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Journal articles on the topic 'Molecular diode'

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Author: Grafiati

Published: 25 May 2024

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1

Guo, Qianqian, Fei Lu, Qiulin Tan, Tianhao Zhou, Jijun Xiong, and Wendong Zhang. "Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing." Sensors 19, no. 2 (January 9, 2019): 224. http://dx.doi.org/10.3390/s19020224.

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High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively.

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2

Vandevender, J. P., S. A. Slutz, D. B. Seidel, R. S. Coats, P. A. Miller, C. W. Mendel, and J. P. Quintenz. "PBFA II ion diode theory and implications." Laser and Particle Beams 5, no. 3 (August 1987): 439–49. http://dx.doi.org/10.1017/s0263034600002925.

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Fully electromagnetic, relativistic, two-dimensional, particle-in-cell (PIC) simulations of barrel-type and extractor-type Applied-B ion diodes have increased our confidence in the design of present and future diodes for the Particle Beam Fusion Accelerator II (PBFA II). In addition, the data from various experiments on Pro to I, Proto II, and PBFA I Applied-B ion diodes are inconsistent with previous models of diode operation, based on anode-cathode gap closure from expanding plasmas. A new model has been devised and applied to the PBFA II diode to explain the diode impedance and its time history, and to suggest methods for controlling the impedance.

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3

Калиновский, В. С., Е. В. Контрош, Г. В. Климко, С. В. Иванов, В. С. Юферев, Б. Я. Бер, Д. Ю. Казанцев, and В. М. Андреев. "Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения." Физика и техника полупроводников 54, no. 3 (2020): 285. http://dx.doi.org/10.21883/ftp.2020.03.49034.9298.

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Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

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4

Pushkarev, A. I., and YU I. Isakova. "A spiral self-magnetically insulated ion diode." Laser and Particle Beams 30, no. 3 (June 12, 2012): 427–33. http://dx.doi.org/10.1017/s0263034612000316.

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AbstractThe paper presets the results of a study on a self-magnetically insulated ion diode with an explosive-emission potential electrode. The experiments have been carried out using the TEMP-4M accelerator, operating in a double-pulse mode: the first negative pulse (300–500 ns, 100–150 kV) followed by the second positive pulse (150 ns, 250–300 kV). The ion beam energy density was 0.3–2.5 J/cm2; the beam was composed from carbon ions (80–85%) and protons. We studied several geometries of the diode: planar and focusing strip arrangement, annular and spiral geometries. It was shown that during the second voltage pulse, a condition of magnetic insulation in the diode gap is fulfilled (B/Bcr ≥3). Using the new spiral geometry of the diode, it was possible to increase the efficiency of ion current generation due to the suppression of the electron component of the total diode current by increasing the electron transit time in the gap. We have increased the efficiency of carbon ion generation from 5–9% (in the planar strip diodes) up to 17–20% in the spiral diode. The spiral geometry of the diode makes it possible to increase the efficiency of C+ ion generation 25–30 times compared to the space-charge-limited current (Childe-Langmuir limit). This is more than two times higher than in other known geometries of self-magnetically insulated diodes. The spiral diode has a resource of more than 107 pulses.

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5

Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (November 23, 2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

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6

Cammack, Richard. "Plug in a molecular diode." Nature 356, no. 6367 (March 1992): 288–89. http://dx.doi.org/10.1038/356288b0.

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7

Оболенская, Е. С., А. С. Иванов, Д. Г. Павельев, В. А. Козлов, and А. П. Васильев. "Сравнение особенностей транспорта электронов и субтетрагерцовой генерации в диодах на основе 6-, 18-, 30-, 70- и 120-периодных сверхрешеток GaAs/AlAs." Физика и техника полупроводников 53, no. 9 (2019): 1218. http://dx.doi.org/10.21883/ftp.2019.09.48127.10.

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AbstractA comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage drop across one superlattice period is determined for all special points in the current–voltage characteristics of the diodes. The mechanism of the appearance of stable current oscillations in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a high doping level is investigated.

