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Journal articles on the topic 'Metal density'

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Author: Grafiati

Published: 4 May 2024

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1

Shatha Raheem Helal Alhimidi, Manal A. Mohammed Al-Jabery, Nadia Ezzat Alkurbasy, and Muhsen Abood Muhsen Al-Ibadi. "QTAIM analysis for Metal - Metal and Metal- Non-metal Bonds in Tri-Osmium cluster." Journal of Kufa for Chemical Sciences 2, no. 10 (November 5, 2023): 299–310. http://dx.doi.org/10.36329/jkcm/2023/v2.i10.12523.

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Electron density of the interaction of the compound's chemical bonding has been computed using topological analysis. The findings suggest that Os-Os, Os-N, and Os-H bonds have experienced bond critical points (BCP) with corresponding bonds paths (BP). The presence of N-C bridging atoms is significantly impacted by electron density of Os2-Os3 bond distribution therefore no critical point found and bond path. So, due to their positive electron density (b), negative laplacian 2(b), and positive the total energy density H(b) values, the Os-NC, Os-H, and Os-CO bonds all have transit closed-shell topological properties.

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2

Macchi, Piero, Davide M. Proserpio, and Angelo Sironi. "Experimental Electron Density in a Transition Metal Dimer: Metal−Metal and Metal−Ligand Bonds." Journal of the American Chemical Society 120, no. 51 (December 1998): 13429–35. http://dx.doi.org/10.1021/ja982903m.

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3

Macchi, P., L. Garlaschelli, S. Martinengo, and A. Sironi. "Charge Density in Transition Metal Clusters: Supported vs Unsupported Metal−Metal Interactions." Journal of the American Chemical Society 121, no. 44 (November 1999): 10428–29. http://dx.doi.org/10.1021/ja9918977.

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4

Prajapati, Vinita, P. L. Verma P.L.Verma, Dhirendra Prajapati, and B. K. Gupta B.K.Gupta. "Density Functional Calculations of EPR Parameter g Tensors of Some Transition Metal Complexes." Indian Journal of Applied Research 2, no. 2 (October 1, 2011): 139–41. http://dx.doi.org/10.15373/2249555x/nov2012/52.

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5

Allahverdiyeva, Kh V., N. T. Kakhramanov, M. I. Abdullin, G. S. Martynova, and D. R. Nurullayeva. "RHEOLOGICAL PROPERTIES OF METAL-FILLED SYSTEMS BASED ON HIGH-DENSITY POLYETHYLENE AND ALUMINUM." Azerbaijan Chemical Journal, no. 2 (June 2, 2022): 40–46. http://dx.doi.org/10.32737/0005-2531-2022-2-40-46.

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The paper considers the fundamental principles of the study of the rheological features of the melt flow of the initial high-density polyethylene and its filled compositions with aluminum powder, depending on the filler concentration, temperature and shear rate. To improve the compatibility of metal-polymer systems, a compatibilizer has been used, which is a graft copolymer of high-density polyethylene containing 5.6 wt. % maleic anhydride. The flow curves and the dependence of the effective viscosity on the shear rate of the initial high-density polyethylene and composites containing 0.5 wt. % and 5.0 wt. % aluminum powder has been determined. The regularity of the change in the effective viscosity of the melt on the temperature in Arrhenius coordinates has been established. Based on the curves obtained, the values of the activation energy of the viscous flow have been determined. A temperature-invariant characteristic of the composites viscosity properties has been drawn, which makes it possible to predict the change in the value of this indicator at high shear rates, close to their processing by extrusion and injection molding. The developed materials have been tested at the METAK LLC enterprise in Azerbaijan

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6

Huang, Ju-Sheng, I.-Chung Lee, and Biing-Jauh Lin. "Recovery of Heavy Metal from Scrap Metal Pickling Wastewater by Electrolysis." Water Science and Technology 28, no. 7 (October 1, 1993): 223–29. http://dx.doi.org/10.2166/wst.1993.0166.

