Dissertations / Theses on the topic 'Microelectromechanical systems technology'

Thesis (S.M.M.O.T.)--Massachusetts Institute of Technology, Sloan School of Management, Management of Technology Program, 2001.
Includes bibliographical references (leaves 69-72).
Microelectromechanical systems (MEMS), at their core are a set of technologies that employ the processes developed in the integrated circuit (IC) and semiconductor industries to construct electro- mechanical devices. In the case of Microopticelectromechanical systems (MOEMS), optical elements are also integrated into these devices. MEMS technology holds the promise of significantly miniaturizing, reducing the cost of, and enhancing the performance of many sensors and actuators, evidence its widespread use in the manufacture of accelerometers, ink jet printer heads and various chemical gas sensors. Despite its stellar success in these "killer-applications," MEMS technology has failed to realize the widespread success many had predicted for it. Nonetheless, this technology has recently been explored extensively for new electro-optics applications, specifically in telecommunications for dense wavelength division multiplexing (DWDM) and optical switching. This thesis examines various models of dynamic technology adoption and explores how they apply to MEMS technology. Furthermore, by way of historical comparison to the development of application specific integrated circuit (ASIC), it will identify various developmental similarities. Finally, a unique model outlining the critical driving forces behind the adoption of MEMS technology will be constructed.
by Alan M. Then.
S.M.M.O.T.

Thesis (S.M.M.O.T.)--Massachusetts Institute of Technology, Sloan School of Management, Management of Technology Program, 1999.
Includes bibliographical references (leaf 80).
Microelectromechanical systems (MEMS) comprise a set of technologies for the micromachining and electromechanical integration of sensors and actuators. MEMS allow for the radical miniaturization of such devices, as well as for significant improvements in performance and cost over conventionally fabricated mechanical and electrical components. In this thesis, I attempt to assess the value inherent in MEMS innovations and to understand how companies have tried to capture that value. In doing so, I assess the pathways and prospects for the commercialization of MEMS-based devices. I have chosen to focus on two classes of devices: (1) micromachined accelerometers for crash sensing and subsequent air bag deployment in automobiles, and (2) microfabricated chemical sensing and analysis devices for detecting and quantifying gas phase molecules, analyzing complex molecular mixtures, and carrying out high throughput screening of chemical compounds. Accelerometers are an example of a MEMS-based sensor that has almost completely displaced existing electromechanical substitute devices. Applications of MEMS to chemical sensing and analysis, however, are less mature and widespread adoption is less assured. In both cases, I evaluate the opportunities in the new technology from several different perspectives: (1) the factors that affect the transition from innovative technologies to marketable products; (2) the economic, market, and strategic forces that influence the adoption of these products; and (3) the business models of companies that have attempted to profit from MEMS innovations. I conclude the thesis with a chapter on potential strategic market barriers to successful commercialization of MEMS-based devices.
by Gary N. Robinson.
S.M.M.O.T.

Thesis (MTech (Technology))--Cape Peninsula University of Technology, 2007
Most ofMEMS sensors are based on the micro-cantilever technology, which use wide range of different design materials and structures. The benefit ofMEMS technology is in developing devices having lower cost, lower power consumption, higher performance, and integration. A free-end cantileverbeam made of magnetic material (PerrnaIloy) and a movable mass attached to the free-end has been designed using MEMS software tools. The magnetic material was used to improve the sensitivity of the cantilever-beam to an external applied magnetic field. The deflection of the cantilever was detected using capacitive sensing method. The aim of this research was to develop a non-contact current sensor based on MEMS technology by analysing the simulation of the system design of the micro cantilever when subjected to a magnetic field produced by a current-carrying conductor. When the signal, a sinusoidal current with a constant frequency is applied, the cantilever-beam exhibits a vibration motion along the vertical axis when it is placed closer to the line current. This creates corresponding capacitance changes and generates a voltage output proportional to the capacitive change in the signal processing circuitry attached to the micro cantilever. Modelling of the magnetic moment of a magnetic cantilever-beam placed in a field, the deflection of { the beam, the natural frequency of the cantilever-beam, the maximum deflection, the change in differential capacitive sensing technique, linearity of the differential capacitive, and capacitive sensitivity the circuit designed for readout was derived.

Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2007.
