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Journal articles on the topic 'Metal-graphene Junction'

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Author: Grafiati
Published: 6 September 2023

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1

Konig, Matthias, Gunther Ruhl, Amit Gahoi, Sebastian Wittmann, Tobias Preis, Joerg-Martin Batke, Ioan Costina, and Max C. Lemme. "Accurate Graphene-Metal Junction Characterization." IEEE Journal of the Electron Devices Society 7 (2019): 219–26. http://dx.doi.org/10.1109/jeds.2019.2891516.

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2

Shao, Rui Qiang. "Graphene-Silicon Schottky Junction Fabricating by Laser Reduced Graphene Oxides." Advanced Materials Research 709 (June 2013): 139–42. http://dx.doi.org/10.4028/www.scientific.net/amr.709.139.

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Reported here is a new method of fabricating the graphene/silicon schottky junction. Using a femtosecond laser, graphene oxides are reduced to graphene and behave a metal. The junction of reduced GO and Si shows rectifying behavior indicating that the junction is schottky junction. Take advantage of the laser fabricating method, one can get reduced GO at any position on the substrate. Xps spectra shows that the reduced GO has only 12% oxygen content, and it is truly have a good conductivity similar to metal. This method opens a new effective way to graphene-based micro nano electronics.
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3

Indykiewicz, K., C. Bray, C. Consejo, F. Teppe, S. Danilov, S. D. Ganichev, and A. Yurgens. "Current-induced enhancement of photo-response in graphene THz radiation detectors." AIP Advances 12, no. 11 (November 1, 2022): 115009. http://dx.doi.org/10.1063/5.0117818.

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Thermoelectric readout in a graphene terahertz (THz) radiation detector requires a p- n junction across the graphene channel. Even without an intentional p- n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to the metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification of the ac signal. Because of the Peltier effect, a small dc current results in additional heating in one and cooling in another p- n junction, thereby breaking the symmetry. The p- n junctions then no longer cancel, resulting in a greatly enhanced rectified signal. This allows simplifying the design and controlling the sensitivity of THz radiation detectors.
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4

Hong, Seokmin, Youngki Yoon, and Jing Guo. "Metal-semiconductor junction of graphene nanoribbons." Applied Physics Letters 92, no. 8 (February 25, 2008): 083107. http://dx.doi.org/10.1063/1.2885095.

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5

Huang, Ko-Fan, Önder Gül, Takashi Taniguchi, Kenji Watanabe, and Philip Kim. "Andreev reflection between aluminum and graphene across van der Waals barriers." Low Temperature Physics 49, no. 6 (June 1, 2023): 662–69. http://dx.doi.org/10.1063/10.0019423.

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We present planar aluminum superconductor–graphene junctions whose hybrid interface is engineered for couplings ranging from tunneling to the strongly coupled regime by employing an atomically thin van der Waals tunneling barrier. Without the vdW barrier, we find Al makes strongly coupled contacts with the fully proximities graphene channel underneath. Using a large band gap hexagonal boron nitride (hBN) barrier, we find the junctions always remain in the weak coupling regime, exhibiting tunneling characteristics. Using monolayer semi-conducting transition metal dichalcogenides (TMDs) such as MoS2, we realize intermediate coupling with enhanced junction conductance due to the Andreev process. In this intermediate regime, we find that junction resistance changes in discrete steps when sweeping a perpendicular magnetic field. The period of the resistance steps in the magnetic field is inversely proportional to the junction area, suggesting the physical origin of our observations is due to magnetic-field-induced vortex formation in the planar junction.
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6

He, Chunhui, Qian Zhang, Shuhui Tao, Cezhou Zhao, Chun Zhao, Weitao Su, Yannick J. Dappe, Richard J. Nichols, and Li Yang. "Carbon-contacted single molecule electrical junctions." Physical Chemistry Chemical Physics 20, no. 38 (2018): 24553–60. http://dx.doi.org/10.1039/c8cp02877j.

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A fully metal-free molecular junction by using carbon fiber as the top electrode, and graphene as the bottom electrode was demonstrated for single molecular junctions, which is retaining long-lived charge excited states and potential for charge storage and manipulation.
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7

Shen, Caihua, Juan Liu, N. Jiao, C. X. Zhang, Huaping Xiao, R. Z. Wang, and L. Z. Sun. "Transport properties of graphene/metal planar junction." Physics Letters A 378, no. 18-19 (March 2014): 1321–25. http://dx.doi.org/10.1016/j.physleta.2014.03.008.

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8

Kumar, Ravinder, and Derick Engles. "Modeling the Charge Transport in Graphene Nano Ribbon Interfaces for Nano Scale Electronic Devices." Journal of Multiscale Modelling 06, no. 01 (March 2015): 1450003. http://dx.doi.org/10.1142/s1756973714500036.

