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Academic literature on the topic 'Metal-Insulator Transition devices'

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Published: 7 July 2024
Last updated: 7 July 2024

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Journal articles on the topic "Metal-Insulator Transition devices":

1

Lee, D., B. Chung, Y. Shi, G. Y. Kim, N. Campbell, F. Xue, K. Song, et al. "Isostructural metal-insulator transition in VO2." Science 362, no. 6418 (November 29, 2018): 1037–40. http://dx.doi.org/10.1126/science.aam9189.

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The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.
2

Li, Dasheng, Jonathan M. Goodwill, James A. Bain, and Marek Skowronski. "Scaling behavior of oxide-based electrothermal threshold switching devices." Nanoscale 9, no. 37 (2017): 14139–48. http://dx.doi.org/10.1039/c7nr03865h.

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Materials exhibiting insulator to metal transition (IMT) and transition metal oxides showing threshold switching behavior are considered as promising candidates for selector devices for crossbar non-volatile memory application.
3

Wang, Qi, Kai Liang Zhang, Fang Wang, Kai Song, and Zhi Xiang Hu. "Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices." Applied Mechanics and Materials 130-134 (October 2011): 1–4. http://dx.doi.org/10.4028/www.scientific.net/amm.130-134.1.

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A sandwich device structure of MIM (metal/insulator/metal) is designed and its metal-insulator transition induced by an external electric field is investigated. VOxfilms were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VOx/Cu/Ti/SiO2/Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with-0.4V/0.3V operation voltage (SET/RESET), while the devices of Pt/VOx/V/Cu/Ti/SiO2/Si, Pt/VOx/Al/Ti/SiO2/Si and Pt/VOx/Pt/Ti/SiO2/Si didn’t show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VOx/Cu/Ti/SiO2/Si device.
4

Polak, Paweł, Jan Jamroz, and Tomasz K. Pietrzak. "Observation of Metal–Insulator Transition (MIT) in Vanadium Oxides V2O3 and VO2 in XRD, DSC and DC Experiments." Crystals 13, no. 9 (August 23, 2023): 1299. http://dx.doi.org/10.3390/cryst13091299.

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Due to metal–insulator transitions occurring in those compounds, materials and devices based on vanadium (III) and (IV) oxides draw increasing scientific attention. In this paper, we observed the transitions in both oxides using contemporary laboratory equipment. Changes in the crystallographic structure were precisely investigated as a function of the temperature with a step of 2 °C. Thermal effects during transitions were observed using differential scanning calorimetry. The DC conductivity of the materials was measured quasi-continuously as a function of the temperature. All the experiments were consistent and showed considerable hysteresis of the metal–insulator transition in both vanadium oxides.
5

Cheng, Shaobo, Min-Han Lee, Richard Tran, Yin Shi, Xing Li, Henry Navarro, Coline Adda, et al. "Inherent stochasticity during insulator–metal transition in VO2." Proceedings of the National Academy of Sciences 118, no. 37 (September 7, 2021): e2105895118. http://dx.doi.org/10.1073/pnas.2105895118.

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Vanadium dioxide (VO2), which exhibits a near-room-temperature insulator–metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO2 at local areas in planar VO2/TiO2 device configuration under external biasing. After each resistive switching, different VO2 monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO2 as the key material of neuromorphic computing.
6

Hong, Woong-Ki, SeungNam Cha, Jung Inn Sohn, and Jong Min Kim. "Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2Structures." Journal of Nanomaterials 2015 (2015): 1–15. http://dx.doi.org/10.1155/2015/538954.

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The metal-insulator transition (MIT) in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2) has been extensively studied in the last decade because of a sharp, reversible change in its optical, electrical, and magnetic properties at approximately 341 K, which would be possible and promising to develop functional devices with advanced technology by utilizing MITs. However, taking the step towards successful commercialization requires the comprehensive understanding of MIT mechanisms, enabling us to manipulate the nature of transitions. In this regard, recently, quasi-one-dimensional (quasi-1D) VO2structures have been intensively investigated due to their attractive geometry and unique physical properties to observe new aspects of transitions compared with their bulk counterparts. Thus, in this review, we will address recent research progress in the development of various approaches for the modification of MITs in quasi-1D VO2structures. Furthermore, we will review recent studies on realizing novel functional devices based on quasi-1D VO2structures for a wide range of applications, such as a gas sensor, a flexible strain sensor, an electrical switch, a thermal memory, and a nonvolatile electrical memory with multiple resistance.
7

Wei, Na, Xiang Ding, Shifan Gao, Wenhao Wu, and Yi Zhao. "HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance." Electronics 11, no. 22 (November 20, 2022): 3820. http://dx.doi.org/10.3390/electronics11223820.