Dr. Martha Gallivan, Committee Member ; Dr. Chris Paredis, Committee Member ; Dr. Janet K. Allen, Committee Member ; Dr. Peter Hesketh, Committee Co-Chair ; Dr. Farrokh Mistree, Committee Co-Chair.

In the last decades, there has been a huge proliferation of portable devices. Among them, consumer electronics such as mobile phones, music players, e-books, etc. are greatly extended. In order to provide these devices with the required autonomy, a power supply system has to be integrated within the device packaging. This impels the search of integrated power sources that could satisfy the requirements of high power density, long operation lifetime and low cost. Up to now, batteries have been commonly used as power supply for these devices. However, as functionalities increase, the need high off-grid power supply and storage exponentially increases. Just entering on the 4th generation (4G) era on consumer electronics devices, some studies suggest that the already optimized batteries are probably reaching their energy density limit and no longer can be considered for reliably powering high-performance devices. Therefore, in the last years, many research groups around the world have focused their attention on the development of efficient alternatives to batteries, as power supply for the new high-performance portable devices working on the low power regime (1−20W). Due to their long lifetime, high power density and integrability, probably the most promising alternative is the development of micro fuel cells. Among them, micro solid oxide fuel cells (micro SOFC) present the highest values of specific energy densities (by unit mass and/or volume), mainly due to their higher operating temperature and subsequent capability of operate directly on hydrocarbon fuels. The most extended design for micro SOFC devices is based on the fabrication of accessible freeKstanding membranes of the functional layers, i.e. a thin electrolyte covered by an anode and a cathode one at each side (electrodes), supported on silicon-based microfabricated platforms. The use of silicon as supporting material has been found to be very convenient as it is the principal material used in microfabrication technology and therefore there exist a wide and well-known series of techniques already developed for its micromachining. This allows the fabrication of functional membranes, while ensuring robustness on the system. This thesis encompasses the design, fabrication and characterization of thin film-based micro solid oxide fuel cells integrated in silicon. The development of micro SOFC was carried out in three different ways; (i.) presenting new designing strategies for the optimization of the free-standing membranes, (ii.) fabricating thermo-mechanically stable thin film electrolytes and (iii.) suggesting and implementing new more reliable thin film electrode materials. On one side, two different membrane designs are micro fabricated using silicon micro machining technology. First, the fabrication of a basic square design was firstly addressed, where the main concerns were placed on the adaptation of the fabrication flow to the Clean Room capabilities at IMB-CNM (CSIC). Then, an innovative large-area membrane was designed and fabricated. This second design was based on the use of doped silicon slab grids as robust support for the larger freeKstanding areas, allowing the fabrication of x30 larger membranes than previous basic designs. Yttria-stabilized zirconia (YSZ), the state-of-the-art electrolyte material in bulk SOFC, was used for the fabrication of thin film free-standing electrolytic membranes. Dense, fully crystalline and homogeneous films were obtained, as required for the fabrication of effective electrolytes, thus avoiding shortcuts between electrodes and/or gas leakages. An exhaustive study on the thermoKmechanical stability of the electrolytic membranes was performed, paying special attention to the evolution of the stress with fabrication conditions. Finally, target values of resistance associated to the electrolyte (Area Specific Resistance, ASR= 0.15 Ωcm(2)) were obtained at temperatures as low as 400℃ for 250 nm-thick YSZ membranes, thus presenting them as suitable electrolyte for micro SOFC operating in the intermediate range of temperatures (IT range, 400 − 800℃). Several materials were tested as thin film electrodes for their use in micro SOFC. First, although widely used by other authors in previous reports of micro SOFC systems, thin film metallic electrodes (porous Pt) were found to be thermally instable under micro SOFC operating temperatures. This impelled the search for alternative materials as either cathode or anode. For the cathode side, porous La(0.6)Sr(0.4)CoO(3-δ) (LSC) thin