Relevant bibliographies by topics / Metal chemical etching

Academic literature on the topic 'Metal chemical etching'

Author: Grafiati
Published: 30 May 2022
Last updated: 31 May 2022

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Journal articles on the topic "Metal chemical etching"

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Kim, D. E., and N. P. Suh. "Chemical Smoothing of Rough Metal Surfaces." Journal of Engineering for Industry 114, no. 4 (November 1, 1992): 421–26. http://dx.doi.org/10.1115/1.2900693.

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A chemical etching method is investigated as a possible approach to smoothing metal surfaces automatically. In a chemical etching process metal is removed due to chemical reaction and the dissolved species are transported away from the surface mainly by diffusion. Controlled dynamics introduced to the etchant motion provide the conditions necessary to perform preferential material removal such that an irregular surface is smoothed. A simplified model for the smoothing process based on fundamental mass transfer understandings is presented. Experimental results of smoothing electric discharge machined 440 stainless steel specimens are also presented. This work is motivated by the need to develop a cost effective way to manufacture molds during secondary processing.
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Wang, Qi, Kehong Zhou, Shuai Zhao, Wen Yang, Hongsheng Zhang, Wensheng Yan, Yi Huang, and Guodong Yuan. "Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array." Nanomaterials 11, no. 12 (November 24, 2021): 3179. http://dx.doi.org/10.3390/nano11123179.

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Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.
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Li, Liyi, Colin M. Holmes, Jinho Hah, Owen J. Hildreth, and Ching P. Wong. "Uniform Metal-assisted Chemical Etching and the Stability of Catalysts." MRS Proceedings 1801 (2015): 1–8. http://dx.doi.org/10.1557/opl.2015.574.

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ABSTRACTRecently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 μm-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.
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Dai, Li Ping, Guo Jun Zhang, Shu Ya Wang, and Zhi Qin Zhong. "XPS Study on Barium Strontium Titanate (BST) Thin Films Etching in SF6/Ar Plasma." Advanced Materials Research 415-417 (December 2011): 1964–68. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1964.

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Subscript textReactive ion etching of barium strontium titanate (BST) thin films using an SF6/Ar plasma has been studied. BST surfaces before and after etching were analyzed by X-ray photoelectron spectroscopy to investigate the reaction ion etching mechanism, and chemical reactions had occurred between the F plasma and the Ba, Sr and Ti metal species. Fluorides of these metals were formed and some remained on the surface during the etching process. Ti can be removed completely by chemical reaction because the TiF4by-product is volatile. Minor quantities of Ti-F could still be detected by narrow scan X-ray photoelectron spectra, which was thought to be present in metal-oxy-fluoride(Metal-O-F). These species were investigated from O1sspectra, and a fluoride-rich surface was formed during etching because the high boiling point BaF2and SrF2residues are hard to remove. The etching rate was limited to 14.28nm/min. A 1-minute Ar/10 plasma physical sputtering was carried out for every 4 minutes of surface etching, which effectively removed remaining surface residue. Sequential chemical reaction and sputtered etching is an effective etching method for BST films.
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Choi, Keorock, Yunwon Song, Ilwhan Oh, and Jungwoo Oh. "Catalyst feature independent metal-assisted chemical etching of silicon." RSC Advances 5, no. 93 (2015): 76128–32. http://dx.doi.org/10.1039/c5ra15745e.

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Lee, Hun Hee, Min Sang Yun, Hyun Wook Lee, and Jin Goo Park. "Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study." Solid State Phenomena 195 (December 2012): 128–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.128.

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As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.
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Tice, Scott, and Chan Geun Park. "Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation." Solid State Phenomena 219 (September 2014): 138–42. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.138.

