Books on the topic 'Metal oxide semiconductor field-effect transistors'
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Pierret, Robert F. Field effect devices. 2nd ed. Reading, Mass: Addison-Wesley Pub. Co., 1990.
Soclof, Sidney. Metal-oxide-semiconductor field-effect transistors (MOSFETS): Principles and applications. Boston: Artech House, 1996.
Baliga, B. Jayant. Advanced power MOSFET concepts. New York: Springer, 2010.
Croon, Jeroen A. Matching properties of deep sub-micron MOS transistors. New York: Springer, 2005.
Shur, Michael. Physics of semiconductor devices. Englewood Cliffs, N.J: Prentice Hall, 1990.
Korec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.
Paul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.
T, Andre Noah, and Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.
Shur, Michael. Physics of semiconductor devices: Software and manual. London: Prentice-Hall, 1990.
Oktyabrsky, Serge, and Peide D. Ye. Fundamentals of III-V semiconductor MOSFETs. New York: Springer, 2010.
Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.
Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2011.
Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.
Taylor, B. E. Power Mosfet design. Chichester, W. Sussex, England: Wiley, 1993.
Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.
Kang, Baowei. Chang xiao ying jing ti guan li lun ji chu. 8th ed. Beijing: Ke xue chu ban she, 1985.
Baliga, Jayant. Silicon RF power MOSFETs. Singapore: World Scientific, 2005.
Baliga, B. Jayant. Silicon RF power MOSFETS. Singapore: World Scientific, 2005.
Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.
Höhr, Timm. Quantum-mechanical modeling of transport parameters for MOS devices. Konstanz: Hartnung-Gorre, 2006.
Kano, Kanaan. Semiconductor devices. Upper Saddle River, N.J: Prentice Hall, 1998.
Schroder, Dieter K. Advanced MOS devices. Reading, Mass: Addison-Wesley Pub. Co., 1987.
Schroder, Dieter K. Advanced MOS devices. Reading, Mass: Addison-Wesley Pub. Co., 1990.
Warner, R. M. MOSFET theory and design. New York: Oxford University Press, 1999.
Maiti, C. K. Strained-Si heterostructure field effect devices. New York: Taylor & Francis, 2007.
Enz, Christian. Charge-based MOS transistor modelling: The EKV model for low-power and RF IC design. Chichester, UK: John Wiley & Sons, 2006.
Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.
Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.
Galup-Montoro, Carlos. MOSFET modeling for circuit analysis and design. Singapore: World Scientific, 2007.
Center, Lewis Research, ed. Analog synthesized fast-variable linear load. Brook Park, Ohio: Sverdrup Technology, Inc., Lewis Research Center Group, 1991.
Grant, Duncan A. Power MOSFETS: Theory and applications. New York: Wiley, 1989.
Center, Lewis Research, ed. Analog synthesized fast-variable linear load. Brook Park, Ohio: Sverdrup Technology, Inc., Lewis Research Center Group, 1991.
Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.
Miura-Mattausch, Mitiko. The physics and modeling of MOSFETS: Surface-potential model HiSIM. Singapore: World Scientific, 2008.
P, Severns Rudolf, and Armijos Jack 1949-, eds. MOSPOWER applications handbook. Santa Clara, Calif: Siliconix, 1985.
Wikström, Mats Olaf Tobias. MOS-controlled switches for high-voltage application. Konstanz: Hartung-Gorre, 2001.
Wilson, C. L. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
L, Blue J., ed. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
L, Wilson C. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, MD: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Hisham, Haddara, ed. Characterization methods for submicron MOSFETs. Boston: Kluwer Academic Publishers, 1995.
Baker, R. Jacob. CMOS: Circuit design, layout, and simulation. 3rd ed. Piscataway, NJ: IEEE Press, 2010.
Linder, Stefan. Power semiconductors. Lausanne, Switzerland: EPFL Press, 2006.
Baker, R. Jacob. CMOS circuit design, layout, and simulation. New Delhi: Prentice-Hall of India, 2004.
Foty, D. MOSFET modeling with SPICE: Principles and practice. Upper Saddle River, NJ: Prentice Hall PTR, 1997.
R, Fossum Eric, and Society of Photo-optical Instrumentation Engineers., eds. Infrared readout electronics II: 7-8 April 1994, Orlando, Florida. Bellingham, Wash., USA: SPIE, 1994.
Tsividis, Yannis P. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.
Chaudhry, Amit. Fundamentals of Nanoscaled Field Effect Transistors. New York, NY: Springer New York, 2013.
Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. Boston: WCB/McGraw-Hill, 1998.
Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. Boston: WCB/McGraw-Hill, 1999.
Tsividis, Yannis. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.