films were fabricated and implemented in real micro SOFC configurations, i.e. free-standing membranes. Sufficient conductivity for their use as cathode films was measured, and no degradation was observed in the whole operating range. The thermo-mechanical stability of LSC/YSZ/LSC membranes was ensured up to 700℃. Target values of ASR required for SOFC cathode/electrolyte bi-layers (0.30Ω cm(2)) were achieved in the IT range (700℃). For the anode side, porous Pt-Ce(0.8)Gd(0.2)O(1.9-δ) (Pt-CGO) thin film cermets were fabricated. Porous CGO films below 1m thick had to be fabricated due to delamination problems. Percolation of Pt into the porous ceramic network was ensured by thermal treatment and observed by SEM. Anode electrochemical performance was tested on Pt-CGO/YSZ/CGO-Pt symmetrical membranes. Target values for the anode/electrolyte biKlayer were reached again at temperatures of ca. 700℃. In addition, the fabrication of thermally stable metal-based current collectors was also addressed. A non-conventional lithographic step, i.e. nanosphere lithography was used in order to define a patterned grid on both sides of the functional membranes. Dense Pt grids were fabricated thermo-mechanically stable, and their durability was ensured during real micro SOFC operating conditions. Finally, a fully ceramic-based micro SOFC was presented here for the first time. The three functional components of the fuel cell, i.e. cathode, electrolyte and anode, were fabricated by using the previously developed thin films. Thus, LSC/YSZ/CGO-Pt free-standing membranes were fabricated, and finally Pt current collectors were implemented on both sides. Thermo-mechanical stability of the micro SOFC membrane was proved till 750℃, extending the up-to-now reported operating temperatures of micro SOFC and therefore allowing the use of ceramic electrodes. A maximum power density of 100 mW/cm(2) was measured at 750℃ under pure H2 as fuel and synthetic air as oxidant. These results represented the first report on a second generation of more reliable micro SOFC systems, based on ceramics instead of thermally instable metal-based electrodes.
En las últimas décadas, ha habido una gran proliferación de aparatos portátiles. Entre ellos, cabe destacar los aparatos destinados a electrónica de consumo, como por ejemplo teléfonos móviles, reproductores de música, libros electrónicos, etc., los cuales están actualmente muy extendidos. De cara a proporcionar a estos aparatos con suficiente autonomía, se ha de integrar una fuente de alimentación en el mismo dispositivo. Esto urge a buscar posibles fuentes de alimentación con capacidad de integración, y que a su vez satisfagan los requerimientos básicos de alta densidad de potencia, gran tiempo de vida y bajo coste. Hasta ahora, la principal fuente de alimentación utilizada en este tipo de dispositivos ha sido las baterías. Sin embargo, conforme aumentan las funcionalidades, la necesidad de mayor capacidad de suministro (o almacenamiento) energético aumenta. Es más, justo ahora entrando en la cuarta generación (4G) de la electrónica de consumo, diversos estudios sugieren que las baterías, ya optimizadas, probablemente están alcanzando su límite en densidad energética, con lo que no podrían ya considerarse más para alimentar de manera viable los dispositivos más avanzados. En este sentido, en los últimos años muchos grupos de investigación han puesto su atención en el desarrollo de alternativas viables que puedan mejorar las prestaciones de las baterías como fuente de alimentación de dispositivos de altas prestaciones que trabajen en el régimen de baja potencia (1 − 20W). Debido a su alto tiempo de vida, alta densidad energética y capacidad de integración, probablemente la alternativa más prometedora es el desarrollo de micro pilas de combustible. En particular, entre los diferentes tipos, las micro pilas de combustible de óxido sólido (micro SOFC, de sus siglas en inglés), presentan los mayores valores de densidad energética específica (por unidad de masa y/o volumen), mayormente debido a su alta temperatura de operación y la consecuente capacidad de operar directamente con combustibles hidrocarburos. El diseño de micro SOFC más extendido está basado en la fabricación de membranas auto soportadas, las cuales integran ya todas las partes funcionales de la pila, es decir, un electrolito fino cubierto por un ánodo y un cátodo (uno a cada lado). Estas membranas, de grosor muy fino (menos de 1m), normalmente se encuentran soportadas en plataformas de silicio micro mecanizadas, de manera que se facilita un fácil acceso al combustible directamente a ambos lados de la membrana, a la vez que se proporciona robustez al sistema. El uso de silicio