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8

Cai, Dan, Lie Liu, Jinchuan Ju, Xuelong Zhao, and Yongfeng Qiu. "Observation of a U-like shaped velocity evolution of plasma expansion during a high-power diode operation." Laser and Particle Beams 32, no. 3 (July 24, 2014): 443–47. http://dx.doi.org/10.1017/s0263034614000366.

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AbstractThe diode closure velocity has been investigated in pulsed high-power diodes operating with the mode of space-charge-limed bipolar flow. A combination of time-resolved electrical and optical diagnostics has been employed to study the basic phenomenon of the temporal and spatial evolutions of the diode plasmas. The results from the two diagnostics were compared. Since anode plasma rapidly expands, the diode closure speedvdincreases in the end of the current pulse. The diode closure speedvdcan be divided into three stages with a U-like whole shape. The obtained results can be used in various applications, for instance, the high-power microwave sources, electron-beam plasma heating, and material treating.

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9

Гребенщикова, Е. А., В. Г. Сидоров, В. А. Шутаев, and Ю. П. Яковлев. "Влияние концентрации водорода на фототок диодов Шоттки Pd/n-InP." Физика и техника полупроводников 53, no. 2 (2019): 246. http://dx.doi.org/10.21883/ftp.2019.02.47107.8967.

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AbstractThe variation rate of the short-circuit photocurrent of Pd/ n -InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H_2 concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light (λ = 0.9 μm), the hydrogen concentration in the gas mixture and the Pd/ n -InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.

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10

KAWAGUCHI, H. "POLARIZATION BISTABLE LASER DIODES." Journal of Nonlinear Optical Physics & Materials 02, no. 03 (July 1993): 367–89. http://dx.doi.org/10.1142/s021819919300022x.

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Static and dynamic characteristics of a pitchfork bifurcation polarization bistability in a laser diode are analyzed using rate-equations taking account of nonlinear gain. It is shown that the bistable laser diode has the advantage of high-speed switching when trigger optical pulses are coupled coherently to the bistable laser output. Experimental results on this new polarization bistability in a laser diode with a two-armed polarization-selective external cavity are also described with a brief review of recent progress in research on polarization bistable laser diodes.

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11

Metzger, Robert M., Hiroaki Tachibana, Xiangli Wu, Ulf Höpfner, Bo Chen, M. V. Lakshmikantham, and Michael P. Cava. "Is Ashwell's zwitterion a molecular diode?" Synthetic Metals 85, no. 1-3 (March 1997): 1359–60. http://dx.doi.org/10.1016/s0379-6779(97)80271-8.

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12

Petrov, E. G., V. A. Leonov, and E. V. Shevchenko. "Electrofluorescence polarity in a molecular diode." Journal of Experimental and Theoretical Physics 125, no. 5 (November 2017): 856–74. http://dx.doi.org/10.1134/s1063776117110115.

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13

Pandey, Rajeev R., Nicolas Bruque, Khairul Alam, and Roger K. Lake. "Carbon nanotube - molecular resonant tunneling diode." physica status solidi (a) 203, no. 2 (February 2006): R5—R7. http://dx.doi.org/10.1002/pssa.200521467.

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14

Pandey, Rajeev R., Nicolas Bruque, Khairul Alam, and Roger K. Lake. "Carbon nanotube - molecular resonant tunneling diode." physica status solidi (a) 203, no. 2 (February 2006): 199. http://dx.doi.org/10.1002/pssa.200690006.

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15

Eladl, Sh M., and A. Nasr. "Transient response analysis of a resonant cavity enhanced light emitting diode." Semiconductor Physics, Quantum Electronics and Optoelectronics 26, no. 3 (September 20, 2023): 315–20. http://dx.doi.org/10.15407/spqeo26.03.315.

