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Journal articles on the topic 'Molybdenum Ditelluride'

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Author: Grafiati
Published: 10 December 2022
Last updated: 7 September 2023

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1

Bernède, J. C., M. Kettaf, A. Khelil, and M. Spiesser. "p-n junctions in molybdenum ditelluride." Physica Status Solidi (a) 157, no. 1 (September 16, 1996): 205–9. http://dx.doi.org/10.1002/pssa.2211570126.

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2

Wu, Man, and Ying Li. "Passively Q-Switched Erbium-Doped Fiber Laser via Evanescent Field Interaction with Few-Layer Molybdenum Ditelluride." Advances in Condensed Matter Physics 2018 (October 1, 2018): 1–5. http://dx.doi.org/10.1155/2018/9239371.

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We demonstrate an all-fiberized passively Q-switched erbium-doped fiber laser (EDFL) via evanescent field interaction between molybdenum ditelluride saturable absorber (SA) and guided mode of the D-shaped fiber. By integrating the few-layer molybdenum ditelluride prepared by CVD method onto the side-polished fiber, the SA can be realized by the strong interaction between the evanescent field of the waveguide and the nonlinear optical material. The proposed passively Q-switched EDFL could deliver output pulses at 1566 nm wavelength with pulse width of 5.03 μs, a repetition rate of 13.9 kHz, a pulse energy of 150.6 nJ, and an output power of 2.1 mW when pumped by a 980 nm laser diode of 180 mW.
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3

Castro Arata R. A., Khachaturov S. E., Kononov A. A., and Anisimova. N. I. "Study of relaxers distribution in thin layers of amorphous MoTe-=SUB=-2-=/SUB=-." Physics of the Solid State 63, no. 13 (2022): 1717. http://dx.doi.org/10.21883/pss.2022.13.52311.165.

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Recently, transition metal dichalcogenides have come into the spotlight after they have been found to become direct semiconductor in the monolayer level. The paper presents the results of the study of the relaxers distribution in layers of amorphous molybdenum ditelluride obtained by high-frequency magnetron sputtering. According to the obtained values of relaxation parameters α and β, the transition from an asymmetric distribution to a symmetric distribution of relaxators at temperature T=283 K can be stated. The existence of maxima on the temperature dependence of relaxation times taumax=f(T) was found, which can be associated with phase transitions in the studied system. Keywords: molybdenum ditelluride, relaxers distribution, thin layers, phase transitions.
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4

Anand, T. Joseph Sahaya, and Nor Hamizah Mazlan. "Electro Synthesized MoTe2 Thin Films and their Semiconductor Studies towards Photoelectrochemical Cell." Advanced Materials Research 845 (December 2013): 392–97. http://dx.doi.org/10.4028/www.scientific.net/amr.845.392.

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Transition metal chalcogenide molybdenum ditelluride (MoTe2) thin films have been electrosynthesized cathodically on indium tin oxide-coated (ITO) conducting glass substrates from ammonaical solution of H2MoO4 and TeO2. The electrode potential was varied while the bath temperature was maintained at 40±1 oC and deposition time of 30 minutes. Highly textured MoTe2 films with polycrystalline nature are observed by X-ray diffraction analysis. Compositional analysis by EDX gives their stoichiometric relationships. Scanning electron microscope (SEM) was used to study surface morphology and shows that the films are smooth, uniform and useful for device fabrication. The optical absorption spectra showed that the material has an indirect band-gap value of 1.91-2.04 eV with different electrode potential. Besides, the film exhibited p-type semiconductor behavior. Keywords: Molybdenum ditelluride; Thin films; Electrodepositon; Solar cell;
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5

Onofrio, Nicolas, David Guzman, and Alejandro Strachan. "The dynamics of copper intercalated molybdenum ditelluride." Journal of Chemical Physics 145, no. 19 (November 21, 2016): 194702. http://dx.doi.org/10.1063/1.4967808.

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6

Watanabe, Tsuneo, and Akinari Kasai. "Hall Mobility in n-Type Molybdenum Ditelluride." Journal of the Physical Society of Japan 54, no. 7 (July 15, 1985): 2666–70. http://dx.doi.org/10.1143/jpsj.54.2666.