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A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfOx/Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared with metal-insulator-metal (MIM) RRAM devices. Under DC cycling, HfOx/Ge devices exhibit a 100× larger memory window compared to HfOx MIM devices, and a DC sweep of up to 20,000 cycles was achieved with the devices. The devices also realize low static power down to 1 nW as FPGA’s pull-up/pull-down resistors. Thus, HfOx/Ge devices act as a promising candidates for various applications such as FPGA or compute-in-memory, in which both a high ON/OFF ratio and decent endurance are required.
8

Huang, Tiantian, Rui Zhang, Lepeng Zhang, Peiran Xu, Yunkai Shao, Wanli Yang, Zhimin Chen, Xin Chen, and Ning Dai. "Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition." RSC Advances 12, no. 55 (2022): 35579–86. http://dx.doi.org/10.1039/d2ra06866d.

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Weidemann, Sebastian, Mark Kremer, Stefano Longhi, and Alexander Szameit. "Topological triple phase transition in non-Hermitian Floquet quasicrystals." Nature 601, no. 7893 (January 19, 2022): 354–59. http://dx.doi.org/10.1038/s41586-021-04253-0.

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AbstractPhase transitions connect different states of matter and are often concomitant with the spontaneous breaking of symmetries. An important category of phase transitions is mobility transitions, among which is the well known Anderson localization1, where increasing the randomness induces a metal–insulator transition. The introduction of topology in condensed-matter physics2–4 lead to the discovery of topological phase transitions and materials as topological insulators5. Phase transitions in the symmetry of non-Hermitian systems describe the transition to on-average conserved energy6 and new topological phases7–9. Bulk conductivity, topology and non-Hermitian symmetry breaking seemingly emerge from different physics and, thus, may appear as separable phenomena. However, in non-Hermitian quasicrystals, such transitions can be mutually interlinked by forming a triple phase transition10. Here we report the experimental observation of a triple phase transition, where changing a single parameter simultaneously gives rise to a localization (metal–insulator), a topological and parity–time symmetry-breaking (energy) phase transition. The physics is manifested in a temporally driven (Floquet) dissipative quasicrystal. We implement our ideas via photonic quantum walks in coupled optical fibre loops11. Our study highlights the intertwinement of topology, symmetry breaking and mobility phase transitions in non-Hermitian quasicrystalline synthetic matter. Our results may be applied in phase-change devices, in which the bulk and edge transport and the energy or particle exchange with the environment can be predicted and controlled.
10

Heo, Jinseong, Heejeong Jeong, Yeonchoo Cho, Jaeho Lee, Kiyoung Lee, Seunggeol Nam, Eun-Kyu Lee, et al. "Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition." Nano Letters 16, no. 11 (October 5, 2016): 6746–54. http://dx.doi.org/10.1021/acs.nanolett.6b02199.

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Journal articles

Dissertations / Theses on the topic "Metal-Insulator Transition devices":

1

Collins-McIntyre, Liam James. "Transition-metal doped Bi2Se3 and Bi2Te3 topological insulator thin films." Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:480ea55a-5cac-4bab-a992-a3201f10f4c5.