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This article is devoted to a theoretical evaluation of the transient behavior of a light emitting diode with a resonant cavity called the resonant cavity enhanced light emitting diode (RCELED). The used analytical model is based on applying the convolution theorem for a step input signal and the transfer function of RCELED in the presence of photon recycling. Influence of the efficiency of extraction due to photon recycling on the output optical power is analyzed. The target parameters characterizing the transient behavior are investigated. A traditional light emitting diode with no photon recycling is compared to a diode with photon recycling. The obtained results show the improvement of the output optical power and the rise time with the increase of extraction efficiency and in the presence of photon recycling in the light emitting diodes. The light emitting diode considered here reaches the highest steady state output power within 2 ns. Therefore this diode model may be used for fast speed and high optical gain applications such as in thermal imaging systems and short reach optical interconnects.

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16

Karushkin, M. F. "Frequency multipliers on semiconductor diode structures." Технология и конструирование в электронной аппаратуре, no. 3 (2018): 22–37. http://dx.doi.org/10.15222/tkea2018.3.22.

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Obvious advantages of the millimeter wave technology including a large information capacity, high directivity of radiation, diagnostics and spectroscopy capabilities of different environments, including the methods of electron paramagnetic resonance and high resolution nuclear magnetic resonance have led to the rapid development of techniques for that range throughout the world. These advantages determine the attractiveness of the practical application of millimeter wavelengths to create high-speed communication links, high-precision radar, chemicals identification device and other equipment. Important role in the development of millimeter and sub-millimeter wave ranges belongs to the frequency multipliers development. This paper analyzes the main trends of modern development of efficient frequency multipliers on semiconductor diode structures, which are based on different physical principles, namely diode harmonic generators; frequency multipliers based on nonlinear dependencies of their reactive parameters on the voltage; frequency multipliers of high multiplicity on IMPATT diodes operating in mode of pulse exciting oscillations at high frequencies; multipliers on complex heterostructures and quantum super lattices in the terahertz range. The paper presents design solutions for frequency multipliers with various configurations and ways of optimizing the diode structures and operation modes that ensure their effective functioning in the frequency multiplication mode. The connection of electric parameters of frequency multipliers with output characteristics of microwave devices is determined. The given review of the results on designing power sources based on multiplying diodes indicates significant advances in this field and rapid development of the electronic component base in the short-wave part of the microwave spectrum. Further development of the technique of multiplying diodes will move forward not only in the direction of increasing the working capacity, but also in solving the problem of microminiaturization. In this regard, the emergence of heteroepitaxial multilayer varactor structures should be noted. Such structures are made with molecular beam epitaxy and have all the advantages of a composite varactor, but at the same time have better thermal characteristics and good prospects for their applications in the terahertz range.

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17

Muray, Kathleen. "Photometry of diode emitters: light emitting diodes and infrared emitting diodes." Applied Optics 30, no. 16 (June 1, 1991): 2178. http://dx.doi.org/10.1364/ao.30.002178.

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18

Quintenz, J. P., D. B. Seidel, M. L. Kiefer, T. D. Pointon, R. S. Coats, S. E. Rosenthal, T. A. Mehlhorn, M. P. Desjarlais, and N. A. Krall. "Simulation codes for light-ion diode modeling." Laser and Particle Beams 12, no. 2 (June 1994): 283–324. http://dx.doi.org/10.1017/s0263034600007746.

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The computational tools used in the investigation of light-ion diode physics at Sandia National Laboratories are described. Applied-B ion diodes are used to generate intense beams of ions and focus these beams onto targets as part of Sandia's inertial confinement fusion program. Computer codes are used to simulate the energy storage and pulse forming sections of the accelerator and the power flow and coupling into the diode where the ion beam is generated. Other codes are used to calculate the applied magnetic field diffusion in the diode region, the electromagnetic fluctuations in the anode-cathode gap, the subsequent beam divergence, the beam propagation, and response of various beam diagnostics. These codes are described and some typical results are shown.

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19

KOVALCHUK, B. M., E. N. ABDULLIN, D. M. GRISHIN, V. P. GUBANOV, V. B. ZORIN, A. A. KIM, E. V. KUMPJAK, et al. "Linear transformer accelerator for the excimer laser." Laser and Particle Beams 21, no. 2 (April 2003): 219–22. http://dx.doi.org/10.1017/s026303460321209x.