como material de soporte es muy conveniente, ya que es el material más utilizado en micro fabricación, por lo que existe una amplia y altamente desarrollada serie de técnicas para su micro mecanizado. Esta tesis engloba el diseño, la fabricación y la caracterización de micro pilas de combustible de óxido sólido basadas en capas delgadas, e integradas en tecnología de silicio. El desarrollo de las micro SOFC se ha llevado a cabo de tres formas diferentes: (i.) presentando nuevos diseños para la optimización de las membranas auto soportadas, (ii.) fabricando electrolitos en capa delgada estables termo-mecánicamente y (iii.) sugiriendo e implementando en el dispositivo final nuevos materiales de electrodo en capa delgada más efectivos y viables que los actuales. En primer lugar, se fabricaron dos diseños de membrana diferentes, usando tecnología de micro fabricación de silicio. En el primero de los diseños, se fabricaron membranas cuadradas básicas. En este caso, el trabajo más importante fue el de la adaptación del proceso de fabricación al flujo de fabricación de la Sala Blanca del IMB-CNM (CSIC). Más adelante, se desarrolló un nuevo diseño de membrana de gran superficie, basado en el uso de mallas de nervios de silicio dopado como soporte robusto. Así, se consiguieron fabricar membranas auto soportadas con un área total de hasta 30 veces mayor que las conseguidas en el diseño básico anterior. Para el electrolito, se usó zirconia estabilizada con ytria (YSZ, de sus siglas en inglés), el material estado del arte en SOFC de gran volumen. Se fabricaron membranas auto soportadas de YSZ con gran reproducibilidad, obteniendo capas delgadas densas, cristalinas y de grosor homogéneo. Estas características son básicas para un buen funcionamiento del electrolito, ya que así se evitan posibles cortocircuitos entre los dos electrodos y/o fugas de gas. Además, se realizó un estudio exhaustivo de la estabilidad termo-mecánica de las membranas de YSZ, ya que las temperaturas de operación de la pila son de varios centenares de ℃. En particular, se prestó atención especial a la evolución de los estreses en función de las condiciones de fabricación de la capa de YSZ, para as. evitar posibles fallos en los continuos ciclados térmicos. Finalmente, se realizó un estudio de las propiedades electroquímicas de las membranas de YSZ fabricadas. Normalmente, se establece un valor de resistencia específica por área de 0.15 Ω cm2 para cada una de las capas funcionales de las pilas. En este caso, este valor objetivo se obtuvo a temperaturas de 400℃ en membranas de YSZ de 250 nm de grosor. De esta forma, se comprobó que estas capas pueden funcionar perfectamente como electrolito en todo el rango de operación de las micro SOFC, que normalmente se establece en 400 − 800℃. A continuación, se probaron diversos materiales como electrodos en capa delgada, para su implementación en micro SOFC. En primer lugar, aunque éstos han sido usados frecuentemente por otros autores en estudios previos de micro SOFC, se comprobó que los electrodos metálicos en capa delgada (capas de Pt poroso) son inestables a las temperaturas de operación de las micro SOFC. Por lo tanto, esto hizo que se probaran materiales alternativos, bien para el ánodo o para el cátodo. En particular, para el cátodo se fabricaron capas delgadas porosas de La(0.6)Sr(0.4)CoO(3-δ) (LSC) y se integraron en membranas auto soportadas de YSZ (electrolito). La conductividad eléctrica que se midió en estas capas es adecuada, y no se observó degradación en todo el rango de temperaturas de operación. Así mismo, se comprobó la estabilidad termo mecánica del sistema fabricando membranas simétricas de LSC/YSZ/LSC y realizándoles ciclados térmicos hasta los 700℃. Por último, se midieron las propiedades electroquímicas de las bi-capas cátodo/electrolito, obteniendo los valores objetivo de resistencia específica por área (0.30 Ωcm2) a temperaturas de 700℃. Para el ánodo, se fabricaron capas delgadas porosas de un cermet de Pt y Ce0(.8)Gd(0.2)O(1.9-δ) (PtKCGO). Las capas de CGO se tuvieron que fabricar de grosores por debajo de 1 m, debido a problemas de delaminación del sustrato. Se aseguró una buena inter-conexión entre el Pt y el CGO mediante tratamientos térmicos. Las propiedades electroquímicas se midieron nuevamente fabricando membranas simétricas, esta vez Pt-CGO/YSZ/CGO-Pt. Así mismo, el objetivo de 0.30 Ωcm2 se obtuvo de nuevo a temperaturas alrededor de 700℃. Además, en esta tesis se llevó a cabo la fabricación de colectores de corriente térmicamente estables y a su vez compatibles con la configuración básica de una micro SOFC (membranas auto soportadas). Para ello, se usó un proceso de litografía no convencional, llamado "nanosphere