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Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal-oxide-based thin-film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide-based thin-film transistors developed with high compatibility for integration to newly reported applications.
AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions, systematic variations in the device characteristics with the Al mole fraction were confirmed, proving the potential utility of the device architecture combining two-dimensional materials, rGO, and nitride semiconductors.
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Díaz, Carlos, Marjorie Segovia, and Maria Luisa Valenzuela. "Solid State Nanostructured Metal Oxides as Photocatalysts and Their Application in Pollutant Degradation: A Review." Photochem 2, no. 3 (August 5, 2022): 609–27. http://dx.doi.org/10.3390/photochem2030041.
Most dyes used in various industries are toxic and carcinogenic, thus posing a serious hazard to humans as well as to the marine ecosystem. Therefore, the impact of dyes released into the environment has been studied extensively in the last few years. Heterogeneous photocatalysis has proved to be an efficient tool for degrading both atmospheric and aquatic organic contaminants. It uses the sunlight in the presence of a semiconductor photocatalyst to accelerate the remediation of environmental contaminants and the destruction of highly toxic molecules. To date, photocatalysis has been considered one of the most appealing options for wastewater treatment due to its great potential and high efficiency by using sunlight to remove organic pollutants and harmful bacteria with the aid of a solid photocatalyst. Among the photocatalysts currently used, nanostructured metal oxide semiconductors have been among the most effective. This review paper presents an overview of the recent research improvements on the degradation of dyes by using nanostructured metal oxide semiconductors obtained by a solid-state method. Metal oxides obtained by this method exhibited better photocatalytic efficiency than nanostructured metal oxides obtained using other solution methods in several cases. The present review discusses examples of various nanostructured transition metal oxides—such as TiO2, Fe2O3, NiO, ReO3, IrO2, Rh2O3, Rh/RhO2, and the actinide ThO2—used as photocatalysts on methylene blue. It was found that photocatalytic efficiency depends not only on the bandgap of the metal oxide but also on its morphology. Porous nanostructured metal oxides tend to present higher photocatalytic efficiency than metal oxides with a similar band gap.
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Robertson, John, and Zhaofu Zhang. "Doping limits in p-type oxide semiconductors." MRS Bulletin 46, no. 11 (November 2021): 1037–43. http://dx.doi.org/10.1557/s43577-021-00211-3.
AbstractThe ability to dope a semiconductor depends on whether the Fermi level can be moved into its valence or conduction bands, on an energy scale referred to the vacuum level. For oxides, there are various suitable n-type oxide semiconductors, but there is a marked absence of similarly suitable p-type oxides. This problem is of interest not only for thin-film transistors for displays, or solar cell electrodes, but also for back-end-of-line devices for the semiconductor industry. This has led to a wide-ranging search for p-type oxides using high-throughput calculations. We note that some proposed p-type metal oxides have cation s-like lone pair states. The defect energies of some of these oxides were calculated in detail. The example SnTa2O6 is of interest, but others have structures more closely based on perovskite structure and are found to have more n-type than p-type character. Graphic abstract
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Matsumoto, Y., H. Koinuma, T. Hasegawa, I. Takeuchi, F. Tsui, and Young K. Yoo. "Combinatorial Investigation of Spintronic Materials." MRS Bulletin 28, no. 10 (October 2003): 734–39. http://dx.doi.org/10.1557/mrs2003.215.
AbstractHigh-throughput synthesis and characterization techniques have been effective in discovering new materials and performing rapid mapping of phase diagrams. The application of the combinatorial strategy to explore doped transition-metal oxides has led to the discovery of a transparent room-temperature ferromagnetic oxide in Co-doped anatase TiO2. The discovery has triggered a wave of studies into other metal oxide systems in pursuit of diluted magnetic semiconductors. In this article, we describe recent combinatorial studies of magnetic transition-metal oxides, germanium-based magnetic semiconductors, and Heusler alloys.
