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Dissertations / Theses on the topic 'MESFET'

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Published: 4 June 2021
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1

Turner, Gary Chandler. "Zinc Oxide MESFET Transistors." Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.

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Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the starting material for so-called 'transparent electronics', where the entire device is transparent. Transparent transistors have the potential to improve the performance of the electronics currently used in LCD display screens. Most common semiconductor devices require the material to be selectively doped with specific impurities that can make the material into one of two electronically distinct types – p- or n-type. Unfortunately, making reliable p-type ZnO has been elusive to date, despite considerable efforts worldwide. This lack of p-type material has hindered development of transistors based on this material. One alternative is a Schottky junction, which can be used as the active element in a type of transistor known as a metal-semiconductor field effect transistor, MESFET. Schottky junctions are traditionally made from noble metal layers deposited onto semiconductors. Recent work at the Canterbury University has shown that partially oxidised metals may in fact be a better choice, at least to zinc oxide. This thesis describes the development of a fabrication process for metal-semiconductor field effect transistors using a silver oxide gate on epitaxially grown zinc oxide single crystals. Devices were successfully produced and electrically characterised. The measurements show that the technology has significant potential.
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2

Ho, Wai. "GaAs MESFET modeling and its applications." Ohio : Ohio University, 1993. http://www.ohiolink.edu/etd/view.cgi?ohiou1175707072.

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3

Tang, Wing Ho Aaron. "Optimum MESFET frequency multiplier design." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239221.

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4

Eddini, Abdel-ilah. "Étude et extraction des paramètres de bruit dans un transistor Mesfet." Sherbrooke : Université de Sherbrooke, 2001.

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5

Langlois, Pierre L. "Développement d'un procédé de fabrication de transistors en technologie MESFET." Sherbrooke : Université de Sherbrooke, 2004.

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6

Abbott, Derek. "GaAs MESFET Photodetectors for imaging arrays /." Title page, contents and abstract only, 1995. http://web4.library.adelaide.edu.au/theses/09PH/09pha1312.pdf.

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7

Khalaf, Yaser A. "Systematic Optimization Technique for MESFET Modeling." Diss., Virginia Tech, 2000. http://hdl.handle.net/10919/28515.

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Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are used for robust designs and fabrication development. The sophistication of modern communication systems urged the need of monolithic microwave integrated circuits (MMICs), which consists of many MESFETs on the same chip. As the chip density increases, the need of accurate MESFET models becomes more pronounced. In this study, a new technique has been developed to extract a 15-element small signal model of MESFET devices. This technique implies the use of three sets of S-parameter measurements at different bias conditions. The technique consists of two major steps; in the first step, some of the bias-independent extrinsic parameters are estimated in preparation for the second step. In the second step, all other parameters should be extracted at the bias point of interest. This technique shows reliable results. Unlike other optimization techniques, our proposed technique shows insensitivity to the unavoidable measurement errors over any frequency range. It shows a unique solution for all parameter values. This technique has been tested on S-parameters of a hypothetical device model and compared with other optimization-based extraction techniques. Moreover, it has been also applied to GaAsTEK 0.8x300 μm2 MESFETs to extract the model parameters at different bias voltages. The study reveals accurate and consistent results among the similar devices on the same wafer. Some thermal characteristics of the small-signal parameters are discussed. The parameters are extracted from measurements at three temperatures for two similar devices on the same wafer. The thermal results of the two devices demonstrate consistent results, which assure the preciseness, and robustness of our proposed technique. In addition, the relation between the small-signal model parameters and the large signal model parameters is also presented. The parameters of an empirical model for the drain-source current are extracted from the dc measurements along with the small-signal transconductance and output conductance. The large-signal model results for a GaAsTEK 0.8x300 μm2 MESFET are introduced.
Ph. D.
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8

Altay, Mirkan. "Comparison And Evaluation Of Various Mesfet Models." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12605987/index.pdf.

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There exist various models for Microwave MESFET equivalent circuit representations. These models use different mathematical models to describe the same MESFET and give similar results. However, there are some differences in the results when compared to the experimental measurements. In this thesis, various theoretical models are applied to the same MESFET and comparison made with measured data. It is shown that some models worked better on some parameters of the MESFET, while the others were more effective on other parameters. Altogether eight models were examined and data optimized to fit these theoretical models. In using optimization algorithms MATLAB FMINSEARCH and GENETIC ALGORITHM CODE were used alternatively to solve the initial value problem.
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9

Weissfloch, Phillip. "Iron-GaAs schottky contact for mesfet applications." Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=61798.

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10

Elgaid, Khaled Ibrahim. "A Ka-Band GaAs MESFET monolithic downconverter." Thesis, University of Glasgow, 1998. http://theses.gla.ac.uk/1730/.