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In semiconductor wafer fabrication, etching refers to the process of removing unwanted material from wafer surface through a subtractive process. Metal etching is most commonly used in the patterning of metal films for interconnects by establishing specific connection and conduction paths and can be classified by dry etching, de-plating and dissolution of the layers on various substrates such as silicon, SiO2, Si3N4, GaAs, germanium, and sapphire. Dry etching is used to produce very precise etching of vertical channels or vias forming the device features or lines which make up the conductive path because it is anisotropic or etching in one direction. Dry etching is achieved by using chemical gases and plasma in a process chamber so dry etching tools are very large, complex and expensive to purchase and operate. De-plating is a process of electro-chemically removing metal material from the surface of the wafer to an anode by creating a difference in electrical potential between the surface to be etched/de-plated (typically cathode) and the “target” or anode where the material is to be collected. De-plating in single wafer tools has also replaced immersion processing due to the better uniformity it provides. However, De-plating single wafer tools are also very large and expensive to operate and have low throughput (wafers per hour). Dissolution/Immersion is the used of recirculated chemical baths to perform the etching process. In an immersion bath chemical is used to dissolve the metal layer that is unprotected by the mask. Immersion metal etch process has been on the decline because of its isotropic etching property and poor etch uniformity caused by non-uniform chemical flow around wafers in the tank. For the most of etch processes lateral etching is undesired because it occurs on the walls of the features and makes them thinner or misshapen. As a result, most of critical etching steps are performed by dry etching systems. However, if etch uniformity is precise, immersion etching can be used for less critical features in place of complex dry etching and de-plating.
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Kim, Wungyeon, Hyunjeong Kim, and Gyu Tae Kim. "Ultra-Easy and Fast Method for Transferring Graphene Grown on Metal Foil." Nano 12, no. 11 (November 2017): 1750140. http://dx.doi.org/10.1142/s1793292017501405.

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Growing graphene on a large scale is the first step towards its industrial application. The most widely used large-scale graphene growth method is chemical vapor deposition (CVD) on metal foil. Transferring large-scale graphene without damaging it or degrading its performance is also very important. Generally, techniques for transferring CVD-grown graphene involve metal-foil etching. In this case, the metal etchant can chemically alter the graphene and small amounts of metal residue still remain after etching. These metal residues change the properties of the transferred graphene. In this paper, we demonstrate a new technique for transferring CVD-grown graphene films onto arbitrary substrates using Crystalbond, an off-the-shelf adhesive material. This new method is very simple, easy, and fast. It also solves the aforementioned problems associated with metal etching, by using mechanical exfoliation of graphene via the high adhesive strength of Crystalbond. We transferred a [Formula: see text]1[Formula: see text]cm size piece of graphene, which exhibited reasonable optical and electrical properties, as observed using Raman spectroscopy and field effect transistor (FET) measurements, respectively.
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Lova, Paola, Valentina Robbiano, Franco Cacialli, Davide Comoretto, and Cesare Soci. "Black GaAs by Metal-Assisted Chemical Etching." ACS Applied Materials & Interfaces 10, no. 39 (September 7, 2018): 33434–40. http://dx.doi.org/10.1021/acsami.8b10370.

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Pérez-Díaz, Oscar, and Enrique Quiroga-González. "Silicon Conical Structures by Metal Assisted Chemical Etching." Micromachines 11, no. 4 (April 11, 2020): 402. http://dx.doi.org/10.3390/mi11040402.

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A simple and inexpensive method to obtain Si conical structures is proposed. The method consists of a sequence of steps that include photolithography and metal assisted chemical etching (MACE) to create porous regions that are dissolved in a post-etching process. The proposed process takes advantage of the lateral etching obtained when using catalyst particles smaller than 40 nm for MACE. The final shape of the base of the structures is mainly given by the shape of the lithography mask used for the process. Conical structures ranging from units to hundreds of microns can be produced by this method. The advantage of the method is its simplicity, allowing the production of the structures in a basic chemical lab.
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Dissertations / Theses on the topic "Metal chemical etching"

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Hildreth, Owen James. "Development of metal-assisted chemical etching as a 3D nanofabrication platform." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/49011.