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A high-current accelerator for pumping of the 200-L excimer laser is developed, providing electron energy of 550 keV, a diode current of 320 kA, and an e-beam current of 250 kA. The high-voltage part of the accelerator consists of two linear transformers with a stored energy of 98 kJ. To reduce the influence of the self-magnetic field on e-beam formation, the vacuum diode is divided into six separate magnetically isolated diodes.

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20

Pascu, Razvan, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Philippe Godignon, Cosmin Romanitan, Matei Serbanescu, and Adrian Tulbure. "60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes." Sensors 21, no. 3 (January 31, 2021): 942. http://dx.doi.org/10.3390/s21030942.

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A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni2Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R2 reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.

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21

Perrin, Mickael L., Rienk Eelkema, Jos Thijssen, Ferdinand C. Grozema, and Herre S. J. van der Zant. "Single-molecule functionality in electronic components based on orbital resonances." Physical Chemistry Chemical Physics 22, no. 23 (2020): 12849–66. http://dx.doi.org/10.1039/d0cp01448f.

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22

Ruder, Steven, Tom Earles, Christian Galstad, Michael Klaus, Don Olson, and Luke J. Mawst. "High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices." Photonics 9, no. 7 (June 21, 2022): 436. http://dx.doi.org/10.3390/photonics9070436.

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Three types of GaAsP metamorphic buffer layers, including linearly graded, step graded, and metamorphic superlattices, were compared for the purposes of virtual substrates for red laser diode heterostructures. Laser diodes were fabricated on GaAs substrates and relaxed GaAsP metamorphic superlattice virtual substrates. A laser diode structure with a tensile-strained quantum well on a standard miscut GaAs substrate achieved TM-polarized emission at a 638 nm wavelength with 45% peak power conversion efficiency (PCE) at a 880 mW continuous wave (CW) output power with T0 = 77 K and T1 = 266 K. An analogous laser diode structure with a compressively strained quantum well on the metamorphic superlattice emitted TE-polarized 639 nm light with 35.5% peak PCE at 880 mW CW with T0 = 90 K and T1 = 300 K.

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23

Osthoff, Hans D., Wolfgang Jäger, Johnathon Walls, and William A. van Wijngaarden. "An axial molecular-beam diode laser spectrometer." Review of Scientific Instruments 75, no. 1 (January 2004): 46–53. http://dx.doi.org/10.1063/1.1634364.

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24

Ocaya, R. O., Mehmet Özdemir, Resul Özdemir, Ahmed Al-Ghamdi, Hakan Usta, W. A. Farooq, and F. Yakuphanoglu. "Ambipolar small molecular semiconductor-based heterojunction diode." Synthetic Metals 221 (November 2016): 48–54. http://dx.doi.org/10.1016/j.synthmet.2016.10.001.

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25

Petrov, E. G., V. O. Leonov, V. May, and P. Hänggi. "Transient currents in a molecular photo-diode." Chemical Physics 407 (October 2012): 53–64. http://dx.doi.org/10.1016/j.chemphys.2012.08.017.

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26

Davies, P. B., and A. J. Morton-Jones. "IR diode laser spectroscopy in molecular beams." Infrared Physics 25, no. 1-2 (February 1985): 215–18. http://dx.doi.org/10.1016/0020-0891(85)90080-6.

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27

BAI, PING, CHEE CHING CHONG, ER PING LI, and ZHIKUAN CHEN. "A MOLECULAR DIODE BASED ON CONJUGATED CO-OLIGOMERS." International Journal of Nanoscience 05, no. 04n05 (August 2006): 535–40. http://dx.doi.org/10.1142/s0219581x06004759.