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Kim, Jungho, and Jiwan Kim. "Synthesis of NiO for various optoelectronic applications." Ceramist 25, no. 3 (September 30, 2022): 320–31. http://dx.doi.org/10.31613/ceramist.2022.25.3.02.
Oxide semiconductors have developed rapidly in a short period of time in various industrial fields due to their ability to be easily manufactured at low temperatures and recoverability of electrical properties. Among these oxide semiconductors, nickel oxide (NiO) is one of the most studied transition metal oxides. NiO is a p-type semiconductor with a wide band gap at room temperature, and has advantages of low toxicity, low cost, and excellent stability. Due to these advantages, NiO is widely used in various industrial fields such as gas sensors. In this paper, various synthesis methods of NiO will be briefly reviewed. Such synthesis methods include organic solvent methods, chemical vapor deposition methods, sol-gel methods, and chemical solution deposition methods. Materials required for each synthesis method, experimental methods, post-processing, and experimental results are briefly described.
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Adhikari, Sangeeta, and Debasish Sarkar. "Metal oxide semiconductors for dye degradation." Materials Research Bulletin 72 (December 2015): 220–28. http://dx.doi.org/10.1016/j.materresbull.2015.08.009.
The presence of heavy metals in wastewater, such as Ni, Pb, Cd, V, Cr, and Cu, is a serious environmental problem. This kind of inorganic pollutant is not biodegradable for several years, and its harmful effect is cumulative. Recently, semiconductor nanomaterials based on metal oxides have gained interest due to their efficiency in the removal of heavy metals from contaminated water, by inducing photocatalytic ion reduction when they absorb light of the appropriate wavelength. The most commonly applied semiconductor oxides for these purposes are titanium oxide (TiO2), zinc oxide (ZnO), and binary nanomaterials composed of both types of oxides. The main purpose of this work is to critically analyse the existent literature concerning this topic focusing specially in the most important factors affecting the adsorption or photocatalytic capacities of this type of nanomaterials. In particular, photocatalytic activity is altered by various factors, such as proportion of polymorphs, synthesis method, surface area, concentration of defects and particle size, among others. After a survey of the actual literature, it was found that, although these metal oxides have low absorption capacity for visible light, it is possible to obtain an acceptable heavy metal reduction performance by sensitization with dyes, doping with metallic or nonmetallic atoms, introduction of defects, or the coupling of two or more semiconductors.
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Ye, Heqing, Hyeok-Jin Kwon, Xiaowu Tang, Dong Yun Lee, Sooji Nam, and Se Hyun Kim. "Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing." Nanomaterials 10, no. 7 (July 3, 2020): 1304. http://dx.doi.org/10.3390/nano10071304.
The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology.
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Garcia-Peiro, Jose I., Javier Bonet-Aleta, Carlos J. Bueno-Alejo, and Jose L. Hueso. "Recent Advances in the Design and Photocatalytic Enhanced Performance of Gold Plasmonic Nanostructures Decorated with Non-Titania Based Semiconductor Hetero-Nanoarchitectures." Catalysts 10, no. 12 (December 14, 2020): 1459. http://dx.doi.org/10.3390/catal10121459.
Plasmonic photocatalysts combining metallic nanoparticles and semiconductors have been aimed as versatile alternatives to drive light-assisted catalytic chemical reactions beyond the ultraviolet (UV) regions, and overcome one of the major drawbacks of the most exploited photocatalysts (TiO2 or ZnO). The strong size and morphology dependence of metallic nanostructures to tune their visible to near-infrared (vis-NIR) light harvesting capabilities has been combined with the design of a wide variety of architectures for the semiconductor supports to promote the selective activity of specific crystallographic facets. The search for efficient heterojunctions has been subjected to numerous studies, especially those involving gold nanostructures and titania semiconductors. In the present review, we paid special attention to the most recent advances in the design of gold-semiconductor hetero-nanostructures including emerging metal oxides such as cerium oxide or copper oxide (CeO2 or Cu2O) or metal chalcogenides such as copper sulfide or cadmium sulfides (CuS or CdS). These alternative hybrid materials were thoroughly built in past years to target research fields of strong impact, such as solar energy conversion, water splitting, environmental chemistry, or nanomedicine. Herein, we evaluate the influence of tuning the morphologies of the plasmonic gold nanostructures or the semiconductor interacting structures, and how these variations in geometry, either individual or combined, have a significant influence on the final photocatalytic performance.