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The considerable interest in nanomaterials and nanotechnology over the last decade is attributed to Industry's desire for lower cost, more sophisticated devices and the opportunity that nanotechnology presents for scientists to explore the fundamental properties of nature at near atomic levels. In pursuit of these goals, researchers around the world have worked to both perfect existing technologies and also develop new nano-fabrication methods; however, no technique exists that is capable of producing complex, 2D and 3D nano-sized features of arbitrary shape, with smooth walls, and at low cost. This in part is due to two important limitations of current nanofabrication methods. First, 3D geometry is difficult if not impossible to fabricate, often requiring multiple lithography steps that are both expensive and do not scale well to industrial level fabrication requirements. Second, as feature sizes shrink into the nano-domain, it becomes increasingly difficult to accurately maintain those features over large depths and heights. The ability to produce these structures affordably and with high precision is critically important to a number of existing and emerging technologies such as metamaterials, nano-fluidics, nano-imprint lithography, and more. Summary To overcome these limitations, this study developed a novel and efficient method to etch complex 2D and 3D geometry in silicon with controllable sub-micron to nano-sized features with aspect ratios in excess of 500:1. This study utilized Metal-assisted Chemical Etching (MaCE) of silicon in conjunction with shape-controlled catalysts to fabricate structures such as 3D cycloids, spirals, sloping channels, and out-of-plane rotational structures. This study focused on taking MaCE from a method to fabricate small pores and silicon nanowires using metal catalyst nanoparticles and discontinuous thin films, to a powerful etching technology that utilizes shaped catalysts to fabricate complex, 3D geometry using a single lithography/etch cycle. The effect of catalyst geometry, etchant composition, and external pinning structures was examined to establish how etching path can be controlled through catalyst shape. The ability to control the rotation angle for out-of-plane rotational structures was established to show a linear dependence on catalyst arm length and an inverse relationship with arm width. A plastic deformation model of these structures established a minimum pressure gradient across the catalyst of 0.4 - 0.6 MPa. To establish the cause of catalyst motion in MaCE, the pressure gradient data was combined with force-displacement curves and results from specialized EBL patterns to show that DVLO encompassed forces are the most likely cause of catalyst motion. Lastly, MaCE fabricated templates were combined with electroless deposition of Pd to demonstrate the bottom-up filling of MaCE with sub-20 nm feature resolution. These structures were also used to establish the relationship between rotation angle of spiraling star-shaped catalysts and their center core diameter. Summary In summary, a new method to fabricate 3D nanostructures by top-down etching and bottom-up filling was established along with control over etching path, rotation angle, and etch depth. Out-of-plane rotational catalysts were designed and a new model for catalyst motion proposed. This research is expected to further the advancement of MaCE as platform for 3D nanofabrication with potential applications in thru-silicon-vias, photonics, nano-imprint lithography, and more.
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Anokhina, Ksenia. "Investigation of Metal-assisted Si Etching for Fabrication of Nanoimprint Lithography Stamps." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-14459.

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This diploma thesis deals with the investigation of the metal-assisted catalytic etching (MaCE) of Si. One of the main goals is to study fabrication of stamps for nanoimprint lithography using MaCE. Formation of nanoporous silicon (PSi), Si nanowires (SiNWs) and three-dimensional nanostructures in Si by MaCE is demonstrated. For this purpose optical lithography, electron beam lithography (EBL), shadow mask evaporation and aerosol nanoparticles deposition techniques have been utilized. The etching rate and surface morphology of Si (with Au lift-off films as a catalyst) as functions of time and concentrations of chemicals are measured in the current diploma work using optical microscope and scanning electron microscopy (SEM). In the current thesis it is shown that Si structures with sub-150 nm lateral sizes, high aspect ratio (up to 1:21), well-defined shapes, and various complexity can easily be fabricated by means of MaCE process.
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Ngqoloda, Siphelo. "Vertically aligned silicon nanowires synthesised by metal assisted chemical etching for photovoltaic applications." University of the Western Cape, 2015. http://hdl.handle.net/11394/4872.