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A molecular diode based on a conjugated co-oligomer composed of p-type and n-type segments is investigated using the first principles method. The co-oligomer is connected to Au electrodes to form an Au –oligomer– Au system. The infinite system is dealt with a finite structure confined in a device region and effects from semi-infinite electrodes. Density functional theory and nonequilibrium Green's function are used to describe the device region self-consistently. The current–voltage (I–V) characteristics of the constructed system are calculated and a rectification behavior is observed. The energy gap and the spatial orientation of molecular orbitals, and the transmission functions are calculated to analyze the I–V characteristics of the molecular diode.

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28

Булярский, С. В., В. С. Белов, Г. Г. Гусаров, А. В. Лакалин, К. И. Литвинова, and А. П. Орлов. "Определение механизмов протекания тока в структурах из двух слоев диэлектриков." Физика и техника полупроводников 57, no. 2 (2023): 122. http://dx.doi.org/10.21883/ftp.2023.02.55335.3545.

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Diodes of type Metal-Dielectric 1-Dielectric 2-Metal are promising for use in devices paired with antennas-rectennas. To create diodes with the characteristics required for operation, it is necessary to understand the mechanisms of current transport in both dielectrics and their contacts with metals. To solve this problem, it is necessary to develop an algorithm for dividing the general current-voltage characteristic into characteristics of individual contacts, the analysis of which will also allow us to investigate the problems of the properties of defects in the dielectrics that make up the diode. In this paper, the solution of the above problems is presented on the example of the Al-Al2O3-Ta2O5-Ni diode. The authors showed how one can divide the current-voltage characteristic into components, calculate potential barriers at the boundaries of metals with contacting dielectrics, and determine the concentration and energy characteristics of structural defects in dielectrics.

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29

Luo, Yong, Hongtao Liu, Yiming He, Hengrong Cui, and Guangli Yang. "Continuous Resonance Tuning without Blindness by Applying Nonlinear Properties of PIN Diodes." Sensors 21, no. 8 (April 16, 2021): 2816. http://dx.doi.org/10.3390/s21082816.

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Metamaterial antennas consisting of periodical units are suitable for achieving tunable properties by employing active elements to each unit. However, for compact metamaterials with a very limited number of periodical units, resonance blindness exists. In this paper, we introduce a method to achieve continuous tuning without resonance blindness by exploring hence, taking advantage of nonlinear properties of PIN diodes. First, we obtain the equivalent impedance of the PIN diode through measurements, then fit these nonlinear curves with mathematical expressions. Afterwards, we build the PIN diode model with these mathematical equations, making it compatible with implementing co-simulation between the passive electromagnetic model and the active element of PIN diodes and, particularly, the nonlinear effects can be considered. Next, we design a compact two-unit metamaterial antenna as an example to illustrate the electromagnetic co-simulation. Finally, we implement the experiments with a micro-control unit to validate this method. In addition, the nonlinear stability and the supplying voltage tolerance of nonlinear states for both two kinds of PIN diodes are investigated as well. This method of obtaining smooth tuning with nonlinear properties of PIN diodes can be applied to other active devices, if only PIN diodes are utilized.

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30

Тандоев, А. Г., Т. Т. Мнацаканов, and С. Н. Юрков. "Мощные диоды Шоттки с участком отрицательного дифференциального сопротивления на вольт-амперной характеристике." Физика и техника полупроводников 55, no. 1 (2021): 75. http://dx.doi.org/10.21883/ftp.2021.01.50390.9521.

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It is shown that at high current densities the carrier transport in base layer of Schottky diodes in addition to commonly accepted diffusive and drift currents is defined by recently discovered diffusion stimulated by quasi-neutral drift (DSQD). The influence of this recently discovered component of current on current-voltage characteristics of Schottky diode has been investigated. It was shown that in case if the ratio of base width $W$ to ambipolar diffusive length $L$ is higher than 1 ($W/L>1$) a part with negative differential resistance appears on the current-voltage characteristics of Schottky diode. The results of analytical investigation are confirmed by numerical calculation using INVESTIGATION program.

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31

Малеев, Н. А., М. А. Бобров, А. Г. Кузьменков, А. П. Васильев, М. М. Кулагина, Ю. А. Гусева, С. А. Блохин, and В. М. Устинов. "Гетеробарьерные варакторы с неоднородно легированными модулирующими слоями." Письма в журнал технической физики 45, no. 20 (2019): 51. http://dx.doi.org/10.21883/pjtf.2019.20.48396.17960.

