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Journal articles on the topic 'Metal-dopant'

Author: Grafiati

Published: 30 May 2022

Last updated: 31 May 2022

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1

Park, Jin-Hong, Woo-Shik Jung, and Hyun-Yong Yu. "Dopant-dependence of one-step metal-induced dopant activation process in silicon." Current Applied Physics 12, no. 3 (May 2012): 995–97. http://dx.doi.org/10.1016/j.cap.2012.01.002.

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2

Wang, Ting, Yan Dong Mao, Fang Peng Tang, Jun Xing, and Li Guang Wu. "Crystallization and Photocatalytic-Activity of TiO₂ Doped with Metal Ions Prepared by Adsorption Phase Synthesis." Advanced Materials Research 624 (December 2012): 194–99. http://dx.doi.org/10.4028/www.scientific.net/amr.624.194.

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TiO2 photocatalysts doped with different metal ions were prepared by adsorption phase synthesis. The influence of different dopant metal ions with various concentrations on the crystallization of TiO2 was ex-plored by XRD. Then photodegradation experiments of methyl-orange were employed to evaluate the activity of these photocatalysts. The results indicated that the crystallization of TiO2 was restricted after doping, due to replacement of Ti4+ in TiO2 lattice structure by other metal ions. And the restriction became stronger with radius and concentration of doping ions increasing. There was an optimum dopant concentration appeared during preparation of TiO2 doped with Cd2+ and Fe3+. When dopant concentration was less or more than this optimum value, the photocatalytic activity of TiO2 doped with metal ions was lower than that of TiO2 without doping. Since radius of Fe3+ was close to Ti4+, the influence of Fe3+ dopant concentration on crystallization and activity of TiO2 was more obvious than that of Cd2+ doping.

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3

Rojanasuwan, Sunit, Pakorn Prajuabwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, and Jiti Nukeaw. "The Effect of the Central Metal Atom on the Structural Phase Transition of Indium Doped Metal Phthalocyanine." Advanced Materials Research 717 (July 2013): 146–52. http://dx.doi.org/10.4028/www.scientific.net/amr.717.146.

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We investigate the effect of central metal atom on the phthalocyanine (Pc) molecular crystals as intercalated with indium. As dopant, indium has physical interaction with some atom in the ring of Pc molecule and there is charge transfer between indium atom and Pc ring atom. Since In-doped Pc is a hole doping which increase positive charge carriers and the HOMO of ZnPc, CuPc, NiPc and MgPc are localized on the phthalocyanine ring, then, the central metal atom e.g. Zn, Cu, Ni and Mg are not directly involved with the charge transfer between indium dopant and their Pc molecule. The structural phase transition from α phase to β phase of ZnPc upon doping with indium is another evidence for the existing of charge transfer between dopant atom and matrix Pc molecule. A comparative experiment of optical absorption spectrum of each metal Pc reveals that the central metal atom will affect the forming of crystal structure whether will be α phase or β phase as intercalated with indium.

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Drabczyk, Kazimierz, Edyta Wróbel, Grazyna Kulesza-Matlak, Wojciech Filipowski, Krzysztof Waczynski, and Marek Lipinski. "Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes." Microelectronics International 33, no. 3 (August 1, 2016): 167–71. http://dx.doi.org/10.1108/mi-03-2016-0031.

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Purpose The purpose of this study is comparison of the diffusion processes performed using the commercial available dopant paste made by Filmtronics and the original prepared liquid dopant solution. To decrease prices of industrially produced silicon-based solar cells, the new low-cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, anti-reflective layers and metal electrodes. This type of cells is prepared usually using phosphorus oxychloride diffusion source and metal pastes for screen printing. The diffusion process in diffusion furnace with quartz tube is slow, complicated and requires expensive equipment. The alternative for this technology is very fast in-line processing using the belt furnaces as an equipment. This approach requires different dopant sources. Design/methodology/approach In this work, the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution. The investigation was focused on dopant sources fabrication and diffusion processes. The doping solution was made in two stages. In the first stage, a base solution (without dopants) was made: dropwise deionized (DI) water and ethyl alcohol were added to a solution consisting of tetraethoxysilane (TEOS) and 99.8 per cent ethyl alcohol. Next, to the base solution, orthophosphoric acid dissolved in ethyl alcohol was added. Findings Diffused emitter layers with sheet resistance around 60 Ω/sq were produced on solar grade monocrystalline silicon wafers using two types of dopant sources. Originality/value In this work, the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution.

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5

Probst, V., H. Schaber, A. Mitwalsky, H. Kabza, B. Hoffmann, K. Maex, and L. Van den hove. "Metal‐dopant‐compound formation in TiSi2and TaSi2: Impact on dopant diffusion and contact resistance." Journal of Applied Physics 70, no. 2 (July 15, 1991): 693–707. http://dx.doi.org/10.1063/1.349625.

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6

Saga, Koichiro. "Diffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion Implantation." Solid State Phenomena 195 (December 2012): 261–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.261.