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The objective of the work of this thesis is to design, fabricate, and characterise a GaAs MESFET based monolithic microwave integrated circuit (MMIC) downconverter which operates at Ka-band frequency (35GHz). In the course of the project active and passive elements required for the MMIC were designed, fabricated, characterised and their equivalent circuit models extracted. Fabrication processes for passives, actives and MMIC were realised using mainly electron beam lithography (EBL) techniques. The main findings of this thesis were: Devices - Influence of gate recess offset on MESFETs The MESFETs were patterned by EBL and gate recessing was accomplished by selective dry etching. The influence of the gate recess offset on the small signal AC equivalent circuit, DC device characteristics, overall high frequency device performance, and low frequency noise behaviour of 0.2 m gate length GaAs MESFETs implemented in the low noise amplifier (LNA) circuit design in this thesis was investigated. Numerical simulations of the AC small signal equivalent circuit dependence were carried out in order to help understand the effects observed. Good qualitative agreement between measured and simulated response was obtained. - Schottky diodes The performance of Schottky-contact diodes used in the MMIC mixer were studied as a function of their geometry and processing conditions. Passives - CPW losses Losses in coplanar interconnect topologies (coplanar waveguide and slotline) using different metallisation processes were investigated. - CPW to slotline transitions A range of coplanar waveguide to slotline transitions required for the MMIC mixer were studied. Broadband performance with insertion loss of < 0.5dB per transition was observed. Transmission line models of the structures have been implemented to enable circuit performance to be predicted and designed to suit the application frequency. The effect of parasitic modes on transitions performance was also investigated.
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11

Al-Najafi, Ibrahim. "A study of intermodulation in MESFET mixers." Thesis, Cranfield University, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333134.

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12

Franklin, Andrew John. "Electrical overstress failure in GaAs MESFET structures." Thesis, Loughborough University, 1990. https://dspace.lboro.ac.uk/2134/11006.

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An experimental and theoretical analysis has been carried out into the effects of electrostatic discharge and constant power electrical overstress in GaAs MES structures. An experimental system has been set up to measure the electrical and physical characteristics of such devices when subject to electrical overstress. This system includes computer controlled equipment to analyse the electrical failure waveforms. The results from the experimental study have been analysed to establish any patterns which characterise ESD breakdown. Using a new thermal breakdown model, analytical predictions of the power required to degrade these devices, for both constant power, and electrostatic discharge breakdown, have been carried out.
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13

Frenzel, Heiko. "ZnO-based metal-semiconductor field-effect transistors." Doctoral thesis, Universitätsbibliothek Leipzig, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-61957.

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Die vorliegende Arbeit befasst sich mit der Entwicklung, Herstellung und Untersuchung von ZnO-basierten Feldeffekttransistoren (FET). Dabei werden im ersten Teil Eigenschaften von ein- und mehrschichtigen Isolatoren mit hohen Dielektrizitätskonstanten betrachtet, die mittels gepulster Laserabscheidung (PLD) dargestellt wurden. Die elektrischen und kapazitiven Eigenschaften dieser Isolatoren innerhalb von Metall-Isolator-Metall (MIM) bzw. Metall-Isolator-Halbleiter (MIS) Übergängen wurden untersucht. Letzterer wurde schließlich als Gate-Struktur in Metall-Isolator-Halbleiter-FET (MISFET) mit unten (backgate) bzw. oben liegendem Gate (topgate) genutzt. Der zweite Teil konzentriert sich auf Metal-Halbleiter-FET (MESFET), die einen Schottky-Kontakt alsGate nutzen. Dieser wurde mittels reaktiver Kathodenzerstäubung (Sputtern) von Ag, Pt, Pd oder Au unter Einflußvon Sauerstoff hergestellt. ZnO-MESFET stellen eine vielversprechende Alternative zu den bisher in der Oxid-basierten Elektronik verwendeten MISFET dar. Durch die Variation des verwendeten Gate-Metalls, Dotierung, Dicke und Struktur des Kanals und Kontakstruktur, wurde ein Herstellungsstandard gefunden, der zu weiteren Untersuchungen herangezogen wurde. So wurde die Degradation der MESFET unter Belastung durch dauerhaft angelegte Spannung, Einfluss von Licht und erhöhten Temperaturen sowie lange Lagerung getestet. Weiterhin wurden ZnO-MESFET auf industriell genutztem Glasssubstrat hergestellt und untersucht, um die Möglichkeit einer großflächigen Anwendung in Anzeigeelementen aufzuzeigen. Einfache integrierte Schaltungen, wie Inverter und ein NOR-Gatter, wurden realisiert. Dazu wurden Inverter mit sogenannten Pegelschiebern verwendet, welche die Ausgangsspannung des Inverters so verschieben, dass eine logische Aneinanderreihungvon Invertern möglich wird. Schließlich wurden volltransparente MESFET und Inverter, basierend auf neuartigen transparenten gleichrichtenden Kontakten demonstriert.
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14

Allen, Richard M. "Investigation and modelling of dual gate MESFET mixers." Thesis, Leeds Beckett University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.282776.