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In this research work we have modeled, simulated and compared the electronic charge transport for Metal-Semiconductor-Metal interfaces of Graphene Nano Ribbons (GNR) with different geometries using First-Principle calculations and Non-Equilibrium Green's Function (NEGF) method. We modeled junctions of Armchair GNR strip sandwiched between two Zigzag strips with (Z-A-Z) and Zigzag GNR strip sandwiched between two Armchair strips with (A-Z-A) using semi-empirical Extended Huckle Theory (EHT) within the framework of Non-Equilibrium Green Function (NEGF). I-V characteristics of the interfaces were visualized for various transport parameters. The distinct changes in conductance and I-V curves reported as the Width across layers, Channel length (Central part) was varied at different bias voltages from -1V to 1 V with steps of 0.25 V. From the simulated results we observed that the conductance through A-Z-A graphene junction is in the range of 10-13 Siemens whereas the conductance through Z-A-Z graphene junction is in the range of 10-5 Siemens. These suggested conductance controlled mechanisms for the charge transport in the graphene interfaces with different geometries is important for the design of graphene based nano scale electronic devices like Graphene FETs, Sensors.
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9

Jung, Jaedong, Honghwi Park, Heungsup Won, Muhan Choi, Chang-Ju Lee, and Hongsik Park. "Effect of Graphene Doping Level near the Metal Contact Region on Electrical and Photoresponse Characteristics of Graphene Photodetector." Sensors 20, no. 17 (August 19, 2020): 4661. http://dx.doi.org/10.3390/s20174661.

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Graphene-metal contact is crucial to fabricate high-performance graphene photodetectors since the external quantum efficiency (EQE) of the photodetector depends on the contact properties, and the influence of the contact properties is particularly dominant in short channel devices for high-speed applications. Moreover, junction properties between the channel graphene and graphene near the contact are also important to analyze the photoresponse because the built-in electric field in the junction determines the EQE of the photodetector. In this study, we investigated a relation between the photoresponse and the built-in electric field induced from the doping level difference in the junction between the channel graphene and graphene near the contact. The photoresponse could be enhanced with a high junction barrier height that is tuned by the doping level difference. In addition, we observed that the improved electrical characteristics of channel graphene do not guarantee the enhancement of the photoresponse characteristics of graphene photodetectors.
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10

Tsai, Yu-Yang, Chun-Yu Kuo, Bo-Chang Li, Po-Wen Chiu, and Klaus Y. J. Hsu. "A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor." Micromachines 11, no. 6 (June 17, 2020): 596. http://dx.doi.org/10.3390/mi11060596.

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In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present work reports the observation of the electrical and optoelectronic characteristics of a graphene/polycrystalline silicon junction and explores one possible usage of the junction. The current–voltage curve of the junction was measured to show the typical exponential behavior that can be seen in a forward biased diode, and the photovoltage of the junction showed a logarithmic dependence on light intensity. A new phototransistor named the “photodiode–oxide–semiconductor field effect transistor (PDOSFET)” was further proposed and verified in this work. In the PDOSFET, a graphene/polycrystalline silicon photodiode was directly merged on top of the gate oxide of a conventional metal–oxide–semiconductor field effect transistor (MOSFET). The magnitude of the channel current of this phototransistor showed a logarithmic dependence on the illumination level. It is shown in this work that the PDOSFET facilitates a better pixel design in a complementary metal–oxide–semiconductor (CMOS) image sensor, especially beneficial for high dynamic range (HDR) image detection.
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11

Kou, Rong, Yuyan Shao, Donghai Mei, Zimin Nie, Donghai Wang, Chongmin Wang, Vilayanur V. Viswanathan, et al. "Stabilization of Electrocatalytic Metal Nanoparticles at Metal−Metal Oxide−Graphene Triple Junction Points." Journal of the American Chemical Society 133, no. 8 (March 2, 2011): 2541–47. http://dx.doi.org/10.1021/ja107719u.

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12

Xia, Fengnian, Vasili Perebeinos, Yu-ming Lin, Yanqing Wu, and Phaedon Avouris. "The origins and limits of metal–graphene junction resistance." Nature Nanotechnology 6, no. 3 (February 6, 2011): 179–84. http://dx.doi.org/10.1038/nnano.2011.6.

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13

Zhao, Xiuming, and Maodu Chen. "Charge transfer mechanism of SERS for metal–molecule–metal junction supported by graphene and boron-doped graphene." RSC Adv. 4, no. 108 (November 18, 2014): 63596–602. http://dx.doi.org/10.1039/c4ra10141c.

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14

Ahmadi, Ramin, and Mohammad Taghi Ahmadi. "Contact Effect On Twisted Graphene Based Schottky Transistor." ECS Journal of Solid State Science and Technology 11, no. 3 (March 1, 2022): 031005. http://dx.doi.org/10.1149/2162-8777/ac5eb3.

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Owing to the exceptional electrical properties of different one dimensional (1D) classifications of graphene structure such as graphene nanoribbon (GNR) and twisted graphene (TWG) led to a revolution in nanoelectronic researche and applications. Thus, these materials have been extensively explored in nanoelectronics science and materials. This paper is focused on GNR and TWG junction as metal-semiconductor-metal (MSM) in the form of a transistor. The wave vectors of TWG and GNR based on the geometrical effects are discussed. By considering 1D potential barrier at the junction of TWG as a semiconducting region and GNR as a metallic region, the transmission probability is calculated. Then, the I–V characteristics of GNR-TWG Schottky transistor based on quantum tunneling effect arepresented and discussed, as well. The performance of GNR-TWG Schottky transistor under variation of gate-source voltage, channel length, number of twists, width of GNR, and temperature are investigated. It is concluded that increment in number of twists and width of GNR lead to increasing the drain current and threshold voltage. Finally, comparison study with graphene nanoscroll (GNS) Schottky transistor, trilayer graphene nanoribbon (TGNR) Schottky transistor, and reported experimental data are performed and results represent that GNR-TWG Schottky transistor has larger drain current than these works.
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15

Ahmadi, Ramin, Mohammad Taghi Ahmadi, Seyed Saeid Rahimian Koloor, and Michal Petrů. "Monolayer Twisted Graphene-Based Schottky Transistor." Materials 14, no. 15 (July 23, 2021): 4109. http://dx.doi.org/10.3390/ma14154109.