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Topological insulators (TIs) are recently predicted, and much studied, new quantum materials. These materials are characterised by their unique surface electronic properties; namely, behaving as band insulators within their bulk, but with spin-momentum locked surface or edge states at their interface. These surface/edge crossing states are protected by the underlying time-reversal symmetry (TRS) of the bulk band structure, leading to a robust topological surface state (TSS) that is resistant to scattering from impurities which do not break TRS. Their surface band dispersion has a characteristic crossing at time reversal invariant momenta (TRIM) called a Dirac cone. It has been predicted that the introduction of a TRS breaking effect, through ferromagnetic order for instance, will open a band-gap in this Dirac cone. It can be seen that magnetic fields are not time reversal invariant by considering a solenoid. If time is reversed, the current will also reverse in the solenoid and so the magnetic field will also be reversed. So it can be seen that magnetic fields transform as odd under time reversal, the same will be true of internal magnetisation. By manipulating this gapped surface state a wide range of new physical phenomena are predicted, or in some cases, already experimentally observed. Of particular interest is the recently observed quantum anomalous Hall effect (QAHE) as well as, e.g., topological magneto-electric effect, surface Majorana Fermions and image magnetic monopoles. Building on these novel physical effects, it is hoped to open new pathways and device applications within the emerging fields of spintronics and quantum computation. This thesis presents an investigation of the nature of magnetic doping of the chalcogenide TIs Bi2Se3 and Bi2Te3 using 3d transition-metal dopants (Mn and Cr). Samples were grown by molecular beam epitaxy (MBE), an ideal growth method for the creation of high-quality thin film TI samples with very low defect densities. The grown films were investigated using a range of complementary lab-based and synchrotron-based techniques to fully resolve their physical structure, as well as their magnetic and electronic properties. The ultimate aim being to form a ferromagnetic ground state in the insulating material, which may be expanded into device applications. Samples of bulk Mn-doped Bi2Te3 are presented and it is shown that a ferromagnetic ground state is formed below a measured TC of 9-13 K as determined by a range of experimental methodologies. These samples are found to have significant inhomogeneities within the crystal, a problem that is reduced in MBE-grown crystals. Mn-doped Bi2Se3 thin films were grown by MBE and their magnetic properties investigated by superconducting quantum interference device (SQUID) magnetometry and x-ray magnetic circular dichroism (XMCD). These reveal a saturation magnetisation of 5.1 μB/Mn and show the formation of short-range magnetic order at 2.5 K (from XMCD) with indication of a ferromagnetic ground state forming below 1.5 K. Thin films of Cr-doped Bi2Se3 were grown by MBE, driven by the recent observation of the QAHE in Cr-doped (Bi1−xSbx)2Te3. Investigation by SQUID shows a ferromagnetic ground state below 8.5 K with a saturation magnetisation of 2.1 μB/Cr. Polarised neutron reflectometry shows a uniform magnetisation profile with no indication of surface enhancement or of a magnetic dead layer. Further studies by extended x-ray absorption fine structure (EXAFS) and XMCD elucidate the electronic nature of the magnetic ground state of these materials. It is found that hybridisation between the Cr d and Se p orbitals leads to the Cr being divalent when doping on the Bi3+ site. This covalent character to the electronic structure runs counter to the previously held belief that divalent Cr would originate from Cr clusters within the van der Waals gap of this material. The work overall demonstrates the formation of a ferromagnetic ground state for both Cr and Mn doped material. The transition temperature, below which ferromagnetic order is achieved, is currently too low for usable device applications. However, these materials provide a promising test bed for new physics and prototype devices.
2

Clarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices." Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.

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In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five experimental studies aimed at either directly exploring the properties of the above three interaction phenomena or the development of novel device structures that exploit the strong particle-particle interactions found in p-GaAs for the study of many body phenomena. Firstly, we demonstrate a novel semiconductor-insulator-semiconductor field effect transistor (SISFET), designed specifically to induced 2D hole systems at a ????normal???? AlGaAs-on-GaAs heterojunction. The novel SISFETs feature in our studies of the metallic behavior in 2D systems in which we examine temperature corrections to ????xx(T) and ????xy(T) in short- and long-range disorder potentials. Next, we shift focus to bilayer hole systems and the many body quantum Hall states that form a nu = 1 in the presence of strong interlayer interactions. We explore the evolution of this quantum Hall state as the relative densities in the layers is imbalanced while the total density is kept constant. Finally, we demonstrate a novel p-type quantum point contact device that produce the most stable and robust current quantization in a p-type 1D systems to date, allowing us to observed for the first time the 0.7 structure in a p-type device.
3

Delacour, Corentin. "Architecture Design for Analog Oscillatory Neural Networks." Electronic Thesis or Diss., Université de Montpellier (2022-....), 2023. http://www.theses.fr/2023UMONS069.