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This thesis deals with some of the theoretical and practical aspects relating to the conversion gain and noise performance of mixers employing dual-gate field effect transistors (DGFET'S) . To start with, the role of mixers in the context of radio conununication receivers is highlighted and the most relevant mixer properties are explained. Solid state mixing devices and their circuits are then discussed with special emphasis on the DGFET.This includes a survey and explanation of mixing devices ,planar transmission lines and circuit components for the practical design of mixers. Chapter 3 then deals with the mixer signal analysis as well as accuracy considerations. A more detailed treatment of the DGFET in terms of structure and dc model is given in the subsequent chapter. Problems associated with the choice of an FET model are referred to as well as the use of MATLAB for computationa: purposes. This is followed in the next two chapters with the development and analysis of the large signal equivalent circuit of tr.{· DGFET,and a treatment of noise and its measurement as associated with mixers. The design, practical implementation and measurement of the properties of DGFET mixers is covered in chapter 7. This is followed in Chapter 8 by an overall discussion of results, possible future work and conclusions. A new FET model is proposed that enables the dc characteristics to be simulated more closely than in previous models, particularly at low drain voltages. Furthermore, the representation of the noise by a frequency independent drain current generator and an input noise conductance enabled a single set of measurements to simulate the noise behaviour of the device as an amplifier or a mixer. Practical investigations using an NEe device type NE 41137 gave a maximum stable conversion gain in the frequency range O.SGHz to 3.0GHz of 4dB with a minimum noise figure 8.SdB.
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15

Webster, Danny Richard. "Developing low distortion linear and nonlinear circuits with GaAs FETs using the Parker Skellern model." Thesis, University College London (University of London), 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.243599.

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16

Radice, Richard A. "Single-event analysis of LT GaAs MESFET integrated circuits." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1997. http://handle.dtic.mil/100.2/ADA336778.

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17

Choo, Boy Lee. "Microwave GaAs MESFET circuit design using time-domain simulation." Thesis, Queen's University Belfast, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356890.

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18

Davies, Antony. "Characterisation and parameter extraction techniques for GaAs MESFET devices." Thesis, University of Kent, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241552.

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19

Ahmad, Imad Saleh. "Analysis of Intermodulation Distortion for MESFET Small-signal Amplifiers." PDXScholar, 1995. https://pdxscholar.library.pdx.edu/open_access_etds/4989.

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Using the nonlinear Volterra series representation, analytical expressions for the third-order intermodulation distortion power and intercept point for a MESFET small-signal amplifier are derived when its equivalent circuit is bilateral and includes the gate-to-drain capacitance (CgJ explicitly as a nonlinear element. Previously developed analytical expressions treated Cgd as a linear element or incorporated it as part of gate-to-source and drainto- source capacitances (Cgs and Cds). These new analytical expressions are then compared with experimental data and good agreement is obtained. The analytical expressions are also used to study the variation of intermodulation distortion with input power, frequency, and source and load impedances. It is shown that the nonlinearity of Cgd contributes significantly to the intermodulation distortion power and the third-order intercept point and therefore should not be neglected in the analysis and design.
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20

McDowall, David Stewart. "Concurrent mixed mode modelling of active strip antennas." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239014.

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21

Griffiths, Timothy Giles d'Arcy. "Magneto-transport properties of GaAs microstructures near the metal-insular transition." Thesis, University of Exeter, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388627.

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22

Chun, Carl S. P. (Shun Ping). "Investigation of GaAs MESFET amplifier topologies for optoelectronic receiver applications." Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/14813.

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23

Vogt, Rolf Walter Eduard. "Schnelle gemischt digital/analoge Transversalfilter in Gallium-Arsenid-MESFET-Technologie /." [S.l.] : [s.n.], 1996. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=11755.

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24

Boumaza, Touraya. "Caractérisation d'un mesfet à grille fendue pour la détection optique." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb376033180.

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25

Chueiri, Ivan Jorge. "Uma contribuição ao projeto de CI's com MESFET em GaAs." [s.n.], 1993. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261441.

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Orientador : Jacobus Wilibrordus Swart
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica
Made available in DSpace on 2018-07-18T10:05:20Z (GMT). No. of bitstreams: 1 Chueiri_IvanJorge_M.pdf: 14720870 bytes, checksum: 618b71ab7ca41e4aae5585876627dec7 (MD5) Previous issue date: 1993
Resumo: Este trabalho visa criar um elo entre processos e projetos de Circuitos Integrados e Dispositivos no Laboratório de Pesquisa e Dispositivos. Na área referente a processos, o Laboratório de Pesquisa e Dispositivos vem desenvolvendo a técnica de "Difusão de Enxofre em Arseneto de Gálio por Processamento Térmico Rápido" e obtendo dispositivos básicos. Dessa forma a partir deste trabalho foram extraidos os parâmetros Spice dos dispositivos em Arseneto de Gálio que vem sendo processados tanto desenvolvemos no Laboratório 39 do LPD. Para um programa de extração (Statz de parâmetros para o modelo de Raytheon et aI.) , utilizado em SPICE3D2 (UCBerkeley). Obtivemos ajustes das curvas caracteristicas experimentais e de modelo com erro menor que 4%. Juntamente com estes parâmetros foram escritos arquivos de tecnologia, que são regras de projetos para o desenho de novos circuitos. Foi desenvolvido um "chipteste" contendo dispositivos e circuitos, com finalidade de se extrair parâmetros e testar a performance de cada um dos circuitos
Abstract: The intent of the thesis. "A Contribution to Integrated Circuit Projects With GaAs MESFET", is to obtain a relationship between the Research on Devices laboratory (lPD) GaAs process and the integrated circuits develop using this process. The LPD develops integrated circuits using the "Rapid Thermal Diffusion of Sulphur in GaAs". The SPICE parameters of the GaAs devices (depletion transistors), made using this process, was extracted. A computer program was developed, that takes as input the carachteristics' curves of a device and gives as output the SPICE parameters according to the Raytheon Model (Statz et aI.). This model is used in the SPICE3-D2 (and upgraded version) developed by UC-Berkeley. We have obtained the experimental characteristics' curves fit with that of the medel with an errer les5 than 4%. We have, also written the technology file/design rules for MAGIC-6.3, for the LPD diffusion process. Using MAGIC we have developed a test chip ("chipteste") with devices and circuits. These devices will be used to extract parameters that will contribute to the fine tuning of the model and the LPD process
Mestrado
Mestre em Engenharia Elétrica
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26

