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Journal articles on the topic 'Molecular beam epitaxy'

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Published: 4 June 2021

Last updated: 8 June 2024

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1

Yong, T. Y. "Molecular beam epitaxy." IEEE Potentials 8, no. 3 (October 1989): 18–22. http://dx.doi.org/10.1109/45.41532.

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2

Joyce, B. A. "Molecular beam epitaxy." Reports on Progress in Physics 48, no. 12 (December 1, 1985): 1637–97. http://dx.doi.org/10.1088/0034-4885/48/12/002.

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3

Arthur, John R. "Molecular beam epitaxy." Surface Science 500, no. 1-3 (March 2002): 189–217. http://dx.doi.org/10.1016/s0039-6028(01)01525-4.

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4

KAMOHARA, Hideaki, and Kazue TAKAHASHI. "Molecular Beam Epitaxy." Journal of the Society of Mechanical Engineers 92, no. 848 (1989): 625–28. http://dx.doi.org/10.1299/jsmemag.92.848_625.

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5

Panish, Morton B. "Molecular-Beam Epitaxy." AT&T Technical Journal 68, no. 1 (January 2, 1989): 43–52. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00645.x.

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6

Kulchitsky, N. A. "Atomic and Molecular Beams Control in Molecular Beam Epitaxy." Nano- i Mikrosistemnaya Tehnika 23, no. 1 (February 24, 2021): 47–56. http://dx.doi.org/10.17587/nmst.23.47-56.

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Rapid development of molecular beam epitaxy (MBE) in recent decades has led to the emergence of a variety of technological installations, as well as electronic and optical diagnostics of growing layers, as well as atomic and molecular beams. Known methods for monitoring atomic and molecular beams in MBE installations-mass spectrometric and luminescent - involve bulky sensors, which can only be placed in special growth chambers. This paper describes a structurally simple and fairly universal method for determining the intensities of atomic and molecular beams, based on registering the amount of electron scattering at small angles that occur when a narrow electron beam interacts with the atoms of a vaporized substance. We consider the theoretical prerequisites for the diagnosis of an atomic beam by the phenomenon of scattering of fast electrons in it.

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7

Shiraki, Yasuhiro. "Silicon molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 2 (March 1985): 725. http://dx.doi.org/10.1116/1.583126.

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8

Shiraki, Yasuhiro. "Silicon molecular beam epitaxy." Progress in Crystal Growth and Characterization 12, no. 1-4 (January 1986): 45–66. http://dx.doi.org/10.1016/0146-3535(86)90006-7.

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9

Gravesteijn, Dirk J., Gerjan F. A. van De Walle, and Aart A. van Gorkum. "Silicon molecular beam epitaxy." Advanced Materials 3, no. 7-8 (July 1991): 351–55. http://dx.doi.org/10.1002/adma.19910030705.

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10

Curless, Jay A. "Molecular beam epitaxy beam flux modeling." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 2 (March 1985): 531. http://dx.doi.org/10.1116/1.583169.

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11

Li, N. Y., H. K. Dong, C. W. Tu, and M. Geva. "p-Type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxy." Journal of Crystal Growth 150 (May 1995): 246–50. http://dx.doi.org/10.1016/0022-0248(95)80215-x.

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12

Barnett, S. A., J. E. Greene, and J. E. Sundgren. "Ion-beam doping during molecular beam epitaxy." JOM 41, no. 4 (April 1989): 16–19. http://dx.doi.org/10.1007/bf03220192.

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13

Morishita, Y., A. Tsuboi, H. Suzuki, and K. Sato. "Molecular-Beam Epitaxy of AlGaMnAs." Journal of the Magnetics Society of Japan 23, no. 1_2 (1999): 93–95. http://dx.doi.org/10.3379/jmsjmag.23.93.

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14

Panish, M. B., and H. Temkin. "Gas-Source Molecular Beam Epitaxy." Annual Review of Materials Science 19, no. 1 (August 1989): 209–29. http://dx.doi.org/10.1146/annurev.ms.19.080189.001233.

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15

Longenbach, K. F., and W. I. Wang. "Molecular beam epitaxy of GaSb." Applied Physics Letters 59, no. 19 (November 4, 1991): 2427–29. http://dx.doi.org/10.1063/1.106037.

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16

Micovic, M., D. Lubyshev, W. Z. Cai, F. Flack, R. W. Streater, A. J. SpringThorpe, and D. L. Miller. "Iodine-assisted molecular beam epitaxy." Journal of Crystal Growth 175-176 (May 1997): 428–34. http://dx.doi.org/10.1016/s0022-0248(96)00818-4.

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17

Lange, M. D., D. F. Storm, and Teresa Cole. "Molecular-beam epitaxy of InTlAs." Journal of Electronic Materials 27, no. 6 (June 1998): 536–41. http://dx.doi.org/10.1007/s11664-998-0011-9.