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La transformation de nos sociétés par le digital génère des quantités importantes de données dont la croissance a atteint une vitesse exponentielle depuis les dernières années. En dépit du progrès technique en matière de calcul, les ordinateurs digitaux actuels suivent difficilement cette tendance et sont dépassés par l'ampleur de certains problèmes, notamment liés aux algorithmes d'intelligence artificielle et aux problèmes d'optimisation de grande échelle. La limitation principale est liée à l'architecture même des calculateurs digitaux, à savoir la séparation du processeur et de la mémoire qui induit un ralentissement par le transfert des données, aussi appelée le goulot d'étranglement de von Neumann. Afin de contourner cette limitation, d'autres méthodes de calcul furent proposées distribuant le processeur et la mémoire telles que les architectures neuromorphiques basées sur l'implémentation de réseaux de neurones artificiels inspirés du cerveau. En outre, repenser la manière digitale de calculer comme par exemple utiliser les lois physiques et analogiques a le potentiel de réduire l'impact énergétique de certains calculs tout en les accélérant. Cette thèse a pour objectif principal d'explorer une approche physique du calcul fondée sur des réseaux de neurones oscillants (ONN) analogiques à faible coût énergétique. En particulier, ce travail se concentre sur (1) les performances d'une architecture ONN basée sur des neurones oscillants à partir de dioxyde de vanadium et couplés par des résistances, (2) une nouvelle architecture d'ONN à signaux mixtes calculant dans le domaine analogique, et propageant l'information de manière digitale afin de faciliter la conception à grande échelle, et (3) comment les ONNs peuvent résoudre des problèmes d'optimisation combinatoire dont la complexité croît de manière exponentielle avec la taille du problème. Pour conclure, de potentielles applications et futurs axes de recherche sont discutés
Digitalization of society creates important quantities of data that have been increasing at an exponential rate during the past few years. Despite the tremendous technological progress, digital computers have trouble meeting the demand, especially for challenging tasks involving artificial intelligence or optimization problems. The fundamental reason comes from the architecture of digital computers which separates the processor and memory and slows down computations due to undesired data transfers, the so-called von Neumann bottleneck. To avoid unnecessary data movement, various computing paradigms have been proposed that merge processor and memory such as neuromorphic architectures that take inspiration from the brain and physically implement artificial neural networks. Furthermore, rethinking digital operations and using analog physical laws to compute has the potential to accelerate some tasks at a low energy cost.This dissertation aims to explore an energy-efficient physical computing approach based on analog oscillatory neural networks (ONN). In particular, this dissertation unveils (1) the performances of ONN based on vanadium dioxide oscillating neurons with resistive synapses, (2) a novel mixed-signal and scalable ONN architecture that computes in the analog domain and propagates the information digitally, and (3) how ONNs can tackle combinatorial optimization problems whose complexity scale exponentially with the problem size. The dissertation concludes with discussions of some promising future research directions
4

Le, Bourdais David. "Microcapteurs de pression à base de manganites épitaxiées." Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112021/document.