Wu, Kehuey. "Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET /." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.
Liu, Kou-chen. "Si1-xGex/Si vertical MOSFETs and sidewall strained Si devices : design and fabrication /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Höhr, Timm. "Quantum-mechanical modeling of transport parameters for MOS devices /." Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.
Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228. Summary in German and English, text in English. Includes bibliographical references (p. 123-132).
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Gurcan, Zeki B. "0.18 [mu]m high performance CMOS process optimization for manufacturability /." Online version of thesis, 2005. http://hdl.handle.net/1850/5197.
Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. Includes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.
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Wu, Xu Sheng. "Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.
Modzelewski, Kenneth Paul. "DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /." Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.
Trivedi, Vishal P. "Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.
Janotti, A., J. B. Varley, J. L. Lyons, and C. G. Van de Walle. "Controlling the Conductivity in Oxide Semiconductors." In Functional Metal Oxide Nanostructures, 23–35. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_2.
Baratto, Camilla, Elisabetta Comini, Guido Faglia, Matteo Ferroni, Andrea Ponzoni, Alberto Vomiero, and Giorgio Sberveglieri. "Transparent Metal Oxide Semiconductors as Gas Sensors." In Transparent Electronics, 417–42. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch17.
Fukumura, Tomoteru, and Masashi Kawasaki. "Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds." In Functional Metal Oxides, 89–131. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.
Swapnalin, Jhilmil, Prasun Banerjee, Chetana Sabbanahalli, Dinesh Rangappa, Kiran Kumar Kondamareddy, and Dharmapura H. K. Murthy. "Computational Techniques on Optical Properties of Metal-Oxide Semiconductors." In Optical Properties and Applications of Semiconductors, 155–66. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003188582-10.
Jongh, L. J. "Superconductivity by Local Pairs (Bipolarons) in Doped Metal Oxide Semiconductors." In Mixed Valency Systems: Applications in Chemistry, Physics and Biology, 223–46. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3606-8_13.
Ameen, Sadia, M. Shaheer Akhtar, Hyung-Kee Seo, and Hyung Shik Shin. "Metal Oxide Semiconductors and their Nanocomposites Application Towards Photovoltaic and Photocatalytic." In Advanced Energy Materials, 105–66. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118904923.ch3.
Hartnagel, H. L., and V. P. Sirkeli. "The Use of Metal Oxide Semiconductors for THz Spectroscopy of Biological Applications." In IFMBE Proceedings, 213–17. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_43.
Körösi, L., K. Mogyorósi, R. Kun, J. Németh, and I. Dékány. "Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates." In From Colloids to Nanotechnology, 27–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-45119-8_5.
Weik, Martin H. "metal-oxide semiconductor." In Computer Science and Communications Dictionary, 1009. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_11446.
Conference papers on the topic "Metal oxide semiconductors":
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Seo, Young-Ho, Seung-Woo Do, Yong-Hyun Lee, Jae-Sung Lee, Jisoon Ihm, and Hyeonsik Cheong. "Deuterium Process to Improve Gate Oxide Integrity in Metal-Oxide-Silicon (MOS) Structure." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666696.
Satsangi, Vibha R. "Metal oxide semiconductors in PEC splitting of water." In Solar Energy + Applications, edited by Jinghua Guo. SPIE, 2007. http://dx.doi.org/10.1117/12.734795.
