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Journal articles on the topic 'Metal oxydes and transparent conducting materials'

Author: Grafiati

Published: 31 August 2024

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1

Kim, Yujin, Sung Hwan Joo, Seong Gwan Shin, Hyung Wook Choi, Chung Wung Bark, You Seung Rim, Kyung Hwan Kim, and Sangmo Kim. "Effect of Annealing in ITO Film Prepared at Various Argon-and-Oxygen-Mixture Ratios via Facing-Target Sputtering for Transparent Electrode of Perovskite Solar Cells." Coatings 12, no. 2 (February 4, 2022): 203. http://dx.doi.org/10.3390/coatings12020203.

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Normal perovskite solar cells (PSCs) consist of the following layers: transparent electrode, electron-transport layer (ETL), light-absorbing perovskite layer, hole-transport layer (HTL), and metal electrode. Energy, such as electricity, is produced through light absorbance and electron–hole generation/transport between two electrode types (metal film and transparent conducting film). Among stacked layers in a PSC, the transparent electrode plays the high-performance-power-conversion-efficiency role. Transparent electrodes should have high-visible-range transparency and low resistance. Therefore, in this study, we prepared indium tin oxide (ITO) films on a glass substrate by using facing-target sputtering without substrate heating treatment and investigate the heating-treatment effect on the ITO-film properties for perovskite solar cells (PSCs). Moreover, we fabricated PSCs with ITO films prepared at various oxygen flows during the sputtering process, and their energy-conversion properties are investigated.

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2

Major, S., M. C. Bhatnagar, S. Kumar, and K. L. Chopra. "The effect of hydrogen plasma on the properties of indium-tin oxide films." Journal of Materials Research 3, no. 4 (August 1988): 723–28. http://dx.doi.org/10.1557/jmr.1988.0723.

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The effect of hydrogen plasma exposure on the properties of transparent conducting indium-tin oxide films has been studied. The exposure reduces the film surface to elemental indium. The thickness of the reduced layer increases with increasing exposure and finally saturates to a thickness of about 100 nm. The reduced surface is rough and decreases the visible transmittance of these films drastically due to increased absorptance and reflectance. The reduced metal layer decreases the sheet resistance of the films. Annealing of the plasma-exposed film in oxygen recovers the visible transmittance except in the case of the severely damaged films.

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3

Rouviller, Axel, Aline Jolivet, Alex Misiak, Moussa Mezhoud, Christophe Labbé, Julien Cardin, Xavier Portier, et al. "Structural, Electrical and Optical Properties of Zn-Doped SrVO₃ Thin Films Grown By Co-Sputtering." ECS Meeting Abstracts MA2023-02, no. 34 (December 22, 2023): 1669. http://dx.doi.org/10.1149/ma2023-02341669mtgabs.

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Due to its optical and electrical characteristics, SrVO3 is a strongly correlated metal that has received extensive research in recent years. This makes it a promising transparent conducting oxide (TCO) for a variety of optoelectronic applications. The most widely used TCO at the moment, indium tin oxide, suffers from resource depletion. By analyzing and improving these interesting properties, SrVO3 might be able to take its place [1]. Unfortunately, in order to obtain SrVO3 as a crystallized phase, non-compatible with microelectronic industry thin film growth techniques must be used. Moreover, they require specific substrates for achieving the crystalline state, such as SrTiO3, LaAlO3, and (LaAlO3)0,3(Sr2TaAlO6)0,7 (LSAT) [2]. Nevertheless, recent studies made by our groups have demonstrated that crystalline SrVO3 layers may be produced on less expensive substrates such as glass or silicon substrates, with the simple use of a TiO2 buffer layer. This recent finding is covered by a global patent [3]. In the present work, we report experimental investigations on the reactively co-sputtering of SrVO3 and ZnO targets in a H-rich plasma, on Si substrates, with and without a TiO2 buffer layer, to grow transparent and conductive films. TiO2 buffer layer has been deposited on Si Substrate by Atomic Layer Deposition as reported elsewhere [4]. We looked at the effects of growth temperatures (TG) and the hydrogen rate rH (the ratio of H2 to Ar) on the thin films’ structural, electrical, and optical characteristics. XRD, high-resolution TEM, and AFM techniques were used to examine the films’ structural characteristics. The 4 probes approach, Van der Pauw measurements using a PPMS, and Hall effect measurements were used to examine the electrical properties. Finally, spectroscopic ellipsometry was used to conduct optical characterizations. The structural analysis showed that it is possible to favor the growth of crystalline SrVO3 layers on top of the TiO2 buffer layer by optimizing TG and rH (Figure 1a). In some specific conditions, a partially crystallized layer of SrVO3 was also directly deposited on a Si substrate without the use of such a buffer layer, which has never been reported in the literature and thus is encouraging for the future growth of such material on-low-cost substrate (Figure 1b). The Zn concentration in the film is only 0.15 at% because the radio-frequency (RF) power density applied to the ZnO target is much lower than the one applied to the SrVO3 target. The presence of dopants during the development process may favor the crystallization of SrVO3, which may help to explain this partial crystallization. This finding might pave the way for buffer-free complete crystallization of SrVO3 on Si substrates. When the films are grown on a TiO2 buffer layer, measurements of the physical properties have evidenced that it is possible to form thin films with optical transparency ranging from 70 to 75%, between 475 and 800 nm (Figure 1c). The thin films’ electrical resistivities at ambient temperature reach values of 1.2 × 10−3 Ohm.cm, according to electrical characterizations performed on them using the 4 probes method. Moreover, the PPMS data reveal a decrease in resistivity as a function of temperature (Figure 1d) which is the signature of semiconductor behavior. Such a feature has never been reported elsewhere and is probably due to an excess of oxygen in the layer induced 2 by the reactive growth approach. The vanadate films detailed in this paper present a sufficiently low resistivity to be used for microelectronics applications since the films produced with optimal values of rH and TG are more conductive than the undoped semiconductor films typically used as TCOs, such as ZnO and SnO2. In addition, these films feature an optical band gap, and therefore offer the opportunity to create materials with photoluminescence properties by doping them with rare earth ions for example. This is extremely promising for the design of light-emitting diodes or sensors. [1] L. Zhang et al, “Correlated metals as transparent conductors,” Nature materials, vol. 15,12 2015. [2] A. Boileau et al, “Tuning of the optical properties of the transparent conducting oxide SrVO3 by electronic correlations,” Advanced Optical Materials, vol. 7, p. 1801516, 01 2019. [3] Patent FR3113185 [4] A. Jolivet et al, “Structural, optical, and electrical properties of TiO2 thin films deposited by ALD: Impact of the substrate, the deposited thickness and the deposition temperature,” Applied Surface Science, vol. 608, p. 155214, 2023. Figure 1

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4

Ginley, David S., and Clark Bright. "Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (August 2000): 15–18. http://dx.doi.org/10.1557/mrs2000.256.