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7

Kettaf, M., A. Conan, A. Bonnet, and J. C. Bernede. "Electrical properties of molybdenum ditelluride thin films." Journal of Physics and Chemistry of Solids 51, no. 4 (January 1990): 333–41. http://dx.doi.org/10.1016/0022-3697(90)90116-w.

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8

Tang, S. L., R. V. Kasowski, and B. A. Parkinson. "Scanning tunneling microscopy of the subsurface structures of tungsten ditelluride and molybdenum ditelluride." Physical Review B 39, no. 14 (May 15, 1989): 9987–91. http://dx.doi.org/10.1103/physrevb.39.9987.

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9

Zhu, Xuesong, Dahao Wu, Shengzhi Liang, and Jing Liu. "Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure." Nanotechnology 34, no. 15 (February 3, 2023): 155502. http://dx.doi.org/10.1088/1361-6528/acb359.

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Abstract Flexible electronic and optoelectronic devices are highly desirable for various emerging applications, such as human-computer interfaces, wearable medical electronics, flexible display, etc. Layered two-dimensional (2D) material is one of the most promising types of materials to develop flexible devices due to its atomically thin thickness, which gives it excellent flexibility and mechanical endurance. However, the 2D material devices fabricated on flexible substrate inevitably suffer from mechanical deformation, which can severely affect device performances, resulting in function degradation and even failure. In this work, we propose a strain insensitive flexible photodetector based on MoS2/MoTe2 heterostructure on polyimide substrate, which provides a feasible approach to cancel unpredicted impacts of strain on the device performances. Specifically, the MoS2/MoTe2 heterostructure is deposited with 4 electrodes to form three independent devices of MoS2 FET, MoTe2 FET and MoS2/MoTe2 heterojunction. Among them, the MoS2/MoTe2 heterojunction is used as the photodetector, while the MoS2 FET is used as a strain gauge to calibrate the photo detection result. Such configuration is enabled by the Schottky barrier formed between the electrodes and the MoS2 flake, which leads to obvious and negligible photo response of MoS2/MoTe2 heterojunction and MoS2 FET, respectively, under low source-drain bias (ex. 10 mV). The experimental results show that the proposed mechanism can not only calibrate the photo response to cancel strain effect, but also successfully differentiate the wavelength (with fixed power) or power (with fixed wavelength) of light illumination.
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10

Khan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.

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In this paper, near unity broadband absorption of Van der Waals semiconductors on a metallic substrate, and their photovoltaic performances in the visible spectrum are simulated. Ultrathin layered semiconductors such as Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum di-selenide (MoSe2), Tungsten di-selenide (WSe2), Molybdenum ditelluride (MoTe2), and Tungsten ditelluride (WTe2) can create strong interference by damping optical mode in their multilayer form and increase light absorption at their heterojunctions with noble metals. From our simulation, it is observed that this absorbance can reach up to 94% when the semiconductors are placed on a gold substrate. The optimum thickness of these semiconductors in their heterostructures with gold is analyzed to create resonant absorption to generate the maximum amount of current density. The power conversion efficiency of the designed Schottky junction solar cells is calculated from their current density vs bias voltage characteristics that ranges from 1.57% to 6.80%. Moreover, the absorption coefficient, dark current characteristic, electric field intensity distribution in the device, and carrier generation rate during light illumination are presented with a view to characterizing and comparing among the parameters of TMDC based nanoscale solar cell.
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11

Khan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.