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Metallic contamination on silicon surfaces has a detrimental impact on ULSI device performance and yield. Surface metal impurities degrade gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and result in junction leakage. Surface metal impurities penetrate silicon by the colliding with dopant during ion implantation and are also diffused in silicon by subsequent annealing [. The diffusion behavior of metal impurities in silicon is well-known [. While metal impurities often penetrate silicon through the silicon oxide in ULSI processing, little work has been reported on the diffusion behavior of metal impurities penetrating silicon oxide. We demonstrated the diffusion behavior of metal impurities penetrating silicon substrates with different thickness of silicon oxide by the collision with dopant during ion implantation.

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7

CHADWICK, A. "EXAFS studies of dopant sites in metal oxides." Solid State Ionics 63-65 (September 1993): 721–27. http://dx.doi.org/10.1016/0167-2738(93)90186-7.

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8

Just, Oliver, and William Rees. "Metal amides: versatile dopant precursors for electronic materials." Advanced Materials for Optics and Electronics 10, no. 3-5 (2000): 213–21. http://dx.doi.org/10.1002/1099-0712(200005/10)10:3/5<213::aid-amo419>3.0.co;2-#.

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9

Ferrari, Piero, Guillaume Libeert, Nguyen Minh Tam, and Ewald Janssens. "Interaction of carbon monoxide with doped metal clusters." CrystEngComm 22, no. 29 (2020): 4807–15. http://dx.doi.org/10.1039/d0ce00733a.

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10

Canales, Mónica, Juan Manuel Ramírez-de-Arellano, Juan Salvador Arellano, and Luis Fernando Magaña. "Ab Initio Study of the Interaction of a Graphene Surface Decorated with a Metal-Doped C30 with Carbon Monoxide, Carbon Dioxide, Methane, and Ozone." International Journal of Molecular Sciences 23, no. 9 (April 29, 2022): 4933. http://dx.doi.org/10.3390/ijms23094933.

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Using DFT simulations, we studied the interaction of a semifullerene C30 and a defected graphene layer. We obtained the C30 chemisorbs on the surface. We also found the adsorbed C30 chemisorbs, Li, Ti, or Pt, on its concave part. Thus, the resulting system (C30-graphene) is a graphene layer decorated with a metal-doped C30. The adsorption of the molecules depends on the shape of the base of the semifullerene and the dopant metal. The CO molecule adsorbed without dissociation in all cases. When the bottom is a pentagon, the adsorption occurs only with Ti as the dopant. It also adsorbs for a hexagon as the bottom with Pt as the dopant. The carbon dioxide molecule adsorbs in the two cases of base shape but only when lithium is the dopant. The adsorption occurs without dissociation. The ozone molecule adsorbs on both surfaces. When Ti or Pt are dopants, we found that the O3 molecule always dissociates into an oxygen molecule and an oxygen atom. When Li is the dopant, the O3 molecule adsorbs without dissociation. Methane did not adsorb in any case. Calculating the recovery time at 300 K, we found that the system may be a sensor in several instances.

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11

Saga, Koichiro, Shunsuke Kobayashi, and Koji Sueoka. "Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing." Solid State Phenomena 219 (September 2014): 265–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.265.

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Metallic contamination on silicon surfaces has a detrimental impact on the performance and yield of ULSI devices. Surface metal impurities degrade the gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and this results in junction leakage. The diffusion behavior of these metal impurities in silicon is well-known [1]. On the other hand, these metal impurities often penetrate the silicon through the silicon oxide or silicon nitride films in ULSI processing. The surface metal impurities penetrate the silicon by colliding with the dopant during ion implantation and are also diffused in silicon by subsequent annealing [2]. While the diffusion behavior of the metal impurities penetrating silicon substrates through the silicon oxide films has been reported [3], little work has been reported on the diffusion behavior of the metal impurities penetrating silicon nitride films. We demonstrated the diffusion behavior of the metal impurities penetrating silicon substrates through a CVD SiN film due to the collision with dopant during ion implantation.

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12

Tan, Hong Ling, Cong Ying Jia, Chao Xiang, and Ying Xiang Yang. "Impact Electrical Property of Alkali Metal Doped ZnO." Advanced Materials Research 468-471 (February 2012): 1501–7. http://dx.doi.org/10.4028/www.scientific.net/amr.468-471.1501.

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Calculate the electronic structure of alkali metal ion-doped Zn crystal, based on density functional theory (DFT) first-principles plane-wave ultra-soft pseudo-potential method. Analyze the band structure of alkali metal ion-doped ZnO crystal, and the electronic density of states. The results indicated that in theory, the doping of alkali metal ions are able to form a p-type ZnO semiconductor, and introduce in the deep acceptor levels. In the actual substitution process, the dopant ions may enter the interstitial site. Thus the alkali metal ions are tending to become donor interstitial impurities. In addition, since the ionic radius of K is larger than the ionic radiuses of Li and Na. And K+ formed the minimum acceptor level (0.078eV), which is a shallow acceptor level. K+ is better than Li+ and Na+ as a dopant. In short, they are not good p-type dopants.