Lee, Dong Uk, Seon Pil Kim, Hyo Jun Lee, Dong Seok Han, Eun Kyu Kim, Hee-Wook You, Won-Ju Cho, Young-Ho Kim, Jisoon Ihm, and Hyeonsik Cheong. "Study on transparent and flexible memory with metal-oxide nanocrystals." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666652.
Tristiantoro, Roby, Andani Achmad, and Syafaruddin. "System of Breath Analyzer based on Metal-Oxide Semiconductors." In 2022 6th International Conference on Information Technology, Information Systems and Electrical Engineering (ICITISEE). IEEE, 2022. http://dx.doi.org/10.1109/icitisee57756.2022.10057693.
Balakumar, S., and R. Ajay Rakkesh. "Core/shell nano-structuring of metal oxide semiconductors and their photocatalytic studies." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4790898.
Ng, A., X. Liu, Y. C. Sun, A. B. Djurišić, A. M. C. Ng, and W. K. Chan. "Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848343.
Osseily, Hassan Amine, and Ali Massoud Haidar. "Octal to binary conversion using multi-input floating gate complementary metal oxide semiconductors." In 2011 10th International Symposium on Signals, Circuits and Systems (ISSCS). IEEE, 2011. http://dx.doi.org/10.1109/isscs.2011.5978644.
Zhang, Rui, Linsen Bie, Tze-Ching Fung, Eric Kai-Hsiang Yu, Chumin Zhao, and Jerzy Kanicki. "High performance amorphous metal-oxide semiconductors thin-film passive and active pixel sensors." In 2013 IEEE International Electron Devices Meeting (IEDM). IEEE, 2013. http://dx.doi.org/10.1109/iedm.2013.6724703.
Osseily, Hassan Amine, and Ali Massoud Haidar. "Hexadecimal to binary conversion using multi-input floating gate complementary metal oxide semiconductors." In 2015 International Conference on Applied Research in Computer Science and Engineering (ICAR). IEEE, 2015. http://dx.doi.org/10.1109/arcse.2015.7338134.
Zhang, Yuqing, Zhihe Xia, Jiapeng Li, Yang Shao, Sisi Wang, Lei Lu, Shengdong Zhang, Hoi-Sing Kwok, and Man Wong. "Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors." In 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2020. http://dx.doi.org/10.1109/edtm47692.2020.9117958.
Reports on the topic "Metal oxide semiconductors":
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Bryant, R. E. Two Papers on a Symbolic Analyzer for MOS (Metal-Oxide Semiconductors) Circuits. Fort Belvoir, VA: Defense Technical Information Center, December 1987. http://dx.doi.org/10.21236/ada188617.
Hane, G. J., M. Yorozu, T. Sogabe, and S. Suzuki. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators. Office of Scientific and Technical Information (OSTI), April 1985. http://dx.doi.org/10.2172/5621417.
Wang, Wei. Complimentary Metal Oxide Semiconductor (CMOS)-Memristor Hybrid Nanoelectronics. Fort Belvoir, VA: Defense Technical Information Center, June 2011. http://dx.doi.org/10.21236/ada544310.
Ludeke, R. Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures. Fort Belvoir, VA: Defense Technical Information Center, August 1997. http://dx.doi.org/10.21236/ada329531.
Griffin, Timothy E. Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor. Fort Belvoir, VA: Defense Technical Information Center, November 2006. http://dx.doi.org/10.21236/ada458317.
Lee, Timothy C., and Robert M. Proie. A Subthreshold Digital Library Using a Dynamic-Threshold Metal-Oxide Semiconductor (DTMOS) and Transmission Gate Logic. Fort Belvoir, VA: Defense Technical Information Center, September 2014. http://dx.doi.org/10.21236/ada608589.
Xu, Yang. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS). Fort Belvoir, VA: Defense Technical Information Center, January 2014. http://dx.doi.org/10.21236/ada596171.
