Books on the topic 'Metal defects'

Steger, Michael. Transition-Metal Defects in Silicon. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-35079-5.

Atlas of enamel defects. 3rd ed. Astwood Bank, Redditch, England: Instute of Vitreous Enamellers, 1995.

M, Omelʹi͡anovskiĭ Ė. Transition metal impurities in semiconductors. Bristol: A. Hilger, 1986.

Omelʹi͡anovsʹkyĭ, M. E. Transition metal impurities in semiconductors. Bristol: Hilger, 1986.

Graff, Klaus. Metal impurities in silicon device fabrication. Berlin: Springer-Verlag, 1995.

Murakami, Y. Metal fatigue: Effects of small defects and nonmetallic inclusions. Oxford: Elsevier, 2002.

Graff, Klaus. Metal impurities in silicon-device fabrication. Berlin: Springer-Verlag, 1995.

M, Predeleanu, ed. Computational methods for predicting material processing defects. Amsterdam: Elsevier, 1987.

V, Trushin I͡U. Theory of radiation processes in metal solid solutions. Commack, N.Y: Nova Science Publishers, 1995.

Teplofizicheskie svoĭstva metallov s defektami kristallicheskoĭ reshetki pri nizkikh temperaturakh. Kharʹkov: "Osnova", 1990.

Kikoin, K. A. Transition metal impurities in semiconductors: Electronic structure and physical properties. Singapore: World Scientific, 1994.

International Conference on Computational Methods for Predicting Material Processing Defects (1987 Cachan, France). Computational methods for predicting material processing defects: Proceedings of the International Conference on Computational Methods for Predicting Material Processing Defects, September 8-11, 1987, Cachan, France. Amsterdam: Elsevier, 1987.

Fleetwood, Daniel. Defects in microelectronic materials and devices. Boca Raton, FL: CRC Press, 2008.

Smirnov, A. A. Teorii͡a︡ vakansiĭ v metallakh i splavakh i ee primenenie k splavam vychitanii͡a︡. Kiev: Nauk. dumka, 1993.

Zhernov, A. P. Metally s nemagnitnymi primesnymi atomami. Moskva: Ėnergoatomizdat, 1992.

I, Manokhin A., ed. Teorii͡a︡ neravnovesnoĭ kristallizat͡s︡ii ploskogo slitka. Moskva: "Nauka", 1992.

Ermakov, S. S. Fizika metallov i defekty kristallicheskogo stroenii͡a︡: Uchebnoe posobie. Leningrad: Izd-vo Leningradskogo universiteta, 1989.

Howard, Sean. Multiple-scattering X [alpha] calculations on transition metal defects in ionic solids. Birmingham: University of Birmingham, 1990.

Ehrenfried, Zschech, ed. Stress-induced phenomena in metallization: Eighth International Workshop on Stress-Induced Phenomena in Metallization, Dresden, Germany, 12-14 September 2005. Melville, N.Y: American Institute of Physics, 2006.

Ollikainen, Mikael. Origins of production errors and significance of employee empowerment in reducing production error amount in sheet metal fabricating industry. Lappeenranta: Lappeenranta University of Technology, 2003.

Voldman, Steven H. Latchup. Chichester, West Sussex, England: John Wiley, 2007.

Shorshorov, Minas Khachaturovich. Ulʹtradispersnoe strukturnoe sostoi︠a︡nie metallicheskikh splavov. Moskva: Nauka, 2001.

1939-, Doherty R. D., and Cantor B, eds. Stability of microstructure in metallic systems. 2nd ed. Cambridge: Cambridge University Press, 1997.

From coherent tunneling to relaxation: Dissipative quantum dynamics of interacting defects. Berlin: Springer, 1997.

Steger, Michael. Transition-Metal Defects in Silicon: New Insights from Photoluminescence Studies of Highly Enriched 28Si. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

Barney, Craig. Fatigue crack growth from unbridged defects in continuous fibre reinforced titanium metal matrix composites. Birmingham: University of Birmingham, 1995.

Latchup in CMOS technology: The problem and its cure. Boston: Kluwer Academic Publishers, 1986.

Ikonen, Kirsi. Metal surface and subsurface inspection using nondestructive optical methods. Lappeenranta, Finland: Lappeenranta University of Technology, 2002.