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>Magister Scientiae - MSc
One-dimensional silicon nanowires (SiNWs) are promising building blocks for solar cells as they provide a controlled, vectorial transport route for photo-generated charge carriers in the device as well as providing anti-reflection for incoming light. Two major approaches are followed to synthesise SiNWs, namely the bottom-up approach during vapour-liquid-solid mechanism which employs chemical vapour deposition techniques. The other method is the top-down approach via metal assisted chemical etching (MaCE). MaCE provides a simple, inexpensive and repeatable process that yields radially and vertically aligned SiNWs in which the structure is easily controlled by changing the etching time or chemical concentrations. During MaCE synthesis, a crystalline silicon (c-Si) substrate covered with metal nanoparticles (catalyst) is etched in a diluted hydrofluoric acid solution containing oxidising agents. Since the first report on SiNWs synthesised via MaCE, various publications have described the growth during the MaCE process. However lingering questions around the role of the catalyst during formation, dispersion and the eventual diameter of the nanowires remain. In addition, very little information pertaining to the changes in crystallinity and atomic bonding properties of the nanowires post synthesis is known. As such, this study investigates the evolution of vertical SiNWs from deposited silver nanoparticles by means of in-depth electron microscopy analyses. Changes in crystallinity during synthesis of the nanowires are probed using x-ray diffraction (XRD) and transmission electron microscopy (TEM). Deviations in the optical properties are quantified using optical reflectivity measurements by employing ultraviolet-visible (UV-Vis) spectroscopy, whereas the bonding configurations of the nanowires are probed by Raman and Fourier transforms infrared spectroscopy. Diameters of 50 – 200 nm vertical SiNWs were obtained from scanning electron micrographs and nanowires lengths linearly increased with etching time duration from about 130 nm after 30 seconds to over 15 μm after 80 minutes. No diameter modulations along nanowires axial direction and rough nanowires apexes were observed for nanowires obtained at longer etching times. These SiNWs remained crystalline as their bulk single crystalline Si wafers but had a thin amorphous layer on the surface, findings confirmed by TEM, XRD and Raman analysis. Nanowires were found to be partially passivated with oxygen with small traces of hydrogen termination, confirmed with infrared absorption studies. Finally, low optical reflection of less than 10% over visible range compared to an average of 30% for bulk Si were measured depicting an antireflective ability required in silicon solar cells.
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Khanyile, Sfiso Zwelisha. "Silicon nanowires by metal-assisted chemical etching and its incorporation into hybrid solar cells." University of Western Cape, 2021. http://hdl.handle.net/11394/8340.