lithography". De esta forma se fabricaron mallas de Pt denso perfectamente ordenadas en ambos lados de las membranas. La estabilidad térmica y la durabilidad en el tiempo de estas mallas fue igualmente probada mediante medidas en condiciones de trabajo reales de micro SOFC. Por último, en este trabajo se presentó una micro SOFC completamente basada en cerámicas por primera vez. Las tres capas funcionales de la pila, es decir, tanto el cátodo, como el electrolito y el ánodo, se fabricaron basándose en los estudios previos de cada material. Así, se fabricaron membranas auto soportadas siguiendo la configuración LSC/YSZ/CGO-Pt. Además, se implementaron mallas de Pt en ambos lados para asegurar una buena colección de corriente. La estabilidad termo mecánica de la membrana se midió hasta 750℃, extendiendo así el rango de temperaturas de operación reportado anteriormente en dispositivos finales de micro SOFC y en consecuencia permitiendo el uso de electrodos cerámicos. Se midieron valores de densidad de potencia de 100 mW/cm2 a 750℃, usando H2 como combustible y aire sintético como oxidante. Estos resultados representan los primeros valores de potencia presentados en micro SOFC basadas en cerámicas, abriendo as. la posibilidad de desarrollar una segunda generación de micro SOFC más viables térmicamente.

The use of optical input/output (I/O) interconnects, in addition to electrical I/Os, is a promising approach for achieving high-bandwidth, chip-to-board communications required for future high-performance gigascale chip-based systems. While numerous efforts are underway to investigate the integration of optoelectronics and silicon microelectronics, virtually no work has been reported relating to testing of such chips. The objective of this research is to explore methods that enable wafer-level testing of gigascale chips having electrical and optical I/O interconnects. A major challenge in achieving this is to develop probe modules which would allow high-precision, temporary interconnection of a multitude of electrical and optical I/Os, in a chip-size area, to automated test equipment. A probe module would need to do this in a rapid, step-and-repeat manner across all the chips on the wafer. In this work, two candidate probe modules were devised, batch-fabricated on Si using microfabrication techniques, and successfully demonstrated. The first probe module consists of compliant electrical probes (10^3 probes/cm^2) fabricated alongside grating-in-waveguide optical probes. The second module consists of micro-opto-electro-mechanical-systems (MOEMS)-based microsocket probes (10^4 probes/cm^2) to interface a chip with polymer pillar-based electrical and optical I/Os. High-density through-wafer interconnects are an essential attribute in both probe substrates for transferring electrical and optical signals to the substrate back-side. Fabrication and characterization of metal-clad, metal-filled, and polymer-filled through-wafer interconnects as well as process integration with probe substrate fabrication are described and numerous possible redistribution schemes are explicated. Chips with optical and electrical I/Os are an emerging technology, and one that test engineers are likely to encounter in the near future. The contributions of this thesis are to help understand and address the issues relating to joint electrical and optical testing during manufacturing.

This dissertation presents the design and development of a mixed-signal low noise second-order integrated circuit (IC) for the open-loop and closed-loop operation of integrated capacitive micro- and nano-gravity accelerometers. The micromechanical accelerometers are fabricated in thick (less than 100 m) silicon-on-insulator (SOI) substrates. The IC provides the 1-bit digital output stream and has the versatility of interfacing sensors with different sensitivities while maintaining minimum power consumption (less than 5 mW) and maximum dynamic range (90 dB). A fully-differential sampled-data scheme is deployed with the ability of low-frequency noise reduction through the use of correlated double sampling (CDS) scheme. In this work, the measured resolution of the closed-loop CMOS-SOI accelerometer system, in the presence of high background accelerations, is in the micro-g (g: gravity) range. In this design, a second-order SC modulator is cascaded with the accelerometer and the front-end amplifier. The accelerometer operates in air and is designed for non-peaking response with a BW-3dB of 500 Hz. A 22 dB improvement in noise and hence dynamic range is achieved with a sampling clock of 40 kHz corresponding to a low oversampling ratio (OSR) of 40. The interface IC consumed a current of 1.5 mA from a supply of 3 V.