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Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.

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32

Kaur, Milanpreet, Ravinder Singh Sawhney, and Derick Engles. "Electron transport in doped fullerene molecular junctions." International Journal of Computational Materials Science and Engineering 06, no. 02 (June 2017): 1750019. http://dx.doi.org/10.1142/s2047684117500191.

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The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au–C[Formula: see text]Li4–Au and Au–C[Formula: see text]Ne4–Au devices behave as an ordinary p–n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

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33

Bertling, Karl, Xiaoqiong Qi, Thomas Taimre, Yah Leng Lim, and Aleksandar D. Rakić. "Feedback Regimes of LFI Sensors: Experimental Investigations." Sensors 22, no. 22 (November 21, 2022): 9001. http://dx.doi.org/10.3390/s22229001.

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In this article, we revisit the concept of optical feedback regimes in diode lasers and explore each regime experimentally from a somewhat unconventional point of view by relating the feedback regimes to the laser bias current and its optical feedback level. The results enable setting the operating conditions of the diode laser in different applications requiring operation in different feedback regimes. We experimentally explored and theoretically supported this relationship from the standard Lang and Kobayashi rate equation model for a laser diode under optical feedback. All five regimes were explored for two major types of laser diodes: inplane lasers and vertical-cavity surface emitting lasers. For both lasers, we mapped the self-mixing strength vs. drive current and feedback level, observed the differences in the shape of the self-mixing fringes between the two laser architectures and a general simulation, and monitored other parameters of the lasers with changing optical feedback.

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34

Pushkarev, A. I., Yu I. Isakova, and I. P. Khaylov. "Correlation analysis of intense ion beam energy in a self magnetically insulated diode." Laser and Particle Beams 32, no. 2 (April 1, 2014): 311–19. http://dx.doi.org/10.1017/s0263034614000123.

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AbstractThis paper presents the results of a statistical and correlation analysis of the energy and energy density of an ion beam formed by a self-magnetically insulated diode with an explosive emission cathode. The experiments were carried out with the TEMP-4M accelerator operating in double-pulse mode: plasma formation occurs during the first pulse (negative polarity, 300–500 ns, 100–150 kV), and ion extraction and acceleration during the second pulse (positive polarity, 120 ns, 250–300 kV). Various arrangements of diodes have been investigated: strip focusing and planar diodes, a conical focusing diode and a spiral diode. The total ion beam energy was measured using both a calorimeter and an infrared camera and the beam energy density was measured by the thermal imaging and acoustic diagnostics. The correlation analysis showed that ion current density is only weakly dependent on the accelerating voltage and other output parameters of the accelerator, with the coefficient of determination <0.3. At the same time, in this paper, we have identified that the total energy of the beam and the energy density is strongly dependant on the accelerator output parameters, since the coefficient of determination >0.9. The mechanism governing stabilization of the beam energy density from shot to shot was discovered and attributed to formation of the neutral component in ion beam as being due to charge exchange between accelerated ions and neutral molecules from a neutral layer near the anode surface. Implementation using a self-magnetically insulated diode with an explosive-emission cathode, having an operational lifetime of up to 106 shots, has promising prospects for various technological applications.

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35

Seminario, Jorge M., Angelica G. Zacarias, and James M. Tour. "Theoretical Study of a Molecular Resonant Tunneling Diode." Journal of the American Chemical Society 122, no. 13 (April 2000): 3015–20. http://dx.doi.org/10.1021/ja992936h.

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36

Liu, Di‐Jia, Wing‐Cheung Ho, and Takeshi Oka. "Rotational spectroscopy of molecular ions using diode lasers." Journal of Chemical Physics 87, no. 5 (September 1987): 2442–46. http://dx.doi.org/10.1063/1.453084.