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In the interim between the conception of this issue of MRS Bulletin on transparent conducting oxides (TCOs) and its publication, the remarkable applications dependent on these materials have continued to make sweeping strides. These include the advent of larger flat-screen high-definition televisions (HDTVs), larger and higher-resolution screens on portable computers, the increasing importance of low emissivity (“low-e”) and electrochromic windows, a significant increase in the manufacturing of thin-film photovoltaics (PV), and a plethora of new hand-held and smart devices, all with smart displays.1-7 Coupled with the increased importance of TCO materials to these application technologies has been a renaissance over the last two years in the science of these materials. This has included new n-type materials, the synthesis of true p-type materials, and the theoretical prediction and subsequent confirmation of the applicability of codoping to produce p-type ZnO. Considering that over the last 20 years much of the work on TCOs was empirical and focused on ZnO and variants of InxSn1-xO2, it is quite remarkable how this field has exploded. This may be a function of not only the need to achieve higher performance levels for these devices, but also of the increasing importance of transition-metal-based oxides in electro-optical devices. This issue of MRS Bulletin is thus well timed to provide an overview of this rapidly expanding area. Included are articles that cover the industrial perspective, new n-type materials, new p-type materials, novel deposition methods, and approaches to developing both an improved basic understanding of the materials themselves as well as models capable of predicting performance limits.

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5

Elbahri, Mady, Mehdi Keshavarz Hedayati, Venkata Sai Kiran Chakravadhanula, Mohammad Jamali, Thomas Strunkus, Vladimir Zaporojtchenko, and Franz Faupel. "An Omnidirectional Transparent Conducting-Metal-Based Plasmonic Nanocomposite." Advanced Materials 23, no. 17 (March 28, 2011): 1993–97. http://dx.doi.org/10.1002/adma.201003811.

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6

Budianu, E., M. Purica, F. Iacomi, C. Baban, P. Prepelita, and E. Manea. "Silicon metal-semiconductor–metal photodetector with zinc oxide transparent conducting electrodes." Thin Solid Films 516, no. 7 (February 2008): 1629–33. http://dx.doi.org/10.1016/j.tsf.2007.07.196.

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7

Hoshino, Katsuyoshi, Naoki Yazawa, Yoshiyasu Tanaka, Takeshi Chiba, Takenori Izumizawa, and Minako Kubo. "Polycarbazole Nanocomposites with Conducting Metal Oxides for Transparent Electrode Applications." ACS Applied Materials & Interfaces 2, no. 2 (February 2, 2010): 413–24. http://dx.doi.org/10.1021/am900684e.

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8

Yang, Jie, Chunxiong Bao, Kai Zhu, Tao Yu, and Qingyu Xu. "High-Performance Transparent Conducting Metal Network Electrodes for Perovksite Photodetectors." ACS Applied Materials & Interfaces 10, no. 2 (January 5, 2018): 1996–2003. http://dx.doi.org/10.1021/acsami.7b15205.

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9

Sepat, Neha, Vikas Sharma, Devendra Singh, Garima Makhija, and Kanupriya Sachdev. "Nature-inspired bilayer metal mesh for transparent conducting electrode application." Materials Letters 232 (December 2018): 95–98. http://dx.doi.org/10.1016/j.matlet.2018.08.088.

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10

Maurya, Sandeep Kumar, Hazel Rose Galvan, Gaurav Gautam, and Xiaojie Xu. "Recent Progress in Transparent Conductive Materials for Photovoltaics." Energies 15, no. 22 (November 19, 2022): 8698. http://dx.doi.org/10.3390/en15228698.

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Transparent conducting materials (TCMs) are essential components for a variety of optoelectronic devices, such as photovoltaics, displays and touch screens. In recent years, extensive efforts have been made to develop TCMs with both high electrical conductivity and optical transmittance. Based on material types, they can be mainly categorized into the following classes: metal oxides, metal nanowire networks, carbon-material-based TCMs (graphene and carbon nanotube networks) and conjugated conductive polymers (PEDOT:PSS). This review will discuss the fundamental electrical and optical properties, typical fabrication methods and the applications in solar cells for each class of TCMs and highlight the current challenges and potential future research directions.

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11

Singh, Ashutosh K., R. K. Govind, S. Kiruthika, M. G. Sreenivasan, and Giridhar U. Kulkarni. "Hybrid transparent conducting glasses made of metal nanomesh coated with metal oxide overlayer." Materials Chemistry and Physics 239 (January 2020): 121997. http://dx.doi.org/10.1016/j.matchemphys.2019.121997.

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12

Lee, Hock Beng, Won-Yong Jin, Manoj Mayaji Ovhal, Neetesh Kumar, and Jae-Wook Kang. "Flexible transparent conducting electrodes based on metal meshes for organic optoelectronic device applications: a review." Journal of Materials Chemistry C 7, no. 5 (2019): 1087–110. http://dx.doi.org/10.1039/c8tc04423f.

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13

Choi, Young Joong, Ho Yun Lee, Seohan Kim, and Pung Keun Song. "Controlled Lattice Thermal Conductivity of Transparent Conductive Oxide Thin Film via Localized Vibration of Doping Atoms." Nanomaterials 11, no. 9 (September 11, 2021): 2363. http://dx.doi.org/10.3390/nano11092363.