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In this paper, near unity broadband absorption of Van der Waals semiconductors on a metallic substrate, and their photovoltaic performances in the visible spectrum are simulated. Ultrathin layered semiconductors such as Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum di-selenide (MoSe2), Tungsten di-selenide (WSe2), Molybdenum ditelluride (MoTe2), and Tungsten ditelluride (WTe2) can create strong interference by damping optical mode in their multilayer form and increase light absorption at their heterojunctions with noble metals. From our simulation, it is observed that this absorbance can reach up to 94% when the semiconductors are placed on a gold substrate. The optimum thickness of these semiconductors in their heterostructures with gold is analyzed to create resonant absorption to generate the maximum amount of current density. The power conversion efficiency of the designed Schottky junction solar cells is calculated from their current density vs bias voltage characteristics that ranges from 1.57% to 6.80%. Moreover, the absorption coefficient, dark current characteristic, electric field intensity distribution in the device, and carrier generation rate during light illumination are presented with a view to characterizing and comparing among the parameters of TMDC based nanoscale solar cell.
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12

Wang, Zhouling, Wenwu Wang, Ya Yang, Wei Li, Lianghuan Feng, Jingquan Zhang, Lili Wu, and Guanggen Zeng. "The Structure and Stability of Molybdenum Ditelluride Thin Films." International Journal of Photoenergy 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/956083.

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Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.
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13

Cho, Suyeon, Se Hwang Kang, Ho Sung Yu, Hyo Won Kim, Wonhee Ko, Sung Woo Hwang, Woo Hyun Han, et al. "Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride." 2D Materials 4, no. 2 (June 5, 2017): 021030. http://dx.doi.org/10.1088/2053-1583/aa735e.

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14

Bernede, J. C., J. Pouzet, N. Manai, and A. Ben Mouais. "Structural characterization of synthesized molybdenum ditelluride thin films." Materials Research Bulletin 25, no. 1 (January 1990): 31–42. http://dx.doi.org/10.1016/0025-5408(90)90159-y.

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15

Chen, Xinpeng, Xiangdong Chen, Xing Ding, and Xiang Yu. "Gas Sensitive Characteristics of Polyaniline Decorated with Molybdenum Ditelluride Nanosheets." Chemosensors 10, no. 7 (July 6, 2022): 264. http://dx.doi.org/10.3390/chemosensors10070264.

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In this work, hydrochloric acid (HCl)-doped molybdenum ditelluride (MoTe2) nanosheets/polyaniline (PANI) nanofiber composites are prepared by in situ chemical oxidation polymerization, and then the composites are deposited on interdigital electrodes (IDEs) to fabricate a NH3 gas sensor. Morphological analysis of the composites reveals that the PANI fibers are deposited on 2D MoTe2 sheets, showing a porous mesh microstructure structure with a more continuous distribution of PANI layer. FTIR spectrum analysis indicates the interaction between the MoTe2 nanosheets and the PANI in the MoTe2/PANI composites. The results demonstrate that the as-prepared MoTe2/PANI composites exhibit higher response than the pure PANI, in particular, the 8 wt.% MoTe2/PANI composites display about 4.23 times enhancement in response value toward 1000 ppm NH3 gas compared with the pure PANI. The enhanced NH3 gas-sensitive properties may be due to the increasing surface area of MoTe2/PANI composite films and the possible interaction of the P-N heterojunctions formed between PANI and the 2H-MoTe2 nanosheets.
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16

Liang, Yangyang, Tao Li, Jia Zhao, Wenchao Qiao, Guiqiu Li, Tianli Feng, Shuaiyi Zhang, and Shenzhi Zhao. "Nano-seconds pulsed Er:Lu2O3 laser using molybdenum ditelluride saturable absorber." Optics & Laser Technology 121 (January 2020): 105791. http://dx.doi.org/10.1016/j.optlastec.2019.105791.

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17

Chen, Shao-Yu, Carl H. Naylor, Thomas Goldstein, A. T. Charlie Johnson, and Jun Yan. "Intrinsic Phonon Bands in High-Quality Monolayer T′ Molybdenum Ditelluride." ACS Nano 11, no. 1 (December 19, 2016): 814–20. http://dx.doi.org/10.1021/acsnano.6b07260.

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18

Zhu, Yi, Ziyuan Li, Linglong Zhang, Bowen Wang, Zhenqing Luo, Jianzheng Long, Jiong Yang, Lan Fu, and Yuerui Lu. "High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector." ACS Applied Materials & Interfaces 10, no. 50 (November 2018): 43291–98. http://dx.doi.org/10.1021/acsami.8b14076.