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Zelinger, Zdeněk, Svatopluk Civiš, Pavel Kubát, and Pavel Engst. "Diode laser application for research of molecular ions." Infrared Physics & Technology 36, no. 1 (January 1995): 537–43. http://dx.doi.org/10.1016/1350-4495(94)00091-x.

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38

Petrov, E. G. "Molecular Diode at Fast Switching on (off) Regime." Molecular Crystals and Liquid Crystals 496, no. 1 (December 10, 2008): 1–15. http://dx.doi.org/10.1080/15421400802451337.

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39

Petrov, E. G., V. O. Leonov, and Ye V. Shevchenko. "Bipolar and unipolar electrofluorescence in a molecular diode." JETP Letters 105, no. 2 (January 2017): 89–97. http://dx.doi.org/10.1134/s0021364017020126.

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40

Petrov, E. G., V. A. Leonov, and Ye V. Shevchenko. "Kinetics of current formation in a molecular diode." Low Temperature Physics 38, no. 5 (May 2012): 428–36. http://dx.doi.org/10.1063/1.4711127.

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41

Majumder, Chiranjib, Hiroshi Mizuseki, and Yoshiyuki Kawazoe. "Theoretical Analysis for a Molecular Resonant Tunneling Diode." Japanese Journal of Applied Physics 41, Part 1, No. 4B (April 30, 2002): 2770–73. http://dx.doi.org/10.1143/jjap.41.2770.

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42

Jennings, D. E. "Laboratory diode laser spectroscopy in molecular planetary astronomy." Journal of Quantitative Spectroscopy and Radiative Transfer 40, no. 3 (September 1988): 221–38. http://dx.doi.org/10.1016/0022-4073(88)90116-1.

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43

Jang, Soohwan, Sunwoo Jung, and Kwang Hyeon Baik. "Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer." Sensors 20, no. 3 (February 4, 2020): 835. http://dx.doi.org/10.3390/s20030835.

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Enhanced hydrogen sensing performance of Pt Schottky diodes on ZnO single crystal wafers in humid ambient conditions is reported using a polymethylmethacrylate (PMMA) membrane layer. ZnO diode sensors showed little change in forward current when switching to wet ambient H2 conditions with 100% relative humidity. This sensitivity drop in the presence of water vapor can be attributed to surface coverage of hydroxyl groups on the Pt surface in humid ambient conditions. The hydrogen sensitivity of PMMA-coated diode sensors recovered up to 805% in wet H2 ambient conditions at room temperature. The PMMA layer can selectively filter water vapor and allow H2 molecules to pass through the membrane layer. It is clear that the PMMA layer can effectively serve as a moisture barrier because of low water vapor permeability and its hydrophobicity. In both dry and wet conditions, ZnO diodes exhibited relatively fast and stable on/off switching in each cycle with good repeatability.

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44

Eriksson, Jens, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, and Vito Raineri. "Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes." Solid State Phenomena 156-158 (October 2009): 331–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.331.

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The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.

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45

Komarov, O. L., Yu M. Saveljev, V. I. Engelko, and P. Vrba. "Influence of collector ions on operation of magnetically insulated diode." Laser and Particle Beams 10, no. 3 (September 1992): 531–38. http://dx.doi.org/10.1017/s0263034600006777.

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We studied the formation of the collector ion flow in magnetically insulated diodes (MID) with plate-, sphere-, and cone-shaped cathodes. The ions are formed as a result of the ionization of residual gas by electron bombardment and are focused into the cathode plasma region. This effect can negatively influence diode operation in the microsecond range of pulse duration.

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46

Kovalchuk, B. M., A. V. Kharlov, S. N. Volkov, A. A. Zherlitsyn, V. B. Zorin, G. V. Smorudov, and V. N. Kiselev. "Electron-beam accelerator for pumping of a Xe2 lamp." Laser and Particle Beams 30, no. 1 (January 5, 2012): 23–29. http://dx.doi.org/10.1017/s0263034611000632.