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When the influent surface loading of copper ion in the four-stage continuous-flow reactors of electrolysis were controlled at 143.9, 94.0, 52.7 and 33.2 mg/min-dm2, respectively, and current density were controlled at 3.9, 2.6, 1.3 and 1.3A/dm2, respectively, the concentration of copper decreased from 13,900 to l,900mg/l (i.e., the electro-deposition rate of copper were 2,700, 2,240, 1,500 and 750 mg/dm2-h, respectively). The purity of copper depositing on the cathode reached over 98%. When the current density was ranged from 1.3 to 3.9A/dm2, the electro-deposition rate of copper increased with the increasing current density. However, when the current density was raised above 5.2 A/dm2, the electro-deposition rate of copper decreased with the increasing current density. The increase of current density decreased the current efficiency and increased the specific energy consumption. The increase of influent surface loading of copper ion increased the current efficiency and decreased the specific energy consumption.

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7

Aruga, Tetsuya. "Charge-density waves on metal surfaces." Journal of Physics: Condensed Matter 14, no. 35 (August 22, 2002): 8393–414. http://dx.doi.org/10.1088/0953-8984/14/35/310.

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8

Wilbur, Paul J., and Ronghua Wei. "High‐current‐density metal‐ion implantation." Review of Scientific Instruments 63, no. 4 (April 1992): 2491–93. http://dx.doi.org/10.1063/1.1142922.

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9

Söderlind, Per, O. Eriksson, J. Trygg, B. Johansson, and J. M. Wills. "Density-functional calculations for cerium metal." Physical Review B 51, no. 7 (February 15, 1995): 4618–21. http://dx.doi.org/10.1103/physrevb.51.4618.

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10

Johnson, Erin R., Ross M. Dickson, and Axel D. Becke. "Density functionals and transition-metal atoms." Journal of Chemical Physics 126, no. 18 (May 14, 2007): 184104. http://dx.doi.org/10.1063/1.2723118.

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11

Tan, L. Y., C. R. Lee, C. C. Wang, and Y. Wang. "Electron-density studies on metal trisdithiocarbamate and metal bisdithiocarbamate complexes." Acta Crystallographica Section A Foundations of Crystallography 52, a1 (August 8, 1996): C355. http://dx.doi.org/10.1107/s0108767396085303.

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12

Kang, Soo Cheol, Sang Kyung Lee, Seung Mo Kim, Hyeon Jun Hwang, and Byoung Hun Lee. "Quantitative defect density extraction method for metal–insulator–metal capacitor." Semiconductor Science and Technology 35, no. 11 (October 10, 2020): 115025. http://dx.doi.org/10.1088/1361-6641/abb8af.

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13

Lannon, John M., Chris Gregory, Matthew Lueck, Jason D. Reed, Charles A. Huffman, and Dorota Temple. "High Density Metal–Metal Interconnect Bonding for 3-D Integration." IEEE Transactions on Components, Packaging and Manufacturing Technology 2, no. 1 (January 2012): 71–78. http://dx.doi.org/10.1109/tcpmt.2011.2175922.

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14

Lang, N. D. "Density-functional studies of metal surfaces and metal-adsorbate systems." Surface Science 299-300 (January 1994): 284–97. http://dx.doi.org/10.1016/0039-6028(94)90661-0.

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15

Eisenhut, W., F. Huhn, and F. Strelow. "Study of the apparent density in 7 m industrial coke ovens." Revue de Métallurgie 86, no. 5 (May 1989): 387–92. http://dx.doi.org/10.1051/metal/198986050387.

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16

Maity, Ajanta, and Prasenjit Sen. "Density functional study of metal–phosphorene interfaces." International Journal of Modern Physics B 31, no. 11 (April 30, 2017): 1750077. http://dx.doi.org/10.1142/s0217979217500771.

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Properties of interfaces of a phosphorene monolayer with six different low-index metal surfaces are calculated using density functional methods. Pd(111), Pd(110), Pd(100), Ti(0001), Au(110) and Ni(110) surfaces have been considered as these metals have been used as electrodes in experimental studies of phosphorene-based field effect transistor (FET) devices. In order to understand the chemistry of metal–phosphorene bonding, adsorption of individual atoms of these four metals on a phosphorene monolayer has also been studied. In addition to structural and electronic properties, barriers for charge injection at these metal–phosphorene interfaces have been studied by calculating the Schottky and tunneling barrier heights. Ti appears to be the best choice for metal electrode in phosphorene devices.

