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Journal articles on the topic 'Metal chalcogenide films'

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Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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1

Chuprakov, I. S., and K. H. Dahmen. "CVD of metal chalcogenide films." Le Journal de Physique IV 09, PR8 (September 1999): Pr8–313—Pr8–319. http://dx.doi.org/10.1051/jp4:1999838.

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2

Zhang, Ruihong, Seonghyuk Cho, Daw Gen Lim, Xianyi Hu, Eric A. Stach, Carol A. Handwerker, and Rakesh Agrawal. "Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices." Chemical Communications 52, no. 28 (2016): 5007–10. http://dx.doi.org/10.1039/c5cc09915c.

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3

Polivtseva, Svetlana, Julia Kois, Tatiana Kruzhilina, Reelika Kaupmees, Mihhail Klopov, Palanivel Molaiyan, Heleen van Gog, Marijn A. van Huis, and Olga Volobujeva. "Solution-Mediated Inversion of SnSe to Sb2Se3 Thin-Films." Nanomaterials 12, no. 17 (August 23, 2022): 2898. http://dx.doi.org/10.3390/nano12172898.

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New facile and controllable approaches to fabricating metal chalcogenide thin films with adjustable properties can significantly expand the scope of these materials in numerous optoelectronic and photovoltaic devices. Most traditional and especially wet-chemical synthetic pathways suffer from a sluggish ability to regulate the composition and have difficulty achieving the high-quality structural properties of the sought-after metal chalcogenides, especially at large 2D length scales. In this effort, and for the first time, we illustrated the fast and complete inversion of continuous SnSe thin-films to Sb2Se3 using a scalable top-down ion-exchange approach. Processing in dense solution systems yielded the formation of Sb2Se3 films with favorable structural characteristics, while oxide phases, which are typically present in most Sb2Se3 films regardless of the synthetic protocols used, were eliminated. Density functional theory (DFT) calculations performed on intermediate phases show strong relaxations of the atomic lattice due to the presence of substitutional and vacancy defects, which likely enhances the mobility of cationic species during cation exchange. Our concept can be applied to customize the properties of other metal chalcogenides or manufacture layered structures.
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4

Chane-Ching, J. Y., L. Perrin, P. Puech, V. Bourdon, V. Foncrose, A. Balocchi, X. Marie, and P. Lavedan. "Water-soluble, heterometallic chalcogenide oligomers as building blocks for functional films." Inorganic Chemistry Frontiers 3, no. 5 (2016): 689–701. http://dx.doi.org/10.1039/c5qi00250h.

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5

Deo, Soumya R., Ajaya K. Singh, Lata Deshmukh, and Md Abu Bin Hasan Susan. "Metal Chalcogenide Nanocrystalline Solid Thin Films." Journal of Electronic Materials 44, no. 11 (August 4, 2015): 4098–127. http://dx.doi.org/10.1007/s11664-015-3940-0.

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6

Priyadarshini, Priyanka, Subhashree Das, and Ramakanta Naik. "A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications." RSC Advances 12, no. 16 (2022): 9599–620. http://dx.doi.org/10.1039/d2ra00771a.

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7

Lokhande, C. D. "Chemical deposition of metal chalcogenide thin films." Materials Chemistry and Physics 27, no. 1 (January 1991): 1–43. http://dx.doi.org/10.1016/0254-0584(91)90158-q.

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8

Al-Shakban, Mundher, Peter D. Matthews, and Paul O'Brien. "A simple route to complex materials: the synthesis of alkaline earth – transition metal sulfides." Chemical Communications 53, no. 72 (2017): 10058–61. http://dx.doi.org/10.1039/c7cc05643e.

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9

Sengupta, Sucheta, Rinki Aggarwal, and Yuval Golan. "The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films." Materials Chemistry Frontiers 5, no. 5 (2021): 2035–50. http://dx.doi.org/10.1039/d0qm00931h.

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This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.
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10

Chen, Huihui, Chuanbao Cao, Binghui Ge, Yongkai Li, Junfeng Han, and Zhuo Chen. "Wafer-scale metal chalcogenide thin films via an ion exchange approach." Journal of Materials Chemistry C 8, no. 41 (2020): 14393–401. http://dx.doi.org/10.1039/d0tc03540h.

