Academic literature on the topic 'Mid-infrared light'

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Journal articles on the topic "Mid-infrared light"

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Biegert, Jens, Philip K. Bates, and Olivier Chalus. "New Mid-Infrared Light Sources." IEEE Journal of Selected Topics in Quantum Electronics 18, no. 1 (January 2012): 531–40. http://dx.doi.org/10.1109/jstqe.2011.2135842.

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Jumpertz, Louise, Kevin Schires, Mathieu Carras, Marc Sciamanna, and Frédéric Grillot. "Chaotic light at mid-infrared wavelength." Light: Science & Applications 5, no. 6 (January 29, 2016): e16088-e16088. http://dx.doi.org/10.1038/lsa.2016.88.

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Muhowski, Aaron J., Abhilasha Kamboj, Noah C. Mansfield, and Daniel Wasserman. "Mid-infrared rainbow light-emitting diodes." Applied Physics Letters 121, no. 26 (December 26, 2022): 261105. http://dx.doi.org/10.1063/5.0129196.

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We demonstrate a room-temperature all-epitaxial guided-mode resonance light-emitting diode operating in the mid-wave infrared. The device comprises a dielectric waveguide with an AlGaAsSb [Formula: see text] diode core, below a layer of grating-patterned GaSb and above a highly doped, and thus, low index, InAsSb layer. Light emitted from the device active region into propagating modes in the waveguide scatters into free space via the GaSb grating, giving rise to spectrally narrow features that shift with emission angle across much of the mid-wave infrared. For collection angles approaching [Formula: see text], we are able to obtain linewidths of ∼2.4 meV across the spectral/angular emission of the LED, corresponding to [Formula: see text]. Fine control of emission wavelength can be achieved by tuning the applied current, which causes a redshift of approximately 20 nm due to the thermo-optic effect. The presented device has the potential for use in compact, high bandwidth, and low-cost mid-wave infrared sensing applications requiring spectral discrimination.
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Hou, Chun-Cai, Hong-Mei Chen, Jin-Chuan Zhang, Ning Zhuo, Yuan-Qing Huang, Richard A. Hogg, David TD Childs, et al. "Near-infrared and mid-infrared semiconductor broadband light emitters." Light: Science & Applications 7, no. 3 (December 7, 2017): 17170. http://dx.doi.org/10.1038/lsa.2017.170.

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Huang, Nan, Hongjun Liu, Zhaolu Wang, Jing Han, and Shuan Zhang. "Femtowatt incoherent image conversion from mid-infrared light to near-infrared light." Laser Physics 27, no. 3 (January 23, 2017): 035401. http://dx.doi.org/10.1088/1555-6611/aa57db.

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Gordon, Reuven. "Room-temperature mid-infrared detectors." Science 374, no. 6572 (December 3, 2021): 1201–2. http://dx.doi.org/10.1126/science.abm4252.

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Herrmann, Eric, Hua Gao, Zhixiang Huang, Sai Rahul Sitaram, Ke Ma, and Xi Wang. "Modulators for mid-infrared and terahertz light." Journal of Applied Physics 128, no. 14 (October 14, 2020): 140903. http://dx.doi.org/10.1063/5.0025032.

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Sun, Jialin, Chuncai Hou, Jinchuan Zhang, Ning Zhuo, Hongmei Chen, Jiqiang Ning, Zhanguo Wang, Fengqi Liu, and Ziyang Zhang. "Mid-infrared broadband superluminescent light emitter arrays." Optics Letters 43, no. 20 (October 15, 2018): 5150. http://dx.doi.org/10.1364/ol.43.005150.

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Haigh, M. K., G. R. Nash, S. J. Smith, L. Buckle, M. T. Emeny, and T. Ashley. "Mid-infrared AlxIn1−xSb light-emitting diodes." Applied Physics Letters 90, no. 23 (June 4, 2007): 231116. http://dx.doi.org/10.1063/1.2745256.

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Ricker, R. J., S. R. Provence, D. T. Norton, T. F. Boggess, and J. P. Prineas. "Broadband mid-infrared superlattice light-emitting diodes." Journal of Applied Physics 121, no. 18 (May 14, 2017): 185701. http://dx.doi.org/10.1063/1.4983023.