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The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.
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16

CUI, LILING, BINGCHU YANG, XINMEI LI, JUN HE, and MENGQIU LONG. "ELECTRONIC TRANSPORT PROPERTIES OF TRANSITION METAL (Cu, Fe) PHTHALOCYANINES CONNECTING TO V-SHAPED ZIGZAG GRAPHENE NANORIBBONS." International Journal of Modern Physics B 28, no. 08 (February 24, 2014): 1450019. http://dx.doi.org/10.1142/s0217979214500192.

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Using nonequlilibrium Green's functions in combination with the density-functional theory, we investigate the spin transport properties of molecular junction based on metal ( Cu , Fe ) phthalocyanines between V-shaped zigzag-edged graphene nanorribons. The results show that the electronic transport properties mainly depend on the center transition metal. The negative differential resistance behaviors and spin splitting phenomenon can be observed.
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17

Mendoza, Cesar D., and F. L. Freire. "Single-Layer Graphene/Germanium Interface Representing a Schottky Junction Studied by Photoelectron Spectroscopy." Nanomaterials 13, no. 15 (July 26, 2023): 2166. http://dx.doi.org/10.3390/nano13152166.

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We investigated the interfacial electronic structure of the bidimensional interface of single-layer graphene on a germanium substrate. The procedure followed a well-established approach using ultraviolet (UPS) and X-ray (XPS) photoelectron spectroscopy. The direct synthesis of the single-layer graphene on the surface of (110) undoped Ge substrates was conducted via chemical vapor deposition (CVD). The main graphitic properties of the systems were identified, and it was shown that the Ge substrate affected the electronic structure of the single-layer graphene, indicating the electronic coupling between the graphene and the Ge substrate. Furthermore, the relevant features associated with the Schottky contact’s nature, the energy level’s alignments, and the energy barrier’s heights for electron and hole injection were obtained in this work. The results are useful, given the possible integration of single-layer graphene on a Ge substrate with the complementary metal-oxide-semiconductor (CMOS) technology.
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18

Lee, Jun-Ho, Inchul Choi, Nae Bong Jeong, Minjeong Kim, Jaeho Yu, Sung Ho Jhang, and Hyun-Jong Chung. "Simulation of Figures of Merit for Barristor Based on Graphene/Insulator Junction." Nanomaterials 12, no. 17 (August 31, 2022): 3029. http://dx.doi.org/10.3390/nano12173029.

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We investigated the tunneling of graphene/insulator/metal heterojunctions by revising the Tsu–Esaki model of Fowler–Nordheim tunneling and direct tunneling current. Notably, the revised equations for both tunneling currents are proportional to V3, which originates from the linear dispersion of graphene. We developed a simulation tool by adopting revised tunneling equations using MATLAB. Thereafter, we optimized the device performance of the field-emission barristor by engineering the barrier height and thickness to improve the delay time, cut-off frequency, and power-delay product.
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19

Kai, Shuangshuang, Baojuan Xi, Xiaolei Liu, Lin Ju, Peng Wang, Zhenyu Feng, Xiaojian Ma, and Shenglin Xiong. "An innovative Au-CdS/ZnS-RGO architecture for efficient photocatalytic hydrogen evolution." Journal of Materials Chemistry A 6, no. 7 (2018): 2895–99. http://dx.doi.org/10.1039/c7ta10958j.

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An innovative CdS/ZnS-RGO hybrid is synthesizedviaan one-pot hydrothermal method. The further introduction of Au nanoparticles enables the composite with the merits of heterostructured semiconductor/semiconductor junction benefiting the hole transfer, as well as graphene and noble metal favorable for electron transportation.
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20

Gutiérrez, Diego, Jesús Alejandro de Sousa, Marta Mas-Torrent, and Núria Crivillers. "Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction." ACS Applied Electronic Materials 2, no. 10 (September 14, 2020): 3093–99. http://dx.doi.org/10.1021/acsaelm.0c00296.

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21

Rocha Robledo, Ana K., Mario Flores Salazar, Bárbara A. Muñiz Martínez, Ángel A. Torres-Rosales, Héctor F. Lara-Alfaro, Osvaldo Del Pozo-Zamudio, Edgar A. Cerda-Méndez, Sergio Jiménez-Sandoval, and Andres De Luna Bugallo. "Interlayer charge transfer in supported and suspended MoS2/Graphene/MoS2 vertical heterostructures." PLOS ONE 18, no. 7 (July 25, 2023): e0283834. http://dx.doi.org/10.1371/journal.pone.0283834.

