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Books on the topic 'Metal insulator transition'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 May 2024

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1

Gebhard, Florian. The Mott Metal-Insulator Transition. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/3-540-14858-2.

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2

Gebhard, Florian. The mott metal-insulator transition: Models and methods. New York: Springer, 1997.

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3

mer, Nils Blu. Mott-Hubbard metal-insulator transition and optical conductivity in high dimensions. Aachen: Shaker, 2003.

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4

Cheng, Minghao. Spectroscopy of the Temperature and Current Driven Metal-Insulator Transition in Ca₂RuO₄. [New York, N.Y.?]: [publisher not identified], 2020.

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5

F, Mott N. Metal-insulator transitions. 2nd ed. London: Taylor & Francis, 1990.

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6

International Conference on Heavy Doping and the Metal-Insulator Transition in Semiconductors (1984 Santa Cruz). Heavy doping and the metal-insulator transition in semiconductors: International conference, University of California at Santa Cruz, California, U.S.A., 30 July-3 August 1984. Edited by Landsberg P. T. 1922-. New York: Pergamon Press, 1985.

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7

Rao, C. N. R. 1934- and Mott, N. F. Sir, 1905-, eds. Metal-insulator transitions revisited. London, UK: Taylor & Francis, 1995.

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8

Fritzsche, Hellmut. Localization and Metal-Insulator Transitions. Boston, MA: Springer US, 1985.

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9

Fritzsche, Hellmut, and David Adler, eds. Localization and Metal-Insulator Transitions. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8.

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10

Hellmut, Fritzsche, Adler David 1935-1987, and Mott, N. F. Sir, 1905-, eds. Localization and metal-insulator transitions. New York: Plenum Press, 1985.

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11

1953-, Fujimori A., Tokura Y. 1954-, and Taniguchi International Symposium on the Theory of Condensed Matter (17th : 1994 : Kashikojima, Japan), eds. Spectroscopy of mott insulators and correlated metals: Proceedings of the 17th Taniguchi Symposium, Kashikojima, Japan, October 24-28, 1994. Berlin: Springer, 1995.

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12

Korea) International Conference on Low Temperature Physics (26th 2011 Pohang. Localisation 2011: Proceedings of the satellite conference of LT 26. Edited by Kettemann Stefan editor. New Jersey: World Scientific, 2013.

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13

Fastenrath, Ulrich. Mikroskopische Modelle für den Leiter-Isolator-Übergang. Aachen [Germany]: Verlag Shaker, 1992.

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14

1945-, Andō Tsuneya, Fukuyama H. 1942-, and University of Tokyo International Symposium on Anderson Localization (1987), eds. Anderson localization: Proceedings of the international symposium, Tokyo, Japan, August 16-18, 1987. Berlin: Springer-Verlag, 1988.

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15

Baerner, Klaus. Double exchange in Heusler alloys and related materials. Trivandrum, Kerala, India: Research Signpost, 2007.

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16

A, Benedict K., and Chalker J. T, eds. Localisation 1990: Proceedings of the International Conference on Localisation, held at Imperial College, London, 13-15 August 1990. Bristol: Institute of Physics, 1991.

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17

Strongly Correlated Electronic Materials. (1993 Los Alamos). Strongly correlated electronic materials: The Los Alamos symposium, 1993. Edited by Bedell K. S. Reading, Mass: Addison-Wesley, 1994.

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18

Scottish Universities' Summer School in Physics. (31st 1986 Saint Andrews, Scotland). Localisation and interaction in disordered metals and doped semiconductors: Proceedings of the thirty-first Scottish Universities Summer School in Physics, St. Andrews, August 1986. Edinburgh: The School, 1986.

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19

Kevin, Bedell, ed. Strongly correlated electronic materials: The Los Alamos symposium, 1993. Reading, Mass: Addison-Wesley Pub. Co., 1994.

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20

Lecture notes on electron correlation and magnetism. Singapore: World Scientific, 1999.

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21

International Euroconference on Magnetic Correlations, Metal-Insulator-Transitions, and Superconductivity in Novel Materials (1994 University of Würzburg, Germany). International Euroconference on Magnetic Correlations, Metal-Insulator-Transitions, and Superconductivity in Novel Materials, University of Würzburg, Würzburg, Germany, September 26-30 1994. New York: Plenum, 1995.

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22

Alkali-doped fullerides: Narrow-based Solids with Unusual Properties. Singapore: World Scientific Pub., 2004.

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23

Gebhard, Florian. The Mott Metal-Insulator Transition: Models And Methods. Springer, 2010.

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24

Edwards, P., and C. N. R. Rao. The Metal-Nonmetal Transition Revisited. CRC, 1995.

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25

Gebhard, F. The Mott Metal-insulator Transition: Models and Methods (Springer Tracts in Modern Physics). Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, 2000.

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26

Meintjes, Ernesta M. Impurity NMR study of heavily phosphorus-dopes silicon. 1998.

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27

Dlimi, Said, ed. Metal Insulator Transition in Two-Dimensional Systems 2D p-GaAs and 2D p-SiGe cases. AkiNik Publications, 2021. http://dx.doi.org/10.22271/ed.book.1128.