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Philosophiae Doctor - PhD
The rapid increase in global energy demand in recent decades coupled with the adverse environmental impact of conventional fuels has led to a high demand for alternative energy sources that are sustainable and efficient. Renewable solar energy technologies have received huge attention in recent decades with the aim of producing highly efficient, safe, flexible and robust solar cells to withstand harsh weather conditions. c-Si has been the material of choice in the development of conventional inorganic solar cells owing to it superior properties, abundance and higher efficiencies. However, the associated high costs of Si processing for solar cells have led to a gravitation towards alternative organic solar cells which are cheaper and easy to process even though they suffer from stability and durability challenges. In this work, combination of both inorganic and organic materials to form hybrid solar cells is one of the approaches adopted in order to address the challenges faced by solar cell development.
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Zheng, Wen Ph D. Massachusetts Institute of Technology. "Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104114.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2016.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 170-177).
Capacitors with high capacitance density (capacitance per footprint area) have potential applications in autonomous microsystems that harvest energy from the environment, as they can store and release energy at high rates. Use of high surface-to-volume ratio structures has been demonstrated as an effective way to increase the electrode area, and therefore to improve the capacitance density, while still keeping the footprint area low. The goal of this thesis was to first develop an understanding of the mechanisms of metal assisted wet chemical etching for fabrication of arrays of silicon nanowires, and then use this understanding to build nanowire array on-chip capacitors in silicon substrates, in order to eliminate additional packaging and enable local and efficient energy delivery. Two types of capacitors were investigated: electrostatic metal-oxide-semiconductor (MOS) capacitors for power management, and supercapacitors for energy storage purposes. For both types of devices, enlarged surface area per footprint was achieved by utilizing the arrays of silicon nanowires. Fundamental studies of the roles of metals in metal-assisted chemical etching (MACE) of silicon were conducted. Lithography techniques were used to generate patterns in metal films which when subjected to MACE resulted in formation of ordered arrays of silicon nanowires. Investigation of various metal catalysts showed that Pt is a more active catalyst than Au, while Cu is not stable in the etchant. Tapered silicon nanowires can be generated by adding a layer of Cu between two Au layers, and etching occurs much faster than when a pure Au catalyst is used. While carrying out research on the mechanisms of MACE, we developed a new electrochemical method for formation of arrays of silicon nanowires, metal-assisted anodic etching (MAAE). In this process, the etchant consists of HF alone, and does not include an oxidant. In both processes, HF is used as an etchant. However, in MACE, electronic holes are supplied through reduction of an oxidant (e.g. H₂O₂), while in MAAE, electronic holes are supplied through an external circuit, with anodic contact to either the metal or the silicon. In both contact cases for MAAE, the metal catalyzes the etching process and leads to controlled formation of silicon nanowires, without the need for an oxidant. This discovery, and its analysis, provided new insights into the mechanisms of both MAAE and MACE, and also opened the possibility for use of metal catalyzed electrochemical etching of other materials that cannot survive the HF/oxidant mixture. Processes for fabrication of on-chip capacitors based on silicon nanowires were next developed. We first fabricated on-chip MOS capacitors with nanowire arrays etched using MACE with both single crystal silicon substrates and polycrystalline silicon films. For wires made in both cases, the capacitance density followed a same scaling trend related to their geometries. Epitaxial wafers were used with a post-etch doping process to reduce the series resistance in the devices in order to obtain a better frequency response, as desired for high frequency circuits. To achieve higher capacitance densities for energy storage purposes, we also designed a solid state supercapacitor device based on nanowires etched using MAAE with heavily doped n-type silicon substrates. The silicon nanowires were coated with RuO₂ using atomic layer deposition (ALD) to achieve a high capacitance. In this case, charge is stored through the formation of an electrical double layer and through reversible redox reactions. We showed that the capacitance density of these devices roughly scaled with the increased surface area of silicon nanowire arrays. The solid state supercapacitor achieved a capacitance density of 6.5mF/cm², which is comparable to the best results achieved with other types of on-chip supercapacitors. In contrast with other processes for forming on-chip supercapacitors, the supercapacitors we demonstrated were fabricated using a fully complementary metal-oxide-semiconductor (CMOS) technology compatible process. Moreover, the Si nanowire-based device achieved this high capacitance density without sacrificing power performance compared to the planar device.
by Wen Zheng.
Ph. D.
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Мадан, Роман Григорович. "Фотоперетворювачі на основі наноструктурованого кремнію." Bachelor's thesis, КПІ ім. Ігоря Сікорського, 2019. https://ela.kpi.ua/handle/123456789/28855.