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13

Bracht, Hartmut, S. Brotzmann, and Alexander Chroneos. "Impact of Carbon on the Diffusion of Donor Atoms in Germanium." Defect and Diffusion Forum 289-292 (April 2009): 689–96. http://dx.doi.org/10.4028/www.scientific.net/ddf.289-292.689.

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We report experiments on the diffusion of n-type dopants in isotopically controlled Ge multilayer structures doped with carbon. The diffusion profiles reveal a strong aggregation of the dopants within the carbon-doped layers and a retarded penetration depth compared to dopant diffusion in high purity natural Ge. Dopant aggregation and diffusion retardation is strongest for Sb and similar for P and As. Successful modeling of the simultaneous self- and dopant diffusion is performed on the basis of the vacancy mechanism and additional reactions that take into account the formation of carbon-vacancy-dopant and dopant-vacancy complexes. The stability of these complexes is confirmed by density functional theory calculations. The overall consistency between experimental and theoretical results supports the stabilization of donor-vacancy complexes in Ge by the presence of carbon and the dopant deactivation via the formation of dopant-vacancy complexes. These results help to develop concepts to suppress the enhanced diffusion of n-type dopants and the donor deactivation in Ge. Both issues hamper the formation of ultra shallow donor profiles with high active dopant concentrations that are required for the fabrication of Ge-based n-type metal oxide semiconductor field effect transistors.

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14

Kim, Young-Su, Min-Sun Kim, and Seung-Ki Joo. "Effect of Adjacent Metal and Dopant on Pd-Metal Induced Lateral Crystallization." Journal of The Electrochemical Society 153, no. 2 (2006): H19. http://dx.doi.org/10.1149/1.2138673.

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15

Mitwalsky, A., and H. Oppolzer. "TEM characterization of metallization systems in VLSI." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 818–19. http://dx.doi.org/10.1017/s0424820100088403.

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Detailed knowledge of the properties of metallization systems used in silicon VLSI technolgy is essential to evaluate application and to achieve stable device operation. The progressively shrinking device dimensions require analytical techniques allowing to detect interfacial reactions or precipitation with nanometer resolution, particularly for the development of new processes. Transmission electron microscopy (TEM) of thin cross sections represents a powerful tool for obtaining such information directly. In addition to imaging analytical TEM allows phase and element identification with high spatial resolution.The interaction during processing between silicides of various metals (Ti, Co, Ta and W) and different dopants (B, As) in silicon was investigated since possible metal dopant reactions may lead to dopant depletion in the silicon. In the case of Ti and Ta silicide the formation of metal dopant compounds during heat treatment was indeed observed by scanning electron microscopy and TEM.

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16

Ma, Yanjiao, Yuan Ma, Gabriele Giuli, Thomas Diemant, R. Jürgen Behm, Dorin Geiger, Ute Kaiser, Ulderico Ulissi, Stefano Passerini, and Dominic Bresser. "Conversion/alloying lithium-ion anodes – enhancing the energy density by transition metal doping." Sustainable Energy & Fuels 2, no. 12 (2018): 2601–8. http://dx.doi.org/10.1039/c8se00424b.

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17

Han, Jinkyu, Lei Wang, and Stanislaus S. Wong. "Morphology and dopant-dependent optical characteristics of novel composite 1D and 3D-based heterostructures of CdSe nanocrystals and LaPO4:Re (Re = Eu, Ce, Tb) metal phosphate nanowires." RSC Adv. 4, no. 66 (2014): 34963–80. http://dx.doi.org/10.1039/c4ra05933f.

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18

Yamato, Tatsunori, Koji Sueoka, and Takahiro Maeta. "First-Principles Analysis on Interaction between Dopant (Ga, Sb) and Contamination Metal Atoms in Ge Crystals." Solid State Phenomena 205-206 (October 2013): 417–21. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.417.

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The lowest energetic configurations of metal impurities in 4throw (Sc - Zn), 5throw (Y - Cd) and 6throw (Hf - Hg) elements in Ge crystals were determined with density functional theory calculations. It was found that the substitutional site is the lowest energetic configuration for most of the calculated metals in Ge. The most stable configurations of dopant (Ga, Sb) - metal complexes in Ge crystals were also investigated. Following results were obtained. (1) For Ga dopant, 1st neighbor T-site is the most stable for metals in group 3 to 7 elements while substitutional site next to Ga atom is the most stable for metals in group 8 to 12 elements. (2) For Sb dopant, substitutional site next to Sb atom is the most stable for all calculated metals. Binding energies of the interstitial metalMiwith the substitutional dopantDswere obtained by the calculated total energies. The calculated results for Ge were compared with those for Si.

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19

Umar, Ahmed, Musthafa Ottakam Thotyl, and Abdullahi Hadi. "Perovskite-structured Active Solid Catalyst for Biofuel Synthesis." Catalysis for Sustainable Energy 6, no. 1 (January 1, 2019): 1–5. http://dx.doi.org/10.1515/cse-2019-0001.