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Amorphization using impurity doping is a promising approach to improve the thermoelectric properties of tin-doped indium oxide (ITO) thin films. However, an abnormal phenomenon has been observed where an excessive concentration of doped atoms increases the lattice thermal conductivity (κl). To elucidate this paradox, we propose two hypotheses: (1) metal hydroxide formation due to the low bond enthalpy energy of O and metal atoms and (2) localized vibration due to excessive impurity doping. To verify these hypotheses, we doped ZnO and CeO2, which have low and high bond enthalpies with oxygen, respectively, into the ITO thin film. Regardless of the bond enthalpy energy, the κl values of the two thin films increased due to excessive doping. Fourier transform infrared spectroscopy was conducted to determine the metal hydroxide formation. There was no significant difference in wave absorbance originating from the OH stretching vibration. Therefore, the increase in κl due to the excessive doping was due to the formation of localized regions in the thin film. These results could be valuable for various applications using other transparent conductive oxides and guide the control of the properties of thin films.

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14

Li, Peng, Xingzhen Yan, Jiangang Ma, Haiyang Xu, and Yichun Liu. "Highly Stable Transparent Electrodes Made from Copper Nanotrough Coated with AZO/Al2O3." Journal of Nanoscience and Nanotechnology 16, no. 4 (April 1, 2016): 3811–15. http://dx.doi.org/10.1166/jnn.2016.11879.

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Due to their high flexibility, high conductivity and high transparency in a wide spectrum range, metal nanowires and meshes are considered to be two of the most promising candidates to replace the traditional transparent conducting films, such as tin doped indium oxide. In this paper, transparent conducting films made from copper nanotroughs are prepared by the electrospinning of polymer fibers and subsequent thermal evaporation of copper. The advantages of the technique include low junction resistance, low cost and low preparation temperature. Although the copper nanotrough transparent conducting films exhibited a low sheet resistance (19.2 Ω/sq), with a high transmittance (88% at 550 nm), the instability of copper in harsh environments seriously hinders its applications. In order to improve the stability of the metal transparent conducting films, copper nanotroughs were coated with 39 nm thick aluminum-doped zinc oxide and 1 nm thick aluminum oxide films by atomic layer deposition. The optical and electrical measurements show that coating copper nanotrough with oxides barely reduces the transparency of the films. It is worth noting that conductive oxide coating can effectively protect copper nanotroughs from thermal oxidation or acidic corrosion, whilst maintaining the same flexibility as copper nanotroughs on its own.

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15

Wu, Fayu, Xinru Tong, Zhuo Zhao, Jianbo Gao, Yanwen Zhou, and Peter Kelly. "Oxygen-controlled structures and properties of transparent conductive SnO2:F films." Journal of Alloys and Compounds 695 (February 2017): 765–70. http://dx.doi.org/10.1016/j.jallcom.2016.08.114.

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16

Shim, Young-Seok, Hi Gyu Moon, Do Hong Kim, Ho Won Jang, Chong-Yun Kang, Young Soo Yoon, and Soek-Jin Yoon. "Transparent conducting oxide electrodes for novel metal oxide gas sensors." Sensors and Actuators B: Chemical 160, no. 1 (December 2011): 357–63. http://dx.doi.org/10.1016/j.snb.2011.07.061.

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17

Ouyang, Qi, Wenwen Wang, Qiang Fu, and Dongmei Dong. "Atomic oxygen irradiation resistance of transparent conductive oxide thin films." Thin Solid Films 623 (February 2017): 31–39. http://dx.doi.org/10.1016/j.tsf.2016.12.038.

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18

Lewis, Brian G., and David C. Paine. "Applications and Processing of Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (August 2000): 22–27. http://dx.doi.org/10.1557/mrs2000.147.

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The first report of a transparent conducting oxide (TCO) was published in 1907, when Badeker reported that thin films of Cd metal deposited in a glow discharge chamber could be oxidized to become transparent while remaining electrically conducting. Since then, the commercial value of these thin films has been recognized, and the list of potential TCO materials has expanded to include, for example, Al-doped ZnO, GdInOx, SnO2, F-doped In2O3, and many others. Since the 1960s, the most widely used TCO for optoelectronic device applications has been tin-doped indium oxide (ITO). At present, and likely well into the future, this material offers the best available performance in terms of conductivity and transmissivity, combined with excellent environmental stability, reproducibility, and good surface morphology. The use of other TCOs in large quantities is application-specific. For example, tin oxide is now widely used in architectural glass applications.

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Babicheva, Viktoriia E., Alexandra Boltasseva, and Andrei V. Lavrinenko. "Transparent conducting oxides for electro-optical plasmonic modulators." Nanophotonics 4, no. 1 (June 16, 2015): 165–85. http://dx.doi.org/10.1515/nanoph-2015-0004.

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Abstract:The ongoing quest for ultra-compact optical devices has reached a bottleneck due to the diffraction limit in conventional photonics. New approaches that provide subwavelength optical elements, and therefore lead to miniaturization of the entire photonic circuit, are urgently required. Plasmonics, which combines nanoscale light confinement and optical-speed processing of signals, has the potential to enable the next generation of hybrid information-processing devices, which are superior to the current photonic dielectric components in terms of speed and compactness. New plasmonic materials (other than metals), or optical materials with metal-like behavior, have recently attracted a lot of attention due to the promise they hold to enable low-loss, tunable, CMOScompatible devices for photonic technologies. In this review, we provide a systematic overview of various compact optical modulator designs that utilize a class of the most promising new materials as the active layer or core— namely, transparent conducting oxides. Such modulators can be made low-loss, compact, and exhibit high tunability while offering low cost and compatibility with existing semiconductor technologies. A detailed analysis of different configurations and their working characteristics, such as their extinction ratio, compactness, bandwidth, and losses, is performed identifying the most promising designs.

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20

Ko, Wen-Yin, and Kuan-Jiuh Lin. "Highly Conductive, Transparent Flexible Films Based on Metal Nanoparticle-Carbon Nanotube Composites." Journal of Nanomaterials 2013 (2013): 1–16. http://dx.doi.org/10.1155/2013/505292.