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Dissertations / Theses on the topic "Mid-infrared light"

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Mirza, Benjamin Imran. "Mid-infrared INSb/A1InSb light-emitting diodes." Thesis, University of Bristol, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.503928.

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Electrical and optical properties of bulk and quantum-well (QW) InSb/AlˣIn₁-ˣSb midinfrared light-emitting diodes (LEDs) have been investigated as a function of temperature and injection current. Measured current-voltage characteristics are rectifying across all temperatures and aluminium compositions for each of the devices. For the QWLEDs, experimentally measured emission spectra are compared to the theoretical equivalent, enabling individual optical transitions in the QW to be attributed to observable features.
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Gevaux, David Graham. "Spectroscopic study of mid-infrared light emitting diodes." Thesis, Imperial College London, 2003. http://hdl.handle.net/10044/1/8253.

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Nshii, Chidi Christopher. "Tunable mid-infrared light sources based on intersubband transitions." Thesis, University of Glasgow, 2011. http://theses.gla.ac.uk/2603/.

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This thesis describes how for the first time, unidirectional operation and coupled ring tuning were realised on a quantum cascade laser material; specifically on a new strain compensated In0.7Ga0.3As/AlAs0.6Sb0.4 grown on InP substrate and operates in pulsed mode in the 3-4 micron hydrocarbon absorption region. Unidirectional ring lasers have the advantages that, in the favoured emission direction, they can have up to double the quantum efficiency of bidirectional lasers and do not suffer from spatial hole burning. In this work, this operation was realised by incorporating an "S"-crossover waveguide into the ring cavity in a manner that it introduces non reciprocal loss and gain in the counter-clockwise (CCW) and clockwise (CW) directions respectively. The measured result showed higher quantum efficiency in the CW. In fact at 1.5 times the threshold current, 90 % of the light was emitted in the favoured CW. On the other hand, the coupled ring quantum cascade laser showed nearly single mode operation, with side mode suppression ratio ~22 dB. Continuous wavelength tuning of about 13 nm was observed from one of these devices, at a tuning rate of approximately 0.4 nm/mA.
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Mannheim, Volker Paul. "The characterisation and evaluation of mid-infrared, light-emitting diodes." Thesis, Heriot-Watt University, 1998. http://hdl.handle.net/10399/652.

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Batty, Peter James. "Characterisation of 5-component alloys for mid-infrared light emitting diodes." Thesis, Lancaster University, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.543966.

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Hayton, Jonathan Paul. "Development of mid-infrared light emitting diodes to replace incandescent airfield lighting." Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/86080/.

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This work studied the replacement of incandescent airfield lighting systems with light emitting diodes. The focus was on the replacement of the infrared component of the incandescent spectra. A series of LEDs with a variety of nanostructures in different material systems were produced and tested to determine their suitability in replacing incandescent airfield lighting systems. Utilising quantum dashes in the active region, a surface emitting LED achieved an output power of 1.2mW at 1.97 um. This device had a wall-plug efficiency of 0.7%, an efficiency greater than that obtained in comparable commercially available surface emitting devices. The output power of this device was limited by the connement of electrons within the quantum dashes at room temperature. Another device characterised in this study was an LED with sub-monolayer InSb/GaSb quantum dots in the active region. The sub-monolayer InSb quantum dots were grown at Lancaster on GaSb substrates using molecular beam epitaxy and fabricated into surface emitting LEDs. These were investigated using x-ray diffraction, transmission electron microscopy and electroluminescence. This is the first reported electroluminescence from such devices. Emission was measured at temperatures up to 250 K. Room temperature emission was from the quantum wells in which the quantum dots where grown, output power was 80 uW at a wavelength of 1.66 um. Further devices with InSb sub-monolayer insertions were fabricated into edge emitting diodes. These samples were grown on GaAs using interfacial misfit arrays, defect densities were reduced through the use of defect filtering layers. The threading dislocation density decreased by a factor of 6 from 2.5x10^9/cm^2 to 4x10^8/cm^2 between the bottom and top of the defect filtering layer. The edge emitting devices achieved lasing up to 200 K with a characteristic temperature of 150 K. These devices were limited by Shockley-Read-Hall recombination and weak confinement of carriers within the InSb regions. The inclusion of AlGaSb barriers improved room temperature operation with output power increasing from 2 uW to 42 uW. In addition, increased confinement also resulted in a decrease in peak wavelength from 2.01um to 1.81um. GaInSb quantum well samples were produced on GaAs substrates utilising an interfacial misfit array. This included the first reported instances of ternary inter-facial misfit array interfaces with threading dislocation densities of < 2 x 10^9/cm^2 for an AlGaSb/GaAs interface and 5 x 10^10/cm^2 for an InAlSb/GaAs interface. By utilising an AlGaSb interfacial misfit array it was possible to improve the confinement of carriers within the GaInSb quantum wells, resulting in a twenty fold increase in room temperature photoluminescence intensity.
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Meriggi, Laura. "Antimonide-based mid-infrared light-emitting diodes for low-power optical gas sensors." Thesis, University of Glasgow, 2015. http://theses.gla.ac.uk/6691/.