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In this letter, we report on the optical and structural properties of supported and suspended MoS2/Graphene/MoS2 vertical heterostructures using Raman and photoluminescence (PL) spectroscopies. Vertical heterostructures (VH) are formed by multiple wet transfers on micro-sized holes in SiO2/Si substrates, resulting in VH with different configurations. The strong interlayer coupling is confirmed by Raman spectroscopy. Additionally, we observe an enhancement of the PL emission in the three-layer VH (either support or suspended) compared with bare MoS2 or MoS2/Graphene. This suggests the formation of a spatial type-II band alignment assisted by the graphene layer and thus, the operation of the VH as a n++/metal/n junction.
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22

Zhao, Yi, Deyin Zhao, Zhenzhen Ma, Gong Li, Dan Zhao, and Xin Li. "Ion Sensitive GO-Si Based Metal-Semiconductor Junction Resistor Gas Sensor." Coatings 11, no. 11 (October 28, 2021): 1310. http://dx.doi.org/10.3390/coatings11111310.

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Gas sensor based on the Ultraviolet and Ozone (UVO) treated Chemical Vapor Deposition (CVD) Graphene Oxide (GO) and the Ion Sensitive GO-Si based metal-semiconductor junction resistor was designed and realized. Under different gate voltages, the response characteristics of the sensor to ammonia concentration, as well as the selectivity and stability of the sensor were studied. The test results show that the comprehensive performance of the gas sensor is the best when the UVO processing time is 1 min and the applied gate voltage is −9 V. The proposed Ion Sensitive GO-Si based metal-semiconductor junction resistor Gas Sensor can detect 250 ppb ammonia with a sensitivity of 4%. The detection limit of the sensor is 50 ppb. Using acetone and ethanol as contrast gases, the sensor shows better selectivity for ammonia. The sensitivity retention rate of the sensor after 10 days is higher than 70%, which indicates that the sensor has a good retention performance.
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23

Li, Changli, Yequan Xiao, Li Zhang, Yanbo Li, Jean-Jacques Delaunay, and Hongwei Zhu. "Efficient photoelectrochemical water oxidation enabled by an amorphous metal oxide-catalyzed graphene/silicon heterojunction photoanode." Sustainable Energy & Fuels 2, no. 3 (2018): 663–72. http://dx.doi.org/10.1039/c7se00504k.

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In conjunction with a TiO2 protective layer and FeNiCoOx electrocatalyst, a graphene/Si heterojunction photoanode is demonstrated as a new type of Si-based buried junction with high photovoltage for solar water oxidation.
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24

Teraoka, Masahiro, Yuzuki Ono, and Hojun Im. "Capacitance characterization of graphene/n-Si Schottky junction solar cell with MOS capacitor." Materials Research Express 10, no. 8 (August 1, 2023): 085602. http://dx.doi.org/10.1088/2053-1591/acf09c.

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Abstract We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with thermal annealing treatments (w-a) and one without (wo-a). It was found that the wo-a GSSC exhibits a two-step feature in the phase versus forward bias voltage relationship, which may be attributed to the presence of polymethyl methacrylate residues. By considering the capacitance of the MOS capacitor (Cmos) and its standard deviation, we successfully obtained the capacitance of the Schottky junction (CSch), and evaluated meaningful built-in potentials (Schottky barrier heights) which are 0.51 V (0.78 eV) and 0.47 V (0.75 eV) for the w-a and wo-a GSSCs, respectively, by the Mott–Schottky analysis. We also briefly discuss the relationship between CSch and the Nyquist and Bode plots, finding that the RC time constant decreases due to the subtraction of Cmos.
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25

Rahmani, Meisam, Razali Ismail, Mohammad Taghi Ahmadi, Mohammad Javad Kiani, Mehdi Saeidmanesh, F. A. Hediyeh Karimi, Elnaz Akbari, and Komeil Rahmani. "The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance." Journal of Nanomaterials 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/636239.

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Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.
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26

Xu, Dikai, Xuegong Yu, Dace Gao, Cheng Li, Mengyao Zhong, Haiyan Zhu, Shuai Yuan, Zhan Lin, and Deren Yang. "Self-generation of a quasi p–n junction for high efficiency chemical-doping-free graphene/silicon solar cells using a transition metal oxide interlayer." Journal of Materials Chemistry A 4, no. 27 (2016): 10558–65. http://dx.doi.org/10.1039/c6ta02868c.

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27

Ahmad, H., and T. M. K. Thandavan. "High photoresponsivity and external quantum efficiency of ultraviolet photodetection by mechanically exfoliated planar multi-layered graphene oxide sheet prepared using modified Hummer's method and spin coating technique." Materials Express 10, no. 7 (July 1, 2020): 998–1009. http://dx.doi.org/10.1166/mex.2020.1717.

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Electron–hole (e–h) pair generation and conversion into photocurrents by two-dimensional (2D) nanoparticle based metal semiconductor metal (MSM) structured photodetector is crucial for the development self-powered and high performance photodetectors. In this regard, graphene oxide (GO) is a highly suitable photoconducting material alongside graphene and reduced graphene oxide (rGO). A modified Hummer's method is applied to obtain the GO supernatant which undergoes morphological, structural and vibrational characterizations. The D and G bands observed at 1347 and 1592 cm–1 from the spectral analysis are due to the A1g symmetry sp3 carbon (C) and E2g phonons by sp2 C respectively, confirming the formation of GO. Electron beam evaporation is carried out to fabricate the silver (Ag) source and drain electrode fringes with 300 nm separation for current– voltage characterization. Non-linear and non-rectifying behavior is observed on the MSM structured multilayer GO film. The ideality factor and barrier height, calculated from the thermionic emission model at the Schottky junction of source is found to be lower than that of the drain. The mechanically exfoliated GO onto the Ag electrodes enables a high photoresponsivity and external quantum efficiency (EQE) about 4.12 AW–1 and 1346% to be attained. This shows that GO can behave as either a p- or n-type semiconducting materials.
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Lai, Qingxue, Qingwen Gao, Qi Su, Yanyu Liang, Yuxi Wang, and Zhi Yang. "Bottom-up synthesis of high-performance nitrogen-enriched transition metal/graphene oxygen reduction electrocatalysts both in alkaline and acidic solution." Nanoscale 7, no. 35 (2015): 14707–14. http://dx.doi.org/10.1039/c5nr02984h.