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Les oxydes sont des matériaux complexes possédant une physique riche et toujours au centre de nombreuses recherches. Parmi ces oxydes, les manganites ont retenu notre attention car ils présentent une transition métal-isolant abrupte en température, générant un très fort coefficient en température en conditions d’environnement standards. L’objectif de ce travail est de démontrer que ce fort coefficient peut être exploité pour l’amélioration des performances des jauges de pression de type Pirani qui subissent un certain essoufflement dans leur développement. La voie menant à l’aboutissement d’une telle jauge à base d’oxydes pose en revanche un certain nombre de limites technologiques à lever et auxquelles nous avons répondu. La première de ces limites concerne l’intégration des oxydes monocristallins sur silicium, que nous avons reproduite et étendue au cas des substrats de type SOI et GaAs. Nos procédés proposent de passer par deux techniques, l’épitaxie par jets moléculaire et l’ablation laser, pour assurer une croissance optimale de nos films sur ces substrats et d’assurer la reproductibilité de leur réponse en température, notamment la position de leur température de transition en accord avec l’état de l’art. L’épitaxie de ces oxydes génère un niveau de contrainte non négligeable qui n’a jamais été mesuré. En concevant divers dispositifs autosupportés, et en s’appuyant sur les considérations théoriques et des modélisations par éléments finis, nous avons pu quantifier la relaxation de cette contrainte importante et assurer près de 100% de reproductibilité des systèmes suspendus. Ces mêmes systèmes nous permettent de caractériser pour la première fois le facteur de jauge des manganites monocristallines par l’application d’une contrainte contrôlée par nanoindentation. Il est également démontré qu’ils constituent des jauges de pression Pirani à la sensibilité accrue de deux ordres de grandeur pour une consommation en puissance réduite. Des solutions permettant d’améliorer l’ensemble des aspects de ces jauges sont étudiées
Functional perovskite oxides are of great interest for fundamental and applied research thanks to the numerous physical properties and inherent mechanisms they display. With the maturation of thin film deposition techniques, research teams are able to reproduce oxide films and nanostructures of great crystalline quality with some of the most remarkable properties found in physics, a state leading now to upper-level thoughts like their ability to fulfill industrial needs. This thesis work is an answer to some of the problematics that arise when considering the oxide transition from the research to the industrial world, by focusing on their integration for micromechanical devices (MEMS) such as sensors. In order to ease the access to MEMS manufacturing, it is of importance to allow the deposition of thin oxide films on semiconductor substrates. A first study show that these access bridges can be crossed when using appropriate buffer layers such as SrTiO3 deposited on Silicon or gallium arsenide – produced in close collaboration with INL by Molecular Beam Epitaxy - and yttria-stabilized zirconia directly grown on silicon by pulsed laser deposition, which adapts the surface properties of the substrate to perovksite-based materials. Formation of thin epitaxial and monocristalline films of functional oxides is thus allowed on such buffer layers. As an example, characterization of two mixed-valence manganites La0.80Ba0.20MnO3 and La0.67Sr0.33MnO3 demonstrates that both materials are of excellent crystalline quality on these semiconducting substrates and that their physical characteristics match the one found on classical oxide substrates like SrTiO3. Stress evolution in thin films, which has a major effect in epitaxial materials, is then addressed to quantify its impact on oxide microstructure viability. This work gives an identification of the most significant factors favoring stress generation in the case of the films we produced. Then, based on the deformation measurement of free-standing cantilevers made of manganites on pseudo-substrates, and with the support of appropriate analytical models, a new state of equilibrium is established, giving new information about the evolution of static stress from deposition to MEMS device manufacturing. Solutions to manage their reproducibility is then studied. From another perspective, free-standing microstructures made of monocristaline manganites were used to display the effect of dynamical strain on their electrical resistivity (piezoresistivity) and their inherent structures.Finally, a specific example of the capabilities of reproducible free-standing microbridges made of manganites is presented through the conception of a pressure gauge based on Pirani effect. Indeed, it is shown that the abrupt resistivity change this material exhibits near their metal-to-insulating transition creates high temperature coefficients in standard application environments that can be taken as an advantage to improve the sensibility and power consumption of such gauges whose development had significantly slowed down over the past years. A set of improvements on their sensitivity range and their signal acquisition is also presented. Combined to a specific and innovative package, it is also demonstrated that Pirani gauge capabilities can be enhanced and that the complete devices fulfill embedded application requirements
5

Santos, Ana Filipa Alves Rodrigues dos. "Investigation of VO2 Metal-to-Insulator Transition for application in memory devices." Master's thesis, 2020. http://hdl.handle.net/10362/129483.