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Developing facile and controllable ways to tune the optoelectronic properties of metal chalcogenide thin films via chemical composition is of significant importance for boosting their application in various functional devices.
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11

Ho, S. M., M. H. D. Othman, M. R. Adam, and K. Mohanraj. "A Short Review on Raman Studies of Metal Chalcogenide Semiconductor Thin Films." Asian Journal of Chemistry 33, no. 7 (2021): 1481–87. http://dx.doi.org/10.14233/ajchem.2021.23112.

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The productions of the thin metallic chalcogenide films are of particular interest for the wide range of fabrication of the solar cells, sensors, photodiode arrays, photoconductors. Raman spectroscopy is used to measure the scattering radiation of a matter. Basically, the spectroscopic methods can be defined as the study of the interaction of electromagnetic radiation with a matter. It can be based on the phenomenon of absorption, fluorescence, emission or scattering. The observation of peaks supported the formation of amorphous or crystalline nature of the samples. In this short review, the authors had gathered some informations about the Raman studies of recently synthesized metal chalcogenide semiconductor thin films.
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12

Maserati, Lorenzo, Mirko Prato, Stefano Pecorario, Bianca Passarella, Andrea Perinot, Anupa Anna Thomas, Filippo Melloni, Dario Natali, and Mario Caironi. "Photo-electrical properties of 2D quantum confined metal–organic chalcogenide nanocrystal films." Nanoscale 13, no. 1 (2021): 233–41. http://dx.doi.org/10.1039/d0nr07409h.

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[AgSePh]∞ is a metal–organic chalcogenide material featuring hybrid quantum wells electronic structure. Photo-generated charge carriers can be extracted by metal contacts, enabling efficient UV photo-detection.
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13

Sava, F., I. D. Simandan, I. Stavarache, C. Porosnicu, C. Mihai, and A. Velea. "Thermal stability of amorphous metal chalcogenide thin films." Journal of Non-Crystalline Solids 559 (May 2021): 120663. http://dx.doi.org/10.1016/j.jnoncrysol.2021.120663.

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14

Zharovsky, L. F., L. V. Zavyalova, and G. S. Svechnikov. "Metal chalcogenide films prepared from chelate organometallic compounds." Thin Solid Films 128, no. 3-4 (June 1985): 241–49. http://dx.doi.org/10.1016/0040-6090(85)90076-8.

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15

Mane, R. S., and C. D. Lokhande. "Chemical deposition method for metal chalcogenide thin films." Materials Chemistry and Physics 65, no. 1 (June 2000): 1–31. http://dx.doi.org/10.1016/s0254-0584(00)00217-0.

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16

Deo, Soumya R., Ajaya K. Singh, Lata Deshmukh, and Md Abu Bin Hasan Susan. "ChemInform Abstract: Metal Chalcogenide Nanocrystalline Solid Thin Films." ChemInform 46, no. 49 (November 19, 2015): no. http://dx.doi.org/10.1002/chin.201549215.

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17

Hasan, Shaymaa Qasim Abdul, Ahmed Z. Obaid, Hanan K. Hassun, and Auday H. Shaban. "Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells." Key Engineering Materials 886 (May 2021): 57–65. http://dx.doi.org/10.4028/www.scientific.net/kem.886.57.

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Thin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide materials, paly an essential role in solar energy conversion market. In this paper, transition metals with chalcogenide Nickel selenide termed as (NiSe2/Si) are synthesized. To this end, polycrystalline NiSe2 thin films are deposited through the use of vacuum evaporation technique under vacuum of 2.1x10-5 mbar, which are supplied to different annealing temperatures. The results show that under an annealed temperature of 525 K, the nickel sulfoselenide thin films are polycrystalline with an efficient regularity and best crystalline quality. In addition, the results demonstrate that the intersection argument for the optical properties under investigation provid the direct bandgap, over which the films have inferred on variety (1.55 and 1.75 eV). Overall, the results illustrate that an efficiency of 2.89% can be achieved with 525 K temperature.
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18

Wang, Zhongyong, Yuanyu Ma, Prathamesh B. Vartak, and Robert Y. Wang. "Precursors for PbTe, PbSe, SnTe, and SnSe synthesized using diphenyl dichalcogenides." Chemical Communications 54, no. 65 (2018): 9055–58. http://dx.doi.org/10.1039/c8cc03869d.