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29

Zhou, Huawei, Junxue Guo, Can Wang, Xuejing Liu, Shaozhen Shi, Jiazhen Wei, Xipeng Pu, et al. "2D Schottky Junction between Graphene Oxide and Transition‐Metal Dichalcogenides: Photoresponsive Properties and Electrocatalytic Performance." Advanced Materials Interfaces 6, no. 6 (January 13, 2019): 1801657. http://dx.doi.org/10.1002/admi.201801657.

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30

Davydov, S. Yu, and O. V. Posrednik. "Model of a “Two-Dimensional Metal–Graphene-Like Compound” Junction: Consideration for Interaction between the Components." Semiconductors 55, no. 7 (July 2021): 595–600. http://dx.doi.org/10.1134/s1063782621070071.

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31

Yoon, Hoon Hahn, Wonho Song, Sungchul Jung, Junhyung Kim, Kyuhyung Mo, Gahyun Choi, Hu Young Jeong, Jong Hoon Lee, and Kibog Park. "Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer." ACS Applied Materials & Interfaces 11, no. 50 (November 22, 2019): 47182–89. http://dx.doi.org/10.1021/acsami.9b12074.

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32

Zhang, Zengxing, Yunxian Guo, Xiaojuan Wang, Dong Li, Fengli Wang, and Sishen Xie. "Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO2for Metal-Free Schottky Junction Photodetectors." Advanced Functional Materials 24, no. 6 (September 1, 2013): 835–40. http://dx.doi.org/10.1002/adfm.201301924.

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33

Wang, Haotian. "Transition-Metal Single Atom Catalysts for Highly Efficient Artificial Photosynthesis." ECS Meeting Abstracts MA2018-01, no. 31 (April 13, 2018): 1919. http://dx.doi.org/10.1149/ma2018-01/31/1919.

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Utilizing solar energy to fix CO2 with water into chemical fuels and oxygen, a mimic process of photosynthesis in nature, is becoming increasingly important but still challenged by low selectivity and activity, especially in CO2 electrocatalytic reduction. Here, we report transition-metal atoms coordinated in a graphene shell as active centers for aqueous CO2 reduction to CO with high Faradaic efficiencies over 90% under significant currents up to ∼60 mA/mg 1 or a CO evolution rate of 3.81 mmol/h.2 We employed three-dimensional atom probe tomography to directly identify the single Ni atomic sites in graphene vacancies. Theoretical simulations suggest that compared with metallic Ni, the Ni atomic sites present different electronic structures that facilitate CO2-to-CO conversion and suppress the competing hydrogen evolution reaction dramatically. Coupled with Li+-tuned Co3O4 oxygen evolution catalyst and powered by a triple-junction solar cell, our artificial photosynthesis system achieves a peak solar-to-CO efficiency of 12.7% by using earth-abundant transition-metal electrocatalysts in a pH-equal system. References (1) Jiang, K.; Siahrostami, S.; Akey, A.J.; Li, Y.; Lu, Z.; Lattimer, J; Hu, Y.; Stokes, C.; Gangishetty, M.; Chen, G.; Zhou, Y.; Hill, W.; Cai, W.B.; Bell, D.C.; Chan, K.; Nørskov, J.K.; Cui, Y.; Wang, H. Chem 2017 https://doi.org/10.1016/j.chempr.2017.09.014. (2) Jiang, K.; Siahrostami, S.; Zheng, T.; Hu, Y.; Hwang, S.; Stavitski, E.; Peng, Y; Dynes, J.; Gangishetty, M.; Su, D.; Attenkofer, K.; Wang, H. submitted.
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34

Xiang, Yiqiu, Ling Xin, Jiwei Hu, Caifang Li, Jimei Qi, Yu Hou, and Xionghui Wei. "Advances in the Applications of Graphene-Based Nanocomposites in Clean Energy Materials." Crystals 11, no. 1 (January 7, 2021): 47. http://dx.doi.org/10.3390/cryst11010047.