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Робота складається з 55 сторінок, 4 розділів та містить 35 ілюстрацій, 24 таблиці та 19 джерел в переліку посилань. Актуальність теми – інтерес до створення гібридних органічних та неорганічних фотоперетворювачів, що мають більш низьку вартість, ніж традиційні. Метою роботи є дослідження вольт-амперних характеристик фотоперетворювачів. Порівняння характеристик пористого кремнію, отриманого за різного часу травлення. Об’єкт дослідження – фотоперетворювачі на основі наноструктурованого кремнію. Предмет дослідження – методи одержання та морфологія наноструктурованого шару оксиду індію й олова, а також плівки меланіну.
The work consists of 55 pages, 4 sections and contains 35 illustrations, 24 tables and 19 sources in the list of references. The actuality of the topic is the interest in the creation of hybrid organic and inorganic photoconductors that have a lower cost than traditional ones. The purpose of the work is to study the volt-ampere characteristics of nanostructured silicon solar cells. Comparison of the characteristics of porous silicon obtained at different times of etching. The object of research is nanostructured silicon solar cells. Subject of research - methods of obtaining and morphology of nanostructured layer of indium and tin oxide, as well as melanine films.
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Мадан, Роман Григорович. "Органо-неорганічні гібриди на основі меланіну." Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/38762.

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Актуальність теми – інтерес до створення гібридних органічних та неорганічних тонкоплівкових сонячних елементів, що мають більш низьку вартість, ніж традиційні сонячні елементи. Метою роботи є визначення оптимальних технологічних умов створення органічно-неорганічних структур для фотовольтаїчного застосування. Предмет дослідження – органо-неорганічні структури на основі кремнію та меланіну.
The relevance of the topic is the interest in creating hybrid organic and inorganic thin-film solar cells, which have a lower cost than traditional solar cells. The aim of the work is to determine the optimal technological conditions for the creation of organic-inorganic structures for photovoltaic applications. The subject of research - organo-inorganic structures based on silicon and melanin.
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Xu, Ying. "Fabrication and Characterization of Photodiodes for Silicon Nanowire Applications and Backside Illumination." University of Dayton / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1446313926.

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Togonal, Alienor. "Silicon Nanowires for Photovoltaics : from the Material to the Device." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX032/document.

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Les cellules solaires à base de nanofils de silicium offrent une alternative intéressante pour la réalisation de panneaux photovoltaïques à haut rendement et à faible coût. Elles bénéficient notamment des excellentes propriétés optiques des nanofils qui forment une surface à très faible réflectivité tout en piégeant efficacement la lumière. Dans cette thèse, nous utilisons et améliorons une méthode de gravure chimique peu coûteuse et industrialisable pour la fabrication de forêts de nanofils de silicium. En adaptant la mouillabilité du substrat et des nanofils, nous avons remédié au problème d'agglomération inhérent à cette méthode lorsqu’on veut obtenir des forêts denses et désordonnées de nanofils. En combinant cette méthode de gravure chimique à la lithographie assistée par nanosphères, nous avons pu fabriquer des réseaux ordonnés de nanofils avec un contrôle précis des propriétés géométriques (diametre des nanofils et distance entre eux). Les propriétés optiques de ces réseaux ont été étudiées théoriquement et expérimentalement afin d'identifier les configurations optimales. Nous avons ensuite fabriqué des cellules solaires à partir de ces différents types de nanofils et deux types de structures. Le premier type, des cellules solaires HIT (Hétérojonction avec couche mince Intrinsèque) à base de nanofils de silicium, a été fabriqué par RF-PECVD. L'optimisation des conditions de dépôt plasma nous a permis d'obtenir des cellules solaires hautement performantes: rendements de 12,9% et facteurs de forme au-delà de 80%. Le second type, des cellules solaires hybrides, est basé sur la combinaison d'une couche organique et des nanofils de silicium. La caractérisation des cellules fabriquées montre des rendements prometteurs. Enfin, nous présentons des résultats préliminaires pour transférer ces concepts à une technologie couches minces
Silicon Nanowire (SiNW) based solar cells offer an interesting choice towards low-cost and highly efficient solar cells. Indeed solar cells based on SiNWs benefit from their outstanding optical properties such as extreme light trapping and very low reflectance. In this research project, we have fabricated disordered SiNWs using a low-cost top-down approach named the Metal-Assisted-Chemical-Etching process (MACE). The MACE process was first optimized to reduce the strong agglomeration observed at the top-end of the SiNWs by tuning the wettability properties of both the initial substrate and the SiNWs surface. By combining the MACE process with the nanosphere lithography, we have also produced ordered SiNW arrays with an accurate control over the pitch, diameter and length. The optical properties of these SiNW arrays were then investigated both theoretically and experimentally in order to identify the geometrical configuration giving the best optical performance. Disordered and ordered SiNW arrays have been integrated into two types of solar cells: heterojunction with intrinsic thin layer (HIT) and hybrid devices. SiNW based HIT devices were fabricated by RF-PECVD and the optimization of the process conditions has allowed us to reach efficiency as high as 12.9% with excellent fill factor above 80%. Hybrid solar cells based on the combination of SiNWs with an organic layer have also been studied and characterized. The possible transfer of this concept to the thin film technology is finally explored
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Wickramasinghe, Thushan E. "Growth Techniques and Optical and Electrical Characterization of Quantum Confined Zero-Dimensional and Two-Dimensional Device Structures." Ohio University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou156631995093606.

