronic properties. Organic devices have attracted great interest for their innovative properties, but their functioning still represent a theoretical and technological challenge. They are composed by one or more organic materials depending on the particular application. The morphology of organic devices in the single phase or at the interface is known to strongly determine mobility and efficiency of the devices. The structural disorder is studied through molecular dynam
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6

Gonçalves, Thomas. "Contributions à la parallélisation de méthodes de type transport Monte-Carlo." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAM047/document.

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Les applications de transport de particules Monte-Carlo consistent à étudier le comportement de particules se déplaçant dans un domaine de simulation. La répartition des particules sur le domaine de simulation n'est pas uniforme et évolue dynamiquement au cours de la simulation. La parallélisation de ce type d'applications sur des architectures massivement parallèles amène à résoudre une problématique complexe de répartition de charges de calculs et de données sur un grand nombre de cœurs de calcul.Nous avons d'abord identifié les difficultés de parallélisation des applications de transport de
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7

Hjelm, Mats. "Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3700.

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<p>The importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. A wide range of simulation methods exists, andthe method used in each case is selected according to therequirements of the work performed. For simulations of newsemiconductor materials, extremely small devices, or deviceswhere non-equilibrium transport is important, the Monte Carlo(MC) me
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8

Islam, Sharnali. "ATOMISTIC MODELING OF UNINTENTIONAL SINGLE CHARGE EFFECTS IN NANOSCALE FETS." OpenSIUC, 2010. https://opensiuc.lib.siu.edu/theses/209.

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Numerical simulations have been performed to study the single-charge-induced ON current fluctuations (random telegraphic noise) in conventional (MOSFET) and non-conventional (silicon nanowire) nanoscale field-effect transistors. A semi-classical three-dimensional particle-based Monte Carlo device simulator (MCDS 3-D) has been integrated and used in this work. Quantum mechanical space-quantization effects have been accounted for via a parameter-free effective potential scheme that has been proved quite successful in describing charge set back from the interface and quantization of the energy (
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9

Gali, Sai Manoj. "Modélisation des relations structure / propriétés de transport de charge dans les matériaux pour l'électronique organique." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0693/document.

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Les avancées technologiques et l'intégration massive de dispositifs électroniques nanométriques dans les objets de notre vie quotidienne ont généré une explosion des coûts de R&amp;D, de conception et de production, ainsi que des inquiétudes sociétales quant à l'impact environnemental des déchets électroniques. En raison de procédés de production moins coûteux et à faible impact environnemental, de leur souplesse d’utilisation et de la possibilité de moduler leurs propriétés à l’infini, les molécules et polymères organiques constituent une classe de matériaux prometteuse pour la mise au point
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10

Renoud, Raphaël. "Simulation par la méthode de Monte-Carlo de la charge d'un isolant soumis au bombardement d'un faisceau électronique focalisé." Lyon 1, 1995. http://www.theses.fr/1995LYO10029.

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La caracterisation des materiaux isolants (par exemple par la methode du miroir) passe par une connaissance approfondie de la physique de la charge d'espace. La distribution des charges, la forme du potentiel et du champ electrostatique, ainsi que les rendements de l'emission secondaire, sont autant d'indicateurs essentiels pour apprecier la tenue dielectrique d'un materiau soumis a une contrainte (electrique, mecanique, thermique,). Dans ce cadre, nous simulons le bombardement d'un echantillon isolant par un faisceau electronique tel qu'on le realise dans un microscope electronique a balayage
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