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19

Balakrishnan, K., and P. Ramasamy. "Study of anomalous electrical behaviour of molybdenum ditelluride single crystals." Journal of Crystal Growth 137, no. 1-2 (March 1994): 309–11. http://dx.doi.org/10.1016/0022-0248(94)91291-2.

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20

Mao, Dong, Bobo Du, Dexing Yang, Shengli Zhang, Yadong Wang, Wending Zhang, Xiaoyang She, Huachao Cheng, Haibo Zeng, and Jianlin Zhao. "Nonlinear Saturable Absorption of Liquid-Exfoliated Molybdenum/Tungsten Ditelluride Nanosheets." Small 12, no. 11 (January 22, 2016): 1489–97. http://dx.doi.org/10.1002/smll.201503348.

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21

Shaik, Z., and A. Deepak. "Comparison of current-voltage characteristics of molybdenum ditelluride and black phosphorene channel material based field effect transistor to optimize conductance." Journal of Physics: Conference Series 2484, no. 1 (May 1, 2023): 012005. http://dx.doi.org/10.1088/1742-6596/2484/1/012005.

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Abstract The work aims to improve the current and conductance characteristics of Molybdenum ditelluride and Black phosphorene in a novel 2D Field Effect transistor for different thickness level of oxide from 1 nm to 10 nm. Materials and Methods: Molybdenum ditelluride and Black phosphorene channel-based Field Effect transistor was chosen as two groups having 16 samples each. The current characteristics were simulated by varying the oxide thickness. Reducing the oxide thickness of MOTE2 will lead to increased current and conductance characteristics. The novel 2D FET is simulated to obtain better current characteristics based on nanotechnology and reducing the oxide thickness of BP will lead to increased current and conductance characteristics in novel 2D FET. Results: MOTE2 based Novel 2D FET has higher conductance than BP based 2D FET. Gate oxide thickness was at 1 nm during maximum conductivity for MOTE2 based 2D FET and 10 nm for BP based Novel 2D FET in NanoHub simulation tool. The results were obtained with a level of significance value is 0.001 for current and 0.0001 for conductance, and pretest power value of 80% using SPSS tools. Conclusion: Within the limit of study, MOTE2 based Novel 2D Field-effect transistor has better current (2876.39) and conductance (9.587e-03) mho characteristics than BP based 2D FET current (1250.58) and conductance (4.168e-03) mho.
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22

Kan, Min, Hong Gi Nam, Young Hee Lee, and Qiang Sun. "Phase stability and Raman vibration of the molybdenum ditelluride (MoTe2) monolayer." Physical Chemistry Chemical Physics 17, no. 22 (2015): 14866–71. http://dx.doi.org/10.1039/c5cp01649e.

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23

Wang, Jintao, Hao Chen, Zike Jiang, Jinde Yin, Jinzhang Wang, Min Zhang, Tingchao He, Junzi Li, Peiguang Yan, and Shuangchen Ruan. "Mode-locked thulium-doped fiber laser with chemical vapor deposited molybdenum ditelluride." Optics Letters 43, no. 9 (April 19, 2018): 1998. http://dx.doi.org/10.1364/ol.43.001998.

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24

Chen, Jiancui, Zhihong Feng, Shuangqing Fan, Sigang Shi, Yuchen Yue, Wanfu Shen, Yuan Xie, et al. "Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing." ACS Applied Materials & Interfaces 9, no. 35 (August 25, 2017): 30107–14. http://dx.doi.org/10.1021/acsami.7b06739.

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25

Saidov, Kamoladdin, Khakimjan Butanov, Jamoliddin Razzokov, Shavkat Mamatkulov, Dong Fang, and Olim Ruzimuradov. "Non-volatile phototransistor based on two dimensional MoTe2 nanostructures." E3S Web of Conferences 401 (2023): 05093. http://dx.doi.org/10.1051/e3sconf/202340105093.

