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Books on the topic 'Metal-semiconductor field effect transistor (MESFET)'

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Author: Grafiati

Published: 9 March 2023

Last updated: 10 March 2023

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Consult the top 36 books for your research on the topic 'Metal-semiconductor field effect transistor (MESFET).'

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1

1954-, Golio John Michael, ed. Microwave MESFETs and HEMTs. Boston: Artech House, 1991.

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2

Microwave field-effect transistors: Theory, design, and applications. 3rd ed. Atlanta: Noble, 1995.

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3

Microwave field-effect transistors: Theory, design, and applications. 2nd ed. Letchworth, Herts., England: Research Studies Press, 1986.

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4

Fundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs. New York: Wiley, 1999.

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5

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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6

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2011.

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7

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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8

Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.

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9

Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.

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10

C, Sansen Willy M., and Maes H. E, eds. Matching properties of deep sub-micron MOS transistors. New York: Springer, 2005.

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11

Operation and modeling of the MOS transistor. 2nd ed. Boston: WCB/McGraw-Hill, 1998.

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12

Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. Boston: WCB/McGraw-Hill, 1999.

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13

Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. New York: Oxford University Press, 1999.

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14

Tsividis, Yannis. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.

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15

Charge-based MOS transistor modelling: The EKV model for low-power and RF IC design. Chichester, UK: John Wiley & Sons, 2006.

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16

Blaser, Markus. Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication. Konstanz: Hartung-Gorre, 1997.

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17

Canfield, Philip C. A P-well GaAs MESFET technology. 1990.

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18

Canfield, Philip C. A P-well GaAs MESFET technology. 1990.

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19

Imam, Mohamed Abdelgalil. Buried p-layer MESFET characterization and large-signal modeling. 1991.

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20

GaAs MESFET circuit design. Boston: Artech House, 1988.

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21

Yan, Kai-tuan Kelvin. Wide bandwidth GaAs MESFET amplifier. 1992.

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22

Peng, Lan L. Drain current transient characterization of P-channel GaAs MESFET. 1990.

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23

Lin, Angela A. Two dimensional numerical simulation of a non-isothermal GaAs MESFET. 1992.

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24

Huster, Carl R. A parallel/vector Monte Carlo MESFET model for shared memory machines. 1992.

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25

Liu, William. Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 2008.

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26

Yan, Kai-tuan Kelvin. Noise measurements, models and analysis in GaAs MESFETs circuit design. 1996.

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27

Lee, Mankoo. Analysis and modeling of GaAs MESFET's for linear integrated circuit design. 1990.

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28

Mohammed, Ahmed Sarhan. Analysis and modeling of electrically long MESFETS and coupled schottky lines. 1987.

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29

Kavalieros, Jack Theodore. Oxide charge degradation of MOS transistor current and mobility in the linear and saturation ranges. 1995.

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30

(Editor), Wladyslaw Grabinski, Bart Nauwelaers (Editor), and Dominique Schreurs (Editor), eds. Transistor Level Modeling for Analog/RF IC Design. Springer, 2006.

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31

Operation and Modeling of the MOS Transistor (The Oxford Series in Electrical and Computer Engineering). 3rd ed. Oxford University Press, 2008.

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32

Amara, Amara, and Olivier Rozeau. Planar Double-Gate Transistor: From Technology to Circuit. Springer Netherlands, 2010.

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33

Tsividis, Yannis. Operation and Modeling of the MOS Transistor. Oxford University Press, USA, 2003.

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34

Tsividis, Yannis, and Colin McAndrew. Operation and Modeling of the MOS Transistor: Special MOOC Edition. Oxford University Press, 2013.

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35

Green, Keith R. A model of the short-channel, metal-oxide-semiconductor field-effect transistor for pragmatic mixed-mode device/circuit simulation. 1993.

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36

Solymar, L., D. Walsh, and R. R. A. Syms. Principles of semiconductor devices. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0009.

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Abstract:

p–n junctions are examined initially and the potential distribution in the junction region is derived based on Poisson’s equation. Next the operation of the transistor is discussed, both in terms of the physics and of equivalent circuits. Potential distributions in metal–semiconductor junctions are derived and the concept of surface states is introduced. The physics of tunnel junctions is discussed in terms of their band structure. The properties of varactor diodes are described and the possibility of parametric amplification is touched upon. Further devices discussed are field effect transistors, charge-coupled devices, controlled rectifiers, and the Gunn effect. The fabrication of microelectronic circuits is discussed, followed by the more recent but related field of micro-electro-mechanical systems. The discipline of nanoelectronics is introduced including the role of carbon nanotubes. Finally, the effect of the development of semiconductor technology upon society is discussed.

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