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The 3-5 μm mid-infrared spectral region is of great interest as it contains the fundamental molecular fingerprints of a number of pollutants and toxic gases, which require remote real-time monitoring in a variety of applications. Consequently, the development of efficient optoelectronic devices operating in this wavelength range is a very fascinating and pertinent research. In recent years, there has been a rapid development of optical technologies for the detection of carbon dioxide (CO2), where the detected optical intensity at the specific gas absorption wavelength of 4.26 μm is a direct indication of the gas concentration, the main applications being in indoor air quality control and ventilation systems. The replacement of conventional infrared thermal components with high performance semiconductor light-emitting diodes (LEDs) and photodiodes in the 3-5 μm range allows to obtain sensors with similar sensitivity, but with an intrinsic wavelength selectivity, reduced power consumption and faster response. Gas Sensing Solutions Ltd. has developed a commercial CO2 optical gas sensor equipped with an AlInSb-based LED and photodiode pair, which has demonstrated a significant reduction in the energy consumption per measurement. The aim of this Ph.D. project, supported by an EPSRC Industrial CASE Studentship, was to improve the performance of mid-infrared AlInSb LEDs. This was achieved through the optimisation of the layer structure and the device design, and the application of different techniques to overcome the poor extraction efficiency (~ 1 %) which limits the LED performance, as a consequence of total-internal reflection and Fresnel reflection. A key understanding was gained on the electrical and optical properties of AlInSb LEDs through the characterisation of the epi-grown material and the fabrication of prototype devices. Improved LED performance, with a lower series resistance and stronger light emission, was achieved thanks to the analysis of a number of LED design parameters, including the doping concentration of the contact layers, the LED lateral dimensions and the electrode contact geometry. A Resonant-Cavity LED structure was designed, with the integration of an epitaxially-grown distributed Bragg reflector between the substrate and the LED active region. The advantage of this design is twofold, as it both redirects the light emitted towards the substrate in the direction of the top LED surface and adds a resonant effect to the structure, resulting in a three-times higher extraction efficiency at the target wavelength of 4.26 μm, spectral narrowing and improved temperature stability. Finally, 2D-periodic metallic hole array patterns were integrated on AlInSb LEDs, showing potential advantages for spectral filtering and enhanced extraction of light emitted above the critical angle.
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Koerperick, Edwin John Boggess Thomas F. Prineas John P. "High power mid-wave and long-wave infrared light emitting diodes device growth and applications /." Iowa City : University of Iowa, 2009. http://ir.uiowa.edu/etd/304.

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Hardaway, Harvey Royston. "Spectroscopic studies of InAs/InAsSb heterostructure light-emitting diodes for the mid-infrared region." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.322199.

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Vigneron, Pierre-Baptiste. "Mid-Infrared Detectors and THz Devices Operating in the Strong Light-Matter Coupling Regime." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS082/document.