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Metallic nanoparticles decorated on MWCNTs based transparent conducting thin films (TCFs) show a cheap and efficient option for the applications in touch screens and the replacement of the ITO film because of their interesting properties of electrical conductivity, mechanical property, chemical inertness, and other unique properties, which may not be accessible by their individual components. However, a great challenge that always remains is to develop effective ways to prepare junctions between metallic nanoparticles and MWCNTs for the improvement of high-energy barriers, high contact resistances, and weak interactions which could lead to the formation of poor conducting pathways and result in the CNT-based devices with low mechanical flexibility. Herein, we not only discuss recent progress in the preparation of MNP-CNT flexible TCFs but also describe our research studies in the relevant areas. Our result demonstrated that the MNP-CNT flexible TCFs we prepared could achieve a highly electrical conductivity with the sheet resistance of ~100 ohm/sq with ~80% transmittance at 550 nm even after being bent 500 times. This electrical conductivity is much superior to the performances of other MWCNT-based transparent flexible films, making it favorable for next-generation flexible touch screens and optoelectronic devices.

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Afre, Rakesh A., Nallin Sharma, Maheshwar Sharon, and Madhuri Sharon. "Transparent Conducting Oxide Films for Various Applications: A Review." REVIEWS ON ADVANCED MATERIALS SCIENCE 53, no. 1 (January 1, 2018): 79–89. http://dx.doi.org/10.1515/rams-2018-0006.

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Abstract This review encompasses properties and applications of polycrystalline or amorphous, Transparent Conducting Oxides (TCO) semiconductors. Coexistence of electrical conductivity and optical transparency in TCO depends on the nature, number and atomic arrangements of metal cations in oxides, on the resident morphology and presence of intrinsic or introduced defects. Therefore, TCO semiconductors that are impurity-doped as well as the ternary compounds and multi-component oxides consisting of combinations are discussed. Expanding use of TCO is endangered by scarcity, cost of In, fragility of glass, limited transparency to visible light, instability above >200 °C, non-flexible for application of flexible solar cell; thus driving search for alternatives such as graphene or CNT, that are more stable under acidic, alkaline, oxidizing, reducing and elevated temperature. There are reasons to conclude that there is need to develop large area deposition techniques to produce TCO films with high deposition rate. TCOs are mostly n-type semiconductors, but p-type are also being researched

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Rebecchi, Luca, Nicolò Petrini, Ivet Maqueira Albo, Nicola Curreli, and Andrea Rubino. "Transparent conducting metal oxides nanoparticles for solution-processed thin films optoelectronics." Optical Materials: X 19 (July 2023): 100247. http://dx.doi.org/10.1016/j.omx.2023.100247.

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23

Kumar, Amit, Muhammad Omar Shaikh, and Cheng-Hsin Chuang. "Silver Nanowire Synthesis and Strategies for Fabricating Transparent Conducting Electrodes." Nanomaterials 11, no. 3 (March 10, 2021): 693. http://dx.doi.org/10.3390/nano11030693.

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One-dimensional metal nanowires, with novel functionalities like electrical conductivity, optical transparency and high mechanical stiffness, have attracted widespread interest for use in applications such as transparent electrodes in optoelectronic devices and active components in nanoelectronics and nanophotonics. In particular, silver nanowires (AgNWs) have been widely researched owing to the superlative thermal and electrical conductivity of bulk silver. Herein, we present a detailed review of the synthesis of AgNWs and their utilization in fabricating improved transparent conducting electrodes (TCE). We discuss a range of AgNW synthesis protocols, including template assisted and wet chemical techniques, and their ability to control the morphology of the synthesized nanowires. Furthermore, the use of scalable and cost-effective solution deposition methods to fabricate AgNW based TCE, along with the numerous treatments used for enhancing their optoelectronic properties, are also discussed.

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Ramya, K. "Radar Absorbing Material (RAM)." Applied Mechanics and Materials 390 (August 2013): 450–53. http://dx.doi.org/10.4028/www.scientific.net/amm.390.450.

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This paper briefly outlines the research and development activities in radar absorbing materials. Military defense scientists to the possibility of using coating materials to render aircraft or other military vehicles less visible to radar and, preferably, to control such visibility. The highly conducting surface of a metal vehicle is an excellent reflector of radar, but an absorbing layer would suppress the radar signal at the receiver station. Radar absorbing material currently in military and commercial use are typically composed of high concentrations of iron powders in a polymer matrix. These materials are both very heavy and very costly, two key limitations to their adoption for many applications. The performance of these coatings, particularly those using spherical particles, is dependent upon how closely the spheres are packed together. Thus the most efficient coating would be one approaching the density of solid iron with a minimum amount of resin included to electrically insulate the particles from one another. That is, the attenuation efficiency increases faster than the weight, so that a thinner coating with the same attenuation, can be used, providing an overall weight savings. Unfortunately, the particles, when produced, are of non-uniform diameter and not necessarily uniformly round. A window member composed of a transparent resin or inorganic glass with a transparent conducting film such as gold or ITO coated, is used as an electromagnetic wave shield window for stealth aircraft. However, the transparent conducting film, especially ceramic transparent conducting film such as ITO does not deform sufficiently to follow the deformation of the window material. Therefore the transparent conducting film might crack even with relatively little deformation, which can occur during an actual flight.

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Calandra, Pietro, Giuseppe Calogero, Alessandro Sinopoli, and Pietro Giuseppe Gucciardi. "Metal Nanoparticles and Carbon-Based Nanostructures as Advanced Materials for Cathode Application in Dye-Sensitized Solar Cells." International Journal of Photoenergy 2010 (2010): 1–15. http://dx.doi.org/10.1155/2010/109495.

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We review the most advanced methods for the fabrication of cathodes for dye-sensitized solar cells employing nanostructured materials. The attention is focused on metal nanoparticles and nanostructured carbon, among which nanotubes and graphene, whose good catalytic properties make them ideal for the development of counter electrode substrates, transparent conducting oxide, and advanced catalyst materials.