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19

Soonmin, Ho, Sreekanth Mandati, Ramkumar Chandran, Archana Mallik, Mohammad Arif Sobhan Bhuiyan, and Deepa K. G. "Raman Investigations of Metal Chalcogenide Thin Films (A Short Review)." Oriental Journal of Chemistry 35, Special Issue 1 (February 14, 2019): 01–07. http://dx.doi.org/10.13005/ojc/35specialissue101.

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Cu In Se2 thin films are very important semiconductor material for solar cell applications because of chemical stability, direct band gap and high optical absorption coefficient. In this work, these films have been prepared by using different deposition techniques such as electrodeposition, solvothermal, vacuum evaporation, hydrothermal and pulsed electrode position technique. Cu In Se2 thin films were fully characterized by using field emission scanning electron microscopy, X-ray diffraction, Energy dispersive X-ray analysis, atomic force microscopy, UV-Visible spectrophotometer and Raman spectroscopy in order to study physical properties.
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20

Schwarz, S., S. Dufferwiel, P. M. Walker, F. Withers, A. A. P. Trichet, M. Sich, F. Li, et al. "Two-Dimensional Metal–Chalcogenide Films in Tunable Optical Microcavities." Nano Letters 14, no. 12 (November 11, 2014): 7003–8. http://dx.doi.org/10.1021/nl503312x.

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21

Mane, R. M., S. S. Mali, V. B. Ghanwat, V. V. Kondalkar, K. V. Khot, S. R. Mane, D. B. Shinde, P. S. Patil, and P. N. Bhosale. "Photoelectrochemical Performance of MoBiInSe5 Mixed Metal Chalcogenide Thin Films." Materials Today: Proceedings 2, no. 4-5 (2015): 1458–63. http://dx.doi.org/10.1016/j.matpr.2015.07.069.

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22

Milliron, Delia J., David B. Mitzi, Matthew Copel, and Conal E. Murray. "Solution-Processed Metal Chalcogenide Films for p-Type Transistors." Chemistry of Materials 18, no. 3 (February 2006): 587–90. http://dx.doi.org/10.1021/cm052300r.

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23

Yilmaz, Ceren, and Ugur Unal. "Photoelectrochemical properties of electrochemically deposited metal chalcogenide/ZnO films." Applied Surface Science 350 (September 2015): 87–93. http://dx.doi.org/10.1016/j.apsusc.2015.03.134.

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24

Rojas-Montoya, Iván D., Alicia Santana-Silva, Verónica García-Montalvo, Miguel-Ángel Muñoz-Hernández, and Margarita Rivera. "N-(Chalcogen)phosphorylated (chalcogen)ureas of zinc and cadmium(ii): SSPs for group 12–16 thin films." New J. Chem. 38, no. 10 (2014): 4702–10. http://dx.doi.org/10.1039/c4nj00482e.

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25

Liu, Feng, Jun Zhu, Linhua Hu, Bing Zhang, Jianxi Yao, Md K. Nazeeruddin, Michael Grätzel, and Songyuan Dai. "Low-temperature, solution-deposited metal chalcogenide films as highly efficient counter electrodes for sensitized solar cells." Journal of Materials Chemistry A 3, no. 12 (2015): 6315–23. http://dx.doi.org/10.1039/c5ta00028a.

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Solution-deposited chalcogenide films show better catalytic performance than platinum-loaded electrodes in both iodide/triiodide (FeSe2) and polysulfide (Cu1.8S and CuSe) redox systems.
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26

Petkova, Tamara, Vania Ilcheva, P. Ilchev, and P. Petkov. "Ge-Chalcogenide Glasses – Properties and Application as Optical Material." Key Engineering Materials 538 (January 2013): 316–19. http://dx.doi.org/10.4028/www.scientific.net/kem.538.316.

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The great interest toward chalcogenide materials is due to the simple technology of preparation in bulk forms and thin films; good thermal and mechanical properties; transparency and photo-sensibility in the IR spectral range. These advantages determine the possibilities for potential application of these materials like optical storage media, memory devices, optical elements (lenses, waveguides, gratings, etc). The idea of present study is to trace the impact of gallium or indium as metal introduction on the behaviors of the glasses from germanium - chalcogenide system.
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27

Mane, R. S., and C. D. Lokhande. "ChemInform Abstract: Chemical Deposition Method for Metal Chalcogenide Thin Films." ChemInform 31, no. 34 (June 3, 2010): no. http://dx.doi.org/10.1002/chin.200034236.

