Journal articles on the topic 'MIS devices'
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Hawasli, Ammar H., Jawad M. Khalifeh, Ajay Chatrath, Chester K. Yarbrough, and Wilson Z. Ray. "Minimally invasive transforaminal lumbar interbody fusion with expandable versus static interbody devices: radiographic assessment of sagittal segmental and pelvic parameters." Neurosurgical Focus 43, no. 2 (August 2017): E10. http://dx.doi.org/10.3171/2017.5.focus17197.
Full textAl-Begg, S. M., S. H. Saeed, and A. S. Al-Rawas. "Thermal annealing effects on the electrical characteristics of alpha particles irradiated MIS device AuTa2O5GaAs." Journal of Ovonic Research 19, no. 4 (July 2023): 359–67. http://dx.doi.org/10.15251/jor.2023.194.359.
Full textZhang, Xiaodong, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan, et al. "Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric." Electronics 11, no. 6 (March 13, 2022): 895. http://dx.doi.org/10.3390/electronics11060895.
Full textEngstrom, O., and A. Carlsson-Gylemo. "MIS Devices for optical information processing." IEEE Transactions on Electron Devices 32, no. 11 (November 1985): 2438–40. http://dx.doi.org/10.1109/t-ed.1985.22292.
Full textMoriwaki, M. M., J. R. Srour, L. F. Lou, and J. R. Waterman. "Ionizing radiation effects on HgCdTe MIS devices." IEEE Transactions on Nuclear Science 37, no. 6 (1990): 2034–41. http://dx.doi.org/10.1109/23.101226.
Full textTardy, J., I. Thomas, P. Viktorovitch, M. Gendry, J. L. Perrossier, C. Santinelli, M. P. Besland, P. Louis, and G. Post. "Long-term stability of InP MIS devices." Applied Surface Science 50, no. 1-4 (June 1991): 383–89. http://dx.doi.org/10.1016/0169-4332(91)90203-v.
Full textHynecek, Jaroslav. "4455739 Process protection for individual device gates on large area MIS devices." Microelectronics Reliability 25, no. 1 (January 1985): 204. http://dx.doi.org/10.1016/0026-2714(85)90469-x.
Full textPreuveneers, D., and Y. Berbers. "Encoding Semantic Awareness in Resource-Constrained Devices." IEEE Intelligent Systems 23, no. 2 (March 2008): 26–33. http://dx.doi.org/10.1109/mis.2008.25.
Full textRagusa, Edoardo, Christian Gianoglio, Rodolfo Zunino, and Paolo Gastaldo. "Image Polarity Detection on Resource-Constrained Devices." IEEE Intelligent Systems 35, no. 6 (November 1, 2020): 50–57. http://dx.doi.org/10.1109/mis.2020.3011586.
Full textHsu, Che-Ching, Pei-Chien Shen, Yi-Nan Zhong, and Yue-Ming Hsin. "AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer." MRS Advances 3, no. 3 (December 28, 2017): 143–46. http://dx.doi.org/10.1557/adv.2017.626.
Full textAlhalafi, Z. H., and Shashi Paul. "Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture." Advances in Science and Technology 95 (October 2014): 107–12. http://dx.doi.org/10.4028/www.scientific.net/ast.95.107.
Full textMabrook, Mohammed Fadhil, Daniel Kolb, Christopher Pearson, D. A. Zeze, and M. C. Petty. "Fabrication and Characterisation of MIS Organic Memory Devices." Advances in Science and Technology 54 (September 2008): 474–79. http://dx.doi.org/10.4028/www.scientific.net/ast.54.474.
Full textZayats, Galina. "Modeling of Radiation Effects in the MIS Devices." American Journal of Nano Research and Applications 5, no. 1 (2017): 7. http://dx.doi.org/10.11648/j.nano.20170501.12.
Full textMoriwaki, M. M., J. R. Srour, and R. L. Strong. "Charge transport and trapping in HgCdTe MIS devices." IEEE Transactions on Nuclear Science 39, no. 6 (1992): 2265–72. http://dx.doi.org/10.1109/23.211432.
Full textYoo, Jae-Hoon, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm, and Hee-Chul Lee. "Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices." Nanomaterials 13, no. 11 (June 1, 2023): 1785. http://dx.doi.org/10.3390/nano13111785.
Full textLee, Chwan Ying, Yung Hsiang Chen, Lurng Shehng Lee, Chien Chung Hung, Cheng Tyng Yen, Suh Fang Lin, Rong Xuan, Wei Hung Kuo, Tzu Kun Ku, and Ming Jinn Tsai. "Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues." Materials Science Forum 717-720 (May 2012): 1303–6. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1303.
Full textSpirrov, Dimitar, Eugen Kludt, Eline Verschueren, Andreas Büchner, and Tom Francart. "Effect of (Mis)Matched Compression Speed on Speech Recognition in Bimodal Listeners." Trends in Hearing 24 (January 2020): 233121652094897. http://dx.doi.org/10.1177/2331216520948974.