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Mohanraj, John, Chetan R. Singh, Tanaji P. Gujar, C. David Heinrich, and Mukundan Thelakkat. "Nanostructured Hybrid Metal Mesh as Transparent Conducting Electrodes: Selection Criteria Verification in Perovskite Solar Cells." Nanomaterials 11, no. 7 (July 9, 2021): 1783. http://dx.doi.org/10.3390/nano11071783.

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Nanostructured metal mesh structures demonstrating excellent conductivity and high transparency are one of the promising transparent conducting electrode (TCE) alternatives for indium tin oxide (ITO). Often, these metal nanostructures are to be employed as hybrids along with a conducting filler layer to collect charge carriers from the network voids and to minimize current and voltage losses. The influence of filler layers on dictating the extent of such ohmic loss is complex. Here, we used a general numerical model to correlate the sheet resistance of the filler, lateral charge transport distance in network voids, metal mesh line width and ohmic losses in optoelectronic devices. To verify this correlation, we prepared gold or copper network electrodes with different line widths and different filler layers, and applied them as TCEs in perovskite solar cells. We show that the photovoltaic parameters scale with the hybrid metal network TCE properties and an Au-network or Cu-network with aluminum-doped zinc oxide (AZO) filler can replace ITO very well, validating our theoretical predictions. Thus, the proposed model could be employed to select an appropriate filler layer for a specific metal mesh electrode geometry and dimensions to overcome the possible ohmic losses in optoelectronic devices.

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Dorow-Gerspach, Daniel, and Matthias Wuttig. "Metal-like conductivity in undoped TiO2-x: Understanding an unconventional transparent conducting oxide." Thin Solid Films 669 (January 2019): 1–7. http://dx.doi.org/10.1016/j.tsf.2018.10.026.

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Ohodnicki, Paul R., Congjun Wang, and Mark Andio. "Plasmonic transparent conducting metal oxide nanoparticles and nanoparticle films for optical sensing applications." Thin Solid Films 539 (July 2013): 327–36. http://dx.doi.org/10.1016/j.tsf.2013.04.145.

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29

Kang, Tae-Woon, Sung Hyun Kim, Cheol Hwan Kim, Sang-Mok Lee, Han-Ki Kim, Jae Seong Park, Jae Heung Lee, Yong Suk Yang, and Sang-Jin Lee. "Flexible Polymer/Metal/Polymer and Polymer/Metal/Inorganic Trilayer Transparent Conducting Thin Film Heaters with Highly Hydrophobic Surface." ACS Applied Materials & Interfaces 9, no. 38 (September 14, 2017): 33129–36. http://dx.doi.org/10.1021/acsami.7b09837.

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30

Anagha, P., Monu Kinha, Amit Khare, and D. S. Rana. "Precise measurement of correlation parameters driving optical transparency in CaVO₃ thin film by steady state and time resolved terahertz spectroscopy." Journal of Applied Physics 132, no. 3 (July 21, 2022): 033102. http://dx.doi.org/10.1063/5.0091664.

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Transparent conducting materials are inevitable in the fast-developing optoelectronic and photovoltaic industries. Correlated metals are emerging classes of materials that possess a charge density comparable to the metals in which the correlation effects provide transparency. So, understanding the fundamental physics of these materials is equally important to improve the performance of devices. We have investigated the low energy and non-equilibrium dynamics of the CaVO3 (CVO) thin film using terahertz time-domain and time-resolved terahertz spectroscopic measurements. Though the electrical resistivity of the CVO thin film shows a Fermi liquid-like signature, the terahertz conductivity dynamics unveil the presence of metal-insulator transition. Furthermore, the mass renormalization effects indicate the competition between electron correlations and phonon interactions in driving the ground state of this system. It is clear that the relaxation of photo-excited carriers is through electron–phonon thermalization, and comprehensive studies show the metallic nature of the system with electron correlations. Thus, the extracted optical and electrical parameters of CVO are comparable with the existing transparent conducting materials and, hence, make this system another potential candidate for transparent electronics.

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Song, Jinkyu, Mee-Ree Kim, Youngtae Kim, Darae Seo, Kyungryul Ha, Tae-Eun Song, Wan-Gyu Lee, et al. "Fabrication of junction-free Cu nanowire networks via Ru-catalyzed electroless deposition and their application to transparent conducting electrodes." Nanotechnology 33, no. 6 (November 18, 2021): 065303. http://dx.doi.org/10.1088/1361-6528/ac353d.

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Abstract Over the past few years, metal nanowire networks have attracted attention as an alternative to transparent conducting oxide materials such as indium tin oxide for transparent conducting electrode applications. Recently, electrodeposition of metal on nanoscale template is widely used for formation of metal network. In the present work, junctionless Cu nanowire networks were simply fabricated on a substrate by forming a nanostructured Ru with 80 nm width as a seed layer, followed by direct electroless deposition of Cu. By controlling the density of Ru nanowires or the electroless deposition time, we readily achieve desired transmittance and sheet resistance values ranging from ∼1 kΩ sq−1 at 99% to 9 Ω sq−1 at 89%. After being transferred to flexible substrates, the nanowire networks exhibited no obvious increase in resistance during 8000 cycles of a bending test to a radius of 2.5 mm. The durability was verified by evaluation of its heating performance. The maximum temperature was greater than 180 °C at 3 V and remained constant after three repeated cycles and for 10 min. Transmission electron microscopy and x-ray diffraction studies revealed that the adhesion between the electrolessly deposited Cu and the seed Ru nanowires strongly influenced the durability of the core–shell structured nanowire-based heaters.

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Woo, Yun. "Transparent Conductive Electrodes Based on Graphene-Related Materials." Micromachines 10, no. 1 (December 26, 2018): 13. http://dx.doi.org/10.3390/mi10010013.