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Vanadium oxides have been extensively studied due to their multiple forms. In particular, VO2 presents a reversible and ultrafast metal-to-insulator transition (MIT) occurring at ~68ºC that changes the material from monoclinic to tetragonal rutile structure. An external input (thermal, chemical or electronic) can trigger this transition, changing it from a high resistance state to a low resistance state, meaning that it can be used as an electronic switch. In this project, the optimized conditions to produce VO2 thin films (~200 nm of thickness) were studied and films were deposited by e-beam evaporation and rf magnetron sputtering (with different O2 pressures), followed by a Rapid Thermal Annealing (RTA) treatment at different temperatures. The structural, chemical, electronic and morphological properties of VO2 thin films were characterized by means of X-Ray Diffraction (XRD), X-Ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscope (AFM). E-beam deposited films were not very reproducible due to contaminations of the tungsten crucible and it was difficult to evaporate the VO2 pellets. The films were amorphous after deposition and the annealing performed shown that VO2 monoclinic phase was achieved at 500ºC. The substrate used was Glass/ITO. As RTA temperature increased and O2 pressure decreased, the crystallization and roughness of the films increased. The optimized conditions for sputtering were attained with 3x10-5 mbar of O2 pressure and RTA temperature of 450ºC in a N2 environment with a base pressure of 250 mbar. MIM devices were fabricated with sputtering where Molibdenium (Mo) metal was on top of VO2, using shadow masks with circular contacts and using ITO films as the back contact. An in-situ heating characterization was performed in XRD and XPS to analyze the transition in terms of phase changes as well as chemical and electronic properties. Preliminary electrical characterization was performed to explore the MIT on optimized VO2 thin films.
Os óxidos de vanádio têm sido bastante estudados devido às suas múltiplas formas e fases. Em particular, o VO2 apresenta uma transição metal-isolante (MIT) reversível e ultrarrápida que ocorre a ~68ºC que altera o material de estrutura monoclínica para tetragonal rutile. Um estímulo externo (térmico, químico ou elétrico) pode provocar esta transição, alterando-a de um estado de alta resistência para baixa resistência, significando que pode ser usado como interruptor elétrico. Neste trabalho, foram estudadas as condições ótimas para produzir filmes finos de VO2 (~200 nm de espessura). Foram depositados por e-beam evaporation e rf magnetron sputtering (a diferentes pressões de O2), seguidos de um tratamento RTA a diferentes temperaturas. A composição estrutural dos filmes finos de VO2 foi caracterizada por XRD, XPS e AFM. Os filmes depositados por e-beam não são reproduzíveis devido a contaminações do cadinho de tungsténio e foi difícil evaporar os “pellets” de VO2. Os filmes eram amorfos depois da deposição e o recozimento realizado mostrou que a fase monoclínica de VO2 foi atingida com sucesso a 500ºC. O substrato utilizado foi Vidro/ITO. À medida que a temperatura aumentava e a pressão de O2 diminuía, a cristalização e rugosidade dos filmes aumentava. As condições ótimas por sputtering foi obtida para 3x10-5 mbar de pressão de O2 e temperatura de 450ºC num ambiente de N2 com uma pressão base de 250 mbar. Dispositivos MIM foram fabricados por sputtering onde Molibdénio (Mo) foi o metal depositado por cima do VO2, usando máscaras com contactos circulares e usando filmes de ITO como contacto de baixo. A caracterização in-situ com aquecimento foi realizada no XRD e XPS para se analisar a transição in termos de diferenças de fase assim como as propriedades químicas e elétricas. A caracterização elétrica preliminar foi realizada para explorar a MIT em filmes finos de VO2 otimizados.
6

Chang, Jiwon active 2013. "Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices." 2013. http://hdl.handle.net/2152/21742.

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Atomically two-dimensional (2-D) graphene, as well as the hexagonal boron nitride dielectric have been and are continuing to be widely investigated for the next generation nanoelectronic devices. More recently, other 2-D materials and electronic systems including the surface states of topological insulators (TIs) and monolayers of transition metal dichalcogenides (TMDs) have also attracted considerable interest. In this work I have focused on these latter two material systems on possible device applications. TIs are characterized by an insulating bulk band gap and metallic Dirac surface states which are spin-polarized. Here, the electronic structures of bulk and thin film TIs are studied using ab-initio density functional theory (DFT). Band inversion, an essential characteristic of TIs, is shown in the bulk band structures. Properties of TI surface bands in thin film such as the critical film thickness to induce a gap, the thickness dependent gap size, and the localization length of surface states are reported. Effects of crystalline dielectric materials on TI surface states are also addressed by ab-initio calculations. I discuss the sensitivity of Dirac point degeneracy and linear band dispersion of TI with respect to different dielectric surface terminations as well as different relative atom positions of the dielectric and TI. Additionally, this work presents research on exciton condensation in TI using a tight-binding model combined with self-consistent non-local Hartree-Fock mean-field theory. Possibility of exciton condensation in the TI Bi₂Se₃ thin film is assessed. Non-equilibrium Green's function (NEGF) simulations with the atomistic tight-binding (TB) Hamiltonian are carried out to explore the performance of metal-oxide-semiconductor field-effect-transistor (MOSFET) and tunnel field-effect-transistor (TFET) based on the Bi₂Se₃ TI thin film. How the high dielectric constant of Bi₂Se₃ affects the performance of MOSFET and TFET is presented. Bulk TMDs such as MoS₂, WS₂ and others are the van der Waals-bonded layered material, much like graphite, except monolayer (and Bulk) TMDs have a large band gap in-contrast to graphene (and graphite). Here, the performance of nanoscale monolayer MoS₂ n-channel MOSFETs are examined through NEGF simulations using an atomistic TB Hamiltonian. N- and p-channel MOSFETs of various monolayer TMDs are also compared by the same approach. I correlate the performance differences with the band structure differences. Finally, ab-initio calculations of adatom doping effects on the monolayer MoS₂ is shown. I discuss the most stable atomic configurations, the bonding type and the amount of charge transfer from adatom to the monolayer MoS₂.
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(7025126), Ahmedullah Aziz. "Device-Circuit Co-Design Employing Phase Transition Materials for Low Power Electronics." Thesis, 2019.