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17

Hou, Yong, Guo-Hua Zhang, and Kuo-Chih Chou. "Study on the separation of silicon from refining slag of industrial silicon." Metallurgical Research & Technology 118, no. 4 (2021): 402. http://dx.doi.org/10.1051/metal/2021036.

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During the process of production and refining of industrial silicon, the discharged slag usually contains more than 15 mass% of metallic silicon. However, the separation of silicon from slag is very difficult due to the close density of silicon and slag as well as the high viscosity of slag, which results in the waste of resources. In the present work, the effect of Na2O addition on the separation of silicon from slag is investigated in detail. It is found that the optimum separation condition of slag and silicon is 1723 K reacting for 60 min by adding 10 mass% Na2O to the slag. Viscosity and density are two important factors affecting the separation effect of silicon from slag. The addition of Na2O reduces the viscosity of slag and promotes the separation of silicon from slag. Even if the addition of Na2O will decrease the density of slag which is detrimental to the separation of silicon, the density variation is not the determining factor affecting the separation relative to viscosity. The separation and extraction of metallic silicon from silicon slag is of great significance for improving utilization of resources and reducing environmental pollution.

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18

Mitrano, M., A. A. Husain, S. Vig, A. Kogar, M. S. Rak, S. I. Rubeck, J. Schmalian, et al. "Anomalous density fluctuations in a strange metal." Proceedings of the National Academy of Sciences 115, no. 21 (May 7, 2018): 5392–96. http://dx.doi.org/10.1073/pnas.1721495115.

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A central mystery in high-temperature superconductivity is the origin of the so-called strange metal (i.e., the anomalous conductor from which superconductivity emerges at low temperature). Measuring the dynamic charge response of the copper oxides, χ″(q,ω), would directly reveal the collective properties of the strange metal, but it has never been possible to measure this quantity with millielectronvolt resolution. Here, we present a measurement of χ″(q,ω) for a cuprate, optimally doped Bi2.1Sr1.9CaCu2O8+x (Tc = 91 K), using momentum-resolved inelastic electron scattering. In the medium energy range 0.1–2 eV relevant to the strange metal, the spectra are dominated by a featureless, temperature- and momentum-independent continuum persisting to the electronvolt energy scale. This continuum displays a simple power-law form, exhibiting q2 behavior at low energy and q2/ω2 behavior at high energy. Measurements of an overdoped crystal (Tc = 50 K) showed the emergence of a gap-like feature at low temperature, indicating deviation from power law form outside the strange-metal regime. Our study suggests the strange metal exhibits a new type of charge dynamics in which excitations are local to such a degree that space and time axes are decoupled.

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19

Subramaniam, Anand Bala, Mathieu Gonidec, Nathan D. Shapiro, Kayleigh M. Kresse, and George M. Whitesides. "Metal-Amplified Density Assays, (MADAs), including a Density-Linked Immunosorbent Assay (DeLISA)." Lab on a Chip 15, no. 4 (2015): 1009–22. http://dx.doi.org/10.1039/c4lc01161a.

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This paper reports a method of conducting quantitative and/or multiplexed assays, including immunoassays, by measuring metal-amplified changes in the density of protein-adsorbed beads using Magnetic Levitation (MagLev).

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20

Jung, Dong Hyun, Daejin Kim, Seung-Hoon Choi, Jaheon Kim, and Kihang Choi. "Density Functional Study on Metal Decoration onto a Metal-Organic Framework." Journal of the Korean Physical Society 52, no. 9(4) (April 15, 2008): 1221–26. http://dx.doi.org/10.3938/jkps.52.1221.

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21

Tong, G. S. M., and A. S. C. Cheung. "Density Functional Theory Study of Alkali Metal−Noble Metal Diatomic Molecules." Journal of Physical Chemistry A 106, no. 47 (November 2002): 11637–43. http://dx.doi.org/10.1021/jp026550w.

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22

Lin, Fei, Kechen Wu, Jiangang He, Rongjian Sa, Qiaohong Li, and Yongqin Wei. "Mixed-metal effects on ultra-incompressible metal diborides: Density functional computations." Chemical Physics Letters 494, no. 1-3 (July 2010): 31–36. http://dx.doi.org/10.1016/j.cplett.2010.05.067.