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28

Pawar, S. M., B. S. Pawar, J. H. Kim, Oh-Shim Joo, and C. D. Lokhande. "Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films." Current Applied Physics 11, no. 2 (March 2011): 117–61. http://dx.doi.org/10.1016/j.cap.2010.07.007.

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29

Wang, Han, Amrita Yasin, Nathaniel Quitoriano, and George Demopoulos. "Aqueous-based Binary Sulfide Nanoparticle Inks for Cu2ZnSnS4 Thin Films Stabilized with Tin(IV) Chalcogenide Complexes." Nanomaterials 9, no. 10 (September 26, 2019): 1382. http://dx.doi.org/10.3390/nano9101382.

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Cu2ZnSnS4(CZTS) is a promising semiconductor material for photovoltaic applications,with excellent optical and electronic properties while boasting a nontoxic, inexpensive, andabundant elemental composition. Previous high‐quality CZTS thin films often required eithervacuum‐based deposition processes or the use of organic ligands/solvents for ink formulation,which are associated with various issues regarding performance or economic feasibility. To addressthese issues, an alternative method for depositing CZTS thin films using an aqueous‐basednanoparticle suspension is demonstrated in this work. Nanoparticles of constituent binary sulfides(CuxS and ZnS) are stabilized in an ink using tin(IV)‐based, metal chalcogenide complexes such as[Sn2S6]4‐. This research paper provides a systematic study of the nanoparticle synthesis and inkformulation via the enabling role of the tin chalcogenide complexing power, the deposition of highqualityCZTS thin films via spin coating and annealing under sulfur vapor atmosphere, theirstructural characterization in terms of nanocrystal phase, morphology, microstructure, anddensification, and their resultant optoelectronic properties.
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30

Helan, P. Prathiba Jeya, K. Mohanraj, and G. Sivakumar. "Thermally evaporated AgyCu2–ySnSe3 metal chalcogenide thin films and its characterization." Optical Materials 62 (December 2016): 403–10. http://dx.doi.org/10.1016/j.optmat.2016.10.038.

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31

Romero, J. S., A. G. Fitzgerald, and M. J. Rose. "A transmission electron microscope study of metal/chalcogenide amorphous thin films." Applied Surface Science 234, no. 1-4 (July 2004): 369–73. http://dx.doi.org/10.1016/j.apsusc.2004.05.039.

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32

Lee, Heayeon, Masaki Kanai, and Tomoji Kawai. "Preparation of transition metal chalcogenide thin films by pulsed laser ablation." Thin Solid Films 277, no. 1-2 (May 1996): 98–100. http://dx.doi.org/10.1016/0040-6090(95)08022-8.

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33

Takagaki, Y. "Charge storage in metal-chalcogenide bilayer junctions." Journal of Physics D: Applied Physics 54, no. 29 (May 14, 2021): 295105. http://dx.doi.org/10.1088/1361-6463/abfbf8.

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34

Nair, P. K., M. T. S. Nair, A. Fernandez, and M. Ocampo. "Prospects of chemically deposited metal chalcogenide thin films for solar control applications." Journal of Physics D: Applied Physics 22, no. 6 (June 14, 1989): 829–36. http://dx.doi.org/10.1088/0022-3727/22/6/021.

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35

El-Hakim, S. A., and M. F. Kotkata. "Evidence for insulator–metal transition in amorphous chalcogenide Se–Ge–Te films." Philosophical Magazine 87, no. 26 (August 14, 2007): 4059–71. http://dx.doi.org/10.1080/14786430701491086.

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36

Fernández, A. M., and P. K. Nair. "Characteristics of metal chalcogenide solar control films with a protective polymer coating." Thin Solid Films 204, no. 2 (October 1991): 459–71. http://dx.doi.org/10.1016/0040-6090(91)90084-b.

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37

Mane, R. M., S. R. Mane, R. R. Kharade, and P. N. Bhosale. "Synthesis and characterization of new quaternary MoBiInSe5 mixed metal chalcogenide thin films." Journal of Alloys and Compounds 491, no. 1-2 (February 2010): 321–24. http://dx.doi.org/10.1016/j.jallcom.2009.10.159.