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Phase transition materials (PTM) have garnered immense interest in concurrent post-CMOS electronics, due to their unique properties such as - electrically driven abrupt resistance switching, hysteresis, and high selectivity. The phase transitions can be attributed to diverse material-specific phenomena, including- correlated electrons, filamentary ion diffusion, and dimerization. In this research, we explore the application space for these materials through extensive device-circuit co-design and propose new ideas harnessing their unique electrical properties. The abrupt transitions and high selectivity of PTMs enable steep (< 60 mV/decade) switching characteristics in Hyper-FET, a promising post-CMOS transistor. We explore device-circuit co-design methodology for Hyper-FET and identify the criterion for material down-selection. We evaluate the achievable voltage swing, energy-delay trade-off, and noise response for this novel device. In addition to the application in low power logic device, PTMs can actively facilitate non-volatile memory design. We propose a PTM augmented Spin Transfer Torque (STT) MRAM that utilizes selective phase transitions to boost the sense margin and stability of stored data, simultaneously. We show that such selective transitions can also be used to improve other MRAM designs with separate read/write paths, avoiding the possibility of read-write conflicts. Further, we analyze the application of PTMs as selectors in cross-point memories. We establish a general simulation framework for cross-point memory array with PTM based selector. We explore the biasing constraints, develop detailed design methodology, and deduce figures of merit for PTM selectors. We also develop a computationally efficient compact model to estimate the leakage through the sneak paths in a cross-point array. Subsequently, we present a new sense amplifier design utilizing PTM, which offers built-in tunable reference with low power and area demand. Finally, we show that the hysteretic characteristics of unipolar PTMs can be utilized to achieve highly efficient rectification. We validate the idea by demonstrating significant design improvements in a Cockcroft-Walton Multiplier, implemented with TS based rectifiers. We emphasize the need to explore other PTMs with high endurance, thermal stability, and faster switching to enable many more innovative applications in the future.

Book chapters on the topic "Metal-Insulator Transition devices":

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Verma, Divya, and Viswanath Balakrishnan. "Strain Engineering of Metal Insulator Transition in VO2." In Strain Engineering in Functional Materials and Devices, 1–24. AIP Publishing, 2023. http://dx.doi.org/10.1063/9780735425590_004.

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Dhara, Arup. "SYNTHESIS AND ELECTRICAL TRANSPORT PROPERTIES OF METAL OXIDE NANOMATERIALS." In Futuristic Trends in Chemical Material Sciences & Nano Technology Volume 3 Book 8, 164–68. Iterative International Publishers, Selfypage Developers Pvt Ltd, 2024. http://dx.doi.org/10.58532/v3becs8p4ch3.

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Metal oxides play a crucial task in several areas of physics, chemistry and material sciences. The elemental metals can form varieties of oxide compounds[1–4]. This variation can occur due to structural geometry, multi-valancy, doping effect etc. They can implement different geometrical structure with an electronic structure that can show metallic, semiconductor or insulator character. Metal oxides semiconductor draws a scientific attention due to their intrinsic worth in multipurpose fields applications such as catalysis ,energy conversion, magnetic memory devices ,batteries, solid oxide fuel cell optoelectronics devices, piezoelectric , solar cells , biomedical fields, gas sensors , luminescent LCDs and semiconductor devises etc[5–7]. Nanostructured materials are more competent due to their enhanced properties, compared to its bulk counterpart. In few decades, researchers around the globe widely studied the effect of transition metal (, Cr, Ni, Fe, Co, Mn etc.) doping on semiconductor oxides. In this way the host material becomes the dilute magnetic semiconductor (DMS) due to the substitution of cations by the transition metal ions.
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Wu, Xiaohan, Ruijing Ge, Deji Akinwande, and Jack C. Lee. "Memristors Based on 2D Monolayer Materials." In Memristor - An Emerging Device for Post-Moore’s Computing and Applications. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98331.