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Les polaritons inter-sous-bandes, observés pour la première fois il y a une quinzaine d’années, sont des quasi-particules dont de nombreuses propriétés restent encore à découvrir. La recherche dans ce domaine se focalise actuellement sur la réalisation de condensats de Bose-Einstein. Une telle découverte pourrait révolutionner l’optoélectronique du moyen infra-rouge jusqu’au THz ouvrant la voie à l’instauration de nouveaux concepts de sources lumineuses,de détecteurs ou de systèmes logiques en couplage fort. Dans cette quête, le choix de la cavité résonnante est critique. Dans ce manuscrit nous proposons d’utiliser des cavités métal-isolant-métal (M-I-M) avec un réseau dispersif sur le métal supérieur. Ce type de cavité,conservant un confinement élevé entre les deux plans métalliques, offre de nombreuses possibilités d’ajustement de la résonance de cavité : via la géométrie de la cavité ( épaisseur de la cavité, période et recouvrement du réseau) ainsi que par le couplage de la lumière avec la cavité (vecteur d’onde incident). Les cavités M-I-M dispersives ouvrent donc un nouveau champ d’exploration des polaritons inter-sous-bande. Dans un premier temps nous avons introduit ces cavités dans le domaine du THz afin d’étudier les phénomènes de relaxation polariton-polariton. Un système expérimental dédié à cette exploration a été conçu pour mesurer la réflectivité des polaritons THz avec une fine résolution en angle. Dans une second temps, des capteurs moyen infrarouge en couplage fort avec une cavité M-I-M dispersive ont été conçus, fabriqués et mesurés dans le but d’explorer la génération de photo-courant à partir de polaritons et d’utiliser le couplage fort pour dissocier l’ énergie de détection de l’énergie d’activation. Cette seconde étude s’inscrit dans l’objectif de pompage électrique des polaritons ISB. Parallèlement à l’étude des polaritons, nous avons également participé au développement de techniques(interféromètre Gires-Tournois et revêtement anti-réflection) pour compresser les impulsions optiques de lasers à cascade quantique THz
After fifteen years of intersubband polaritons development some of the peculiar properties of these quasi-particles are still unexplored. A deeper comprehension of the polaritons is needed to access their fundamental properties and assess their applicative potential as efficient emitters or detectors in the mid-infrared and THz.In this manuscript we used Metal-Insulator-Metal (MI-M) cavities with a top metal periodic grating as a platform to deepen the understanding of ISB polaritons.The advantages of M-I-M are twofold : first they confine the TM00 mode, second the dispersion of the cavity -over a large set of in-plane wave-vectors- offers various experimental configurations to observe the polaritons in both reflection and photo-current. We reexamined the properties of ISB polaritons in the mid-infrared and in the THz using these resonators. In the first part, we explore the implementation of dispersive M-I-M cavities with THz intersubband transitions. In the THz domain, the scattering mechanisms of the THz ISB polaritons need to be understood. The dispersive cavity is a major asset to study these mechanisms because it provides more degrees of freedom to the system. For this purpose, we fabricated a new experimental set-up to measure the polariton dispersion at liquid Helium temperature. After the characterization of the polaritons in reflectivity, a pump-probe experiment was performed on the polaritonic devices. The second part of this manuscript presents the implementation of M-I-M dispersive cavities with abound-to-quasi-bound quantum well infrared photo detector designed to detect in strong coupling. Beyond electrical probing of the polaritons, the strong coupling can disentangle the frequency of detection from the thermal activation energy and reduce the dark current at a given frequency. In parallel to the exploration of THz polaritons, we developed two techniques (Gires-Tournois Interferometer and Anti-reflection coating) in order to shorten the pulses of THz quantum cascade lasers with metal-metal waveguides
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Books on the topic "Mid-infrared light"

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Martin, Francis L., and Hubert M. Pollock. Microspectroscopy as a tool to discriminate nanomolecular cellular alterations in biomedical research. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.8.