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38

Zhang, Jiaxu, Xiang Wang, Jing Lv, Dong-Sheng Li, and Tao Wu. "A multivalent mixed-metal strategy for single-Cu+-ion-bridged cluster-based chalcogenide open frameworks for sensitive nonenzymatic detection of glucose." Chemical Communications 55, no. 45 (2019): 6357–60. http://dx.doi.org/10.1039/c9cc02905b.

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39

Choi, H., H. K. Kim, Y. W. Koo, K. H. Nam, S. M. Koo, W. J. Cho, and H. B. Chung. "Investigation of Electrical Properties in Chalcogenide Thin Film According to Wave Length." Advanced Materials Research 31 (November 2007): 135–37. http://dx.doi.org/10.4028/www.scientific.net/amr.31.135.

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Programmable metallization cell (PMC) memory is based on the electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. We investigate the nature of thin films formed by the photo-dissolution of Ag into Ge-Se-Te glasses for use in programmable metallization cell devices. Glassy alloys of a-Ge25Se75-xTex(x = 0, 25) are prepared by well known melt-quenching technique. Thin films of a-Ge25Se75-xTex(x = 0, 25) glassy alloys are evaporated by vacuum evaporation technique at ~10-6 torr on glass substrate at room temperature. Optical properties in this study concerns photo-diffusion of Ag on Ag-doped Ge-Se-Te electrolytes. With these promising properties, the composition a-Ge25Se75-xTex(x = 0, 25) is recommended as a potential candidate for PMC-RAM.
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40

LIU, KEGAO, NIANJING JI, YONG XU, and HONG LIU. "IDENTIFICATION OF ABNORMAL PHASE AND ITS FORMATION MECHANISM IN SYNTHESIZING CHALCOGENIDE FILMS." Surface Review and Letters 23, no. 01 (February 2016): 1550081. http://dx.doi.org/10.1142/s0218625x1550081x.

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Chalcogenide films can be used in thin-film solar cells due to their high photoelectric conversion efficiencies. It was difficult to identify one abnormal phase with high X-ray diffraction (XRD) intensity and preferred orientation in the samples for preparing chalcogenide films by spin-coating and co-reduction on soda-lime glass ([Formula: see text]) substrates. The raw materials and reductant are metal chlorides and hydrazine hydrate respectively. In order to identify this phase, a series of experiments were done under different conditions. The phases of obtained products were analyzed by XRD and the size and morphology were characterized by scanning electron microscope (SEM) and atomic force microscopy (AFM). From the experimental results, first it was proved that the abnormal phase was water-soluble by water immersion experiment, then it was identified as NaCl crystal through XRD, energy dispersive spectrometer (EDS) and SEM. The cubic NaCl crystals have high crystallinity with size lengths of about 0.5–2[Formula: see text][Formula: see text]m and show a [Formula: see text]100[Formula: see text] preferred orientation. The reaction mechanism of NaCl crystal was proposed as follows: The NaCl crystal was formed by reaction of Na2O and HCl in a certain experimental conditions.
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41

Anand, T. Joseph Sahaya, and Nor Hamizah Mazlan. "Electro Synthesized MoTe2 Thin Films and their Semiconductor Studies towards Photoelectrochemical Cell." Advanced Materials Research 845 (December 2013): 392–97. http://dx.doi.org/10.4028/www.scientific.net/amr.845.392.

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Transition metal chalcogenide molybdenum ditelluride (MoTe2) thin films have been electrosynthesized cathodically on indium tin oxide-coated (ITO) conducting glass substrates from ammonaical solution of H2MoO4 and TeO2. The electrode potential was varied while the bath temperature was maintained at 40±1 oC and deposition time of 30 minutes. Highly textured MoTe2 films with polycrystalline nature are observed by X-ray diffraction analysis. Compositional analysis by EDX gives their stoichiometric relationships. Scanning electron microscope (SEM) was used to study surface morphology and shows that the films are smooth, uniform and useful for device fabrication. The optical absorption spectra showed that the material has an indirect band-gap value of 1.91-2.04 eV with different electrode potential. Besides, the film exhibited p-type semiconductor behavior. Keywords: Molybdenum ditelluride; Thin films; Electrodepositon; Solar cell;
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42

Chandrasekar, J., and Durgachalam Manikandan. "Structural and Optical Properties of Chemically Deposited Metal Chalcogenide Thin Film CrS and its Photovoltaic Application." Asian Journal of Chemistry 34, no. 2 (2022): 279–83. http://dx.doi.org/10.14233/ajchem.2022.23470.