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We fabricate field-effect transistors (FETs) from low-layer molybdenum ditelluride (MoTe2) in the nanometer range and study its optoelectronic properties. In particular, we investigate the mechanisms of photocurrent generation in MoTe2 FETs using gate and bias-dependent photocurrent measurements. The results obtained show the photocurrent effects and signals generated in the MoTe2-electrode junctions, which identify the effect of amplifying the photoconductor in the off and on modes. This is different from those conventional MoTe2 FETs, which exhibited a continuous increase in photocurrent with no back gate voltage. These results play an important role in the fabrication of direction dependent field effect transistors based on MoTe2 crystals.
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26

Xu, Xiaolong, Yu Pan, Shuai Liu, Bo Han, Pingfan Gu, Siheng Li, Wanjin Xu, et al. "Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2." Science 372, no. 6538 (April 8, 2021): 195–200. http://dx.doi.org/10.1126/science.abf5825.

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The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe2 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe2 single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.
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27

Wang, Wudi, Stephan Kim, Minhao Liu, F. A. Cevallos, R. J. Cava, and N. P. Ong. "Evidence for an edge supercurrent in the Weyl superconductor MoTe2." Science 368, no. 6490 (April 30, 2020): 534–37. http://dx.doi.org/10.1126/science.aaw9270.

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Edge supercurrents in superconductors have long been an elusive target. Interest in them has reappeared in the context of topological superconductivity. We report evidence for the existence of a robust edge supercurrent in the Weyl superconductor molybdenum ditelluride (MoTe2). In a magnetic field B, fluxoid quantization generates a periodic modulation of the edge condensate observable as a “fast-mode” oscillation of the critical current Ic versus B. The fast-mode frequency is distinct from the conventional Fraunhofer oscillation displayed by the bulk supercurrent. We confirm that the fast-mode frequency increases with crystal area as expected for an edge supercurrent. In addition, weak excitation branches are resolved that display an unusual broken symmetry.
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28

Ahmad, H., M. K. A. Zaini, A. A. Kamely, M. Z. Samion, M. F. Ismail, K. S. Lim, A. K. Zamzuri, and K. Thambiratnam. "Generation of four-wave mixing in molybdenum ditelluride (MoTe2)-deposited side-polished fibre." Journal of Modern Optics 68, no. 8 (March 31, 2021): 425–32. http://dx.doi.org/10.1080/09500340.2021.1908636.

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29

Aftab, Sikandar, Samiya, Rabia, Saqlain Yousuf, Muhammad Usman Khan, Rafia Khawar, Ayesha Younus, Mumtaz Manzoor, Muhammad Waqas Iqbal, and Muhammad Zahir Iqbal. "Carrier polarity modulation of molybdenum ditelluride (MoTe2) for phototransistor and switching photodiode applications." Nanoscale 12, no. 29 (2020): 15687–96. http://dx.doi.org/10.1039/d0nr03904g.

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30

Park, June, Younghee Kim, Young In Jhon, and Young Min Jhon. "Temperature dependent Raman spectroscopic study of mono-, bi-, and tri-layer molybdenum ditelluride." Applied Physics Letters 107, no. 15 (October 12, 2015): 153106. http://dx.doi.org/10.1063/1.4934181.

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31

Park, Jin Cheol, Seok Joon Yun, Hyun Kim, Ji-Hoon Park, Sang Hoon Chae, Sung-Jin An, Jeong-Gyun Kim, Soo Min Kim, Ki Kang Kim, and Young Hee Lee. "Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films." ACS Nano 9, no. 6 (June 11, 2015): 6548–54. http://dx.doi.org/10.1021/acsnano.5b02511.

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32

Ahmad, Harith, Nor Najwa Ismail, Siti Nabila Aidit, Leonard Bayang, and Norazriena Yusoff. "Q-„switched tunable ytterbium-doped fiber laser with molybdenum ditelluride-based saturable absorber." Optical Engineering 59, no. 05 (May 21, 2020): 1. http://dx.doi.org/10.1117/1.oe.59.5.056110.