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18

Novák, V., M. Cukr, Z. Šobáň, T. Jungwirth, X. Martí, V. Holý, P. Horodyská, and P. Němec. "Molecular beam epitaxy of LiMnAs." Journal of Crystal Growth 323, no. 1 (May 2011): 348–50. http://dx.doi.org/10.1016/j.jcrysgro.2010.11.077.

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19

Zhdanov, V. P., and P. R. Norton. "Nucleation during molecular beam epitaxy." Applied Surface Science 81, no. 2 (October 1994): 109–17. http://dx.doi.org/10.1016/0169-4332(94)90040-x.

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20

Davies, G. J., P. J. Skevington, E. G. Scott, C. L. French, and J. S. Foord. "Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy." Journal of Crystal Growth 107, no. 1-4 (January 1991): 999–1008. http://dx.doi.org/10.1016/0022-0248(91)90593-t.

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21

Miner, C. J. "Wafer-scale temperature mapping for molecular beam epitaxy and chemical beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 3 (May 1993): 998. http://dx.doi.org/10.1116/1.586910.

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22

Tsang, W. T., T. H. Chiu, and R. M. Kapre. "Monolayer chemical beam etching: Reverse molecular beam epitaxy." Applied Physics Letters 63, no. 25 (December 20, 1993): 3500–3502. http://dx.doi.org/10.1063/1.110132.

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23

Kugiyama, Koichi, Yuichi Hirofuji, and Naoto Matsuo. "Si-Beam Radiation Cleaning in Molecular-Beam Epitaxy." Japanese Journal of Applied Physics 24, Part 1, No. 5 (May 20, 1985): 564–67. http://dx.doi.org/10.1143/jjap.24.564.

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24

SARMA, S. DAS. "KINETIC SURFACE ROUGHENING AND MOLECULAR BEAM EPITAXY." Fractals 01, no. 04 (December 1993): 784–94. http://dx.doi.org/10.1142/s0218348x93000812.

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We review recent developments in our understanding of Molecular Beam Epitaxy as a kinetically rough growth phenomenon. It is argued that while the most general growth conditions lead to generic growth universality, actual growth conditions allow a complex interplay of several different dynamic universality classes producing rich crossover behavior determined by growth temperature, incident flux rate, and local solid state physics and chemistry of the growing material. Possible coarse-grained continuum growth equations which may be applicable to Molecular Beam Epitaxy are discussed.

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25

Chatillon, Christian, and J. Massies. "Practical Aspects of Molecular Beam Epitaxy." Materials Science Forum 59-60 (January 1991): 229–86. http://dx.doi.org/10.4028/www.scientific.net/msf.59-60.229.

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26

Franchi, S. "Molecular Beam Epitaxy and Electronic Materials." Key Engineering Materials 58 (January 1991): 149–68. http://dx.doi.org/10.4028/www.scientific.net/kem.58.149.

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27

Tang, Lei-Han, and Thomas Nattermann. "Kinetic roughening in molecular-beam epitaxy." Physical Review Letters 66, no. 22 (June 3, 1991): 2899–902. http://dx.doi.org/10.1103/physrevlett.66.2899.

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28

Pchelyakov, Oleg P. "Molecular beam epitaxy: equipment, devices, technology." Physics-Uspekhi 43, no. 9 (September 30, 2000): 923–25. http://dx.doi.org/10.1070/pu2000v043n09abeh000790.

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29

Brahlek, Matthew, Jason Lapano, and Joon Sue Lee. "Topological materials by molecular beam epitaxy." Journal of Applied Physics 128, no. 21 (December 7, 2020): 210902. http://dx.doi.org/10.1063/5.0022948.

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30

Tsui, Frank, and Liang He. "Techniques for combinatorial molecular beam epitaxy." Review of Scientific Instruments 76, no. 6 (June 2005): 062206. http://dx.doi.org/10.1063/1.1905967.

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31

BLÖMKER, DIRK, STANISLAUS MAIER-PAAPE, and THOMAS WANNER. "SURFACE ROUGHNESS IN MOLECULAR BEAM EPITAXY." Stochastics and Dynamics 01, no. 02 (June 2001): 239–60. http://dx.doi.org/10.1142/s0219493701000126.

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This paper discusses the roughness of surfaces described by nonlinear stochastic partial differential equations on bounded domains. Roughness is an important characteristic for processes arising in molecular beam epitaxy, and is usually described by the mean interface width of the surface, i.e. the expected value of the squared Lebesgue norm. By employing results on the mean interface width for linear stochastic partial differential equations perturbed by colored noise, which have been previously obtained, we describe the evolution of the surface roughness for two classes of nonlinear equations, asymptotically both for small and large times.

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32

Pchelyakov, Oleg P. "Molecular beam epitaxy: equipment, devices, technology." Uspekhi Fizicheskih Nauk 170, no. 9 (2000): 993. http://dx.doi.org/10.3367/ufnr.0170.200009d.0993.

