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Books on the topic 'Metal oxide semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 July 2024

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1

Nicollian, E. H. MOS (metal oxide semiconductor) physics and technology. Hoboken, N.J: Wiley-Interscience, 2003.

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2

J, Dumin D., ed. Oxide reliability: A summary of silicon oxide wearout, breakdown, and reliability. [River Edge, NJ]: World Scientific, 2002.

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3

Sato, Norio. Electrochemistry at metal and semiconductor electrodes. Amsterdam: Elsevier, 1998.

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4

Zhao, Yi. Wafer level reliability of advanced CMOS devices and processes. New York: Nova Science Publishers, 2008.

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5

Lancaster, Don. CMOS cookbook. 2nd ed. Indianapolis, Ind: H.W. Sams, 1988.

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6

Pfaffli, Paul. Characterisation of degradation and failure phenomena in MOS devices. Konstanz [Germany]: Hartung-Gorre, 1999.

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7

T, Andre Noah, and Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.

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8

Korec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.

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9

Paul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.

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10

Shoji, Masakazu. CMOS digital circuit technology. Englewood Cliffs, N.J: Prentice Hall, 1988.

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11

Helms, Harry L. High-speed (HC/HCT) CMOS guide. Englewood Cliffs, N.J: Prentice Hall, 1989.

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12

Kwon, Min-jun. CMOS technology. Hauppauge, N.Y: Nova Science Publishers, 2010.

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13

Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.

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14

1951-, Walsh M. J., ed. Choosing and using CMOS. London: Collins, 1985.

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15

(Firm), Signetics. High-speed CMOS data manual. Sunnyvale, Calif: Signetics Corp., 1988.

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16

(Firm), Signetics. High-speed CMOS data manual. Sunnyvale, Calif: Signetics Corp., 1988.

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17

Peluso, Vincenzo. Design of low-voltage low-power CMOS Delta-Sigma A/D converters. Boston: Kluwer Academic Publishers, 1999.

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18

International, Symposium on Advanced Gate Stack Source/Drain and Channel Engineering for Si-based CMOS (2nd 2006 Cancún Mexico). Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 2: New materials, processes and equipment. Pennington, NJ: Electrochemical Society, 2006.

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19

Minoru, Fujishima, ed. Design and modeling of millimeter-wave CMOS circuits for wireless transceivers: Era of sub-100nm technology. Dordrecht: Springer Science+Business Media, 2008.

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20

Behzad, Razavi, ed. High-speed CMOS circuits for optical receivers. Boston: Kluwer Academic Publishers, 2001.

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21

Ballan, Hussein. High voltage devices and circuits in standard CMOS technologies. Boston: Kluwer Academic, 1999.

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22

Shoji, Masakazu. CMOS digital circuit technology. New Jersey: Prentice-Hall International, 1988.

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23

Paul, Vande Voorde, and Hewlett-Packard Laboratories, eds. Extension of bandgap broadening model for quantum mechanical correction in sub-quarter micron MOS devices to accumulation layer. Palo Alto, CA: Hewlett-Packard Laboratories, Technical Publications Department, 1996.

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24

G, Einspruch Norman, and Gildenblat Gennady Sh, eds. Advanced MOS device physics. San Diego: Academic Press, 1989.

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25

1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.

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26

Majkusiak, Bogdan. Bardzo cienki tlenek bramkowy w tranzystorze MOS--konsekwencje dla działania i modelowania. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1991.

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27

1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.

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28

1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.

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29

Symposium, MM "Transparent Conducting Oxides and Applications." Transparent conducting oxides and applications: Symposium held November 29-December 3 [2010], Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2012.

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30

Rumak, N. V. Sistema kremniĭ--dvuokisʹ kremnii͡a︡ v MOP-strukturakh. Minsk: "Nauka i tekhnika", 1986.

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31

Kursun, Volkan. Multiple supply and threshold voltage CMOS circuits. Chichester, England: John Wiley, 2006.

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32

L, Helms Harry, ed. CMOS devices: 1987 source book. Englewood Cliffs, N.J: Technipubs, 1987.

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33

Klar, Heinrich. Integrierte digitale Schaltungen MOS/BICMOS. 2nd ed. Berlin: Springer, 1996.

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34

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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35

Jürgen, Mattausch Hans, and Ezaki Tatsuya, eds. The physics and modeling of MOSFETS: Surface-potential model HiSIM. Singapore: World Scientific, 2008.

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36

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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37

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2011.

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38

Josʹe M. de la Rosa. Systematic design of CMOS switched-current bandpass sigma-delta modulators for digital communication chips. Boston: Kluwer Academic, 2002.

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39

Sialm, Gion. VCSEL modeling and CMOS transmitters up to 40 Gb/s for high-density optical links. Konstanz: Hartung-Gorre, 2007.

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40

Pearton, Stephen J., Chennupati Jagadish, and Bengt G. Svensson. Oxide Semiconductors. Elsevier Science & Technology Books, 2013.

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41

Pearton, Stephen, Chennupati Jagadish, and Bengt G. Svensson. Oxide Semiconductors. Elsevier Science & Technology Books, 2013.

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42

Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability. World Scientific Publishing Co Pte Ltd, 2002.

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43

Nanostructured Semiconductors. Elsevier Science & Technology, 2018.

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44

Zhuiykov, Serge. Nanostructured Semiconductors. Elsevier Science & Technology, 2018.

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45

Oxide Semiconductors: Volume 1633. Materials Research Society, 2014.

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46

Zang, Z. Metal Oxide Semiconductors - Synthesis, Properties, and Devices. Wiley & Sons, Limited, John, 2023.

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47

Zang, Zhigang, and Wensi Cai. Metal Oxide Semiconductors: Synthesis, Properties, and Devices. Wiley & Sons, Incorporated, John, 2024.

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48

Zang, Zhigang, and Wensi Cai. Metal Oxide Semiconductors: Synthesis, Properties, and Devices. Wiley & Sons, Incorporated, John, 2023.

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49

Zang, Zhigang, and Wensi Cai. Metal Oxide Semiconductors: Synthesis, Properties, and Devices. Wiley & Sons, Incorporated, John, 2023.

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50

Sato, Norio. Electrochemistry at Metal and Semiconductor Electrodes. Elsevier Science & Technology Books, 1998.

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