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This article considers the use of microspectroscopy for discriminating nanomolecular cellular alterations in biomedical research. It begins with an overview of some existing mid-infrared microspectroscopy techniques, including FTIR microspectroscopy and Raman microspectroscopy. It then discusses near-field techniques such as scanning near-field optical microscopy, near-field Raman microscopy, and photothermal microspectroscopy (PTMS). It also examines promising alternative sources of IR light, possible advantages of using normal atomic force microscopy probes, experimental procedures for PTMS, and prospects for high spatial resolution in near-field FTIR spectroscopy. Finally, it describes the spectroscopic detection of small particles, along with the use of the analysis paradigm to discriminate nanomolecular cellular alterations in biomedical research.
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Vurgaftman, Igor, Matthew P. Lumb, and Jerry R. Meyer. Bands and Photons in III-V Semiconductor Quantum Structures. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198767275.001.0001.

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Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader does not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader’s understanding. A substantial fraction of the material in this book has not appeared in print anywhere else, including journal publications.
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Book chapters on the topic "Mid-infrared light"

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Aitken, D. K., P. F. Roche, and C. Smith. "Mid Infrared Spectroscopy of IRAS Bright Galaxies." In Light on Dark Matter, 435–36. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4672-9_91.

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Beck, Sara C. "Mid-infrared Lines as Astrophysical Diagnostics: Two Decades of Problems and Promise." In Amazing Light, 21–26. New York, NY: Springer New York, 1996. http://dx.doi.org/10.1007/978-1-4612-2378-8_3.

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Seidel, Marcus. "From the Near- to the Mid-Infrared." In A New Generation of High-Power, Waveform Controlled, Few-Cycle Light Sources, 153–200. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-10791-8_4.

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Bleuse, J., E. Hadji, N. Magnea, and J. L. Pautrat. "II-VI Resonant Cavity Light Emitting Diodes for the Mid-Infrared." In Microcavities and Photonic Bandgaps: Physics and Applications, 353–62. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0313-5_33.

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Lauterwasser, C., P. Hamm, M. Zurek, and W. Zinth. "Tunable Subpicosecond Light Pulses in the Mid Infrared Produced by Difference Frequency Generation." In Laser in der Technik / Laser in Engineering, 828–31. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-662-08251-5_179.

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Sonobe, Taro, Mahmoud Bakr, Kyohei Yoshida, Kan Hachiya, Toshiteru Kii, and Hideaki Ohgaki. "New Material Processing and Evaluation for TiO2 by Microwave and Mid-Infrared Light Techniques." In Zero-Carbon Energy Kyoto 2009, 46–52. Tokyo: Springer Japan, 2010. http://dx.doi.org/10.1007/978-4-431-99779-5_6.

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Krier, A., E. Repiso, F. Al-Saymari, P. J. Carrington, A. R. J. Marshall, L. Qi, S. E. Krier, et al. "Mid-infrared light-emitting diodes." In Mid-infrared Optoelectronics, 59–90. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-08-102709-7.00002-4.

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Elu, Ugaitz, Luke Maidment, Lenard Vamos, Francesco Tani, David Novoa, Michael H. Frosz, Valeriy Badikov, et al. "Extreme temporal compression of ultra-broadband mid-infrared pulses." In Light Filaments: Structures, challenges and applications, 103–15. Institution of Engineering and Technology, 2021. http://dx.doi.org/10.1049/sbew527e_ch4.

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Igor, Vurgaftman. "Interband Semiconductor Lasers and LEDs." In Bands and Photons in III-V Semiconductor Quantum Structures, 421–90. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198767275.003.0012.

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This chapter discusses the operation of conventional diode lasers based on quantum wells and quantum dots as a function of emission wavelength. The recombination processes that control the threshold current density of the devices are described in detail, including recombination at defects, radiative, and Auger recombination. The high-speed modulation and spectral characteristics of semiconductor lasers are also discussed. It continues by illustrating why interband cascade lasers can outperform diode lasers at mid-infrared wavelengths and describing their design and operating characteristics in detail. On the short-wavelength side of the spectrum, the nitride lasers and the factors that limit their performance are discussed. In addition to lasers, the principles underlying light-emitting diodes (LEDs) are outlined, and the proposed mechanisms for improving the extraction of the light from high-index semiconductor materials are described. The chapter concludes with a discussion of the performance of semiconductor optical amplifiers designed to amplify a weak input signal.
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Conference papers on the topic "Mid-infrared light"

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Elu, U., L. Maidment, L. Vamos, F. Tani, D. Novoa, M. H. Frosz, V. Badikov, et al. "High-brightness CEP-stable light source with coverage from 340 nm to 40,000 nm." In Mid-Infrared Coherent Sources. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/mics.2022.mth5c.4.