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Transparent conducting electrodes (TCEs) are the most important key component in photovoltaic and display technology. In particular, graphene has been considered as a viable substitute for indium tin oxide (ITO) due to its optical transparency, excellent electrical conductivity, and chemical stability. The outstanding mechanical strength of graphene also provides an opportunity to apply it as a flexible electrode in wearable electronic devices. At the early stage of the development, TCE films that were produced only with graphene or graphene oxide (GO) were mainly reported. However, since then, the hybrid structure of graphene or GO mixed with other TCE materials has been investigated to further improve TCE performance by complementing the shortcomings of each material. This review provides a summary of the fabrication technology and the performance of various TCE films prepared with graphene-related materials, including graphene that is grown by chemical vapor deposition (CVD) and GO or reduced GO (rGO) dispersed solution and their composite with other TCE materials, such as carbon nanotubes, metal nanowires, and other conductive organic/inorganic material. Finally, several representative applications of the graphene-based TCE films are introduced, including solar cells, organic light-emitting diodes (OLEDs), and electrochromic devices.

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Leftheriotis, G., E. Koubli, and P. Yianoulis. "Combined electrochromic-transparent conducting coatings consisting of noble metal, dielectric and WO3 multilayers." Solar Energy Materials and Solar Cells 116 (September 2013): 110–19. http://dx.doi.org/10.1016/j.solmat.2013.04.013.

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Kim, Hyuncheol, Seok-Joo Wang, Hyung-Ho Park, Ho Jung Chang, Hyeongtag Jeon, and Ross Henry Hill. "Study of Ag nanoparticles incorporated SnO2 transparent conducting films by photochemical metal–organic deposition." Thin Solid Films 516, no. 2-4 (December 2007): 198–202. http://dx.doi.org/10.1016/j.tsf.2007.07.003.

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Sohn, Hong Yong, and Arun Murali. "Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films." Molecules 26, no. 5 (March 7, 2021): 1456. http://dx.doi.org/10.3390/molecules26051456.

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This article reviews and summarizes work recently performed in this laboratory on the synthesis of advanced transparent conducting oxide nanopowders by the use of plasma. The nanopowders thus synthesized include indium tin oxide (ITO), zinc oxide (ZnO) and tin-doped zinc oxide (TZO), aluminum-doped zinc oxide (AZO), and indium-doped zinc oxide (IZO). These oxides have excellent transparent conducting properties, among other useful characteristics. ZnO and TZO also has photocatalytic properties. The synthesis of these materials started with the selection of the suitable precursors, which were injected into a non-transferred thermal plasma and vaporized followed by vapor-phase reactions to form nanosized oxide particles. The products were analyzed by the use of various advanced instrumental analysis techniques, and their useful properties were tested by different appropriate methods. The thermal plasma process showed a considerable potential as an efficient technique for synthesizing oxide nanopowders. This process is also suitable for large scale production of nano-sized powders owing to the availability of high temperatures for volatilizing reactants rapidly, followed by vapor phase reactions and rapid quenching to yield nano-sized powder.

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Qin, Fei, and Sunghwan Lee. "(Digital Presentation) Investigation of Top Electrodes Impact on Performance of Transparent Amorphous Indium Gallium Zinc Oxide (a-InGaZnO) Based Resistive Random Access Memory." ECS Meeting Abstracts MA2022-01, no. 19 (July 7, 2022): 1075. http://dx.doi.org/10.1149/ma2022-01191075mtgabs.

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The traditional von Neumann architecture limits the increase in computing efficiency and results in massive power consumption in modern computers due to the separation of storage and processing units. The novel neuromorphic computation system, an in-memory computing architecture with low power consumption, is aimed to break the bottleneck and meet the needs of the next generation of artificial intelligence (AI) systems. Thus, it is urgent to find a memory technology to implement the neuromorphic computing nanosystem. Nowadays, the silicon-based flash memory dominates non-volatile memory market, however, it is facing challenging issues to achieve the requirements of future data storage device development due to the drawbacks, such as scaling issue, relatively slow operation speed, and high voltage for program/erase operations. The emerging resistive random-access memory (RRAM) has prompted extensive research as its simple two-terminal structure, including top electrode (TE) layer, bottom electrode (BE) layer, and an intermediate resistive switching (RS) layer. It can utilize a temporary and reversible dielectric breakdown to cause the RS phenomenon between the high resistance state (HRS) and the low resistance state (LRS). RRAM is expected to outperform conventional memory device with the advantages, notably its low-voltage operation, short programming time, great cyclic stability, and good scalability. Among the materials for RS layer, indium gallium zinc oxide (IGZO) has shown attractive prospects in abundance and high atomic diffusion property of oxygen atoms, transparency. Additionally, its electrical properties can be easily modulated by controlling the stoichiometric ratio of indium and gallium as well as oxygen potential in the sputter gas. Moreover, since the IGZO can be applied to both the thin-film transistor (TFT) channel and RS layer, it has a great potential for fully integrated transparent electronics application. In this work, we proposed amorphous transparent IGZO-based RRAMs and investigated switching behaviors of the memory cells prepared with different top electrodes. First, ITO was choosing to serve as both TE and BE to achieve high transmittance. A multi-target magnetron sputtering system was employed to deposit all three layers (TE, RS, BE layers) on glass substrate. I-V characteristics were evaluated by a semiconductor parameter analyzer, and the bipolar RS feature of our RRAM devices was demonstrated by typical butterfly curves. The optical transmission analysis was carried out via a UV-Vis spectrometer and the average transmittance was around 80% out of entire devices in the visible-light wavelength range, implying high transparency. We adjusted the oxygen partial pressure during the sputtering of IGZO to optimize the property because the oxygen vacancy concentration governs the RS performance. Electrode selection is crucial and can impact the performance of the whole device. Thus, Cu TE was chosen for our second type of device because the diffusion of Cu ions can be beneficial for the formation of the conductive filament (CF). A ~5 nm SiO2 barrier layer was employed between TE and RS layers to confine the diffusion of Cu into the RS layer. At the same time, this SiO2 inserting layer can provide an additional interfacial series resistance in the device to lower the off current, consequently, improve the on/off ratio and whole performance. Finally, an oxygen affinity metal Ti was selected as the TE for our third type of device because the concentration of the oxygen atoms can be shifted towards the Ti electrode, which provides an oxygengettering activity near the Ti metal. This process may in turn lead to the formation of a sub-stoichiometric region in the neighboring oxide that is believed to be the origin of better performance. In conclusion, the transparent amorphous IGZO-based RRAMs were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of RRAMs, we integrated a set of TE materials, and a barrier layer on IGZO-based RRAM and compared the switch characteristics. Our encouraging results clearly demonstrate that IGZO is a promising material in RRAM applications and breaking the bottleneck of current memory technologies.