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2D materials have been widely used in various applications due to their remarkable and distinct electronic, optical, mechanical and thermal properties. Memristive effect has been found in several 2D systems. This chapter focuses on the memristors based on 2D materials, e. g. monolayer transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN), as the active layer in vertical MIM (metal–insulator–metal) configuration. Resistive switching behavior under normal DC and pulse waveforms, and current-sweep and constant stress testing methods have been investigated. Unlike the filament model in conventional bulk oxide-based memristors, a new switching mechanism has been proposed with the assistance of metal ion diffusion, featuring conductive-point random access memory (CPRAM) characteristics. The use of 2D material devices in applications such as flexible non-volatile memory (NVM) and emerging zero-power radio frequency (RF) switch will be discussed.
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Hangleiter, Andreas. "Optoelectronic devices based on low-dimensional nitride heterostructures." In Low-Dimensional Nitride Semiconductors, 311–40. Oxford University PressOxford, 2002. http://dx.doi.org/10.1093/oso/9780198509745.003.0013.

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Abstract Group-III-nitride-based optoelectronic devices have been the key driving force in the recent rapid development of nitride technology. Historically, the first light-emitting nitride device was a metal-insulator-semiconductor light-emitting diode (MIS-LED) developed by Jacques Pankove and coworkers [1] in the seventies, with dim pnjunction LEDs following in the late eighties [2]. Until 1992 the brightness of nitride LEDs reached only the millicandela range, still unable to surpass the SiC-based blue LEDs of those days. Only in 1993, were Nakamura and coworkers [3] able to report significant progress in GaN-based blue LED brightness, reaching the one candela level in 1994 [4]. While these first bright GaN-LEDs were still based on donor-acceptor transitions in thick GaN layers, super-bright violet, blue, and green LEDs utilizing the reduced dimensionality in GainN/GaN quantum wells were reported only shortly thereafter [5, 6].

Conference papers on the topic "Metal-Insulator Transition devices":

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Darwish, Mahmoud, and László Pohl. "SPICE Modeling of Insulator-Metal Transition Devices with Hysteresis." In 2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE, 2023. http://dx.doi.org/10.1109/therminic60375.2023.10325868.

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Chandra, Sayan, Daniel Franklin, Jared Cozart, Alireza Safaei, and Debashis Chanda. "Metal-insulator transition-induced adaptive multispectral infrared camouflage (Conference Presentation)." In Oxide-based Materials and Devices X, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2019. http://dx.doi.org/10.1117/12.2508646.

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Haglund, Richard F., and Sharon M. Weiss. "Exploiting the VO2 metal-insulator transition in nanoscale optical devices." In Photonic and Phononic Properties of Engineered Nanostructures XI, edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. SPIE, 2021. http://dx.doi.org/10.1117/12.2589958.

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Ghosh, Ram Krishna, and Suman Datta. "Orbitronics — Harnessing metal insulator phase transition in 1T-MoSe2." In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2016. http://dx.doi.org/10.1109/sispad.2016.7605156.

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Aldrigo, Martino, Mircea Dragoman, and Diego Masotti. "Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices." In 2018 International Semiconductor Conference (CAS). IEEE, 2018. http://dx.doi.org/10.1109/smicnd.2018.8539834.

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Choi, Sungyoul, Bong-Jun Kim, Yong Wook Lee, Sun Jin Yun, and Hyun-Tak Kim. "Synthesis of VO2 Nanowire and Observation of the Metal-Insulator Transition." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-13-4.

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Lim, Jung Wook, Sun Jin Yun, Yong Wook Lee, Bong Joon Kim, and Hyun Tak Kim. "Abrupt metal insulator transition of TiO2 and AlxTi1-xOy thin films." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-9-13.

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Lin, J., Annadi, S. Sonde, C. Chen, L. Stan, K. V. L. V. Achari, S. Ramanathan, and S. Guha. "Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices." In 2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016. http://dx.doi.org/10.1109/iedm.2016.7838541.

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Nakajima, Makoto, Naoko Takubo, Zenji Hiroi, Yutaka Ueda, and Tohru Suemoto. "Photo-induced insulator-metal phase transition observed by the terahertz pump-probe spectroscopy." In SPIE OPTO: Integrated Optoelectronic Devices, edited by Kong-Thon Tsen, Jin-Joo Song, Markus Betz, and Abdulhakem Y. Elezzabi. SPIE, 2009. http://dx.doi.org/10.1117/12.810003.

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Xiao, D., K. W. Kim, J. M. Zavada, and G. Lazzi. "Realization of tunable photonic crystals based on the metal insulator transition of VO 2." In Integrated Optoelectronic Devices 2006, edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. SPIE, 2006. http://dx.doi.org/10.1117/12.643920.

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