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33

Sarwar, Shatila, Ashraf Ali, Zhongqi Liu, Junhao Li, Sunil Uprety, Horyun Lee, Ruigang Wang, et al. "Towards thermoneutral hydrogen evolution reaction using noble metal free molybdenum ditelluride/graphene nanocomposites." Journal of Colloid and Interface Science 581 (January 2021): 847–59. http://dx.doi.org/10.1016/j.jcis.2020.07.122.

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34

Alexeev, A. Yu, A. V. Krivosheeva, V. L. Shaposhnikov, and V. E. Borisenko. "Calculation of Phonon Spectra of Two-Dimensional Crystals of Molybdenum Disulfide and Ditelluride." Journal of Applied Spectroscopy 83, no. 6 (January 2017): 1035–38. http://dx.doi.org/10.1007/s10812-017-0403-9.

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35

Lei, Yuxin, Qiaoling Lin, Sanshui Xiao, Juntao Li, and Hanlin Fang. "Optically Active Telecom Defects in MoTe2 Fewlayers at Room Temperature." Nanomaterials 13, no. 9 (April 27, 2023): 1501. http://dx.doi.org/10.3390/nano13091501.

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The optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe2) show the potential for quantum light emission at optical fiber communication bands. However, the observation of defect-related light emission is still limited to cryogenic temperatures. In this work, we demonstrate the deep defect states in MoTe2 fewlayers produced via a standard van der Waal material transfer method with a heating process, which enables light emission in the telecommunication O-band. The optical measurements show evidence of localized excitons and strong interaction among defects. Furthermore, the optical emission of defects depends on the thickness of the host materials. Our findings offer a new route for tailoring the optical properties of two-dimensional materials in optoelectronic applications.
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36

Lin, Junhao, Jiadong Zhou, Sebastian Zuluaga, Peng Yu, Meng Gu, Zheng Liu, Sokrates T. Pantelides, and Kazu Suenaga. "Anisotropic Ordering in 1T′ Molybdenum and Tungsten Ditelluride Layers Alloyed with Sulfur and Selenium." ACS Nano 12, no. 1 (January 9, 2018): 894–901. http://dx.doi.org/10.1021/acsnano.7b08782.

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37

Iqbal, M. W., Faiza Firdous, Mumtaz Manzoor, Hira Ateeq, Sikander Azam, Sikandar Aftab, M. A. Kamran, Altaf ul Rehman, and Abdul Majid. "Study of electrical attributes of molybdenum ditelluride (MoTe2) FET using experimental and theoretical evidences." Microelectronic Engineering 230 (June 2020): 111365. http://dx.doi.org/10.1016/j.mee.2020.111365.

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38

Bae, Geun Yeol, Jinsung Kim, Junyoung Kim, Siyoung Lee, and Eunho Lee. "MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation." Nanomaterials 11, no. 11 (October 22, 2021): 2805. http://dx.doi.org/10.3390/nano11112805.

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Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe2). The formation of ohmic contacts increases the charge carrier mobility of MoTe2 field-effect transistor devices to 16.1 cm2 V−1s−1 with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.
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39

Li, Yongzhuo, Jianxing Zhang, Dandan Huang, Hao Sun, Fan Fan, Jiabin Feng, Zhen Wang, and C. Z. Ning. "Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity." Nature Nanotechnology 12, no. 10 (July 17, 2017): 987–92. http://dx.doi.org/10.1038/nnano.2017.128.

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40

O'Hare, P. A. G., and G. A. Hope. "Standard molar enthalpy of formation at 298.15 K of the β-modification of molybdenum ditelluride." Journal of Chemical Thermodynamics 21, no. 7 (July 1989): 701–7. http://dx.doi.org/10.1016/0021-9614(89)90051-7.

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41

Liang, Yangyang, Jia Zhao, Wenchao Qiao, Kejian Yang, Tao Li, and Shenzhi Zhao. "Passively Q-switched Er:YAG laser at 1645 nm utilizing a multilayer molybdenum ditelluride (MoTe2) saturable absorber." Laser Physics Letters 15, no. 9 (July 13, 2018): 095801. http://dx.doi.org/10.1088/1612-202x/aacfae.