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Abstract A solid catalyst tailored to perovskite structure was synthesized and investigated for catalytic activity in a transesterification reaction to form biodiesel. The catalyst has demonstrated high catalytic activity and selectivity for biodiesel under very mild reaction conditions and short reaction times. The catalyst system has shown robust resistance to leaching of the active phase when reused. The performance was attributable to the perovskite structure and the dopant metal used. Hence, this work has shown that the structure and dopant metal of the solid catalyst could be tailored to enhance catalytic activity and durability for renewable fuel synthesis.

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20

Kim, Hyung Yoon, Yong Woo Lee, Jae Hyo Park, Hee Jae Chae, and Seung Ki Joo. "Effect of dopant on metal induced lateral crystallization rate." Thin Solid Films 589 (August 2015): 735–40. http://dx.doi.org/10.1016/j.tsf.2015.06.052.

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21

Rossell, Marta D., Quentin M. Ramasse, Scott D. Findlay, Felix Rechberger, Rolf Erni, and Markus Niederberger. "Direct Imaging of Dopant Clustering in Metal–Oxide Nanoparticles." ACS Nano 6, no. 8 (July 10, 2012): 7077–83. http://dx.doi.org/10.1021/nn3021212.

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22

Fischer, Sergej, Hauke Ingolf Kremer, Birger Berghoff, Tobias Maß, Thomas Taubner, and Joachim Knoch. "Dopant-free complementary metal oxide silicon field effect transistors." physica status solidi (a) 213, no. 6 (February 8, 2016): 1494–99. http://dx.doi.org/10.1002/pssa.201532998.

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23

Kaczmarowski, Amy, Clark Snow, Stephen Foiles, Corbett Battaile, and Dane Morgan. "Dopant binding with vacancies and helium in metal hydrides." Journal of Nuclear Materials 559 (February 2022): 153437. http://dx.doi.org/10.1016/j.jnucmat.2021.153437.

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24

Li, Yuexiang, Shaoqin Peng, Fengyi Jiang, Gongxuan Lu, and Shuben Li. "Effect of doping TiO2 with alkaline-earth metal ions on its photocatalytic activity." Journal of the Serbian Chemical Society 72, no. 4 (2007): 393–402. http://dx.doi.org/10.2298/jsc0704393l.

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TiO2 photocatalysts doped with alkaline-earth metal ions were prepared by the impregnation and coprecipitation methods. The sample were characterized by XRD, XPS and IR spectroscopy. Their activities were evaluated by the photocatalytic production of hydrogen. The activities of the doped photocatalysts dopended on the size of the dopant ions and the doping method. The optimum molar contents of dopant ions Be2+, Mg2+, Ca2+, Sr2+, Ba2+ were 1.25, 1.25, 2.25, 2.25 and 2.25 at. %, respectively. The optimum calcination temperature and time were 400?C and 1 h. .

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25

Barabás, Júlia, Piero Ferrari, Vladimir Kaydashev, Jan Vanbuel, Ewald Janssens, and Tibor Höltzl. "The effect of size, charge state and composition on the binding of propene to yttrium-doped gold clusters." RSC Advances 11, no. 47 (2021): 29186–95. http://dx.doi.org/10.1039/d1ra03262c.

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26

Li, Bin, Yihan Zhang, Yang Liu, Yiwen Ren, Xiaoting Zhu, Lingjie Sun, Xiaotao Zhang, Fangxu Yang, Rongjin Li, and Wenping Hu. "Highly Efficient Contact Doping for High-Performance Organic UV-Sensitive Phototransistors." Crystals 12, no. 5 (May 2, 2022): 651. http://dx.doi.org/10.3390/cryst12050651.

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Organic ultraviolet (UV) phototransistors are promising for diverse applications. However, wide-bandgap organic semiconductors (OSCs) with intense UV absorption tend to exhibit large contact resistance (Rc) because of an energy-level mismatch with metal electrodes. Herein, we discovered that the molecular dopant of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was more efficient than the transition metal oxide dopant of MoO3 in doping a wide-bandgap OSC, although the former showed smaller electron affinity (EA). By efficient contact doping, a low Rc of 889 Ω·cm and a high mobility of 13.89 cm2V−1s−1 were achieved. As a result, UV-sensitive phototransistors showed high photosensitivity and responsivity.

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27

Lee, Jin Ah, Won Jun Lee, Joonwon Lim, and Sang Ouk Kim. "N-Dopant-Mediated Growth of Metal Oxide Nanoparticles on Carbon Nanotubes." Nanomaterials 11, no. 8 (July 22, 2021): 1882. http://dx.doi.org/10.3390/nano11081882.

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Metal oxide nanoparticles supported on heteroatom-doped graphitic surfaces have been pursued for several decades for a wide spectrum of applications. Despite extensive research on functional metal oxide nanoparticle/doped carbon nanomaterial hybrids, the role of the heteroatom dopant in the hybridization process of doped carbon nanomaterials has been overlooked. Here, the direct growth of MnOx and RuOx nanoparticles in nitrogen (N)-doped sites of carbon nanotubes (NCNTs) is presented. The quaternary nitrogen (NQ) sites of CNTs actively participate in the nucleation and growth of the metal nanoparticles. The evenly distributed NQ nucleation sites mediate the generation of uniformly dispersed <10 nm diameter MnOx and RuOx nanoparticles, directly decorated on NCNT surfaces. The electrochemical performance of the resultant hybridized materials was evaluated using cyclic voltammetry. This novel hybridization method using the dopant-mediated nucleation and growth of metal oxides suggests ways that heteroatom dopants can be utilized to optimize the structure, interface and corresponding properties of graphitic carbon-based hybrid materials.