Falls and fall-induced fractures are very common among the elderly. Hip fractures account for most of the deaths and costs of all the fall-induced fractures. This dissertation presents a novel MEMS based human airbag system used as a hip protector. A Micro Inertial Measurement Unit (muIMU) which is based on MEMS accelerometers and gyro sensors is developed as the motion sensing part of the system. The result using this muIMU based on Support Vector Machine (SVM) training to recognize falling-motions are presented, where we showed that selected eigenvector sets generated from 200 experimental data can be separated into falling and other motions completely. For real-time recognition, the SVM filter should be embedded to a high speed DSP system for fast computation and complex filter analyses. After the simulations for SVM filter and FFT were performed on a computer simulator (TI DSP320 C6713), we used DSK6713 (DSP Starter Kit) as our target board and integrated FFT and SVM filter on the chip. The whole algorithm works well with exist sensor data. Demo shows that our DSP system can successfully classify fall and non-fall states. At the same time, the system can trigger our airbag inflation mechanism when a fall occurs. The system was shown to open the airbag in real-time and protected the experimenter's hip area.
by Shi, Guangyi.
"March 2008."
Adviser: Wen Jung Li.
Source: Dissertation Abstracts International, Volume: 70-03, Section: B, page: 1855.
Thesis (Ph.D.)--Chinese University of Hong Kong, 2008.
Includes bibliographical references (p. 108-111).
Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web.
Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web.
Abstracts in English and Chinese.
School code: 1307.

On-chip impedance tuning is used to overcome IC perturbations caused by packaging stress. Tuning is more important for matching networks of radio frequency (RF) systems. Possible package resonance and fabrication process variations may cause instability, which is a major problem in RF systems. Thus, precautions need to be taken in order to maintain the overall stability of components and the final system itself. Electrically erasable programmable read-only memory switches (EEPROMs) occupy less die area compared to e-fuses and microelectromechanical system (MEMS) switches, thus EEPROMs are proposed to be used as tuning switches in millimetre-wave (mm-wave) applications. It is anticipated that EEPROM switches will also enable multi-time programming because of the smaller area and the fact that more switches can be used for fine-tuning. The problem addressed in this research is how suitable EEPROMs are for switching applications in the mm-wave region. The main focus of this dissertation is to characterise the suitability of EEPROM switches qualitatively for tuning with systems operating in the mm-wave spectrum. 130 nm SiGe BiCMOS IBM 8HP process technology was used for simulation and the fabricated prototypes. The Dickson charge pump (CP), two voltage doubler CPs and four floating gate (FG) devices were investigated. Literature and theoretical verification was done using computer aided design (CAD) Cadence software through circuit analysis and the layouts were also designed for integrated circuit (IC) prototype fabrication. The qualitative evaluation of the hypothesis was based on investigating reliability issues, switching characteristics, CP output drive capability and mm-wave characterisation. The maximum measured drain current for FGs was 1.4 mA, 2.7 mA and 3 mA for devices 2, 3 and 4, respectively. The ratio between ON state switching current (after tunnelling) and OFF state switching current (after injection) was 1.5, 1.35 and 6 for devices 2, 3 and 4, respectively. The ratios correlated with the expected results in terms of FG transistor area: a high area results in a higher ratio. Despite the correlation, devices 2 and 3 may be unsuitable because the ratio is less than 2: a smaller ratio between the ON and OFF states could also result in higher losses. The Dickson CP achieved an output voltage of 2.96 V from an input of 1.2 V compared to 3.08 V as computed from the theoretical analysis and 4.5 V from the simulation results. The prototypes of the voltage doubler CP did not perform as expected: a maximum of 1 V was achieved compared to 4.1 – 5 V as in the simulation results. The suitability of FG devices for switching applications depends on the ratio of the ON and OFF states (associated to insertion and isolation losses): the larger the FG