Full textChakraborty, B. R., Nita Dilawar, S. Pal, and D. N. Bose. "SIMS characterization of GaAs MIS devices at the interface." Thin Solid Films 411, no. 2 (May 2002): 240–46. http://dx.doi.org/10.1016/s0040-6090(02)00277-8.
Full textHordequin, C., A. Brambilla, P. Bergonzo, and F. Foulon. "Nuclear radiation detectors using thick amorphous-silicon MIS devices." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 456, no. 3 (January 2001): 284–89. http://dx.doi.org/10.1016/s0168-9002(00)00575-1.
Full textKim, Seong-Il, Ho-Kyun Ahn, Jong-Won Lim, and Kijun Lee. "GaN MIS-HEMT PA MMICs for 5G Mobile Devices." Journal of the Korean Physical Society 74, no. 2 (January 2019): 196–200. http://dx.doi.org/10.3938/jkps.74.196.
Full textAndreev, D. V., G. G. Bondarenko, V. V. Andreev, V. M. Maslovsky, and A. A. Stolyarov. "Modification of MIS Devices by Radio-Frequency Plasma Treatment." Acta Physica Polonica A 136, no. 2 (August 2019): 263–66. http://dx.doi.org/10.12693/aphyspola.136.263.
Full textRuff, Katherine. "How impact measurement devices act: the performativity of theory of change, SROI and dashboards." Qualitative Research in Accounting & Management 18, no. 3 (January 22, 2021): 332–60. http://dx.doi.org/10.1108/qram-02-2019-0041.
Full textYo-Ping Huang and Tienwei Tsai. "A Fuzzy Semantic Approach to Retrieving Bird Information Using Handheld Devices." IEEE Intelligent Systems 20, no. 1 (January 2005): 16–23. http://dx.doi.org/10.1109/mis.2005.1.
Full textHerrero, Jose Luis, Jesus Lozano, Jose Pedro Santos, J. Alvaro Fernandez, and Jose Ignacio Suarez Marcelo. "A Web-Based Approach for Classifying Environmental Pollutants Using Portable E-nose Devices." IEEE Intelligent Systems 31, no. 3 (May 2016): 108–12. http://dx.doi.org/10.1109/mis.2016.48.
Full textDoghish, M. Y., and F. D. Ho. "A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices." IEEE Transactions on Electron Devices 39, no. 12 (1992): 2771–80. http://dx.doi.org/10.1109/16.168723.
Full textBenamara, Z., and B. Gruzza. "Preparation and characterization of germanium substrates for MIS electronic devices." Vacuum 46, no. 5-6 (May 1995): 477–80. http://dx.doi.org/10.1016/0042-207x(94)00110-3.
Full textPerina, Welder, Joao Martino, and Paula Agopian. "(Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region." ECS Meeting Abstracts MA2023-01, no. 33 (August 28, 2023): 1873. http://dx.doi.org/10.1149/ma2023-01331873mtgabs.
Full textŤapajna, Milan. "Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications." Crystals 10, no. 12 (December 18, 2020): 1153. http://dx.doi.org/10.3390/cryst10121153.
Full textВойцеховский, А. В., С. Н. Несмелов, С. М. Дзядух, С. А. Дворецкий, Н. Н. Михайлов, Г. Ю. Сидоров, and М. В. Якушев. "Aдмиттанс МДП-структур на основе nBn-систем из эпитаксиального HgCdTe, разработанных для детектирования в спектральном диапазоне 3-5 μm." Письма в журнал технической физики 47, no. 12 (2021): 34. http://dx.doi.org/10.21883/pjtf.2021.12.51065.18760.
Full textNoborio, Masato, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, and Tsunenobu Kimoto. "Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices." Materials Science Forum 645-648 (April 2010): 825–28. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.825.
Full textSaranti, Konstantina, and Shashi Paul. "Two-Terminal Non-Volatile Memory Devices Using Silicon Nanowires as the Storage Medium." Advances in Science and Technology 95 (October 2014): 78–83. http://dx.doi.org/10.4028/www.scientific.net/ast.95.78.
Full textVispute, R. D., A. Patel, K. Baynes, B. Ming, R. P. Sharma, T. Venkatesan, C. J. Scozzie, A. Lelis, T. Zheleva, and K. A. Jones. "Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 591–97. http://dx.doi.org/10.1557/s1092578300004804.
Full textKhosa, R. Y., J. T. Chen, M. Winters, K. Pálsson, R. Karhu, J. Hassan, N. Rorsman, and E. Ö. Sveinbjӧrnsson. "Electrical characterization of high k-dielectrics for 4H-SiC MIS devices." Materials Science in Semiconductor Processing 98 (August 2019): 55–58. http://dx.doi.org/10.1016/j.mssp.2019.03.025.