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42

Wang, Guomei. "Wavelength-switchable passively mode-locked fiber laser with mechanically exfoliated molybdenum ditelluride on side-polished fiber." Optics & Laser Technology 96 (November 2017): 307–12. http://dx.doi.org/10.1016/j.optlastec.2017.05.030.

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43

Jin, Yuxuan, Kai Wu, Bining Sheng, Wentao Ma, Zefeng Chen, and Xiaofeng Li. "Plasmonic Bound States in the Continuum to Tailor Exciton Emission of MoTe2." Nanomaterials 13, no. 13 (June 30, 2023): 1987. http://dx.doi.org/10.3390/nano13131987.

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Plasmon resonances can greatly enhance light–matter interactions of two-dimensional van der Waals materials. However, the quality factor of plasmonic resonances is limited. Here, we demonstrate a plasmonic quasi-bound state in the continuum (quasi-BIC), which is composed of gold nanorod pairs. Through controlling the rotation angle of the nanorods, the quality factor of the plasmonic BIC mode can be tuned. Simulation results show that the plasmonic BIC combines the advantages of high-quality factor from the BIC effect and small mode volume from plasmonic resonance. Experiment results show that the designed plasmonic BIC mode exhibits a quality factor higher than 15 at the wavelength of around 1250 nm. Through integrating the plasmonic bound state structure with monolayer molybdenum ditelluride (MoTe2), the exciton emission of MoTe2 in the PL spectrum split into two exciton-polariton modes, which is attributed to the high Q factor and strong interaction between the BIC mode and excitons of MoTe2.
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44

Tse, Geoffrey, and Dapeng Yu. "The First Principle Study: Structural, Electronic, Optical, Phonon and Elastic Properties in Bulk and Monolayer Molybdenum Ditelluride." Journal of Nanoelectronics and Optoelectronics 12, no. 2 (February 1, 2017): 89–99. http://dx.doi.org/10.1166/jno.2017.1976.

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Panda, Manas Ranjan, Anish Raj K, Arnab Ghosh, Ajit Kumar, Divyamahalakshmi Muthuraj, Supriya Sau, Wenzhi Yu, et al. "Blocks of molybdenum ditelluride: A high rate anode for sodium-ion battery and full cell prototype study." Nano Energy 64 (October 2019): 103951. http://dx.doi.org/10.1016/j.nanoen.2019.103951.

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46

McGlynn, Jessica C., Irene Cascallana-Matías, James P. Fraser, Isolda Roger, James McAllister, Haralampos N. Miras, Mark D. Symes, and Alexey Y. Ganin. "Molybdenum Ditelluride Rendered into an Efficient and Stable Electrocatalyst for the Hydrogen Evolution Reaction by Polymorphic Control." Energy Technology 6, no. 2 (September 21, 2017): 345–50. http://dx.doi.org/10.1002/ente.201700489.

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47

Ma, Ning, Xiao-Yu Jiang, Lu Zhang, Xiao-Shuang Wang, Yu-Liang Cao, and Xian-Zheng Zhang. "Novel 2D Layered Molybdenum Ditelluride Encapsulated in Few-Layer Graphene as High-Performance Anode for Lithium-Ion Batteries." Small 14, no. 14 (February 28, 2018): 1703680. http://dx.doi.org/10.1002/smll.201703680.

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48

Varadwaj, Pradeep, Helder Marques, Arpita Varadwaj, and Koichi Yamashita. "Chalcogen···Chalcogen Bonding in Molybdenum Disulfide, Molybdenum Diselenide and Molybdenum Ditelluride Dimers as Prototypes for a Basic Understanding of the Local Interfacial Chemical Bonding Environment in 2D Layered Transition Metal Dichalcogenides." Inorganics 10, no. 1 (January 12, 2022): 11. http://dx.doi.org/10.3390/inorganics10010011.