Boumaza, Touraya. "Caractérisation d'un MESFET à grille fendue pour la détection optique." Paris 11, 1987. http://www.theses.fr/1987PA112033.

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Cette thèse présente la caractérisation d'un MESFET en Arséniure de Gallium pour la détection optique. Après avoir rappelé brièvement les propriétés du matériau, on présente le principe de fonctionnement du transistor à effet de champ, ainsi que l'influence de la lumière sur le MESFET. La structure étudiée est originale : c'est un MESFET dont la grille est interrompue sur une distance submicronique. Sa caractérisation en obscurité a permis de déterminer les valeurs des différents paramètres du transistor, tels que l'épaisseur de la couche active, et la valeur des résistances d'accès. Pour cela, on compare les caractéristiques d'obscurité expérimentales avec les caractéristiques théoriques, obtenues à partir d'un calcul prenant en compte l'extension latérale de la zone de charge d'espace sous la fente de la grille, ainsi que l'existence du potentiel de surface. Sa comparaison permet d'ajuster les divers paramètres du MESFET. On décrit un montage optique permettant de faire une tache lumineuse de diamètre de l'ordre du micron,destinée à n'éclairer que la région où la grille est interrompue. Ceci a permis d'observer l'influence de la largeur de la fente de la grille sur la sensibilité sensibilité et le gain du phototransistor en régime d'éclairement quasi permanent par un laser Hélium-Néon. Le même montage optique est utilisé pour étudier la réponse temporelle du phototransistor, à l'aide d'un laser à colorant (Rhodamine 6G) délivrant des impulsions picosecondes. Les temps de montée et de descente du signal observé sont respectivement inférieurs à 100 et 300 ps.
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27

Wong, J. N. H. "Novel techniques for improving the performance of MESFET power amplifiers." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843448/.

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This thesis describes the research activities that have been investigated for improving the 3rd order intermodulation distortion products (IM3) and power added efficiency (PAE) and bandwidth performance of microwave GaAs MESFET power amplifiers. Two novel circuit techniques, one for improving the 3dB bandwidth performance and the other for improving the IM3 and PAE performance, were proposed and verified through simulation and practical measurements. The technique of including lumped elements matching networks within the package encapsulation (Close-to-Chip lumped element matching) of a 2GHz MESFET device is described for the first time. Simulation results showed that the amplifier using this technique had a 3dB bandwidth 3 times wider than the amplifier with Off-Chip distributed element matching. The linearity and efficiency performance of a 2GHz MESFET was improved significantly by presenting a difference frequency shunt short-circuit termination across the drain terminal. A 16dB reduction in IM3 and an improvement of 4% in PAE performance was measured on the bench. Success with this technique was further demonstrated with digitally modulated signals.
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28

Langlois, Pierre L. "Développement d'un procédé de fabrication de transistors en technologie MESFET." Mémoire, Université de Sherbrooke, 2004. http://savoirs.usherbrooke.ca/handle/11143/1232.

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Ce mémoire de maîtrise en génie électrique fait état de travaux de recherche appliquée en micro-électronique et plus spécifiquement du développement d'un procédé de fabrication de transistors à hautes fréquences réalisés dans des installations universitaires, afin d'y permettre éventuellement la réalisation de circuits intégrés millimétriques et micro-ondes (MMIC) plus complexes à partir de ces composants actifs de base. Après plusieurs ajustements des procédés de fabrication, des prototypes de transistors MESFET aux caractéristiques DC représentatives de cette technologie ont été fabriqués. Par contre, les tests en hautes fréquences indiquent des fréquences de coupures et un gain trop faibles pour ces dispositifs. Néanmoins, ces premiers prototypes serviront de point de départ pour une optimisation géométrique et physique de ces transistors MESFET. De plus, le développement de nouvelles méthodes connexes et l'expérience acquise lors du développement de procédé facilitera l'étape ultérieure entreprise dans ce domaine de recherche soit le développement du procédé pour transistors HEMT.
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Lau, Mark C. "Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device." Thesis, Virginia Tech, 1997. http://hdl.handle.net/10919/36952.

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The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. The approach taken in this thesis is to use measured S- parameters to extract a small signal equivalent circuit model by optimization. Small signal models and S-parameters are explained. The Simplex Method is used to optimize the small signal equivalent circuit model. A thorough analysis of the strengths and weaknesses of the Simplex method is performed.
Master of Science
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30

Baree, Atiqui Haque. "Analysis and design of GaAs monolithic microwave and mm-wave mixers." Thesis, King's College London (University of London), 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267802.