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Books on the topic "Metal chemical etching"

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Micro- and Nano-Fabrication by Metal Assisted Chemical Etching. MDPI, 2021. http://dx.doi.org/10.3390/books978-3-03943-846-4.

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Parker, Philip M. The 2007-2012 World Outlook for Photo Chemical Metal Etching and Machining Excluding Metal Nameplates. ICON Group International, Inc., 2006.

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The 2006-2011 World Outlook for Photo Chemical Metal Etching and Machining Excluding Metal Nameplates. Icon Group International, Inc., 2005.

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Book chapters on the topic "Metal chemical etching"

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Borsellino, C., G. Di Bella, and V. F. Ruisi. "Effect of Chemical Etching on Adhesively Bonded Aluminum AA6082." In Sheet Metal 2007, 669–76. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-437-5.669.

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Lee, Seyeong, Dong-Hee Kang, Seong-Min Kim, and Myung-Han Yoon. "Vertical silicon nanostructures via metal-assisted chemical etching." In Silicon Nanomaterials Sourcebook, 169–92. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-8.

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Ivanov, B., D. Philipov, V. Shanov, and G. Peev. "Laser Induced Chemical Etching of Silicon with SF6 Using a Copper Bromide Vapour Laser." In Pulsed Metal Vapour Lasers, 383–88. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_41.

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Hildreth, Owen, and C. P. Wong. "Nano-metal-Assisted Chemical Etching for Fabricating Semiconductor and Optoelectronic Devices." In Materials for Advanced Packaging, 879–922. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45098-8_21.

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Toan, Nguyen Van, and Takahito Ono. "Capacitive Silicon Resonators with Narrow Gaps Formed by Metal-Assisted Chemical Etching." In Capacitive Silicon Resonators, 82–98. Boca Raton, FL : CRC Press/Taylor & Francis Group, [2020]: CRC Press, 2019. http://dx.doi.org/10.1201/9780429266010-7.

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Sharma, Virender, Abhishek Verma, Vinod Kumar Jain, and Daisy Verma. "Antireflection Properties of Multi-crystalline Black Silicon with Acid Textured Surfaces Using Two Step Metal Assisted Chemical Etching." In Springer Proceedings in Physics, 23–28. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_3.

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Hadjersi, T., N. Gabouze, A. Ababou, M. Boumaour, W. Chergui, H. Cheraga, S. Belhouse, and A. Djeghri. "Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon." In Materials Science Forum, 139–44. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-962-8.139.