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In this work, chromium sulfide (CrS) thin films were grown on the acetic acid substrates by chemical bath deposition to prepare non-toxic photovoltaic devices. The combined single-source precursor approach has been developed for the deposition method using tris(diethyldithiocarbamato)chromium(III) for the deposition of CrS thin films grown at bath temperatures of 30, 60 and 90 ºC and at a constant deposition time of 30-120 min. The sufrace mophology of the prepared films have been analyzed by SEM and HR-TEM techniques. The study of the films indicate the distributed roughness and nano bundled hexagonal structures. The energy dispersive X-ray (EDX) spectroscopy analysis conformed the presence of Cr and S. The polycrystalline behaviour of the films was studied by an XRD study which revealed the mixed phases with a predicted crystallite size of 20 nm. The optical measurements showed films had a maximum transmittance of 90% in the visible region and the evaluated energy band varied in the range of 2.2-2.378 eV with the change of bath temperatures. This suggests that CrS thin film prepared at 90 ºC has enhanced crystalline superiority. According to photoluminescence (PL) analysis, the green emission can be attributed to the presence of several deep trap states or defects in the CrS structure. Moreover, natural dye sensitized solar cells (DSSCs) in CrS thin film prepared at 90 ºC, Jsc (28.0 mA/cm2) produced a larger voltage in the short circuit as compared to synthetic dye sensitized solar cells (DSSCs) using CrS thin film Jsc (22.5 mA/cm2).
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43

Davis, Jessica L., Karunamuni L. Silva, and Stephanie L. Brock. "Exploiting kinetics for assembly of multicomponent nanoparticle networks with programmable control of heterogeneity." Chemical Communications 56, no. 3 (2020): 458–61. http://dx.doi.org/10.1039/c9cc09027d.

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44

Ye, Jiachao, Shaojing Mou, Rongji Zhu, Linfei Liu, and Yijie Li. "Laser fluence dependence of stoichiometry and superconductivity of iron chalcogenide superconducting films on metal tapes." Journal of Applied Physics 132, no. 1 (July 7, 2022): 013902. http://dx.doi.org/10.1063/5.0098216.

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Iron chalcogenide Fe(Se,Te) films with thicknesses of 150 nm were deposited on CeO2-buffered metal tapes via pulsed laser deposition using various laser fluences. The film crystallinity and stoichiometry improved upon increasing the laser fluence. This was explained by the ablation threshold that the superconducting performance was better at higher laser fluences and was attributed to the joint contribution of higher Te contents, better texture, and strengthened in-plane strain. In addition, the pinning mechanism was studied by analyzing the in-field performance characteristics of the Fe(Se,Te) films. The dominant pinning center remained point pinning and was independent of the magnetic field direction and temperature. A collective pinning theory-based analysis showed that the vortex pinning behavior in the Fe(Se,Te) film varied from δ l pinning to δ Tc pinning as the temperature approached the critical temperature. This was related to film superconductivity inhomogeneity, which was driven by unreacted Se and Te atoms.
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45

ELSAYED, S., and S. FAYEK. "Low temperature dielectric behavior and ac conductivity in metal-containing chalcogenide GeS films." Solid State Ionics 176, no. 1-2 (January 14, 2005): 149–54. http://dx.doi.org/10.1016/j.ssi.2004.07.004.

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46

Zakery, A., C. W. Slinger, P. J. S. Ewen, A. P. Firth, and A. E. Owen. "Chalcogenide gratings produced by the metal photodissolution effect." Journal of Physics D: Applied Physics 21, no. 10S (October 14, 1988): S78—S81. http://dx.doi.org/10.1088/0022-3727/21/10s/022.

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47

Maskaeva, Larisa N., Anastasia D. Kutyavina, Anna I. Zhdanova, Roman A. Gagarin, Tatiana V. Vinogradova, and Vyacheslav F. Markov. "Chemical bath synthesis of metal chalcogenide films. Part 39. Chemical bath deposition of ZnS films by thioacetamide." Butlerov Communications 57, no. 1 (January 31, 2019): 115–26. http://dx.doi.org/10.37952/roi-jbc-01/19-57-1-115.