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31

Botterill, Iain Andrew. "The performance of conventional and dual-fed distributed amplifiers, and the use of the heterojunction bipolar transistor in such structures." Thesis, Brunel University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307536.

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32

Law, Choi Look. "Analysis of MESFET distributed amplifiers operating in linear and nonlinear mode." Thesis, King's College London (University of London), 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.284545.

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33

Eddini, Abdel-ilah. "Étude et extraction des paramètres de bruit dans un transistor Mesfet." Mémoire, Université de Sherbrooke, 2001. http://savoirs.usherbrooke.ca/handle/11143/1084.

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Le présent mémoire est réalisé pour refléter, le mieux possible, tous les aspects physiques, électroniques, et technologiques d’une structure MESFET, et leurs impact sur le comportement du bruit dans ce genre de transistor. Le chapitre 1 dresse un rappel sur la définition d’un transistor MESFET, les caractéristiques et les propriétés de telles structures et des matériaux utilisés, et enfin, les procédés technologiques de fabrication. Le chapitre 2 est consacré entièrement au phénomène de bruit dans les circuits MESFET; il comprend en particulier la partie d’analyse théorique qui sera utilisée dans le chapitre 4 pour l’extraction des paramètres de bruit. Un rappel des modèles physiques et numériques de circuits MESFET les plus utilisés par les programmes CAO est présenté à travers le chapitre 3. Toute la partie réalisation des travaux sujets de ce mémoire est résumée dans le chapitre 4 qui présente en particulier la méthode utilisée pour l’extraction des paramètres de bruit, et l’utilisation de cette dernière pour une étude paramétrique afin de bien comprendre leur influence sur le comportement du bruit.
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34

Olbers, Robert L. "A physical-based nonlinear model for the GaAs MESFET with parameter optimization." Ohio : Ohio University, 1991. http://www.ohiolink.edu/etd/view.cgi?ohiou1183735375.

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35

Shearing, P. R. "A coplanar Ka band balanced common gate amplifier in gallium arsenide MESFET." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/MQ44920.pdf.

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36

Hudson, Benjamin Lenward. "Gallium arsenide MESFET operational amplifier to be used in composite operational amplifier design." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1993. http://handle.dtic.mil/100.2/ADA277843.

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Thesis (M.S. in Electrical Engineering) Naval Postgraduate School, December 1993.
Thesis advisor(s): Sherif Michael ; Douglas Fouts. "December 1993." Includes bibliographical references. Also available online.
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Chu, Eric. "Characterisation & optimisation of computational functional blocks for ATM switches GaAs MESFET technology /." Title page, contents and abstract only, 1994. http://web4.library.adelaide.edu.au/theses/09ENS/09ensc559.pdf.

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38

Rousseau, Bruno. "Contribution à l'élaboration d'une Gate-Array en technologie AsGa, MESFET et logique DCFL." Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb37600867v.

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39

Rémy, Pascal. "Outils de verification pour circuits vlsi asga mesfet par des methodes d'abstraction fonctionnelle." Paris 6, 1997. http://www.theses.fr/1997PA066527.

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Dans le cadre de cette these, un environnement de verification pour la circuiterie asga mesfet a ete developpe. Il s'appuie sur une representation en etages orientes du circuit obtenue par abstraction fonctionnelle a partir de sa representation en transistors. La construction de cette representation fait appel a des methodes purement algorithmiques ainsi qu'a des methodes basees sur la reconnaissance de formes. Cette representation constitue le point de depart pour les outils de verification developpes dans le cadre de la these. Les verifications sont d'ordre electrique, fonctionnelle et temporelle. A la difference de la circuiterie cmos, la circuiterie asga mesfet est tres sensible aux erreurs de dimensionnement des transistors qui peuvent compromettre la fonctionnalite. L'outil pour la verification electrique signale automatiquement les violations de regles electriques parmi un ensemble preetabli. Il est parametrable et evolutif. L'outil pour la verification fonctionnelle fournit le modele vhdl a partir de la net-list en transistors extraite du dessin des masques. Enfin, l'outil pour la verification temporelle definit des modeles temporels pour chaque etage oriente. Le chemin critique et les temps de propagation du circuit sont obtenus a partir de ces modeles. Cet environnement a ete a la base de la validation des circuits asga mesfet concus au laboratoire masi au cours de ces dernieres annees. Les experiences realisees sur des circuits de taille variable demontrent la complexite lineaire des algorithmes mis en uvre. Le bilan montre que la methode proposee permet de traiter des circuits varies et de complexite significative.
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40

Rousseau, Bruno. "Contribution à l'élaboration d'une Gate-Array en technologie ASGA, MESFET et logique DCFL." Paris 11, 1986. http://www.theses.fr/1986PA112249.