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An attempt was made, using computational methods, to understand whether the intermolecular interactions in the dimers of molybdenum dichalcogenides MoCh2 (Ch = chalcogen, element of group 16, especially S, Se and Te) and similar mixed-chalcogenide derivatives resemble the room temperature experimentally observed interactions in the interfacial regions of molybdenites and their other mixed-chalcogen derivatives. To this end, MP2(Full)/def2-TVZPPD level electronic structure calculations on nine dimer systems, including (MoCh2)2 and (MoChCh′2)2 (Ch, Ch′ = S, Se and Te), were carried out not only to demonstrate the energetic stability of these systems in the gas phase, but also to reproduce the intermolecular geometrical properties that resemble the interfacial geometries of 2D layered MoCh2 systems reported in the crystalline phase. Among the six DFT functionals (single and double hybrids) benchmarked against MP2(full), it was found that the double hybrid functional B2PLYPD3 has some ability to reproduce the intermolecular geometries and binding energies. The intermolecular geometries and binding energies of all nine dimers are discussed, together with the charge density topological aspects of the chemical bonding interactions that emerge from the application of the quantum theory of atoms in molecules (QTAIM), the isosurface topology of the reduced density gradient noncovalent index, interaction region indicator and independent gradient model (IGM) approaches. While the electrostatic surface potential model fails to explain the origin of the S···S interaction in the (MoS2)2 dimer, we show that the intermolecular bonding interactions in all nine dimers examined are a result of hyperconjugative charge transfer delocalizations between the lone-pair on (Ch/Ch′) and/or the π-orbitals of a Mo–Ch/Ch′ bond of one monomer and the dπ* anti-bonding orbitals of the same Mo–Ch/Ch′ bond in the second monomer during dimer formation, and vice versa. The HOMO–LUMO gaps calculated with the MN12-L functional were 0.9, 1.0, and 1.1 eV for MoTe2, MoSe2 and MoS2, respectively, which match very well with the solid-state theoretical (SCAN-rVV10)/experimental band gaps of 0.75/0.88, 0.90/1.09 and 0.93/1.23 eV of the corresponding systems, respectively. We observed that the gas phase dimers examined are perhaps prototypical for a basic understanding of the interfacial/inter-layer interactions in molybdenum-based dichalcogenides and their derivatives.
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Qi, Dianyu, Cheng Han, Ximing Rong, Xiu-Wen Zhang, Manish Chhowalla, Andrew T. S. Wee, and Wenjing Zhang. "Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters." ACS Nano 13, no. 8 (July 22, 2019): 9464–72. http://dx.doi.org/10.1021/acsnano.9b04416.

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Li, Jiacheng, Hui Gao, Guoliang Zhou, Yan Li, Ye Chai, and Guolin Hao. "Controllable growth of large-area 1T′, 2H ultrathin MoTe2 films, and 1T′–2H in-plane homojunction." Journal of Applied Physics 131, no. 18 (May 14, 2022): 185302. http://dx.doi.org/10.1063/5.0087432.

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Atomically thin molybdenum ditelluride (MoTe2) has been intensively studied as an emerging material for electronics and optoelectronics due to its unique properties. While the small free energy difference between the 2H and 1T′ phases of MoTe2 always results in mixed-phase growth, precisely controlled phase transition of MoTe2 nanostructures is still a considerable challenge. Here, the centimeter-scale 1T′, 2H ultrathin MoTe2 films, and in-plane 1T′–2H homojunction have been synthesized by ambient pressure chemical vapor deposition based on the precursor design and space-confined strategies. The controllable growth of pure 1T′, 2H MoTe2, and 1T′–2H mixed-phase MoTe2 with phase separation and homogeneous mixture, respectively, has been achieved by adjusting growth temperature and growth time. The thickness of synthesized 1T′ and 2H ultrathin MoTe2 films can be effectively controlled by tuning the space-confined height. The corresponding growth mechanism was further illuminated based on systematically experimental characterizations and computational fluid dynamics simulations. The electrical transport properties of 1T′ and 2H MoTe2 films were investigated by conductive atomic force microscope and MoTe2-based thin-film field-effect transistors. Our experimental results provide a new route to realize the phase transition of two-dimensional materials, which makes these materials easily accessible as functional building blocks for next-generation electronic and optoelectronic devices.
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