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Ko, Yoon Duk, Chang Hun Lee, Doo Kyung Moon, and Young Sung Kim. "Oxygen effect of transparent conducting amorphous Indium Zinc Tin Oxide films on Polyimide substrate for flexible electrode." Thin Solid Films 547 (November 2013): 32–37. http://dx.doi.org/10.1016/j.tsf.2013.05.069.

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Wang, Chunyu, Volker Cimalla, Genady Cherkashinin, Henry Romanus, Majdeddin Ali, and Oliver Ambacher. "Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition." Thin Solid Films 515, no. 5 (January 2007): 2921–25. http://dx.doi.org/10.1016/j.tsf.2006.08.030.

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Bandara, A. J., and J. Curley. "New Electrically Conducting Polymeric Fillers." Polymers and Polymer Composites 5, no. 8 (November 1997): 549–53. http://dx.doi.org/10.1177/096739119700500803.

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Conducting polymers have been known since the early 1940s. They have been made by incorporating a randomly dispersed conducting filler into a polymer matrix to form conducting composites. The traditional fillers are carbon black, graphite, and metal powders etc. Over the past two decades, a multitude of intrinsically conducting polymers have been developed, such as poly(p-phenylene vinylene), poly(p-phenylene sulfide), polypyrrole, polythiophene, and polyquinoline (ladder polymers). The structural features which endow conductivity also cause processing problems which make the direct use of these polymers difficult. It is essential to overcome these problems and one solution is to use the conducting polymers as particulate fillers for otherwise insulating plastics. A variety of novel intrinsically conducting polymers have been synthesised and this paper reports the electrical conductivity of the filled systems. Another method of producing conducting composites has been investigated, involving immersing polymer films containing monomers such as pyrrole or aniline into various aqueous oxidant solutions. One advantage of this method is that highly transparent conducting films can be prepared.

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Kim, Jin Yong, Hyeong-Ho Park, A. Sivasankar Reddy, Ho Jung Chang, Hyeongtag Jeon, Youngchul Chang, and Hyung-Ho Park. "Electromagnetic shielder compatible ZnO transparent conducting oxides hybridized with various sizes of Ag metal nanoparticles." Ceramics International 34, no. 4 (May 2008): 1055–58. http://dx.doi.org/10.1016/j.ceramint.2007.09.075.

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Li, Chen, and Hu. "An Optically Transparent Metasurface-Based Resonant Cavity Fed by Patch Antenna for Improved Gain." Materials 12, no. 23 (November 20, 2019): 3805. http://dx.doi.org/10.3390/ma12233805.

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An optically transparent metasurface (MS) is proposed to design a resonant cavity fed by a patch antenna operating at 5.6 GHz. In the proposed MS, a transparent micro metal mesh conductive (MMMC) film is used as the transparent conducting film (TCF), and it has a high optical transmittance of more than 75% and a low sheet resistance of 0.7 Ω/sq. The MS is composed of a layer of glass substrate and a layer of MMMC film. The unit cell of MS consists of a square patch using MMMC film patterned on a square glass substrate. The transparent MS, patch antenna, ground plane, and air-filled half-wavelength cavity form a resonant cavity antenna, to achieve an improved gain. The MS is designed, optimized and analyzed using the EM simulation software CST. Results show that the MS can improve the simulated boresight gain from 4.7 to 13.2 dBi by 8.5 dB, without affecting the impedance bandwidth (IMBW) much. The losses of MS with different values of sheet resistance are also studied, showing the MS using MMMC with sheet resistance of 0.7 Ω/sq has very small losses.

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Kiruthika, S., K. D. M. Rao, Ankush Kumar, Ritu Gupta, and G. U. Kulkarni. "Metal wire network based transparent conducting electrodes fabricated using interconnected crackled layer as template." Materials Research Express 1, no. 2 (April 3, 2014): 026301. http://dx.doi.org/10.1088/2053-1591/1/2/026301.

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Xu, Jian, Jian-Bo Liu, Bai-Xin Liu, Shun-Ning Li, Su-Huai Wei, and Bing Huang. "Design of n-Type Transparent Conducting Oxides: The Case of Transition Metal Doping in In2 O3." Advanced Electronic Materials 4, no. 3 (February 1, 2018): 1700553. http://dx.doi.org/10.1002/aelm.201700553.

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44

Lim, Chan Kyu, Yo Seb Lee, Sung Hoon Choa, Deuk Young Lee, Lee Soon Park, and Su Yong Nam. "Effect of Polymer Binder on the Transparent Conducting Electrodes on Stretchable Film Fabricated by Screen Printing of Silver Paste." International Journal of Polymer Science 2017 (2017): 1–6. http://dx.doi.org/10.1155/2017/9623620.

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Smart wearable devices and sensors have been fabricated by screen printing of metal paste as functional circuits since the metal interconnects exhibited much less electrical resistance than other conducting materials such as carbon nanotube or conducting polymers (PEDOT:PSS). In this study, we chose silver particle as conductive material in the form of silver paste and used screen printing to fabricate a stretchable touch screen panel utilizing metal mesh method for the transparent electrode patterning. The rheological study of Ag pastes showed that the binder polymer with high molecular weight and low glass transition temperature (Tg) can stabilize the Ag paste with Ag particle content over 80% by weight. The stretching and bending tests of Ag electrode films obtained by screen printing indicated that good conductivity of Ag electrodes is related to the stability of Ag paste obtained with the high molecular weight binder polymer.