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23

Cheng, Hansong, David B. Reiser, Paul M. Mathias, and Sheldon Dean. "Role of transition metal oxides in metal dusting: Density functional study." AIChE Journal 44, no. 1 (January 1998): 188–96. http://dx.doi.org/10.1002/aic.690440120.

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24

Xiong, Li, Jin Hu, Zhao Yang, Xianglin Li, Hang Zhang, and Guanhua Zhang. "Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors." Molecules 27, no. 12 (June 20, 2022): 3951. http://dx.doi.org/10.3390/molecules27123951.

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This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al2O3-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm−2, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10−10 A·cm−2, and quadratic voltage coefficient of 303.6 ppm·V−2. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm−2 and 0.25 fF·µm−2. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.

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25

Xie, Feng, Guo Feng Yang, Jun Wang, Guo Sheng Wang, Man Song, Tang Lin Wang, Hao Ran Wu, and Jin Guo. "Metal-Semiconductor-Metal Ultraviolet Photodiodes Fabricated on Bulk GaN Substrate." Advanced Materials Research 986-987 (July 2014): 160–63. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.160.

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We report the demonstration of a GaN-based planar metal-semiconductor-metal (MSM) ultraviolet photodetector (PD). The MSM PD with semitransparent interdigitated Schottky electrodes is fabricated on low-defect-density GaN homoepitaxial layer grown on bulk GaN substrate by metal-organic chemical vapor deposition. The dislocation density of the GaN homo-epilayer characterized by cathodoluminescence mapping technique is ~5×106 cm−2. The PD exhibits a low dark current density of ~4.1×10−10 A/cm2 and a high UV-to-visible rejection ratio up to 5 orders of magnitude at room temperature under 10 V bias. Even at a high temperature of 425 K, the dark current of the PD at 10 V is still <1×10−9 A/cm2 with a reasonable UV-to-visible rejection ratio more than 3×104, indicating that such kind of PDs are suitable for high temperature operation.

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26

Liu, Bao, Jiangtao Chen, Bingjun Yang, Zifeng Lin, Chuanfang (John) Zhang, Zhenhua Zeng, Mingyang Jiao, et al. "An ultrahigh-energy-density lithium metal capacitor." Energy Storage Materials 42 (November 2021): 154–63. http://dx.doi.org/10.1016/j.ensm.2021.07.034.

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27

Lee, C. R., C. C. Wang, G. H. Lee, and Y. Wang. "Electron-density studies of metal squarate complexes." Acta Crystallographica Section A Foundations of Crystallography 52, a1 (August 8, 1996): C345. http://dx.doi.org/10.1107/s0108767396085728.

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28

Su, Z., P. Coppens, N. Ishizawa, N. Holzwarth, and Y. Zeng. "Charge-density studies of transition metal sulfides." Acta Crystallographica Section A Foundations of Crystallography 52, a1 (August 8, 1996): C344. http://dx.doi.org/10.1107/s0108767396085741.

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29

LIU, Y. S. "Laser Metal Deposition for High-Density Interconnect." Optics and Photonics News 3, no. 6 (June 1, 1992): 10. http://dx.doi.org/10.1364/opn.3.6.000010.

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30

Rigo, A., M. Casas, A. Plastino, and Ll Serra. "Approximate density matrices for spherical metal clusters." Physical Review B 60, no. 3 (July 15, 1999): 2117–21. http://dx.doi.org/10.1103/physrevb.60.2117.

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31

Nishibori, Eiji, and Hidetaka Kasai. "High-resolution charge density of metal hexaborides." Acta Crystallographica Section A Foundations and Advances 73, a2 (December 1, 2017): C1389. http://dx.doi.org/10.1107/s2053273317081876.

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32

Silkin, V. M., I. A. Nechaev, E. V. Chulkov, and P. M. Echenique. "Induced charge-density oscillations at metal surfaces." Surface Science 588, no. 1-3 (August 2005): L239—L245. http://dx.doi.org/10.1016/j.susc.2005.05.030.

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33

Szpunar, Barbara, and Jerzy Szpunar. "Density functional studies of selected metal dioxides." Journal of Physics and Chemistry of Solids 74, no. 11 (November 2013): 1632–39. http://dx.doi.org/10.1016/j.jpcs.2013.06.007.