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28

Fritzche, Hellmut. Localization and Metal-Insulator Transitions. Springer, 2013.

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29

Mott, Nevill. Metal-Insulator Transitions. Taylor & Francis Group, 1990.

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30

Mott, N. F. Metal-Insulator Transitions. Taylor & Francis Group, 1990.

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31

Edwards, P. Metal-Insulator Transitions Revisited. Taylor & Francis Group, 2004.

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32

Edwards, P. P., and C. N. R. Rao. Metal-Insulator Transitions Revisited. Taylor & Francis Group, 1995.

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33

Localization and Metal-Insulator Transitions. Springer, 2011.

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34

Pustogow, Andrej, ed. New Spin on Metal-Insulator Transitions. MDPI, 2023. http://dx.doi.org/10.3390/books978-3-0365-7059-4.

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35

Fujimori, Atsushi, and Yoshinori Tokura. Spectroscopy of Mott Insulators and Correlated Metals: Proceedings of the 17th Taniguchi Symposium, Kashikojima, Japan, October 24 - 28, 1994 (Springer Series in Solid-State Sciences). Springer, 1995.

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36

Stafström, Sven, and Mikael Unge. Disorder-induced electron localization in molecular-based materials. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.25.

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This article examines disorder-induced electron localization in molecular-based materials, using DNA and pentacene molecular crystals as examples. In DNA, the disorder is intrinsic and strong, resulting in very short localization lengths. The pentacene crystal, on the other hand, is intrinsically homogeneous and the disorder is extrinsic and weak, which makes a metal–insulator transition (MIT) possible. After providing an overview of carbon-based materials for electronic applications, the article explains the methodology for calculating the localization properties of a DNA double strand and a pentacene molecular crystal, namely Hamiltonian, transfer matrix, and finite-size scaling. It also discusses the results, which show a substantial increase in the localization length of the electronic state with correlated disorder as compared to the case of uncorrelated disorder.

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37

Cao, Gang, and Lance DeLong. Physics of Spin-Orbit-Coupled Oxides. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.001.0001.

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Prior to 2010, most research on the physics and chemistry of transition metal oxides was dominated by compounds of the 3d-transition elements such as Cr, Mn, Fe, Co, Ni, and Cu. These materials exhibited novel, important phenomena that include giant magnetoresistance in manganites, as well as high-temperature superconductivity in doped La₂CuO₄ and related cuprates. The discovery in 1994 of an exotic superconducting state in Sr₂RuO₄ shifted some interest toward ruthenates. Moreover, the realization in 2008 that a novel variant of the classic Mott metal-insulator transition was at play in Sr₂IrO₄ provided the impetus for a burgeoning group of studies of the influence of strong spin-orbit interactions in “heavy” (4d- and 5d-) transition-element oxides. This book reviews recent experimental and theoretical evidence that the physical and structural properties of 4d- and 5d-oxides are decisively influenced by strong spin-orbit interactions that compete or collaborate with comparable Coulomb, magnetic exchange, and crystalline electric field interactions. The combined effect leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel couplings between the orbital/lattice and spin degrees of freedom, which lead to unusual types of magnetic order and other exotic phenomena, challenge current theoretical models. Of particular interest are recent investigations of iridates and ruthenates focusing on strong spin-orbit interactions that couple the lattice and spin degrees of freedom.

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38

Anto, T. Anderson Localization: Proceedings (Springer Proceedings in Physics). Springer, 1988.

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39

Superconductivity and Localization. World Scientific Publishing Company, 2000.

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40

Gallen, Niall A. Ion implantation waveguide formation in transition metal ion doped insulators. 1999.

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41

Gunnarsson, Olle. Alkali-Doped Fullerides: Narrow-Band Solids with Unusual Properties. World Scientific Publishing Company, 2004.

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42

Swendsen, Robert H. An Introduction to Statistical Mechanics and Thermodynamics. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780198853237.001.0001.

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This is a textbook on statistical mechanics and thermodynamics. It begins with the molecular nature of matter and the fact that we want to describe systems containing many (1020) particles. The first part of the book derives the entropy of the classical ideal gas using only classical statistical mechanics and Boltzmann’s analysis of multiple systems. The properties of this entropy are then expressed as postulates of thermodynamics in the second part of the book. From these postulates, the structure of thermodynamics is developed. Special features are systematic methods for deriving thermodynamic identities using Jacobians, the use of Legendre transforms as a basis for thermodynamic potentials, the introduction of Massieu functions to investigate negative temperatures, and an analysis of the consequences of the Nernst postulate. The third part of the book introduces the canonical and grand canonical ensembles, which are shown to facilitate calculations for many models. An explanation of irreversible phenomena that is consistent with time-reversal invariance in a closed system is presented. The fourth part of the book is devoted to quantum statistical mechanics, including black-body radiation, the harmonic solid, Bose–Einstein and Fermi–Dirac statistics, and an introduction to band theory, including metals, insulators, and semiconductors. The final chapter gives a brief introduction to the theory of phase transitions. Throughout the book, there is a strong emphasis on computational methods to make abstract concepts more concrete.

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