transistor area, the higher the ratio. The reliability issues are dominated by the oxide thickness of the transistor, which contributes to charge leakages and charge trapping: smaller transistor length causes more uncertainties. Charge trapping in the oxide increases the probability of leakages and substrate conduction, thus introduces more losses. Based on the findings of this research work, the FG devices promise to be suitable for mm-wave switching applications and there is a need for further research investigation to characterise the devices in the mm-wave region fully. AFRIKAANS : Impedansie-instelling op skyf word gebruik om steurings in geïntegreerde stroombane wat deur verpakkingstres veroorsaak word, te oorkom. Instelling is meer belangrik om netwerke van radiofrekwensiesisteme te paar. Moontlike verpakkingresonansie en variasies in die vervaardigingsproses kan onstabiliteit veroorsaak, wat ‟n groot probleem is in radiofrekwensiesisteme. Voorsorg moet dus getref word om die oorhoofse stabiliteit van komponente en die finale sisteem self te handhaaf. Elektries uitveebare programmeerbare slegs-lees-geheueskakelaars (EEPROMs) neem minder matrysarea op as e-sekerings en die sekerings van mikro-elektromeganiese sisteme en word dus voorgestel vir gebruik as instellingskakelaars in millimetergolfaanwendings. Daar word verwag dat EEPROM-skakelaars ook multi-tydprogrammering sal moontlik maak as gevolg van die kleiner area en die feit dat meer skakelaars gebruik kan word vir fyn instellings. Die probleem wat in hierdie navorsing aandag geniet, is die geskiktheid van EEPROMS vir skakelaanwendings in die millimetergolfstreek. The hooffokus van die verhandeling is om die geskiktheid van EEPROM-skakelaars kwalitatief te karakteriseer vir instelling met sisteme wat in die millimetergolfspektrum funksioneer. Department of Electrical, Electronic and Computer Engineering v University of Pretoria 130 nm SiGe BiCMOS IBM 8HP-prosestegnologie is gebruik vir simulasie en die vervaardigde prototipes. Die Dickson-laaipomp is gebruik vir simulasie en die vervaardigde prototipes. Die Dickson-laaipomp, twee spanningverdubbelinglaaipompe en vier swewendehektoestelle is ondersoek. Literatuur- en teoretiese verifikasie is gedoen met behulp van rekenaarondersteunde-ontwerp (CAD) Cadence-sagteware deur stroombaananalise en die uitleg is ook ontwerp vir die vervaardiging van geïntegreerdestroombaanprototipes. Die kwalitatiewe evaluasie van die hipotese is gebaseer op die ondersoek van betroubaarheidkwessies, skakelingeienskappe, laaipompuitsetdryfvermoë en millimetergolfkarakterisering. Die maksimum gemete dreineerstroom vir swewende hekke was 1.4 mA, 2.7 mA en 3 mA vir onderskeidelik toestelle 2, 3 en 4. Die verhouding tussen die AAN-toestand van die skakelstroom (na tonnelling) en die AF-toestand van die skakelstroom (na inspuiting) was 1.5, 1.35 en 6 vir toestelle 2, 3 en 4, onderskeidelik. Die verhoudings het ooreengestem met die verwagte resultate rakende die swewendehek-transistorareas: ‟n groot area het ‟n hoër verhouding tot gevolg. Nieteenstaande die ooreenstemming, mag toestelle 2 en 3 moontlik nie geskik wees nie, omdat die verhouding kleiner as 2 is: ‟n kleiner verhouding tussen die AAN- en AF-toestande mag ook hoër verliese tot gevolg hê. Die Dickson-laaipomp het ‟n uitsetspanning van 2.96 V vanaf ‟n inset van 1.2 V vergeleke met 3.08 V soos bereken volgens die teoretiese analise en 4.5 V volgens die simulasieresultate. Die prototipes van die spanningverdubbelinglaaipomp het nie gefunksioneer soos verwag is nie: ‟n maksimum van 1 V is bereik vergeleke met 4.1 – 5 V soos in die simulasieresultate. Die geskiktheid van swewendehektoestelle vir skakelingtoepassings hang af van die verhouding van die AAN- en AF-toestande (wat met invoer-en isolasieverlies geassosieer word): hoe groter die swewendehektransistorarea, hoe hoër die verhouding. Die betroubaarheidkwessies word oorheers deur die oksieddikte van die transistor, wat bydra tot ladinglekkasies en ladingvasvangs: korter transistorlengte veroorsaak meer onsekerheid. Ladingvasvangs in die oksied verhoog die moontlikheid van lekkasies en substraatgeleiding en veroorsaak dus groter verlies. Die bevindings van hierdie navorsing toon dat swewendehektoestelle waarskynlik geskik is vir millimetergolfaanwendings en verdere navorsing is nodig om die toestelle volledig in die millimetergolfstreek te karakteriseer. Copyright
Dissertation (MEng)--University of Pretoria, 2013.
Electrical, Electronic and Computer Engineering
unrestricted