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L'élaboration d'une Gate-Array en arséniure de gallium, utilisant des dispositifs MESFET et appliquée à une logique DCFL, permet de cerner et d'aborder l'ensemble des problèmes liés à un tel travail. Cette conception peut être subdivisée en dix grandes étapes. Tout d'abord, une étude générale sur l'AsGa (1) qui aboutira à une étude d'une technologie appropriée (2). Puis viendra l'étude d'un modèle adapté aux simulations à effectuer (3). Il faudra ensuite définir une logique liée aux applications envisagées (4). On pourra ensuite optimaliser la logique retenue (5). Une étude des éléments parasites permettra d'en déterminer l'influence sur le comportement des circuits (6). Il sera alors temps d'aborder l'élaboration proprement dite de la gate-array en définissant ses principaux aspects (7) et en concevant complètement la plupart de ses éléments constitutifs (8).
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41

Hjelm, Mats. "Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3700.

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The importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. A wide range of simulation methods exists, andthe method used in each case is selected according to therequirements of the work performed. For simulations of newsemiconductor materials, extremely small devices, or deviceswhere non-equilibrium transport is important, the Monte Carlo(MC) method is advantageous, since it can directly exploit themodels of the important physical processes in the device.

One of the semiconductors that have attracted a lot ofattraction during the last decade is silicon carbide (SiC),which exists in a large number of polytypes, among which3C-SiC, 4H-SiC and 6H-SiC are most important. Although SiC hasbeen known for a very long time, it may be considered as a newmaterial due to the relatively small knowledge of the materialproperties. This dissertation is based on a number of MCstudies of both the intrinsic properties of different SiCpolytypes and the qualities of devices fabricated by thesepolytypes. In order to perform these studies a new full-bandensemble device MC simulator, the General Monte CarloSemiconductor (GEMS) simulator was developed. Algorithmsimplemented in the GEMS simulator, necessary when allmaterial-dependent data are numerical, and for the efficientsimulation of a large number of charge carriers in high-dopedareas, are also presented. In addition to the purely MC-relatedstudies, a comparison is made between the MC, drift-diffusion,and energy-balance methods for simulation of verticalMESFETs.

The bulk transport properties of electrons in 2H-, 3C-, 4H-and 6H-SiC are studied. For high electric fields the driftvelocity, and carrier mean energy are presented as functions ofthe field. For 4H-SiC impact-ionization coefficients,calculated with a detailed quantum-mechanical model ofband-to-band tunneling, are presented. Additionally, a study oflow-field mobility in 4H-SiC is presented, where the importanceof considering the neutral impurity scattering, also at roomtemperature, is pointed out.

The properties of 4H- and 6H-SiC when used in short-channelMOSFETs, assuming a high quality semiconductor-insulatorinterface, are investigated using a simple model for scatteringin the semiconductor-insulator interface. Furthermore, theeffect is studied on the low and high-field surface mobility,of the steps formed by the common off-axis-normal cutting ofthe 4H- and 6H-SiC crystals. In this study an extension of theprevious-mentioned simple model is used.

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42

Kandasamy, Sasikaran, and s3003480@student rmit edu au. "Investigation of SiC Based Field Effect Sensors with Gas Sensitive Metal Oxide Layers for Hydrogen and Hydrocarbon Gas Sensing at High Temperatures." RMIT University. Electrical and Computer Engineering, 2008. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080724.142015.

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This PhD thesis sets out to investigate novel Silicon Carbide (SiC) based field effect devices (Schottky and transistor structures), with gas sensitive layers for monitoring hydrogen and propene gases at high temperatures. The devices developed by the author were shown to exhibit sensitivities at least 1~2 orders of magnitude (voltage shift, ƒ¢V) higher than those reported in literature. Not only did the author seek to investigate the gas sensing potential of such devices, but also he set out to study, analyse and establish the gas interaction mechanism of these novel sensors. High temperature tolerant hydrogen and hydrocarbon sensors are required in numerous applications such as: aerospace, nuclear power plant, space exploration and exhaust monitoring in automobiles. Monitoring these gases in a reliable and efficient manner is of great value in these applications, not only from a safety point of view but also for economical reasons. Hence there is an absolute necessity for simple, efficient and high performance sensors not only for monitoring and leak detection but also to function as part of a safety device to prevent accidents. The proposed sensor structure of combining SiC with gas sensitive oxide layers allow them to be operated at high temperatures, making them extremely appealing for direct or in-situ monitoring applications. The microstructural analysis performed using Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering Spectroscopy (RBS) provides no evidence of inter-diffusion between different layers, in spite of the sensors being annealing at 650‹ in O2, H2 and C3H6 atmospheres for approximately 50hrs. Samples in different conditions (as deposited, annealed and tested) were compared. The electrical properties of the MROSiC (current-voltage, I-V and capacitance-voltage, C-V characteristics) and MESFET (drain current-source drain voltage (ID-VSD) and transfer, (ãID-H2 concentration) characteristics) devices were measured in the presence and absence of H2 and C3H6. Several parameters such as barrier height, saturation currents, pinch-off voltages and channel conductance were determined from the electrical characteristics, and their influence on the device performance was studied. The authorfs proposed gas interaction model based on energy band diagram is well supported by the experimental data obtained.
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43

Van, Dyk Steven E. "Single event upsets and noise margin enhancement of gallium arsenide Pseudo-Complimentary MESFET Logic." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1995. http://handle.dtic.mil/100.2/ADA303057.

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44

Lujan, Guilherme Sansigolo. "Filmes finos de WN e ALN e suas aplicações na fabricação de transitores mesfet." [s.n.], 2000. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259742.