Full textRouag, N., Z. Ouennoughi, M. Rommel, K. Murakami, and L. Frey. "Current conduction mechanism of MIS devices using multidimensional minimization system program." Microelectronics Reliability 55, no. 7 (June 2015): 1028–34. http://dx.doi.org/10.1016/j.microrel.2015.05.001.
Full textMohanbabu, A., R. Saravana Kumar, and N. Mohankumar. "Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices." Superlattices and Microstructures 112 (December 2017): 604–18. http://dx.doi.org/10.1016/j.spmi.2017.10.020.
Full textLichtenwalner, Daniel J., Jesse Jur, Naoya Inoue, and Angus Kingon. "High-Temperature Processing Effects on Lanthanum Silicate Gate Dielectric MIS Devices." ECS Transactions 1, no. 5 (December 21, 2019): 227–38. http://dx.doi.org/10.1149/1.2209272.
Full textXia, Yongwei, Georges Pananakakis, and Georges Kamarinos. "Numerical simulation of the current-voltage characteristics of MIS tunnel devices." Journal of Computational Physics 91, no. 2 (December 1990): 478–85. http://dx.doi.org/10.1016/0021-9991(90)90049-7.
Full textEvans, N. J., G. G. Roberts, and M. C. Petty. "Effects of hydrogen gas on palladium/LB film/silicon MIS devices." Sensors and Actuators 16, no. 3 (March 1989): 255–61. http://dx.doi.org/10.1016/0250-6874(89)87007-6.
Full textCheng, Wei-Chih, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang, and Hongyu Yu. "Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications." Journal of Vacuum Science & Technology B 40, no. 2 (March 2022): 022212. http://dx.doi.org/10.1116/6.0001654.
Full textLin, Shawn R., and Kevin M. Miller. "Lessons Learned from Implantation of Morcher 50D and 96S Artificial Iris Diaphragms." Case Reports in Ophthalmology 8, no. 3 (November 23, 2017): 527–34. http://dx.doi.org/10.1159/000484128.
Full textYoon, Young Jun, Jae Sang Lee, Jae Kwon Suk, In Man Kang, Jung Hee Lee, Eun Je Lee, and Dong Seok Kim. "Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment." Micromachines 12, no. 8 (July 23, 2021): 864. http://dx.doi.org/10.3390/mi12080864.
Full textHosoi, Takuji, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, and Heiji Watanabe. "Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices." Materials Science Forum 679-680 (March 2011): 496–99. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.496.
Full textCalzolaro, Anthony, Thomas Mikolajick, and Andre Wachowiak. "Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices." Materials 15, no. 3 (January 21, 2022): 791. http://dx.doi.org/10.3390/ma15030791.
Full textTyan, Shing-Long, Hsiang-Chi Tang, Zhang-Wei Wu, and Ting-Shan Mo. "Diamond-like carbon as gate dielectric for metal–insulator–semiconductor applications." Modern Physics Letters B 33, no. 34 (December 10, 2019): 1950423. http://dx.doi.org/10.1142/s0217984919504232.
Full textFerguson, P. P., S. Gauvin, and N. Beaudoin. "On the importance of the MIS junction to the photovoltaic properties of ITO/TPD/Alq3/Al electroluminescent devices." Canadian Journal of Physics 91, no. 1 (January 2013): 60–63. http://dx.doi.org/10.1139/cjp-2012-0113.
Full textKeymel, Stefanie. "COVID-19: Wann muss ich an MIS-A denken?" Kompass Pneumologie 10, no. 1 (November 30, 2021): 15–16. http://dx.doi.org/10.1159/000521061.
Full textAddepalli, Suresh. "Annealing temperature influenced physical properties of Al2TiO5 thin films for MIS devices." Advanced Materials Proceedings 2, no. 3 (March 1, 2017): 189–93. http://dx.doi.org/10.5185/amp.2017/3011.
Full textVoitsekhovskii, A. V., and et al. "Impedance of MIS devices based on nBn structures from mercury cadmium telluride." Izvestiya vysshikh uchebnykh zavedenii. Fizika 63, no. 6 (June 1, 2020): 8–15. http://dx.doi.org/10.17223/00213411/63/6/8.
Full textAndreev, D. V., G. G. Bondarenko, V. V. Andreev, V. M. Maslovsky, and A. A. Stolyarov. "Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments." Acta Physica Polonica A 132, no. 2 (August 2017): 245–48. http://dx.doi.org/10.12693/aphyspola.132.245.
Full textVuillaume, D., P. Fontaine, J. Collet, D. Deresmes, M. Garet, and F. Rondelez. "Alkyl-trichlorosilane monolayer as ultra-thin insulating film for silicon MIS devices." Microelectronic Engineering 22, no. 1-4 (August 1993): 101–4. http://dx.doi.org/10.1016/0167-9317(93)90140-z.
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