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ZnS thin films are promising as a buffer layer in solar cells, which can be basis of photovoltaic cells, photoelectric sensors, and light-emitting diodes. For the preparation of thin ZnS films by chemical bath deposition, thioacetamide or thiourea is used as a chalcogenization agent, and ammonia, triethanolamine and sodium citrate are mainly used as ligands, carrying out the process in an alkaline medium. In the present work, in order to predict the conditions of hydrochemical deposition of ZnS films, we have analyzed ionic equilibria in two reaction systems “ZnCl2 – NH4OH – CH3CNH2” and “ZnCl2 – CH3CSNH2 – KHC8H4O4” that differ in acidity of the medium. An analysis of ionic equilibrium showed that in the first bath ~80% of the metal is in the form of a neutral hydroxo complex Zn(OH)2 at pH > 7, and in the second more than 98% of zinc is present as acetate complexes Zn(CH3COO)+ and Zn(CH3COO)2 in the range of pH from 0 to 7. The thermodynamic evaluation of the boundary conditions for the formation of zinc sulfide made it possible to conclude that a zinc sulfide film can be formed in both systems without the admixture of Zn(OH)2 hydroxide. ZnS films were obtained by hydrochemical deposition with thick about 100 nm from both systems. Using local energy-dispersive elemental analysis, it was found that the average ratio between the main elements of Zn and S in the layers obtained in an alkaline medium is 49.48 and 50.52 at.%, and in the synthesized from acidic solutions – 50.35 and 49.65 at.%. According to the data of electron microscopy, up to 85% of the agglomerates have an average size of 200-450 nm that formed from ZnS particles growing in an alkaline reaction bath. At the same time, there are aggregates whose dimensions reach 700 nm. The layers that deposited from relatively acidic solutions are distinguished by a higher degree of dispersion. Here up to ~90% of the film-forming particles is in the nanoscale range from 50 to 90 nm.
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Wang, Jia-Yin, Wen-Hua Li, Zhong Wei, Chong Zhang, Ya-Hui Li, Xi-Yan Dong, Gang Xu, and Shuang-Quan Zang. "A hydrophobic semiconducting metal–organic framework assembled from silver chalcogenide wires." Chemical Communications 56, no. 14 (2020): 2091–94. http://dx.doi.org/10.1039/c9cc08402a.

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49

Vijay, Shiljashree, Wei Cheng, and Syed Mubeen Jawahar Hussaini. "A Room Temperature Electrodeposition Method to Develop High Performance Metal-Chalcogenide Nanowire Array-Based Photoelectrochemical (PEC) Device for Solar Hydrogen Production." ECS Meeting Abstracts MA2022-02, no. 24 (October 9, 2022): 990. http://dx.doi.org/10.1149/ma2022-0224990mtgabs.

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Photoelectrochemical (PEC) water splitting has emerged as a significant and promising technique for the generation of low-cost, highly efficient, and sustainable hydrogen(H2) fuel. Currently, PEC hydrogen production has been successfully demonstrated on a laboratory scale. However, the commercial viability of PECs depends critically on the cost of H2 produced by the PECs, which is affected by the cost of PEC construction. Here we consider electrodeposition as a promising method to fabricate multijunction PEC cells because this is an inexpensive solvent-based technique operated at low temperature with the ability to control the film thickness by varying the deposition potential and charge passed which can be optimized to perform like other matured and expensive vapor-based deposition techniques functioning at high temperatures. In this research work, we report a room temperature, low-cost electrodeposition method to synthesize metal chalcogenide semiconductor thin films and nanowire arrays in superstrate configuration and demonstrate its applicability for solar hydrogen production. Specifically, the talk will address the effect of electrodeposition parameters and post-treatment on observed photocurrent and photovoltage responses. By optimizing the deposition potential and deposition charge we were able to achieve photocurrent densities exceeding 15 mA cm-2 for thin films and nanowire arrays when tested using regenerative redox couples. Finally, the talk will cover the aspects of developing a buried junction PV/PEC using electrodeposited chalcogenide semiconductors for solar hydrogen production.
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King, M. O., I. M. McLeod, D. Hesp, V. R. Dhanak, A. Tadich, L. Thomsen, B. C. C. Cowie, D. A. MacLaren, and M. Kadodwala. "The templated growth of a chiral transition metal chalcogenide." Surface Science 629 (November 2014): 94–101. http://dx.doi.org/10.1016/j.susc.2014.02.008.

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