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Orientador: Peter Jurgen Tatsch
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
Made available in DSpace on 2018-07-26T20:42:26Z (GMT). No. of bitstreams: 1 Lujan_GuilhermeSansigolo_M.pdf: 5462172 bytes, checksum: 09721e74042e0485f807f7ac21a8ad3d (MD5) Previous issue date: 2000
Resumo: Neste trabalho são caracterizados filmes finos de WN e AlN obtidos por sputtering DC em ambiente de Nitrogênio. Diodos Schottky sobre GaAs são utilizados para caracterizar os filmes de WN. Os diodos são submetidos a tratamentos térmicos visando o estudo da estabilidade térmica dos contatos, ensaiando a fabricação dos transistores MESFET. A caracterização dos diodos é baseada em medidas I-V para a obtenção do fator de idealidade e da altura de barreira Schottky. Os dispositivos estáveis termicamente apresentaram valores de 1,3 e 0,55 eV respectivamente. Os diodos ainda foram submetidos a passivação por plasma. Os filmes de AlN foram caracterizados a partir de capacitores MIS, obtendo-se a constante dielétrica e a densidade de cargas do filme, de 8,7 e 0,9xl011cm-2 respectivamente. Os Fihnes de AlN também foram usados satisfatoriamente como capa para implantação iônica e recozimento, que também é uma etapa de processamento de transistores MESFET
Abstract: Tungsten Nitride (WN) and Aluminum Nitride (AlN) thin films were deposited by DC sputtering in Nitrogen ambi~nt and characterized in this work. Gallium Arsenide Schottky diodes were used in the characterization of WN films. The diodes were subject to thermal treatments to study the thermal stability of the contacts, as in the fabrication process of MESFET transistors. The diodes characterizations were based in I-V measurements to obtain the ideality factor(n) and the Schottky barrier height(?b). The thermally stable devices show n=1.3 and { ?b =O.55eV respectively. The diodes were also submitted to a plasma passivation processo The AlN thin films were characterized using MIS capacitors and the dielectric constant and effective charge density obtained were 8.7 and O.9x1011 cm-2 respectively. The AlN films were used satisfactory as a cap layer to íon implantation and annealing, which is a process step of MESFET transístors
Mestrado
Mestre em Engenharia Elétrica
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45

Kako, Maria Margaret. "Amplificador faixa larga com mesfet de GaAS para sistemas de até 1,5 Gbit/s." Instituto Tecnológico de Aeronáutica, 1989. http://www.bd.bibl.ita.br/tde_busca/arquivo.php?codArquivo=1871.

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Neste trabalho foi implementado um amplificadorpara pequenos sinais e ambiente de 50 com largaura de faixa de 500 KHz a 1,5 GHz (11,5 oitavas) , baseando se em técnicas de circuitos discretos. Utilizando 2 MESFET';s de GaAs, redes de polarizaçãoindutivas e reais de casamento sem perdas o amplificador construído apresentou um gano médio se 27,5 dB com `ripple';de 1,5 dB e uma figura de ruídomenor que 2 dB para freqüência acima de 500 MHz e menor que 3 dBpara freqüências acima de 50 MHz. Os resultados experimentais obtidos demonstram a validade de procedimento utilizado para o projeto sendo conseguido um excelente desempenho em termos de ganho, largura de faixa e figura de ruído.
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46

Gautier, Jean-Luc. "Contribution à la modélisation microonde des transistors à effet de champ sur Arséniure de Gallium soumis à un flux lumineux : application aux dispositifs commandés optiquement." Paris 11, 1987. http://www.theses.fr/1987PA112028.

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L'utilisation d'une méthode d'optimisation pour déterminer les éléments du modèle électrique linéaire équivalent du transistor à effet de champ sur arséniure de gallium (MESFET) est présentée dans ce mémoire. La sensibilité et la précision de cette méthode sont analysées, une méthode de préoptimisation est alors proposée permettant d'améliorer la précision des résultats. Un banc de caractérisation électrique statique et dynamique piloté par calculateur a été mis au point. Les points importants de cette étude sont la réalisation d'un traceur de caractéristiques statiques performant et l'étude des méthodes d'élimination de l'environnement de mesure microonde du composant. Les variations des éléments du modèle électrique équivalent en fonction de la puissance lumineuse sont présentées, elles montrent que seul un petit nombre d'entre eux subissent une variation significative. La possibilité de commande de la fréquence d'un oscillateur par un flux lumineux est montrée théoriquement et vérifiée expérimentalement. L'étude et la réalisation de deux amplificateurs à bande étroite permettent de mettre en évidence la commande du gain par la lumière avec une dynamique pouvant atteindre 20 dB. Une méthode graphique permettant la détermination de l'impédance de contre-réaction d'un amplificateur à gain plat sur une large bande de fréquence est présentée. Cette méthode a été utilisée pour étudier un amplificateur à gain plat adapté à l'entrée et à la sortie entre 4 et 8 GHz. Un certain nombre d'applications potentielles sont également présentées ainsi qu'une structure de transistor à grille inversée permettant d'augmenter l'influence des effets photoélectriques
The use of an optimization method for the determination of equivalent linear electrical model elements of gallium arsenide field effect transistor (MESFET) is presented. Sensibility and accuracy of this method are analysed, a preoptimization method is proposed for the amelioration of the results accuracy. A computer driven static and dynamic electrical measurement set has been developped. The main features are the realization of an efficient static characteristic plotter and an investigation of the microwave de-embedding of the component. The equivalent electrical model element variations with regard to the incident power light are presented, only a few of them have a significant variation. The optical frequency control of oscillator is theoretically shown and experimentally verified. The design and the realization of two narrow-band amplifiers emphasizes the light control gain. A graphical method for the feed-back impedance determination of flat gain amplifier over a wide frequency range is presented. This method is used to design an input-output matched flat gain amplifier between 4 and 8 GHz. Other potential applications are also presented and in addition an inversed grid transistor which permits to increase photoelectric effects
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47