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Extensive use of fossil fuels can lead to energy depletion and serious environmental pollution. Therefore, it is necessary to solve these problems by developing clean energy. Graphene materials own the advantages of high electrocatalytic activity, high conductivity, excellent mechanical strength, strong flexibility, large specific surface area and light weight, thus giving the potential to store electric charge, ions or hydrogen. Graphene-based nanocomposites have become new research hotspots in the field of energy storage and conversion, such as in fuel cells, lithium-ion batteries, solar cells and thermoelectric conversion. Graphene as a catalyst carrier of hydrogen fuel cells has been further modified to obtain higher and more uniform metal dispersion, hence improving the electrocatalyst activity. Moreover, it can complement the network of electroactive materials to buffer the change of electrode volume and prevent the breakage and aggregation of electrode materials, and graphene oxide is also used as a cheap and sustainable proton exchange membrane. In lithium-ion batteries, substituting heteroatoms for carbon atoms in graphene composite electrodes can produce defects on the graphitized surface which have a good reversible specific capacity and increased energy and power densities. In solar cells, the performance of the interface and junction is enhanced by using a few layers of graphene-based composites and more electron-hole pairs are collected; therefore, the conversion efficiency is increased. Graphene has a high Seebeck coefficient, and therefore, it is a potential thermoelectric material. In this paper, we review the latest progress in the synthesis, characterization, evaluation and properties of graphene-based composites and their practical applications in fuel cells, lithium-ion batteries, solar cells and thermoelectric conversion.
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35

Xiang, Yiqiu, Ling Xin, Jiwei Hu, Caifang Li, Jimei Qi, Yu Hou, and Xionghui Wei. "Advances in the Applications of Graphene-Based Nanocomposites in Clean Energy Materials." Crystals 11, no. 1 (January 7, 2021): 47. http://dx.doi.org/10.3390/cryst11010047.

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Extensive use of fossil fuels can lead to energy depletion and serious environmental pollution. Therefore, it is necessary to solve these problems by developing clean energy. Graphene materials own the advantages of high electrocatalytic activity, high conductivity, excellent mechanical strength, strong flexibility, large specific surface area and light weight, thus giving the potential to store electric charge, ions or hydrogen. Graphene-based nanocomposites have become new research hotspots in the field of energy storage and conversion, such as in fuel cells, lithium-ion batteries, solar cells and thermoelectric conversion. Graphene as a catalyst carrier of hydrogen fuel cells has been further modified to obtain higher and more uniform metal dispersion, hence improving the electrocatalyst activity. Moreover, it can complement the network of electroactive materials to buffer the change of electrode volume and prevent the breakage and aggregation of electrode materials, and graphene oxide is also used as a cheap and sustainable proton exchange membrane. In lithium-ion batteries, substituting heteroatoms for carbon atoms in graphene composite electrodes can produce defects on the graphitized surface which have a good reversible specific capacity and increased energy and power densities. In solar cells, the performance of the interface and junction is enhanced by using a few layers of graphene-based composites and more electron-hole pairs are collected; therefore, the conversion efficiency is increased. Graphene has a high Seebeck coefficient, and therefore, it is a potential thermoelectric material. In this paper, we review the latest progress in the synthesis, characterization, evaluation and properties of graphene-based composites and their practical applications in fuel cells, lithium-ion batteries, solar cells and thermoelectric conversion.
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36

Pifferi, Valentina, Anna Testolin, Chiara Ingrosso, Maria Lucia Curri, Ilaria Palchetti, and Luigi Falciola. "Au Nanoparticles Decorated Graphene-Based Hybrid Nanocomposite for As(III) Electroanalytical Detection." Chemosensors 10, no. 2 (February 8, 2022): 67. http://dx.doi.org/10.3390/chemosensors10020067.

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Electrochemical sensors integrating hybrid nanostructured platforms are a promising alternative to conventional detection techniques for addressing highly relevant challenges of heavy metal determination in the environment. Hybrid nanocomposites based on graphene derivatives and inorganic nanoparticles (NPs) are ideal candidates as active materials for detecting heavy metals, as they merge the relevant physico-chemical properties of both the components, finally leading to a rapid and sensitive current response. In this work, a hybrid nanocomposite formed of reduced graphene oxide (RGO) sheets, surface functionalized by π-π interactions with 1-pyrene carboxylic acid (PCA), and decorated in situ by Au NPs, was synthesized by using a colloidal route. The hybrid nanocomposite was characterized by cyclic voltammetry and electrochemical impedance spectroscopy with respect to the corresponding single components, both bare and deposited as a layer-by-layer junction onto the electrode. The results demonstrated the high electrochemical activity of the hybrid nanocomposite with respect to the single components, highlighting the crucial role of the nanostructured surface morphology of the electrode and the PCA coupling agent at the NPs-RGO interphase in enhancing the nanocomposite electroactivity. Finally, the Au NP-decorated PCA-RGO sheets were tested by anodic stripping voltammetry of As(III) ion—a particularly relevant analyte among heavy metal ions—in order to assess the sensing ability of the nanocomposite material with respect to its single components. The nanocomposite has been found to present a sensitivity higher than that characterizing the bare components, with LODs complying with the directives established by the U.S. EPA and in line with those reported for state-of-the-art electrochemical sensors based on other Au-graphene nanocomposites.
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37

Goudarzi, H., and M. Khezerlou. "Tunneling conductance in a gapped graphene-based normal metal–insulator–d-wave superconductor junction: Case of massive Dirac electrons." Physica E: Low-dimensional Systems and Nanostructures 43, no. 2 (December 2010): 604–9. http://dx.doi.org/10.1016/j.physe.2010.10.002.

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38

Hajati, Y., A. Heidari, M. Z. Shoushtari, and G. Rashedi. "Spin-dependent barrier effects on the transport properties of graphene-based normal metal/ferromagnetic barrier/d-wave superconductor junction." Journal of Magnetism and Magnetic Materials 362 (August 2014): 36–41. http://dx.doi.org/10.1016/j.jmmm.2014.03.018.