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28

Liu, Shen, Daqin Chen, Zhongyi Wan, Yang Zhou, Ping Huang, and Zhenguo Ji. "Phase structure control and optical spectroscopy of rare-earth activated GdF3 nanocrystal embedded glass ceramics via alkaline-earth/alkali-metal doping." RSC Advances 6, no. 75 (2016): 71176–87. http://dx.doi.org/10.1039/c6ra17332b.

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29

Qin, Guo Qiang, Guang Lei Zhang, Shi Min Liu, Hua Fu, and Jing Wen. "Ab Initio Study on Ta:SnO₂." Advanced Materials Research 160-162 (November 2010): 574–78. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.574.

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The structural, electronic and optical properties of a tantalum doped rutile-phased stannic oxide were investigated by ab initio calculations. The Ta dopant doesn’t change the lattice symmetry of rutile phase, but brings about a smaller volume expansion comparing with Sb:SnO2, a increase in thermal stability, a semiconductor-metal transition in electronic structure and a red shift in the optical spectrum. The intra-band excitation caused by Ta dopant leads to to a remarkable enhancement of optical peaks in the infrared region, while the stability of optical spectrum in the visible light region supports the preservation of high visible transparency of Ta:SnO2 with dopant concentration as high as 4.17 at.%.

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30

Pandey, Kavita, Pankaj Yadav, and Indrajit Mukhopadhyay. "Elucidating the effect of copper as a redox additive and dopant on the performance of a PANI based supercapacitor." Physical Chemistry Chemical Physics 17, no. 2 (2015): 878–87. http://dx.doi.org/10.1039/c4cp04321a.

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31

Zhou, Chuan, Haiyang Yuan, P. Hu, and Haifeng Wang. "A general doping rule: rational design of Ir-doped catalysts for the oxygen evolution reaction." Chemical Communications 56, no. 96 (2020): 15201–4. http://dx.doi.org/10.1039/d0cc06282k.

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32

Carey, J. J., and M. Nolan. "Cation doping size effect for methane activation on alkaline earth metal doping of the CeO2 (111) surface." Catalysis Science & Technology 6, no. 10 (2016): 3544–58. http://dx.doi.org/10.1039/c5cy01787d.

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33

Chen, Liyu, Lei Zhang, Zhijie Chen, Hongli Liu, Rafael Luque, and Yingwei Li. "A covalent organic framework-based route to the in situ encapsulation of metal nanoparticles in N-rich hollow carbon spheres." Chemical Science 7, no. 9 (2016): 6015–20. http://dx.doi.org/10.1039/c6sc01659f.

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Covalent organic frameworks doped with metal cations can be used as novel precursors for the in situ encapsulation of metal NPs into N doped hollow carbon spheres. The integration of the hollow structure, N dopant and ultrafine Pd NPs gives the hybrid nanocomposites advanced catalytic performance.

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Weber, W. J., C. W. Griffin, and J. L. Bates. "Electrical and thermal transport properties of the Y1 − x Mx CrO3 system." Journal of Materials Research 1, no. 5 (October 1986): 675–84. http://dx.doi.org/10.1557/jmr.1986.0675.

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The effects of substituting divalent metal ions (Mg, Ca, Sr, Ba) for Y in YCrO3 were investigated by electrical conductivity, Seebeck coefficient, and thermal conductivity measurements. The electrical conductivity results were consistent with the hopping-type conduction of a temperature-independent concentration of small polarons, with measured activation energies of 0.18-0.26 eV. The Seebeck coefficient increased nearly linearly with temperature and indicated p-type conductivity. Both electrical conductivity and Seebeck coefficient results show a strong dependence on dopant size (ionic radius) and indicate that the highest carrier concentrations were associated with Ca as the dopant, which is attributed to the similar ionic radii of Ca2+ and Y3+. The thermal conductivity decreased slightly with temperature and dopant concentration.

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35

Christoforidis, Konstantinos C., and Marcos Fernández-García. "Photoactivity and charge trapping sites in copper and vanadium doped anatase TiO2 nano-materials." Catalysis Science & Technology 6, no. 4 (2016): 1094–105. http://dx.doi.org/10.1039/c5cy00929d.

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36

Seetha, Mahalingam, Mariyappan Thambidurai, and D. Mangalaraj. "Investigation on the Effect of Dopant Concentration on the Change in Shape of ITO Nanoparticles - Prepared Using Alcoholysis Method." Advanced Materials Research 678 (March 2013): 168–71. http://dx.doi.org/10.4028/www.scientific.net/amr.678.168.