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AbstractA high-current electron-beam accelerator for pumping of a Xe2 lamp was developed. It is intended for injection of an electron beam into cylindrical gas cavity (diameter of 400 mm, length of 1600 mm, and the absolute pressure up to 3 bars). Two electron diodes in parallel are used in the accelerator. Each diode is connected to a linear transformer driver with vacuum insulation of a secondary turn. The next parameters of the accelerator have been obtained: diode voltage — 550–600 kV, diode current — 276–230 kA, current rise time — 160 ns, maximum power of the electron beam — 130 GW, pulse width on half maximum — 160 ns, electron beam energy at power level not less than half of maximum value — 20 kJ. The total energy of electrons, which pass through a 40 µm Ti foil into the Xe cell, is 8–9 kJ in the 150–160 ns pulse (full width at half maximum) mean specific power of energy input into gas cavity is about 330 kW/cm3. Design of the accelerator and test results are presented and discussed in this paper.

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47

Savage, Neil. "Diode drivers." Nature Photonics 2, no. 4 (April 2008): 252–53. http://dx.doi.org/10.1038/nphoton.2008.49.

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48

Chu, Shucheng, and Hirofumi Kan. "Efficient Silicon Light-Emitting-Diodes with a p-Si/Ultrathin SiO2/n-Si Structure." International Journal of Optics 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/364594.

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We report the efficient enhancement of light emission from silicon crystal by covering the silicon surface with an ultrathin (several nm) SiO2layer. The photoluminescence of Si band edge emission (1.14 μm band) at room temperature is enhanced by two orders of magnitude. Compared with a p-Si/n-Si diode, light emission from a p-Si/SiO2/n-Si diode by current injection via direct tunneling is enhanced by more than 3 orders of magnitude. The light-emission enhancement is attributed to the diminishment of nonradiation recombination at the surface/interface and to the space confinement of the carrier recombination. The simple structure and low operating bias (approximately 1 volt) of our light emitting diodes supply a new choice for realizing efficient current injection light source in silicon compatible with conventional ULSI technology.

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49

Hui, Rongqing, Sergio Benedetto, and Ivo Montrosset. "Optical bistability in diode-laser amplifiers and injection-locked laser diodes." Optics Letters 18, no. 4 (February 15, 1993): 287. http://dx.doi.org/10.1364/ol.18.000287.

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50

Li, Chunxia, Xiao Jin, Ganping Wang, Beizhen Zhang, Haitao Gong, Yanqing Gan, Fei Li, and Falun Song. "An Axial Foilless Diode Guided by Composite Magnetic Field for the Production of Relativistic Electron Beams." Laser and Particle Beams 2021 (February 13, 2021): 1–9. http://dx.doi.org/10.1155/2021/6610870.

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Foilless diode are widely used in high-power microwave devices, but the traditional foilless diodes have large volume, heavy weight, and high power consumption, which are not conducive to the application of high-power microwave system on mobile platform. In order to reduce the size of the foilless diode, improve the transmission efficiency of electron beams, and reduce the weight and power consumption of the guiding magnetic field system, an axial foilless diode with a composite guiding magnetic field system is developed in this paper. By adjusting the structure size and magnetic field parameters of solenoid coil, permanent magnet, and soft magnet, the configuration of the composite magnetic field is optimized. The diameter of the anode tube is about 40% smaller than that of the original structure, and the weight and power consumption of the guiding magnetic system are about 40% lower than that of the original system when the same axial magnetic field intensity in the uniform region is generated. When the magnetic field strength of the permanent magnet is set as 1.4 T and that of the solenoid coil is in the range of 0.5 T∼1 T, the electron beam transmission efficiency is 100%, and the diode impedance is adjustable in the range of 100 Ω∼240 Ω. The experimental results verify the correctness of the simulation analysis. The experimental results show that when the magnetic field strength of the solenoid coil is 0.98 T (0.5 T) and that of the permanent magnet is 1.4 T, the transmission efficiency of the high-current annular electron beam with a peak voltage of 636 kV (590 kV) and a peak current of 3.3 kA (2.6 kA) is 100%, and the diode impedance is about 194 Ω (220 Ω).

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