Moughabghab, Raëd. "Conception de filtres continus GaAs haute précision, faible consommation en vue de leur application dans un système de communication mobile." Lille 1, 1997. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/1997/50376-1997-63.pdf.

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Les systèmes de communication mobile radiofréquence (rf) utilisent actuellement, pour leur besoin en filtrage, des filtres à ondes de surface, places à l'extérieur des circuits intégrés. Ces filtres non intégrés entrainent des pertes d'insertion, occasionnées par l'interconnexion entre le filtre externe et le circuit intégré, et un encombrement conséquent lie au boitier encapsulant le filtre. Ces inconvénients ont conduit à la recherche de méthodes de conception de fonctions de filtrage intégrées adaptées aux fréquences rf. Afin d'obtenir de bonnes performances à ces fréquences, une technologie mesfet GaAs digitale est choisie, ayant des transistors nmesfet depletes et enrichis de 25 GHz de fréquence de transition. L'approche proposée est basée sur le filtrage continu transconductance-capacité. Elle permet de résoudre des problèmes d'asservissement en fréquence, en mode commun, en phase et en gain dc. Ainsi, une nouvelle technique utilisant le principe des résistances négatives, est introduite pour résoudre le problème de la valeur élevée des conductances de sortie des transistors mesfet. Ceci permet d'améliorer le gain dc de la transconductance utilisée dans le système de filtrage. Différents filtres sont implémentés et mesures a des tensions d'alimentation de 1. 9 v: a) un filtre passe-bas du 1er ordre ayant une plage d'accord s'étendant de 500 mhz à 2. 2 GHz, et présentant une erreur de gain de l'ordre de 0. 25% ; b) un filtre passe-bande du 2nd ordre de 1. 1 GHz de fréquence centrale, présentant une plage d'accord de plus de 0. 5 GHz, et ayant un facteur de qualité réglable entre 0. 65 et 1. 3 ; c) un filtre passe-bas elliptique du troisième ordre d'une fréquence de coupure de 220 mhz. Une application du filtre passe-bande propose à un système de communication mobile permet d'en évaluer les performances pour des fréquences situées autour de 1 GHz. Un facteur de bruit de l'ordre de 5. 5 dB est prévu par les simulations.
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48

Godts, Pascale. "Modélisation et optimisation en vue de réalisations technologiques de Mesfet et de Tegfet AlGaAs/GaAs." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37613965c.

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49

Crampton, Raymond J. "A nonlinear statistical MESFET model using low order statistics of equivalent circuit model parameter sets." Thesis, This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-03032009-040420/.

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50

Chusseau, Laurent. "Contribution à la conception de circuits intégrés AsGa : modélisation du MESFET AsGa et étude des effets de propagation et de couplage dans les CI logiques BFL AsGa : caractérisation en bruit des transistors hyperfréquence faible bruit AsGa." Paris 11, 1986. http://www.theses.fr/1986PA112024.

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Cette Thèse présente deux contributions à la conception de circuits intégrés AsGa. A/ L'étude des effets de propagation et de couplage dans les circuits logiques AsGa BFL sur un nouveau macrosimulateur temporel MACPRO. Ce travail comporte la mise au point d'un modèle de MESFET adapté aux circuits logiques ultrarapides puis l'évaluation des dégradations des signaux en logique BFL dues à tous les types de lignes, signal ou alimentation, simples ou couplées (Thèse de 3ème Cycle no 3862 Université Paris-Sud Orsay). B/ La conception d'un banc de mesure automatique des paramètres de bruit des transistors hyperfréquence, comprenant la réalisation d'un adaptateur d'entrée programmable et d'une méthode numérique originale d'exploitation des mesures. Outre la validation des méthodes, ce mémoire présente les résultats obtenus pour un TEGFET à grille courte
This work presents two contributions to the CAO of GaAs Monolithic Integrated Circuits. A/ The study of the effects of propagation and coupling on GaAs BFL logic circuits with a new time simulator : MACPRO. A MESFET model adapted to high speed digital circuits was established as well as the signal degradation in BFL circuits due to signal carrying lines as well as bias lines ( Thesis n°3862, Paris-Sud University, Orsay) b/ The design of an automatic noise measurement set up for law-noise microwave GaAs transistors. A programmable input tuner was fabricated and a new method for the numerical extraction of the four noise parameters from the measurements was validated. The results obtained for a short gate length TEGFET are included
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