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Tiwari, Alok, and Ming-Show Wong. "Role of oxygen partial pressure on structure and properties of sputtered transparent conducting films of La-doped BaSnO3." Thin Solid Films 703 (June 2020): 137986. http://dx.doi.org/10.1016/j.tsf.2020.137986.

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Sato, Yuichi, and Tatsuya Matsunaga. "Properties of GaN-Related Epitaxial Thin Films Grown on Sapphire Substrates as Transparent Conducting Electrodes." Materials Science Forum 783-786 (May 2014): 1652–57. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.1652.

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Thin films of gallium nitride (GaN) and related nitride materials were prepared, and their properties as transparent conducting electrodes were investigated. GaN thin films were directly grown on sapphire single crystal substrates by the molecular beam epitaxy. Heavy doping of germanium was employed to reduce resistivity of the films, with sufficient reduction found to be possible while maintaining their epitaxial growth state. Optical transmission spectra of the films in the short wavelength region were slightly deteriorated by the heavy doping; however, this was successfully improved by growing GaN films under metal-rich conditions to increase the electron mobility and suppress unwanted increase of the carrier densities. In addition, the optical transmission spectra in the short wavelength region was improved also by alloying GaN with aluminum nitride, though the resistivities of these films were relatively higher than those of the unmodified GaN films. The prepared nitride thin films exhibited sufficiently suitable properties as transparent conducting electrodes for use in applications such as full-spectrum nitride-based solar cells.

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Chao, Jia Feng, Yong Qiang Meng, Jing Bing Liu, Qian Qian Zhang, and Hao Wang. "Review on the Synthesis and Antioxidation of Cu Nanowires for Transparent Conductive Electrodes." Nano 14, no. 04 (April 2019): 1930005. http://dx.doi.org/10.1142/s1793292019300056.

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Transparent conducting films based on solution-synthesized copper nanowires (Cu NWs) are considered to be an attractive alternative to indium tin oxide (ITO) due to the relative abundance of Cu and the low cost of solution-phase NW coating processes. Moreover, transparent electrodes tend to be flexible. This makes Cu NWs more attractive because ITO is brittle and can not meet the requirements of flexibility. For Cu NWs, aspect ratio is an important property. Cu NWs can be directly prepared by chemical reduction with various reducing agents and suitable capping agents. In general, the selectivity of the capping agent is very important for the formation of one-dimensional nanostructures because it plays a major role in the thermodynamic regulations and growth kinetics that influence the geometry and morphology of the crystal facets. Therefore, different aspect ratios are formed. Conductivity is the most important property for transparent electrodes. Organic pickling, annealing and glare pulses have a certain improvement in conductivity. Meanwhile, it is also essential to increase the oxidation resistance of the transparent electrode. The reduction of graphene oxide (r-GO), the coating of metal and polymer improve the oxidation resistance of the transparent electrode to varying degrees. This paper reviews the effect of different capping agents on the aspect ratio of NWs, and the effects of different post-treatments on oxidation resistance and conductivity of transparent electrodes.

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Gikonyo, Ben, Fangbing Liu, Saly Hawila, Aude Demessence, Herme G. Baldovi, Sergio Navalón, Catherine Marichy, and Alexandra Fateeva. "Porphyrin-Based MOF Thin Film on Transparent Conducting Oxide: Investigation of Growth, Porosity and Photoelectrochemical Properties." Molecules 28, no. 15 (August 4, 2023): 5876. http://dx.doi.org/10.3390/molecules28155876.

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Synthesizing metal-organic frameworks (MOFs) composites with a controlled morphology is an important requirement to access materials of desired patterning and composition. Since the last decade, MOF growth from sacrificial metal oxide layer is increasingly developed as it represents an efficient pathway to functionalize a large number of substrates. In this study, porphyrin-based Al-PMOF thin films were grown on conductive transparent oxide substrates from sacrificial layers of ALD-deposited alumina oxide. The control of the solvent composition and the number of atomic layer deposition (ALD) cycles allow us to tune the crystallinity, morphology and thickness of the produced thin films. Photophysical studies evidence that Al-PMOF thin films present light absorption and emission properties governed by the porphyrinic linker, without any quenching upon increasing the film thickness. Al-PMOF thin films obtained through this methodology present a remarkably high optical quality both in terms of transparency and coverage. The porosity of the samples is demonstrated by ellipsometry and used for Zn(II) insertion inside the MOF thin film. The multifunctional transparent, porous and luminescent thin film grown on fluorine-doped tin oxide (FTO) is used as an electrode capable of photoinduced charge separation upon simulated sunlight irradiation.

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Ham, Juyoung, and Jong-Lam Lee. "ITO Breakers: Highly Transparent Conducting Polymer/Metal/Dielectric (P/M/D) Films for Organic Solar Cells." Advanced Energy Materials 4, no. 15 (May 30, 2014): 1400539. http://dx.doi.org/10.1002/aenm.201400539.

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Elshorbagy, Mahmoud H., and Rehab Ramadan. "Electrochromic Electrodes with Enhanced Performance: Review of Morphology and Ion Transport Mechanism Modifications." Energies 16, no. 5 (February 28, 2023): 2327. http://dx.doi.org/10.3390/en16052327.

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The electrochromic (EC) performance of smart windows is highly dependent on the rate of ions insertion/extraction. A direct way to increase the ion exchange in EC device is to modify the structure of the EC electrodes. Structural changes also affect the electrical conduction between the transparent electrodes and the EC layers, leading to efficient smart windows. In more detail, modifying the structure of the EC electrodes results in an increase in the surface-to-volume ratio, which is combined with the increase in charge transfer reaction between the insertion and extraction of ions. The current review summarizes the enhancement in the EC performance due to the fabrication of nano/microstructures or hybrid structures on the surface of the EC electrodes to increase their surface area. Moreover, metal oxide thin films have poor electrical conduction, which leads to a high charge transport barrier. Accordingly, improving the electrical conductivity of the EC layer is considered another effective strategy to enhance the ion transport between the transparent conductor layer and the EC electrode. This behavior could be applied by combining the transition metal oxide with metallic nanoparticles or suitable organic/inorganic transparent conducting materials.

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