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34

Zhijian, Wu. "Density functional study of 3d-metal monoborides." Journal of Molecular Structure: THEOCHEM 728, no. 1-3 (September 2005): 167–72. http://dx.doi.org/10.1016/j.theochem.2005.05.014.

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35

Gorges, E., L. M. Raez, A. Schillings, and I. Egry. "Density measurements on levitated liquid metal droplets." International Journal of Thermophysics 17, no. 5 (September 1996): 1163–72. http://dx.doi.org/10.1007/bf01442003.

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36

Bernstein, J. B., T. M. Ventura, and A. I. Radomski. "High-density laser linking of metal interconnect." IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 17, no. 4 (1994): 590–93. http://dx.doi.org/10.1109/95.335046.

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37

Salem, R. R. "Electron density at the metal-liquid interface." Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 245, no. 1-2 (April 1988): 307–12. http://dx.doi.org/10.1016/0022-0728(88)80078-0.

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38

Ruiz, Eliseo, Jordi Cirera, and Santiago Alvarez. "Spin density distribution in transition metal complexes." Coordination Chemistry Reviews 249, no. 23 (December 2005): 2649–60. http://dx.doi.org/10.1016/j.ccr.2005.04.010.

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39

Tsirelson, V. G., V. A. Streltsov, R. P. Ozerov, and K. Yvon. "Electron density distribution in 3d-metal sesquioxides." Physica Status Solidi (a) 115, no. 2 (October 16, 1989): 515–21. http://dx.doi.org/10.1002/pssa.2211150219.

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40

Ossicini, Stefano, Fabio Finocchi, and C. M. Bertoni. "Electron density profiles at charged metal surfaces in the weighted density approximation." Surface Science 189-190 (October 1987): 776–81. http://dx.doi.org/10.1016/s0039-6028(87)80513-7.

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41

Ossicini, Stefano, Fabio Finocchi, and C. M. Bertoni. "Electron density profiles at charged metal surfaces in the weighted density approximation." Surface Science Letters 189-190 (October 1987): A440. http://dx.doi.org/10.1016/0167-2584(87)90524-x.

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42

Bianchi, Riccardo, Giuliana Gervasio, and Domenica Marabello. "Experimental Electron Density Analysis of Mn2(CO)10: Metal−Metal and Metal−Ligand Bond Characterization." Inorganic Chemistry 39, no. 11 (May 2000): 2360–66. http://dx.doi.org/10.1021/ic991316e.

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43

Szeliga, Danuta, Natalia Czyżewska, Konrad Klimczak, Jan Kusiak, Paweł Morkisz, Piotr Oprocha, Maciej Pietrzyk, and Paweł Przybyłowicz. "Sensitivity analysis, identification and validation of the dislocation density-based model for metallic materials." Metallurgical Research & Technology 118, no. 3 (2021): 317. http://dx.doi.org/10.1051/metal/2021037.

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Microstructure evolution model based on the differential equation describing evolution of dislocations was proposed. Sensitivity analysis was performed and parameters with the strongest influence on the output of the model were revealed. Identification of the model coefficients was performed for various metallic materials using inverse analysis for experimental data. The model was implemented in the finite element code and simulations of various hot forming processes were performed.

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44

Xu, Lin, Qunwu Pei, Zefeng Han, Engang Wang, Jianyu Wang, and Christian Karcher. "Modeling study of EMBr effects on molten steel flow, heat transfer and solidification in a continuous casting mold." Metallurgical Research & Technology 120, no. 2 (2023): 218. http://dx.doi.org/10.1051/metal/2023016.