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A simple room temperature ethanol assisted alcoholysis synthesis was adopted for the preparation of Sn doped indium oxide nanoparticles. Initially, pure indium oxide nanoparticles prepared using the method results in nanocubes, sized about 80 nm was identified using TEM analysis. When the dopant Sn was added at lower concentration the formed cubes were found to contain tiny particles inside nanocubes. As the concentration of Sn increases, it is observed that the particles were no more in cubical shape. For higher concentration of Sn, the formed particles were taken the shape of nanorods which are bunched together. This is one of the interesting results obtained for room temperature chemical synthesis. The concentration of the metal dopant was analyzed using XPS analysis and the obtained XRD pattern showed the dopant shift in 2θ. This work can be further extended to the field of gas sensors. Because, the metal oxide based gas sensors systems depends on the size and shape of the nanoparticles which can improve the sensing behavior of the material.

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37

Zukuls, Anzelms, Raivis Eglītis, Tanel Käämbre, Reinis Ignatans, Krišjānis Šmits, Kristaps Rubenis, Dzintars Začs, and Andris Šutka. "Permanent photodoping of plasmonic gallium-ZnO nanocrystals." Nanoscale 12, no. 12 (2020): 6624–29. http://dx.doi.org/10.1039/d0nr01005g.

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The concentration of delocalized electrons in plasmonic metal oxide nanocrystals can be increased permanently by photodoping because the electron compensation becoming the dominant compensation mechanism for the aliovalent donor dopant.

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38

He, Zhengyu, Kuang He, Alex W. Robertson, Angus I. Kirkland, Dongwook Kim, Jisoon Ihm, Euijoon Yoon, Gun-Do Lee, and Jamie H. Warner. "Atomic Structure and Dynamics of Metal Dopant Pairs in Graphene." Nano Letters 14, no. 7 (June 19, 2014): 3766–72. http://dx.doi.org/10.1021/nl500682j.

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39

AKUBUIRO, E. "Dopant-induced metal-support interactions 1. Influence on chemisorptive behavior." Journal of Catalysis 103, no. 2 (February 1987): 320–33. http://dx.doi.org/10.1016/0021-9517(87)90124-2.

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40

Hsiao, Ta Ching, Shen Tsao, Sergey Nagalyuk, and Evgeny Mokhov. "Characterization of Second-Phase Inclusion in Silicon Carbide Powders." Materials Science Forum 821-823 (June 2015): 100–103. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.100.

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A specific transition metal is used as a dopant element in silicon carbide powders to create the compensation effect. According to ab-initio simulation, vanadium, chromium, and manganese-induced compensation decrease the lifetime of the acceptor carrier and cause higher resistance when boron is the main impurity. Since the silicon carbide lattice has low solubility, excess metal precipitates on the surface of powders, particularly on the grain boundaries. The compositions of matrix and precipitation in the powders reveal obvious differences between the two areas. The X-ray diffraction (XRD) pattern shows the structure of VSi2, which indicates the existence of a second phase. Dual-beam focused ion beam (DBFIB) is used to further analyze the geography inside the powders. A cross-section view by DBFIB shows a second phase in the grains with a composition similar to that in the grain boundary. Metal-doped silicon carbide powders are used as starting materials to conduct crystal growth with better dopant element distribution.

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41

Aras, Mehmet, Sümeyra Güler-Kılıç, and Çetin Kılıç. "Enhancement of the magnetic anisotropy in single semiconductor nanowires via surface doping and adatom deposition." Nanotechnology 33, no. 20 (February 21, 2022): 205202. http://dx.doi.org/10.1088/1361-6528/ac50f0.

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Abstract The magnetic anisotropy of single semiconductor (ZnO and GaN) nanowires incorporating both a transition metal (Co and Mn, respectively) as a substitutional surface dopant and a heavy metal (Au, Bi, or Pt) adatom is studied by performing density-functional supercell calculations with the Hubbard U correction. It is found that a substantial enhancement in the magnetic anisotropy energy is obtained through the deposition of Bi; the deposition of Au and Pt leads to significant variation in other magnetic properties, but not in the magnetic anisotropy energy. An analysis within a band description shows that the coexistence of Bi adatom and a surface dopant with large spin moment activates a mechanism involving reorientation and readjustment of the spin moments of electrons in occupied bands in response to the change of magnetization direction, which promotes giant magnetic anisotropy. Our results for adsorption energetics indicate that the accommodation of Bi in the neighborhood of the surface dopant is more likely in GaN nanowires, because the Bi adatom does (not) tend to be closer to the Mn (Co) dopant on the surface of GaN (ZnO) nanowire. The stability of GaN nanowire with giant magnetic anisotropy owing to the incorporation of both Mn and Bi is demonstrated by performing ab initio molecular dynamics simulations at temperatures considerably higher than room temperature. These results suggest that adatom deposition and surface doping can be used complementarily to develop single nanowire-based spintronic devices.

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42

Debernardi, Alberto. "First principles simulations of microscopic mechanisms responsible for the drastic reduction of electrical deactivation defects in Se hyperdoped silicon." Physical Chemistry Chemical Physics 23, no. 43 (2021): 24699–710. http://dx.doi.org/10.1039/d1cp02899e.

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By first principles simulations of Se hyperdoped silicon we explain the drastic reduction of electrical deactivation defects when the dopant population approaches the critical concentration at which the insulator-to-metal transition occurs.