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39

Kitaura, Ryo. "(Invited, Digital Presentation) Ultrathin Lateral Heterostructures Based on Two-Dimensional Semiconductors." ECS Meeting Abstracts MA2022-01, no. 10 (July 7, 2022): 784. http://dx.doi.org/10.1149/ma2022-0110784mtgabs.

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Low-dimensional (2D) materials, including carbon nanotubes, graphene, boron nitrides, and transition metal dichalcogenides (TMDs), have provided a platform to explore novel physics at the nano-scale. In addition to the fascinating properties of low-dimensional materials themselves, they allow exploring novel superstructures, such as heterojunctions, heterostacks, and superlattices, which give even broader possibilities. We are working on low-dimensional superstructures fabricated by (1) crystal growth with metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), and (2) stacking each component with the full-dry-transfer-based manipulation technique[1]-[6]. This presentation will focus on our recent works on low-dimensional superstructures, such as 2D ultrathin lateral superlattices. For example, we have successfully realized MoS2/WS2 2D lateral superlattices with a periodicity of down to one-atom-thick by MOCVD with an automatic valve control system. Also, we have observed characteristic PL arising probably from 1D junction structures. More details on the fabrication and optical properties of these superstructures will be addressed in this talk. [1] Y. Murai, et. al., ACS Nano 2021, doi.org/10.1021/ascnano.1c04584 [2] T. Hotta, et. al., ACS Nano 2021, 51:1370-1377. [3] T. Hotta, et al., Phys. Rev. B 2020, 102:115424. [4] S. Zhao et al., Phys. Rev. Lett. 2020, 124:106101. [5] Y. Uchiyama et. al., npj 2D Mater. App. 2019, 3:26. [6] M. Okada, et. al., ACS Nano 2018, 12:2498-2505.
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40

Yamamura, A., S. Honda, J. Inoue, and H. Itoh. "Magnetoresistance in Metal/graphene/metal Junctions." Journal of the Magnetics Society of Japan 34, no. 1 (2010): 34–38. http://dx.doi.org/10.3379/msjmag.0912re0013.

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41

Huang, Ke, Junfeng Lu, Donglin Li, Xianjia Chen, Dingfeng Jin, and Hongxiao Jin. "Au- or Ag-Decorated ZnO-Rod/rGO Nanocomposite with Enhanced Room-Temperature NO2-Sensing Performance." Nanomaterials 13, no. 16 (August 18, 2023): 2370. http://dx.doi.org/10.3390/nano13162370.

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To improve the gas sensitivity of reduced oxide graphene (rGO)-based NO2 room-temperature sensors, different contents (0–3 wt%) of rGO, ZnO rods, and noble metal nanoparticles (Au or Ag NPs) were synthesized to construct ternary hybrids that combine the advantages of each component. The prepared ZnO rods had a diameter of around 200 nm and a length of about 2 μm. Au or Ag NPs with diameters of 20–30 nm were loaded on the ZnO-rod/rGO hybrid. It was found that rGO simply connects the monodispersed ZnO rods and does not change the morphology of ZnO rods. In addition, the rod-like ZnO prevents rGO stacking and makes nanocomposite-based ZnO/rGO achieve a porous structure, which facilitates the diffusion of gas molecules. The sensors’ gas-sensing properties for NO2 were evaluated. The results reveal that Ag@ZnO rods-2% rGO and Au@ZnO rods-2% rGO perform better in low concentrations of NO2 gas, with greater response and shorter recovery time at the ambient temperature. The response and recovery times with 15 ppm NO2 were 132 s, 139 s and 108 s, 120 s, and the sensitivity values were 2.26 and 2.87, respectively. The synergistic impact of ZnO and Au (Ag) doping was proposed to explain the improved gas sensing. The p-n junction formed on the ZnO and rGO interface and the catalytic effects of Au (Ag) NPs are the main reasons for the enhanced sensitivity of Au (Ag)@ZnO rods-2% rGO.
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42

Ghosal, Sanghamitra, and Partha Bhattacharyya. "ZnO/RGO Heterojunction Based near Room Temperature Alcohol SENSOR with Improved Efficiency." Engineering Proceedings 6, no. 1 (May 17, 2021): 25. http://dx.doi.org/10.3390/i3s2021dresden-10073.

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The systematic optimization of surface engineering (dimensionality) indeed plays a crucial role in achieving efficient vapor-sensing performance. Among various semiconducting metal oxides, owing to some of its unique features and advantages, ZnO has attracted researchers on a global scale due to its application in various fields, including chemical sensors. The concomitant optimization of the surface attributes (varying different dimensions) of ZnO have become a sensation for the entire research community. Moreover, the small thickness and extremely large surface of exfoliated 2D nanosheets render the gas sensing material an ideal candidate for achieving strong coupling with different gas molecules. However, temperature is a crucial factor in the field of chemical sensing. Recently, graphene-based gas sensors have attracted attention due to their variety of structures, unique sensing performances and room temperature working conditions. In this work, a highly sensitive and fast responsive low temperature (60 °C)-based ethanol sensor, based on RGO/2D ZnO nanosheets hybrid structure, is reported. After detailed characterizations, the vapor sensing potentiality of this sensor was tested for the detection of ethanol. The ethanol sensor offered the response magnitude of 89% (100 ppm concentration) with response and recovery time of 12 s/29 s, respectively. Due to excessively high number of active sites for VOC interaction, with high yield synthesis process and appreciably high carrier mobility, this has paved the way for developing future generation, miniaturized and flexible (wearable) vapor sensor devices, meeting the multidimensional requirements for traditional and upcoming (health/medical sector) applications. The underlying mechanistic framework for vapor sensing, using this hybrid junction, is explained with the Energy Band Diagram.
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43