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33

Schlom, Darrell G. "Perspective: Oxide molecular-beam epitaxy rocks!" APL Materials 3, no. 6 (June 2015): 062403. http://dx.doi.org/10.1063/1.4919763.

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34

Tsao, Jeffrey Y., and James P. Harbison. "Materials Fundamentals of Molecular Beam Epitaxy." Physics Today 46, no. 10 (October 1993): 125–26. http://dx.doi.org/10.1063/1.2809075.

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35

Bosch, A. J., R. G. van Welzenis, and O. F. Z. Schannen. "Molecular beam epitaxy of InSb (110)." Journal of Applied Physics 58, no. 9 (November 1985): 3434–39. http://dx.doi.org/10.1063/1.335763.

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36

Delorme, O., L. Cerutti, E. Luna, A. Trampert, E. Tournié, and J. B. Rodriguez. "Molecular-beam epitaxy of GaInSbBi alloys." Journal of Applied Physics 126, no. 15 (October 21, 2019): 155304. http://dx.doi.org/10.1063/1.5096226.

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37

Ozasa, Kazunari, Masaaki Yuri, Shigehisa Tanaka, and Hiroyuki Matsunami. "Metalorganic molecular‐beam epitaxy of InGaP." Journal of Applied Physics 65, no. 7 (April 1989): 2711–16. http://dx.doi.org/10.1063/1.342757.

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38

Villain, Jacques, Alberto Pimpinelli, Leihan Tang, and Dietrich Wolf. "Terrace sizes in molecular beam epitaxy." Journal de Physique I 2, no. 11 (November 1992): 2107–21. http://dx.doi.org/10.1051/jp1:1992271.

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39

Nishinaga, Tatau. "Atomistic aspects of molecular beam epitaxy." Progress in Crystal Growth and Characterization of Materials 48-49 (January 2004): 104–22. http://dx.doi.org/10.1016/j.pcrysgrow.2005.06.002.

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40

Foxon, C. T. "Three decades of molecular beam epitaxy." Journal of Crystal Growth 251, no. 1-4 (April 2003): 1–8. http://dx.doi.org/10.1016/s0022-0248(02)02396-5.

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41

Farrow, R. F. C. "Recent developments in molecular beam epitaxy." Journal of Crystal Growth 104, no. 2 (July 1990): 556–77. http://dx.doi.org/10.1016/0022-0248(90)90158-h.

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42

Michalak, Leszek, and Bogdan Adamczyk. "Light simulation of molecular beam epitaxy." Vacuum 42, no. 12 (January 1991): 735–39. http://dx.doi.org/10.1016/0042-207x(91)90169-j.

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43

Bauer, Günther, and Gunther Springholz. "Molecular beam epitaxy—aspects and applications." Vacuum 43, no. 5-7 (May 1992): 357–65. http://dx.doi.org/10.1016/0042-207x(92)90038-x.

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44

Arthur, John R. "Molecular beam epitaxy of compound semiconductors." Surface Science 299-300 (January 1994): 818–23. http://dx.doi.org/10.1016/0039-6028(94)90699-8.

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45

Krishnamurthy, Srinivasan, M. A. Berding, A. Sher, and A. ‐B Chen. "Energetics of molecular‐beam epitaxy models." Journal of Applied Physics 68, no. 8 (October 15, 1990): 4020–28. http://dx.doi.org/10.1063/1.346238.

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46

Moktadir, Z. "Scale decomposition of molecular beam epitaxy." Journal of Physics: Condensed Matter 20, no. 23 (May 13, 2008): 235240. http://dx.doi.org/10.1088/0953-8984/20/23/235240.

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47

Wang, G., S. K. Lok, G. K. L. Wong, and I. K. Sou. "Molecular beam epitaxy-grown Bi4Te3 nanowires." Applied Physics Letters 95, no. 26 (December 28, 2009): 263102. http://dx.doi.org/10.1063/1.3276071.

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48

Duport, Christophe, Philippe Nozières, and Jacques Villain. "New Instability in Molecular Beam Epitaxy." Physical Review Letters 74, no. 1 (January 2, 1995): 134–37. http://dx.doi.org/10.1103/physrevlett.74.134.

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49

Bean, John C. "Silicon molecular beam epitaxy: 1984–1986." Journal of Crystal Growth 81, no. 1-4 (February 1987): 411–20. http://dx.doi.org/10.1016/0022-0248(87)90426-x.

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50

Chan, S. K., N. Liu, Y. Cai, N. Wang, G. K. L. Wong, and I. K. Sou. "Molecular beam epitaxy—Grown ZnSe nanowires." Journal of Electronic Materials 35, no. 6 (June 2006): 1246–50. http://dx.doi.org/10.1007/s11664-006-0249-z.

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