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43

KHERA, EJAZ AHMAD, HAFEEZ ULLAH, MUHAMMAD IMRAN, HASSAN ALGADI, FAYYAZ HUSSAIN, and RANA MUHAMMAD ARIF KHALIL. "THE FIRST PRINCIPLE STUDY OF COMPARISON OF DIVALENT AND TRIVALENT IMPURITY IN RRAM DEVICES USING GGA+U." Surface Review and Letters 28, no. 06 (March 5, 2021): 2150039. http://dx.doi.org/10.1142/s0218625x21500396.

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Resistive switching (RS) performances had prodigious attention due to their auspicious potential for data storage. Oxide-based devices with metal insulator metal (MIM) structure are more valuable for RS applications. In this study, we have studied the effect of divalent (nickel) as well as trivalent (aluminum) dopant without and with oxygen vacancy ([Formula: see text] in hafnia ([Formula: see text]-based resistive random-access memory (RRAM) devices. All calculations are carried out within the full potential linearized augmented plane-wave (FP-LAPW) method based on the WIEN2k code by using generalized gradient approximation (GGA) and generalized gradient approximation with U Hubbard parameters (GGA+U) approach. The studies of the band structure, density of states and charge density reveal that HfNiO2+Vo are more appropriate dopant to enhance the conductivity for RRAM devices.

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44

Cha, Yoo Lim, Sang-Jin Lee, and Young Soo Yoon. "Synthesis of Mn-, Ni-Doped LiAlO2 Matrix for Molten Carbonate Fuel Cell." Journal of Nanoscience and Nanotechnology 20, no. 9 (September 1, 2020): 5583–87. http://dx.doi.org/10.1166/jnn.2020.17624.

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The phase stability of electrolyte matrix was improved by metal dopant materials which are Ni and Mn. The Ni-, Mn-doped LiAlO2 and dopant-free LiAlO2 were prepared by the mechanochemical process (MCP). The effects of dopant material, molar ratio and type of precursor were investigated after heat treatment at 700 and 800 °C. As a results, the Mn-doped LiAlO2 prevents phase transition even at higher operating temperature. Also, the stability was increased when Mn4+ ion was adapted as a precursor source than Mn3+ ion and the minimum Mn content to maintain the α-phase after heat treatment at 800 °C is found to be LiAl0.75Mn0.25O2. This result suggested that the formation of nano-sized particles confirmed the applicability as a matrix material with excellent electrolyte impregnation.

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45

Whang, Chin Myung, J. G. Kim, and Hae Jin Hwang. "Photocatalytic Properties of the Transition Metal Doped TiO₂ Powder Prepared by Sol-Gel Process." Key Engineering Materials 280-283 (February 2007): 647–50. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.647.

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Transition metal-doped TiO2 powders as a photocatalyst were prepared by sol-gel process and Sb, Bi and Nb were introduced into them as dopants. The photocatalytic behaviors of the doped TiO2 powder were studied as a function of dopant, doping concentration and preparation conditions. X-ray diffraction, FT-Raman, B.E.T. and scanning electron microscopy were applied for structural and microstructural studies. Optical properties of the doped TiO2 powders were studied by UV-Visible Spectrometer and photocatalytic activity of the doped TiO2 was characterized in terms of the degradation of 1,4-dichlorobenzene. X-ray difraction analysis showed that doping with a transition metal ion suppresses anatase-to-rutile phase transition compared with the pure TiO2. The Sb and Nb-doped TiO2 powders did not exhibit any other diffraction peaks except those belonging to TiO2. On the other hand, a diffraction peak of Bi4Ti3O12 appears for 5 at.% Bi-doped samples. All of the doped TiO2 powders had higher specific surface area than undoped TiO2. Surface area increased with increasing dopant concentration depending on the dopant, from 33.9 m2/g to 55.4m2/g. The UV-visible absorption spectra of doped samples were red-shifted by 20~50nm according to the doping level. Also transition metal doped TiO2 powders exhibited better photocatalytic activity than the undoped TiO2. The increase in photoactivity is probably due to the increase in the interfacial electron transfer, red shifts, and better crystallinity.

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46

Wang, Xin, Xingyue Li, Canbin Ouyang, Zhen Li, Shuo Dou, Zhaoling Ma, Li Tao, Jia Huo, and Shuangyin Wang. "Nonporous MOF-derived dopant-free mesoporous carbon as an efficient metal-free electrocatalyst for the oxygen reduction reaction." Journal of Materials Chemistry A 4, no. 24 (2016): 9370–74. http://dx.doi.org/10.1039/c6ta03015g.

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Dopant-/metal-free mesoporous carbon has been prepared from nonporous MOFs, which is highly efficient for the electrocatalytic oxygen reduction reaction (ORR). The excellent ORR activity is attributed to both high specific surface area and mesoporous structure.