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During continuous casting process, the internal molten steel flow pattern of the mold is one of the important factors affecting the quality of slab products. The application of electromagnetic braking (EMBr) technology in the slab caster provides an effective solution to improve the molten steel flow pattern in the mold. In the current research, one of the commonly used EMBr technology is studied, namely the Ruler-EMBr technology. In detail, the effect of magnetic flux density on the behavior of the molten steel jet flow, heat transfer, and solidification in a 1450 mm × 230 mm slab mold is numerically simulated through a Reynolds-averaged Navier-Stokes (RANS) turbulence model together with an enthalpy-porosity approach. The simulation results indicate that the electromagnetic force generated by the Ruler-EMBr can significantly suppress the diffusion of the impinging jet to the narrow face of the mold with the increase of magnetic flux density. By that, the impact of the upward backflow on the meniscus region in the mold is suppressed. Correspondingly, the uniformity of the temperature distribution in the mold is effectively improved. The parametric studies suggest that the optimized magnetic flux density is 0.3 T to ensure the improvement of steel quality with a casting speed of 1.6 m/min. By applying the magnetic flux density of 0.3 T, the Ruler-EMBr has a better capability to reduce the maximum amplitude of the surface velocity by 24.5% and increase the average surface temperature of the molten steel by 0.25% when compared to the case of No-EMBr. With this electromagnetic parameter, the Ruler-EMBr technology can well prevent the mold flux entrapment and promote solidified shell uniform growth along the casting direction.

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45

XIONG, RUI, QINGMING XIAO, JING SHI, HAILIN LIU, WUFENG TANG, DECHENG TIAN, and MINGLIANG TIAN. "CHARGE DENSITY WAVE INSTABILITY IN TlMo6O17." Modern Physics Letters B 14, no. 10 (April 30, 2000): 345–54. http://dx.doi.org/10.1142/s0217984900000483.

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The charge density wave instability in the quasi-two-dimensional conductor thallium purple molybdenum bronze TlMo 6 O 17 was carefully examined by studying the temperature dependence of resistivity, thermoelectric power (TEP) behavior and magnetic susceptibility. A metal-to-metal transition was confirmed near 110 K in TlMo 6 O 17 due to the partial opening of a gap at the Fermi surface and the driving of charge density wave.

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46

Darweesh, Ahmad A., Stephen J. Bauman, David A. French, Ahmad Nusir, Omar Manasreh, and Joseph B. Herzog. "Current Density Contribution to Plasmonic Enhancement Effects in Metal–Semiconductor–Metal Photodetectors." Journal of Lightwave Technology 36, no. 12 (June 15, 2018): 2430–34. http://dx.doi.org/10.1109/jlt.2018.2811749.

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47

Yin, You, Hayato Sone, and Sumio Hosaka. "Memory Effect in Metal–Chalcogenide–Metal Structures for Ultrahigh-Density Nonvolatile Memories." Japanese Journal of Applied Physics 45, no. 6A (June 8, 2006): 4951–54. http://dx.doi.org/10.1143/jjap.45.4951.

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48

Santana, Juan A., and Notker Rösch. "Metal-Supported Metal Clusters: A Density Functional Study of Pt3 and Pd3." Journal of Physical Chemistry C 116, no. 18 (May 2012): 10057–63. http://dx.doi.org/10.1021/jp301227e.

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49

Sierraalta, Anibal. "Electronic density topology of metal—metal quadruple bond in some Mo complexes." Chemical Physics Letters 227, no. 6 (September 1994): 557–60. http://dx.doi.org/10.1016/0009-2614(94)00881-7.

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50

Sadykov, Vladislav, Natalia Mezentseva, Vladimir Usoltsev, Oleg Smorygo, Vitali Mikutski, Alexander Marukovich, Oleg Bobrenok, and Nikolai Uvarov. "Metal Supported SOFC on the Gradient Permeable Metal Foam Substrate." Advanced Materials Research 123-125 (August 2010): 1083–86. http://dx.doi.org/10.4028/www.scientific.net/amr.123-125.1083.

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Abstract:

Gradient permeable metallic substrate material consisting of two layers of NiAl alloy was developed for the SOFC design. The open-cell foam layer (thickness 1-2 mm, cell density 60 ppi) provides the structure robustness, while a thin (100-200 μm) mesoporous layer facilitates supporting functional layers. Cathode layers (LSM, LSFN and their nanocomposites with GDC or YSZ) and anode layers (NiO/YSZ, NiO/YSZ +Ru/Ln-Sr-Mn-Cr-O nanocomposite catalyst) were deposited by slip casting, electrophoretic deposition or air brushing. Thin (5-10 μm) YSZ layer was deposited by MO CVD. Power density up to 550 mW/cm2 at 700oC was obtained on button-size cells using wet H2-air feeds.

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