A, Radzhabov E., and Nepomni͡a︡shchikh A. I, eds. Spektroskopii͡a︡ kislorodnykh i vodorodnykh primesnykh t͡s︡entrov v shchelchno-galoidnykh kristallakh. Novosibirsk: "Nauka," Sibirskoe otd-nie, 1992.

Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. Hauppauge, N.Y: Nova Science Publishers, 2009.

Sheng-Fu, Hsu, ed. Transient-induced latchup in CMOS integrated circuits. Singapore: Wiley, 2009.

Evangelos, Manias, Malliaras George G, and Symposium A, "Defect Mediated Phenomena in Ordered Polymers" (2002 : Boston, Mass.), eds. Polymer/metal interfaces and defect mediated phenomena in ordered polymers: Symposia held December 2-6, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2003.

Dreyhsig, Jörg. The multiplet problem of 3d transition metal impurities in semiconductors: General aspects and the specific properties of semiconductors doped with cobalt. Berlin: W & T Verlag, 1994.

Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. New York: Nova Science Publishers, 2010.

Defect oriented testing for CMOS analog and digital circuits. Boston: Kluwer Academic, 1998.

IEEE International Workshop on Defect Based Testing (2004 Napa, Calif.). DBT 2004: 2004 IEEE International Workshop on Current & Defect Based Testing : proceedings : April 25, 2004, Napa Valley Marriott, Napa Valley, CA, USA. Piscataway, N.J: IEEE, 2004.

Cheung, Kin P. Plasma charging damage. London: Springer, 2001.

Inman, Matthew. A study of first and second row transition metal defects in oxide and fluoride crystal hosts using the MSX[alpha] method. Birmingham: University of Birmingham, 1995.

International, Workshop on Stress-Induced Phenomena in Metallization (10th 2008 Austin Texas). Stress-induced phenomena in metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5-7 November 2008. Melville, N.Y: American Institute of Physics, 2009.

International, Workshop on Stress-Induced Phenomena in Metallization (9th 2007 Kyoto Japan). Stress-induced phenomena in metallization: Ninth International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan 4 - 6 April 2007. Melville, N.Y: American Institute of Physics, 2007.

International Workshop on Stress-Induced Phenomena in Metallization (11th 2010 Bad Schandau, Germany). Stress-induced phenomena in metallization: Eleventh International Workshop on Stress-Induced Phenomena in Metallization, Bad Schandau, Germany, 12-14 April 2010. Edited by Zschech Ehrenfried, Ho P. S, and Ogawa Shinʼichi. Melville, N.Y: American Institute of Physics, 2010.

International Workshop on Stress-Induced Phenomena in Metallization (10th 2008 Austin, Texas). Stress-induced phenomena in metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5-7 November 2008. Edited by Ho P. S, Ogawa Shinichi Dr, and Zschech Ehrenfried. Melville, N.Y: American Institute of Physics, 2009.

Dammann, Michael. Defects in silicon induced by high temperature treatment and their influence on MOS-devices: A thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences. Zurich: Physical Electronics Laboratory, Swiss Federal Institute of Technology, 1994.

Fleming, Arnold E. G. The use of collagen during wound healing of surgically-created periodontal defects in dogs and following implantation of porous-coated metal implants in rats. [Toronto]: Faculty of Dentistry, University of Toronto, 1985.

Ullmaier, H., ed. Atomic Defects in Metals. Berlin/Heidelberg: Springer-Verlag, 1991. http://dx.doi.org/10.1007/b37800.

IEEE International Workshop on Defect Based Testing (2000 Montréal, Québec). 2000 IEEE International Workshop on Defect Based Testing: April 30, 2000, Montreal, Canada : proceedings. Los Alamitos, Calif: IEEE Computer Society, 2000.

Hirsch, P. B. The physics of metals 2 defects. Cambridge: Cambridge University Press, 2009.

Schüle, W. About properties of point defects in metals. Luxembourg: Commission of the European Communities, 1986.

Gravelle, Karen. Understanding birth defects. New York: Franklin Watts, 1990.

Leblebici, Yusuf. Hot-carrier reliability of MOS VLSI circuits. Boston: Kluwer Academic, 1993.