Chaves, Ferney A., David Jiménez, Jaime E. Santos, Peter Bøggild, and José M. Caridad. "Electrostatics of metal–graphene interfaces: sharp p–n junctions for electron-optical applications." Nanoscale 11, no. 21 (2019): 10273–81. http://dx.doi.org/10.1039/c9nr02029b.

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44

Jin, Xin, Yu-Yang Zhang, Sokrates T. Pantelides, and Shixuan Du. "Integration of graphene and two-dimensional ferroelectrics: properties and related functional devices." Nanoscale Horizons 5, no. 9 (2020): 1303–8. http://dx.doi.org/10.1039/d0nh00255k.

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We employ density-functional theory calculations and predict new, stable, monolayer ferroelectric materials, Al2O3/Y2O3 in the QL-In2Se3 structure, and that metal/QL-M2O3/graphene structures can function as prototype FE tunnel junctions or potentially graphene p–n junctions.
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45

Casalino, Maurizio. "Silicon Meets Graphene for a New Family of Near-Infrared Schottky Photodetectors." Applied Sciences 9, no. 18 (September 5, 2019): 3677. http://dx.doi.org/10.3390/app9183677.

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In recent years, graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions, opening the path to the realization of near-infrared photodetectors based on the internal photoemission effect where graphene plays the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.
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46

Yan, Weixian, and Min Guo. "Electron transmission across normal metal-strained graphene–normal metal junctions." Physica B: Condensed Matter 599 (December 2020): 412484. http://dx.doi.org/10.1016/j.physb.2020.412484.

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47

Mochizuki, Yoneko, and Hideo Yoshioka. "Transport properties of normal metal–graphene nanoribbon–normal metal junctions." Physica E: Low-dimensional Systems and Nanostructures 42, no. 4 (February 2010): 722–25. http://dx.doi.org/10.1016/j.physe.2009.10.035.

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48

Arachchige, Hashitha M. M. Munasinghe, Nanda Gunawardhana, Dario Zappa, and Elisabetta Comini. "UV Light Assisted NO2Sensing by SnO2/Graphene Oxide Composite." Proceedings 2, no. 13 (November 23, 2018): 787. http://dx.doi.org/10.3390/proceedings2130787.

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Nitric oxide (NO2) is one of the air pollutants that pose serious environmental concerns over the years. In this study, SnO2 nanowires were synthesized by evaporation-condensation method and graphene oxide were synthesized using modified Hummers method for low temperature NO2 detection. Drop cast method was used to transfer graphene oxide (GO), to form composite GO-metal oxide p-n junctions. With integration of reduce graphene oxide (rGO), the UV light absorption was enhanced. This metal oxide composite has shown a reversible response in detecting low concentrations of NO2 under UV irradiation, with a working temperature range of 50–150 °C. Pure SnO2 shows 20% response to NO2 (4 ppm) in dark conditions, while the response increasesupto60%usingUVirradiationat50°C.Furthermore, SnO2/rGOshowsa40%ofresponse in dark, while the response increases to 160% under UV light illumination. This composite exhibits excellent recovery and maintains the baseline under UV light at low temperatures, which effectively overcome the drawbacks of low recovery typically shown by metal oxide gas sensors at low temperature.
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49

Semkin, Valentin, Dmitry Mylnikov, Elena Titova, Sergey Zhukov, and Dmitry Svintsov. "Gate-controlled polarization-resolving mid-infrared detection at metal–graphene junctions." Applied Physics Letters 120, no. 19 (May 9, 2022): 191107. http://dx.doi.org/10.1063/5.0088724.

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The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable external polarizers. Here, we experimentally demonstrate the feasibility to resolve the polarization of mid-infrared light with a single chemical-vapor-deposited graphene-channel device with dissimilar metal contacts. This possibility stems from an unusual dependence of photoresponse at graphene–metal junctions on gate voltage and polarization angle. Namely, there exist certain gate voltages providing the polarization-insensitive signal; operation at these voltages can be used for power calibration of the detector. At other gate voltages, the detector features very strong polarization sensitivity, with the ratio of signals for two orthogonal polarizations reaching [Formula: see text]. Operation at these voltages can provide information about polarization angles, after the power calibration. We show that such unusual gate- and polarization-dependence of photosignal can appear upon competition of isotropic and anisotropic photovoltage generation pathways and discuss the possible physical candidates.
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50

De Sanctis, Adolfo, Jake Mehew, Monica Craciun, and Saverio Russo. "Graphene-Based Light Sensing: Fabrication, Characterisation, Physical Properties and Performance." Materials 11, no. 9 (September 18, 2018): 1762. http://dx.doi.org/10.3390/ma11091762.

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Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl 3 is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of devices with high gain and responsivity. In this work, we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse, the performance and possible future paths of investigation.
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