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Kanai, T., P. Malevich, S. S. Kangaparambil, H. Hoogland, R. Holzwarth, A. Pugžlys, and A. Baltuška. "White Light Seeded Broadband 6-µm Parametric Amplifier System Driven by a Sub-ps Ho:YAG Chirped Pulse Amplifier." In Mid-Infrared Coherent Sources. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/mics.2016.ms4c.2.

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Hoffman, Anthony J., Leonid Alekseyev, Evgenii E. Narimanov, Claire Gmachl, and Deborah L. Sivco. "Negative Refraction in a Semiconductor Metamaterial in the Mid-Infrared." In Slow and Fast Light. Washington, D.C.: OSA, 2008. http://dx.doi.org/10.1364/sl.2008.stua2.

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Ashik, A. S., Peter Tidemand-Lichtenberg, and Christian Pedersen. "Design and development of a low-cost tunable midinfrared light source based on single pass optical parametric generation in a quasi-phase-matched lithium niobate crystal." In Mid-Infrared Coherent Sources. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/mics.2020.mth1c.7.

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Kotkov, A. A., O. V. Budilova, A. A. Ionin, I. O. Kinyaevskiy, Yu M. Klimachev, and A. Yu Kozlov. "“White light” mid-infrared gas laser systems." In 2016 International Conference Laser Optics (LO). IEEE, 2016. http://dx.doi.org/10.1109/lo.2016.7549686.

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Millar, R. W., D. C. S. Dumas, K. Gallacher, P. Jahandar, M. Myronov, and D. J. Paul. "Tensile strained GeSn mid-infrared light emitters." In 2017 IEEE 14th International Conference on Group IV Photonics (GFP). IEEE, 2017. http://dx.doi.org/10.1109/group4.2017.8082190.

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Weik, F., B. Spellenberg, M. Bassler, J. W. Tomm, R. Glatthaar, U. Vetter, J. Konig, et al. "A novel mid-infrared light emitting device." In 2005 Conference on Lasers and Electro-Optics (CLEO). IEEE, 2005. http://dx.doi.org/10.1109/cleo.2005.201773.

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Montealegre, David A., Matt Bellus, Alex C. Walhof, Logan M. Nichols, and John P. Prineas. "Improved mid-infrared W-superlattice LEDs using Al-treated source." In Light-Emitting Devices, Materials, and Applications XXVI, edited by Martin Strassburg, Jong Kyu Kim, and Michael R. Krames. SPIE, 2022. http://dx.doi.org/10.1117/12.2610437.

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Muhowski, A. J., A. F. Briggs, L. J. Nordin, A. M. Skipper, P. Petluru, S. R. Bank, and D. Wasserman. "Mid-Wave Infrared Quantum Dot Light Emitting Diodes." In 2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID). IEEE, 2020. http://dx.doi.org/10.1109/rapid49481.2020.9195710.

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Lin, Wai Ching, and Stephen J. Matcher. "Swept-source OCT using pulsed mid-infrared light." In Label-free Biomedical Imaging and Sensing (LBIS) 2019, edited by Natan T. Shaked and Oliver Hayden. SPIE, 2019. http://dx.doi.org/10.1117/12.2507933.

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Reports on the topic "Mid-infrared light"

1

Cheng, Hung H., G. Sun, and R. S. Soref. Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate. Fort Belvoir, VA: Defense Technical Information Center, April 2015. http://dx.doi.org/10.21236/ada615859.

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2

Lam, Yee-Loy. Speckle Free, Low Coherency, High Brightness, and High Pulse Speed Infrared Collimated Light Sources for Mid-IR Target Designator and Hyperspectral Imaging. Fort Belvoir, VA: Defense Technical Information Center, October 2007. http://dx.doi.org/10.21236/ada482581.

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