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47

Schipper, Florian, Mudit Dixit, Daniela Kovacheva, Michael Talianker, Ortal Haik, Judith Grinblat, Evan M. Erickson, et al. "Stabilizing nickel-rich layered cathode materials by a high-charge cation doping strategy: zirconium-doped LiNi0.6Co0.2Mn0.2O2." Journal of Materials Chemistry A 4, no. 41 (2016): 16073–84. http://dx.doi.org/10.1039/c6ta06740a.

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The high charge-state dopant Zr⁴⁺ improves the structural stability and electrochemical behavior of the lithiated transition metal oxide LiNi_0.6Co_0.2Mn_0.2O₂.

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48

ZHANG, Y., X. H. YAN, Y. D. GUO, and Y. XIAO. "EFFECT OF TRANSITION METAL DOPING ON MAGNETIZATION AND SPIN TRANSPORT OF DOMAIN WALL MADE BY NICKEL ATOMIC CHAIN." Surface Review and Letters 25, no. 07 (October 2018): 1950012. http://dx.doi.org/10.1142/s0218625x19500124.

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Based on density functional theory and nonequilibrium Green’s function method, we study the magnetic order and collinear/noncollinear spin transport of 180[Formula: see text] domain wall (DW) made by transition metal (TM)-doped Ni atomic chain. The results show that the TM doping reproduces characteristic features depending on the type of TM elements, the number of dopants and the initial magnetization distribution. In the collinear magnetization, which is obtained from the initial condition of abrupt DW, the two dopants show symmetric features while the single dopant presents a varying magnetic moment on the TM dopant when the number of 3d electrons of dopant increases. As the magnetization is noncollinear (spiral-like), the magnetization becomes complicated. For instance, the rotation sense of magnetization changes from clockwise to counter-clockwise for some TM dopants. In addition, the transmission of doped Ni chain shows two scattering mechanisms, i.e. electronic scattering due to quasi-bound state and due to the spin-flip scattering. Our results reported here provide considerable insights into the doping effect on magnetization and spin transport of atomic-scale DW.

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49

Riaz, Adeel, Amna Ashraf, Hymna Taimoor, Sofia Javed, Muhammad Aftab Akram, Mohammad Islam, Mohammad Mujahid, Iftikhar Ahmad, and Khalid Saeed. "Photocatalytic and Photostability Behavior of Ag- and/or Al-Doped ZnO Films in Methylene Blue and Rhodamine B Under UV-C Irradiation." Coatings 9, no. 3 (March 20, 2019): 202. http://dx.doi.org/10.3390/coatings9030202.

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Silver (Ag) and/or aluminum (Al)-doped zinc oxide (ZnO:Ag, ZnO:Al) films with different concentrations were produced using sol-gel process and investigated for wettability and photocatalysis. Water contact angle (CA) measurements indicated the films to be hydrophilic with reduced solid/liquid interfacial surface energy upon metal doping. The films were highly transparent (>94%) with red or blue shift in the absorption edge depending on the dopant type (Ag or Al) owing to the Burstein–Moss effect. The ZnO:Ag and ZnO:Al films with 0.5 and 1.0 wt.% metal dopant showed high degradation efficiency in methylene blue (MB) solution under UV irradiation, mainly due to an increase in the photogenerated electron–hole pair recombination time and hydroxyl radicals (·OH) generation. The MB degradation followed pseudo-first-order reaction with maximum apparent reaction rate constant of 2.40 h−1 for the 0.5 wt.% ZnO:Al film. ZnO films with 1.0 wt.% dopant demonstrated excellent photostability and recyclability even after several runs presumably due to reduced Zn2+ dissolution as well as blocking of the active surface area. ZnO:(Ag + Al) film containing 0.5 wt.% Al and Ag showed excellent UV photodegradation of MB and rhodamine blue (RhB) with high levels of photostability over five cycles.

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50

Dhiman, Shobhna, Ranjan Kumar, and Keya Dharamvir. "Small Al and Ga clusters trapped inside the Bucky-ball (C60) — A DFT study." International Journal of Modern Physics B 31, no. 12 (May 10, 2017): 1750092. http://dx.doi.org/10.1142/s0217979217500928.

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In the present paper, we have done a systematic study of structural and electronic properties of endohedrally doped C[Formula: see text] with Al and Ga atoms using density functional theory (DFT) with the help of Spanish initiative for electronic simulation with thousands of atoms (SIESTA) package in the generalized gradient approximation (GGA). The parameters calculated are binding energy/dopant atom, vertical ionization potential (VIP), vertical electron affinity (VEA), HOMO–LUMO gap and charge transfer. The stabilized ground state structures of Al[Formula: see text]@C[Formula: see text] ([Formula: see text]–10) and Ga[Formula: see text]@C[Formula: see text] ([Formula: see text]–10) show that a maximum of nine Al or Ga atoms can be encapsulated in C[Formula: see text] without distorting the cage significantly. Mulliken charge analysis shows an electron transfer from the metal dopant to the cage surface, except for Al[Formula: see text] ([Formula: see text]–10). The endohedral metal clusters adopt a more compact shape when inside C[Formula: see text], compared to its free-state configuration and its symmetry. The study of HOMO–LUMO gap reveals that the gap decreases with the increase in number of dopant atoms inside C[Formula: see text].

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