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Vosough, Manoucheh, Ping Liu, and Inge Svenningsson. "Depth Profile of Titanium Alloy (Ti-6Al-4V) and Residual Stress Measured by Using X-Ray Diffraction after Metal Cutting Assisted by High-Pressured Jet Cooling Evaluation of Etching Methods: ION Beam (EDOS) and Electro-Chemical Etching." In Materials Science Forum, 545–51. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-969-5.545.

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Lee, Seyeong, Dong-Hee Kang, Seong-Min Kim, and Myung-Han Yoon. "Vertical silicon nanostructures via metal-assisted chemical etching." In Silicon Nanomaterials Sourcebook, 169–92. CRC Press, 2017. http://dx.doi.org/10.1201/9781315153551-9.

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Halstead, Judith Ann. "REACTIONS OF METAL SPECIES IN DRY ETCHING AND CHEMICAL VAPOR DEPOSITION." In Gas Phase Metal Reactions, 661–82. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89070-2.50031-1.

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Conference papers on the topic "Metal chemical etching"

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AMBROŽ, Ondřej, Jan ČERMÁK, and Šárka MIKMEKOVÁ. "Apparatus for Automatic chemical etching of metallographic samples." In METAL 2021. TANGER Ltd., 2021. http://dx.doi.org/10.37904/metal.2021.4146.

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Leong, Wei Sun, and John T. L. Thong. "Metal-assisted chemical etching of molybdenum disulphide." In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2015. http://dx.doi.org/10.1109/nano.2015.7388658.

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Xu, Hongbo, Jianqiang Wang, Hongyun Zhao, and Mingyu Li. "Silicon Vias Fabricatied by Metal-Assisted Chemical Etching." In 2020 21st International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2020. http://dx.doi.org/10.1109/icept50128.2020.9202901.

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Toan, N. V., M. Toda, and T. Ono. "High aspect silicon structures using metal assisted chemical etching." In 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2016. http://dx.doi.org/10.1109/nano.2016.7751348.

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Koval, Viktoriia, Yuriy Yakymenko, Anatoliy Ivashchuk, Mykhailo Dusheyko, Oleksandr Masalskyi, Mykola Koliada, and Dmytro Kulish. "Metal-Assisted Chemical Etching of Silicon for Photovoltaic Application." In 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783506.

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Xu, Ying, Chuan Ni, and Andrew Sarangan. "Silicon nanowire photodetectors made by metal-assisted chemical etching." In SPIE Nanoscience + Engineering, edited by Eva M. Campo, Elizabeth A. Dobisz, and Louay A. Eldada. SPIE, 2016. http://dx.doi.org/10.1117/12.2238480.

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Jana, S., and S. R. Bhattacharyya. "Metal assisted chemical etching for light emitting silicon nanowires." In PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE: RAM 2013. AIP, 2013. http://dx.doi.org/10.1063/1.4810212.

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Asano, Yusaku, Keiichiro Matsuo, Hisashi Ito, Kazuhito Higuchi, Kazuo Shimokawa, and Tsuyoshi Sato. "A novel wafer dicing method using metal-assisted chemical etching." In 2015 IEEE 65th Electronic Components and Technology Conference (ECTC). IEEE, 2015. http://dx.doi.org/10.1109/ectc.2015.7159692.

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Song-Ting Yang, Chien-Ting Liu, Subramani Thiyagu, Chen-Chih Hsueh, and Ching-Fuh Lin. "Fabrication of Silicon thin film by metal-assisted chemical etching." In 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2014. http://dx.doi.org/10.1109/nano.2014.6967974.

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Pyatilova, O., S. Gavrilov, A. Sysa, A. Savitskiy, A. Shuliatyev, A. Dudin, and A. Pavlov. "Metal-assisted chemical etching of silicon with different metal films and clusters: a review." In The International Conference on Micro- and Nano-Electronics 2016, edited by Vladimir F. Lukichev and Konstantin V. Rudenko. SPIE, 2016. http://dx.doi.org/10.1117/12.2266862.

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